P-Channel Enhancement Mode Field Effect Transistor
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- Mae Kelly
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1 Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product is Pb-free (meets ROHS & Sony 259 specifications). Features V DS (V) = -30V I D = -4.0 A (V GS = -10V) R DS(ON) < 50mΩ (V GS = -10V) R DS(ON)< 65mΩ (V GS = -4.5V) R DS(ON)< 120mΩ (V GS = -2.5V) Absolute Maximum Ratings ( T A=25, unless otherwise noted ) Parameter Symbol Maximum Units Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±12 V T Continuous Drain Current NOTEA A = I D T A = A Pulsed Drain Current NOTEB I DM -25 T Power Dissipation NOTEA A = P D T A =70 1 W Junction and Storage Temperature Range T J, T STG -55 to 150 Packaging Type SOT-23 Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3401 SOT-23 Ø180mm 8mm 3000 units XX + H Halogen - free Pb - free BM : SOT-23 VER 1.1 1
2 Electrical Characteristics (T A =25 unless ) otherwise noted Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =-250μA, V GS =0V -30 V I DSS Zero Gate Voltage Drain Current V DS =-24V, V GS =0V -1 T J =55 C -5 μa I GSS Gate-Body leakage current V DS =0V, V GS =±12V ±100 na V GS(th) Gate Threshold Voltage V DS =V GS I D =-250μA V I D(ON) On state drain current V GS =-4.5V, V DS =-5V -25 A VG S =-10V, I D =-4.2A mω TJ=125 C 75 R DS(ON) Static Drain-Source On-Resistance V GS =-4.5V, I D =-4A mω V GS =-2.5V, I D =-1A mω g FS Forward Transconductance V DS =-5V, I D =-5A 7 11 S V SD Diode Forward Voltage I S =-1A,V GS =0V V I S Maximum Body-Diode Continuous Current -2.2 A I SM Pulsed Body-Diode CurrentB -30 A DYNAMIC PARAMETERS C iss Input Capacitance 954 pf V GS =0V,V DS =-15V, C oss Output Capacitance 115 pf f=1mhz C rss Reverse Transfer Capacitance 77 pf R g Gate resistance V GS =0V, V DS =0V, f=1mhz 6 Ω SWITCHING PARAMETERS Qg Total Gate Charge 9.4 nc V GS =-4.5V, V DS =-15V, Qgs Gate Source Charge 2 nc I D =-4A Qgd Gate Drain Charge 3 nc td(on) Turn-On DelayTime 6.3 μs tr Turn-On Rise Time V GS =-10V, V DS =-15V, 3.2 μs td(off) Turn-Off DelayTime R L =3.6Ω, R GEN =6Ω 38.2 μs tf Turn-Off Fall Time 12 μs trr Body Diode Reverse Recovery Time I F =-4A, di/dt=100a/μs 20.2 μs Qrr Body Diode Reverse Recovery Charge I F =-4A, di/dt=100a/μs 11.2 nc Note: A: The value of R θja is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 VER 1.1 2
3 Typical Performance Characteristics Figure 1 On-Region Characteristics Figure 2 Transfer Characteristics Figure 3 On-Resistance vs. Drain Current and Gate Voltage Figure 4 On-Resistance vs. Junction Temperature Figure 5 On-Resistance vs. Gate-Source Voltage Figure 6 Body-Diode Characteristics VER 1.1 3
4 Typical Performance Characteristics Figure 7 Gate-Charge Characteristics Figure 8 Capacitance Characteristics Figure 9 Maximum Forward Biased Figure 10 Single Pulse Power Rating Safe Operating Area (Note E) Junction-to- Ambient (Note E) Figure 11 Normalized Maximum Transient Thermal Impedance VER 1.1 4
5 Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10S R θja /W Maximum Junction-to-Ambient A Steady-State /W Maximum Junction-to-Lead C Steady-State R θjl /W Packing Information SOT-23 VER 1.1 5
6 Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ACE Technology Co., LTD. VER 1.1 6
Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2
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V NChannel MOSFET General Description Low R DS(ON) Optimized for Load Switch High Current Capability ESD Protected RoHS and HalogenFree Compliant Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS
More informationN & P-Channel 100-V (D-S) MOSFET
N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS = 4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View
AON648 V NChannel MOSFET General Description The AON648 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for boost converters
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =7V) 100% UIS Tested 100% R g Tested
AOD444 V NChannel MOSFET General Description The AOD444 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON).This device is ideal for boost converters
More informationWPM3407 WPM3407. Description. Features. Application. Order information V (BR)DSS. R DS(on) Typ V V 30 V
WPM347 Single P-Channel, Description -3 V, -4.4A,Power MOSFET The WPM347 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion
More informationAOI472 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description Features The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested
AOD9 V NChannel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos MV) technology Very Low R DS(ON) Low Gate Charge Optimized for fastswitching applications RoHS and HalogenFree Compliant
More informationUNISONIC TECHNOLOGIES CO., LTD UT4422
UNISONIC TECHNOLOGIES CO., LTD UT4422 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation
More informationSMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) Features. Absolute Maximum Ratings Ta = 25
P-Channel Enhancement Features VDS (V) =-V ID =-5.A (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.8V). -. SOT-.95 -..9 -.. -..9 -.. -..55. Unit: mm. -. +.5 G S
More informationDevice Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm
SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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NChannel Enhancement Mode Field Effect Transistor General Description The AOL44 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally
More informationTaiwan Goodark Technology Co.,Ltd TGD01P30
TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested DFN5X6 D. Top View
AON V NChannel MOSFET General Description The AON uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching
More informationRM1216. P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package marking and ordering information
RM1216 P-Channel Enhancement Mode Power MOSFET Description The RM1216 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages.this device is suitable
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