SMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF) Features. Absolute Maximum Ratings Ta = 25
|
|
- Allyson Porter
- 5 years ago
- Views:
Transcription
1 P-Channel SOT Unit: mm Features VDS (V) =-V ID =-5. A (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.V) Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish Gate. Source. Drain G D S Absolute Maximum Ratings Ta = 5 Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VDS VGS TA = 5 C ID TA = 7 C Pulsed Drain Current - Power Dissipation TA = 5 C PD.5.75 W TA = 7 C.. Thermal Resistance.Junction- to-ambient RthJA 66 Thermal Resistance.Junction- to-foot RthJF - 5 /W Junction Temperature Junction Storage Temperature Range IDM TJ Tstg - ± V A 5-55 to 5
2 Electrical Characteristics Ta = 5 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-5μA, VGS=V - V Zero Gate Voltage Drain Current IDSS VDS=-9.6V, VGS=V - ua VDS=-9.6V, VGS=V, TJ=55 - Gate-Body leakage current IGSS VDS=V, VGS=±V ± na Gate Threshold Voltage VGS(th) VDS=VGS ID=-5μA -. - V VGS=-.5V, ID=-5.A Static Drain-Source On-Resistance (Note.) P-Channel RDS(On) VGS=-.5V, ID=-.6A mω VGS=-.V, ID=-A 59 On state drain current (Note.) ID(ON) VGS=-5V, VDS=-.5V - A Forward Transconductance (Note.) gfs VDS=-5V, ID=-5.A 7 S Input Capacitance Ciss Output Capacitance Coss VGS=V, VDS=-6V, f=mhz 9 pf Reverse Transfer Capacitance Crss Total Gate Charge Qg.5 Gate Source Charge Qgs VGS=-.5V, VDS=-6V, ID=-5.A.5 nc Gate Drain Charge Qgd. Turn-On DelayTime td(on) 5 Turn-On Rise Time tr VGS=-.5V, VDS=-6V, RL=6Ω, 5 7 Turn-Off DelayTime td(off) RG=6Ω,ID=-A 7 ns Turn-Off Fall Time tf 6 9 Maximum Body-Diode Continuous Current IS - A Diode Forward Voltage VSD IS=-A,VGS=V -. V Note.:Pulse test: PW μs, duty cycle %. Marking Marking E* F
3 P-Channel 6 V GS = 5 V thru.5 V V 6 T C = - 55 C 5 C.5 V 5 C V 5 Output Characteristics Transfer Characteristics. 5 - On-Resistance (Ω) R DS(on).9.6. V GS =. V V GS =.5 V C - Capacitance (pf) 9 6 C rss C oss C iss V GS =.5 V On-Resistance vs. Drain Current Capacitance 5. V DS = 6 V I D = 5. A R DS(on) - On-Resistance (Normalized) V GS =.5 V I D = 5. A Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature
4 P-Channel.5 I S - Source Current (A) T J = 5 C T J = 5 C - On-Resistance (Ω) R DS(on) I D = A I D = 5. A V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage.. 5 On-Resistance vs. Gate-to-Source Voltage. I D = µa Variance (V) V GS(th)... Power (W) 6 T A = 5 C T J - Temperature ( C) Threshold Voltage Limited by R DS(on)*.. 6 Time (s) Single Pulse Power I DM Limited. I D(on) Limited T A = 5 C P(t) = Single Pulse P(t) = DC BVDSS Limited P(t) =. P(t) =. P(t) =. P(t) =... * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area
5 P-Channel Normalized Effective Transient Thermal Impedance.. - Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = C/W. T JM - T A = P DM Z (t) thja. Surface Mounted 5
P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2
Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68
More informationSMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) Features. Absolute Maximum Ratings Ta = 25
P-Channel Enhancement Features VDS (V) =-V ID =-5.A (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.8V). -. SOT-.95 -..9 -.. -..9 -.. -..55. Unit: mm. -. +.5 G S
More informationSMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF) Features. Absolute Maximum Ratings Ta = 25
SOT-.9 -. +.. -. +. Unit: mm Features VDS (V) = V ID =.8 A (VGS = V) RDS(ON) < 6mΩ (VGS = V) RDS(ON) < mω (VGS =.V). -. +..9 -. +..9 -. +.. -. +.... -. +. Pb Free Package May be Available. The G Suffix
More informationSMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF) Features. Absolute Maximum Ratings Ta = 25
N-Channel SI8CDS-HF (KI8CDS-HF) Features VDS (V) = V ID =.6 A (VGS = V) RDS(ON) < mω (VGS = V) RDS(ON) < mω (VGS =.V) Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish D.8 -.
More informationMOSFET SI4558DY (KI4558DY)
Features SOP- N-Channel:VDS=3V ID=A RDS(ON) < 4mΩ (VGS = V) RDS(ON) < mω (VGS = 4.5V) P-Channel:VDS=-3V ID=-A.5.5 RDS(ON) < 4mΩ (VGS =-V) RDS(ON) < 7mΩ (VGS =-4.5V). +.4 -. Source Gate 3 Source 4 Gate
More informationSMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25
SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38
More informationN-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage
N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S
More informationComplementary Trench MOSFET AO4629 (KO4629) SOP P-channel
Features N-Channel VDS (V) = 3V ID = A (VGS = V) RDS(ON) < 3mΩ (VGS = V) RDS(ON) < 4mΩ (VGS = 4.V) P-Channel VDS (V) = -3V ID = -. A (VGS = -V) RDS(ON) < 4mΩ (VGS = -V) RDS(ON) < 74mΩ (VGS = -4.V) SOP-8.
More informationComplementary MOSFET
General Description uses advanced trench technology to provide excellent Rds(on) and low gate charge. Complementary MOSFET Features N-channel Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)
More informationComplementary MOSFET
General Description ELM66EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. Maximum Absolute Ratings ELM66EA-S N-channel P-channel Vds=V Vds=-V Id=3.A(Vgs=.V) Id=-.A(Vgs=-.V)
More informationSSG4501-C N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V, R DS(ON) 28mΩ P-Ch: -5.3A, -30 V, R DS(ON) 50mΩ
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
More informationSMC3223S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION
SMC33S Single P-Channel MOSFET DESCRIPTION SMC33 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
More informationParameter Symbol Limit Unit IDM 20 A T A = PD T A =100
Features: Super high dense cell design for low R DS(ON) Rugged and reliable Surface Mount Package B VDSS =20V, R DS(ON) =24.5mΩ ID=6A Application DC-DC converters Power management in portable and Battery-powered
More informationSMC3251S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION
Single P-Channel MOSFET DESCRIPTION SMC5 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high
More informationDual N - Channel Enhancement Mode Power MOSFET 4502
Dual N - Channel Enhancement Mode Power MOSFET 4 344 DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or
More informationPDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration.
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationSMC3323SN. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.1A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS
SMC333SN Single P-Channel MOSFET DESCRIPTION SMC333 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
More informationPKP3105. P-Ch 30V Fast Switching MOSFETs
Super Low Gate Charge % EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -3V mω -6A Description TO22 Pin
More informationSMC3404S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS
SMC3S Single N-Channel MOSFET DESCRIPTION SMC3 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
More informationP-Channel Enhancement Mode MOSFET
Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of
More informationAM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE
DESCRIPTION is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching
More informationSMC2334SN. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 5.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS
SMCSN Single N-Channel MOSFET DESCRIPTION SMC is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
More informationAM8205 MOSFET+SCHOTTKY DIODE 20V DUAL N-CHANNEL ENHANCEMENT MODE
DESCRIPTION The is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high
More informationSymbol Parameter Rating Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V
Single P-Channel MOSFET DESCRIPTION SMC5455 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize
More informationSMC3332S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS
SMC333S Single N-Channel MOSFET DESCRIPTION SMC333 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
More informationAM9435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE
DESCRIPTION The is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to
More informationSymbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V
% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 3V mω A Description TO Pin Configuration
More informationFeatures. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationSMC6216SN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 3.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION
SMC66SN Single N-Channel MOSFET DESCRIPTION SMC66 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
More informationSGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 )
SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N09T Rev. 1.01 Jun. 2016 SGP100N09T 100V N-Channel MOSFET Description The SG-MOSFET
More informationAM V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process
More informationSymbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TC=25 C -22 A
SMC22H Single P-Channel MOSFET DESCRIPTION SMC22 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored
More information20V P-Channel Enhancement-Mode MOSFET
1 3 FEATURES RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System
More informationSMC7002ESN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 0.3A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION
SMC7ESN Single N-Channel MOSFET DESCRIPTION SMC7E is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
More informationN-Channel VDS = 30V, ID = 7.8A. 10V. -4.5V. P-Channel VDS = -30V, ID = -7A
Complementary MOSFET DESCRIPTION The SMC59 is the N+P-Channel Complementary mode power field effect transistors are using trench DMOS technology. advanced trench technology to provide excellent RDS(ON).
More informationAM2300. AiT Semiconductor Inc. APPLICATION ORDER INFORMATION PIN CONFIGURATION
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). FEATURES 20V/4.0A, RDS(ON)
More informationSMC3407GS. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.2A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION
SMC7GS Single P-Channel MOSFET DESCRIPTION SMC7G is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
More informationN & P-Channel 100-V (D-S) MOSFET
N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives
More informationVDS = 20V, ID = 13A. Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 13 A TA=70 C 10.
Dual N-Channel MOSFET DESCRIPTION FEATURES SMC4228 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored
More informationAM3416 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET
N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES is available in a SOT-23 package. 20V/6A, RDS(ON)=26mΩ(Max.) @VGS=4.5V RDS(ON)=37mΩ(Max.) @VGS=2.5V ESD Protected Super High Dense Cell Design Reliable and
More informationMOSFET SI7129DN (KI7129DN)
P-Channel SI79N (KI79N) Features -8 (FN) VS (V) =-3V I =-35 A (VGS =-V) RS(ON)
More informationP-Channel MOSFET KI2955DV. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage. Tstg -55 to 150
P-Channel ( SOT--6 ) Unit: mm. -. Features 6. VS (V) =-6V I =-. A (VGS =-V) RS(ON) < 9mΩ (VGS =-V) RS(ON) < mω (VGS =-.V) -..6.8 -.. +. -.. -. +. -.. -. -..68 -. G S Absolute Maximum Ratings Ta = Parameter
More informationS2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6
Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.
More informationFKD4903. N-Ch and P-Ch Fast Switching MOSFETs
FKD93 % EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID V 3mΩ 3A -V 5mΩ -A Description
More informationDual P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationN-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) SOP-8 A D
SM Type N-Channel Enhancement Features VS (V) = 30V SOP-8 I = 6 A (VGS = 0V) RS(ON) < 6.8mΩ (VGS = 0V) HEXFET Power S 8 A.50 0.5 S S 2 3 7 6 0.2 +0.04-0.02 G 4 5 Absolute Maximum Ratings Ta = 25 Parameter
More informationSPN230T06. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control
DESCRIPTION The is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored
More informationPin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1
General Description, N & P Pair enhancement mode MOSFET, uses Advanced Trench to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and
More informationSymbol Parameter Typ Max Units Thermal Resistance Junction to Ambient C t 10s 62 Thermal Resistance Junction to Ambient C
SMC93M Dual P-Channel MOSFET DESCRIPTION SMC93 is the Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.this advanced technology has been especially tailored
More informationSI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S
N-Channel MOSFET Features 85V,100A,Rds(on)(typ)=5.8mΩ @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech
More informationP-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Description The is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density
More informationN- & P-Channel Enhancement Mode Field Effect Transistor
N- & annel Enhancement Mode P2OAG TSOP- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 2V mω.a annel -2V 5mΩ -2.5A G D G D D S D2 5 2 G : GATE D : DRAIN S : SOURCE S S G S2 G2 ABSOLUTE MAXIMUM RATINGS (T
More informationSPP2303. P-Channel Enhancement Mode MOSFET
DESCRIPTION The is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to
More informationPFU70R360G / PFD70R360G
FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power
More informationWPM3028 WPM3028. Descriptions. Features. Applications. Order information. Typical R DS(on) (mω) V GS =-10V V GS =-5V -30
WPM32 WPM32 Single P-Channel, -3V, -11.5A, Power MOSFET Http://www.sh-willsemi.com V DS (V) Typical R DS(on) (mω) -3 11@ =-1V 15 @ =-5V S S S G Descriptions The WPM32 is P-Channel enhancement MOS Field
More informationSPP2301D. P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2301D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationPin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1
General Description, N & P Pair enhancement mode MOSFET, uses Advanced Trench to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and
More informationP-Channel Enhancement Mode Power MOSFET
DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationn Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International
More informationSPP3413. P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationP-Channel Enhancement Mode Field Effect Transistor
Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
More informationSPP2341. P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationSPP2305. P-Channel Enhancement Mode MOSFET
DESCRIPTION The is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to
More informationSTN2302. N-Channel Enhancement Mode MOSFET. 20V N-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and operation
More informationCPH6354. Power MOSFET 60V, 100mΩ, 4A, Single P-Channel. Features. Specifications
CPH64 Power MOSFET 6V, 1mΩ, 4A, Single P-Channel Features ON-resistance RDS(on)1=mW(typ.) 4V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings
More informationP-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP3415 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationPIN CONFIGURATION(SOT-23)
DESCRIPTION The SPP3401D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationAM7414 MOSFET N-CHANNEL ENHANCEMENT MODE
DESCRIPTION The is available in DFN8(3x3) Package ORDERING INFORMATION Package Type Part Number DFN8(3x3) J8R J8 SPQ: 5,000pcs/Reel J8VR V: Halogen free Package Note R: Tape & Reel AiT provides all RoHS
More informationSPN6338. Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN6338 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationAlfa-MOS Technology. AFC V N & P Pair Enhancement Mode MOSFET. General Description. Pin Description ( DFN5X6-8L ) Application
General Description, N & P Pair enhancement mode MOSFET, uses Advanced Trench to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and
More informationPIN CONFIGURATION(SOT-23-3L)
DESCRIPTION The SPP2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationSTP4435. P-Channel Enhancement Mode MOSFET. -30V P-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION
DESCRIPTION The STP35 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is
More information30V N-Channel Enhancement Mode MOSFET DESCRIPTION The UP8404 is the N-Channel logic enhancement mode power field effect transistor is produced using h
30V N-Channel Enhancement Mode MOSFET DESCRIPTION The UP8404 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This
More informationGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2
N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationSPP1433. P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP1433 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationTC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@ = 10 V This advanced technology has been especially
More informationP-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2319W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationN-Channel MOSFET IRF7413 (KRF7413) Top View. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage
SM Type IRF743 (KRF743) SOP- Features VS (V) = 3V I = A (VGS = V) RS(ON) < mω (VGS = V).5.5 S S S G 7 3 4 5. +.4 -. Source Source 3 Source 4 Gate 5 rain rain 7 rain rain Top View Absolute Maximum Ratings
More informationN-Channel Enhancement Mode MOSFET
Features 20V/3A, R DS(ON) =50mΩ(typ.) @ V GS =4.5V Pin Description R DS(ON) =90mΩ(typ.) @ V GS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT23-3L
More informationSPN9910. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch Synchronous Buck Converter
DESCRIPTION The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationSPC6605. N & P Pair Enhancement Mode MOSFET
DESCRIPTION The SPC6605 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored
More informationSURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary
PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier
More informationP-Channel Enhancement Mode Vertical D-MOS Transistor
Features: Voltage Controlled P-Channel Small signal switch High Density Cell Design for Low RDS(ON) High Saturation Current SOT-23 Applications: Line Current Interrupter in Telephone Sets Relay, High Speed
More informationSTN4420. N-Channel Enhancement Mode MOSFET. 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE APPLICATIONS PIN CONFIGURATION
DESCRIPTION The STN is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable
More informationIRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C. 1 TECHNOLOGY. Product Summary MO-036AB
PD-94432C RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36) Product Summary Part Number Radiation Level RDS(on) ID IRHG57 K Rads (Si).29Ω.6A IRHG53 3K Rads (Si).29Ω.6A IRHG54 5K Rads (Si).29Ω.6A IRHG58
More informationMCH6664. P-Channel Power MOSFET 30V, 1.5A, 325mΩ, Dual MCPH6. Features
Ordering number : ENA81A MCH6664 P-Channel Power MOSFET V, 1.A, mω, Dual MCPH6 http://onsemi.com Features ON-resistance Pch : RDS(on)1=mW (typ.) 4V drive Halogen free compliance Specifications Absolute
More informationSPN9971. N-Channel Enhancement Mode MOSFET. Power Management in Note book Powered System DC/DC Converter Load Switch
DESCRIPTION The SPN9971 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN9971 has been designed specifically to
More informationSJ-FET. TSA20N60S, TSK20N60S 600V N-Channel MOSFET. September, 2013
TSA20N60S, TSK20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
More informationIRFF9130 JANS2N6849 JANTXV2N V, P-CHANNEL. Absolute Maximum Ratings. Features: 1 PD D. REPETITIVE AVALANCHE AND dv/dt RATED
PD - 90550D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF9130-100V 0.30Ω -6.5A IRFF9130 JANTX2N6849 JANTXV2N6849 JANS2N6849
More informationMCH6662. Power MOSFET 20V, 160mΩ, 2A, Dual N-Channel. Features. Specifications
MCH666 Power MOSFET V, 16mΩ, A, Dual N-Channel Features ON-Resistance Nch : RDS(on)1=1mW (typ) 1.8V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum
More information2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary
PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads
More informationPFP15T140 / PFB15T140
FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel
More informationPE2302C. N-Channel Enhancement Mode Power MOSFET 2302C DESCRIPTION GENERAL FEATURES. Application. Page 1
N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE30C uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is
More information2N7620M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary
PD-9735 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) Product Summary Part Number Radiation Level RDS(on) ID IRHLA77Z4 K Rads (Si).6Ω.8A IRHLA73Z4 3K Rads (Si).6Ω.8A 2N762M2
More informationSymbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit 20* 20* I D -Continuous (TC = 100 ) 12*
TSP20N60S,TSF20N60S, TSB20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance
More informationPIN CONFIGURATION(SOT-23)
DESCRIPTION The is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while
More informationCPH3360. Power MOSFET 30V, 303mΩ, 1.6A, Single P-Channel
Power MOSFET 30V, 303mΩ, 1.6A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationHigh Speed Switching ESD Diode-Protected Gate C/W
Ordering number : ENA1559B Power MOSFET 60V, 62mΩ, 12A, Single P-Channel http://onsemi.com Features Low On-Resistance Low Gate Charge Pb-free and RoHS Compliance High Speed Switching ESD Diode-Protected
More informationTHERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θjc 6 C / W Junction-to-Ambient R θja 42 C / W STATIC
N- & annel Enhancement Mode P3ND5G PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 3 mω 5A annel -3 36mΩ -9A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 5 C Unless
More information