Testing Silicon Detectors in the Lab
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1 Testing Silicon Detectors in the Lab Thomas Bergauer (HEPHY Vienna) 2 nd IPM-HEPHY detector school 15 June 2012
2 Schedule of my talk during 1 st detector school Semiconductor Basics (45 ) Detector concepts: Pixels and Strips (45 ) Strip Detector Performance (45 ) Quality Control on strip detectors (45 ) Radiation Damage (45 ) 15 June 2012 Thomas Bergauer (HEPHY Vienna)
3 Quality Control on strip detectors Introduction Measurement techniques Electrically Optically Mechanically Aging Studies Construction of Detector Modules Wire Bonding Beam Tests 15 June 2012 Thomas Bergauer (HEPHY Vienna)
4 15 June 2012 Thomas Bergauer (HEPHY Vienna) What is Quality control? Characterize devices Electrically: currents, capacitances Mechanically: bondability, sag, bow Optically: dust, dirt, lithography issues, dimensions if they comply to the specifications Define acceptance criteria E.g. CMS: number of non-working strips <1% non-working strips to be excluded from being used What means not working? Outside parameter range (e.g. 200pF<C ac <220pF)
5 Electrical parameters Typical Setup at HEPHY Vienna Light-tight box Instruments Computer running NI Labview 15 June 2012
6 Measurement of Sag Bow Thickness Mechanical parameters Using 3D mechanical measurement system Coordinate measurement machine (CMM) 15 June 2012 Thomas Bergauer (HEPHY Vienna)
7 15 June 2012 Thomas Bergauer (HEPHY Vienna) Optical measurements Optical microscopy Olympus BX60+DP21 Electron microscopy FEI Quanta 200 FEG SEM HEPHY cleanroom USTEM Vienna UT
8 15 June 2012 Thomas Bergauer (HEPHY Vienna) ELECTRICAL MEASUREMENTS
9 Instruments Electrometer (precise Amp-meter) LCR Meter Source Measure Unit (SMU) 15 June 2012
10 15 June 2012 Thomas Bergauer (HEPHY Vienna) What is a Source Measure Unit? Source Voltage source Constant current source Amp-meter Volt-meter in one device Keithley 237
11 What is a Source Measure Unit? (cont.) High precision Amp-meter K237: 250fA at 700V High precision needs Triax connectors 15 June 2012 Thomas Bergauer (HEPHY Vienna)
12 15 June 2012 Thomas Bergauer (HEPHY Vienna) STRIP-BY-STRIP CHARACTERISATION
13 Thomas Bergauer (HEPHY Vienna) Strip-by-strip Test Setup Sensor in Light-tight Box Vacuum support jig is carrying the sensor Mounted on movable table in X, Y and Z Needles to contact different structures on sensor What do we test? Electrical parameters strip failures
14 15 June 2012 Thomas Bergauer (HEPHY Vienna) Common strip failures Open Strip: Shorted Strip: Open bias resistor: Open implant at via: Open implant: Pinhole (short between implant and metal):
15 Thomas Bergauer (HEPHY Vienna) Global parameters: IV-Curve: Dark current, Breakthrough CV-Curve: Depletion voltage, Total Capacitance Strip Parameters e.g. strip leakage current I strip poly-silicon resistor R poly coupling capacitance C ac dielectric current I diel What do we test?
16 15 June 2012 Thomas Bergauer (HEPHY Vienna) Switching Scheme
17 15 June 2012 Thomas Bergauer (HEPHY Vienna) Measurement validation Direct measurement of oxide thickness by electron microscopy SEM result: 355nm average from C_ac measurement: nm Vendor average: nm nm nm Oxide thickness [nm] nm nm nm nm from C_ac SEM Micron nm nm Strip number
18 Measurement of the inter-strip resistance SMU 1-100V GND applies bias voltage Electrometer A 0...3V (5V) SMU 2 A GND Current at 0V is strip leakage current, interstrip resistor value from slope of current when ramping GND ramps potential on neighbouring DC pad -> Bias resistor value from slope of current 15 June 2012 Thomas Bergauer (HEPHY Vienna)
19 Measurement of the inter-strip resistance HPK sensor, n-side, strip 1-2 HPK sensor, p-side, strip 6-7 R_int measurement, Belle II HPK sensor 8, n-side R_int measurement, Belle II HPK sensor 8, p-side -5, ,5 1 1,5 2 2,5 3 3,5-5,11 1,535 1,53 Current on DC1 pad [na] -5,115-5,12-5,125-5,13-5,135-5,14-5,145 Potential on DC2 pad [V] Current on DC1 pad [na] 1,525 1,52 1,515 1,51 1,505 1,5 1, Potential on DC2 pad [V] I_strip = na R_int = 92.6 GΩ R_poly = 2.8 MΩ I_strip = na R_int = GΩ R_poly = 17.9 MΩ First stripscan using this method currently ongoing 15 June 2012 Thomas Bergauer (HEPHY Vienna)
20 15 June 2012 Thomas Bergauer (HEPHY Vienna) Spreading Silicon Detectors Resistance in High Energy Profiling Physics Spreading Resistance Profiling Polishing: 0,5 Needle : r=7µm, 3g Stepsize: 10µm Resolution: ~110nm ~ 1,4µm
21 15 June 2012 Thomas Bergauer (HEPHY Vienna) PROCESS MONITORING
22 What is Process Monitoring? Each wafer hosts additional test structures around main detector standard set of test structures is called half moon (because of its shape) Test structures used to determine one parameter per structure Assuming that sensor and test structures behave identically Some parameters are not accessible on main detector (e.g. flatband voltage of MOS), but important for proper operation TS-CAP GCD baby diode MOS 2 sheet Thomas Bergauer (HEPHY Vienna) CAP-TS-AC CAP-TS-AC MOS 1
23 15 June 2012 Thomas Bergauer (HEPHY Vienna) Test Structures Description TS-CAP: Coupling capacitance C AC to determine oxide thickness IV-Curve: breakthrough voltage of oxide Sheet: Aluminium resistivity p + -impant resistivity Polysilicon resistivity GCD: Gate Controlled Diode IV-Curve to determine surface current I surface Characterize Si-SiO 2 interface CAP-TS-AC: Inter-strip capacitance C int Baby-Sensor: IV-Curve for dark current Breakthrough CAP-TS-DC: Inter-strip Resistance R int Diode: CV-Curve to determine depletion voltage V depletion Calculate resistivity of silicon bulk MOS: CV-Curve to extract flatband voltage V flatband to characterize fixed oxide charges For thick interstrip oxide (MOS1) For thin readout oxide (MOS2)
24 Thomas Bergauer (HEPHY Vienna) Measurement Setup Probe-card with 40 needles contacts all pads of test structures in parallel Half moon fixed by vacuum Micropositioner used for Alignment In light-tight box with humidity and temperature control Instruments Source Measurement Unit (SMU) Voltage Source LCR-Meter (Capacitance) Heart of the system: Crosspoint switching box, used to switch instruments to different needles Labview and GPIB used to control instruments and switching system
25 15 June 2012 Thomas Bergauer (HEPHY Vienna) Probe Card with support Half moon on sliding table Setup Probestation
26 15 June 2012 Thomas Bergauer (HEPHY Vienna) Fully automated Labview Software Blue Fields: Obtained results extracted from graph by linear fits (red/green lines) Yellow Fields: Limits and cuts for qualification
27 Passed/Not Passed Lights After all measurements finished Window pops up One light for each test Green: within limits Red: out of limits Allows immediate judgment about quality Pressing OK button writes data directly into central database (CMS used Oracle) 15 June 2012 Thomas Bergauer (HEPHY Vienna)
28 Thomas Bergauer (HEPHY Vienna) Example measurement: CV on MOS Metal Oxide Semiconductor Used to determine fixed oxide charges by measuring socalled flat-band voltage Measurement by taking capacitance vs. voltage a) V flatband = 0 (Ideal oxide without any charges) b) Accumulation layer c) Depletion d) Inversion
29 15 June 2012 Thomas Bergauer (HEPHY Vienna) Process monitoring on irradiated structures Needs measurement at low temperatures (-20 degc) Dedicated setup: Sensor support is cooled by Peltier elements and liquid cooling circuit Dry atmosphere to avoid condensation (Nitrogen or dry air) Dark current scales with temperature: Lowered to 50% when temperature drops by 7 degrees
30 15 June 2012 Thomas Bergauer (HEPHY Vienna) Low noise measurements Metal plate (HV side) SilPad (insulator) COOLING Guard Metal plate (Sense) SilPad (insulator) Metal plate (Guard) Al2O3 (insulator) Guard COOLING
31 Low noise measurements (2) Shielded cables necessary for whole conduction path Coax often sufficient For extreme sensitive measurements (e.g. pa): Triax cables necessary 15 June 2012 Thomas Bergauer (HEPHY Vienna)
32 15 June 2012 Thomas Bergauer (HEPHY Vienna) Long-term Stability and Thermal Cycling AGING STUDIES
33 Thomas Bergauer (HEPHY Vienna) Long-term stability Monitoring of leakage current over certain timescale Certain effects cause instabilities Micro-discharges Chemical reactions
34 15 June 2012 Thomas Bergauer (HEPHY Vienna) Chemical reaction with Potassium Leftover from SiO 2 etching serving as a catalyst for Al -> Al 2 O 3 reaction Corrosion 17h later 92h later After 162h After 1200h
35 15 June 2012 Thomas Bergauer (HEPHY Vienna) OPTICAL INSPECTION
36 Scratches & Marks Round scratches occur on every sensor maybe due to automatic sensor handling? 15 June 2012 Thomas Bergauer (HEPHY Vienna)
37 15 June 2012 Thomas Bergauer (HEPHY Vienna) Residues and other optical issues
38 15 June 2012 Thomas Bergauer (HEPHY Vienna) MECHANICAL MEASUREMENTS
39 Measurement of Sag Bow Thickness Mechanical parameters Using 3D mechanical measurement system Coordinate measurement machine (CMM) 15 June 2012 Thomas Bergauer (HEPHY Vienna)
40 Grid of 7 by 13 measurement points Measure exact same points on sensor and on jig alone (with vacuum applied) Graphic right: difference of the two runs Calculate average thickness Sensor Thickness 15 June 2012 Thomas Bergauer (HEPHY Vienna)
41 15 June 2012 Thomas Bergauer (HEPHY Vienna) Sag of the vacuum jig Hold sensor with vacuum through porous stone
42 Run 1 without vacuum Run 2 with vacuum Graphic on the right is difference Maximum difference: 42µm Subtracting sag of vacuum jig: 13µm Sensor Flatness 15 June 2012 Thomas Bergauer (HEPHY Vienna)
43 15 June 2012 Thomas Bergauer (HEPHY Vienna) MODULES
44 15 June 2012 Thomas Bergauer (HEPHY Vienna) Module Construction Connecting a bare sensor with a readout chip onto a mechanical support structure
45 Detector Modules A detector module consists of Front-end hybrid containing readout chips (CMS: APV25) Pitch adapter Silicon Sensor frame/support Wire bonding for connections 15 June 2012 Thomas Bergauer (HEPHY Vienna)
46 15 June 2012 Thomas Bergauer (HEPHY Vienna)
47 Basic Element of the Tracker: Module Components: Carbon fiber/graphite frame Kapton flex circuit for HV supply Front End Hybrid housing readout chip Pitch Adaptor One or two silicon sensors Total: 29 module designs 16 sensor designs 12 hybrid designs 15 June 2012 Thomas Bergauer (HEPHY Vienna)
48 Thomas Bergauer (HEPHY 22 May 2011 Thomas Bergauer Vienna) (HEPHY Vienna) 48 Module Assembly Module assembly for CMS was manual process in Vienna: CF frame was fixed with vacuum support Glue dispensed Sensor put onto frame using gantry positioning system Glue curing Using 3D coordinate measurement machine for measurement of assembly precision (<10 micron) Throughput: 4 modules per day
49 Thomas Bergauer (HEPHY 22 May 2011 Thomas Bergauer Vienna) (HEPHY Vienna) 49 Automatic Module Assembly Robotic assembly system which: 1. Apply glue on frame 2. Place hybrid onto frame 3. Place sensor onto frame 4. Optical measurement of placement precision 5. Glue curing 6. Second measurement of alignment precision Displacement data entered in TrackerDB and used for correction during track reconstruction (more precise: as starting point of track-based alignment) Assembly precision σ 9µm
50 Wire bonding Ultrasonic welding technique 17 or 25 micron bond wire of Al-Sialloy Pull-tests to verify bond quality 15 June 2012 Thomas Bergauer (HEPHY Vienna)
51 15 June 2012 Thomas Bergauer (HEPHY Vienna) Tracker Outer Barrel (TOB) Tracker Outer Barrel (TOB) mainly produced in US 5550 modules 688 Rods Tracker Support Tube: (24 different species) 1.1m
52 15 June 2012 Thomas Bergauer (HEPHY Vienna) Tracker Inner Barrel (TIB) TIB mainly produced in Italy 3800 modules 16 shells + 6 disks 4 layers 2 units
53 15 June 2012 Thomas Bergauer (HEPHY Vienna) Tracker End Caps (TEC) TEC modules and petals mostly from Central Europe (Belgium, Germany, France, Austria) 6850 modules (10 different species) 288 petals (8 different species)
54 15 June 2012 Thomas Bergauer (HEPHY Vienna) TOB plus TIB/TID
55 15 June 2012 Thomas Bergauer (HEPHY Vienna) TEC Installation
56 15 June 2012 Thomas Bergauer (HEPHY Vienna) BEAM TESTS
57 15 June 2012 Thomas Bergauer (HEPHY Vienna) Purpose of beam tests Realistic test of detector plus readout system. Results are: SNR (could also be obtained with radioactive source on lab test bench) Residuals/resolution studies only with high-energy beam Multiple scattering at low energy does not allow such measurements Beam telescope needed Also realistic test of Cooling system slow control Mechanical stages Data Acquisition
58 15 June 2012 Thomas Bergauer (HEPHY Vienna) Beam test impressions
59 15 June 2012 Thomas Bergauer (HEPHY Vienna) Example 1: resolution studies TESTAC:
60 15 June 2012 Thomas Bergauer (HEPHY Vienna) Example 1 (cont.): Resolution Studies
61 15 June 2012 Thomas Bergauer (HEPHY Vienna) Example 2: Performance before/after irradiation
62 Example 2 (cont.): Sensor design Belle II sensors Double sided Structures for strip separation on n-side needed p-stop 3 design with 4 different layouts Baby-Sensors 1) atoll p-stop 2) common p-stop 3) combined p-stop Main sensor Muster 1: atoll p-stop Muster 2: common p-stop Muster 3: combined p-stop 15 June 2012 Thomas Bergauer (HEPHY Vienna)
63 Example 2 (cont.): Analysis of data Comparison of p-stop geometry SNR common combined atoll p-stop type 15 June 2012 Thomas Bergauer (HEPHY Vienna)
64 15 June 2012 Thomas Bergauer (HEPHY Vienna) Part 4: Quality Control on strip detectors END
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