Preparing for the Future: Upgrades of the CMS Pixel Detector
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1 : KSETA Plenary Workshop, Durbach, KIT Die Forschungsuniversität in der Helmholtz-Gemeinschaft
2 Large Hadron Collider at CERN Since 2015: proton proton 13 TeV Four experiments: ATLAS, CMS, ALICE, LHCb Jura Geneva 9 km 100 m 2
3 Compact Muon Solenoid (CMS) Muon detectors in magnet yoke Superconducting coil (3.8 T): Deflection of charged particles Calorimeters Determination of energies Intera ction p oint Tracker Determination of trajectories Beam axis 21 m long, 16 m high, t (ATLAS: 46 m long, 25 m high, 7000 t) 3
4 LHC Schedule Future of LHC: Phase 1 Phase 2 Two planned upgrades for all LHC experiments, at CMS: Phase 1: Replacement of pixel detector, new readout for calorimeters, Phase 2: Replacement of complete silicon tracker, new L1 trigger system, new forward calorimeters, extension of muon system, 4
5 Phase I Upgrade 5
6 CMS Pixel Phase I Upgrade LHC Run 2: Increase of luminosity up to cm-2s-1 (particles / area / time) current (3 layers) Phase I Upgrade: Additional barrel layer 4 Smaller beam-pipe radius innermost pixel layer moves closer to interaction point Significant data loss with current readout chip (ROC) unavoidable new ROC was developed One half of the modules required for barrel layer 4 are being produced at KIT 6 43 mm 72 mm 110 mm new (4 layers) 29 mm 68 mm 109 mm 160 mm
7 Pixel Detector Module A module is the smallest subunit of the CMS Pixel Detector About 400 modules to be assembled at KIT Several tests during assembly Optical inspections Electrical tests X-ray tests Connector Signal and Power cable TBM HDI 27 mm Sensor ROCs Basestrips 67 mm 7
8 Semiconductor Detectors In silicon with the size of a standard silicon detector there are 109 free charge carriers Only electrons are generated by a charged particle Signal would be lost in the amount of free charge carriers Free charge carriers need to be reduced to identify charged particles traversing the detector Working principle: diode exploit depletion zone of pnjunction which is extended by reverse biasing 8 Track of a charged particle Readout Chip Bump (metal connection) Depletion Region Sensor cross section of a single pixel
9 Production chain Sensor wafer production, IV test Sensor UBM + dicing ROC production ROC wafer probe test Bare Module test/verification Bonding x 16 Optical inspection UBM + SnPb bumps thinning/dicing Optical inspection ROC cleaning ROC Re-working Reflow Module assembly + test in-house external 9 Sensor IV test Cold test + calibration Half-shell integration
10 Production chain Sensor wafer production, IV test Sensor UBM + dicing ROC production ROC wafer probe test Bare Module test/verification Bonding x 16 Optical inspection UBM + SnPb bumps thinning/dicing Optical inspection ROC cleaning ROC Re-working Reflow Module assembly + test in-house external 10 Sensor IV test Cold test + calibration Half-shell integration
11 Bare Modules Structure Bare modules consist of 1 sensor and 16 readout chips Pixels of sensor and readout chips are connected via bump bonds (e.g. SnPb, In) Bonding uses thermocompression to connect sensor to ROCs Bare module test: 1) Electrical properties of the silicon sensor 2) Functionality test of the readout chips 3) Connection of pixels via bump bonds cross section of a bare module 11
12 Bare Modules Testing Readout chips contacted via needle card on a dedicated custom probe station wire bond pads remain intact after test If bad readout chips or bump bond connections are identified Rework of single ROCs possible Fast feedback for bonding staff wire bond pads needle card bias needle 12 wire bond pads
13 1) Electrical properties of the silicon sensor Current-voltage characteristics of all bare modules are measured Grade A: I150V < 2 µa I150V / I100V < 2 di/dt150v = 0 Grade B: I150V < 10 µa I150V / I100V < 2 di/dt150v = 0 Otherwise Grade C Current-voltage characteristics of five bare modules 13
14 2) Functionality test of the readout chips Check if readout chip is programmable Pixel Alive Test: check responsiveness of each pixel cell air capacitance bump bond switch 2 preamplifier switch 1 Pixel Alive Map registered calibration pulses sensor column (pixel address) Calibration signal injected directly into preamplifier Dead pixel cells identified 20 calibration line readout chip row (pixel address) 0
15 3) Connection of Pixels via bump bonds Calibration signal injected via air capacitance into sensor and collected through bump bond air capacitance bump bond switch 2 preamplifier switch 1 Bump Bond Map registered calibration pulses sensor column (pixel address) Dead bump bonds identified 20 calibration line readout chip row (pixel address) 0
16 3) Connection of Pixels via bump bonds Calibration signal injected via air capacitance into sensor and collected through bump bond sensor air capacitance bump bond switch 2 preamplifier switch 1 Bump Bond Map registered calibration pulses Grade A: <1% dead pixel / bumps Grade B: <4% dead pixel / bumps Grade C: >4% dead pixel / bumps column (pixel address) Dead bump bonds identified 20 calibration line readout chip row (pixel address) 0
17 Off-Topic Yellow Light of Death: Lead free bumps caused cold solder joints bake PS C bake 17
18 Phase II Upgrade 18
19 CMS Pixel Phase II Upgrade Upgrade of the LHC: HL-LHC (beginning 2024) 3 Higher Luminosity ~200 primary vertices every 25 ns LHC Harsher conditions set new requirements Simulation of tracks More radiation tolerant New materials Higher granularity Smaller pixels (current pixel size: 100µm 150µm) 19 HL-LHC
20 New Sensor Designs New readout chips required to investigate sensors with smaller pixels New readout chips available end of this year Meanwhile: use available readout chips and intermediate sensor designs Problem: Radiation hardness of current readout chips 100µm 150µm (standard) 100µm Intermediate sensors 150µm Bump connection to readout chip 20
21 New Sensor Designs New readout chips required to investigate sensors with smaller pixels New readout chips available end of this year Meanwhile: use available readout chips and intermediate sensor designs Problem: Radiation hardness of current readout chips 100µm 150µm (standard) 50µm 300µm 100µm Intermediate sensors Bump connection to readout chip 50µm 150µm 300µm 21
22 New Sensor Designs New readout chips required to investigate sensors with smaller pixels New readout chips available end of this year Meanwhile: use available readout chips and intermediate sensor designs Problem: Radiation hardness of current readout chips Bump connection to readout chip 150µm 50µm 100µm 150µm (standard) 50µm 300µm 25µm 600µm 100µm Intermediate sensors 25µm 300µm µm
23 ROC Radiation Tolerance Problem: Available readout chip is not radiation hard enough to withstand target dose Irradiate bare sensors and bump bond to readout chip afterwards Problem: Temperature induces change of sensor properties (annealing) Low temperature bump bonding required to avoid sensor annealing Solution: Gold to SnPb bonding Gold-studs (Simon Kudella) SnPb bump Gold-studs RoC Sensor Assembly with Gold-Studs (Simon Kudella) Institut für Prozessverarbeitung und Elektronik (IPE) 23
24 Test Beam Measurements Energy of test beams is sufficiently high, so particles penetrate several detector layers Telescope with 6 detector planes to reconstruct track of electrons Magnetic field of CMS can be simulated by tilting the Device Under Test (DUT) To be measured: Tracks with DUT entry Efficiency = Telescope Tracks through DUT [testbeam.desy.de] Telescope Charge collection efficiency DUT 24
25 Exemplary Results Former test beam measurements of working group: Telescope y-direction (µm) Efficiency Maps Same pixel size, but different implant size (light blue) schematic of 4 pixel cells Telescope x-direction (µm) Telescope y-direction (µm) Efficiency drop for smaller pixel implant sizes after irradiation Test beam results (Daniel Schell) 25 Telescope x-direction (µm)
26 Summary LHC luminosity will be increasing in the coming years Performance of CMS Pixel Detector will suffer from radiation damage and rate limitation Entire CMS Pixel Detector will be replaced beginning of 2017 Half of required modules for barrel layer 4 to be produced at KIT Detailed quality checks of all components are performed during production Irradiation studies confirm that the produced modules can handle the expected radiation damage In 2024 the CMS Pixel Detector has to be replaced again Test beam measurements to evaluate new sensor materials/designs are in preparation 26
27 Thank you. 27
28 Bare Modules Test Station 28
29 Module Irradiation 29
30 Phase I Upgrade Module Performance 30
31 Module Performance Modules suffer from radiation damage during operation in CMS Irradiate samples to expected dose (for pixel layers 4, 3 and 2) to simulate behaviour at end of 2023 (Phase I) Performance of readout chip suffers from radiation damage # entries # entries Establish test routines to recover performance as far as possible manual tuning signal (a.u.) 31 signal (a.u.)
32 Signal Development Most probable value of Landau Gaussian distribution is obtained for different voltages to determine: Depletion voltage Charge collection efficiency 32
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