Study of irradiated 3D detectors. University of Glasgow, Scotland. University of Glasgow, Scotland
|
|
- Horace Craig
- 5 years ago
- Views:
Transcription
1 Department of Physics & Astronomy Experimental Particle Physics Group Kelvin Building, University of Glasgow Glasgow, G12 8QQ, Scotland Telephone: ++44 (0) Fax: +44 (0) GLAS-PPE/ Study of irradiated 3D detectors Patrick Roy a, G. Pellegrini a,b, A. Al-Ajili a, L. Haddad a, J. Melone a, V.O Shea a, K.M. Smith a, V. Wright a, M. Rahman a a Department of Physics and Astronomy University of Glasgow, Scotland b Department of Electronics and Electrical Engineering University of Glasgow, Scotland p.roy@physics.gla.ac.uk Abstract The use of the 3D detector geometry allows the life of semiconductor devices to be extended in harsh radiation environments or the usage of less than optimal material (i.e. with poorer charge collection efficiency). Three different production methods have been investigated: inductively coupled plasma etching, laser machining and photoelectrochemical etching. The electrical characteristics of the resulting test devices made in low resistivity silicon and gallium arsenide have been studied. Some of these 3D detectors were characterised after irradiation by 300 MeV/c pions, up to a fluence of π/cm 2 at the Paul Scherrer Institute, Villigen. 1 / 11
2 1 Introduction The need for radiation tolerant semiconductor detectors for future high luminosity colliders can be met through different means [1]. Usually, four main options are possible. The first and least advantageous option consists in simply producing cheap, non-radiation hard detectors and replacing them as their performance degrades. The second option involves a variation on the detector operation conditions such as using detectors under partially depleted, forward biased or low temperature conditions. The third option exploits novel material engineering. Finally the fourth option is device engineering such as adapting the geometry of the detectors, which is the one investigated with the production of the 3D detectors [2]. In practice, some of those options can be combined for even better results. The electrodes for the 3D detectors are located through the bulk of the semiconductor, not at the surface as is the case for the standard co-planar geometry (Fig. 1). The unit cell considered here consists of an hexagonal structure, where the central anode is surrounded by six cathodes. The collection time and distance involved are thus a function of the electrode spacing, not of the device thickness. For the same active volume compared to the standard co-planar geometry, the charge collection time and operational bias are thus greatly reduced. The faster collection time leads to a reduced probability of trapping, thus improving the charge collection efficiency in presence of traps compared to the co-planar geometry. For those reasons, the useful lifetime of the device is extended. 2 / 11
3 2 Detector fabrication In order to make a 3D detector, vias have to be created and partially or totally filled in order to produce electrodes. The processes considered for the creation of the vias were dry etching, laser machining and photoelectrochemical (PEC) etching. An important goal is to maximise the aspect ratio (hole depth to diameter). The idea is for the vias to reach the full depth of the sample (typically µm) while keeping their volumes to a minimum. It is important to keep in mind that the vias are usually considered as inactive regions as the detecting medium is actually the volume between the electrodes. For this reason, a diameter of less than 2 µm is desirable for the vias. 2.1 Hole creation The strength/weakness of the various fabrication methods are summarised in Table 1 with examples of vias in Fig. 2. See reference [3] for a detailed explanation of the actual fabrication steps. As can be seen in Table 1, the only process that will allow reaching the goal of less than 2 µm hole going through more than 200 µm of silicon is photoelectrochemical etching. Another advantage of that method is that, contrary to the two other methods [4], no defects are created deep on the sidewalls of the vias, which cause problems for Schottky contacts. 2.2 Electrode formation A simple and cost effective method of producing electrodes in a semiconductor consists of evaporating a metal in order to create Schottky contacts. Although this is a valid option for GaAs, in the case of silicon this is only a short-term solution as the goal is to produce p-n junctions in order to decrease the leakage current. Once the electrodes have been formed inside the vias, they have to be connected to the read-out electronics. Eventually flip-chip bump bonding technology will be used in order to read out the 3 / 11
4 signal from each electrode individually (or that from the central electrode of each unit cell), but for testing purposes two simpler approaches had to be adopted. In the case of current versus voltage (I-V) and capacitance versus voltage (C-V) measurements, the whole array can be studied at the same time by using the connecting scheme shown in Fig. 3 a). Tracks consisting of 150 nm of aluminium connect all the central electrodes to a single pad, while the surrounding electrodes are all connected to a second pad. This method allows the use of wire bonding to ground one pad while reading the signal from the second pad. For spectroscopy measurements, while the surrounding electrodes are all connected to a single ground, one central electrode is directly wire bonded in order to measure a single unit cell as shown in Fig. 3 b). 3 Results and analysis The electrical characteristics of the 3D detectors have been investigated before and after irradiation using the contacting scheme shown in Fig. 3. The semiconductors used for this preliminary study were from low resistivity (~100 Ÿ-cm) material. The silicon 3D detectors were made by dry etching (10 µm diameter x 130 µm deep electrodes with an 85 µm pitch in a 250 µm substrate). The gallium arsenide 3D detectors were made by laser machining (10 µm diameter x 250 µm deep electrodes with an 85 µm pitch in a 500 µm substrate). 3.1 Irradiation Three silicon 3D detectors and one gallium arsenide 3D detector have been irradiated at the Paul Scherrer Institute (PSI, Villigen). Using a beam of 300 MeV/c pions at a flux of π/cm 2 /day, fluences between and π/cm 2 were reached. The 1 MeV neutron equivalent fluences can be obtained by multiplying the 300 MeV/c pion fluences by 0.82 [5]. 4 / 11
5 3.2 Current-voltage measurements The current versus voltage (I-V) measurements were performed using a Keithley 237 (high voltage source measurement unit) controlled by a LabView program. As can be seen from Fig. 4 a), before and at low irradiation, the I-V characteristics of the silicon 3D detectors are those that can be expected for an ideal diode. Figure 4 b) shows that for fluences of and π/cm 2, no real distinction between reverse or forward bias can be observed in silicon. The total current has been normalised to a single unit cell. The gallium arsenide sample shows a similar behaviour in Fig. 4 c). 3.3 Capacitance-voltage measurements The capacitance versus voltage (C-V) measurements were performed using a Keithley 237 and a Hewlett-Packard 4274A (Multi-frequency LCR meter) controlled by a LabView program. As can be seen from Fig. 4 d), the capacitance measurements performed at low frequencies on a silicon 3D detector reveal the presence of defects even before irradiation [6]. Those defects are a combination of the initial low resistivity material and the dry etching used to create the vias [4]. By using C-V measurements made at high frequency (100 khz), it is possible to be insensitive to those defects and thus obtain the value of the full depletion bias. As can be seen in Fig. 4 e), for the silicon 3D detectors before irradiation the depletion voltage is around 32 volts and decreases to 18 volts after a fluence of π/cm 2. No C-V measurements were possible on the gallium arsenide sample. 3.4 Analysis The full depletion biases of the silicon 3D detectors were extracted from a C-V measurement at each fluence. Those values are reported in Fig. 5 a), where it can be seen that too few irradiation steps were taken to be able to determine without doubt if space charge inversion has been reached, although the figure does seem to indicate that 5 / 11
6 it is the case. Figure 5 b) shows the value of the leakage current measured at full depletion for the different irradiation steps of the silicon 3D detectors. Even though the I-V curves are moving away from the ideal diode, the values of the leakage current at full depletion are actually decreasing, thus improving the performance of the detectors. 4 Conclusion This preliminary study of 3D detectors, made from low resistivity silicon and gallium arsenide, has shown that they still operate properly after pion fluences up to π/cm 2. Furthermore, the performance of those 3D detectors has improved as a function of fluence, requiring a slightly lower bias and having a lower leakage current at full depletion. A more extensive study of 3D detectors made in detector grade semiconductor material will follow this study. Acknowledgements The authors would like to thank M. Moll, M. Glaser and K. Gabathuler for performing the irradiations at PSI and the TOPS facility for the use of the laser. This project was funded in part by the Particle Physics and Astronomy Research Council (PPARC, UK) and by the European Commission as part of the Fifth Framework Programme, G5RD- CT References [1] "R&D Proposal: Development of radiation hard semiconductor devices for very high luminosity colliders", LHCC /P6 (2002). [2] S. Parker, "3D - A Proposed New Architecture for Solid State Radiation Detectors", Nucl. Instr. and Meth. A 395 pp (1997). 6 / 11
7 [3] G. Pellegrini et al., "Technology Development of 3D Detectors for High Energy Physics and Imaging", Nucl. Instr. and Meth. A 487 pp (2002). [4] M. Rahman, "Channelling and Diffusion in Dry-Etching Damage", J. Appl. Phys. 82 p. 5 (1997). [5] A. Vasilescu and G. Lindstroem, "Displacement damage in silicon", on-line compilation at [6] Z. Li and H.W. Kraner, "Studies of frequency dependent C-V characteristics of neutron irradiated p + n silicon detectors", IEEE Trans. Nucl. Sci. Vol. 38 No 2, pp (1991). Figures Fig. 1: Cross sections of semiconductor detectors made using: a) standard co-planar geometry and b) the 3D geometry. Fig. 2: Cross sections of vias (10 µm diameter) obtained in silicon by: a) inductively coupled plasma, b) laser machining and c) photoelectrochemical etching. Fig. 3: Circuits created to perform electrical measurements: a) all the central electrodes are connected to a single bond pad while the surrounding electrodes are grounded and b) one central electrode is wire bonded while the surrounding electrodes are grounded. Fig. 4: Current versus voltage results for silicon 3D detectors at a) low and b) high fluences as well as for c) a gallium arsenide 3D detector. Capacitance versus voltage results in silicon 3D detectors for: d) 1 to 100 khz before irradiation and e) 100 khz as a function of fluence. Fig. 5: Evolution of a) the full depletion bias and b) the leakage current as a function of pion fluence for silicon 3D detectors. 7 / 11
8 Tables Table 1: Summary of the strengths/weaknesses of the different fabrication processes. Process Dry Etching Laser Drilling PEC Etching Table 1 Rate 1-3 µm/min 3-5 sec/hole nm/min Aspect ratio Current Expected Sidewall Damage Comment 14:1 <26:1 YES Standard and reliable process. 25:1 <50:1 YES Independent of material. Costly and not easily scalable. 14:1 >100:1 NO Multi-step process. 8 / 11
9 ionising radiation -ve -ve -ve +ve -ve +ve n p + n + h + e - x 2D h + W 2D E e - x 3D +ve a) b) Fig. 1 W3D E a) b) c) Fig. 2 a) b) Fig. 3 9 / 11
10 a) b) c) d) e) Fig / 11
11 Fig. 5 a) b) 11 / 11
Department of Physics & Astronomy
Department of Physics & Astronomy Experimental Particle Physics Group Kelvin Building, University of Glasgow, Glasgow, G12 8QQ, Scotland Telephone: +44 (0)141 339 8855 Fax: +44 (0)141 330 5881 GLAS-PPE/2005-14
More informationSimulation and test of 3D silicon radiation detectors
Simulation and test of 3D silicon radiation detectors C.Fleta 1, D. Pennicard 1, R. Bates 1, C. Parkes 1, G. Pellegrini 2, M. Lozano 2, V. Wright 3, M. Boscardin 4, G.-F. Dalla Betta 4, C. Piemonte 4,
More informationPoS(EPS-HEP 2009)150. Silicon Detectors for the slhc - an Overview of Recent RD50 Results. Giulio Pellegrini 1. On behalf of CERN RD50 collaboration
Silicon Detectors for the slhc - an Overview of Recent RD50 Results 1 Centro Nacional de Microelectronica CNM- IMB-CSIC, Barcelona Spain E-mail: giulio.pellegrini@imb-cnm.csic.es On behalf of CERN RD50
More informationSimulation of new P-type strip detectors with trench to enhance the charge multiplication effect in the n- type electrodes
Simulation of new P-Type strip detectors RESMDD 10, Florence 12-15.October.2010 1/15 Simulation of new P-type strip detectors with trench to enhance the charge multiplication effect in the n- type electrodes
More informationSilicon Sensor Developments for the CMS Tracker Upgrade
Silicon Sensor Developments for the CMS Tracker Upgrade on behalf of the CMS tracker collaboration University of Hamburg, Germany E-mail: Joachim.Erfle@desy.de CMS started a campaign to identify the future
More informationDevelopment of Pixel Detectors for the Inner Tracker Upgrade of the ATLAS Experiment
Development of Pixel Detectors for the Inner Tracker Upgrade of the ATLAS Experiment Natascha Savić L. Bergbreiter, J. Breuer, A. Macchiolo, R. Nisius, S. Terzo IMPRS, Munich # 29.5.215 Franz Dinkelacker
More informationSilicon Sensors for High-Luminosity Trackers - RD50 Collaboration status report
Silicon Sensors for High-Luminosity Trackers - RD50 Collaboration status report Albert-Ludwigs-Universität Freiburg (DE) E-mail: susanne.kuehn@cern.ch The revised schedule for the Large Hadron Collider
More informationPixel sensors with different pitch layouts for ATLAS Phase-II upgrade
Pixel sensors with different pitch layouts for ATLAS Phase-II upgrade Different pitch layouts are considered for the pixel detector being designed for the ATLAS upgraded tracking system which will be operating
More informationMeasurements With Irradiated 3D Silicon Strip Detectors
Measurements With Irradiated 3D Silicon Strip Detectors Michael Köhler, Michael Breindl, Karls Jakobs, Ulrich Parzefall, Liv Wiik University of Freiburg Celeste Fleta, Manuel Lozano, Giulio Pellegrini
More informationWhy p-type is better than n-type? or Electric field in heavily irradiated silicon detectors
Why p-type is better than n-type? or Electric field in heavily irradiated silicon detectors G.Kramberger, V. Cindro, I. Mandić, M. Mikuž, M. Milovanović, M. Zavrtanik Jožef Stefan Institute Ljubljana,
More informationQuality Assurance for the ATLAS Pixel Sensor
Quality Assurance for the ATLAS Pixel Sensor 1st Workshop on Quality Assurance Issues in Silicon Detectors J. M. Klaiber-Lodewigs (Univ. Dortmund) for the ATLAS pixel collaboration Contents: - role of
More informationStrip Detectors. Principal: Silicon strip detector. Ingrid--MariaGregor,SemiconductorsasParticleDetectors. metallization (Al) p +--strips
Strip Detectors First detector devices using the lithographic capabilities of microelectronics First Silicon detectors -- > strip detectors Can be found in all high energy physics experiments of the last
More informationNovel Semi-3d Detector Structures for Improved Radiation Tolerance*
Novel Semi-3d Detector Structures for Improved Radiation Tolerance* Z. Li Brookhaven National Laboratory November 16, 2001 1st Workshop on Radiation hard semiconductor devices for very high luminosity
More informationATLAS Upgrade SSD. ATLAS Upgrade SSD. Specifications of Electrical Measurements on SSD. Specifications of Electrical Measurements on SSD
ATLAS Upgrade SSD Specifications of Electrical Measurements on SSD ATLAS Project Document No: Institute Document No. Created: 17/11/2006 Page: 1 of 7 DRAFT 2.0 Modified: Rev. No.: 2 ATLAS Upgrade SSD Specifications
More informationSTUDY OF THE RADIATION HARDNESS OF VCSEL AND PIN ARRAYS
STUDY OF THE RADIATION HARDNESS OF VCSEL AND PIN ARRAYS K.K. GAN, W. FERNANDO, H.P. KAGAN, R.D. KASS, A. LAW, A. RAU, D.S. SMITH Department of Physics, The Ohio State University, Columbus, OH 43210, USA
More informationThe HGTD: A SOI Power Diode for Timing Detection Applications
The HGTD: A SOI Power Diode for Timing Detection Applications Work done in the framework of RD50 Collaboration (CERN) M. Carulla, D. Flores, S. Hidalgo, D. Quirion, G. Pellegrini IMB-CNM (CSIC), Spain
More informationRecent Technological Developments on LGAD and ilgad Detectors for Tracking and Timing Applications
Recent Technological Developments on LGAD and ilgad Detectors for Tracking and Timing Applications G. Pellegrini 1, M. Baselga 1, M. Carulla 1, V. Fadeyev 2, P. Fernández-Martínez 1, M. Fernández García
More informationProperties of Irradiated CdTe Detectors O. Korchak M. Carna M. Havranek M. Marcisovsky L. Tomasek V. Vrba
E-mail: korchak@fzu.cz M. Carna E-mail: carna@fzu.cz M. Havranek E-mail: havram@fzu.cz M. Marcisovsky E-mail: marcisov@fzu.cz L. Tomasek E-mail: tamasekl@fzu.cz V. Vrba E-mail: vrba@fzu.cz Institute of
More informationProton induced leakage current in CCDs
Proton induced leakage current in CCDs David R. Smith* a, Andrew D. Holland a, Mark S. Robbins b, Richard M. Ambrosi a, Ian B. Hutchinson a a University of Leicester, Space Research Centre, University
More informationATLAS ITk and new pixel sensors technologies
IL NUOVO CIMENTO 39 C (2016) 258 DOI 10.1393/ncc/i2016-16258-1 Colloquia: IFAE 2015 ATLAS ITk and new pixel sensors technologies A. Gaudiello INFN, Sezione di Genova and Dipartimento di Fisica, Università
More informationFundamentals of Power Semiconductor Devices
В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device
More informationElectron Devices and Circuits (EC 8353)
Electron Devices and Circuits (EC 8353) Prepared by Ms.S.KARKUZHALI, A.P/EEE Diodes The diode is a 2-terminal device. A diode ideally conducts in only one direction. Diode Characteristics Conduction Region
More informationDesign and Simulation of N-Substrate Reverse Type Ingaasp/Inp Avalanche Photodiode
International Refereed Journal of Engineering and Science (IRJES) ISSN (Online) 2319-183X, (Print) 2319-1821 Volume 2, Issue 8 (August 2013), PP.34-39 Design and Simulation of N-Substrate Reverse Type
More informationUNIVERSITY of CALIFORNIA SANTA CRUZ
UNIVERSITY of CALIFORNIA SANTA CRUZ CHARACTERIZATION OF THE IRST PROTOTYPE P-TYPE SILICON STRIP SENSOR A thesis submitted in partial satisfaction of the requirements for the degree of BACHELOR OF SCIENCE
More informationSINPHOS SINGLE PHOTON SPECTROMETER FOR BIOMEDICAL APPLICATION
-LNS SINPHOS SINGLE PHOTON SPECTROMETER FOR BIOMEDICAL APPLICATION Salvatore Tudisco 9th Topical Seminar on Innovative Particle and Radiation Detectors 23-26 May 2004 Siena, Italy Delayed Luminescence
More informationA new Vertical JFET Technology for Harsh Radiation Applications
A New Vertical JFET Technology for Harsh Radiation Applications ISPS 2016 1 A new Vertical JFET Technology for Harsh Radiation Applications A Rad-Hard switch for the ATLAS Inner Tracker P. Fernández-Martínez,
More informationTitle detector with operating temperature.
Title Radiation measurements by a detector with operating temperature cryogen Kanno, Ikuo; Yoshihara, Fumiki; Nou Author(s) Osamu; Murase, Yasuhiro; Nakamura, Masaki Citation REVIEW OF SCIENTIFIC INSTRUMENTS
More informationChapter 1: Semiconductor Diodes
Chapter 1: Semiconductor Diodes Diodes The diode is a 2-terminal device. A diode ideally conducts in only one direction. 2 Diode Characteristics Conduction Region Non-Conduction Region The voltage across
More informationULTRA LOW CAPACITANCE SCHOTTKY DIODES FOR MIXER AND MULTIPLIER APPLICATIONS TO 400 GHZ
ULTRA LOW CAPACITANCE SCHOTTKY DIODES FOR MIXER AND MULTIPLIER APPLICATIONS TO 400 GHZ Byron Alderman, Hosh Sanghera, Leo Bamber, Bertrand Thomas, David Matheson Abstract Space Science and Technology Department,
More informationThe CMS Silicon Strip Tracker and its Electronic Readout
The CMS Silicon Strip Tracker and its Electronic Readout Markus Friedl Dissertation May 2001 M. Friedl The CMS Silicon Strip Tracker and its Electronic Readout 2 Introduction LHC Large Hadron Collider:
More informationLight Emitting Diodes
Light Emitting Diodes Topics covered in this presentation: LED operation LED Characteristics Display devices Protection and limiting 1 of 9 Light Emitting Diode - LED A special type of diode is the Light
More informationSimulation of High Resistivity (CMOS) Pixels
Simulation of High Resistivity (CMOS) Pixels Stefan Lauxtermann, Kadri Vural Sensor Creations Inc. AIDA-2020 CMOS Simulation Workshop May 13 th 2016 OUTLINE 1. Definition of High Resistivity Pixel Also
More informationPrototype Performance and Design of the ATLAS Pixel Sensor
Prototype Performance and Design of the ATLAS Pixel Sensor F. Hügging, for the ATLAS Pixel Collaboration Contents: - Introduction - Sensor Concept - Performance fi before and after irradiation - Conclusion
More informationUniversità degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.
Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo Colantonio A.A. 2015-16 Introduction: materials Conductors e.g. copper or aluminum have a cloud
More informationAVALANCHE PHOTODIODES FOR THE CMS ELECTROMAGNETIC CALORIMETER
AVALANCHE PHOTODIODES FOR THE CMS ELECTROMAGNETIC CALORIMETER B. Patel, R. Rusack, P. Vikas(email:Pratibha.Vikas@cern.ch) University of Minnesota, Minneapolis, U.S.A. Y. Musienko, S. Nicol, S.Reucroft,
More informationForward bias operation of irradiated silicon detectors A.Chilingarov Lancaster University, UK
1 st Workshop on Radiation hard semiconductor devices for very high luminosity colliders, CERN, 28-30 November 2001 Forward bias operation of irradiated silicon detectors A.Chilingarov Lancaster University,
More informationSilicon Detectors in High Energy Physics
Thomas Bergauer (HEPHY Vienna) IPM Teheran 22 May 2011 Sunday: Schedule Semiconductor Basics (45 ) Silicon Detectors in Detector concepts: Pixels and Strips (45 ) Coffee Break Strip Detector Performance
More informationThe upgrade of the ATLAS silicon strip tracker
On behalf of the ATLAS Collaboration IFIC - Instituto de Fisica Corpuscular (University of Valencia and CSIC), Edificio Institutos de Investigacion, Apartado de Correos 22085, E-46071 Valencia, Spain E-mail:
More informationThe LHCb Vertex Locator (VELO) Pixel Detector Upgrade
Home Search Collections Journals About Contact us My IOPscience The LHCb Vertex Locator (VELO) Pixel Detector Upgrade This content has been downloaded from IOPscience. Please scroll down to see the full
More informationirst: process development, characterization and first irradiation studies
3D D detectors at ITC-irst irst: process development, characterization and first irradiation studies S. Ronchin a, M. Boscardin a, L. Bosisio b, V. Cindro c, G.-F. Dalla Betta d, C. Piemonte a, A. Pozza
More informationNOVEL CHIP GEOMETRIES FOR THz SCHOTTKY DIODES
Page 404 NOVEL CHIP GEOMETRIES FOR THz SCHOTTKY DIODES W. M. Kelly, Farran Technology Ltd., Cork, Ireland S. Mackenzie and P. Maaskant, National Microelectronics Research Centre, University College, Cork,
More informationATLAS strip detector upgrade for the HL-LHC
ATL-INDET-PROC-2015-010 26 August 2015, On behalf of the ATLAS collaboration Santa Cruz Institute for Particle Physics, University of California, Santa Cruz E-mail: zhijun.liang@cern.ch Beginning in 2024,
More informationThe Architecture of the BTeV Pixel Readout Chip
The Architecture of the BTeV Pixel Readout Chip D.C. Christian, dcc@fnal.gov Fermilab, POBox 500 Batavia, IL 60510, USA 1 Introduction The most striking feature of BTeV, a dedicated b physics experiment
More informationPower MOSFET Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Power MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Evolution of low-voltage (
More informationSilicon sensors for radiant signals. D.Sc. Mikko A. Juntunen
Silicon sensors for radiant signals D.Sc. Mikko A. Juntunen 2017 01 16 Today s outline Introduction Basic physical principles PN junction revisited Applications Light Ionizing radiation X-Ray sensors in
More informationLecture 2. Part 2 (Semiconductor detectors =sensors + electronics) Segmented detectors with pn-junction. Strip/pixel detectors
Lecture 2 Part 1 (Electronics) Signal formation Readout electronics Noise Part 2 (Semiconductor detectors =sensors + electronics) Segmented detectors with pn-junction Strip/pixel detectors Drift detectors
More informationLAB V. LIGHT EMITTING DIODES
LAB V. LIGHT EMITTING DIODES 1. OBJECTIVE In this lab you are to measure I-V characteristics of Infrared (IR), Red and Blue light emitting diodes (LEDs). The emission intensity as a function of the diode
More informationCharacteristics of the ALICE Silicon Drift Detector.
Characteristics of the ALICE Silicon Drift Detector. A. Rashevsky b,1, V. Bonvicini b, P. Burger c, P. Cerello a, E. Crescio a, P. Giubellino a, R. Hernández-Montoya a,2, A. Kolojvari a,3, L.M. Montaño
More informationEvaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction Bipolar Transistors Under Radiation Exposure
1 Evaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction Bipolar Transistors Under Radiation Exposure J. Metcalfe, D. E. Dorfan, A. A. Grillo, A. Jones, F. Martinez-McKinney,
More informationA Low-Power, Radiation-Hard Gigabit Serializer for use in the CMS Electromagnetic Calorimeter
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 47, NO. 1, FEBRUARY 2000 13 A Low-Power, Radiation-Hard Gigabit Serializer for use in the CMS Electromagnetic Calorimeter P. Denes, S. Baier, Member, IEEE, J.-M.
More informationReg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester
WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES
More informationStudies on MCM D interconnections
Studies on MCM D interconnections Speaker: Peter Gerlach Department of Physics Bergische Universität Wuppertal D-42097 Wuppertal, GERMANY Authors: K.H.Becks, T.Flick, P.Gerlach, C.Grah, P.Mättig Department
More informationA NOVEL BIASED ANTI-PARALLEL SCHOTTKY DIODE STRUCTURE FOR SUBHARMONIC
Page 342 A NOVEL BIASED ANTI-PARALLEL SCHOTTKY DIODE STRUCTURE FOR SUBHARMONIC Trong-Huang Lee', Chen-Yu Chi", Jack R. East', Gabriel M. Rebeiz', and George I. Haddad" let Propulsion Laboratory California
More informationHighly Miniaturised Radiation Monitor (HMRM) Status Report. Yulia Bogdanova, Nicola Guerrini, Ben Marsh, Simon Woodward, Rain Irshad
Highly Miniaturised Radiation Monitor (HMRM) Status Report Yulia Bogdanova, Nicola Guerrini, Ben Marsh, Simon Woodward, Rain Irshad HMRM programme aim Aim of phase A/B: Develop a chip sized prototype radiation
More informationDevelopment of Integration-Type Silicon-On-Insulator Monolithic Pixel. Detectors by Using a Float Zone Silicon
Development of Integration-Type Silicon-On-Insulator Monolithic Pixel Detectors by Using a Float Zone Silicon S. Mitsui a*, Y. Arai b, T. Miyoshi b, A. Takeda c a Venture Business Laboratory, Organization
More informationDepartment of Physics & Astronomy. Kelvin Building, University of Glasgow,
Department of Physics & Astronomy Experimental Particle Physics Group Kelvin Building, University of Glasgow, Glasgow, G12 8QQ, Scotland Telephone: +44 (0)141 339 8855 Fax: +44 (0)141 334 9029 GLAS{PPE/95{06
More informationMonolithic Pixel Sensors in SOI technology R&D activities at LBNL
Monolithic Pixel Sensors in SOI technology R&D activities at LBNL Lawrence Berkeley National Laboratory M. Battaglia, L. Glesener (UC Berkeley & LBNL), D. Bisello, P. Giubilato (LBNL & INFN Padova), P.
More information64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array
64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array 69 64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array Roland Jäger and Christian Jung We have designed and fabricated
More informationCMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC
Prepared for submission to JINST The 11 th International Conference on Position Sensitive Detectors 3-8 September 2017 The Open University, Milton Keynes, UK. CMOS pixel sensor development for the ATLAS
More informationStudy of the radiation-hardness of VCSEL and PIN
Study of the radiation-hardness of VCSEL and PIN 1, W. Fernando, H.P. Kagan, R.D. Kass, H. Merritt, J.R. Moore, A. Nagarkara, D.S. Smith, M. Strang Department of Physics, The Ohio State University 191
More informationPoS(Vertex 2016)028. Small pitch 3D devices. Gian-Franco Dalla Betta 1, Roberto Mendicino, DMS Sultan
1, Roberto Mendicino, DMS Sultan University of Trento and TIFPA INFN Via Sommarive, 9 38123 Trento, Italy E-mail: gianfranco.dallabetta@unitn.it Maurizio Boscardin, Gabriele Giacomini 2, Sabina Ronchin,
More informationRole of guard rings in improving the performance of silicon detectors
PRAMANA c Indian Academy of Sciences Vol. 65, No. 2 journal of August 2005 physics pp. 259 272 Role of guard rings in improving the performance of silicon detectors VIJAY MISHRA, V D SRIVASTAVA and S K
More informationSensor production readiness
Sensor production readiness G. Bolla, Purdue University for the USCMS FPIX group PMG review 02/25/2005 2/23/2005 1 Outline Sensor requirements Geometry Radiation hardness Development Guard Rings P stops
More informationFabrication of High-Speed Resonant Cavity Enhanced Schottky Photodiodes
Fabrication of High-Speed Resonant Cavity Enhanced Schottky Photodiodes Abstract We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The
More informationMonolithic Pixel Development in 180 nm CMOS for the Outer Pixel Layers in the ATLAS Experiment
Monolithic Pixel Development in 180 nm CMOS for the Outer Pixel Layers in the ATLAS Experiment a, R. Bates c, C. Buttar c, I. Berdalovic a, B. Blochet a, R. Cardella a, M. Dalla d, N. Egidos Plaja a, T.
More informationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 55, NO. 5, OCTOBER /$ IEEE
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 55, NO. 5, OCTOBER 2008 2775 Double-Sided, Double-Type-Column 3-D Detectors: Design, Fabrication, and Technology Evaluation Andrea Zoboli, Student Member, IEEE,
More informationTransistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced.
Unit 1 Basic MOS Technology Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced. Levels of Integration:- i) SSI:-
More informationRadiation hardness of the 1550 nm edge emitting laser for the optical links of the CDF silicon tracker
Nuclear Instruments and Methods in Physics Research A 541 (25) 28 212 www.elsevier.com/locate/nima Radiation hardness of the 155 nm edge emitting laser for the optical links of the CDF silicon tracker
More informationIntegrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI
1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward
More informationCharacterisation of Hybrid Pixel Detectors with capacitive charge division
Characterisation of Hybrid Pixel Detectors with capacitive charge division M. Caccia 1, S.Borghi, R. Campagnolo,M. Battaglia, W. Kucewicz, H.Palka, A. Zalewska, K.Domanski, J.Marczewski, D.Tomaszewski
More informationTHE SILICON SENSOR FOR THE COMPACT MUON SOLENOID CONTROL OF THE FABRICATION PROCESS
THE SILICON SENSOR FOR THE COMPACT MUON SOLENOID CONTROL OF THE FABRICATION PROCESS F. MANOLESCU 1, A. MACCHIOLO 2, M. BRIANZI 2, A. MIHUL 3 1 Institute of Space Sciences, Magurele, Bucharest, Romania
More informationMarten Bosma 1, Alex Fauler 2, Michael Fiederle 2 en Jan Visser Nikhef, Amsterdam, The Netherlands 2. FMF, Freiburg, Germany
Marten Bosma 1, Alex Fauler 2, Michael Fiederle 2 en Jan Visser 1 1. Nikhef, Amsterdam, The Netherlands 2. FMF, Freiburg, Germany Digital Screen film Digital radiography advantages: Larger dynamic range
More information3084 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 60, NO. 4, AUGUST 2013
3084 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 60, NO. 4, AUGUST 2013 Dummy Gate-Assisted n-mosfet Layout for a Radiation-Tolerant Integrated Circuit Min Su Lee and Hee Chul Lee Abstract A dummy gate-assisted
More informationGallium nitride (GaN)
80 Technology focus: GaN power electronics Vertical, CMOS and dual-gate approaches to gallium nitride power electronics US research company HRL Laboratories has published a number of papers concerning
More informationSolid State Devices- Part- II. Module- IV
Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the
More informationDevelopment of Double-sided Silcon microstrip Detector. D.H. Kah*, H. Park, H.J. Kim (BAERI JikLee (SNU) E. Won (Korea U)
Development of Double-sided Silcon microstrip Detector D.H. Kah*, H. Park, H.J. Kim (BAERI JikLee (SNU) E. Won (Korea U), KNU) 2005 APPI dhkah@belle.knu.ac.kr 1 1. Motivation 2. Introduction Contents 1.
More informationarxiv: v2 [physics.ins-det] 15 Feb 2013
Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade arxiv:1212.3580v2 [physics.ins-det] 15 Feb 2013 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 M. Bomben a,, A. Bagolini b, M. Boscardin
More informationChromatic X-Ray imaging with a fine pitch CdTe sensor coupled to a large area photon counting pixel ASIC
Chromatic X-Ray imaging with a fine pitch CdTe sensor coupled to a large area photon counting pixel ASIC R. Bellazzini a,b, G. Spandre a*, A. Brez a, M. Minuti a, M. Pinchera a and P. Mozzo b a INFN Pisa
More informationProject 6 Capacitance of a PN Junction Diode
Project 6 Capacitance of a PN Junction Diode OVERVIEW: In this project, we will characterize the capacitance of a reverse-biased PN diode. We will see that this capacitance is voltage-dependent and we
More informationThe Discussion of this exercise covers the following points:
Exercise 1 The Diode EXERCISE OBJECTIVE When you have completed this exercise, you will be familiar with the operation of a diode. DISCUSSION OUTLINE The Discussion of this exercise covers the following
More informationSingle Sided and Double Sided Silicon MicroStrip Detector R&D
Single Sided and Double Sided Silicon MicroStrip Detector R&D Tariq Aziz Tata Institute, Mumbai, India SuperBelle, KEK December 10-12, 2008 Indian Effort Mask Design at TIFR, Processing at BEL Single Sided
More informationEvaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24GeV Proton Exposure
Santa Cruz Institute for Particle Physics Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24GeV Proton Exposure, D.E. Dorfan, A. A. Grillo, M Rogers, H. F.-W. Sadrozinski,
More informationAN INITIAL investigation into the effects of proton irradiation
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 2, FEBRUARY 2006 205 Proton Irradiation of EMCCDs David R. Smith, Richard Ingley, and Andrew D. Holland Abstract This paper describes the irradiation
More informationSilicon sensors for the LumiCal for the Very Forward Region
Report No. 1993/PH Silicon sensors for the LumiCal for the Very Forward Region J. Błocki, W. Daniluk, W. Dąbrowski 1, M. Gil, U. Harder 2, M. Idzik 1, E. Kielar, A. Moszczyński, K. Oliwa, B. Pawlik, L.
More informationX-ray Detectors: What are the Needs?
X-ray Detectors: What are the Needs? Sol M. Gruner Physics Dept. & Cornell High Energy Synchrotron Source (CHESS) Ithaca, NY 14853 smg26@cornell.edu 1 simplified view of the Evolution of Imaging Synchrotron
More informationproblem grade total
Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo Name: Recitation: November 16, 2005 Quiz #2 problem grade 1 2 3 4 total General guidelines (please read carefully before starting):
More informationSEU effects in registers and in a Dual-Ported Static RAM designed in a 0.25 µm CMOS technology for applications in the LHC
SEU effects in registers and in a Dual-Ported Static RAM designed in a 0.25 µm CMOS technology for applications in the LHC F.Faccio 1, K.Kloukinas 1, G.Magazzù 2, A.Marchioro 1 1 CERN, 1211 Geneva 23,
More informationLecture 18: Photodetectors
Lecture 18: Photodetectors Contents 1 Introduction 1 2 Photodetector principle 2 3 Photoconductor 4 4 Photodiodes 6 4.1 Heterojunction photodiode.................... 8 4.2 Metal-semiconductor photodiode................
More informationCopyright -International Centre for Diffraction Data 2010 ISSN
234 BRIDGING THE PRICE/PERFORMANCE GAP BETWEEN SILICON DRIFT AND SILICON PIN DIODE DETECTORS Derek Hullinger, Keith Decker, Jerry Smith, Chris Carter Moxtek, Inc. ABSTRACT Use of silicon drift detectors
More informationLecture - 19 Microwave Solid State Diode Oscillator and Amplifier
Basic Building Blocks of Microwave Engineering Prof. Amitabha Bhattacharya Department of Electronics and Communication Engineering Indian Institute of Technology, Kharagpur Lecture - 19 Microwave Solid
More informationNew fabrication and packaging technologies for CMOS pixel sensors: closing gap between hybrid and monolithic
New fabrication and packaging technologies for CMOS pixel sensors: closing gap between hybrid and monolithic Outline Short history of MAPS development at IPHC Results from TowerJazz CIS test sensor Ultra-thin
More informationVELO: the LHCb Vertex Detector
LHCb note 2002-026 VELO VELO: the LHCb Vertex Detector J. Libby on behalf of the LHCb collaboration CERN, Meyrin, Geneva 23, CH-1211, Switzerland Abstract The Vertex Locator (VELO) of the LHCb experiment
More informationLawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory
Lawrence Berkeley National Laboratory Lawrence Berkeley National Laboratory Title Using an Active Pixel Sensor In A Vertex Detector Permalink https://escholarship.org/uc/item/5w19x8sx Authors Matis, Howard
More informationLAB V. LIGHT EMITTING DIODES
LAB V. LIGHT EMITTING DIODES 1. OBJECTIVE In this lab you will measure the I-V characteristics of Infrared (IR), Red and Blue light emitting diodes (LEDs). Using a photodetector, the emission intensity
More information10 Gb/s Radiation-Hard VCSEL Array Driver
10 Gb/s Radiation-Hard VCSEL Array Driver K.K. Gan 1, H.P. Kagan, R.D. Kass, J.R. Moore, D.S. Smith Department of Physics The Ohio State University Columbus, OH 43210, USA E-mail: gan@mps.ohio-state.edu
More informationSchottky Diode RF-Detector and Focused Ion Beam Post-Processing MURI Annual Review
Schottky Diode RF-Detector and Focused Ion Beam Post-Processing MURI Annual Review Woochul Jeon, Todd Firestone, John Rodgers & John Melngailis University of Maryland. (consultations with Jake Baker Boise
More informationInstruction manual and data sheet ipca h
1/15 instruction manual ipca-21-05-1000-800-h Instruction manual and data sheet ipca-21-05-1000-800-h Broad area interdigital photoconductive THz antenna with microlens array and hyperhemispherical silicon
More informationSILICON p-i-n diodes are important devices for radiation
2066 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 57, NO. 4, AUGUST 2010 Prediction of the Response of the Commercial BPW34FS Silicon p-i-n Diode Used as Radiation Monitoring Sensors up to Very High Fluences
More informationGaN-based Schottky diodes for EUV/VUV/UV photodetection
1 GaN-based Schottky diodes for EUV/VUV/UV photodetection F. Shadi Shahedipour-Sandvik College of Nanoscale Science and Engineering University at Albany - SUNY, Albany NY 12203 cnse.albany.edu sshahedipour@uamail.albany.edu
More informationAIDA-2020 Advanced European Infrastructures for Detectors at Accelerators. Milestone Report
AIDA-2020-MS15 AIDA-2020 Advanced European Infrastructures for Detectors at Accelerators Milestone Report Design specifications of test stations for irradiated silicon sensors and LHC oriented front-end
More information