Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24GeV Proton Exposure
|
|
- Pierce Watkins
- 6 years ago
- Views:
Transcription
1 Santa Cruz Institute for Particle Physics Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24GeV Proton Exposure, D.E. Dorfan, A. A. Grillo, M Rogers, H. F.-W. Sadrozinski, A. Seiden, E. Spencer, M. Wilder, University of California Santa Cruz, 95064, USA A. Sutton,G. Prakash, J.D. Cressler Georgia Tech, Atlanta, GA , USA
2 Why SiGe? Advantages of SiGe Bipolar Over CMOS for Silicon Strip Detectors A key element in the design of low noise, fast shaping, charge amplifiers is high transconductance in the first stage. With CMOS technologies, this requires relatively larger bias currents than with bipolar technologies. The changes that make SiGe Bipolar technology operate at 100 GHz for the wireless industry coincide with the features that enhance performance in high energy particle physics applications. Small feature size increases radiation tolerance. Extremely small base resistance (of order Ω) affords low noise designs at very low bias currents. These design features are important for applications with: Large capacitive loads (e.g pf silicon strip detectors) Fast shaping times (e.g. accelerator experiments with beam crossing times of tens of nanoseconds in order to identify individual beam crossing events) 2
3 Challenges for ATLAS Upgrade Fluence [10 14 n eq /cm 2 ] Fluence for 2,500 fb -1 Inner Pixel Mid-Radius Short Strips Radius [cm] Outer-Radius SCT The LHC upgrade will increase the luminosity by a factor of 10! Fluences in the inner detector will reach as high as n eq /cm 2! The challenge is to find front-end electronics resistant to radiation damage that will also reduce power consumption with acceptable noise. Our efforts focus on fluences achieved in the mid to outer radii of silicon strip detectors. 3
4 Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) (First Generation IBM Process) Origin of radiation tolerance: Small active volume of the transistor Thin emitter-base spacer oxide (weakest spot) Irradiation Procedure: Devices were sent to CERN and exposed to a 24GeV proton source with the highest fluence taking 5 days to accumulate. The leads were grounded during irradiation -- > worst case scenario. The transistors were annealed to improve performance. Special thanks to the RD50 collaboration, especially, Michael Moll and Maurice Glaser. Device Sizes: 0.5x1 µm 2 0.5x2.5 µm 2 0.5x10 µm 2 0.5x20 µm 2 4x5 µm 2 4
5 The Effects of Proton Irradiation Pre-rad ATLAS Upgrade Outer Radius 4.15 x x x Mid Radius Inner Radius 1.34 x x x
6 Radiation Damage Mechanisms Radiation damage increases base current causing the gain of the device to degrade. Gain=I c /I b (collector current/base current) Plot for 0.5 mm x mm: Forward Gummel Plot for 0.5x2.5 µm 2 IC, IB vs. VB pre-rad and after 1*10 15 p/cm 2 + anneal I c,i b vs. V be Pre-rad and After 1x10 15 p/cm 2 & Anneal Steps I c, I b [A] IC (pre-rad) IB (pre-rad) IC (1e15, anneal) IB (1e15, anneal) V be VB [V] Collector current remains the same Base current increases after irradiation Ionization Damage (in the spacer oxide layers) The charged nature of the particle creates oxide trapped charges and interface states in the emitter-base spacer increasing the base current. Displacement Damage (in the oxide and bulk) The incident mass of the particle knocks out atoms in the lattice structure shortening hole lifetime, which is inversely proportional to the base current. 6
7 Annealing Effects Before Irradiation After Irradiation & Full Annealing Annealing of 0.5x2.5 µm 2 : Current Gain, β, vs. I c Annealing of 0.5 um x 2.5 um: Current Gain beta vs. Ic Pre-rad pre-rad and after After 1*10 1x10 15 p/cm 15 p/cm 2 and 2 & anneal Anneal steps Steps Current Gain, β IC [A] I c [A] After Irradiation pre-rad 1e15, no anneal 1e15, 5 days RT 1e15, +6 days RT+1 day 60deg C 1e15, +1 day 100deg C 1e15, +6 days 100deg C We studied the effects of annealing. The performance improves appreciably. In the case above, the gain is now over 50 at 10µA entering into the region where an efficient chip design may be implemented with this technology. The annealing effects are expected to be sensitive to the biasing conditions. We plan to study this in the future. 7
8 Initial Results: Before Irradiation Lowest Fluence Current Gain Gain, beta vs. β, vs. Ic for I c 0.5 for um 0.5x10 x 10um µm 2 Pre-rad pre-rad and and for All all Fluences including Including full Full annealing Annealing Current Gain, β Pre-rad 3e13 1e14 3e14 1e15 3e15 1e16 Increasing Fluence Highest Fluence I IC c [A] After irradiation, the gain decreases as the fluence level increases. Performance is still very good at a fluence level of 1x10 15 p/cm 2. A typical I c for transistor operation might be around 10 µa where a β of around 50 is required for a chip design. At 3x10 15, operation is still acceptable for certain applications. 8
9 Universality of Results: 1/β(final) - 1/β(initial) Delta(1/beta) post-rad+anneal to Jc = 10 ua um x 1 um 0.5 um x 2.5 um 0.5 um x 10 um 0.5 um x 20 um 4 um x 5um (1/β) Post-rad & Anneal to J c =10µA Ratio β(final)/β(initial) Ratio of Current Gain beta post-rad+anneal to Jc = 10 ua Ratio of Current Gain, β Post-rad & Anneal to J c =10 µa 0.5 um x 1 um 0.5 um x 2.5 um 0.5 um x 10 um 0.5 um x 20 um 4 um x 5um Proton Fluence F [p/cm 2 ] ] Proton Fluence F [p/cm 2 ] Proton Fluence [p/cm 2 ] Universal behavior independent of transistor geometry when compared at the same current density J c. For a given current density (1/β) scales linearly with the log of the fluence. This precise relation allows the gain after irradiation to be predicted for other SiGe HBTs. Note there is little dependence on the initial gain value. 9
10 Feasibility for ATLAS Inner Detector Upgrade Qualifications for a good transistor: A gain of 50 is a good figure of merit for a transistor to use in a front-end circuit design. Low currents translate into increased power savings. Fluence: 3.50E14 p/cm 2 (2.17x10 14 n eq /cm 2 ) β=50 Transistor Size µm 2 Ι c irrad I c anneal 0.5x1 2.E x2.5 4.E-06 5.E x10 3.E-05 8.E x20 5.E-05 2.E-06 4x5 9.E-06 5.E-07 At 3.5x10 14 in the outer region (60 cm), where long (10 cm) silicon strip detectors with capacitances around 15pF will be used, the collector current I c is low enough for substantial power savings over CMOS! Fluence: 1.34E15 p/cm 2 (8.32x10 14 n eq /cm 2 ) β=50 Transistor Size µm 2 Ι c irrad I c anneal 0.5x1 3.E-05 1.E x2.5 7.E-05 4.E x10 4.E-04 9.E x20 6.E-05 4x5 1.E-04 1.E-05 At 1.34x10 15 closer to the mid radius (20 cm), where short (3 cm) silicon strip detectors with capacitance around 5pF will be used, the collector current I c is still good for a front transistor, which requires a larger current while minimizing noise. We expect better results from 3rd generation IBM SiGe HBTs. 10
11 Conclusions We extended the radiation testing of SiGe Bipolar transistors by a factor 100 in fluence thanks to the RD50 radiation program. The 5HP technology we examined is far superior to that used for the current ATLAS silicon strip detectors. The 5HP demonstrates utility--power savings and low noise--for the entire analog front-end in the outer region and for the front transistor in the mid radius of ATLAS Upgrade. Future generations (smaller sizes) of SiGe HBTs show huge potential for power savings with low noise at extreme radiation levels. Investigation is currently under way to determine the benefits of the next generations of SiGe HBTs in future collider experiments (i.e. slhc). 11
Signal-to. to-noise with SiGe. 7 th RD50 Workshop CERN. Hartmut F.-W. Sadrozinski. SCIPP UC Santa Cruz. Signal-to-Noise, SiGe 1
Signal-to to-noise with SiGe 7 th RD50 Workshop CERN SCIPP UC Santa Cruz Signal-to-Noise, SiGe 1 Technical (Practical) Issues The ATLAS-ID upgrade will put large constraints on power. Can we meet power
More informationEvaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction Bipolar Transistors Under Radiation Exposure
1 Evaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction Bipolar Transistors Under Radiation Exposure J. Metcalfe, D. E. Dorfan, A. A. Grillo, A. Jones, F. Martinez-McKinney,
More informationATLAS Upgrade SSD. ATLAS Upgrade SSD. Specifications of Electrical Measurements on SSD. Specifications of Electrical Measurements on SSD
ATLAS Upgrade SSD Specifications of Electrical Measurements on SSD ATLAS Project Document No: Institute Document No. Created: 17/11/2006 Page: 1 of 7 DRAFT 2.0 Modified: Rev. No.: 2 ATLAS Upgrade SSD Specifications
More informationSTUDY OF THE RADIATION HARDNESS OF VCSEL AND PIN ARRAYS
STUDY OF THE RADIATION HARDNESS OF VCSEL AND PIN ARRAYS K.K. GAN, W. FERNANDO, H.P. KAGAN, R.D. KASS, A. LAW, A. RAU, D.S. SMITH Department of Physics, The Ohio State University, Columbus, OH 43210, USA
More informationStudy of the radiation-hardness of VCSEL and PIN
Study of the radiation-hardness of VCSEL and PIN 1, W. Fernando, H.P. Kagan, R.D. Kass, H. Merritt, J.R. Moore, A. Nagarkara, D.S. Smith, M. Strang Department of Physics, The Ohio State University 191
More informationATLAS ITk and new pixel sensors technologies
IL NUOVO CIMENTO 39 C (2016) 258 DOI 10.1393/ncc/i2016-16258-1 Colloquia: IFAE 2015 ATLAS ITk and new pixel sensors technologies A. Gaudiello INFN, Sezione di Genova and Dipartimento di Fisica, Università
More information1. Reasons for using p-type SSD
SCIPP 05/09 Operation of Short-Strip Silicon Detectors based on p-type Wafers in the ATLAS Upgrade ID Hartmut F.-W. Sadrozinski, Abraham Seiden SCIPP, UC Santa Cruz, CA 95064 Mara Bruzzi INFN Firenze -
More informationRadiation-hard/high-speed data transmission using optical links
Radiation-hard/high-speed data transmission using optical links K.K. Gan a, B. Abi c, W. Fernando a, H.P. Kagan a, R.D. Kass a, M.R.M. Lebbai b, J.R. Moore a, F. Rizatdinova c, P.L. Skubic b, D.S. Smith
More informationPoS(EPS-HEP 2009)150. Silicon Detectors for the slhc - an Overview of Recent RD50 Results. Giulio Pellegrini 1. On behalf of CERN RD50 collaboration
Silicon Detectors for the slhc - an Overview of Recent RD50 Results 1 Centro Nacional de Microelectronica CNM- IMB-CSIC, Barcelona Spain E-mail: giulio.pellegrini@imb-cnm.csic.es On behalf of CERN RD50
More informationSSD Development for the ATLAS Upgrade Tracker
SSD Development for the ATLAS Upgrade Tracker Meeting Mo., Feb. 26, 2007. 2-6 pm; CERN Rm. 13-3-005 ATL-P-MN-0006 v.1 Development of non-inverting Silicon strip detectors for the ATLAS ID Upgrade 1) DC
More informationCMS Tracker Upgrade for HL-LHC Sensors R&D. Hadi Behnamian, IPM On behalf of CMS Tracker Collaboration
CMS Tracker Upgrade for HL-LHC Sensors R&D Hadi Behnamian, IPM On behalf of CMS Tracker Collaboration Outline HL-LHC Tracker Upgrade: Motivations and requirements Silicon strip R&D: * Materials with Multi-Geometric
More informationTracking Detectors for the LHC Upgrade
Tracking Detectors for the LHC Upgrade Layout Signal Noise Hartmut F.-W. Sadrozinski SCIPP, UC Santa Cruz 1 slhc, the Machine Albert De Roeck CERN 626 Upgrade in 3 main Phases: Phase 0 maximum performance
More informationATLAS strip detector upgrade for the HL-LHC
ATL-INDET-PROC-2015-010 26 August 2015, On behalf of the ATLAS collaboration Santa Cruz Institute for Particle Physics, University of California, Santa Cruz E-mail: zhijun.liang@cern.ch Beginning in 2024,
More informationDevelopment of Pixel Detectors for the Inner Tracker Upgrade of the ATLAS Experiment
Development of Pixel Detectors for the Inner Tracker Upgrade of the ATLAS Experiment Natascha Savić L. Bergbreiter, J. Breuer, A. Macchiolo, R. Nisius, S. Terzo IMPRS, Munich # 29.5.215 Franz Dinkelacker
More informationSimulation of High Resistivity (CMOS) Pixels
Simulation of High Resistivity (CMOS) Pixels Stefan Lauxtermann, Kadri Vural Sensor Creations Inc. AIDA-2020 CMOS Simulation Workshop May 13 th 2016 OUTLINE 1. Definition of High Resistivity Pixel Also
More informationMeasurements With Irradiated 3D Silicon Strip Detectors
Measurements With Irradiated 3D Silicon Strip Detectors Michael Köhler, Michael Breindl, Karls Jakobs, Ulrich Parzefall, Liv Wiik University of Freiburg Celeste Fleta, Manuel Lozano, Giulio Pellegrini
More informationA new strips tracker for the upgraded ATLAS ITk detector
A new strips tracker for the upgraded ATLAS ITk detector, on behalf of the ATLAS Collaboration : 11th International Conference on Position Sensitive Detectors 3-7 The Open University, Milton Keynes, UK.
More informationATLAS Upgrade SSD Project:
ATLAS Upgrade SSD: Specifications of the ATLAS Upgrade SSD ATLAS Project Document No: Institute Document No. Created: 30/10/2006 Page: 1 of 7 DRAFT 1.0 Modified: ATLAS Upgrade SSD Project: Specifications
More informationThe CMS Silicon Strip Tracker and its Electronic Readout
The CMS Silicon Strip Tracker and its Electronic Readout Markus Friedl Dissertation May 2001 M. Friedl The CMS Silicon Strip Tracker and its Electronic Readout 2 Introduction LHC Large Hadron Collider:
More information31th March 2017, Annual ILC detector meeting Tohoku University Shunsuke Murai on behalf of FPCCD group
31th March 2017, Annual ILC detector meeting Tohoku University Shunsuke Murai on behalf of FPCCD group 1 Introduction Vertex detector FPCCD Radiation damage Neutron irradiation test Measurement of performance
More informationWhy p-type is better than n-type? or Electric field in heavily irradiated silicon detectors
Why p-type is better than n-type? or Electric field in heavily irradiated silicon detectors G.Kramberger, V. Cindro, I. Mandić, M. Mikuž, M. Milovanović, M. Zavrtanik Jožef Stefan Institute Ljubljana,
More informationTHE DEVELOPEMENT OF THE CAFE-P/CAFE-M BIPOLAR CHIPS FOR THE ATLAS SEMICONDUCTOR TRACKER
THE DEVELOPEMENT OF THE CAFE-P/CAFE-M BIPOLAR CHIPS FOR THE ATLAS SEMICONDUCTOR TRACKER T. Dubbs, (email: Dubbs@SCIPP.ucsc.edu), D. Dorfan, A. Grillo, E. Spencer, A. Seiden, M. Ullan Institute For Particle
More informationTracking Detectors for the slhc, the LHC Upgrade. Hartmut F.W. Sadrozinski SCIPP, UC Santa Cruz
Tracking Detectors for the slhc, the LHC Upgrade Hartmut F.W. Sadrozinski SCIPP, UC Santa Cruz 1 slhc, the Machine Albert De Roeck CERN 626 Upgrade in 3 main Phases: Phase 0 maximum performance without
More informationPixel sensors with different pitch layouts for ATLAS Phase-II upgrade
Pixel sensors with different pitch layouts for ATLAS Phase-II upgrade Different pitch layouts are considered for the pixel detector being designed for the ATLAS upgraded tracking system which will be operating
More informationSilicon Sensor Developments for the CMS Tracker Upgrade
Silicon Sensor Developments for the CMS Tracker Upgrade on behalf of the CMS tracker collaboration University of Hamburg, Germany E-mail: Joachim.Erfle@desy.de CMS started a campaign to identify the future
More informationSilicon Sensor and Detector Developments for the CMS Tracker Upgrade
Silicon Sensor and Detector Developments for the CMS Tracker Upgrade Università degli Studi di Firenze and INFN Sezione di Firenze E-mail: candi@fi.infn.it CMS has started a campaign to identify the future
More informationF. Hartmann. IEKP - Universität Karlsruhe (TH) IEKP - Universität Karlsruhe (TH)
Results on proton irradiation tests in Karlsruhe p do Bulk & Surface Damage Strip parameters after irrad. V FD for (300µm) and 500µm sensors after 10 years LHC Expectedpower for500 µm sensors after 10
More informationUpgrade of the CMS Tracker for the High Luminosity LHC
Upgrade of the CMS Tracker for the High Luminosity LHC * CERN E-mail: georg.auzinger@cern.ch The LHC machine is planning an upgrade program which will smoothly bring the luminosity to about 5 10 34 cm
More informationSILICON-GERMANIUM BICMOS DEVICE AND CIRCUIT DESIGN FOR EXTREME ENVIRONMENT APPLICATIONS
SILICON-GERMANIUM BICMOS DEVICE AND CIRCUIT DESIGN FOR EXTREME ENVIRONMENT APPLICATIONS A Thesis Presented to The Academic Faculty by Ryan M. Diestelhorst In Partial Fulfillment of the Requirements for
More informationWhat do the experiments want?
What do the experiments want? prepared by N. Hessey, J. Nash, M.Nessi, W.Rieger, W. Witzeling LHC Performance Workshop, Session 9 -Chamonix 2010 slhcas a luminosity upgrade The physics potential will be
More informationThe upgrade of the ATLAS silicon strip tracker
On behalf of the ATLAS Collaboration IFIC - Instituto de Fisica Corpuscular (University of Valencia and CSIC), Edificio Institutos de Investigacion, Apartado de Correos 22085, E-46071 Valencia, Spain E-mail:
More informationUNIVERSITY of CALIFORNIA SANTA CRUZ
UNIVERSITY of CALIFORNIA SANTA CRUZ CHARACTERIZATION OF THE IRST PROTOTYPE P-TYPE SILICON STRIP SENSOR A thesis submitted in partial satisfaction of the requirements for the degree of BACHELOR OF SCIENCE
More informationStatus of ATLAS & CMS Experiments
Status of ATLAS & CMS Experiments Atlas S.C. Magnet system Large Air-Core Toroids for µ Tracking 2Tesla Solenoid for inner Tracking (7*2.5m) ECAL & HCAL outside Solenoid Solenoid integrated in ECAL Barrel
More informationRadiation-Hard Optical Link for SLHC
Radiation-Hard Optical Link for SLHC W. Fernando, K.K. Gan, A. Law, H.P. Kagan, R.D. Kass, A. Rau, S. Smith The Ohio State University M.R.M. Lebbai, P.L. Skubic University of Oklahoma B. Abi, F. Rizatdinova
More informationUFSD: Ultra-Fast Silicon Detector
UFSD: Ultra-Fast Silicon Detector Basic goals of UFSD A parameterization of time resolution State of the art How to do better Overview of the sensor design First Results Nicolo Cartiglia with M. Baselga,
More informationSilicon Sensors for High-Luminosity Trackers - RD50 Collaboration status report
Silicon Sensors for High-Luminosity Trackers - RD50 Collaboration status report Albert-Ludwigs-Universität Freiburg (DE) E-mail: susanne.kuehn@cern.ch The revised schedule for the Large Hadron Collider
More informationChapter 3 Bipolar Junction Transistors (BJT)
Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,
More informationResults of FE65-P2 Pixel Readout Test Chip for High Luminosity LHC Upgrades
for High Luminosity LHC Upgrades R. Carney, K. Dunne, *, D. Gnani, T. Heim, V. Wallangen Lawrence Berkeley National Lab., Berkeley, USA e-mail: mgarcia-sciveres@lbl.gov A. Mekkaoui Fermilab, Batavia, USA
More informationA New SiGe Base Lateral PNM Schottky Collector. Bipolar Transistor on SOI for Non Saturating. VLSI Logic Design
A ew SiGe Base Lateral PM Schottky Collector Bipolar Transistor on SOI for on Saturating VLSI Logic Design Abstract A novel bipolar transistor structure, namely, SiGe base lateral PM Schottky collector
More informationStrip Detectors. Principal: Silicon strip detector. Ingrid--MariaGregor,SemiconductorsasParticleDetectors. metallization (Al) p +--strips
Strip Detectors First detector devices using the lithographic capabilities of microelectronics First Silicon detectors -- > strip detectors Can be found in all high energy physics experiments of the last
More informationFrank.Hartmann@CERN.CH 03.02.2012 Content & Disclaimer Different Strategies FLUKA Leakage currents Depletion Voltage Each experiment is following the same goal but with slightly different strategies An
More informationPhase 1 upgrade of the CMS pixel detector
Phase 1 upgrade of the CMS pixel detector, INFN & University of Perugia, On behalf of the CMS Collaboration. IPRD conference, Siena, Italy. Oct 05, 2016 1 Outline The performance of the present CMS pixel
More informationA new Vertical JFET Technology for Harsh Radiation Applications
A New Vertical JFET Technology for Harsh Radiation Applications ISPS 2016 1 A new Vertical JFET Technology for Harsh Radiation Applications A Rad-Hard switch for the ATLAS Inner Tracker P. Fernández-Martínez,
More informationRadiation-hard ASICs for Optical Data Transmission in the ATLAS Pixel Detector
Radiation-hard ASICs for Optical Data Transmission in the ATLAS Pixel Detector P. D. Jackson 1, K.E. Arms, K.K. Gan, M. Johnson, H. Kagan, A. Rahimi, C. Rush, S. Smith, R. Ter-Antonian, M.M. Zoeller Department
More informationUFSD: Ultra-Fast Silicon Detector
UFSD: Ultra-Fast Silicon Detector Basic goals of UFSD (aka Low-Gain Avalanche Diode) A parameterization of time resolution State of the art How to do better Overview of the sensor design Example of application
More informationMonolithic Pixel Sensors in SOI technology R&D activities at LBNL
Monolithic Pixel Sensors in SOI technology R&D activities at LBNL Lawrence Berkeley National Laboratory M. Battaglia, L. Glesener (UC Berkeley & LBNL), D. Bisello, P. Giubilato (LBNL & INFN Padova), P.
More informationWhat is it? Why SLHC? What s the challenge? Can we do it? How will the tracker look like?
Silicon Trackers for the Super-LHC System design and overview Marc Weber, Rutherford Appleton Laboratory What is it? Why SLHC? What s the challenge? Can we do it? How will the tracker look like? 10 th
More informationPrototype Performance and Design of the ATLAS Pixel Sensor
Prototype Performance and Design of the ATLAS Pixel Sensor F. Hügging, for the ATLAS Pixel Collaboration Contents: - Introduction - Sensor Concept - Performance fi before and after irradiation - Conclusion
More informationLeakage Current Prediction for GLAST Silicon Detectors
SCIPP 97/16 Leakage Current Prediction for GLAST Silicon Detectors T. Dubbs, H.F.-W Sadrozinski, S. Kashigan, W. Kroeger, S. Jaggar, R.Johnson, W. Rowe, A. Webster SCIPP, University of California Santa
More information3084 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 60, NO. 4, AUGUST 2013
3084 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 60, NO. 4, AUGUST 2013 Dummy Gate-Assisted n-mosfet Layout for a Radiation-Tolerant Integrated Circuit Min Su Lee and Hee Chul Lee Abstract A dummy gate-assisted
More informationPoS(EPS-HEP2017)476. The CMS Tracker upgrade for HL-LHC. Sudha Ahuja on behalf of the CMS Collaboration
UNESP - Universidade Estadual Paulista (BR) E-mail: sudha.ahuja@cern.ch he LHC machine is planning an upgrade program which will smoothly bring the luminosity to about 5 34 cm s in 228, to possibly reach
More informationDesign and Test of a 65nm CMOS Front-End with Zero Dead Time for Next Generation Pixel Detectors
Design and Test of a 65nm CMOS Front-End with Zero Dead Time for Next Generation Pixel Detectors L. Gaioni a,c, D. Braga d, D. Christian d, G. Deptuch d, F. Fahim d,b. Nodari e, L. Ratti b,c, V. Re a,c,
More information10 Gb/s Radiation-Hard VCSEL Array Driver
10 Gb/s Radiation-Hard VCSEL Array Driver K.K. Gan 1, H.P. Kagan, R.D. Kass, J.R. Moore, D.S. Smith Department of Physics The Ohio State University Columbus, OH 43210, USA E-mail: gan@mps.ohio-state.edu
More informationTechnology Overview. MM-Wave SiGe IC Design
Sheet Code RFi0606 Technology Overview MM-Wave SiGe IC Design Increasing consumer demand for high data-rate wireless applications has resulted in development activity to exploit the mm-wave frequency range
More informationAVALANCHE PHOTODIODES FOR THE CMS ELECTROMAGNETIC CALORIMETER
AVALANCHE PHOTODIODES FOR THE CMS ELECTROMAGNETIC CALORIMETER B. Patel, R. Rusack, P. Vikas(email:Pratibha.Vikas@cern.ch) University of Minnesota, Minneapolis, U.S.A. Y. Musienko, S. Nicol, S.Reucroft,
More informationLayout and prototyping of the new ATLAS Inner Tracker for the High Luminosity LHC
Layout and prototyping of the new ATLAS Inner Tracker for the High Luminosity LHC Ankush Mitra, University of Warwick, UK on behalf of the ATLAS ITk Collaboration PSD11 : The 11th International Conference
More informationPrimer on Detectors and Electronics for Particle Physics Experiments
1 Primer on Detectors and Electronics for Particle Physics Experiments Alexander A. Grillo Santa Cruz Institute for Particle Physics University of California Santa Cruz 19-Jul-14 Abstract This primer is
More informationReview Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination
Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Current Transport: Diffusion, Thermionic Emission & Tunneling For Diffusion current, the depletion layer is
More informationATLAS Phase-II Upgrade Pixel Data Transmission Development
ATLAS Phase-II Upgrade Pixel Data Transmission Development, on behalf of the ATLAS ITk project Physics Department and Santa Cruz Institute for Particle Physics, University of California, Santa Cruz 95064
More informationPoS(LHCP2018)031. ATLAS Forward Proton Detector
. Institut de Física d Altes Energies (IFAE) Barcelona Edifici CN UAB Campus, 08193 Bellaterra (Barcelona), Spain E-mail: cgrieco@ifae.es The purpose of the ATLAS Forward Proton (AFP) detector is to measure
More informationForward bias operation of irradiated silicon detectors A.Chilingarov Lancaster University, UK
1 st Workshop on Radiation hard semiconductor devices for very high luminosity colliders, CERN, 28-30 November 2001 Forward bias operation of irradiated silicon detectors A.Chilingarov Lancaster University,
More informationOPTICAL LINK OF THE ATLAS PIXEL DETECTOR
OPTICAL LINK OF THE ATLAS PIXEL DETECTOR K.K. Gan, W. Fernando, P.D. Jackson, M. Johnson, H. Kagan, A. Rahimi, R. Kass, S. Smith Department of Physics, The Ohio State University, Columbus, OH 43210, USA
More informationFast CMOS Transimpedance Amplifier and Comparator circuit for readout of silicon strip detectors at LHC experiments
Fast CMOS Transimpedance Amplifier and Comparator circuit for readout of silicon strip detectors at LHC experiments Jan Kaplon - CERN Wladek Dabrowski - FPN/UMM Cracow Pepe Bernabeu IFIC Valencia Carlos
More informationRadiation Test Report Paul Scherer Institute Proton Irradiation Facility
the Large Hadron Collider project CERN CH-2 Geneva 23 Switzerland CERN Div./Group RadWG EDMS Document No. xxxxx Radiation Test Report Paul Scherer Institute Proton Irradiation Facility Responsibility Tested
More informationDesign and characterization of the monolithic matrices of the H35DEMO chip
Design and characterization of the monolithic matrices of the H35DEMO chip Raimon Casanova 1,a Institut de Física d Altes Energies (IFAE), The Barcelona Institute of Science and Technology (BIST) Edifici
More informationAIDA-2020 Advanced European Infrastructures for Detectors at Accelerators. Milestone Report
AIDA-2020-MS15 AIDA-2020 Advanced European Infrastructures for Detectors at Accelerators Milestone Report Design specifications of test stations for irradiated silicon sensors and LHC oriented front-end
More informationThin Silicon R&D for LC applications
Thin Silicon R&D for LC applications D. Bortoletto Purdue University Status report Hybrid Pixel Detectors for LC Next Linear Collider:Physic requirements Vertexing 10 µ mgev σ r φ,z(ip ) 5µ m 3 / 2 p sin
More informationTest results on 60 MeV proton beam at CYCLONE - UCL Performed on CAEN HV prototype module A June 2001 Introduction
Test results on 60 MeV proton beam at CYCLONE - UCL Performed on CAEN HV prototype module A877 27-28 June 2001 (M. De Giorgi, M. Verlato INFN Padova, G. Passuello CAEN spa) Introduction The test performed
More informationPHYSICS OF SEMICONDUCTOR DEVICES
PHYSICS OF SEMICONDUCTOR DEVICES PHYSICS OF SEMICONDUCTOR DEVICES by J. P. Colinge Department of Electrical and Computer Engineering University of California, Davis C. A. Colinge Department of Electrical
More informationESE319 Introduction to Microelectronics BJT Intro and Large Signal Model
BJT Intro and Large Signal Model 1 VLSI Chip Manufacturing Process 2 0.35 mm SiGe BiCMOS Layout for RF (3.5 GHz) Two-Stage Power Amplifier Each transistor above is realized as net of four heterojunction
More informationThe CMS Pixel Detector Upgrade and R&D Developments for the High Luminosity LHC
The CMS Pixel Detector Upgrade and R&D Developments for the High Luminosity LHC On behalf of the CMS Collaboration INFN Florence (Italy) 11th 15th September 2017 Las Caldas, Asturias (Spain) High Luminosity
More informationThe ATLAS tracker Pixel detector for HL-LHC
on behalf of the ATLAS Collaboration INFN Genova E-mail: Claudia.Gemme@ge.infn.it The high luminosity upgrade of the LHC (HL-LHC) in 2026 will provide new challenges to the ATLAS tracker. The current Inner
More informationTowards a 10 μs, thin high resolution pixelated CMOS sensor system for future vertex detectors
Towards a 10 μs, thin high resolution pixelated CMOS sensor system for future vertex detectors Rita De Masi IPHC-Strasbourg On behalf of the IPHC-IRFU collaboration Physics motivations. Principle of operation
More informationThe Compact Muon Solenoid Experiment. Conference Report. Mailing address: CMS CERN, CH-1211 GENEVA 23, Switzerland
Available on CMS information server CMS CR -2015/213 The Compact Muon Solenoid Experiment Conference Report Mailing address: CMS CERN, CH-1211 GENEVA 23, Switzerland 05 October 2015 (v2, 12 October 2015)
More informationMuon detection in security applications and monolithic active pixel sensors
Muon detection in security applications and monolithic active pixel sensors Tracking in particle physics Gaseous detectors Silicon strips Silicon pixels Monolithic active pixel sensors Cosmic Muon tomography
More informationUV/EUV CONTINUOUS POSITION SENSOR
UV/EUV CONTINUOUS POSITION SENSOR ODD-SXUV-DLPSD FEATURES Submicron position resolution Stable response after exposure to UV/EUV 5 mm x 5 mm active area TO-8 windowless package RoHS ELECTRO-OPTICAL CHARACTERISTICS
More informationTemperature and Total Ionizing Dose Characterization of a Voltage Reference in a 180 nm CMOS Technology. Kevin Joseph Shetler
Temperature and Total Ionizing Dose Characterization of a Voltage Reference in a 180 nm CMOS Technology By Kevin Joseph Shetler Thesis Submitted to the Faculty of the Graduate School of Vanderbilt University
More informationDevelopment of Double-sided Silcon microstrip Detector. D.H. Kah*, H. Park, H.J. Kim (BAERI JikLee (SNU) E. Won (Korea U)
Development of Double-sided Silcon microstrip Detector D.H. Kah*, H. Park, H.J. Kim (BAERI JikLee (SNU) E. Won (Korea U), KNU) 2005 APPI dhkah@belle.knu.ac.kr 1 1. Motivation 2. Introduction Contents 1.
More informationVELO: the LHCb Vertex Detector
LHCb note 2002-026 VELO VELO: the LHCb Vertex Detector J. Libby on behalf of the LHCb collaboration CERN, Meyrin, Geneva 23, CH-1211, Switzerland Abstract The Vertex Locator (VELO) of the LHCb experiment
More informationCMS Tracker studies. Daniel Pitzl, DESY
CMS Tracker studies Daniel Pitzl, DESY Present CMS silicon tracker Design Material budget Upgrade phase I: 4 layer pixel 5 layer pixel? Resolution studies with broken line fits CMS Si Tracker 2 Phase I
More informationCMS Phase II Tracker Upgrade GRK-Workshop in Bad Liebenzell
CMS Phase II Tracker Upgrade GRK-Workshop in Bad Liebenzell Institut für Experimentelle Kernphysik KIT University of the State of Baden-Wuerttemberg and National Research Center of the Helmholtz Association
More informationPoS(Vertex 2016)071. The LHCb VELO for Phase 1 Upgrade. Cameron Dean, on behalf of the LHCb Collaboration
The LHCb VELO for Phase 1 Upgrade, on behalf of the LHCb Collaboration University of Glasgow E-mail: cameron.dean@cern.ch Large Hadron Collider beauty (LHCb) is a dedicated experiment for studying b and
More informationTCAD simulations of silicon strip and pixel sensor optimization
sensor optimization a, S. Mitsui a, S. Terada a, Y. Ikegami a, Y. Takubo a, K. Hara b, Y. Takahashi b, O. Jinnouchi c, T. Kishida c, R. Nagai c, S. Kamada d, and K. Yamamura d a KEK, Tsukuba b University
More informationA High Granularity Timing Detector for the Phase II Upgrade of the ATLAS experiment
3 rd Workshop on LHCbUpgrade II LAPP, 22 23 March 2017 A High Granularity Timing Detector for the Phase II Upgrade of the ATLAS experiment Evangelos Leonidas Gkougkousis On behalf of the ATLAS HGTD community
More informationITk silicon strips detector test beam at DESY
ITk silicon strips detector test beam at DESY Lucrezia Stella Bruni Nikhef Nikhef ATLAS outing 29/05/2015 L. S. Bruni - Nikhef 1 / 11 Qualification task I Participation at the ITk silicon strip test beams
More informationRD53 status and plans
RD53 status and plans Luigi Gaioni a,b On behalf of the RD53 Collaboration a University of Bergamo b INFN Pavia The 25 th International Workshop on Vertex Detectors VERTEX 2016 25-30 September 2016 - La
More informationOptical Link of the ATLAS Pixel Detector
Optical Link of the ATLAS Pixel Detector K.K. Gan The Ohio State University October 20, 2005 W. Fernando, K.K. Gan, P.D. Jackson, M. Johnson, H. Kagan, A. Rahimi, R. Kass, S. Smith The Ohio State University
More informationLow Noise Amplifier for Capacitive Detectors.
Low Noise Amplifier for Capacitive Detectors. J. D. Schipper R Kluit NIKHEF, Kruislaan 49 198SJ Amsterdam, Netherlands jds@nikhef.nl Abstract As a design study for the LHC eperiments a 'Low Noise Amplifier
More informationDESIGN AND SIMULATION OF A GaAs HBT POWER AMPLIFIER FOR WIDEBAND CDMA WIRELESS SYSTEM
M. S. Alam, O. Farooq, and Izharuddin and G. A. Armstrong DESIGN AND SIMULATION OF A GaAs HBT POWER AMPLIFIER FOR WIDEBAND CDMA WIRELESS SYSTEM M. S. Alam, O. Farooq, Izharuddin Department of Electronics
More informationATLAS Pixel Opto-Electronics
ATLAS Pixel Opto-Electronics K.E. Arms, K.K. Gan, P. Jackson, M. Johnson, H. Kagan, R. Kass, A.M. Rahimi, C. Rush, S. Smith, R. Ter-Antonian, M.M. Zoeller Department of Physics, The Ohio State University,
More informationEnhanced Low Dose Rate Sensitivity (ELDRS) Radiation Testing of the RH1814MW Quad Op Amp for Linear Technology
Enhanced Low Dose Rate Sensitivity (ELDRS) Radiation Testing of the RH1814MW Quad Op Amp for Linear Technology Customer: Linear Technology (PO 57472L) RAD Job Number: 10-417 Part Type Tested: Linear Technology
More informationCMS Tracker Upgrades. R&D Plans, Present Status and Perspectives. Benedikt Vormwald Hamburg University on behalf of the CMS collaboration
R&D Plans, Present Status and Perspectives Benedikt Vormwald Hamburg University on behalf of the CMS collaboration EPS-HEP 2015 Vienna, 22.-29.07.2015 CMS Tracker Upgrade Program LHC HL-LHC ECM[TeV] 7-8
More informationIndium Phosphide and Related Materials Selectively implanted subcollector DHBTs
Indium Phosphide and Related Materials - 2006 Selectively implanted subcollector DHBTs Navin Parthasarathy, Z. Griffith, C. Kadow, U. Singisetti, and M.J.W. Rodwell Dept. of Electrical and Computer Engineering,
More informationarxiv: v1 [physics.ins-det] 26 Nov 2015
arxiv:1511.08368v1 [physics.ins-det] 26 Nov 2015 European Organization for Nuclear Research (CERN), Switzerland and Utrecht University, Netherlands E-mail: monika.kofarago@cern.ch The upgrade of the Inner
More informationDevelopment of n-in-p Active Edge Pixel Detectors for ATLAS ITK Upgrade
Development of n-in-p Active Edge Pixel Detectors for ATLAS ITK Upgrade Tasneem Rashid Supervised by: Abdenour Lounis. PHENIICS Fest 2017 30th OUTLINE Introduction: - The Large Hadron Collider (LHC). -
More informationPoS(VERTEX2015)008. The LHCb VELO upgrade. Sophie Elizabeth Richards. University of Bristol
University of Bristol E-mail: sophie.richards@bristol.ac.uk The upgrade of the LHCb experiment is planned for beginning of 2019 unitl the end of 2020. It will transform the experiment to a trigger-less
More informationLecture 2. Part 2 (Semiconductor detectors =sensors + electronics) Segmented detectors with pn-junction. Strip/pixel detectors
Lecture 2 Part 1 (Electronics) Signal formation Readout electronics Noise Part 2 (Semiconductor detectors =sensors + electronics) Segmented detectors with pn-junction Strip/pixel detectors Drift detectors
More informationThis article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research and
This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research and education use, including for instruction at the authors institution
More informationRadiation-hard active CMOS pixel sensors for HL- LHC detector upgrades
Journal of Instrumentation OPEN ACCESS Radiation-hard active CMOS pixel sensors for HL- LHC detector upgrades To cite this article: Malte Backhaus Recent citations - Module and electronics developments
More informationThe LHCb Vertex Locator : Marina Artuso, Syracuse University for the VELO Group
The LHCb Vertex Locator : status and future perspectives Marina Artuso, Syracuse University for the VELO Group The LHCb Detector Mission: Expore interference of virtual new physics particle in the decays
More information