Solution 1 TVS Diode Array: CDSOT C 2 Bridge Rectifiers: CDNBS04-B TVS Diode: SMBJ58A 1 Transformer: SM51108EL
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- Winfred Garrett
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1 Solution Products SOT NS Ethernet 10/100 ase-t Power over Ethernet (PoE) P Unit Protection Objective 10/100 ase-t Power over Ethernet (PoE) interfaces combine data and 48 V to provide remote power to a Powered evice (P). This solution provides ES and overcurrent protection for the P unit. Solution 1 TVS iode rray: SOT ridge Rectifiers: NS TVS iode: SMJ58 1 Transformer: SM51108EL ompliance IEEE 802.3af and IEEE af IE Level 4 (8 kv / 15 kv) lternate Recommendations Other PortNote Solutions: Ethernet - ES Protection Ethernet - Power ontact and Surge Protection Ethernet - 10/100 ase-t Power over Ethernet (PoE) PSE Unit Protection ontact ourns for PoE+ or Gbit PoE port solutions. enefit This solution provides ES protection for 10/100 ase-t PoE P devices without impairing the Ethernet signal. SMJ58 P SM51108EL Mode Power SMJ58 NS SM51108EL esign Kit RJ-45 NS Ethernet PHY Mode Power SOT PN-ESIGNKIT-34 The schematic above illustrates the application protection and does not constitute the complete circuit design. Europe: Tel +41-(0) ax +41-(0) mericas: Tel ax sia-pacific: Tel ax OPYRIGHT 2012 OURNS, IN. 6/12 e/pk1133 PortNote is a registered service mark of ourns, Inc. ourns is a registered trademark of ourns, Inc. in the U.S. and other countries. ourns PortNote solutions provide protection recommendations for typical port threats. or more information, go to: or protection@bourns.com
2 *RoHS OMPLINT eatures RoHS compliant* Small SMT package High reliability with superior moisture resistance pplicable to automatic insertion pplications Switching power supply Home appliances, office equipment Telecommunication, factory automation NS ~08800 Surface Mount Rectifier General Information The NS ~08800 device provides ridge Rectification with high reliability with superior moisture resistance for home appliances, office equipment and telecommunications. 4 1 The device provide 0.8 rectification with a choice of repetitive peak reverse voltages from 200 V to 800 V. The device measures 5 mm x 7 mm and is available in a four lead SMT package intended to be mounted directly onto an R4 printed circuit board. 3 2 Electrical haracteristics (@ T = 25 Unless Otherwise Noted) Parameter Maximum Repetitive Peak Reverse Voltage Symbol NS VRRM V Maximum RMS Voltage VRMS V Maximum locking Voltage V V Maximum verage orward Rectified T = 40 1 I(V) 0.8 Maximum Reverse TJ = 25 Maximum Reverse TJ = 100 Maximum orward 0.4 IR 5 µ IR 100 µ V 1.15 V I 2 t Rating for using (T < 8 ms) I 2 t S Maximum Recovery Time TRR ns Typical Thermal Resistance 2 RθJ 50 /W Typical Junction apacitance per element 3 J 13 p Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEE Method) Notes: 1 Mounted on P oard. See orward erating urve. 2 Thermal Resistance from Junction to mbient. 3 Measured at 1 MHz and applied Reverse Voltage of 4.0 V. ISM 30 Unit Thermal haracteristics (@ T = 25 Unless Otherwise Noted) Parameter Symbol NS ~08800 Unit Operating Temperature Range TJ -55 to +150 Storage Temperature Range TSTG -55 to +150 *RoHS irective 2002/95/E Jan 27, 2003 including nnex. Specifications are subject to change without notice.
3 NS ~08800 Surface Mount Rectifier Product imensions This is a molded package weighs approximately g and can be mounted in any position. The dimensions for the packaged device are shown below ( ) ( ) ( ) Recommended ootprint The device will mount onto existing JEE SO-106 footprint ( ) ( ) ( ) ( ) 7.00 (0.276) MX ( ) ( ) 7.00 (0.276) MX ( ) ( ) 5 TYP (0.118) MX (0.008) MX ( ) ( ) IMENSIONS: lock iagram IMENSIONS: The block diagram below includes the pin names and basic electrical connections associated with each channel. 4 1 How To Order ommon ode = hip iode Package NS04 Model Series = ridge Rectifier Maximum Rectified urrent 08 = 100 m Working Peak Reverse Voltage 200 = 200 V RWM 400 = 400 V RWM 600 = 600 V RWM 800 = 800 V RWM NS Typical Part Marking NS NS NS NS Specifications are subject to change without notice.
4 NS ~08800 Surface Mount Rectifier Packaging Specifications The product will be dispensed in Tape and Reel format (see diagram below). P 0 P 1 d Index Hole E T 120 W 2 1 P Trailer evice Leader End 10 pitches (min.) 10 pitches (min.) Start IMENSIONS: W 1 irection of eed evices are packed in accordance with EI standard RS Item Symbol NSOI 4L arrier Width 6.7 ± 0.10 (0.264 ± 0.004) arrier Length 5.5 ± ± arrier epth 2.10 ± ± Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside iameter 330 (12.992) Reel Inner iameter (3.1500) MIN. eed Hole iameter 13.0 ± (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position 3.50 ± 0.05 (0.138 ± 0.002) Punch Hole Pitch P 8.00 ± 0.10 (0.315 ± 0.004) Sprocket Hole Pitch P 4.00 ± (0.157 ± 0.004) Embossment enter P 2.00 ± (0.079 ± 0.002) Overall Tape Thickness T 0.20 ± 0.10 (0.008 ± 0.004) Tape Width W ± 0.20 (0.472 ± 0.008) Reel Width W (0.724) MX. Quantity per Reel Specifications are subject to change without notice.
5 NS ~08800 Surface Mount Rectifier Performance Graphs orward urrent erating urve Maximum Non-Repetitive Surge urrent verage orward urrent (mps) Single Phase Half Wave 60 Hz Resistive or Inductive Load Mounted on P oard mbient Temperature ( ) Peak orward Surge urrent (mps) Pulse Width 8.3 ms Single Half Sine-Wave (JEE Method) Number of ycles at 60 Hz Typical orward haracteristics 10.0 Typical Reverse haracteristics Instantaneous orward urrent (mps) TJ = 125 TJ = Pulsewidth: 300 µs Instantaneous orward Voltage (Volts) Instantaneous Reverse Leakage urrent (m) TJ = 125 TJ = Percent of Rated Peak Reverse Voltage (%) Typical Junction apacitance 100 Junction apacitance (p) 10 TJ = 25 f = MHz sia-pacific: Tel: ax: Europe: Tel: ax: The mericas: Tel: ax: Reverse Voltage (Volts) REV. 06/11 Specifications are subject to change without notice.
6 *RoHS OMPLINT eatures RoHS compliant* IEEE802 3af/NSI X3.263 pplications VolP PoE SM51108L 10/100 ase Tx VolP Modules (Power over Ethernet - PoE) Electrical Specifications Inductance - Open ircuit μh min....(100 KHz, 0.1 V with 8 m bias) Turns Ratio..1T: 1T Insertion Loss MHz, -1.2 d max. Return Loss (@ 100 ohms) 1-30 MHz d min. 40 MHz..-14 d min. 50 MHz..-13 d min MHz d min. ross Talk 60 MHz..-40 d min. 100 MHz -35 d min. MRR 30 MHz.-43 d min. 60 MHz..-37 d min. 100 MHz -33 d min. PoE urrent..up to 320 m Isolation V Operating Temperature to +85 Packaging Specifications Electrical Schematic 7.00 (0.276) MX. T+ TT R+ RT Product imensions MX. (0.472) 8.89 (0.350) ourns SM51108L YYWW 9.30 (0.366) Recommended Layout 7.13 (0.281) 16 TX1+ 15 TXT 11 RX1+ 10 RXT 9 T- 14 TX1- R- RX (0.350) (0.413) pcs. /reel How To Order SM51108E L Model Termination L = Tin only (RoHS ompliant) PIN ± 0.25 (0.215 ± 0.010) 0.48 ± 0.30 (0.019 ± 0.012) 1.27 (0.005) 0.24 ± 0.14 (0.010 ± 0.006) 0.76 (0.030) IMENSIONS: 1.27 (0.005) 0 ~ (0.028) REV. 06/12 *RoHS irective 2002/95/E Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, ustomers should verify actual device performance in their specifi c applications
7 *RoHS OMPLINT eatures RoHS compliant* Low capacitance - 1 p ES protection >15 kv Protects 4 I/O and 1 V line pplications HMI 1.3 version Ps and notebooks onsumer electronics isplay port interface US 2.0 up to 480 Mb/s SOT TVS/Steering iode rray General Information The SOT device provides ES, ET and Surge protection for high speed data ports meeting IE (ES), IE (ET) and IE (Surge) requirements. The Transient Voltage Suppressor array offers a Working Peak Reverse Voltage of 5 V and Minimum reakdown Voltage of 6 V. I/O 4 6 V 5 I/O 3 4 The SOT23-6 packaged device will mount directly onto the industry standard SOT23-6 footprint. ourns hip iodes are easy to handle with standard pick and place equipment and their fl at confi guration minimizes roll away I/O 1 GN 1/O 2 Thermal haracteristics (@ T = 25 Unless Otherwise Noted) Parameter Symbol SOT Unit Peak Pulse urrent (tp = 8/20 µs) I PP 5.5 Storage Temperature T STG -55 to +150 º Operating Temperature T OPR -55 to +85 º Operating Supply Voltage V 6 V ES per IE (ir) (I/O Pins) ES per IE (ontact) (I/O Pins) ES per IE (ir) (V to GN) ES per IE (ontact) (V to GN) V ES_IO 15 8 V ES_V Voltage at any I/O Pin V IO (GN-0.5) to (V +0.5) V Electrical haracteristics (@ T = 25 Unless Otherwise Noted) Parameter Symbol SOT Unit Maximum Reverse Standoff Voltage 1 V RWM 5.0 V Maximum Leakage urrent V RWM I L 2.0 µ Maximum hannel Leakage V RWM I µ Minimum Reverse reakdown Voltage I V = 1 m V R 6.0 V Maximum orward Voltage I = 15 m V 1.2 V Maximum lamping Voltage 5 8/20 µs V 10 V Typical ES lamping Voltage - I/O 2 V clamp_io 14 V Maximum hannel Input apacitance V PIN5 = 5 V, V PIN2 = 0 V, V IN = 2.5 V, f = 1 IN 1.2 p MHz Maximum hannel to hannel Input apacitance V PIN5 = 5 V, V PIN2 = 0 V, ROSS 0.12 p V IN = 2.5 V, f = 1 MHz Maximum Variation of hannel Input V PIN5 = 5 V, V PIN2 = 0 V, V IN = 2.5 V, f = 1 MHz (I/O Pin to GN) Δ IN 0.05 p NOTES: 1. Pin 5 to Pin 2 (GN) 3. etween any two of Pins 1,3,4,6 2. Pin 1,3,4 or 6 to Pin 2 (GN) 4. Pin 2 (GN) to Pin 5 kv kv *RoHS irective 2002/95/E Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, Specifications are subject to change without notice.
8 SOT TVS/Steering iode rray Product imensions This is a molded SOT23-6L package with lead free 100 % Matte Sn on the lead frame. It weighs approximately 3 mg and has a fl ammability rating of UL 94V-0. Recommended ootprint 2.40 (0.094) 2.80 (0.110) S 2.90 (0.114) S ( ) 0.60 RE. (0.024) 1.60 (0.063) S ( ) ( ) (0.010) S 0.70 (0.028) 0 (0.039) 0.95 (0.037) 1.90 (0.074) 0.95 S (0.037) 1.90 S (0.075) IMENSIONS = MILLIMETERS IMENSIONS = MILLIMETERS ( ) Typical Part Marking SOT MX. (0.006) 1.45 (0.057) MX. ircuit iagram How to Order ommon ode hip iode Package SOT236 = SOT23-6 Package Working Peak Reverse Voltage 05 = 5 V RWM (Volts) Number of Lines 04 = 4 ata Lines Suffi x = Low apacitance SOT
9 SOT TVS/Steering iode rray Typical haracteristics Typical Variation of IN vs. VIN Typical Variation of IN vs. VIN apacitance (p) 0.9 V = 5 V, GN = 0 V, f = 1 MHz, T = Voltage (V) apacitance (p) 0.9 V = floated, GN = 0 V, f = 1 MHz, T = Voltage (V) Typical Variation of IO to IO vs. VIN apacitance (p) V = 5 V, GN = 0 V, f = 1 MHz, T = Voltage (V) Insertion Loss S21 (I/O to GN) Typical Variation of IO to IO vs. VIN apacitance (p) V = floated, GN = 0 V, f = 1 MHz, T = Voltage (V) Insertion Loss S21 (I/O to GN) Insertion Loss (d) e+8 1e+9 requency (Hz) V = 5 V 3 GHz: d 3.6 GHz: -3 d Insertion Loss (d) e+8 1e+9 requency (Hz) V = floated 3 GHz: d 3.14 GHz: -3 d Specifications are subject to change without notice.
10 SOT TVS/Steering iode rray Packaging Information The product is packaged in tape and reel format per EI-481 standard. d P 0 P 1 PRT ORIENTTION Index Hole E T 120 PIN 1 W 2 1 P Trailer evice Leader End 10 pitches (min.) 10 pitches (min.) Start IMENSIONS: W 1 irection of eed Item Symbol SOT23-6 arrier Width arrier Length arrier epth Sprocket Hole d 3.90 ± 0.10 (0.154 ± 0.004) 3.90 ± 0.10 (0.154 ± 0.004) 0.90 ± 0.10 (0.035 ± 0.004) 1.55 ± 0.05 (0.061 ± 0.002) 178 Reel Outside iameter (7.008) 50.0 Reel Inner iameter 1 (1.969) MIN. eed Hole iameter ± 0.20 (0.512 ± 0.008) Sprocket Hole Position Punch Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) 3.50 ± 0.05 (0.138 ± 0.002) 4.00 ± 0.10 Punch Hole Pitch P (0.157 ± 0.004) 4.00 ± 0.10 Sprocket Hole Pitch P 0 (0.157 ± 0.004) 2.00 ± 0.05 Embossment enter P 1 (0.079 ± 0.002) Overall Tape Thickness T 0.20 ± 0.10 (0.008 ± 0.004) 8.00 ± 0.20 Tape Width W (0.315 ± 0.008) 14.4 Reel Width W 1 (0.567) MX. Quantity per Reel sia-pacific: Tel: ax: Europe: Tel: ax: The mericas: Tel: ax: REV. 12/12
11 *RoHS OMPLINT eatures RoHS compliant* Surface Mount SM package Standoff Voltage: 5 to 495 volts Power issipation: 600 watts pplications IE ES (Min. Level 4) IE ET IE Surge SMJ Transient Voltage Suppressor iode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. ourns offers Transient Voltage Suppressor iodes for surge and ES protection applications, in compact chip package O-214 (SM) size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and reakdown Voltage up to 550 V. Typical fast response times are less than ns for unidirectional devices and less than 5.0 ns for bidirectional devices from 0 V to Minimum reakdown Voltage. ourns hip iodes conform to JEE standards, are easy to handle with standard pick and place equipment and the fl at confi guration minimizes roll away. Electrical haracteristics (@ T = 25 Unless Otherwise Noted) Parameter Symbol Value Unit Minimum Peak Pulse Power issipation (T P = 1 ms) (Note 1,2) P PK 600 Watts Peak orward Surge urrent 8.3 ms Single Half Sine Wave Superimposed on Rated Load I SM 100 mps (JEE Method) (Note 3) Steady State Power TL = 75 P M(V) 5.0 Watts Maximum Instantaneous orward I PP = 50 (or Unidirectional Units Only) V (Note 5) Volts Operating Temperature Range T J -55 to +150 Storage Temperature Range T STG -55 to Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 per Pulse erating urve. 2. Thermal Resistance Junction to Lead ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only). 4. Single Phase, Half Wave, 60 Hz, resistive or inductive load. or capacitive load, derate current by 20 %. 5. V = 3.5 V on SMJ5.0 through SMJ90 and V = 5.0 V on SMJ100 through SMJ495. How to Order SMJ 5.0 sia-pacific: Tel: ax: Europe: Tel: ax: The mericas: Tel: ax: Package SMJ = SM/O-214 Working Peak Reverse Voltage 5.0 = 5.0 V RWM (Volts) Suffi x = 5 % Tolerance Unidirectional evice = 5 % Tolerance idirectional evice *RoHS irective 2002/95/E Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, ustomers should verify actual device performance in their specifi c applications.
12 SMJ Transient Voltage Suppressor iode Series Electrical haracteristics T = 25 Unless Otherwise Noted) Unidirectional evice idirectional evice reakdown Voltage V R (Volts) Working Peak Reverse Voltage Maximum Reverse V RWM Maximum Reverse I RSM Maximum Reverse Surge urrent Part Part Part Part V Min. I Number Marking Number Marking T (m) RWM (Volts) I R (μ) V RSM (Volts) I RSM (mps) SMJ5.0 KE SMJ5.0 E SMJ6.0 KG SMJ6.0 G SMJ6.5 KK SMJ6.5 K SMJ7.0 KM SMJ7.0 M SMJ7.5 KP SMJ7.5 P SMJ8.0 KR SMJ8.0 R SMJ8.5 KT SMJ8.5 T SMJ9.0 KV SMJ9.0 V SMJ10 KX SMJ10 X SMJ11 KZ SMJ11 Z SMJ12 LE SMJ12 E SMJ13 LG SMJ13 G SMJ14 LK SMJ14 K SMJ15 LM SMJ15 M SMJ16 LP SMJ16 P SMJ17 LR SMJ17 R SMJ18 LT SMJ18 T SMJ20 LV SMJ20 V SMJ22 LX SMJ22 X SMJ24 LZ SMJ24 Z SMJ26 ME SMJ26 E SMJ28 MG SMJ28 G SMJ30 MK SMJ30 K SMJ33 SMJ33 M SMJ36 MP SMJ36 P SMJ40 MR SMJ40 R SMJ43 MT SMJ43 T SMJ45 MV SMJ45 V SMJ48 MX SMJ48 X SMJ51 MZ SMJ51 Z SMJ54 NE SMJ54 E SMJ58 NG SMJ58 G SMJ60 NK SMJ60 K SMJ64 NM SMJ64 M SMJ70 NP SMJ70 P SMJ75 NR SMJ75 R SMJ78 NT SMJ78 T SMJ85 NV SMJ85 V SMJ90 NX SMJ90 X SMJ100 NZ SMJ100 Z SMJ110 PE SMJ110 EE SMJ120 PG SMJ120 EG SMJ130 PK SMJ130 EK SMJ150 PM SMJ150 EM SMJ160 PP SMJ160 EP SMJ170 PR SMJ170 ER SMJ SMJ SMJ SMJ Notes: 1. Suffix denotes a 5 % tolerance unidirectional device. 3. or bidirectional devices with a V R of 10 volts or less, the I R limit is double. 2. Suffi x denotes a 5 % tolerance bidirectional device. 4. or unidirectional devices with a V max. of 3.5 V at an I of 35, 0.5 Sine Wave of 8.3 ms Pulse Width. ustomers should verify actual device performance in their specifi c applications.
13 SMJ Transient Voltage Suppressor iode Series Product imensions Recommended ootprint G H imension E G H E SM (O-214) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) imension (Max.) (Min.) (Min.) Physical Specifications IMENSIONS: SM (O-214) 2.69 (0.106) 2.10 (0.083) 1.27 (0.050) ase.molded plastic per UL lass 94V-0 Polarity.. athode band indicates unidirectional device No cathode band indicates bidirectional device Weight ounces / grams IMENSIONS: ustomers should verify actual device performance in their specifi c applications.
14 SMJ Transient Voltage Suppressor iode Series Rating & haracteristic urves Pulse erating urve Peak Pulse erating in Percent of Peak Power or urrent x 1000 Waveform as efined by R.E mbient Temperature ( ) Pulse Waveform Maximum Non-Repetitive Surge urrent Peak orward Surge urrent (mps) Pulse Width 8.3 ms 20 Single Half Sine-Wave (JEE Method) Typical Junction apacitance Number of ycles at 60 Hz I P, Peak Pulse urrent (%) TR=10 µs Peak value (IRSM) Half value= IRSM 2 T=25 TP Pulse width (TP) is defined as that point where the peak current decays to 50 % of IPSM. 10 x 1000 waveform as defined by R.E.. apacitance (p) idirectional Unidirectional T = T, Time (ms) Pulse Rating urve Standoff Voltage (Volts) Steady State Power erating urve 5.0 P P, Peak Power (KW) mm Lead reas T = 25 Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph µs µs 10 µs 100 µs ms 10 ms TP, Pulse Width RM(V) Steady State Power issipation (W) Hz Resistive or Inductive Load TL, Lead Temperature ( ) ustomers should verify actual device performance in their specifi c applications.
15 N5-0504N SMJ Transient - Voltage TVS/Steering Suppressor iode iode rrayseries Packaging Information The product will be dispensed in tape and reel format (see diagram below). P 0 Pin 1 Location P 1 d Index Hole E W T P Trailer evice Leader End 10 pitches (min.) 10 pitches (min.) Start IMENSIONS: W 1 irection of eed evices are packed in accordance with EI standard RS-481- and specifi cations shown here. Item Symbol SM (O-214) arrier Width 4.94 ± 0.10 ( ) arrier Length 5.57 ± 0.10 (0.210 ± 0.004) arrier epth 2.36 ± 0.10 (0.093 ± 0.004) Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside iameter 330 (12.992) 50.0 Reel Inner iameter 1 (1.969) MIN ± 0.20 eed Hole iameter 2 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) 4.00 ± 0.10 Sprocket Hole Pitch P 0 (0.157 ± 0.004) 2.00 ± 0.05 Embossment enter P 1 (0.079 ± 0.002) Overall Tape Thickness T 0.30 ± 0.10 (0.012 ± 0.004) Tape Width W ± 0.20 (0.472 ± 0.008) 18.4 Reel Width W 1 (0.724) MX. Quantity per Reel -- 3,000 REV. 08/12 ustomers should verify actual device performance in their specifi c applications.
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