CDDFN N - Surface Mount TVS Diode Array

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Sydney Rich
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*RoHS OMPLINT eatures n I -- (S) ±3 kv (ir/ontact) I -- (Lightning) (/ μs) n S protection to I -- (Level ) n RoHS compliant* pplications n WN/LN devices n // thernet N-7N - Surface Mount TVS iode

1 *RoHS OMPLINT eatures n I -- (S) ±3 kv (ir/ontact) I -- (Lightning) (/ μs) n S protection to I -- (Level ) n RoHS compliant* pplications n WN/LN devices n // thernet N-7N - Surface Mount TVS iode rray General Information The Model N-7N device provides lectrostatic ischarge (S), lectrical ast Transients (T), Lightning, and able ischarge vent () protection for high-speed data ports, meeting I -- (S) requirements. The Transient Voltage Suppressor array, protecting up to four data lines, offers a Working Peak Reverse Voltage of. V and a Minimum reakdown Voltage of 3 V. The N packaged device has a low typical capacitance of only.7 p between I/O lines. This allows it to be used for protecting sensitive components used on high-speed interfaces. The small footprint of the device allows for flow-through routing on the P, helping to maintain matched impedances of the high-speed data lines. Pin Line In Pin Line Out Pin Line In Pin 9 Line Out Pin Line 3 In Pin 7 Line 3 Out Pin Line In Pin Line Out bsolute Maximum Ratings (@ T = Unless Otherwise Noted) Parameter Symbol N-7N Unit Peak Pulse urrent (t p = / μs) I pp Operating Temperature T OP - to + º Storage Temperature T STG - to + º lectrical haracteristics (@ T = Unless Otherwise Noted) Parameter Symbol Min. Typ. Max. Unit Working Peak Reverse Voltage V WM. V reakdown m V R 3 7 V Leakage V WM I R µ V, f = MHz (etween I/O Pins) IN.7. p lamping / I PP V V S Protection per I --- ontact ischarge ir ischarge ±3 ±3 kv *RoHS irective /3, Mar 3, and nnex.

2 N-7N 33 - mm SM - Surface Trimming Mount Potentiometer TVS iode rray Rating & haracteristic urves Typical Voltage vs. apacitance IN Typical lamping Voltage vs. Peak Pulse urrent Input apacitance (p) Input Voltage (V) etween I/O Pins f = MHz, T = lamping Voltage (V) etween I/O Pins Waveform Parameters: tr = µs td = µs 3 3 Peak Pulse urrent () Line-to-Line, Two I/O Pins onnected Together on ach Line Typical Transmission Line Pulsing (TLP) Transmission Line Pulsing (TLP) urrent () V_pulse Pulse from a transmission line TLP_I ns + TLP_V UT - etween I/O Pins Transmission Line Pulsing (TLP) Voltage (V)

3 N-7N 33 - mm SM - Surface Trimming Mount Potentiometer TVS iode rray Reference pplication The ourns Model N-7N is designed to protect four high-speed data lines operating at. volts from system S/T/Lightning pulses. The use of a N package using a feed-through layout provides minimal impedance change on the high-speed data line, while the low capacitance performance of the device limits signal degradation on each channel. Gigabit thernet LN Port Tx+ L-G V Tx+ Tx- Rx+ Tx- Rx+ Rx- Tx+ Tx- Rx Rx- Tx+ Rx- N-7N 7 Ohms Tx- Rx+ / kv Rx- RJ ONNTOR Typical Part Marking N-7N.7 How to Order N - 7 N evice Pinout Line In Line In GN 9 Line Out Line Out ommon ode hip iode Package N = N- Package Model esignator 7 =. V RWM (Volts) Suffix N = Low apacitance GN 3 GN GN Line 3 In 7 GN Line 3 Out Line In Line Out

4 N-7N - Surface Mount TVS iode rray Product imensions PIN INITOR (LSR MRK) PIN INITOR. R () Nx L e TOP VIW e e e 3 PLS. 3 N e3 e3 OTTOM VIW 3 PLS. bbb Symbol 3 b e e e3 L aaa bbb imension Min. Nom. Max.... (.) (.) (.)... (.) (.) (.).3 R. (.)... (.) (.) (.) (.) (.) (.).9.. (.7) (.79) (.3). S (.). S (.).9 S (.37)..3. (.) (.) (.).9.. (.37) (.39) (.)..3.3 (.) (.) (.). (.3). (.) IMNSIONS: MM (INHS) aaa SI VIW 3 Moisture Sensitivity Level (MSL)... 3 S lassification (HM)...3 Recommended ootprint. (.) G H Symbol G H imension. (.). (.).9 (.7). (.). (.).9 (.37). (.). (.). (.39). (.3)

5 N-7N 33 - mm SM - Surface Trimming Mount Potentiometer TVS iode rray Packaging Information The product is packaged in a mm x mm tape and reel format per I-- standard. P Pin Location P d Index Hole W T P Trailer evice Leader nd ± 3 (.99 ±.) ± 3 (.7 ±.) Start IMNSIONS: MM (INHS) W irection of eed Item Symbol imension arrier Width arrier Length arrier epth Sprocket Hole Reel Outside iameter d.3 ±. (.9 ±.) 3.3 ±. (.3 ±.).7 ±. (. ±.). ±. (.9 ±.) 7 (7.). Reel Inner iameter MIN. (.99) eed Hole iameter 3. ±. (. ±.) Sprocket Hole Position Punch Hole Position Punch Hole Pitch P.7 ±. (.9 ±.). ±. (.7 ±.). ±. (.7 ±.) Sprocket Hole Pitch P. ±. (.7 ±.) mbossment enter P. ±. (.79 ±.) Overall Tape Thickness Tape Width T W.3 ±. (. ±.). ±.3 (.7 ±.). Reel Width W MX. (.) Quantity per Reel -- 3 sia-pacific: Tel: mail: asiacus@bourns.com urope: Tel: mail: eurocus@bourns.com The mericas: Tel: mail: americus@bourns.com 7/7 The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.

6 Mouser lectronics uthorized istributor lick to View Pricing, Inventory, elivery & Lifecycle Information: ourns: N-7N

CDNBS08-SLVU Low Capacitance TVS Array

CDNBS08-SLVU Low Capacitance TVS Array *RoHS OMPLINT eatures RoHS compliant* Protects up to four I/O ports Surge protection S protection Low capacitance: 6 p pplications thernet - 1/1 ase T Personal digital assistants LN devices Instrumentation