CDNBS08-SLVU Low Capacitance TVS Array

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Hope Terry
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1 *RoHS OMPLINT eatures RoHS compliant* Protects up to four I/O ports Surge protection S protection Low capacitance: 6 p pplications thernet - 1/1 ase T Personal digital assistants LN devices Instrumentation NS8-SLVU Low apacitance TVS rray General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components ourns offers Transient Voltage Suppressor rray combination diodes for surge and S protection applications in an eight lead narrow body SOI package size format. ourns hip iodes conform to J standards, are easy to handle on standard pick and place equipment and their fl at confi guration minimizes roll away. The ourns device will meet I (S), I (T) and I (Surge) requirements lectrical haracteristics (@ T = 25 Unless Otherwise Noted) Parameter Symbol Min. Nom. Max. Unit Peak Pulse urrent (t p = 8/2 µs) I PP 3 Peak Pulse Power (t p = 8/2 µs) 1 P PP 6 W Working Voltage V WM 2.8 V reakdown 1 m V R 3. V Leakage V WM I.1 1. µ V, 1 MHz 6 p Snapback 5 m 2.8 V S Protection per I ontact ischarge ir ischarge S ± 8 ±15 ±3 ±3 kv T Protection per I 5/5 ns T 6 Surge Protection per I lamping 8/2 I P = 5 2 V 1 I P = 24 2 V I PP = 3 2 V V Notes: 1. See Peak Pulse Power vs. Pulse Time. 2. ach differential line pair. Thermal haracteristics (@ T = 25 Unless Otherwise Noted) Parameter Symbol Min. Nom. Max. Unit Junction Temperature Range T J Storage Temperature Range T STG *RoHS irective 22/95/ Jan. 27, 23 including annex and RoHS Recast 211/65/U June 8, 211. ustomers should verify actual device performance in their specific applications.

2 NS8-SLVU Low apacitance TVS rray Product imensions This is an RoHS compliant molded J narrow body SO-8 package with 1 % Sn plating on the lead frame. It weighs approximately 15 mg and has a fl ammability rating of UL 94V-. Recommended ootprint J 45 NOM. G 4 ± 4 I H 7 NOM. 4 PLS. imensions 7 NOM. 3 PLS. IMNSIONS = MILLIMTRS (INHS) ( ) ( ) Min. (.245) Min. K L ( ) (.4 -.5) G H I J K L imensions ( ) ( ) (.228 ±.244) ( ) ( ) (.4 -.8) (.1 -.2) ( ) ( ) ( ) ( ) 1.27 (.5) Typical Part Marking NS8-SLVU How to Order ommon ode hip iode Package NS8 = Narrow ody SOI8 Package l SLVU = Low apacitance TVS rray Working Peak Reverse Voltage 2.8 = 2.8 V RWM (Volts) Number of iodes SL4 NS8 - SLVU ustomers should verify actual device performance in their specific applications.

3 NS8-SLVU Low apacitance TVS rray pplication iagram IRNTIL LIN PIR 1 IRNTIL LIN PIR 2 LIN LIN LIN LIN evice Pinout Pin Unidirectional ommon idirectional ommon idirectional ifferential 1 Line 1 Line 1 Line Pair 1 2 GN GN Line Pair 1 3 Line 3 GN Line Pair 2 4 GN Line 2 Line Pair 2 5 Line 4 Line 2 Line Pair 2 6 GN GN Line Pair 2 7 Line 2 GN Line Pair 1 8 GN Line 1 Line Pair 1 ONIGURTION OR PROTTING TWO IRNTIL LIN PIRS lock iagram ustomers should verify actual device performance in their specific applications.

4 NS8-SLVU mm SM - Trimming Low apacitance Potentiometer TVS rray Performance Graphs Peak Pulse Power vs Pulse Time 1, PPP Peak Pulse urrent (W) 1, 6 W, 8/2 µs Waveform , 1, td Pulse uration (µs) Pulse Waveform IPP Peak Pulse urrent (% of IPP) tt e t td = t IPP/ t Time (µs) Test Waveform Parameters tt = 8 µs td = 2 µs Power erating urve lamping Voltage vs. Peak Pulse urrent % of Rated Power TL Lead Temperature ( ) Peak Pulse Power 8/2 µs verage Power lamping Voltage (V) ifferential Line Pair 6 Waveform 4 Parameters: tr=8 µs 2 td=2 µs Variation of in vs. V in Peak Pulse urrent () 7 6 ifferential Line Pair Input apacitance (p) f = 1 MHz, T = Input Voltage (V) ustomers should verify actual device performance in their specific applications.

5 NS8-SLVU mm SM Trimming - Low apacitance Potentiometer TVS rray Packaging Information The product is packaged in tape and reel format per I-481 standard. d P P 1 PRT ORINTTION Index Hole T 12 PIN 1 W 2 1 P Trailer evice Leader nd Start W 1 1 pitches (min.) 1 pitches (min.) IMNSIONS: MM (INHS) irection of eed Item Symbol NSOI 8L arrier Width arrier Length arrier epth Sprocket Hole Reel Outside iameter d 6.7 ±.1 (.264 ±.4) 5.5 ±.1 (.217 ±.4) 2.1 ±.1 (.83 ±.4) 1.55 ±.5 (.61 ±.2) 33 (12.992) Reel Inner iameter 1 8. (3.15) MIN. eed Hole iameter ±.2 (.512 ±.8) Sprocket Hole Position Punch Hole Position Punch Hole Pitch P 1.75 ±.1 (.69 ±.4) 3.5 ±.5 (.138 ±.2) 8. ±.1 (.315 ±.4) Sprocket Hole Pitch P 4. ±.1 (.157 ±.4) mbossment enter P 1 2. ±.5 (.79 ±.2) Overall Tape Thickness Tape Width T W.2 ±.1 (.8 ±.4) 12. ±.2 (.472 ±.8) Reel Width W (.724) MX. Quantity per Reel RV. 12/12 ustomers should verify actual device performance in their specific applications. sia-pacific: Tel: ax: urope: Tel: ax: The mericas: Tel: ax:

CDDFN N - Surface Mount TVS Diode Array

CDDFN N - Surface Mount TVS Diode Array *RoHS OMPLINT eatures n I -- (S) ±3 kv (ir/ontact) I -- (Lightning) (/ μs) n S protection to I -- (Level ) n RoHS compliant* pplications n WN/LN devices n // thernet N-7N - Surface Mount TVS iode rray