b b Fig. 1 Transistor symbols
|
|
- Garey Sims
- 5 years ago
- Views:
Transcription
1 TRANSISTORS Transistors have three terminals which are referred to as emitter (e), base (b) and collector (c). Fig 1 shows the symbols used for the two types of transistors in common use. c c b b e e npn type pnp type Fig. 1 Transistor symbols Both types operate in a very similar way but differ in the polarity of the power supply required to power them. We shall concentrate our study and practical investigations upon npn types. Operation A transistor is a device that amplifies current; it should not be confused with the operational amplifier that amplifies voltage. A small current in the base is amplified to produce a larger current in the collector. The amplification or gain of the transistor is dependant upon the type used. A transistor can be considered as a diode that has a method of current control from the base. As with a diode a 'turn-on' voltage of approximately 0.6V is required between the base and the emitter to allow any collector current to flow. 1
2 CURRENT FLOW THROUGH A TRANSISTOR The arrow on the emitter shows the direction in which conventional current can flow through a transistor. In our switching circuits, the emitter will be connected to the line. There are two current paths through the transistor. They are from base to emitter (I B ), and from collector to emitter ( ). I B I E = I B + Fig. 2 SWITCHING ACTION OF A TRANSISTOR Fig 3 shows a circuit where a transistor is being used as a switching device. +V CC LAMP (load) INPUT (from sensing unit) OUTPUT V in Fig. 3 Transistor switch Current can only flow through the output transducer in the collector circuit when a small current flows in the base circuit. A small base current is used to switch a much larger current in the collector circuit. The voltage provided by an input signal sensing unit can be used to drive the small base current. Resistor protects the transistor by limiting the base current. Let us now consider what happens as the voltage provided by an input sensor increases from. There are three regions to consider: 2
3 REGION 1: CUT-OFF (V in <0.6V) The base-emitter junction of a transistor is very similar to a diode. It does not turn on until a voltage of 0.6V is applied across it. If the signal from the input sensor is less than 0.6V, no base current flows and the transistor is cut-off. In Fig 4 the load has been represented by a resistor and V out is the voltage at the collector of the transistor. No current flows through the collector load resistor, R C, and the collector will be at the supply voltage of +V CC. +V cc +V cc = 0 = h FE I B R C R C V out = V CC I B = 0 I B = Vin V Fig. 4 Transistor cut-off (Vin <0.6V) Fig. 5 Transistor partly on (Vin >0.6V) REGION 2: LINEAR REGION When the signal provided by the input sensor reaches 0.6V current will start to flow in the base circuit. The transistor behaves like a current amplifier and, over a limited range, the collector current ( ) and the base current (I B ) are linked by the equation: = h FE x I B where h FE is the DC current gain of the transistor. The value of h FE varies from transistor to transistor and from type to type. It is usually in the range Voltage across = V in I B = V in = h FE x I B V out = V CC - I c X R C 3
4 The equation shows that as V in increases, the value of V out decreases i.e. the transistor produces an inverting action. Over a small region, the value of V out falls linearly as V in increases and the transistor is partly on. REGION 3: SATURATION If we keep increasing the input voltage, a point will be reached where the collector current drops the full supply voltage across the load. The output voltage is then near and the transistor is said to be saturated. Further increase in input voltage will increase the base current but not the collector current. Fig. 6 illustrates the voltage transfer characteristics of a transistor. CUT OFF +V CC LINEAR V out REGION 0 SATURATION 0.6V V in Fig. 6 When the transistor is used as a switching device, the input voltage should change quickly between the cut-off and saturation regions. The higher the gain, h FE, the sharper the switching action. In practice you will find that the output voltage does not fall to when the transistor is saturated. A typical value would be about 0.1V. In our calculation shall assume an ideal transistor where V out falls to in saturation. Applying current at a junction rule: = I E + I B Over the linear region: = h FE x I B Since h FE is usually >100, we can assume that I E =. 4
5 POWER DISSIPATION IN A TRANSISTOR SWITCH Before we deal with applications of a transistor switch we must consider power dissipation over the three regions. (a) CUT-OFF In this case, no current flows through the transistor and so no power is dissipated. (b) LINEAR REGION Power dissipated in the base-emitter junction = 0.6 x I B ( and can usually be ignored) Power dissipated in the collector-emitter = V out x The latter will be at its maximum near the middle of the linear region. (c) SATURATION REGION If we assume that V out = 0 when the transistor is saturated, no power will be dissipated due to. The only power dissipated will be 0.6I B. When a transistor is used as a switching device, the input voltage variation should be such that the transistor operates in the cut-off or saturation regions only. 5
6 CIRCUIT ANALYSIS EXAMPLE 1: The transistor shown has a current gain h FE of 100. Calculate the minimum value of V in to ensure saturation. 1k 9V V in 10k V out (a) Assume V out = 0 when transistor saturated. We can find the value of by applying Ohm s law to the 1k load resistor. = 9/1 = 9mA I B = /h FE = 9/100 = 0.09mA V in = I B = (0.09 x 10) = +1.5V 6
7 EXAMPLE 2: Calculate a suitable value for to ensure saturation. Assume h FE = V When saturated, = 60mA 6V, Min value of I B = 60/200 = 0.3mA 0.06A V in = I B V = = 2.4 = 8 kω A 6.8kΩ resistor could be used. SWITCHING INDUCTIVE LOADS If the load in the collector circuit is inductive e.g. a relay coil, a high voltage is induced, especially at switch off. The induced voltage could damage the transistor. In such a case, a diode is used to short circuit the induced voltage. V CC Relay coil 7
8 DARLINGTON PAIR The current gain h FE of a transistor will be in the range Much higher gains can be obtained using two transistors connected together to form a Darlington Pair. 1 I B1 TR1 2 TR2 I E1 = I B2 Fig. 8.7 Darlington pair Since two transistors are used, the turn-on voltage will be 1.2V If the transistors are operated in their linear regions: 1 = h FE1 x I B1 Since collector and emitter currents are almost equal: For transistor TR2: I B2 = I E1 = h FE1 x I B1 2 = h FE2 I B2 = h FE2 x h FE1 x I B1 Since 2 >> 1, the overall gain is given by: Current gain = 2 = h FE1 x h FE2 I B1 The transistors used could be an identical pair, but more often than not, TR2 is of a higher power rating than TR1 e.g. a BC108 could be used for TR1 and a BFY51 for TR2. The higher gain increases the input resistance of the unit. 8
9 Example In the following diagram Transistors TR1 and TR2 have current gains of 100 and 50 respectively. 680Ω +6V 15k TR1 TR2 V in What minimum value of input current is required to drive the Darlington pair into saturation?. ma What minimum value of input voltage will drive the Darlington pair into saturation? Answer to nearest 0.01V. +. V 9
10 TRANSISTOR PACKAGES All transistors have three connection points but their appearance can vary depending upon their power handling and current carrying capacity. Fig 8.8 shows examples of packages in common use. E-line TO18 & TO39 TO3 Fig.8 Transistor packages E-line transistors are encapsulated in a plastic case. The ZTX651 is a popular choice in this range. They can be used to switch load currents of up to 2A and can dissipate power up to 1W. Power can be dissipated through the thick connecting leads fitted on the device. The BFY51 transistor is enclosed in the large TO39 metal case. It can handle larger currents and dissipate more power than the BC108 transistor which is enclosed in the smaller TO18 case. Power dissipation can be increased by fitting a heat sink on the case. Type TO3 packages are used for very high power switching applications. Transistors enclosed in such packages can switch current of up to 50A and are capable of dissipating 100W when mounted on a suitable heat sink. Fig.8 also shows how to identify the leads and connection points on transistors. Make certain that you can identify the leads when carrying out your practical exercise. 10
Home Map Projects Construction Soldering Study Components 555 Symbols FAQ Links
1 of 7 7/3/2010 10:15 μμ Home Map Projects Construction Soldering Study Components 555 Symbols FAQ Links This page explains the operation of transistors in circuits. Practical matters such as testing,
More informationECE 2210 Transistor Switching Circuit Examples A.Stolp 11/21/06 rev 12/3/14 Ex.1
Transistor Switching Circuit Examples A.Stolp 11/21/06 rev 12/3/14 Ex.1. 100 Ω B. 0.7 CC. 12 I C = CC. 12 C =. 5 kω B P Q = The little open circles are connections, in this case to unseen power supplies.
More informationChapter 3. Bipolar Junction Transistors
Chapter 3. Bipolar Junction Transistors Outline: Fundamental of Transistor Common-Base Configuration Common-Emitter Configuration Common-Collector Configuration Introduction The transistor is a three-layer
More informationLab no. 4 Bipolar Transistor (NPN and PNP)
Lab no. 4 Bipolar Transistor (NPN and PNP) Transistors are semiconductor devices that enable to control the flow of large current by much smaller current. Bipolar transistor consists of three areas of
More informationTransistor Characteristics
Transistor Characteristics Topics covered in this presentation: Transistor Construction Transistor Operation Transistor Characteristics 1 of 15 The Transistor The transistor is a semiconductor device that
More informationChapter 6: Transistors and Gain
I. Introduction Chapter 6: Transistors and Gain This week we introduce the transistor. Transistors are three-terminal devices that can amplify a signal and increase the signal s power. The price is that
More informationEXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT
EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT 1. OBJECTIVES 1.1 To practice how to test NPN and PNP transistors using multimeter. 1.2 To demonstrate the relationship between collector current
More informationChapter 3: Bipolar Junction Transistors
Chapter 3: Bipolar Junction Transistors Transistor Construction There are two types of transistors: pnp npn pnp The terminals are labeled: E - Emitter B - Base C - Collector npn 2 Transistor Operation
More informationChapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering
MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Bipolar Transistor Construction npn BJT Transistor Structure npn BJT I = I + E C I B V V BE CE = V = V B C V V E E Base-to-emitter
More informationTechnological Studies. - Applied Electronics (H) TECHNOLOGICAL STUDIES HIGHER APPLIED ELECTRONICS. Transistors. Craigmount High School 1
TECHNOLOGICAL STUDIES HIGHER APPLIED ELECTRONICS Transistors Craigmount High School 1 APPLIED ELECTRONICS Outcome 1 - Design and construct electronic systems to meet given specifications When you have
More informationTransistors and Applications
Chapter 17 Transistors and Applications DC Operation of Bipolar Junction Transistors (BJTs) The bipolar junction transistor (BJT) is constructed with three doped semiconductor regions separated by two
More informationITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections
ITT Technical Institute ET215 Devices 1 Unit 6 Chapter 3, Sections 3.7-3.9 Chapter 3 Section 3.7 The Bipolar Transistor as a Switch Objectives: Explain how a transistor can be used as a switch 1. Compute
More informationLab 4. Transistor as an amplifier, part 2
Lab 4 Transistor as an amplifier, part 2 INTRODUCTION We continue the bi-polar transistor experiments begun in the preceding experiment. In the common emitter amplifier experiment, you will learn techniques
More informationPHYS225 Lecture 6. Electronic Circuits
PHYS225 Lecture 6 Electronic Circuits Transistors History Basic physics of operation Ebers-Moll model Small signal equivalent Last lecture Introduction to Transistors A transistor is a device with three
More informationSome frequently used transistor parameter symbols and their meanings are given here.
When you have completed this exercise, you will be familiar with several transistor parameter symbols. You will verify your knowledge with a list of common transistor parameter symbols and meanings. Some
More informationDiscrete Op-Amp Kit MitchElectronics 2019
Discrete Op-Amp Kit MitchElectronics 2019 www.mitchelectronics.co.uk CONTENTS Introduction 3 Schematic 4 How It Works 5 Materials 9 Construction 10 Important Information 11 Page 2 INTRODUCTION Even if
More informationA.M. WEDNESDAY, 19 May minutes
Candidate Name Centre Number Candidate Number 0 GCSE 293/02 ELECTRONICS MODULE TEST E1 HIGHER TIER AM WEDNESDAY, 19 May 2010 45 minutes For s use Total Mark ADDITIONAL MATERIALS In addition to this examination
More informationELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT)
ELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT) Objectives: The experiments in this laboratory exercise will provide an introduction to the BJT. You will use the Bit Bucket breadboarding system
More informationECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model
Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand
More information= V IN. and V CE. = the supply voltage 0.7 V, the transistor is on, V BE. = 0.7 V and V CE. until saturation is reached.
Switching Circuits Learners should be able to: (a) describe and analyse the operation and use of n-channel enhancement mode MOSFETs and npn transistors in switching circuits, including those which interface
More informationElectronic Devices. Floyd. Chapter 7. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd
Electronic Devices Ninth Edition Floyd Chapter 7 Power Amplifiers A power amplifier is a large signal amplifier that produces a replica of the input signal on its output. In the case shown here, the output
More informationElectronics Fundamentals BIPOLAR TRANSISTORS. Construction, circuit symbols and biasing examples for NPN and PNP junction transistors.
IPOLA TANSISTOS onstruction, circuit symbols and biasing examples for NPN and PNP junction transistors Slide 1 xternal bias voltages create an electric field, which pulls electrons (emitted into the base
More informationAn Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005
An Introduction to Bipolar Junction Transistors Transistors Transistors are three port devices used in most integrated circuits such as amplifiers. Non amplifying components we have seen so far, such as
More informationEIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices
EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
More informationDarlington Transistors
Features: Designed for general-purpose amplifier and low speed switching applications Collector-Emitter sustaining voltage V CEO (sus) = 60 V (Minimum) - TIP45 = 80 V (Minimum) - TIP4, TIP46 = 00 V (Minimum)
More informationPHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS
PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS Due Date (NOTE CHANGE): Thursday, Nov 12 th @ 5 pm; Late penalty in effect! Most active electronic devices are based on the transistor as the fundamental
More informationM54516P MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY
-UNIT DARLINGTON TRANSISTOR ARRAY DESCRIPTION is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving
More informationCOLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections.
MOSFETS Although the base current in a transistor is usually small (< 0.1 ma), some input devices (e.g. a crystal microphone) may be limited in their output. In order to overcome this, a Field Effect Transistor
More informationBDW93C, BDW94C Series
Features Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage- CEO (sus) = (Minimum) Collector-emitter saturation voltage- CE (sat) = 2 (Maximum)
More informationSonoma State University Department of Engineering Science Fall 2017
ES-110 Laboratory Introduction to Engineering & Laboratory Experience Saeid Rahimi, Ph.D. Lab 7 Introduction to Transistors Introduction As we mentioned before, diodes have many applications which are
More informationLecture 12. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 12 Bipolar Junction Transistor (BJT) BJT 1-1 Course Info Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays) Location: K2 Time: 1:40 pm Tutorial hours: 2 One tutorial class every week
More informationExercise 2: AC Voltage and Power Gains
Exercise 2: AC Voltage and Power Gains When you have completed this exercise, you will be able to determine voltage and power gains by using oscilloscope. The ac operation schematic for the COMPLEMENTARY
More informationLecture #3 BJT Transistors & DC Biasing
November 2014 Ahmad El-Banna Integrated Technical Education Cluster At AlAmeeria J-601-1448 Electronic Principals Lecture #3 BJT Transistors & DC Biasing Instructor: Dr. Ahmad El-Banna Agenda Transistor
More informationHomework Assignment 12
Homework Assignment 12 Question 1 Shown the is Bode plot of the magnitude of the gain transfer function of a constant GBP amplifier. By how much will the amplifier delay a sine wave with the following
More informationEmitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward
SEMICONDUCTOR PHYSICS-2 [Transistor, constructional characteristics, biasing of transistors, transistor configuration, transistor as an amplifier, transistor as a switch, transistor as an oscillator] Transistor
More informationDC Bias. Graphical Analysis. Script
Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 3 Lecture Title: Analog Circuits
More informationImproving Amplifier Voltage Gain
15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance
More informationECE 310 Microelectronics Circuits
ECE 310 Microelectronics Circuits Bipolar Transistors Dr. Vishal Saxena (vishalsaxena@boisetstate.edu) Jan 20, 2014 Vishal Saxena 1 Bipolar Transistor n the chapter, we will study the physics of bipolar
More informationUNIT E1 (Paper version of on-screen assessment) A.M. WEDNESDAY, 8 June hour
Candidate Name GCSE 46/0 Centre Number Candidate Number 0 ELECTRONICS UNIT E (Paper version of on-screen assessment) A.M. WEDNESDAY, 8 June 20 hour For s use 46 0000 Total Mark ADDITIONAL MATERIALS Information
More informationThe first transistor. (Courtesy Bell Telephone Laboratories.)
Fig. 3.1 The first transistor. (Courtesy Bell Telephone Laboratories.) Fig. 3.2 Types of transistors: (a) pnp; (b) npn. : (a) pnp; : (b) npn Fig. 3.3 Forward-biased junction of a pnp transistor. Fig. 3.4
More informationFigure 1. Block diagram of system incorporating power amplification.
It is often necessary use a circuit which has very low power capabilities to drive a system which has relatively high power requirements. This is typically accomplished by using an amplifier as an intermediate
More informationConcepts to be Covered
Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors
More informationUNIT-III Bipolar Junction Transistor
DC UNT-3.xplain the construction and working of JT. UNT- ipolar Junction Transistor A bipolar (junction) transistor (JT) is a three-terminal electronic device constructed of doped semiconductor material
More informationET215 Devices I Unit 4A
ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic
More informationLecture 9 Transistors
Lecture 9 Transistors Physics Transistor/transistor logic CMOS logic CA 1947 http://www.extremetech.com/extreme/164301-graphenetransistors-based-on-negative-resistance-could-spell-theend-of-silicon-and-semiconductors
More informationUNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The UTC ULN2003R is high-voltage, high-current darlington
More informationElectronic Devices. Floyd. Chapter 6. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd
Electronic Devices Ninth Edition Floyd Chapter 6 Agenda BJT AC Analysis Linear Amplifier AC Load Line Transistor AC Model Common Emitter Amplifier Common Collector Amplifier Common Base Amplifier Special
More informationSEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET
SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change
More informationLM317T Variable Voltage Regulator
LM317T Variable Voltage Regulator The LM317T is a adjustable 3 terminal positive voltage regulator capable of supplying in excess of 1.5 amps over an output range of 1.25 to 37 volts. The device also has
More informationAnalog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.
Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the
More informationPartIIILectures. Multistage Amplifiers
University of missan Electronic II, Second year 2015-2016 PartIIILectures Assistant Lecture: 1 Multistage and Compound Amplifiers Basic Definitions: 1- Gain of Multistage Amplifier: Fig.(1-1) A general
More informationElectronic Devices, 9th edition Thomas L. Floyd. Input signal. R 1 and R 2 are selected to establish V B. If the V CE
3/9/011 lectronic Devices Ninth dition Floyd hapter 5: Transistor ias ircuits The D Operating Point ias establishes the operating point (Q-point) of a transistor amplifier; the ac signal (ma) moves above
More informationThe collector terminal is common to the input and output signals and is connected to the dc power supply. Common Collector Circuit
Common Collector Circuit When you have completed this exercise, you will be able to determine the dc operating conditions of a common collector (CC) transistor circuit by using a typical CC circuit. You
More informationEXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics
Name & Surname: ID: Date: EXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics Objectives: 1. To determine transistor type (npn, pnp),terminals, and material using a DMM 2. To graph the
More informationExercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)
Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Recapitulation and Equivalent Circuit Models Previous slides present first order BJT model. Assumes npn transistor in active mode. Basic relationship
More informationChapter 3 Bipolar Junction Transistors (BJT)
Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,
More informationChapter 11 Output Stages
1 Chapter 11 Output Stages Learning Objectives 2 1) The classification of amplifier output stages 2) Analysis and design of a variety of output-stage types 3) Overview of power amplifiers Introduction
More informationLinear electronic. Lecture No. 1
1 Lecture No. 1 2 3 4 5 Lecture No. 2 6 7 8 9 10 11 Lecture No. 3 12 13 14 Lecture No. 4 Example: find Frequency response analysis for the circuit shown in figure below. Where R S =4kR B1 =8kR B2 =4k R
More informationPhysics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017
Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain
More information10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142
... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)
More informationLecture 3: Transistors
Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,
More informationElectronics EECE2412 Spring 2018 Exam #2
Electronics EECE2412 Spring 2018 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 29 March 2018 File:12262/exams/exam2 Name: General Rules: You
More informationCHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN
CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN Hanoi, 9/24/2012 Contents 2 Structure and operation of BJT Different configurations of BJT Characteristic curves DC biasing method and analysis
More information(a) BJT-OPERATING MODES & CONFIGURATIONS
(a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base
More informationIntroduction PNP C NPN C
Introduction JT Transistors: A JT (or any transistor) can be used either as a switch with positions of on or off, or an amplifier that controls its output at all levels in between the extreme on or off
More informationELEXBO A-Car-Engineering
1 Task: -Construct successively all schematic diagrams and describe your findings. -Describe also the differences between the previous electrical diagram. Construct this electrical circuit and describe
More informationECE321 Electronics I Fall 2006
ECE321 Electronics I Fall 2006 Professor James E. Morris Lecture 11 31 st October, 2006 Bipolar Junction Transistors (BJTs) 5.1 Device Structure & Physics 5.2 I-V Characteristics Convert 5.1 information
More informationExperiment 9 Bipolar Junction Transistor Characteristics
Experiment 9 Bipolar Junction Transistor Characteristics W.T. Yeung, W.Y. Leung, and R.T. Howe UC Berkeley EE 105 Fall 2005 1.0 Objective In this lab, you will determine the I C - V CE characteristics
More informationCommon Sensors. Understand the following sensors: Pull Up sensor Pull Down sensor Potentiometer Thermistor
Common Sensors Understand the following sensors: Pull Up sensor Pull Down sensor Potentiometer Thermistor Pull Up Switch (sensor) VERY low current 12 volt Pull Up Switch (sensor) VERY low current 12 volt
More informationChapter 5 Transistor Bias Circuits
Chapter 5 Transistor Bias Circuits Objectives Discuss the concept of dc biasing of a transistor for linear operation Analyze voltage-divider bias, base bias, and collector-feedback bias circuits. Basic
More informationPHYS 3152 Methods of Experimental Physics I E2. Diodes and Transistors 1
Part I Diodes Purpose PHYS 3152 Methods of Experimental Physics I E2. In this experiment, you will investigate the current-voltage characteristic of a semiconductor diode and examine the applications of
More information2SD1508 2SD1508. Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm High
More informationTransistor electronic technologies
Transistor electronic technologies Bipolar Junction Transistor discrete or integrated circuit discrete = individual component MOS (Metal-Oxide-Silicon) Field Effect Transistor mainly used in integrated
More informationElectronics I Circuit Drawings. Robert R. Krchnavek Rowan University Spring, 2018
Electronics I Circuit Drawings Robert R. Krchnavek Rowan University Spring, 2018 Ideal Diode Piecewise Linear Models of a Diode Piecewise Linear Models of a Diode 1 r d Piecewise Linear Models of a Diode
More informationLecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)
More informationChapter 6 DIFFERENT TYPES OF LOGIC GATES
Chapter 6 DIFFERENT TYPES OF LOGIC GATES Lesson 3 RTL and DTL Gates Ch06L3-"Digital Principles and Design", Raj Kamal, Pearson Education, 2006 2 Outline Resistor transistor logic (RTL) RTL Circuit Characteristics
More informationOperational Amplifiers
Operational Amplifiers November 23, 2017 1 Pre-lab Calculations 1) Calculate the gain for all four circuits in Fig. 3. 2 Introduction Operational Amplifiers? They should call them fun amplifiers. Because,
More information8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE INPUT CIRCUIT DIAGRAM INPUT
8UNIT SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION is eightcircuit outputsourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor
More informationMJD122 MJD127 Complementary power Darlington transistors Features Applications Description
MJD122 MJD127 Complementary power Darlington transistors Features Low collector-emitter saturation voltage Integrated antiparallel collector-emitter diode Applications General purpose linear and switching
More informationN9-1. Gain. Input and Output Impedances. Amplifier Types. Z out. Z in = AH( jω)
Amplification We have seen in earlier notes that a carbon composition resistor continuously dissipates heat to the environment. Most circuit elements do likewise to some degree, including the capacitor
More informationTransistors. electrons N P N holes. Base. An NPN device makes a transistor
NPN Transistor Theory Transistors Transistors are similar to diodes in that they are made up on ntype and ptype silicon. They differ in that Transistors are 3terminal devices (NPN or PNP), Transistors
More informationET 438B Sequential Digital Control and Data Acquisition Laboratory 4 Analog Measurement and Digital Control Integration Using LabVIEW
ET 438B Sequential Digital Control and Data Acquisition Laboratory 4 Analog Measurement and Digital Control Integration Using LabVIEW Laboratory Learning Objectives 1. Identify the data acquisition card
More informationDISCUSSION The best way to test a transistor is to connect it in a circuit that uses the transistor.
Exercise 1: EXERCISE OBJECTIVE When you have completed this exercise, you will be able to test a transistor by forward biasing and reverse biasing the junctions. You will verify your results with an ohmmeter.
More informationSCHEMATIC OF GRAYMARK 808 POWERED BREADBOARD
SCHEMATIC OF GRAYMARK 808 POWERED BREADBOARD 1a white SW1 white 2a TP1 blue TP2 black blue TP3 TP4 yellow TP5 yellow TP6 4 3 8 7 + D1 D2 D5 D6 C1 R1 TP8 Q1 R3 TP12 2 TP18 U2-0-15V C8 9 C2 + TP15 C5 R12
More informationMicroelectronics Exercises of Topic 5 ICT Systems Engineering EPSEM - UPC
Microelectronics Exercises of Topic 5 ICT Systems Engineering EPSEM - UPC F. Xavier Moncunill Autumn 2018 5 Analog integrated circuits Exercise 5.1 This problem aims to follow the steps in the design of
More informationTIP2955 PNP SILICON POWER TRANSISTOR
Designed for Complementary Use with the TIP3055 Series 90 W at 5 C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available B C SOT-93 PACKAGE (TOP VIEW) 1 E 3 Pin is
More informationM54566DP MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
M66DP UNIT DARLINGTON TRANSISTOR ARRAY DESCRIPTION M66DP is sevencircuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
More informationILN2003A HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS TECHNICAL DATA. SCHEMATICS (each Darlington Pair)
TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The ILN2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs
More informationLaboratory 3 W. Liu, by A. Shakouri and K. Pedrotti. Introduction to Bipolar Junction Transistors
University of California at Santa Cruz Jack Baskin School of Engineering EE-171L: Analog Electronics Lab Laboratory 3 W. Liu, by A. Shakouri and K. Pedrotti Name: Partner: Introduction to Bipolar Junction
More informationLow Voltage, High Current Time Delay Circuit
Low Voltage, High Current Time Delay Circuit In this circuit a LM339 quad voltage comparator is used to generate a time delay and control a high current output at low voltage. Approximatey 5 amps of current
More informationDarlington Transistors
Features: Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126
More informationLecture 9. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 9 ipolar Junction Transistor (JT) JT 1-1 Outline ontinue JT JT iasing D analysis Fixed-bias circuit mitter-stabilized bias circuit oltage divider bias circuit D bias with voltage feedback circuit
More information4 Transistors. 4.1 IV Relations
4 Transistors Due date: Sunday, September 19 (midnight) Reading (Bipolar transistors): HH sections 2.01-2.07, (pgs. 62 77) Reading (Field effect transistors) : HH sections 3.01-3.03, 3.11-3.12 (pgs. 113
More informationo Semiconductor Diode Symbol: The cathode contains the N-type material and the anode contains the P-type material.
Cornerstone Electronics Technology and Robotics I Week 16 Diodes and Transistor Switches Administration: o Prayer o Turn in quiz Review: o Design and wire a voltage divider that divides your +9 V voltage
More informationM54534P/FP MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
MITSUBISI SEMICONDUCTOR MP/FP -UNIT 2 TRANSISTOR ARRAY WIT CAMP DIODE AND STROBE DESCRIPTION MP and MFP are six-circuit transistor arrays. The circuits are made of NPN transistors. Both
More informationECE 454 Homework #1 Due 11/28/2018 This Wednesday In Lab
ECE 454 Homework #1 Due 11/28/2018 This Wednesday In Lab Design the Darlington push-pull amplifier specified in Lab 1: You will build this amplifier for Lab 1 so use parts that are available in the lab.
More information4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.
More informationLecture (06) BJT Amplifiers 3
Lecture (06) BJT Amplifiers 3 By: Dr. Ahmed ElShafee ١ THE COMMON COLLECTOR AMPLIFIER An emitter follower circuit with voltage divider bias is shown in Figure, the input signal is capacitively coupled
More information10. SINGLE-SUPPLY PUSH-PULL AMPLIFIER
0. SNGE-SUY USH-U AMFE The push-pull amplifier circuit as discussed in section-9 requires a dual power supply. t can be tailored to operate on a single supply as illustrated in Figure 0.. n this case the
More informationBasic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-1 Transistor
More information