Sonoma State University Department of Engineering Science Fall 2017

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1 ES-110 Laboratory Introduction to Engineering & Laboratory Experience Saeid Rahimi, Ph.D. Lab 7 Introduction to Transistors Introduction As we mentioned before, diodes have many applications which are based on the fact that diodes conduct in one direction and not the other. In general a diode consists of a junction between two dis-similar semiconducting materials, or the junction between a metal and a semiconductor. The junction acts like a barrier or a gate which allows electric current to go through only in one direction. What if we create devices made up of two or more junctions? That is how transistors are made! What if we connect many transistors on a chip in sophisticated patterns? That is how Integrated Circuits (ICs) are made. In order to understand the structure of transistors, one needs to understand the properties of semiconducting materials: Silicon (Si), Germanium (Ge), Gallium Arsenide (GaAs), etc. These topics are covered in more advanced electronic courses. For now, it is sufficient to note that semiconducting materials are generally divided into three categories: (i) (ii) (iii) Intrinsic: the material is pure and void of impurities. Intrinsic semiconductors are generally poor conductors. n-type: impurities have been introduced into the material. The impurities have more electrons in their outer atomic shells compared to the host atoms. By adjusting the concentration of additional electrons, we can adjust their conductivity. p-type: impurities have been introduced into the material. The impurities have fewer electrons in their outer atomic shells. By adjusting the concentration of lack of electrons (holes), we can adjust their conductivity. A variety of sophisticated electronic devices have been designed and manufactured using various arrangements of layers of n-type, p-type, and intrinsic materials. Transistors are an important group of electronic devices and are divided into two general categories: Bipolar Junction Transistors (BJT) and Field-Effect Transistors (FET). The latter is divided into several different sub categories (JFET, MOSFET, etc.). Each type is manufactured in a variety of forms and sizes and the choice of a particular transistor is based on the required parameters, which include current and voltage amplification properties, switching speed, frequency response, power ratings, cost, etc. In this laboratory we will primarily use BJT Transistors, which in their simplest form consist of two junctions between n-type and p-type materials, p-n-p or n-p-n (also indicated by PNP or NPN). Transistors are commonly and abundantly used in many analog and digital integrated circuits. Today we will start with a single transistor. In order to achieve higher amplification rates we can combine two or more transistors. 1

2 Specific transistors are designed for voltage amplification, current amplification, power amplification, or for switches. Depending on the type of applications, various physical sizes, shapes and packaging are utilized. Some packaging types are described in the following diagram. From left: TO-92; TO-18; TO-220, and TO-3 (TO stands for Transfer Outline). In general, transistors have three pins. For BJT transistors they are identified as Collector, Base and Emitter. The TO-3 type only has two pins (Base and Emitter) and the metal casing acts as the Collector. For Field-Effect transistors (FET), the pins are called Source, Gate and Drain. The pins are not generally marked and one needs to consult the manufacturer s pin diagrams for identification of E, B, and C. You can find the data sheet of transistors (and other electronic devices) by entering their identification number in a search engine. In general, an input signal is applied to a transistor with the goal of obtaining an output signal which is larger and more pronounced (amplified) than the input. The input and output signals must have a common ground. For example, if the emitter of a transistor is common between the input and the output signals, the arrangement is called a "common emitter" arrangement. Two other configurations are "common base" and "common collector". In this lab we will use a "common emitter" configuration. As we mentioned earlier, BJT transistors come in NPN or PNP configuration. Here we will use NPN transistors in which the collector and emitter are constructed of n-type semiconductors, and the base is made of a p-type semiconductor. The symbol for NPN and PNP transistors are shown below. 2

3 The principle of operation of a common emitter transistor amplifier is to apply a small current/voltage to its base and obtain an amplified current/voltage at its collector. When used as a switch, a small base current turns on a much larger collector-emitter current. When used as an amplifier, a small AC or DC input voltage/current will be amplified at the output. For example, an audio amplifier has two stages of amplification. In the first step, the input voltage is amplified (preamplifier), and in the second stage the current is amplified. The current amplification is necessary for driving large speakers consisting of large magnets and coils. Amplification concept: a small base current (I B ) results in a large collector current (I C ). The base current/voltage could be a small current/voltage generated by an electronic sensor. The transistor is connected to a source of power (battery or power supply). When a base current I B is detected, the transistor switches on and allows a larger current I C to flow from the power supply through the device/load into the ground. The magnitude of the large I C depends on the magnitude of the small I B. For example, for a transistor with a current gain of 50, a 0.4 ma base current leads to a 20 ma collector current (50 x 0.4 = 20) as shown in the diagram below. The figure illustrates the graphical relationship between the base current and the collector current of a transistor. Transistors can amplify both DC and AC current. AC current in the base and collector are referred to as i b and i c. A transistor is referred to as a switch when a small current i b switches on a larger current i c. For transistor switches, i c is chosen in the plateau region (saturation) of the i C vs. V CE diagram. The switch is off when the base current is too small or zero, and the switch is on when the base current is sufficiently large. The diagram shows the plateau regions for a few different base current values. For voltage amplification, the base current is kept in its active range, where is the high slope region before reaching the plateau. The details of operation of transistors as switches and voltage/current amplifiers will be covered in more advanced electronic courses. A Simple Transistor Switch Here we use a transistor as a switch: Suppose that you have a very small current available to you (through a sensor or similar device) and your goal is to turn on a light, a motor or run a device which requires a large amount of power. Clearly you may not use the small current to do the job. However, you can utilize a transistor which is connected to a large source of power. You will use the small current to switch the transistor on. 3

Apply a small current to the base of the transistor and observe that it allows a larger current from the 5-V power supply to go through the LED to the ground.

4 Apply a small current to the base of the transistor and observe that it allows a larger current from the 5-V power supply to go through the LED to the ground. Note that the base current itself is too small to drive an LED. The size and type of the transistor is chosen depending on the voltage and the current (recall that power = I V). We will use a low-power (or 2N2222) NPN transistor. When viewing the flat side of the transistor, the pins from the left are E, B, and C. We supply a small current to the base in µa-range, and observe a current in the ma range turns on the LED. The current gain of the transistor is defined to be β = I C / I B which is typically around 100. Note that the transistor gain for inexpensive transistors could vary significantly from one device to another. For this transistor, the power dissipated in the transistor must be less than 500 mw: I C V CE < 500 mw. Search for the specification sheet of your transistor and record its important characteristics in the following table: Transistor type ID number Maximum I C Maximum power Measurement 1: Construct the circuit shown below. Apply a small voltage V 1 from the power supply. In order to make the base current small, we connect a large resistor in series. For V 1 = 2 V, the current through the 20 kω resistor will be less than 0.1 ma. The larger voltage V 2 is supplied by the fixed 5-V power supply of your Discovery Scope or another battery/power supply. Make sure your circuit has one common ground. Slowly vary the base voltage V 1 from zero to about 2 volts and observe the voltage at which the LED turns on brightly. Record the voltage V 1 at which the LED switched on. Measure the base current I B and the collector current I C. Monitor the voltage across the resistors and use Ohm s law to calculate current values. Next, instead of V 1 use a different mechanism to supply a small base current: Your body! Disconnect V 1 and touch the left end of the base resistor R 1 and observe that the LED shines dimly. Your touch could supply about 5 µa to the base, which could switch on the transistor and provide a collector current of 0.5 ma (assuming a current gain of 100). As usual, you can choose slightly different resistor values if you do not have the exact resistors in your tool box. Use smaller resistors and see if the LED becomes brighter. You can use your Discovery Scope s DC output for powering the transistor. The idea is to start with zero voltage at the base of the transistor and increase it until the transistor switches on and illuminates the LED. Make a record of the voltages and base and collector current values in your lab book 4

5 R2 200Ohm_5% V2 LED1 V1 1.2 V R1 20kOhm_5% B C E Analysis Record the value of V 1 for which the LED turns on brightly. Using a multimeter measure the following voltages: (i) V R1, the voltage across R 1, (ii) V BE, (iii) V R2, the voltage across R 2, (iv) V LED, the voltage across LED, and finally, (v) V CE. Record the measurements in a table, and verify that: 1. V 1 = V R1 + V BE 2. V 2 = V R2 + V LED +V CE V R1 V BE V 1 V R1 + V BE % error V R2 V LED V CE V 2 V R2 + V LED +V CE % error 3. Using Ohm's law, calculate the current through resistors R 1 and R 2. These are I B and I C, respectively. 4. Calculate the current gain of this transistor, β = I C / I B. 5. Calculate the power dissipated in the transistor P = I C V CE. Compare the result with the power rating of the transistor (0.5 W). I B I C β = I C / I B P = I C V CE A Touch Sensor In part 1 you observed that a base current as small as a fraction of a ma can switch on a transistor and deliver sufficient power to an LED and turn it on. In this part of the experiment we wish to construct a sensor that will turn the LED on simply by touching a wire. We can increase the sensitivity of this touch sensor device by connecting two or more transistors so that the amplified output of one transistor is fed into the input of a second transistor. This process can result into a huge amplification of the minute current provided to the base of the first 5

6 transistor simply by touching it. In this method two or more transistors are connected in a formation called Darlington pair connections. Ideally, the current gain of a Darlington transistor pair is equal to the product of the gains of each device. However, the actual gain may be less than the product of two gains. Connecting the third and the fourth transistors in Darlington configuration will further increase the sensitivity of the circuit, which means the LED will turn on (perhaps dimly) in response to the extremely low base current. However, too much amplification could deliver a power beyond the maximum rated power and burn the transistors. In a Darlington combination, we simply connect the emitter of the first transistor to the base of the second transistor. This combination will act as a single transistor as shown below. Darlington pair transistors are available commercially. Here we test the idea! C B Q2 Measurement 2: Combine two transistors in the following Darlington configuration. If you do not see the desired effect, then add one more transistor. In the unlikely event that you still do not get the touch sensor to work, add one more transistor. We can treat this combination as a single transistor and connect the LED and resistors similar to part 1. Note that the emitter of the first transistor is connected to the base of the next transistor. Bring your finger close to the sensor tip and observe the LED light dimly. Touch the sensor tip and observe the increased light intensity. You might see that the LED lights up momentarily and turns off after a short moment. This could happen because you discharge the charge accumulated on your body after touching the wire. In order to keep the LED on you might need to rub the bottom of your shoes to the floor. You can also touch the +5 volt source with one hand and the sensor with the other. The LED should light up brightly. Can you explain why? Ask your instructor if you are not sure! Place the sensor tip on a piece of paper and touch the other side of the paper and observe the LED light. You can create your own sensor applications using this configuration! You can connect four transistors for high sensitivity. E V1 R1 200Ohm_5% LED1 C Sensor Tip R2 20kOhm_5% B Q2 Q3 E Q4 6

7 Caution: Each transistor in this cascading configuration draws more current than the previous transistor. Q 4 carries the maximum current. Therefore, it is important not to allow too much current to go through the lower transistors. Exceeding the power rating of these transistors will destroy them. You must use transistors with high power ratings if you wish to turn motors on or draw large amounts of current. Light and Dark Detector Circuits (Optional) Each of the following two circuits uses a single transistor. One is a "Light" detector and the other is a "Dark" detector. Photo resistors are used as photodetectors for controlling the base current. A photo resistor is included in your toolbox. You can try these two simple circuits at home. Ask your instructor to explain why one circuit detects light and the other detects dark environment. The location of the photo resistor is chosen depending on whether it is desired to turn the transistor switch on in light or dark conditions. In each case the LED turns on when there is light or dark, respectively. Before trying the circuits, use your multimeter to measure the resistance of the photo resistor under dark and light conditions. Shine a flashlight on it and observe the dramatic change in the resistance of the element when you shine strong light on it. Record the readings in your lab book. This is a fun experiment. Enjoy!! Light Detector V1 Dark Detector V2 R1 200Ohm_1% R3 1.0kOhm_5% R2 200Ohm_1% Photoresistor1 LED1 5k 50% LED2 Q2 10k 50% Photoresistor2 Note: Relays are also used as switches. However, transistor switches are preferred when a high switching speed is desired. Relays are appropriate for on/off situations, but they are too bulky and are not capable of switching fast! 7

Home Map Projects Construction Soldering Study Components 555 Symbols FAQ Links

1 of 7 7/3/2010 10:15 μμ Home Map Projects Construction Soldering Study Components 555 Symbols FAQ Links This page explains the operation of transistors in circuits. Practical matters such as testing,