The first transistor. (Courtesy Bell Telephone Laboratories.)
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1 Fig. 3.1 The first transistor. (Courtesy Bell Telephone Laboratories.)
2 Fig. 3.2 Types of transistors: (a) pnp; (b) npn. : (a) pnp; : (b) npn
3 Fig. 3.3 Forward-biased junction of a pnp transistor.
4 Fig. 3.4 Reverse-biased junction of a pnp transistor.
5 Fig. 3.5 Majority and minority carrier flow of a pnp transistor.
6 Fig. 3.6 Notation and symbols used with the common-base configuration: (a) pnp transistor; (b) npn transistor. Input section Output section
7 Fig. 3.6 (continued) Notation and symbols used with the common-base configuration: (a) pnp transistor; (b) npn transistor.
8 Fig. 3.7 Input or driving point characteristics for a common-base silicon transistor amplifier.
9 Fig. 3.8 Output or collector characteristics for a common-base transistor amplifier.
10 Fig. 3.9 Reverse saturation current.
11 Fig Developing the equivalent model to be employed for the base-to-emitter region of an amplifier in the dc mode.
12 Fig Establishing the proper biasing management for a common-base pnp transistor in the active region.
13 Fig Basic voltage amplification action of the common-base configuration.
14 Fig Notation and symbols used with the common-emitter configuration: (a) npn transistor; (b) pnp transistor.
15 Fig (continued) Notation and symbols used with the common-emitter configuration: (a) npn transistor; (b) pnp transistor.
16 Fig Characteristics of a silicon transistor in the common-emitter configuration: (a) collector characteristics; (b) base characteristics.
17 Fig Circuit conditions related to I CEO.
18 Fig Piecewise-linear equivalent for the diode characteristics of Fig. 3.14b.
19 Fig Determining ac and dc from the collector characteristics.
20 Fig Characteristics in which ac is the same everywhere and ac = dc.
21 Fig Determining the proper biasing arrangement for a common-emitter npn transistor configuration.
22 Fig Notation and symbols used with the common-collector configuration: (a) pnp transistor; (b) npn transistor.
23 Fig Common-collector configuration used for impedance-matching purposes.
24 Fig Defining the linear (undistorted) region of operation for a transistor.
25 Fig Transistor specification sheet.
26 Fig (continued) Transistor specification sheet.
27 Fig (continued) Transistor specification sheet.
28 Fig Curve tracer response to 2N3904 npn transistor.
29 Fig Determining ac for the transistor characteristics of Fig at I C = 7 ma and V CE = 5 V.
30 Fig Transistor tester. (Courtesy of B+K Precision.)
31 Fig Checking the forward-biased base-to-emitter junction of an npn transistor.
32 Fig Checking the reverse-biased base-to-collector junction of an npn transistor.
33 Fig Various types of general-purpose or switching transistors: (a) low power; (b) medium power; (c) medium to high power.
34 Fig (continued) Various types of general-purpose or switching transistors: (a) low power; (b) medium power; (c) medium to high power.
35 Fig (continued) Various types of general-purpose or switching transistors: (a) low power; (b) medium power; (c) medium to high power.
36 Fig Transistor terminal identification.
37 Fig Internal construction of a Fairchild transistor in a TO-92 package. (Courtesy Fairchild Camera and Instrument Corporation.)
38 Fig Type Q2T2905 Texas Instruments quad pnp silicon transistor: (a) appearance; (b) pin connections. (Courtesy Texas Instruments Incorporated.)
39 Fig Network employed to obtain the collector characteristics of the Q2N2222 transistor.
40 Fig Collector characteristics for the transistor of Fig
41 Fig Ideal collector characteristics for the transistor of Fig
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