Prof. Paolo Colantonio a.a
|
|
- Leo Morton
- 6 years ago
- Views:
Transcription
1 Prof. Paolo olantonio a.a
2 ipolar transistors are one of the main building blocks in electronic systems They are used in both analogue and digital circuits They incorporate two pn junctions and are sometimes known as bipolar junction transistors or JTs Here will refer to them simply as bipolar transistors onstruction Two polarities: npn pnp Prof. Paolo olantonio 2 23
3 While control in a FET is due to an electric field, control in a bipolar transistor is generally considered to be due to an electric current urrent into one terminal determines the current between two others ipolar transistors are 3 terminal devices collector (c) base (b) emitter (e) The base is the control input Diagram illustrates the notation used for labelling voltages and currents Prof. Paolo olantonio 3 23
4 Realization by growth The device is growth by strengthening a semiconductor. During the operation different doping materials (acceptor or donor) are added to realize the p orn regions. Realization by alloy On the two faces of a semiconductor (e.g. n Ge) are placed two globe of doping material (e.g. Indium) which melt in the semiconductor when the temperature is increased. During the cooling the regions where the Indium was melt becomes p type Planar realization In the semiconductor substrate, by using photolithographic windows, a doping material is diffused to realize the base and the emitter. The external contacts are realized by metal deposition Prof. Paolo olantonio 4 23
5 Relationship between the collector and the base currents in a bipolar transistor characteristic is approximately linear magnitude of collector current is generally many times that of the base current the device provides current gain We will consider npn transistors pnp devices are similar but with different polarities of voltage and currents When using npn transistors collector is normally more positive than the emitter V E might be a few volts device resembles two back to back diodes but has very different characteristics with the base open circuitnegligible currentflowsfromthe collector to the emitter Prof. Paolo olantonio 5 23
6 onsider what happens when a positive voltage is applied to the base (with respect to the emitter) This forward biases the base emitter junction The base region is lightly doped and very thin ecause it is lightly doped, the current produced is mainly electrons flowing from the emitter to the base ecause the base region is thin, while the base collector is reverse biased, most of the electrons entering the base get swept across the base collector junction into the collector This produces a collector current that is much larger than the base current this gives current amplification Prof. Paolo olantonio 6 23
7 Assuming the current and voltage references as reported in the figure, the current in the collector can be expressed as: I I I 0 E I E v E I I - v E v - - eing the large signal current amplification factor I I0 I E I 0 the reverse bias current of the ollector ase junction In general, assuming the base emitter junction forward biased, the collector current can be expressed as: I IE IO 1e V V T Prof. Paolo olantonio 7 23
8 I I I 0 E y using the Kirchhoff current law, it is possible to write: I I IE 0 I E v E I I - v E v - - ombining the two relationships, it is possible to relate the output current I to the controlling current I : eing I I I I I E0 I I 1 I 1 0 E0 0 I 1 I I E0 The reverse saturation current when the base is open (I =0) The large signal current amplification gain Prof. Paolo olantonio 8 23
9 Thus the behaviour can be described by the current gain, (h fe ) or by the transconductance, g m of the device (accounting for the diode behavior of the baseemitter junction) I I h I E0 fe Prof. Paolo olantonio 9 23
10 The circuit shows a simple amplifier R is used to bias the transistor by injecting an appropriate base current is a coupling capacitor and is used to couple the A signal while preventing external circuits from affecting the bias This is an A coupled amplifier Prof. Paolo olantonio 10 23
11 Transistors can be used in a number of configurations Most common is as shown Emitter terminal is common to input and output circuits This is a common emitter (E) configuration We will look at the characteristics of the device in this configuration Prof. Paolo olantonio 11 23
12 The input takes the form of a forward biased pn junction The input characteristics are therefore similar to those of a semiconductor diode I[ A] V [V] E V [V] E Prof. Paolo olantonio 12 23
13 The output characteristics can be divided in three regions Region near to the origin is the saturation region, which is normally avoided in linear circuits Slope of lines in the active region represents the output resistance Saturation region I[mA] Active region I E0 I =700 A 600A 500A 400A 300A 200 A 100A 0 reakdown region V [V] E Prof. Paolo olantonio 13 23
14 an be described by either the current gain or by the transconductance D current gain h FE or dc is given by A current gain h fe is given by h dc fe h I I FE V E I I const 1 0 I I I I I I I Assuming h FE h h I I h h FE fe 0 fe FE I I 0 0 I I I I I I I 0 I I h h fe FE h fe 1 h FE FE I0 I I h 1 I Prof. Paolo olantonio 14 23
15 +V I c [ma] R L I V E V R L 20 r sat 200μA 160μA 120μA 80μA r sat nω V E E I E 10 40μA 20μA V RL I VE V 0.5 V ce [v] In saturation both emitter and collector junctions are forward biased Increasing the bias current, the collector current is practically unaffected I sat, V R L, 0.2V Prof. Paolo olantonio V E sat
16 +V I c [ma] R L I V R L 200μA 160μA 120μA V E 20 80μA V E E I E 10 40μA 20μA V RL I VE V 0.5 V ce [v] In the active region emitter base junction is forward biased collector base junction is reverse biased I I h FE VE V RL I Prof. Paolo olantonio 16 23
17 The interdicted region is defined as the region for which I E =0 I I I I 0 E 0 Saturation region +V I[mA] Active region V 1 R 1 V E R L I E = I E0 I =700 A 600A 500A 400A 300A 200 A 100A 0 reakdown region V [V] E In order to have I E =0, it is required a small positive voltage V E (0.1V for Ge, 0 for Si) Prof. Paolo olantonio 17 23
18 The phototransistor is quite similar to the photodiode I Radiation I n J IL> V E n J E E V E Usually it is used in E configuration with open base (I =0) 1 I I I O The incident radiation increase the saturation reverse current I O +I L There is an advantage with respect to the photodiode, due to the multiplying factor (1+>>1) If the base is not open 1 I I I I O L Prof. Paolo olantonio 18 23
19 The analysis of a circuit containing a JT typically requires to study two mixed regime, due to the presence of both D and A signals Assuming a linear behavior (i.e. small signal), we can adopt the superposition principle It is convenient to look at its D (or quiescent) behaviour separately from its A (or small signal) behaviour D Analysis Only D sources (I or V) are considered It is adopted to determine the quiescent (device) bias point R L V i A Analysis Only A sources (I or V) are considered It is adopted to determine the variation of the electrical parameters (I and V) in the neighborhood of the operating point (i.e. Taylor approximation) i v I R 1 + v E - v E Prof. Paolo olantonio 19 23
20 Applying the Kirchhoff voltage law at the input and output mesh V vi ir ve R L i V i RL ve i R I i R V v V v V I I E E I i R V v L E E v I + v E - v E Thus separating the D from the A components, it follows D A V I R V I E V I R V L E v i R v i b be 0 icr L vce Prof. Paolo olantonio 20 23
21 onsider the following circuit R V R 2 1 and 2 are two D blocking capacitance R L is the loading impedance I 1 I npn R L E I E V i D analysis The capacitances are considered OPEN circuits A analysis The capacitances are considered SHORT circuits Prof. Paolo olantonio 21 23
22 V Applying the Kirchhoff voltage law at the input mesh R V R I VE R I Applying the Kirchhoff voltage law at the output mesh I npn V R I VE E I E I[mA] Static load line V / R I[ A] V / R I Q I Q Q I Q V EQ V V [V] E 0 V EQ V V [V] E Prof. Paolo olantonio 22 23
23 The D block capacitance are assumed short circuit The D bias V DD is not varying thus it is equivalent (A) as a virtual GND I I npn v R // R i ce L c V i R E I E R R L v be v i I[mA] Dynamic load line Static load line V / R I[ A] i b V / R i c R// R L I Q t I Q Q t V EQ V V [V] E 0 V EQ V V [V] E v be v ce t t Prof. Paolo olantonio 23 23
BIPOLAR JUNCTION TRANSISTORS (BJTs) Dr Derek Molloy, DCU
IPOLAR JUNCTION TRANSISTORS (JTs) Dr Derek Molloy, DCU What are JTs? Two PN junctions joined together is a JT Simply known as a transistor! ipolar? Current carried by electrons and holes Will see FETs
More informationTransistors. Bipolar Junction transistors Principle of operation Characteristics. Field effect transistors Principle of operation Characteristics
Transistors ipolar Junction transistors Principle of operation haracteristics Field effect transistors Principle of operation haracteristics ntroduction Radio based on vacuum tubes Fundamental building
More informationUniversità degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.
Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo olantonio A.A. 2015-16 ias issues The D bias point is affected by thermal issue due to the active
More informationElectronics Fundamentals BIPOLAR TRANSISTORS. Construction, circuit symbols and biasing examples for NPN and PNP junction transistors.
IPOLA TANSISTOS onstruction, circuit symbols and biasing examples for NPN and PNP junction transistors Slide 1 xternal bias voltages create an electric field, which pulls electrons (emitted into the base
More informationBJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1
BJT Bipolar Junction Transistor Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com The Bipolar Junction Transistor is a semiconductor device which
More informationLecture 12. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 12 Bipolar Junction Transistor (BJT) BJT 1-1 Course Info Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays) Location: K2 Time: 1:40 pm Tutorial hours: 2 One tutorial class every week
More informationUNIT-III Bipolar Junction Transistor
DC UNT-3.xplain the construction and working of JT. UNT- ipolar Junction Transistor A bipolar (junction) transistor (JT) is a three-terminal electronic device constructed of doped semiconductor material
More informationBipolar Junction Transistors
Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal
More informationChapter 3. Bipolar Junction Transistors
Chapter 3. Bipolar Junction Transistors Outline: Fundamental of Transistor Common-Base Configuration Common-Emitter Configuration Common-Collector Configuration Introduction The transistor is a three-layer
More informationProf. Paolo Colantonio a.a
Prof. Paolo Colantonio a.a. 20 2 Field effect transistors (FETs) are probably the simplest form of transistor, widely used in both analogue and digital applications They are characterised by a very high
More informationEE 434 Lecture 21. MOS Amplifiers Bipolar Devices
434 ecture MOS Amplifiers ipolar Devices Quiz 3 The quiescent voltage across the 5K resistor in the circuit shown was measured to be 3. ) Determine the quiescent output voltage ) Determine the small signal
More informationTransistor Characteristics
Transistor Characteristics Topics covered in this presentation: Transistor Construction Transistor Operation Transistor Characteristics 1 of 15 The Transistor The transistor is a semiconductor device that
More informationfiziks Institute for NET/JRF, GATE, IIT-JAM, M.Sc. Entrance, JEST, TIFR and GRE in Physics
nstitute for NT/JF, GAT, T-JAM, M.Sc. ntrance, JST, TF and G in Physics 3. ipolar Junction Transistors 3.1 Transistor onstruction Transistor is a three-layer semiconductor device consisting of either two
More informationAn Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005
An Introduction to Bipolar Junction Transistors Transistors Transistors are three port devices used in most integrated circuits such as amplifiers. Non amplifying components we have seen so far, such as
More informationLecture 3: Transistors
Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,
More informationElectronic Circuits - Tutorial 07 BJT transistor 1
Electronic Circuits - Tutorial 07 BJT transistor 1-1 / 20 - T & F # Question 1 A bipolar junction transistor has three terminals. T 2 For operation in the linear or active region, the base-emitter junction
More informationUNIT IX ELECTRONIC DEVICES
UNT X ELECTRONC DECES Weightage Marks : 07 Semiconductors Semiconductors diode-- characteristics in forward and reverse bias, diode as rectifier. - characteristics of LED, Photodiodes, solarcell and Zener
More informationTransistors and Applications
Chapter 17 Transistors and Applications DC Operation of Bipolar Junction Transistors (BJTs) The bipolar junction transistor (BJT) is constructed with three doped semiconductor regions separated by two
More informationEE 330 Lecture 18. Characteristics of Finer Feature Size Processes. Bipolar Process
330 Lecture 18 haracteristics of Finer Feature Size Processes ipolar Process How does the inverter delay compare between a 0.5u process and a 0.13u process? DD IN OUT IN OUT SS How does the inverter
More informationBipolar junction transistors.
Bipolar junction transistors. Third Semester Course code : 15EECC202 Analog electronic circuits (AEC) Team: Dr. Nalini C Iyer, R.V. Hangal, Sujata N, Prashant A, Sneha Meti AEC Team, Faculty, School of
More informationChapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering
MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Bipolar Transistor Construction npn BJT Transistor Structure npn BJT I = I + E C I B V V BE CE = V = V B C V V E E Base-to-emitter
More informationTHE METAL-SEMICONDUCTOR CONTACT
THE METAL-SEMICONDUCTOR CONTACT PROBLEM 1 To calculate the theoretical barrier height, built-in potential barrier, and maximum electric field in a metal-semiconductor diode for zero applied bias. Consider
More informationUniversità degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.
Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo Colantonio A.A. 2015-16 Large signal consideration As for the FET, we can use a load line 2
More informationSRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and
More informationCHAPTER 3 THE BIPOLAR JUNCTION TRANSISTOR (BJT)
HAPT 3 TH IPOLA JUNTION TANSISTO (JT) 1 In this chapter, we will: JT Discuss the physical structure and operation of the bipolar junction transistor. Understand the dc analysis of bipolar transistor circuits.
More informationEmitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward
SEMICONDUCTOR PHYSICS-2 [Transistor, constructional characteristics, biasing of transistors, transistor configuration, transistor as an amplifier, transistor as a switch, transistor as an oscillator] Transistor
More informationBipolar Junction Transistor
ESE 211 / Spring 2011 / Lecture 10 Bipolar Junction Transistor Let us first consider general transconductance amplifier loaded with short circuit Transconductance Obviously, power supplies are needed for
More informationEE 330 Lecture 19. Bipolar Devices
330 Lecture 19 ipolar Devices Review from last lecture n-well n-well n- p- Review from last lecture Metal Mask A-A Section - Section Review from last lecture D A A D Review from last lecture Should now
More informationChapter 3 Bipolar Junction Transistors (BJT)
Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,
More informationEE 330 Lecture 16. Comparison of MOS Processes Bipolar Process
330 Lecture 16 omparison of MOS Processes ipolar Process Review from last lecture P-Select Mask p-diffusion p-diffusion A-A Section Note the gate is self aligned!! - Section Review from last lecture n-select
More informationElectronic Devices 1. Current flowing in each of the following circuits A and respectively are: (Circuit 1) (Circuit 2) 1) 1A, 2A 2) 2A, 1A 3) 4A, 2A 4) 2A, 4A 2. Among the following one statement is not
More informationEIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices
EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
More informationThe first transistor. (Courtesy Bell Telephone Laboratories.)
Fig. 3.1 The first transistor. (Courtesy Bell Telephone Laboratories.) Fig. 3.2 Types of transistors: (a) pnp; (b) npn. : (a) pnp; : (b) npn Fig. 3.3 Forward-biased junction of a pnp transistor. Fig. 3.4
More informationTransistor electronic technologies
Transistor electronic technologies Bipolar Junction Transistor discrete or integrated circuit discrete = individual component MOS (Metal-Oxide-Silicon) Field Effect Transistor mainly used in integrated
More informationLecture (06) Bipolar Junction Transistor
Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢ BJT structure The BJT is constructed with three doped semiconductor regions One
More informationPHYS225 Lecture 6. Electronic Circuits
PHYS225 Lecture 6 Electronic Circuits Transistors History Basic physics of operation Ebers-Moll model Small signal equivalent Last lecture Introduction to Transistors A transistor is a device with three
More informationAnalog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.
Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the
More informationThe shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect
Diode as Clamper A clamping circuit is used to place either the positive or negative peak of a signal at a desired level. The dc component is simply added or subtracted to/from the input signal. The clamper
More informationElectronic Circuits Laboratory EE462G Lab #8. BJT Common Emitter Amplifier
lectronic ircuits Laboratory 46G Lab #8 JT ommon mitter Amplifier npn ipolar Junction Transistor JT in a common-emitter configuration ase ollector V _ n p n V _ mitter For most applications the JT is operated
More informationPhysics of Bipolar Transistor
Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power
More informationProf. Anyes Taffard. Physics 120/220. Diode Transistor
Prof. Anyes Taffard Physics 120/220 Diode Transistor Diode One can think of a diode as a device which allows current to flow in only one direction. Anode I F Cathode stripe Diode conducts current in this
More informationModule 04.(B1) Electronic Fundamentals
1.1a. Semiconductors - Diodes. Module 04.(B1) Electronic Fundamentals Question Number. 1. What gives the colour of an LED?. Option A. The active element. Option B. The plastic it is encased in. Option
More informationFigure1: Basic BJT construction.
Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).
More informationFYSE400 ANALOG ELECTRONICS
7.9.016 YS400 ANALOG LTONS LTU 1 ntroduction to ipolar Junction Transistor ircuits 1 NTODUTON The deal urrent-controlled urrent Source efore the detailed analyzation of transistor operation, we should
More informationLecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NPN Bipolar Junction Transistor (BJT)
EE105 Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 utardja Dai Hall (DH) 1 NPN Bipolar Junction Transistor (BJT) Forward Bias Reverse Bias Hole Flow Electron
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS Most of the content is from the textbook: Electronic devices and circuit theory,
More informationChapter Two "Bipolar Transistor Circuits"
Chapter Two "Bipolar Transistor Circuits" 1.TRANSISTOR CONSTRUCTION:- The transistor is a three-layer semiconductor device consisting of either two n- and one p-type layers of material or two p- and one
More informationBipolar Junction Transistors (BJTs) Overview
1 Bipolar Junction Transistors (BJTs) Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s Institute of Technology
More informationAnalog & Digital Electronics Course No: PH-218
Analog & Digital Electronics Course No: PH-218 Lec-5: Bipolar Junction Transistor (BJT) Course nstructors: Dr. A. P. VAJPEY Department of Physics, ndian nstitute of Technology Guwahati, ndia 1 Bipolar
More informationPHYS 3152 Methods of Experimental Physics I E2. Diodes and Transistors 1
Part I Diodes Purpose PHYS 3152 Methods of Experimental Physics I E2. In this experiment, you will investigate the current-voltage characteristic of a semiconductor diode and examine the applications of
More informationIntroduction to semiconductor technology
Introduction to semiconductor technology Outline 7 Field effect transistors MOS transistor current equation" MOS transistor channel mobility Substrate bias effect 7 Bipolar transistors Introduction Minority
More informationPaper-1 (Circuit Analysis) UNIT-I
Paper-1 (Circuit Analysis) UNIT-I AC Fundamentals & Kirchhoff s Current and Voltage Laws 1. Explain how a sinusoidal signal can be generated and give the significance of each term in the equation? 2. Define
More informationDownloaded from
Question 14.1: In an n-type silicon, which of the following statement is true: (a) Electrons are majority carriers and trivalent atoms are the dopants. (b) Electrons are minority carriers and pentavalent
More informationPHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS
PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS Due Date (NOTE CHANGE): Thursday, Nov 12 th @ 5 pm; Late penalty in effect! Most active electronic devices are based on the transistor as the fundamental
More informationCOLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections.
MOSFETS Although the base current in a transistor is usually small (< 0.1 ma), some input devices (e.g. a crystal microphone) may be limited in their output. In order to overcome this, a Field Effect Transistor
More informationTutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers
Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.
More informationElectronics EECE2412 Spring 2017 Exam #2
Electronics EECE2412 Spring 2017 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 30 March 2017 File:12198/exams/exam2 Name: : General Rules:
More informationDiode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR!
Diodes: What do we use diodes for? Lecture 5: Diodes and Transistors protect circuits by limiting the voltage (clipping and clamping) turn AC into DC (voltage rectifier) voltage multipliers (e.g. double
More information5.1 BJT Device Structure and Physical Operation
11/28/2004 section 5_1 BJT Device Structure and Physical Operation blank 1/2 5.1 BJT Device Structure and Physical Operation Reading Assignment: pp. 377-392 Another kind of transistor is the Bipolar Junction
More informationCOE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline
COE/EE152: Basic Electronics Lecture 5 Andrew Selasi Agbemenu 1 Outline Physical Structure of BJT Two Diode Analogy Modes of Operation Forward Active Mode of BJTs BJT Configurations Early Effect Large
More informationECE 310 Microelectronics Circuits
ECE 310 Microelectronics Circuits Bipolar Transistors Dr. Vishal Saxena (vishalsaxena@boisetstate.edu) Jan 20, 2014 Vishal Saxena 1 Bipolar Transistor n the chapter, we will study the physics of bipolar
More informationChapter 2. Bipolar Junction Transistor
Chapter 2 ipolar Junction Transistor 2.0 History The name bipolar is used because both types of carriers namely hole and electron are used in the transistor, as opposed to field effect transistor, which
More informationModule 2. B.Sc. I Electronics. Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli
Module 2 B.Sc. I Electronics Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli BIPOLAR JUNCTION TRANSISTOR SCOPE OF THE CHAPTER- This chapter introduces
More informationPower Semiconductor Devices
TRADEMARK OF INNOVATION Power Semiconductor Devices Introduction This technical article is dedicated to the review of the following power electronics devices which act as solid-state switches in the circuits.
More informationChapter Three " BJT Small-Signal Analysis "
Chapter Three " BJT Small-Signal Analysis " We now begin to examine the small-signal ac response of the BJT amplifier by reviewing the models most frequently used to represent the transistor in the sinusoidal
More informationChapter 3: TRANSISTORS. Dr. Gopika Sood PG Govt. College For Girls Sector -11, Chandigarh
Chapter 3: TRANSISTORS Dr. Gopika Sood PG Govt. College For Girls Sector -11, Chandigarh OUTLINE Transistors Bipolar Junction Transistor (BJT) Operation of Transistor Transistor parameters Load Line Biasing
More informationCHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN
CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN Hanoi, 9/24/2012 Contents 2 Structure and operation of BJT Different configurations of BJT Characteristic curves DC biasing method and analysis
More informationUNIT 3 Transistors JFET
UNIT 3 Transistors JFET Mosfet Definition of BJT A bipolar junction transistor is a three terminal semiconductor device consisting of two p-n junctions which is able to amplify or magnify a signal. It
More informationTransistors. electrons N P N holes. Base. An NPN device makes a transistor
NPN Transistor Theory Transistors Transistors are similar to diodes in that they are made up on ntype and ptype silicon. They differ in that Transistors are 3terminal devices (NPN or PNP), Transistors
More informationAE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015
Q.2 a. By using Norton s theorem, find the current in the load resistor R L for the circuit shown in Fig.1. (8) Fig.1 IETE 1 b. Explain Z parameters and also draw an equivalent circuit of the Z parameter
More informationGechstudentszone.wordpress.com
UNIT 4: Small Signal Analysis of Amplifiers 4.1 Basic FET Amplifiers In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits
More informationLecture 14. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 14 ipolar Junction Transistor (JT) JT 1-1 Outline ontinue JT iasing D analysis Fixed-bias circuit (revision) mitter-stabilized bias circuit oltage divider bias circuit D bias with voltage feedback
More informationR a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)
SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave
More informationLaboratory Four - Bipolar Junction Transistor (BJT)
M/IS 3512 ioelectronics Laboratory Four - ipolar Junction Transistor (JT) Learning Objectives: Know how to differentiate between PNP & NPN JT transistors using a multimeter. e familiar with the operation
More informationMOS Field-Effect Transistors (MOSFETs)
6 MOS Field-Effect Transistors (MOSFETs) A three-terminal device that uses the voltages of the two terminals to control the current flowing in the third terminal. The basis for amplifier design. The basis
More informationBJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
More informationECE 440 Lecture 29 : Introduction to the BJT-I Class Outline:
ECE 440 Lecture 29 : Introduction to the BJT-I Class Outline: Narrow-Base Diode BJT Fundamentals BJT Amplification Things you should know when you leave Key Questions How does the narrow-base diode multiply
More informationTransistor Biasing and Operational amplifier fundamentals. OP-amp Fundamentals and its DC characteristics. BJT biasing schemes
Lab 1 Transistor Biasing and Operational amplifier fundamentals Experiment 1.1 Experiment 1.2 BJT biasing OP-amp Fundamentals and its DC characteristics BJT biasing schemes 1.1 Objective 1. To sketch potential
More informationThe Common Emitter Amplifier Circuit
The Common Emitter Amplifier Circuit In the Bipolar Transistor tutorial, we saw that the most common circuit configuration for an NPN transistor is that of the Common Emitter Amplifier circuit and that
More informationUnit/Standard Number. LEA Task # Alignment
1 Secondary Competency Task List 100 SAFETY 101 Demonstrate an understanding of State and School safety regulations. 102 Practice safety techniques for electronics work. 103 Demonstrate an understanding
More informationBipolar Junction Transistors
ipolar Junction Transistor (JT ipolar Junction Transistors JT is a three-terminal device: emitter (, collector ( and base (. There are two types: pnp-type and npn-type. npn transistor: emitter & collector
More informationBipolar Junction Transistor (BJT)
Bipolar Junction Transistor (BJT) - three terminal device - output port controlled by current flow into input port Structure - three layer sandwich of n-type and p-type material - npn and pnp transistors
More informationCO2005: Electronics I. Transistor (BJT) Electronics I, Neamen 3th Ed. 1
O2005: Electronics The Bipolar Junction Transistor (BJT) Electronics, Neamen 3th Ed. 1 Bipolar Transistor Structures N P 17 10 N D 19 10 N D 15 10 Electronics, Neamen 3th Ed. 2 Forward-Active Mode in the
More informationDepartment of Electrical Engineering IIT Madras
Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or
More informationTransistor fundamentals Nafees Ahamad
Transistor fundamentals Nafees Ahamad Asstt. Prof., EECE Deptt, DIT University, Dehradun Website: www.eedofdit.weebly.com Transistor A transistor consists of two PN junctions formed by sandwiching either
More informationDiode and Bipolar Transistor Circuits
Diode and Bipolar Transistor Circuits 2 2.1 A Brief Review of Semiconductors Semiconductors are crystalline structures in which each atom shares its valance electrons with the neighboring atoms. The simple
More informationUNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press
UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth
More informationExercise 2: Collector Current Versus Base Current
Exercise 2: Collector Current Versus Base Current EXERCISE OBJECTIVE When you have completed this exercise, you will be able to demonstrate the relationship of collector current to base current by using
More informationElectronics I - Physics of Bipolar Transistors
Chapter 5 Electronics I - Physics of Bipolar Transistors B E N+ P N- C B E C Fall 2017 claudio talarico 1 source: Sedra & Smith Thin Base Types of Bipolar Transistors n+ p n- Figure - A simplified structure
More informationUNIT 3: FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are
More informationLecture 4. Reading: Chapter EE105 Fall 2007 Lecture 4, Slide 1 Prof. Liu, UC Berkeley
Lecture 4 OUTLNE Bipolar Junction Transistor (BJT) General considerations Structure Operation in active mode Large-signal model and - characteristics Reading: Chapter 4.1-4.4.2 EE105 Fall 2007 Lecture
More information7. Bipolar Junction Transistor
41 7. Bipolar Junction Transistor 7.1. Objectives - To experimentally examine the principles of operation of bipolar junction transistor (BJT); - To measure basic characteristics of n-p-n silicon transistor
More informationMTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap
MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor transistors for logic and memory Reading: Kasap 6.6-6.8 Vacuum tube diodes 2 Thermionic emission from cathode Electrons collected
More informationThree Terminal Devices
Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering
More informationTechnological Studies. - Applied Electronics (H) TECHNOLOGICAL STUDIES HIGHER APPLIED ELECTRONICS. Transistors. Craigmount High School 1
TECHNOLOGICAL STUDIES HIGHER APPLIED ELECTRONICS Transistors Craigmount High School 1 APPLIED ELECTRONICS Outcome 1 - Design and construct electronic systems to meet given specifications When you have
More informationExercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)
Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Recapitulation and Equivalent Circuit Models Previous slides present first order BJT model. Assumes npn transistor in active mode. Basic relationship
More informationBasic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-1 Transistor
More informationBiasing. Biasing: The DC voltages applied to a transistor in order to turn it on so that it can amplify the AC signal.
D iasing JT iasing iasing: The D voltages applied to a transistor in order to turn it on so that it can amplify the A signal. The D input establishes an operating or quiescent point called the Q-point.
More informationCode No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions
More information