NCS ma 200 MHz Current Feedback Op Amp
|
|
- Ethel Lee
- 6 years ago
- Views:
Transcription
1 . ma 2 MHz Current Feedback Op Amp NCS2 is a. ma 2 MHz current feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The current feedback architecture allows for a superior bandwidth and low power consumption. Features. db Small Signal BW (A V = +2., V O =. V p p ) 2 MHz Typ Slew Rate 4 V/ s Supply Current. ma Input Referred Voltage Noise 4. nv/ Hz THD db (f =. MHz, V O = 2. V p p ) Output Current ma Pin Compatible with EL, LMH72, MAX442 Pb Free Packages are Available Applications Portable Video Line Drivers Radar/Communication Receivers Set Top Box NTSC/PAL/HDTV NORMAILIZED GAIN(dB) Gain = +2 R F =.2k R L = V OUT = 2.V V OUT =.V V OUT = 2.V V OUT =.7V V OUT =.7V.. V OUT =.V Figure. Frequency Response: Gain (db) vs. Frequency Av = +2., R L = NC IN +IN V EE SO 8 D SUFFIX CASE 7 SC 7 (SC 88A) SQ SUFFIX CASE 49A MARKING DIAGRAMS N2 ALYW YA, N2 = NCS2 A = Assembly Location L = Wafer Lot Y = Year W = Work Week M = Date Code = Pb Free Package SOT2 (TSOP ) SN SUFFIX CASE 48 SO 8 PINOUT + (Top View) 8 7 SOT2 /SC7 PINOUT OUT YA M YAYW NC V CC OUT NC V CC V EE 2 + +IN 4 IN (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 2 May, 2 Rev. Publication Order Number: NCS2/D
2 PIN FUNCTION DESCRIPTION Pin (SO 8) Pin (SOT2/SC7) Symbol Function Equivalent Circuit OUT Output V CC ESD OUT V EE 4 2 V EE Negative Power Supply +IN Non inverted Input V CC +IN ESD ESD IN 2 4 IN Inverted Input See Above 7 V CC Positive Power Supply,, 8 N/A NC No Connect V EE V CC +IN OUT IN C C V EE Figure 2. Simplified Device Schematic 2
3 ATTRIBUTES Characteristics ESD Human Body Model Machine Model Charged Device Model Value 2. kv (Note ) 2 V. kv Moisture Sensitivity (Note 2) Level Flammability Rating Oxygen Index: 28 to 4 UL 94 in..8 kv between the input pairs +IN and IN pins only. All other pins are 2. kv. 2. For additional information, see Application Note AND8/D. MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltage V S V DC Input Voltage Range V I V S V DC Input Differential Voltage Range V ID V S V DC Output Current I O ma Maximum Junction Temperature (Note ) T J C Operating Ambient Temperature T A 4 to +8 C Storage Temperature Range T stg to + C Power Dissipation P D (See Graph) mw Thermal Resistance, Junction to Air SO 8 SC7 SOT2 R JA Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. Power dissipation must be considered to ensure maximum junction temperature (T J ) is not exceeded. C/W MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the overheated condition for an extended period can result in device damage. Maximum Power Dissapation (mw) SC7 Pkg SO 8 Pkg SOT2 Pkg Ambient Temperature ( C) Figure. Power Dissipation vs. Temperature
4 AC ELECTRICAL CHARACTERISTICS (V CC = +. V, V EE =. V, T A = 4 C to +8 C, R L = to GND, R F =.2 k, A V = +2., V IN = V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth. db Small Signal. db Large Signal GF.dB. db Gain Flatness Bandwidth A V = +2., V O =. V p p 2 A V = +2., V O = 2. V p p 4 MHz A V = +2. MHz dg Differential Gain A V = +2., R L =, f =.8 MHz.2 % dp Differential Phase A V = +2., R L =, f =.8 MHz. TIME DOMAIN RESPONSE SR Slew Rate A V = +2., V step = 2. V 4 V/ s t s Settling Time.%.% A V = +2., V step = 2. V A V = +2., V step = 2. V t r t f Rise and Fall Time (% 9%) A V = +2., V step = 2. V. ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f =. MHz, V O = 2. V p p, R L = db HD2 2nd Harmonic Distortion f =. MHz, V O = 2. V p p 7 dbc HD rd Harmonic Distortion f =. MHz, V O = 2. V p p 7 dbc IP Third Order Intercept f = MHz, V O = 2. V p p dbm SFDR Spurious Free Dynamic Range f =. MHz, V O = 2. V p p 8 dbc e N Input Referred Voltage Noise f =. MHz 4. nv Hz 8 ns i N Input Referred Current Noise f =. MHz, Inverting f =. MHz, Non Inverting pa Hz 4
5 DC ELECTRICAL CHARACTERISTICS (V CC = +. V, V EE =. V, T A = 4 C to +8 C, R L = to GND, R F =.2 k, A V = +2., V IN = V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE V OS Offset Voltage mv V IO / T Input Offset Voltage Temperature Coefficient. V/ C I IB Input Bias Current +Input (Non Inverting), V O = V Input (Inverting), V O = V (Note 4) A I IB / T Input Bias Current Temperature Coefficient +Input (Non Inverting), V O = V Input (Inverting), V O = V 4 na/ C INPUT CHARACTERISTICS V CM Input Common Mode Voltage Range (Note 4). 4. V CMRR Common Mode Rejection Ratio (See Graph) db R IN Input Resistance +Input (Non Inverting) Input (Inverting) 4. M C IN Differential Input Capacitance. pf OUTPUT CHARACTERISTICS R OUT Output Resistance.2 V O Output Voltage Swing.. V I O Output Current ma POWER SUPPLY V S Operating Voltage Supply V I S Power Supply Current V O = V.. 2. ma PSRR Power Supply Rejection Ratio (See Graph) 7 db 4. Guaranteed by design and/or characterization.
6 AC ELECTRICAL CHARACTERISTICS (V CC = +2. V, V EE = 2. V, T A = 4 C to +8 C, R L = to GND, R F =.2 k, A V = +2., V IN = V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth. db Small Signal. db Large Signal GF.dB. db Gain Flatness Bandwidth A V = +2., V O =. V p p 8 A V = +2., V O =. V p p MHz A V = +2. MHz dg Differential Gain A V = +2., R L =, f =.8 MHz.2 % dp Differential Phase A V = +2., R L =, f =.8 MHz. TIME DOMAIN RESPONSE SR Slew Rate A V = +2., V step =. V V/ s t s Settling Time.%.% A V = +2., V step =. V A V = +2., V step =. V t r t f Rise and Fall Time (% 9%) A V = +2., V step =. V 8. ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f =. MHz, V O =. V p p, R L = db HD2 2nd Harmonic Distortion f =. MHz, V O =. V p p 7 dbc HD rd Harmonic Distortion f =. MHz, V O =. V p p 7 dbc IP Third Order Intercept f = MHz, V O =. V p p dbm SFDR Spurious Free Dynamic Range f =. MHz, V O =. V p p 8 dbc 4 8 ns e N Input Referred Voltage Noise f =. MHz 4. i N Input Referred Current Noise f =. MHz, Inverting f =. MHz, Non Inverting nv Hz pa Hz
7 DC ELECTRICAL CHARACTERISTICS (V CC = +2. V, V EE = 2. V, T A = 4 C to +8 C, R L = to GND, R F =.2 k, A V = +2., V IN = V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE V OS Offset Voltage mv V IO / T Input Offset Voltage Temperature Coefficient. V/ C I IB Input Bias Current +Input (Non Inverting), V O = V Input (Inverting), V O = V (Note ) A I IB / T Input Bias Current Temperature Coefficient +Input (Non Inverting), V O = V Input (Inverting), V O = V 4 na/ C INPUT CHARACTERISTICS V CM Input Common Mode Voltage Range (Note ).. V CMRR Common Mode Rejection Ratio (See Graph) db R IN Input Resistance +Input (Non Inverting) Input (Inverting) 4. M C IN Differential Input Capacitance. pf OUTPUT CHARACTERISTICS R OUT Output Resistance.2 V O Output Voltage Swing..4 V I O Output Current 4 8 ma POWER SUPPLY V S Operating Voltage Supply. V I S Power Supply Current V O = V..9.9 ma PSRR Power Supply Rejection Ratio (See Graph) 7 db. Guaranteed by design and/or characterization. V IN + V OUT R F R L R F Figure 4. Typical Test Setup (A V = +2., R F =.8 k or.2 k or. k, R L = ) 7
8 NORMAILIZED GAIN(dB) Gain = +2 R F =.2k R L = V OUT = 2.V V OUT = 2.V V OUT =.V V OUT =.V NORMALIZED GAIN (db) V OUT =.7V V OUT =.V 9 V OUT =.7V V 2 OUT =.V.... Gain = + R F =.2k R L = V OUT =.V V OUT =.7V V OUT =.7V V OUT =.V Figure. Frequency Response: Gain (db) vs. Frequency Av = +2. Figure. Frequency Response: Gain (db) vs. Frequency Av = +. NORMALIZED GAIN (db) V OUT = 2.V R L = A V = +2 A V = +2 A V = +4 A V = +4 NORMAILIZED GAIN(dB) 9 9 A V = V OUT =.V R L = A V = +4 A V = + A V = +2 A V = +4 A V = + Figure 7. Large Signal Frequency Response Gain (db) vs. Frequency Figure 8. Small Signal Frequency Response Gain (db) vs. Frequency Figure 9. Small Signal Step Response Vertical: mv/div Horizontal: ns/div Figure. Large Signal Step Response Vertical: mv/div Horizontal: ns/div 8
9 DISTORTION (db) THD HD HD2 V OUT = 2V PP R L = 8 Figure. THD, HD2, HD vs. Frequency DISTORTION (db) THD HD HD2 f = MHz R L = V OUT (V PP ) Figure 2. THD, HD2, HD vs. Output Voltage VOLTAGE NOISE (nv/ Hz) 7 ±2.V 4 ±.V 2 FREQUENCY (khz) CMRR (db) k k M M M FREQUENCY (Hz) Figure. Input Referred Noise vs. Frequency Figure 4. CMRR vs. Frequency PSRR(dB) V 2.V.V 7.. DIFFERENTIAL GAIN (%) R L = 4.4MHz.8MHz 2MHz MHz OFFSET VOLTAGE (V) Figure. PSRR vs. Frequency Figure. Differential Gain 9
10 DIFFERENTIAL PHASE ( ) MHz 2MHz.8MHz 4.4MHz.4 R L = OFFSET VOLTAGE (V) CURRENT (ma) C 2 C 4 C POWER SUPPLY VOLTAGE (V) Figure 7. Differential Phase Figure 8. Supply Current vs. Power Supply 8 9 OUTPUT VOLTAGE (V PP ) C 2 C 4 C OUTPUT VOLTAGE (V PP ) A V = +2 f = MHz SUPPLY VOLTAGE (V) k LOAD RESISTANCE ( ) Figure 9. Output Voltage Swing vs. Supply Voltage Figure 2. Output Voltage Swing vs. Load Resistance 8 OUTPUT RESISTANCE ( ).... Figure 2. Output Impedance vs. Frequency GAIN (db) R F =.2k R L = Gain= +2 pf 47pF pf Figure 22. Frequency Response vs. CL
11 M TRANSIMPEDANCE ( ) M k k k.. k Figure 2. Transimpedance (ROL) vs. Frequency
12 General Design Considerations The current feedback amplifier is optimized for use in high performance video and data acquisition systems. For current feedback architecture, its closed loop bandwidth depends on the value of the feedback resistor. The closed loop bandwidth is not a strong function of gain, as is for a voltage feedback amplifier, as shown in Figure 24. GAIN (db) A V = +2 V CC = + V V EE = V R F = k R F =.2 k R F =.8 k 2... Figure 24. Frequency Response vs. R F The. db bandwidth is, to some extent, dependent on the power supply voltages. By using lower power supplies, the bandwidth is reduced, because the internal capacitance increases. Smaller values of feedback resistor can be used at lower supply voltages, to compensate for this affect. Feedback and Gain Resistor Selection for Optimum Frequency Response A current feedback operational amplifier s key advantage is the ability to maintain optimum frequency response independent of gain by using appropriate values for the feedback resistor. To obtain a very flat gain response, the feedback resistor tolerance should be considered as well. Resistor tolerance of % should be used for optimum flatness. Normally, lowering RF resistor from its recommended value will peak the frequency response and extend the bandwidth while increasing the value of RF resistor will cause the frequency response to roll off faster. Reducing the value of RF resistor too far below its recommended value will cause overshoot, ringing, and eventually oscillation. Since each application is slightly different, it is worth some experimentation to find the optimal RF for a given circuit. A value of the feedback resistor that produces. db of peaking is the best compromise between stability and maximal bandwidth. It is not recommended to use a current feedback amplifier with the output shorted directly to the inverting input. Printed Circuit Board Layout Techniques Proper high speed PCB design rules should be used for all wideband amplifiers as the PCB parasitics can affect the overall performance. Most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. A space (/ is plenty) should be left around the signal lines to minimize coupling. Also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. Line lengths less than /4 are recommended. Video Performance This device designed to provide good performance with NTSC, PAL, and HDTV video signals. Best performance is obtained with back terminated loads as performance is degraded as the load is increased. The back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage. ESD Protection This device is protected against electrostatic discharge (ESD) on all pins as specified in the attributes table. Note: Human Body Model for +IN and IN pins are rated at.8 kv while all other pins are rated at 2. kv. Under closed loop operation, the ESD diodes have no effect on circuit performance. However, under certain conditions the ESD diodes will be evident. If the device is driven into a slewing condition, the ESD diodes will clamp large differential voltages until the feedback loop restores closed loop operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct. 2
13 ORDERING INFORMATION Device Package Shipping NCS2SQT2 SC7 (SC88A) Tape & Reel NCS2SQT2G SC7 (SC88A) (Pb Free) Tape & Reel NCS2SNT SOT2 (TSOP ) Tape & Reel NCS2SNTG SOT2 (TSOP ) (Pb Free) Tape & Reel NCS2D* SO 8 98 Units/Rail NCS2DR2* SO 8 2 Tape & Reel NCS2DG* SO 8 (Pb Free) 98 Units/Rail NCS2DR2G* SO 8 (Pb Free) 2 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *Contact ON Semiconductor for ordering information.
14 PACKAGE DIMENSIONS SO 8 D SUFFIX CASE 7 7 ISSUE AF X B Y Z H 8 G A D 4 S C.2 (.) M Z Y S X S.2 (.) M SEATING PLANE Y. (.4) M N X 4 M K J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, CONTROLLING DIMENSION: MILLIMETER.. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION. (.) PER SIDE.. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.. 7 THRU 7 ARE OBSOLETE. NEW STANDARD IS 7 7. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D....2 G.27 BSC. BSC H J K M 8 8 N S SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 4
15 PACKAGE DIMENSIONS SC 7 (SC 88A) SQ SUFFIX CASE 49A 2 ISSUE G S A G 4 B 2 D PL C.2 (.8) M B M N J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, CONTROLLING DIMENSION: INCH.. 49A OBSOLETE. NEW STANDARD 49A DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B.4... C D G.2 BSC. BSC H.4. J K N.8 REF.2 REF S H K SOLDERING FOOTPRINT* SCALE 2: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
16 PACKAGE DIMENSIONS SOT2 (TSOP ) SN SUFFIX CASE 48 2 ISSUE C. (.2) S H D 4 2 L G A B C K J M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, CONTROLLING DIMENSION: MILLIMETER.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G H....4 J K L M S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 2, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2 9 Kamimeguro, Meguro ku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NCS2/D
NCS MHz Voltage Feedback Op Amp
75 MHz Voltage Feedback Op Amp NCS255 is a 75 MHz voltage feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The voltage feedback architecture
More informationNCS ma 200 MHz Current Feedback Op Amp with Enable Feature
. ma 2 MHz Current Feedback Op Amp with Enable Feature NCS25 is a. ma 2 MHz current feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The current
More informationNCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier
NCS, NCSA. MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier The NCS operational amplifier provides rail to rail output operation. The output can swing within 7 mv to the positive rail and mv
More informationNB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier
4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference
More informationNCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output
Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output
More informationNUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection
Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching
More informationAudio Equipment Instrumentation and Control Circuits Telephone Channel Amplifiers Medical Equipment. Features PIN CONNECTIONS
NE3, SA3, SE3, NE3A, SA3A, SE3A Single Low Noise Operational Amplifier The NE/SA/SE3/3A are single high-performance low noise operational amplifiers. Compared to other operational amplifiers, such as TL3,
More informationP SUFFIX CASE 646 Single Supply Split Supplies SO-14 D SUFFIX CASE 751A PIN CONNECTIONS
Dual Operational Amplifier and Dual Comparator The MC05 contains two differential-input operational amplifiers and two comparators, each set capable of single supply operation. This operational amplifier-comparator
More informationEMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
More informationNLAS323. Dual SPST Analog Switch, Low Voltage, Single Supply A4 D
Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS323 is a dual SPST (Single Pole, Single Throw) switch, similar to /2 a standard 466. The device permits the independent selection of 2 analog/digital
More informationNCS Channel Video Amp with High Definition Reconstruction Filters
3-Channel Video Amp with High Definition Reconstruction Filters Description NCS2563 is a 3 Channel high speed video amplifier with 6th order Butterworth High Definition (HD) reconstruction filters and
More informationMBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
More informationNTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
More informationLM321. Single Channel Operational Amplifier
Single Channel Operational Amplifier LM32 is a general purpose, single channel op amp with internal compensation and a true differential input stage. This op amp features a wide supply voltage ranging
More informationNTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
More informationNTMD4820NR2G. Power MOSFET 30 V, 8 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET V, A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC
More informationMARKING DIAGRAMS ORDERING INFORMATION Figure 1. Representative Schematic Diagram (Each Amplifier) DUAL MC33078P
The MC33078/9 series is a family of high quality monolithic amplifiers employing Bipolar technology with innovative high performance concepts for quality audio and data signal processing applications.
More informationNCV1009ZG. 2.5 Volt Reference
V9 2.5 Volt Reference The V9 is a precision trimmed 2.5 V ±5. mv shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance
More informationTCA0372, TCA0372B. 1.0 A Output Current, Dual Power Operational Amplifiers
.0 A Output Current, Dual Power Operational Amplifiers The TCA0372 is a monolithic circuit intended for use as a power operational amplifier in a wide range of applications, including servo amplifiers
More informationMC Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier
MC3334 Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier The MC3334 is a monolithic bipolar operational amplifier. This low voltage rail to rail amplifier has both a rail to rail input and output
More information7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.
2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power
More informationNSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
More informationNTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
More informationMMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ4678ET Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
More informationNTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
More informationNCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability
DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable systems
More informationP2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
More informationMMSZ2V4T1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZVT Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
More informationNTD7N ELECTRICAL CHARACTERISTICS ( unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Break
NTD7N Power MOSFET V, 8 A, Single N Channel, Features Low R DS(on) High Current Capability Low Gate Charge These are Pb Free Devices Applications Electronic Brake Systems Electronic Power Steering Bridge
More informationNTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
More informationNTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
More informationNCP ma, 10 V, Low Dropout Regulator
15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage
More informationNB3N508S. 3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output
3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output Description The NB3N508S is a high precision, low phase noise Voltage Controlled Crystal Oscillator (VCXO) and phase lock loop (PLL) that
More informationMC10H352. Quad CMOS to PECL* Translator
Quad CMOS to PECL* Translator Description The MC10H352 is a quad translator for interfacing data between a CMOS logic section and the PECL section of digital systems when only a +5.0 Vdc power supply is
More informationNTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
More informationMUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
More informationNTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
More informationNTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
More informationNCN1154. USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability
USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable
More informationNTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
More informationMMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
More informationNTF2955. Power MOSFET. 60 V, 2.6 A, Single P Channel SOT 223
NTF955 Power MOSFET V,. A, Single P Channel SOT Features TMOS7 Design for low R DS(on) Withstands High Energy in Avalanche and Commutation Modes Pb Free Package is Available Applications Power Supplies
More informationMJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
More informationPIN CONNECTIONS ORDERING INFORMATION PIN CONNECTIONS P SUFFIX PLASTIC PACKAGE CASE 626 D SUFFIX PLASTIC PACKAGE CASE 751 (SO 8) Inputs P SUFFIX
Quality bipolar fabrication with innovative design concepts are employed for the MC33181/2/4, MC34181/2/4 series of monolithic operational amplifiers. This JFET input series of operational amplifiers operates
More informationNTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
More informationMMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
More informationMARKING DIAGRAMS ORDERING INFORMATION DUAL MC33272AP AWL YYWW PDIP 8 P SUFFIX CASE 626 SO 8 D SUFFIX CASE ALYWA QUAD
The MC33272/74 series of monolithic operational amplifiers are quality fabricated with innovative Bipolar design concepts. This dual and quad operational amplifier series incorporates Bipolar inputs along
More informationNTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
More informationMMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
More informationNTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
More informationDistributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
More informationNTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package
NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution
More informationNSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
More informationNCP A, Low Dropout Linear Regulator with Enhanced ESD Protection
3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A
More informationLM339S, LM2901S. Single Supply Quad Comparators
LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features
More informationNTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
More informationNGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
More informationNTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
More informationBC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
More informationMMQA Quad Common Anode Series Preferred Devices. SC 74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA Quad Common Anode Series Preferred Devices SC 74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
More informationNTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89
NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD
More informationPIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
More informationBC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector
More informationMMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
More informationNGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
More informationMMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
More informationMARKING DIAGRAMS Split Supplies Single Supply PIN CONNECTIONS MAXIMUM RATINGS ORDERING INFORMATION SO 14 D SUFFIX CASE 751A
The MC3403 is a low cost, quad operational amplifier with true differential inputs. The device has electrical characteristics similar to the popular MC1741C. However, the MC3403 has several distinct advantages
More informationMMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
More informationMMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
More informationMJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
More informationMMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
More informationMBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
More informationMBR120LSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
More informationNTJS3151P. Trench Power MOSFET. 12 V, 3.3 A, Single P Channel, ESD Protected SC 88
NTJS5P Trench Power MOSFET V,. A, Single P Channel, ES Protected SC 88 Features Leading Trench Technology for Low R S(ON) Extending Battery Life SC 88 Small Outline (x mm, SC7 Equivalent) Gate iodes for
More informationNTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
More informationNTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
More informationNSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
More informationMPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
MPSA Amplifier Transistor NPN Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4. Vdc Collector
More informationNTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
More informationBC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
More informationMMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
More informationNTHD2102PT1G. Power MOSFET. 8.0 V, 4.6 A Dual P Channel ChipFET
NTHDP Power MOSFET. V,. A Dual PChannel ChipFET Features Offers an Ultra Low R DS(on) Solution in the ChipFET Package Miniature ChipFET Package % Smaller Footprint than TSOP making it an Ideal Device for
More informationORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet.
The MC3320/2/4 family of operational amplifiers provide railtorail operation on both the input and output. The inputs can be driven as high as 200 mv beyond the supply rails without phase reversal on the
More informationDistributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
More informationMBR120VLSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
More informationMPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Emitter Base Voltage V EBO 4. Vdc Collector Current
More informationBAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
More informationNVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
More informationLOW POWER JFET INPUT OPERATIONAL AMPLIFIERS
These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow
More informationMJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
More informationMMBZ5V6ALT1 Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT 23 Dual Common Anode Zeners for ESD Protection
4 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage
More informationNTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
More informationNCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3
4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,
More informationMMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
More informationNTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package
NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry
More informationSM05T1G Series, SZSM05T1G. Transient Voltage Suppressor Diode Array. SOT 23 Dual Common Anode Diodes for ESD Protection
, SZ Transient Voltage Suppressor Diode Array Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection
More informationNSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of
More informationMMSZxxxET1 Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxET Series, SZMMSZxxxETG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
More informationNTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
More informationNUP2105LT3G. Dual Line CAN Bus Protector SOT 23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER
Dual Line CAN Bus Protector The NUP2105L has been designed to protect the CAN transceiver in high speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides
More information