NCS ma 200 MHz Current Feedback Op Amp

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1 . ma 2 MHz Current Feedback Op Amp NCS2 is a. ma 2 MHz current feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The current feedback architecture allows for a superior bandwidth and low power consumption. Features. db Small Signal BW (A V = +2., V O =. V p p ) 2 MHz Typ Slew Rate 4 V/ s Supply Current. ma Input Referred Voltage Noise 4. nv/ Hz THD db (f =. MHz, V O = 2. V p p ) Output Current ma Pin Compatible with EL, LMH72, MAX442 Pb Free Packages are Available Applications Portable Video Line Drivers Radar/Communication Receivers Set Top Box NTSC/PAL/HDTV NORMAILIZED GAIN(dB) Gain = +2 R F =.2k R L = V OUT = 2.V V OUT =.V V OUT = 2.V V OUT =.7V V OUT =.7V.. V OUT =.V Figure. Frequency Response: Gain (db) vs. Frequency Av = +2., R L = NC IN +IN V EE SO 8 D SUFFIX CASE 7 SC 7 (SC 88A) SQ SUFFIX CASE 49A MARKING DIAGRAMS N2 ALYW YA, N2 = NCS2 A = Assembly Location L = Wafer Lot Y = Year W = Work Week M = Date Code = Pb Free Package SOT2 (TSOP ) SN SUFFIX CASE 48 SO 8 PINOUT + (Top View) 8 7 SOT2 /SC7 PINOUT OUT YA M YAYW NC V CC OUT NC V CC V EE 2 + +IN 4 IN (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 2 May, 2 Rev. Publication Order Number: NCS2/D

2 PIN FUNCTION DESCRIPTION Pin (SO 8) Pin (SOT2/SC7) Symbol Function Equivalent Circuit OUT Output V CC ESD OUT V EE 4 2 V EE Negative Power Supply +IN Non inverted Input V CC +IN ESD ESD IN 2 4 IN Inverted Input See Above 7 V CC Positive Power Supply,, 8 N/A NC No Connect V EE V CC +IN OUT IN C C V EE Figure 2. Simplified Device Schematic 2

3 ATTRIBUTES Characteristics ESD Human Body Model Machine Model Charged Device Model Value 2. kv (Note ) 2 V. kv Moisture Sensitivity (Note 2) Level Flammability Rating Oxygen Index: 28 to 4 UL 94 in..8 kv between the input pairs +IN and IN pins only. All other pins are 2. kv. 2. For additional information, see Application Note AND8/D. MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltage V S V DC Input Voltage Range V I V S V DC Input Differential Voltage Range V ID V S V DC Output Current I O ma Maximum Junction Temperature (Note ) T J C Operating Ambient Temperature T A 4 to +8 C Storage Temperature Range T stg to + C Power Dissipation P D (See Graph) mw Thermal Resistance, Junction to Air SO 8 SC7 SOT2 R JA Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. Power dissipation must be considered to ensure maximum junction temperature (T J ) is not exceeded. C/W MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the overheated condition for an extended period can result in device damage. Maximum Power Dissapation (mw) SC7 Pkg SO 8 Pkg SOT2 Pkg Ambient Temperature ( C) Figure. Power Dissipation vs. Temperature

4 AC ELECTRICAL CHARACTERISTICS (V CC = +. V, V EE =. V, T A = 4 C to +8 C, R L = to GND, R F =.2 k, A V = +2., V IN = V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth. db Small Signal. db Large Signal GF.dB. db Gain Flatness Bandwidth A V = +2., V O =. V p p 2 A V = +2., V O = 2. V p p 4 MHz A V = +2. MHz dg Differential Gain A V = +2., R L =, f =.8 MHz.2 % dp Differential Phase A V = +2., R L =, f =.8 MHz. TIME DOMAIN RESPONSE SR Slew Rate A V = +2., V step = 2. V 4 V/ s t s Settling Time.%.% A V = +2., V step = 2. V A V = +2., V step = 2. V t r t f Rise and Fall Time (% 9%) A V = +2., V step = 2. V. ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f =. MHz, V O = 2. V p p, R L = db HD2 2nd Harmonic Distortion f =. MHz, V O = 2. V p p 7 dbc HD rd Harmonic Distortion f =. MHz, V O = 2. V p p 7 dbc IP Third Order Intercept f = MHz, V O = 2. V p p dbm SFDR Spurious Free Dynamic Range f =. MHz, V O = 2. V p p 8 dbc e N Input Referred Voltage Noise f =. MHz 4. nv Hz 8 ns i N Input Referred Current Noise f =. MHz, Inverting f =. MHz, Non Inverting pa Hz 4

5 DC ELECTRICAL CHARACTERISTICS (V CC = +. V, V EE =. V, T A = 4 C to +8 C, R L = to GND, R F =.2 k, A V = +2., V IN = V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE V OS Offset Voltage mv V IO / T Input Offset Voltage Temperature Coefficient. V/ C I IB Input Bias Current +Input (Non Inverting), V O = V Input (Inverting), V O = V (Note 4) A I IB / T Input Bias Current Temperature Coefficient +Input (Non Inverting), V O = V Input (Inverting), V O = V 4 na/ C INPUT CHARACTERISTICS V CM Input Common Mode Voltage Range (Note 4). 4. V CMRR Common Mode Rejection Ratio (See Graph) db R IN Input Resistance +Input (Non Inverting) Input (Inverting) 4. M C IN Differential Input Capacitance. pf OUTPUT CHARACTERISTICS R OUT Output Resistance.2 V O Output Voltage Swing.. V I O Output Current ma POWER SUPPLY V S Operating Voltage Supply V I S Power Supply Current V O = V.. 2. ma PSRR Power Supply Rejection Ratio (See Graph) 7 db 4. Guaranteed by design and/or characterization.

6 AC ELECTRICAL CHARACTERISTICS (V CC = +2. V, V EE = 2. V, T A = 4 C to +8 C, R L = to GND, R F =.2 k, A V = +2., V IN = V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW Bandwidth. db Small Signal. db Large Signal GF.dB. db Gain Flatness Bandwidth A V = +2., V O =. V p p 8 A V = +2., V O =. V p p MHz A V = +2. MHz dg Differential Gain A V = +2., R L =, f =.8 MHz.2 % dp Differential Phase A V = +2., R L =, f =.8 MHz. TIME DOMAIN RESPONSE SR Slew Rate A V = +2., V step =. V V/ s t s Settling Time.%.% A V = +2., V step =. V A V = +2., V step =. V t r t f Rise and Fall Time (% 9%) A V = +2., V step =. V 8. ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f =. MHz, V O =. V p p, R L = db HD2 2nd Harmonic Distortion f =. MHz, V O =. V p p 7 dbc HD rd Harmonic Distortion f =. MHz, V O =. V p p 7 dbc IP Third Order Intercept f = MHz, V O =. V p p dbm SFDR Spurious Free Dynamic Range f =. MHz, V O =. V p p 8 dbc 4 8 ns e N Input Referred Voltage Noise f =. MHz 4. i N Input Referred Current Noise f =. MHz, Inverting f =. MHz, Non Inverting nv Hz pa Hz

7 DC ELECTRICAL CHARACTERISTICS (V CC = +2. V, V EE = 2. V, T A = 4 C to +8 C, R L = to GND, R F =.2 k, A V = +2., V IN = V, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit DC PERFORMANCE V OS Offset Voltage mv V IO / T Input Offset Voltage Temperature Coefficient. V/ C I IB Input Bias Current +Input (Non Inverting), V O = V Input (Inverting), V O = V (Note ) A I IB / T Input Bias Current Temperature Coefficient +Input (Non Inverting), V O = V Input (Inverting), V O = V 4 na/ C INPUT CHARACTERISTICS V CM Input Common Mode Voltage Range (Note ).. V CMRR Common Mode Rejection Ratio (See Graph) db R IN Input Resistance +Input (Non Inverting) Input (Inverting) 4. M C IN Differential Input Capacitance. pf OUTPUT CHARACTERISTICS R OUT Output Resistance.2 V O Output Voltage Swing..4 V I O Output Current 4 8 ma POWER SUPPLY V S Operating Voltage Supply. V I S Power Supply Current V O = V..9.9 ma PSRR Power Supply Rejection Ratio (See Graph) 7 db. Guaranteed by design and/or characterization. V IN + V OUT R F R L R F Figure 4. Typical Test Setup (A V = +2., R F =.8 k or.2 k or. k, R L = ) 7

8 NORMAILIZED GAIN(dB) Gain = +2 R F =.2k R L = V OUT = 2.V V OUT = 2.V V OUT =.V V OUT =.V NORMALIZED GAIN (db) V OUT =.7V V OUT =.V 9 V OUT =.7V V 2 OUT =.V.... Gain = + R F =.2k R L = V OUT =.V V OUT =.7V V OUT =.7V V OUT =.V Figure. Frequency Response: Gain (db) vs. Frequency Av = +2. Figure. Frequency Response: Gain (db) vs. Frequency Av = +. NORMALIZED GAIN (db) V OUT = 2.V R L = A V = +2 A V = +2 A V = +4 A V = +4 NORMAILIZED GAIN(dB) 9 9 A V = V OUT =.V R L = A V = +4 A V = + A V = +2 A V = +4 A V = + Figure 7. Large Signal Frequency Response Gain (db) vs. Frequency Figure 8. Small Signal Frequency Response Gain (db) vs. Frequency Figure 9. Small Signal Step Response Vertical: mv/div Horizontal: ns/div Figure. Large Signal Step Response Vertical: mv/div Horizontal: ns/div 8

9 DISTORTION (db) THD HD HD2 V OUT = 2V PP R L = 8 Figure. THD, HD2, HD vs. Frequency DISTORTION (db) THD HD HD2 f = MHz R L = V OUT (V PP ) Figure 2. THD, HD2, HD vs. Output Voltage VOLTAGE NOISE (nv/ Hz) 7 ±2.V 4 ±.V 2 FREQUENCY (khz) CMRR (db) k k M M M FREQUENCY (Hz) Figure. Input Referred Noise vs. Frequency Figure 4. CMRR vs. Frequency PSRR(dB) V 2.V.V 7.. DIFFERENTIAL GAIN (%) R L = 4.4MHz.8MHz 2MHz MHz OFFSET VOLTAGE (V) Figure. PSRR vs. Frequency Figure. Differential Gain 9

10 DIFFERENTIAL PHASE ( ) MHz 2MHz.8MHz 4.4MHz.4 R L = OFFSET VOLTAGE (V) CURRENT (ma) C 2 C 4 C POWER SUPPLY VOLTAGE (V) Figure 7. Differential Phase Figure 8. Supply Current vs. Power Supply 8 9 OUTPUT VOLTAGE (V PP ) C 2 C 4 C OUTPUT VOLTAGE (V PP ) A V = +2 f = MHz SUPPLY VOLTAGE (V) k LOAD RESISTANCE ( ) Figure 9. Output Voltage Swing vs. Supply Voltage Figure 2. Output Voltage Swing vs. Load Resistance 8 OUTPUT RESISTANCE ( ).... Figure 2. Output Impedance vs. Frequency GAIN (db) R F =.2k R L = Gain= +2 pf 47pF pf Figure 22. Frequency Response vs. CL

11 M TRANSIMPEDANCE ( ) M k k k.. k Figure 2. Transimpedance (ROL) vs. Frequency

12 General Design Considerations The current feedback amplifier is optimized for use in high performance video and data acquisition systems. For current feedback architecture, its closed loop bandwidth depends on the value of the feedback resistor. The closed loop bandwidth is not a strong function of gain, as is for a voltage feedback amplifier, as shown in Figure 24. GAIN (db) A V = +2 V CC = + V V EE = V R F = k R F =.2 k R F =.8 k 2... Figure 24. Frequency Response vs. R F The. db bandwidth is, to some extent, dependent on the power supply voltages. By using lower power supplies, the bandwidth is reduced, because the internal capacitance increases. Smaller values of feedback resistor can be used at lower supply voltages, to compensate for this affect. Feedback and Gain Resistor Selection for Optimum Frequency Response A current feedback operational amplifier s key advantage is the ability to maintain optimum frequency response independent of gain by using appropriate values for the feedback resistor. To obtain a very flat gain response, the feedback resistor tolerance should be considered as well. Resistor tolerance of % should be used for optimum flatness. Normally, lowering RF resistor from its recommended value will peak the frequency response and extend the bandwidth while increasing the value of RF resistor will cause the frequency response to roll off faster. Reducing the value of RF resistor too far below its recommended value will cause overshoot, ringing, and eventually oscillation. Since each application is slightly different, it is worth some experimentation to find the optimal RF for a given circuit. A value of the feedback resistor that produces. db of peaking is the best compromise between stability and maximal bandwidth. It is not recommended to use a current feedback amplifier with the output shorted directly to the inverting input. Printed Circuit Board Layout Techniques Proper high speed PCB design rules should be used for all wideband amplifiers as the PCB parasitics can affect the overall performance. Most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. A space (/ is plenty) should be left around the signal lines to minimize coupling. Also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. Line lengths less than /4 are recommended. Video Performance This device designed to provide good performance with NTSC, PAL, and HDTV video signals. Best performance is obtained with back terminated loads as performance is degraded as the load is increased. The back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage. ESD Protection This device is protected against electrostatic discharge (ESD) on all pins as specified in the attributes table. Note: Human Body Model for +IN and IN pins are rated at.8 kv while all other pins are rated at 2. kv. Under closed loop operation, the ESD diodes have no effect on circuit performance. However, under certain conditions the ESD diodes will be evident. If the device is driven into a slewing condition, the ESD diodes will clamp large differential voltages until the feedback loop restores closed loop operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct. 2

13 ORDERING INFORMATION Device Package Shipping NCS2SQT2 SC7 (SC88A) Tape & Reel NCS2SQT2G SC7 (SC88A) (Pb Free) Tape & Reel NCS2SNT SOT2 (TSOP ) Tape & Reel NCS2SNTG SOT2 (TSOP ) (Pb Free) Tape & Reel NCS2D* SO 8 98 Units/Rail NCS2DR2* SO 8 2 Tape & Reel NCS2DG* SO 8 (Pb Free) 98 Units/Rail NCS2DR2G* SO 8 (Pb Free) 2 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *Contact ON Semiconductor for ordering information.

14 PACKAGE DIMENSIONS SO 8 D SUFFIX CASE 7 7 ISSUE AF X B Y Z H 8 G A D 4 S C.2 (.) M Z Y S X S.2 (.) M SEATING PLANE Y. (.4) M N X 4 M K J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, CONTROLLING DIMENSION: MILLIMETER.. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION. (.) PER SIDE.. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.. 7 THRU 7 ARE OBSOLETE. NEW STANDARD IS 7 7. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D....2 G.27 BSC. BSC H J K M 8 8 N S SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 4

15 PACKAGE DIMENSIONS SC 7 (SC 88A) SQ SUFFIX CASE 49A 2 ISSUE G S A G 4 B 2 D PL C.2 (.8) M B M N J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, CONTROLLING DIMENSION: INCH.. 49A OBSOLETE. NEW STANDARD 49A DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B.4... C D G.2 BSC. BSC H.4. J K N.8 REF.2 REF S H K SOLDERING FOOTPRINT* SCALE 2: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

16 PACKAGE DIMENSIONS SOT2 (TSOP ) SN SUFFIX CASE 48 2 ISSUE C. (.2) S H D 4 2 L G A B C K J M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, CONTROLLING DIMENSION: MILLIMETER.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G H....4 J K L M S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 2, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2 9 Kamimeguro, Meguro ku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NCS2/D

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