Sensors and actuators at NXP: bringing more than Moore to CMOS

Transcription

1 Sensors and actuators at NXP: bringing more than Moore to CMOS Joost van Beek Senior Principal Scientist Corporate R&D, NXP Semiconductors Presented at the International Symposium on Advanced Hybrid Nano Devices 4-5 October, 2011, Tokyo Institute of Technology

2 NXP Semiconductors NXP Semiconductors N.V. (NASDAQ: NXPI) provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise. Our innovations are used in a wide range of automotive, identification, wireless infrastructure, lighting, industrial, mobile, consumer and computing applications. 2

3 More Moore: Miniaturization Baseline CMOS: MPU, Memory, Logic High Performance Mixed Signal Solutions More Than Moore Required Application Optimized Mix of Analog and Digital More Than Moore: Enrichment c75 c35 c18 c13 90nm 65nm 45nm Passives High Voltage Power Information Processing, Storage & Security Analog (amp, IF, DC) RF Sensors Actuators Sense, Interact, Empower High-Performance Components High-Performance Mixed-Signal Solutions Power Efficiency, Autonomy Cost Efficiency Functional Performance Miniaturization Quality, Ruggedness and Adaptability Biochips Radio Interface Sensor Actuator Mixed-Signal Sub-Systems Processor / Storage Power Digital Advanced CMOS 3 3

4 HPMS Sensor & Actuator Solutions Timing Frequency synthesis Humidity Temperature Acidity Shock Pressure Magnetic field Light Radio Interface Sensor Actuator Mixed-Signal Sub-Systems Digital Advanced CMOS Processor / Storage Power CO 2 4 4

5 What can we do with CMOS? Additional layers on top of finished wafer 4..6 metal interconnect: µm-thick mix of Al/Ti(N)/W conductors in oxide/nitride matrix C/Z transducers - RH, ph, Gas (CO2, CO) Selective removals of materials: -Mechanical transducers (shock, pressure) - Thermal actuation and sensing (ph; CO2) active devices level: - diodes, mosfet s, bipolars Si electronic properties: - Eg(T) (T transducer) - photoconductivity (ALS)

6 CMOS multiple sensor integration KOALA First CMOS integrated sensors prototype demonstration: - Wireless read-out - Single chip with Temperature, Relative Humidity and Ambient Light sensors 6

7 NXP Research Prototype (KOALA) CMOS integrated sensors test-chip Add-on to baseline CMOS : Gas phase (humidity, CO2, O2, C2H4), Liquid (Immersion, ph), Mechanical Shock, Pressure and Ambient Light sensors

8 MEMS Timing Devices MEMS based oscillator MEMS resonator vacuum seal resonator On-wafer vacuum sealed MEMS resonator CMOS14 amplifier CMOS amplifier accurate clock signal 8

9 price A MEMS resonator is small, cheap, and Si Small 15 MHz MEMS resonator 0.4X0.4X0.15 mm 3 Inexpensive Processed 200 mm wafer contains ~ 100,000 devices Scalable quartz min. product height: 400 um +/-10% 15 MHz quartz resonator 2.5X2.0X0.55 mm 3 Standard back-end processing (plastic molded packaging) Allows integration CMOS MEMS product height: <150 um quartz miniaturization Less components 9

10 Frequency offset [ppm] MEMS Timing Device technology Low temperature drift High frequency 200 AT-cut quartz crystal Si-SiO 2 m m 3.15 m m m World s smallest MEMS resonator!! -200 m Quartz tuning fork Uncompensated Si Temperature [ o C] m 10 m On-wafer package Low noise Phase noise (dbc/hz) MHz 1e+1 1e+2 1e+3 Frequency offset (Hz) 10 October 4, 2011

11 Capacitive pressure sensor Capacitive pressure sensor A (static) pressure causes a deflection of the membrane and thus a change in the capacitance. For a circular membrane with electrode radius R and gap height g and electrode isolation thickness h diel and deflection profile w(r,p) ε A g 0 C C P R 2 rdr h g w r, P 0 diel r 0 g h R 11

12 1.5 mm 0.6 mm Advantages of capacitive sensor on CMOS Capacitive pressure sensor low-power operation Pressure sensor integrated on CMOS Low parasitic coupling: increased S-N Reduced size & thickness for same sensitivity (>6x) Single-die advantage Piezoresistive read-out: dual die Capacitive read-out: single die ASIC 5 mm 2 mm 0.4 mm 1.5 mm 5 mm 1.2 mm 12

13 Pressure (mbar) Height (m) Pressure sensor performance Pressure resolution is better than 0.02 mbar (i.e. 2 Pa or 16 cm!!!) due to the 19 bit resolution of the capacitance to digital converter on the table on the ground Time (s)

14 Size (nm) CMOS scaling in relation to bio-sensing Chlamydia HIV Prokaryotes Viruses S G D 10 IgG Proteins DNA base pair pitch Small molecules Mouse IgG Gate length = 33 nm Year of production (ITRS 2009)

15 NXP Biosensor technology Standard C90 nm CMOS chip design Individual addressable electrodes On-chip data storage On-chip calibration 256 x 256 nanoelectrodes 8 A/D converters 4 temperature sensors Label-free capacitive detection on 180 nm nano-electrodes electrolyte C eff. A d Sensor principle electrode Sensor configuration AFM picture nano-electrodes

16 Bio-sensor unique selling points Label-free detection platform applicable for affinity sensing: DNA/proteins Ability for multiplexing Very good time resolution: 0.2 s allows kinetic measurements Potential to measure in pm range Based on standard CMOS chip manufacturing cost-effective

17 AMR sensor applications Window wiper using 2 angle sensors KMZ43T Adaptive steering Using 3 angle sensors KMZ41 Steering Wheel position Throttle control using 2 angle sensors KMA199E ABS using 4 wheel speed sensors KMI15 17

18 The AMR Effect Relation b/w Resistivity and Direction of Magnetisation Due to the AMR effect in so-called transition metals (TMs) (e.g. Fe, Co and Ni) the electrical resistivity depends on the angle between current and magnetization direction β = 0 R = R 0 + ΔR = R max β = 90 R = R 0 = R min + β - R = R 0 + ΔR cos 2 β Current MR ratio Typical MR ratio for NiFe 81:19 2,2% (R - R )/ R =DR/ R 18 October 4, 2011

19 Principle of AMR based Rotational Speed Measurement Gear wheel Sensor Magnetic field lines Direction of motion Magnet a.) b.) c.) d.) position 19

20 Key messages Sensors & Actuators are natural fit to NXP s HPMS strategy Go with the (CMOS process) flow: Mainstream CMOS forms a baseline for many of our process developments Trend towards co-integration of Sensors & Actuators on CMOS Several sensors on a single die: parallel processing & correlation possible CMOS circuitry close to sensor : low parasitics, improved power efficiency Sensors & Actuator development requires holistic approach: Co-design of driver/reader electronics together with sensor/actuator 20 October 4, 2011

21 Acknowledgement Wim Besling Youri Ponomarev Frederik Vanhelmont Frans Widdershoven 21 October 4, 2011

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