HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E V/1.0 Ω, Hermetically Sealed, Power MOSFET Optocoupler. Features.

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1 HSSR11, HSSR111, HSSR112, HSSR11E V/1. Ω, Hermetically Sealed, Power MOSFET Optocoupler Data Sheet Description The HSSR11, HSSR111, HSSR112, HSSR11E and SMD 9291 are single channel power MOSFET optocouplers, constructed in eightpin, hermetic, dualinline, ceramic packages. The devices operate exactly like a solidstate relay. The products are capable of operation and storage over the full military temperature range and may be purchased as a standard product (HSSR11), with full MIL PRF Class H testing (HSSR111 and HSSR 112), with MILPRF Class E testing (Class K with exceptions) (HSSR11E) or from the DLA Standard Microcircuit Drawing (SMD) Details of the Class E program may be found on page 11 of this datasheet. Functional Diagrams 1 NC + 2 V F NC AC/DC CONNECTION CONNECTION B DC CONNECTION I O + 1 NC + 2 V O V F NC TRUTH TABLE INPUT H L OUTPUT CLOSED OPEN I O + V O Features Dual Marked with Device Part Number and DLA Standard Microcircuit Drawing ac/dc Signal &Power Switching Compact SolidState Bidirectional Switch Manufactured and Tested on a MILPRFCertified Line QML MILPRF Class H Modified Space Level Processing Available (Class E) Hermetically Sealed Pin Dual InLine Package Small Size and Weight Performance Guaranteed over C to 12 C Connection A. A, 1. Ω Connection B1. A,.2 Ω 1 Vdc Withstand Test Voltage High Transient Immunity Amp Output Surge Current Applications Military and Space High Reliability Systems Standard 2 Vdc and Vdc Load Driver Standard 2 Vac Load Driver Aircraft Controls ac/dc Electromechanical and Solid State Relay Replacement I/O Modules Harsh Industrial Environments CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.

2 All devices are manufactured and tested on a MIL PRF certified line and are included in the DLA Qualified Manufacturers List, QML for Hybrid Microcircuits. Each device contains an AlGaAs light emitting diode optically coupled to a photovoltaic diode stack which drives two discrete power MOSFETs. The device operates as a solidstate replacement for singlepole, normally open, (1 Form A) relay used for general purpose switching of signals and loads in high reliability applications. The devices feature logic level input control and very low output onresistance, making them suitable for both ac and dc loads. Connection A, as shown in the Functional Diagram, allows the device to switch either ac or dc loads. Connection B, with the polarity and pin configuration as shown, allows the device to switch dc loads only. The advantage of Connection B is that the onresistance is significantly reduced, and the output current capability increases by a factor of two. The devices are convenient replacements for mechanical and solid state relays where high component reliability with standard footprint lead configuration is desirable. Devices may be purchased with a variety of lead bend and plating options. See Selection Guide table for details. Standard Microcircuit Drawing (SMD) parts are available for each package and lead style. The HSSR11, HSSR111, HSSR112, HSSR11E and SMD 9291 are designed to switch loads on 2 Vdc power systems. They meet V surge and ± V spike requirements. Selection Guide Lead Configuration Options Avago Technologies s Part Number and Options Commercial HSSR11 MILPRF Class H HSSR111 HSSR112 MILPRF Class E HSSR11E Standard Lead Finish Gold Plate Gold Plate Gold Plate Solder Dipped* Option #2 Option 2 Option 2 Butt Joint/Gold Plate Option #1 Option 1 Gull Wing/Soldered* Option # Option Crew Cut/Gold Plate Option # SMD Part Number Prescript for all below Gold Plate 911HPC 912HPC 911EPC Solder Dipped* 911HPA 912HPA 911EPA Butt Joint/Gold Plate 911HYC 912HYC Butt Joint/Soldered* 911HYA 912HYA Gull Wing/Soldered* 911HXA 912HXA Crew Cut/Gold Plate 911HZC Crew Cut/Soldered* 911HZA * Solder Contains Lead CAUTION: Maximum Switching Frequency Care should be taken during repetitive switching of loads so as not to exceed the maximum output current, maximum output power dissipation, maximum case temperature, and maximum junction temperature. 2

3 Outline Drawing pin DIP Through Hole.1 (.2) MIN (.9) 2.9 (.11) 9. (.) 9.91 (.9). (.) 1.2 (.).2 (.1 ).1 (.1 ) MIN..1 (.2 ) NOTE: DIMENSIONS IN MILLIMETERS (INCHES)..1 (.2).1 (.22 ). (.29 ).2 (. ). (.1 ). (.29). (.1) Device Marking AVAGO DESIGNATOR AVAGO P/N DLA SMD* DLA SMD* PIN ONE/ ESD IDENT A QYYWWZ XXXXXX XXXXXXX XXX XXX * QUALIFIED PARTS ONLY Thermal Resistance COMPLIANCE INDICATOR, * DATE CODE, SUFFIX (IF NEEDED) COUNTRY OF MFR. AVAGO CAGE CODE* Maximum Output MOSFET Junction to Case θjc = 1 C/W ESD Classification (MILSTD, Method 1)... ( ), Class 2 Absolute Maximum Ratings Parameter Symbol Min. Max. Units Note Storage Temperature Range T S +1 C Operating Ambient Temperature T A +12 C Junction Temperature T J +1 C Operating Case Temperature T C +1 C 1 Lead Solder Temperature 2 for 1 s C (1. mm below seating plane) Average Input Current 2 ma Peak Repetitive Input Current PK ma (Pulse Width < 1 ms; duty cycle < %) Peak Surge Input Current PK surge 1 ma (Pulse Width <.2 ms; duty cycle <.1%) Reverse Input Voltage V R V Average Output Current Figure 2 Connection A Connection B Single Shot Output Current Figure Connection A (Pulse width < 1 ms) Connection B (Pulse width < 1 ms) Output Voltage Connection A Connection B I O. 1. I OPK surge. 1. V O 9 Average Output Power Dissipation Figure mw A A A A V V

4 Recommended Operating Conditions Parameter Symbol Min. Max. Units Note Input Current (on) (ON) 2 ma 1 Input Current (on) (ON) 1 2 ma 11 Input Voltage (off) V F(OFF). V Operating Temperature T A +12 C Hermetic Optocoupler Options Note: Dimensions in millimeters (inches). Option Description 1 Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hirel product..2 (.1).1 (.2) MIN (.9) 2.9 (.11) 1.1 (.) 1. (.).1 (.2).2 (.). (.1). (.29). (.1) 2 Lead finish is solder dipped rather than gold plated. This option is available on commercial and hirel product. DLA Drawing part numbers contain provisions for lead finish. Surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. This option is available on commercial and hirel product. This option has solder dipped leads.. (.1). (.1).1 (.2) MIN (.9) 2.9 (.11) 1. (.) 1. (.).1 (.2).2 (.). (.1) 9. (.) 9.91 (.9) 1. (.2) 1.1 (.2) Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hirel product..1 (.1).1 (.2) MIN (.9) 2.9 (.11) 1.2 (.) TYP..2 (.). (.1). (.29). (.1) Note: Solder contains lead.

5 Electrical Specifications T A = C to +12 C, unless otherwise specified. See note 9. Parameter Output Withstand Voltage Output OnResistance Connection A Output OnResistance Connection B Output Leakage Current Input Forward Voltage Input Reverse Breakdown Voltage InputOutput Insulation Sym. Group A, Subgroup Test Conditions Min. Typ.* Max. Units Fig. Notes V O(OFF) 1, 2, V F =. V, I O = 1 A 9 11 V R (ON) 1, 2, = 1 ma, I O = ma, (pulse duration ms) = ma, I O = ma, (pulse duration ms) R (ON) 1, 2, = 1 ma, I O = 1. A, (pulse duration ms) = ma, I O = 1. A, (pulse duration ms). 1.,, 11 1., ,, 11.2, 1 I O(OFF) 1, 2, V F =. V, V O = 9 V 1 1 A V F 1, 2, = 1 ma V 9 11 = ma 1 V R 1, 2, I R = 1 A. V I IO 1 RH %, t = s, V IO = 1 Vdc, T A = 2 C Turn On Time t ON 9, 1, 11 = 1 ma, V DD = 2 V, I O = ma = ma, V DD = 2 V, I O = ma 1. A, 1.2. ms 1, 11 1, 11,. 12, 1 1 Turn Off Time t OFF 9, 1, 11 = 1 ma, V DD = 2 V, I O = ma Output Transient Rejection InputOutput Transient Rejection dvo dt dvio dt = ma, V DD = 2 V, I O = ma 9 V PEAK = V, C M = 1 pf, C L = 1 pf, R M 1 M 9 V DD = V, V IO(PEAK) = V, R L = 2 k, C L = 1 pf.2.2 ms 1, 1, 1, V/ s 1 V/ s 1

6 Typical Characteristics All typical values are at T A = 2 C, (ON) = 1 ma, V F (OFF) =. V unless otherwise specified. Parameter Symbol Test Conditions Typ. Units Fig. Notes Output OffCapacitance C O(OFF) V O = 2 V, f = 1 MHz 1 pf 1 Output Offset Voltage V OS = 1 ma, I O = ma 2 V 19 Input Diode Temperature Coefficient V F / T A = 1 ma 1. mv/ C Input Capacitance C IN V F = V, f = 1MHz 2 pf InputOutput Capacitance C IO V IO = V, f = 1 MHz 1. pf InputOutput Resistance R IO V IO = V, t = s 1 1 Turn On Time With Peaking t ON PK = 1 ma, SS = 1 ma V DD = 2 V, I O = ma.22 ms 1 Notes: 1. Maximum junction to case thermal resistance for the device is 1 C/W, where case temperature, T C, is measured at the center of the package bottom. 2. For rating, see Figure. The output power P O rating curve is obtained when the part is handling the maximum average output current I O as shown in Figure 2.. During the pulsed R ON measurement (I O duration < ms), ambient (T A ) and case temperature (T C ) are equal.. Device considered a two terminal device: pins 1 through shorted together and pins through shorted together.. This is a momentary withstand test, not an operating condition.. For a faster turnon time, the optional peaking circuit shown in Figure 1 may be implemented.. V OS is a function of, and is defined between pins and, with pin as the reference. V OS must be measured in a stable ambient (free of temperature gradients).. Zerobias capacitance measured between the LED anode and cathode. 9. Standard parts receive 1% testing at 2 C (Subgroups 1 and 9). SMD, Class H and Class E parts receive 1% testing at 2 C, 12 C and C (Subgroups 1 and 9, 2 and 1, and 11 respectively). 1. Applies to HSSR112 and 92912Hxx devices only. 11. Applies to HSSR11, HSSR111, HSSR11E, 92911Hxx and 92911Exx devices only. HSSR11 V CC (+V) IN R2 12 Ω R1 Ω R + V F C 1 μf 1 2 1/ ACTOO 1/ ACTOO* R1 = REQUIRED CURRENT LIMITING RESISTOR FOR (ON) = 1 ma. R2 = PULLUP RESISTOR FOR V F (OFF) < mv; (V CC V OH ) < mv, OMIT R2. R, C = OPTIONAL PEAKING CIRCUIT. * USE SECOND GATE IF (PK) > ma REMINDER: TIE ALL UNUSED INPUTS TO GROUND OR V CC R (Ω) 1 TYPICAL VALUES (PK) (ma) 1 (NO PK) 2 1 HSSR11 t ON (ms) Figure 1. Recommended Input Circuit.

7 I O OUTPUT CURRENT A CONNECTION A 1 ma CA = C/W CA = C/W T A AMBIENT TEMPERATURE C 1 I OPK SURGE OUTPUT CURRENT A ma CONNECTIONB CONNECTIONA 2 1 PULSE DURATION ms P O OUTPUT POWER DISSIPATION W CONNECTION A 1 ma CA = C/W CA = C/W T A AMBIENT TEMPERATURE C 1 Figure 2. Maximum Average Output Current Rating vs. Ambient Temperature. Figure. Single Shot (nonrepetitive) Output Current vs. Pulse Duration. Figure. Output Power Rating vs. Ambient Temperature. NORMALIZED TYPICAL OUTPUT WITHSTAND VOLTAGE V F =. V I O = 1 μa NORMALIZED TYPICAL OUTPUT RESISTANCE CONNECTION A 1 ma I O = ma (PULSE DURATION ms) I O OUTPUT CURRENT A CONNECTION A I O 1 ma I O (PULSE DURATION ms) T A = 12 C T A = 2 C T A = C T A AMBIENT TEMPERATURE C T A AMBIENT TEMPERATURE C V O OUTPUT VOLTAGE V Figure. Normalized Typical Output Withstand Voltage vs. Temperature. Figure. Normalized Typical Output Resistance vs. Temperature. Figure. Typical On State Output IV Characteristics. I O(OFF) OUTPUT LEAKAGE CURRENT A V F =. V V O = 9 V T A TEMPERATURE C Figure. Typical Output Leakage Current vs. Temperature INPUT FORWARD CURRENT A T A = 12 C T A = 2 C T A = C V F INPUT FORWARD VOLTAGE V Figure 9. Typical Input Forward Current vs. Input Forward Voltage.

8 V DD V O % P.W. = 1 ms 1% % 9% PULSE GEN. Z O = t f = t r = ns MONITOR + V F R (MONITOR) HSSR11 R L C L = 2 pf V O MONITOR NODE (C L INCLUDES PROBE AND FIXTURE CAPACITANCE) t ON t OFF Figure 1. Switching Test Circuit for t ON, t OFF. GND GND T ON TURN ON TIME ms = 1 ma V DD = 2 V I O = ma T A TEMPERATURE C T ON TURN ON TIME ms V DD = 2 V I O = ma T A = 2 C INPUT CURRENT ma T ON TURN ON TIME ms CONNECTION A = 1 ma I O = ma T A = 2 C V DD VOLTAGE V 9 Figure 11. Typical Turn On Time vs. Temperature. Figure 12. Typical Turn On Time vs. Input Current. Figure 1. Typical Turn On Time vs. Voltage. T OFF TURN OFF TIME μs = 1 ma V DD = 2 V I O = ma T A TEMPERATURE C T OFF TURN OFF TIME μs V DD = 2 V I O = ma T A = 2 C INPUT CURRENT ma C O(OFF) OUTPUT OFF CAPACITANCE pf f = 1 MHz T A = 2 C 2 2 V O(OFF) OUTPUT VOLTAGE V Figure 1. Typical Turn Off Time vs. Temperature. Figure 1. Typical Turn Off Time vs. Input Current. Figure 1. Typical Output Off Capacitance vs. Output Voltage.

9 INPUT OPEN + V F 1 2 HSSR11 C M INCLUDES PROBE AND FIXTURE CAPACITANCE R M INCLUDES PROBE AND FIXTURE RESISTANCE V PEAK + PULSE GENERATOR C M R M V M MONITOR NODE 9% 9% V PEAK 1% 1% t r t f V M (MAX) V dv O d t (.) V (PEAK) = t r Figure 1. Output Transient Rejection Test Circuit. OR (.) V (PEAK) t f OVERSHOOT ON V PEAK IS TO BE 1%. V DD HSSR11 R L 1 V O S 1 B A + V F 2 C L (C L INCLUDES PROBE PLUS FIXTURE CAPACITANCE ) 9% V IN 9% V IO + PULSE GENERATOR V IO(PEAK) 1% 1% tr t f S 1 AT A (V F = V) V O(OFF) (min).2 V V O(OFF) V O(ON) S 1 AT B ( = 1 ma) 11 OR ( = ma) 1 V O(ON) (max). 9 dv IO (.) V IO(PEAK) = dt t r OR (.) V IO(PEAK) t f OVERSHOOT ON V IO(PEAK) IS TO BE 1% Figure 1. InputOutput Transient Rejection Test Circuit.

10 ISOTHERMAL CHAMBER T je T jf1 T jd T jf2 1 HSSR T C V OS DIGITAL NANOVOLTMETER CA T A Figure 19. Voltage Offset Test Setup. 1 2 HSSR11 R OUT 1. V O (SEE NOTE) T je = LED JUNCTION TEMPERATURE T jf1 = FET 1 JUNCTION TEMPERATURE T jf2 = FET 2 JUNCTION TEMPERATURE T jd = FET DRIVER JUNCTION TEMPERATURE T C = CASE TEMPERATURE (MEASURED AT CENTER OF PACKAGE BOTTOM) T A = AMBIENT TEMPERATURE (MEASURED " AWAY FROM THE PACKAGE) CA = CASETOAMBIENT THERMAL RESISTANCE V IN. V R IN 2 R OUT 1. ALL THERMAL RESISTANCE VALUES ARE IN C/W Figure 21. Thermal Model. NOTE: IN ORDER TO DETERMINE V OUT CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST BE MEASURED FOR THE BURNIN BOARDS TO BE USED. THEN, KNOWING CA, DETERMINE THE CORRECT OUTPUT CURRENT PER FIGURES 2 AND TO INSURE THAT THE DEVICE MEETS THE DERATING REQUIREMENTS AS SHOWN. Figure 2. BurnIn Circuit. Applications Information Thermal Model The steady state thermal model for the HSSR11 is shown in Figure 21. The thermal resistance values given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistances between the LED and other internal nodes are very large in comparison with the other terms and are omitted for simplicity. The components do, however, interact indirectly through θca, the casetoambient thermal resistance. All heat generated flows through θ CA, which raises the case temperature TC accordingly. The value of θca depends on the conditions of the board design and is, therefore, determined by the designer. The maximum value for each output MOSFET junctiontocase thermal resistance is specified as 1 C/W. The thermal resistance from FET driver junctiontocase is also 1 C/W/W. The power dissipation in the FET driver, however, is negligible in comparison to the MOSFETs. OnResistance and Rating Curves The output onresistance, R ON, specified in this data sheet, is the resistance measured across the output contact when a pulsed current signal (I O = ma) is applied to the output pins. The use of a pulsed signal ( ms) implies that each junction temperature is equal to the ambient and case temperatures. The steadystate resistance, R SS, on the other hand, is the value of the resistance measured across the output contact when a DC current signal is applied to the output pins for a duration sufficient to reach thermal equilibrium. R SS includes the effects of the temperature rise of each element in the thermal model. Rating curves are shown in Figures 2 and. Figure 2 specifies the maximum average output current allowable for a given ambient temperature. Figure specifies the output power dissipation allowable for a given ambient temperature. Above C (for θ CA = C/W) and 1 C (for θ CA = C/W/W), the maximum allowable output current and power dissipation are related by the expression RSS = P O(max) / (I O(max) ) 2 from which R SS can be calculated. Staying within the safe area assures that the steadystate junction temperatures remain less than 1 C. As an example, for T A = 9 C and θ CA = C/W, Figure 2 shows that the output current should be limited to less than 1 ma. A check with Figure shows that the output power dissipation at T A = 9 C and I O = 1 ma, will be limited to less than. W. This yields an RSS of.9 Ω. 1

11 Design Considerations for Replacement of Electro Mechanical Relays The HSSR11 family can replace electromechanical relays with comparable output voltage and current ratings. The following design issues need to be considered in the replacement circuit. Input Circuit: The drive circuit of the electromechanical relay coil needs to be modified so that the average forward current driving the LED of the HSSR 11 does not exceed 2 ma. A nominal forward drive current of 1 ma is recommended. A recommended drive circuit with volt VCC and CMOS logic gates is shown in Figure 1. If higher VCC voltages are used, adjust the current limiting resistor to a nominal LED forward current of 1 ma. One important consideration to note is that when the LED is turned off, no more than. volt forward bias should be applied across the LED. Even a few microamps of current may be sufficient to turn on the HSSR 11, although it may take a considerable time. The drive circuit should maintain at least ma of LED current during the ON condition. If the LED forward current is less than the ma level, it will cause the HSSR11 to turn on with a longer delay. In addition, the power dissipation in the output power MOSFETs increases, which, in turn, may violate the power dissipation guidelines and affect the reliability of the device. Output Circuit: Unlike electromechanical relays, the designer should pay careful attention to the output onresistance of solid state relays. The previous section, On Resistance and Rating Curves describes the issues that need to be considered. In addition, for strictly dc applications the designer has an advantage using Connection B which has twice the output current rating as Connection A. Furthermore, for dconly applications, with Connection B the onresistance is considerably less when compared to Connection A. Output overvoltage protection is yet another important design consideration when replacing electromechanical relays with the HSSR11. The output power MOSFETs can be protected using Metal oxide varistors (MOVs) or TransZorbs against voltage surges that exceed the 9 volt output withstand voltage rating. Examples of sources of voltage surges are inductive load kickbacks, lightning strikes, and electrostatic voltages that exceed the specifications on this data sheet. For more information on output load and protection refer to Application Note 1. References: 1. Application Note 1, Low OnResistance Solid State Relays for High Reliability Applications. 2. Reliability Data for HSSR111, HSSR112, and HSSR11E. MOV is a registered trademark of GE/RCA Solid State. TransZorb is a registered trademark of General Semiconductor. MILPRF Class H, Class E and DLA SMD Test Program Class H: Avago Technologies s HiRel Optocouplers are in compliance with MILPRF Class H. Class H devices are also in compliance with DLA drawing Testing consists of 1% screening and quality conformance inspection to MILPRF. Class E: Class E devices are in compliance with DLA drawing Exx. Avago Technologies has defined the Class E device on this drawing to be based on the Class K requirements of MILPRF with exceptions. The exceptions are as follows: 1. Nondestructive Bond Pull, Test method 22 of MIL STD in device screening is not required. 2. Particle Impact Noise Detection (PIND), Test method 22 of MILSTD in device screening and group C testing is not required.. Die Shear Strength, Test method 219 of MILSTD in group B testing is not required.. Internal Water Vapor Content, Test method 11 of MIL STD in group C testing is not required.. Scanning Electron Microscope (SEM) inspections, Test method 21 of MILSTD in element evaluation is not required. For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2212 Avago Technologies. All rights reserved. Obsoletes 9919EN AV2EN October 2, 212

12 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Avago Technologies: HSSR111# HSSR HYC 92911EPC HSSR1121 HSSR112 HSSR EPA HSSR112 HSSR11E2 HSSR11E Broadcom Limited: 92911HXA

HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, ,

HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, , HSSR1, HSSR111, HSSR112, HSSR11E, 929311, 929312 1 9V/Ω, Hermetically Sealed, Power MOSFET Optocoupler Description The HSSR1, HSSR111, HSSR112, HSSR11E and SMD 929311, 929312 are singlechannel power MOSFET