HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E, ,

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1 HSSR1, HSSR111, HSSR112, HSSR11E, , V/Ω, Hermetically Sealed, Power MOSFET Optocoupler Description The HSSR1, HSSR111, HSSR112, HSSR11E and SMD , are singlechannel power MOSFET optocouplers, constructed in eightpin, hermetic, dualinline, ceramic packages. The devices operate exactly like a solidstate relay. The products are capable of operation and storage over the full military temperature range and can be purchased as a commercial product (HSSR1), with full MILPRF33 Class H testing (HSSR111 and HSSR 112), with MILPRF33 Class E testing (Class K with exceptions) (HSSR11E) or from the DLA Standard Microcircuit Drawing (SMD) Details of the Class E program exceptions are listed here: 1. Nondestructive Bond Pull, Test method 223 of MILSTD3 in device screening is not required. 2. Particle Impact Noise Detection (PIND), Test method 22 of MILSTD3 in device screening and group C testing is not required. 3. Die Shear Strength, Test method 219 of MILSTD3 in group B testing is not required.. Internal Water Vapor Content, Test method 1 of MILSTD3 in group C testing is not required.. Scanning Electron Microscope (SEM) inspections, Test method 21 of MILSTD3 in element evaluation is not required. Features Dual marked with device part number and DLA Standard Microcircuit Drawing (SMD) ac/dc signal and power switching Compact solidstate bidirectional switch Manufactured and tested on a MILPRF33 certified line QML33, Class H and Class E Hermetically sealed pin, dualinline package Small size and weight Performance guaranteed over C to 12 C Connection A.A, Ω Connection B 1.A,.2Ω 1 Vdc withstand test voltage High transient immunity Amp output surge current Applications Military and space High reliability systems Standard 2 Vdc and Vdc load driver Standard 2 Vac load driver Aircraft controls ac/dc electromechanical and solidstate relay replacement I/O modules Harsh industrial environments 1. See Selection Guide Lead Configuration Options for available extensions. CAUTION It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation that may be induced by ESD. 1

2 HSSR1, HSSR111, HSSR112, HSSR11E, , Functional Diagrams Functional Diagrams 1 NC 2 V F 3 NC AC/DC CONNECTION CONNECTION B DC CONNECTION I O 1 NC 2 V O V F 3 NC TRUTH TABLE All devices are manufactured and tested on a MILPRF33 certified line, and Class H and Class E devices are included in the DLA Qualified Manufacturers List, QML33 for Hybrid Microcircuits. Each device contains an AlGaAs lightemitting diode optically coupled to a photovoltaic diode stack, which drives two discrete power MOSFETs. The device operates as a solidstate replacement for singlepole, normally open (1 Form A) relay used for generalpurpose switching of signals and loads in high reliability applications. INPUT H L OUTPUT Selection Guide Lead Configuration Options CLOSED OPEN I O V O The devices feature logic level input control and very low output onresistance, making them suitable for both ac and dc loads. Connection A, as shown in the Functional Diagrams, allows the device to switch either ac or dc loads. Connection B, with the polarity and pin configuration as shown, allows the device to switch dc loads only. The advantage of Connection B is that the onresistance is significantly reduced, and the output current capability increases by a factor of two. The devices are convenient replacements for mechanical and solidstate relays where high component reliability with standard footprint lead configuration is desirable. Devices may be purchased with a variety of lead bend and plating options. See Selection Guide Lead Configuration Options table for details. Standard microcircuit drawing (SMD) parts are available for each package and lead style. The HSSR1, HSSR111, HSSR112, HSSR11E, and SMD , are designed to switch loads on 2 Vdc power systems. They meet V surge and ±V spike requirements. CAUTION Avago Technologies Part Number and Options Commercial HSSR1 MILPRF33 Class H HSSR111 HSSR112 MILPRF33 Class E HSSR11E Standard Lead Finish a Gold Plate Gold Plate Gold Plate Solder Dipped b Option #2 Option 2 Option 2 Butt Joint/Gold Plate a Option # Option Gull Wing/Soldered b Option #3 Option 3 Option 3 Crew Cut/Gold Plate a Option # Option SMD Part Number Prescript for all below Gold Plate a 9311HPC 9312HPC 9311EPC Solder Dipped b 9311HPA 9312HPA 9311EPA Butt Joint/Gold Plate a 9311HYC 9312HYC Butt Joint/Soldered b 9311HYA 9312HYA Gull Wing/Soldered b 9311HXA 9312HXA 9311EXA Crew Cut/Gold Plate a 9311HZC 9312HZC Crew Cut/Soldered b 9311HZA 9312HZA a. Gold Plate lead finish: Maximum gold thickness of leads is < μin. Typical is μin to 9 μin. b. Solder lead finish: Sn3/Pb3. Maximum Switching Frequency Care should be taken during repetitive switching of loads so as not to exceed the maximum output current, maximum output power dissipation, maximum case temperature, and maximum junction temperature. 2

3 HSSR1, HSSR111, HSSR112, HSSR11E, , Outline Drawing Outline Drawing Pin DIP Through Hole.1 (.2) MIN (.9) 2.9 (.1).3 (.39).29 (.) 2 (.) 1.2 (.).32 (.1 ) 3.1 (.1 ) MIN..1 (.2 ) NOTE: DIMENSIONS IN MILLIMETERS (INCHES)..13 (.32).1 (.22 ). (.29 ).2 (. ).33 (.13 ).3 (.29). (.3) Device Marking AVAGO DESIGNATOR AVAGO P/N DLA SMD [1] DLA SMD [1] PIN ONE/ ESD IDENT A QYYWWZ XXXXXX XXXXXXX XXX XXX 3 [1] QML PARTS ONLY Thermal Resistance Maximum Output MOSFET Junction to Case θjc = 1 C/W ESD Classification COMPLIANCE INDICATOR, [1] DATE CODE, SUFFIX (IF NEEDED) COUNTRY OF MFR. AVAGO CAGE CODE [1] MILSTD3, Method 31, Class 2 Hermetic Optocoupler Options Note: Dimensions in millimeters (inches). Option Description Surfacemountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on Commercial, Class H and E product..32 (.1).1 (.2) MIN (.9) 2.9 (.1) 1.1 (.) 1. (.).1 (.2).2 (.).33 (.13).3 (.29). (.3) 2 Lead finish is solder dipped rather than gold plated. This option is available on Commercial, Class H and E product. DLA Drawing (SMD) part numbers contain provisions for lead finish. 3 Surfacemountable hermetic optocoupler with leads cut and bent for gull wing assembly. This option is available on Commercial, Class H and E product. This option has solder dipped leads.. (.1). (.1).1 (.2) MIN (.9) 2.9 (.1) 1. (.) 1. (.).1 (.2).2 (.).33 (.13) 9. (.3) 9.91 (.39) (.2) 1.31 (.2) Surfacemountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on Commercial, Class H and E product. 3.1 (.1).1 (.2) MIN (.9) 2.9 (.1) 2 (.) TYP..2 (.).33 (.13).3 (.29). (.3) 3

4 HSSR1, HSSR111, HSSR112, HSSR11E, , Absolute Maximum Ratings Absolute Maximum Ratings Parameter Symbol Min Max Unit Storage Temperature Range T S 1 C Operating Ambient Temperature T A 12 C Junction Temperature T J 1 C Operating Case Temperature a T C 1 C Lead Solder Temperature 2 for s C Average Input Current 2 ma Peak Repetitive Input Current (Pulse Width < ms; duty cycle < %) Peak Surge Input Current (Pulse Width <.2 ms; duty cycle <.1%) PK ma PK surge ma Reverse Input Voltage V R V Average Output Current (See Figure 2.) Connection A Connection B Single Shot Output Current (See Figure 3.) Connection A (Pulse width < ms) Connection B (Pulse width < ms) Output Voltage Connection A Connection B Average Output Power Dissipation b (See Figure.) I O I OPK surge V O A A A A V V mw a. Maximum junction to case thermal resistance for the device is 1 C/W, where case temperature, T C, is measured at the center of the package bottom. b. For rating, see Figure. The output power P O rating curve is obtained when the part is handling the maximum average output current I O as shown in Figure 2. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Current (on) a Input Current (on) b (ON) 2 ma (ON) 2 ma Input Voltage (off) V F(OFF). V Operating Temperature T A 12 C a. Applies to HSSR112 and Hxx devices only. b. Applies to HSSR1, HSSR111, HSSR11E, Hxx, and Exx devices only.

5 HSSR1, HSSR111, HSSR112, HSSR11E, , Electrical Specifications Electrical Specifications T A = C to 12 C, unless otherwise specified. Parameter Symbol Group A Subgroup a Test Conditions Min Typ Max Unit Figure Note Output Withstand Voltage V O(OFF) 1, 2, 3 V F =.V, I O = μa 9 1 V Output OnResistance Connection A Output OnResistance Connection B R (ON) 1, 2, 3 = ma, I O = ma, (pulse duration 3 ms) = ma, I O = ma, (pulse duration 3 ms) R (ON) 1, 2, 3 = ma, I O = 1.A, (pulse duration 3 ms) = ma, I O = 1.A, (pulse duration 3 ms). Ω, b, c b, d.12.2 Ω, b, c.2 b, d Output Leakage Current I O(OFF) 1, 2, 3 V F =.V, V O = 9V μa Input Forward Voltage V F 1, 2, 3 = ma V 9 c = ma d Input Reverse Breakdown V R 1, 2, 3 I R = μa. V Voltage InputOutput Insulation I IO 1 RH %, t = s, V IO = 1 Vdc, T A = 2 C μa e, f Turn On Time t ON 9,, 11 = ma, V DD = 2V, I O = ma Turn Off Time t OFF 9,, 11 = ma, V DD = 2V, I O = ma 1.2. ms 1,, 11, 12, 13 = ma, V DD = 2V, I O = ma. d.2.2 ms 1,, 1, 1 = ma, V DD = 2V, I O = ma.2 d c c Output Transient Rejection 9 V PEAK = V, C M = pf, dvo dt C L = 1 pf, R M 1 MΩ InputOutput Transient Rejection dvio dt 9 V DD = V, V IO(PEAK) = V, R L = 2 kω, C L = 1 pf V/μs 1 V/μs 1 a. Commercial parts receive % testing at 2 C (Subgroups 1 and 9). SMD, Class H, and Class E parts receive % testing at 2 C, 12 C, and C (subgroups 1 and 9, 2 and, 3 and 11, respectively). b. During the pulsed R ON measurement (I O duration <3 ms), ambient (T A ) and case temperature (T C ) are equal. c. Applies to HSSR1, HSSR111, HSSR11E, Hxx and Exx devices only. d. Applies to HSSR112 and Hxx devices only. e. Device considered a twoterminal device: pins 1 through shorted together and pins through shorted together. f. This is a momentary withstand test, not an operating condition.

6 HSSR1, HSSR111, HSSR112, HSSR11E, , Typical Characteristics Typical Characteristics All typical values are at T A = 2 C, (ON) = ma, V F (OFF) =.V unless otherwise specified. Parameter Symbol Test Conditions Typ Unit Figure Output OffCapacitance C O(OFF) V O = 2V, f = 1 MHz 1 pf 1 Output Offset Voltage a V OS = ma, I O = ma 2 μv 19 Input Diode Temperature Coefficient ΔV F /ΔT A = ma 1. mv/ C Input Capacitance b InputOutput Capacitance c C IN V F = V, f = 1 MHz 2 pf C IO V IO = V, f = 1 MHz 1. pf InputOutput Resistance c R IO V IO = V, t = s 13 Ω Turn On Time With Peaking d t ON PK = ma, SS = ma,.22 ms 1 V DD = 2V, I O = ma a. V OS is a function of, and is defined between pins and, with pin as the reference. V OS must be measured in a stable ambient (free of temperature gradients). b. Zerobias capacitance measured between the LED anode and cathode. c. Device considered a twoterminal device: pins 1 through shorted together and pins through shorted together. d. For a faster turnon time, the optional peaking circuit shown in Figure 1 can be implemented. Figure 1 Recommended Input Circuit HSSR11x V CC (V) IN R2 12 R1 33 R3 V F C 1 μf / ACTOO 1/ ACTOO* R1 = REQUIRED CURRENT LIMITING RESISTOR FOR (ON) = ma. R2 = PULLUP RESISTOR FOR V F (OFF) < mv; (V CC V OH ) < mv, OMIT R2. R3, C = OPTIONAL PEAKING CIRCUIT. * USE SECOND GATE IF (PK) > ma REMINDER: TIE ALL UNUSED INPUTS TO GROUND OR V CC R3 ( ) TYPICAL VALUES (PK) (ma) (NO PK) 2 HSSR11x t ON (ms)

7 I HSSR1, HSSR111, HSSR112, HSSR11E, , Typical Characteristics Figure 2 Maximum Average Output Current Rating vs. Ambient Temperature Figure 3 Single Shot (NonRepetitive) Output Current vs. Pulse Duration I O OUTPUT CURRENT A....2 CONNECTION A ma CA = C/W CA = C/W S U R G E O U TP U T C U R R EN T A P K CONNECTIONB CONNECTIONA ma T A AMBIENT TEMPERATURE C 12 1 O 3 2 PULSE DURATION ms Figure Output Power Rating vs. Ambient Temperature Figure Normalized Typical Output Withstand Voltage vs. Temperature P O OUTPUT POWER DISSIPATION W....2 CONNECTION A ma CA = C/W CA = C/W T A AMBIENT TEMPERATURE C 12 1 NORMALIZED TYPICAL OUTPUT WITHSTAND VOLTAGE V F =. V I O = μa 2 3 T A AMBIENT TEMPERATURE C 9 12 Figure Normalized Typical Output Resistance vs. Temperature Figure Typical On State Output IV Characteristics NORMALIZED TYPICAL OUTPUT RESISTANCE CONNECTION A ma I O = ma (PULSE DURATION 3 ms) I O OUTPUT CURRENT A CONNECTION A I O ma I O (PULSE DURATION 3 ms) T A = 12 C T A = 2 C T A = C. 2 3 T A AMBIENT TEMPERATURE C V O OUTPUT VOLTAGE V.

8 HSSR1, HSSR111, HSSR112, HSSR11E, , Typical Characteristics Figure Typical Output Leakage Current vs. Temperature Figure 9 Typical Input Forward Current vs. Input Forward Voltage I O (OFF) OUTPUT LEAKAGE CURRENT A 9 11 V F =. V V O = 9 V 2 3 T A TEMPERATURE C 9 12 INPUT FORWARD CURRENT A T A = 12 C V F INPUT FORWARD VOLTAGE V T A = 2 C T A = C Figure Switching Test Circuit for t ON, t OFF V DD V O % P.W. = 1 ms % % 9% MONITOR PULSE GEN. Z O = t f = t r = ns R (MONITOR) 2 V F HSSR11x R L C L = 2 pf V O MONITOR NODE (C L INCLUDES PROBE AND FIXTURE CAPACITANCE) t ON t OFF GND GND

9 HSSR1, HSSR111, HSSR112, HSSR11E, , Typical Characteristics Figure 11 Typical Turn On Time vs. Temperature Figure 12 Typical Turn On Time vs. Input Current T ON TURN ON TIME ms = ma V DD = 2 V I O = ma T ON TURN ON TIME ms V DD = 2 V I O = ma T A = 2 C T A TEMPERATURE C INPUT CURRENT ma Figure 13 Typical Turn On Time vs. Voltage Figure 1 Typical Turn Off Time vs. Temperature T ON TURN ON TIME ms V DD VOLTAGE V CONNECTION A = ma I O = ma T A = 2 C 9 T OFF TURN OFF TIME μs T A TEMPERATURE C = ma V DD = 2 V I O = ma 12 Figure 1 Typical Turn Off Time vs. Input Current Figure 1 Typical Output Off Capacitance vs. Output Voltage T OFF TURN OFF TIME μs INPUT CURRENT ma V DD = 2 V I O = ma T A = 2 C C O(OFF) OUTPUT OFF CAPACITANCE pf f = 1 MHz T A = 2 C 2 V O(OFF) OUTPUT VOLTAGE V 2 3 9

10 HSSR1, HSSR111, HSSR112, HSSR11E, , Typical Characteristics Figure 1 Output Transient Rejection Test Circuit HSSR11x INPUT OPEN V F V PEAK C M R M V M MONITOR NODE PULSE GENERATOR C M INCLUDES PROBE AND FIXTURE CAPACITANCE R M INCLUDES PROBE AND FIXTURE RESISTANCE 9% 9% V PEAK % % t r t f V M (MAX) V dv O d t = (.) V (PEAK) t r OR (.) V (PEAK) t f OVERSHOOT ON V PEAK IS TO BE %. Figure 1 InputOutput Transient Rejection Test Circuit V DD HSSR11x R L 1 V O S 1 B A V F 2 3 C L (C L INCLUDES PROBE PLUS FIXTURE CAPACITANCE ) 9% V IN 9% V IO PULSE GENERATOR V IO(PEAK) % % tr t f S 1 AT A (V F = V) V O(OFF) (min) 3.2 V V O(OFF) V O(ON) S 1 AT B ( = ma) 11 OR ( = ma) V O(ON) (max). dv IO dt (.) V IO(PEAK) = OR t r (.) V IO(PEAK) t f OVERSHOOT ON V IO(PEAK) IS TO BE %

11 HSSR1, HSSR111, HSSR112, HSSR11E, , Applications Information Figure 19 Voltage Offset Test Setup Figure 21 Thermal Model ISOTHERMAL CHAMBER T je T jf1 T jd T jf2 HSSR11x V OS DIGITAL NANOVOLTMETER T C CA T A Figure 2 BurnIn Circuit V IN. V R IN 2 NOTE: IN ORDER TO DETERMINE V OUT CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST BE MEASURED FOR THE BURNIN BOARDS TO BE USED. THEN, KNOWING CA, DETERMINE THE CORRECT OUTPUT CURRENT PER FIGURES 2 AND TO INSURE THAT THE DEVICE MEETS THE DERATING REQUIREMENTS AS SHOWN. Applications Information Thermal Model HSSR11x The steadystate thermal model for the HSSR11x is shown in Figure 21. The thermal resistance values given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistances between the LED and other internal nodes are very large in comparison with the other terms and are omitted for simplicity. The components do, however, interact indirectly through θ CA, the casetoambient thermal resistance. All heat generated flows through θ CA, which raises the case temperature T C accordingly. The value of θ CA depends on the conditions of the board design and is, therefore, determined by the designer. The maximum value for each output MOSFET junctiontocase thermal resistance is specified as 1 C/W. The thermal resistance from FET driver junctiontocase is also 1 C/W/W. The power dissipation in the FET driver, however, is negligible in comparison to the MOSFETs. R OUT R OUT V O (SEE NOTE) T je = LED JUNCTION TEMPERATURE T jf1 = FET 1 JUNCTION TEMPERATURE T jf2 = FET 2 JUNCTION TEMPERATURE T jd = FET DRIVER JUNCTION TEMPERATURE T C = CASE TEMPERATURE (MEASURED AT CENTER OF PACKAGE BOTTOM) T A = AMBIENT TEMPERATURE (MEASURED " AWAY FROM THE PACKAGE) CA = CASETOAMBIENT THERMAL RESISTANCE ALL THERMAL RESISTANCE VALUES ARE IN C/W OnResistance and Rating Curves The output onresistance, R ON, specified in this data sheet, is the resistance measured across the output contact when a pulsed current signal (I O = ma) is applied to the output pins. The use of a pulsed signal ( 3 ms) implies that each junction temperature is equal to the ambient and case temperatures. The steadystate resistance, R SS, on the other hand, is the value of the resistance measured across the output contact when a DC current signal is applied to the output pins for a duration sufficient to reach thermal equilibrium. R SS includes the effects of the temperature rise of each element in the thermal model. Rating curves are shown in Figure 2 and Figure. Figure 2 specifies the maximum average output current allowable for a given ambient temperature. Figure specifies the output power dissipation allowable for a given ambient temperature. Above C (for θ CA = C/W) and C (for θ CA = C/W/W), the maximum allowable output current and power dissipation are related by the expression R SS = P O(max) / (I O(max) ) 2 from which R SS can be calculated. Staying within the safe area assures that the steadystate junction temperatures remain less than 1 C. As an example, for T A =9 C and θ CA = C/W, Figure 2 shows that the output current should be limited to less than ma. A check with Figure shows that the output power dissipation at T A = 9 C and I O = ma, is limited to less than.3w. This yields an R SS of.9ω. 11

12 HSSR1, HSSR111, HSSR112, HSSR11E, , Design Considerations for Replacement of Electromechanical Relays Design Considerations for Replacement of Electromechanical Relays The HSSR11x family can replace electromechanical relays with comparable output voltage and current ratings. The following design issues need to be considered in the replacement circuit. Input Circuit The drive circuit of the electromechanical relay coil needs to be modified so that the average forward current driving the LED of the HSSR11x does not exceed 2 ma. A nominal forward drive current of ma is recommended. A recommended drive circuit with V VCC and CMOS logic gates is shown in Figure 1. If higher VCC voltages are used, adjust the current limiting resistor to a nominal LED forward current of ma. One important consideration to note is that when the LED is turned off, no more than.v forward bias should be applied across the LED. Even a few microamps of current may be sufficient to turn on the HSSR 11x, although it may take a considerable time. The drive circuit should maintain at least ma of LED current during the ON condition. If the LED forward current is less than the ma level, it causes the HSSR11x to turn on with a longer delay. In addition, the power dissipation in the output power MOSFETs increases, which, in turn, may violate the power dissipation guidelines and affect the reliability of the device. Output Circuit Unlike with electromechanical relays, when considering solidstate relays, the designer should pay careful attention to the output onresistance. The previous section, OnResistance and Rating Curves, describes the issues that need to be considered. In addition, for strictly dc applications, the designer has an advantage using Connection B, which has twice the output current rating as Connection A. Furthermore, for dconly applications, with Connection B the onresistance is considerably less when compared to Connection A. Output overvoltage protection is yet another important design consideration when replacing electromechanical relays with the HSSR11x. The output power MOSFETs can be protected using Metal oxide varistors (MOVs) or TransZorbs against voltage surges that exceed the 9V output withstand voltage rating. Examples of sources of voltage surges are inductive load kickbacks, lightning strikes, and electrostatic voltages that exceed the specifications on this data sheet. For more information on output load and protection, refer to Application Note. References Application Note, Low OnResistance Solid State Relays for High Reliability Applications. Reliability Data for HSSR111, HSSR112, and HSSR11E. 12

13 For product information and a complete list of distributors, please go to our web site: the pulse logo, Connecting everything, Avago Technologies, Avago, and the A logo are among the trademarks of in the United States, certain other countries and/or the EU. Copyright All Rights Reserved. The term "" refers to Limited and/or its subsidiaries. For more information, please visit reserves the right to make changes without further notice to any products or data herein to improve reliability, function, or design. Information furnished by is believed to be accurate and reliable. However, does not assume any liability arising out of the application or use of this information, nor the application or use of any product or circuit described herein, neither does it convey any license under its patent rights nor the rights of others. AV233EN October 19, 21

HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E V/1.0 Ω, Hermetically Sealed, Power MOSFET Optocoupler. Features.

HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E V/1.0 Ω, Hermetically Sealed, Power MOSFET Optocoupler. Features. HSSR11, HSSR111, HSSR112, HSSR11E 9291 9 V/1. Ω, Hermetically Sealed, Power MOSFET Optocoupler Data Sheet Description The HSSR11, HSSR111, HSSR112, HSSR11E and SMD 9291 are single channel power MOSFET