Applications: WEIGHT: grams (typical)
|
|
- Rudolph Stevenson
- 5 years ago
- Views:
Transcription
1 RADIATION TOLERANT VDC A POWER MOSFET OPTOCOUPLER Mii Features: This Design Tested to krad (Si) Total Dose Hermetically Sealed in Surface Mount Package Low On-resistance A Continuous Output Current Performance over - C to + C Optically Coupled Input/Output Isolation Tested to VDC Shock and Vibration Resistant Applications: Satellite/Space Systems Military/High Reliability Systems Power Distribution/Switching Solenoid Driver Stepper Motor Driver Switching Heaters DESCRIPTION The is a radiation tolerant Power MOSFET Optocoupler designed for military and space applications. This light-weight device is resistant to damage from severe shock and vibration, and is immune to contact related problems inherent in electro-mechanical relays. The device is enclosed in a hermetic metal package to ensure reliability in harsh environments. Effective isolation of VDC between control and load circuits is achieved through the use of optical coupling. Functionally, the device operates as a single-pole single-throw, normally open ( Form A) DC solid-state relay. The SSR is actuated by an input current of to ma, which can be supplied from standard logic types such as opencollector TTL. Output is provided by a power MOSFET exhibiting very low R DS(ON) and capable of carrying a continuous current of amperes. This design has demonstrated it will function with minimal degradation after exposure to krad (Si) total dose. This device is available in a variety of quality levels from COTS to class K including any custom screening requirements. The basic data sheet part is environmentally screened to H level in accordance with Table C-IX of MIL-PRF-8. RADIATION TOLERANT This device contains radiation hardened components and/or other features that provide a level of radiation tolerance. Micropac does not guarantee any level of radiation hardness. Specific lot testing is required to determine the level of radiation hardness. Micropac does not offer this device as compliant to Appendix G (RHA Requirements) of MIL-PRF-8. ABSOLUTE MAXIMUM RATINGS Output Voltage... VDC Continuous Output current... A Peak Output Current ()... A Storage Temperature Range...-6ºC to +ºC Operating Junction Temperature... -ºC to +ºC Lead Solder Temperature for seconds...ºc Continuous Input Current... ma Peak Input Current ()... ma Reverse Input Voltage... 6 VDC Power Dissipation ()... W Linear Derating Factor.... W/ C WEIGHT:... grams (typical) Pg. of 7
2 Radiation Tolerant VDC A Power MOSFET Optocoupler RECOMMENDED OPERATING CONDITIONS: Parameter Symbol Min. Max. Units Output Voltage V O (OFF) VDC Continuous Output Current I O (ON) A Input Current (on) I F (ON) ma Input Voltage (off) V F (OFF) VDC Operating Case Temperature T C - C ELECTRICAL SPECIFICATIONS (Pre-Irradiation) T C = - C to + C unless otherwise specified Parameter Sym. Min. Typ.* Max. Units Test Conditions Notes Output On-Resistance R (ON)..6 Ω Output Leakage Current I O (OFF) < µa I F = ma I O = A Pulse width = ms Duty cycle % V F = VDC V O = VDC Input Forward Voltage V F..7. VDC I F = ma Input Reverse Breakdown Voltage V R 6 VDC I R = µa Input-Output Leakage I I-O µa Turn-On Time t ON. 8. ms Turn-Off time t OFF. ms Rise Time t R. 6. ms Fall Time t F.9. ms RH %, t = s V I-O = VDC T C = C I F = ma I O = A Pulse width = ms, Figures, Figures, Duty cycle % 6, Figure Thermal Resistance (junction-case) θ JC C/W Output Off-Capacitance C O (OFF).8 nf Input Capacitance C IN 7 pf Input-Output Capacitance C I-O.6 pf * All typical values are at T C = C V O = 8 VDC f = MHz V F = V f = MHz V I-O = V f = MHz Pg. of 7
3 Radiation Tolerant VDC - A Power MOSFET Optocoupler Notes:. Non-repetitive, pulse width ms, T C = C (see Figure 6).. Non-repetitive, pulse width µs, T C = C.. Case Temperature T C = C (see Figure 7).. Input pins shorted together and output pins shorted together.. Input-output potential applied momentarily, not an operating condition. 6. Rise time is measured from % to 9% of load current (9% to % of V O ). Fall time is measured from 9% to % of load current (% to 9% of V O ). CAUTION: Care should be taken so as not to exceed the maximum power dissipation and maximum junction temperature when repetitively switching loads. INPUT ON OFF OUTPUT ON OFF Figure. Truth Table Figure. Terminal Connections +V C +DC SUPPLY R S R LOAD -VC TOP VIEW OUTPUT GND Figure. Terminal Connections Pg. of 7
4 Radiation Tolerant VDC - A Power MOSFET Optocoupler Z O = t R = t F = ns PULSE GENERATOR V LOAD = V R L = V O MONITOR C L = pf (INCLUDES PROBE AND FIXTURE CAPACITANCE) I F MONITOR (mv/ma) % % I F V O 9% % t ON toff Figure. Switching Waveforms and Test Circuits Turn-on Time (ms) ma ma ma Turn-off Time (ms) Figure. Turn-on Time vs. Case Temperature for Different Values of I F (typical data). Figure. Turn-off Time vs. Case Temperature with I F = to ma (typical data). Pg. of 7
5 Radiation Tolerant VDC - A Power MOSFET Optocoupler Maximum Peak Output Current (A) Maximum Average Power Dissipation (W) Figure 6. Maximum Non-repetitive Output Current vs. Case Temperature (pulse width ms). Figure 7. Maximum Average Output Power Dissipation vs. Case Temperature. TOTAL DOSE TEST RESULTS Disclaimer: The data of representative units irradiated in Cobalt-6 chamber is only typical of one lot of solid state relays. Micropac does not guarantee performance of its SSR to these radiation levels. Individual lots have to be screened to guarantee the performance. Turn-On Time, ms Rise Time, ms Figure 8. Turn-On Time vs Total Dose Figure 9. Rise Time vs Total Dose at V out = V, R load = Ω, at V out = V, R load = Ω, I in = ma, % duty cycle. I in = ma, % duty cycle. Pg. of 7
6 Radiation Tolerant VDC - A Power MOSFET Optocoupler.. Turn-Off Time, ms. Fall Time, ms... Figure. Turn-Off Time vs Total Dose Figure. Fall Time vs Total Dose at V out = V, R load = Ω, at V out = V, R load = Ω, I in = ma, % duty cycle. I in = ma, % duty cycle.. 8 On-Resistance, ohm.. Output Leakage Current, na 6 Figure. On-Resistance vs Total Dose Figure. Output Leakage Current vs Total Dose at I F = ma, I out = ma for s. at V F = V, V out = V. Pg. 6 of 7
7 Radiation Tolerant VDC - A Power MOSFET Optocoupler Input Forward Voltage, VDC Input Reverse Voltage, VDC 8 6 Figure. Input Forward Voltage vs Total Dose at I F = ma. Figure. Input Reverse Voltage vs Total Dose at I R = µa..7 CASE OUTLINE ±...8 Ø.8 (X).. MAX. ±. DIA ( PLCS).9 REF.6 ±. Pg. 7 of 7
Mii RADIATION TOLERANT, 90V - 0.8A DUAL POWER MOSFET OPTOCOUPLERS. Features: Applications:
55 RADIATION TOLERANT, 90V - 0.8A DUAL POWER MOSFET OPTOCOUPLERS Mii Features: Designed for 100 krad(si) Total Dose 8-Pin Dual-In-Line Hermetic Package Performance over 55 C to +15 C Compact Isolation
More informationPOWER MOSFET OPTOCOUPLER SPST NORMALLY CLOSED
5259 POWER MOSFET OPTOCOUPLER SPST NORMALLY CLOSED Features: Applications: Hermetically Sealed 8Pin DualInLine package Normally Closed Contact Performance over 55 C to 125 C Ambient Temperature Range ±400
More informationHigh Reliability, DC Solid State Relay
High Reliability, DC Solid State Relay esigned for the highest levels of reliability, the Cole R-series D Solid State Relay has no moving parts, making it immune to all contact related problems such as
More informationRadiation Hardended, 100V, Single 10A, Solid State Relay RDHA710FR10A1NK. Product Summary
PD-97579 Radiation Hardended, 0V, Single, Solid State Relay Product Summary Part Number Voltage Current Configuration Rad Level 0V Single DC 0K 22 PIN FLT PCK Description The RDH7FR1NX is a radiation hardened
More informationRadiation Hardended, Solid-State Relay with Buffered Inputs. RDHA710SE10A2SK Dual, 100V, 10A. Product Summary g
PD-96982 Radiation Hardended, Solid-State Relay with Buffered Inputs RDHA710SE10A2SK Dual, 100V, 10A Product Summary g Part Breakdown Current tr / tf Logic Drive Number Voltage Voltage RDHA710SE10A2SK
More informationApplications: Signal Isolation. The is a Current-to-Current Opto-Isolator designed for high temperature applications to 200ºC.
52458 Dual Current-to-Current Opto-Isolator, High (200 C) Mii Features: Hermetically Sealed Package Optically Coupled Input/Output Isolation Tested to 1000 VDC 200 C Operation Applications: Signal Isolation
More informationRDHA701FP10A8CK RDHA701FP10A8QK
PD-95878F RDHA701FP10A8CK RADIATION HARDENED, OCTAL BUFFERED and NON-BUFFERED SOLID STATE RELAY 100V, 1.3A Product Summary Part Number Voltage Current tr / tf Buffer RDHA701FP10A8CK 100V 1.3A Fast None
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationPart Number Radiation Level RDS(on) I D IRHLUC7970Z4 100 krads(si) A IRHLUC7930Z4 300 krads(si) A LCC-6
PD-97574A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 6V, DUAL P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).6 -.65A IRHLUC793Z4 3 krads(si).6
More informationIRHNA JANSR2N7524U2 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94604D TECHNOLOGY
PD-9464D IRHNA59764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 6V, P-CHANNEL REF: MIL-PRF-195/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA59764
More informationIRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY
PD-9386G IRHNA57264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 25V, N-CHANNEL REF: MIL-PRF-95/684 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57264SE
More informationIRHNJ57230SE JANSR2N7486U3 R 5 200V, N-CHANNEL REF: MIL-PRF-19500/704 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-93836C TECHNOLOGY
PD-93836C IRHNJ5723SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, N-CHANNEL REF: MIL-PRF-95/74 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ5723SE
More informationIRHYS9A7130CM JANSR2N7648T3
PD-97844A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) V, N-CHANNEL REF: MIL-PRF-95/775 R 9 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads (Si) 35m 3A* IRHYS9A33CM
More informationIRHN7150 JANSR2N7268U
PD-90720F IRHN7150 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 100V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHN7150
More informationI D. Operating Junction and -55 to T STG. C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g
RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) PD-93789G IRHF573 V, N-CHANNEL REF: MIL-PRF-95/7 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) QPL Part Number IRHF573 krads(si).8.7a
More informationHCS80R380R 800V N-Channel Super Junction MOSFET
HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply
More informationTelecommunication Switching Equipment Reed Relay Replacement 28 Vdc, 24 Vac, 48 Vdc Load Driver Industrial Relay Coil Driver
60 V/0.7 Ohm, General Purpose, 1 Form A, Solid State Relay Technical Data HSSR-8060 Features Compact Solid-State Bidirectional Switch Normally-Off Single-Pole Relay Function (1 Form A) 60 V Output Withstand
More informationR 7 IRHLNA N7604U2 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) PD-97177C TECHNOLOGY
PD-9777C IRHLNA7764 2N764U2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 6V, N-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNA7764 krads(si).2
More informationHCD80R1K4E 800V N-Channel Super Junction MOSFET
HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationIRHNA57Z60 JANSR2N7467U2 R 5 30V, N-CHANNEL REF: MIL-PRF-19500/683 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91787J TECHNOLOGY
PD-91787J IRHNA57Z6 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57Z6 1 krads(si) 3.5m 75A* IRHNA53Z6 3 krads(si) 3.5m
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationIRHNJ597Z30 JANSR2N7519U3 R 5 30V, P-CHANNEL REF: MIL-PRF-19500/732 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94661C TECHNOLOGY
PD-9466C IRHNJ597Z3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 3V, P-CHANNEL REF: MIL-PRF-95/732 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ597Z3
More informationIRHY57234CMSE JANSR2N7556T3 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) PD-93823D
PD-93823D RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number 100 krads(si)
More informationIRHNA57064 JANSR2N7468U2 R 5 60V, N-CHANNEL REF: MIL-PRF-19500/673 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-91852J TECHNOLOGY
PD-91852J IRHNA5764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA5764 1 krads(si) 5.6m 75A* IRHNA5364 3 krads(si) 5.6m
More informationGND 0.3VDC to GND + 2.5VDC. GND 0.3VDC to V IN + 0.3VDC
56000 DC/DC Non-Isolated Point of Load Converter PRODUCT PREVIEW Product Status: This document contains information on a product under development. Micropac reserves the right to change or discontinue
More informationIRHLNM7S7110 2N7609U8
PD-97888 IRHLNM7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.2) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMN7S7 krads(si).29 6.5A IRHLMN7S3
More informationAbsolute Maximum Ratings (Per Die)
PD-97887 IRHLG7S7 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, QUAD N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG7S7 krads(si).33.8a IRHLG7S3
More informationR 7 2N7624U3 IRHLNJ V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-97302D TECHNOLOGY.
PD-9732D 2N7624U3 IRHLNJ79734 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, P-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNJ79734 krads(si).72-22a*
More informationUNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET 25A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche
More informationIRHY63C30CM 300k Rads(Si) A TO-257AA
PD-95837D 2N7599T3 IRHY67C3CM RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHY67C3CM k Rads(Si) 3. 3.4A IRHY63C3CM
More informationAbsolute Maximum Ratings (Per Die)
PD-9778A IRHLG77 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-36AB) V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLG77 krads(si).285.8a IRHLG73 3 krads(si).285.8a
More informationHFP4N65F / HFS4N65F 650V N-Channel MOSFET
HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationN-Channel Enhancement-Mode Vertical DMOS FETs
2N72 N-Channel Enhancement-Mode Vertical DMOS FETs Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability
More informationSeries HD 2A, 60Vdc, True Output Status Feedback, Short-Circuit Protected DC Solid-State Relay
Part* Number HD00CFW DESC Drawing Number HD00CFY 88062-008 HD02CFW HD02CFY 88062-006 HD20CFW HD20CFY 88062-004 HD22CFW HD22CFY 88062-002 HD24CFW HD24CFY Relay Description Solid State Relay (SSR) SSR with
More informationIRHNS57160 R 5 100V, N-CHANNEL. RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) PD-97879A TECHNOLOGY. Product Summary
PD-97879A IRHNS576 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNS576 krads(si).2 75A* IRHNS536 3 krads(si).2
More informationQuad SPST JFET Analog Switch SW06
a FEATURES Two Normally Open and Two Normally Closed SPST Switches with Disable Switches Can Be Easily Configured as a Dual SPDT or a DPDT Highly Resistant to Static Discharge Destruction Higher Resistance
More information8-Channel Fault-Protected Analog Multiplexer
358 8-Channel Fault-Protected Analog Multiplexer FEATURES: RAD-PAK technology-hardened against natural space radiation Total dose hardness: - > 50 krad (Si), depending upon space mission Excellent Single
More informationIRHF57234SE 100 krads(si) A TO-39
PD-9383C IRHF57234SE RADIATION HARDENED POWER MOSFET THRU-HOLE TO-25AF (TO-39) 25V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHF57234SE krads(si).42 5.2A TO-39
More informationAC/DC to Logic Interface Optocouplers Technical Data
H AC/DC to Logic Interface Optocouplers Technical Data HCPL-37 HCPL-376 Features Standard (HCPL-37) and Low Input Current (HCPL-376) Versions AC or DC Input Programmable Sense Voltage Hysteresis Logic
More informationIRHNA9160 JANSR2N7425U
PD-91433D IRHNA9160 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 100V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part
More informationQPL Part Number JANSR2N7270 IRHM krads(si) A JANSF2N7270 IRHM krads(si) A JANSG2N7270 JANSH2N7270 TO-254
PD-90673C IRHM7450 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 500V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHM7450
More informationT C =25 unless otherwise specified
WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
More informationIRHI7360SE. 400V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-259AA) PD-91446B
PD-91446B IRHI7360SE RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-259AA) 400V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHI7360SE 100 krads(si) 0.20
More informationHCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET
HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationIRHNJ63C krads(si) A SMD-0.5
PD-9798D 2N7598U3 IRHNJ67C3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNJ67C3 krads(si) 3. 3.4A IRHNJ63C3
More informationIRHM krads(si) A JANSR2N7269 IRHM krads(si) A JANSH2N7269 TO-254AA
PD-90674G IRHM7250 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 200V, N-CHANNEL REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part
More information2N7622U2 IRHLNA797064
PD-97174B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE-MOUNT (SMD-2) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).17-56a* IRHLNA79364 3 krads(si).17-56a*
More informationIRFF230 JANTX2N6798 JANTXV2N6798
PD-90431E JANTX2N6798 JANTXV2N6798 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) 200V, N-CHANNEL REF: MIL-PRF-19500/557 Product Summary Part Number BVDSS RDS(on) I
More informationUNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)
UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC 2NNPP06 is a complementary enhancement mode MOSFET H-BRIDGE, it uses
More informationIRHMS JANSR2N7524T1 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) PD-94713E
PD-9473E IRHMS59764 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) 6V, P-CHANNEL REF: MIL-PRF-95/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number
More informationFeatures. Symbol JEDEC TO-204AA GATE (PIN 1)
Semiconductor BUZB Data Sheet October 998 File Number 9. [ /Title (BUZ B) /Subject A, V,. hm, N- hannel ower OS- ET) /Author ) /Keyords Harris emionducor, N- hannel ower OS- ET, O- AA) /Creator ) /DOCIN
More informationData Sheet. ASSR-1218, ASSR-1219 and ASSR-1228 Form A, Solid State Relay (Photo MOSFET) (60V/0.2A/10Ω) Features. Description. Functional Diagram
ASSR-8, ASSR-9 and ASSR-8 Form A, Solid State Relay (Photo MOSFET) (0V/0.A/0Ω) Data Sheet Description The ASSR-XX Series consists of an AlGaAs infrared light-emitting diode (LED) input stage optically
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
More informationT C =25 unless otherwise specified
800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate
More informationUNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers
More informationUNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the
More informationASSR-1611 High Current, 1 Form A, Solid State Relay (MOSFET) (60V/2.5A/0.1Ω) Features. Applications
ASSR- High Current, Form A, Solid State Relay (MOSFET) (V/.A/.Ω) Data Sheet Description The ASSR- is specifically designed for high current applications, commonly found in the industrial equipments. The
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such
More informationHFI50N06A / HFW50N06A 60V N-Channel MOSFET
HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche
More informationIRF130, IRF131, IRF132, IRF133
October 1997 SEMICONDUCTOR IRF13, IRF131, IRF132, IRF133 12A and 14A, 8V and 1V,.16 and.23 Ohm, N-Channel Power MOSFETs Features Description 12A and 14A, 8V and 1V r DS(ON) =.16Ω and.23ω Single Pulse Avalanche
More informationHCS70R350E 700V N-Channel Super Junction MOSFET
HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationUNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220 The UTC 10N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide
More informationUNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide
More informationJANSR2N7380. Radiation Hardened N-Channel MOSFET Qualified per MIL-PRF-19500/614. TO-257AA Package. Qualified Levels: JANSD, JANSR and JANSF
Radiation Hardened N-Channel MOSFET Qualified per MIL-PRF-19500/614 QPL RANGE and RAD LEEL Radiation Level JANSD2N7380 JANSR2N7380 JANSF2N7380 TID 10 Krad 100 Krad 300 Krad DESCRIPTION These products are
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 11A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N9 is a N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with planar stripe
More informationUNISONIC TECHNOLOGIES CO., LTD UTT52N15H
UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology.
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 14.7A, 1V (D-S) N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N1 is an N-Channel enhancement MOSFET, it uses UTC s advanced technology to provide customers with a minimum
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-Channel enhancement MOSFET, it uses UTC s advanced technology to provide customers with a minimum on-state
More informationGP2M020A050H GP2M020A050F
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A
More informationUNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
More informationData Sheet. ASSR-4118, ASSR-4119 and ASSR Form A, Solid State Relay (Photo MOSFET) (400V/0.10A/35 ) Features. Description. Functional Diagram
ASSR-, ASSR-9 and ASSR- Form A, Solid State Relay (Photo MOSFET) (00V/0.0A/ ) Data Sheet Description The ASSR-XX Series consists of an AlGaAs infrared light-emitting diode (LED) input stage optically coupled
More informationUNISONIC TECHNOLOGIES CO., LTD UT50N04
UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
More informationHCD80R600R 800V N-Channel Super Junction MOSFET
HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationUNISONIC TECHNOLOGIES CO., LTD UTT50P04
UNISONIC TECHNOLOGIES CO., LTD UTT50P04-40V, -50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
More informationUNISONIC TECHNOLOGIES CO., LTD UTT18P10
UNISONIC TECHNOLOGIES CO., LTD UTT18P10-100V, -18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
More informationIRHG V, Combination 2N-2P CHANNEL R TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) PD-94246D
PD-94246D IRHG567 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36AB) V, Combination 2N-2P CHANNEL R TECHNOLOGY 5 Product Summary Part Number Radiation Level RDS(on) I D IRHG567 krads(si).29.6a IRHG563
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC s advanced technology to provide customers with high switching speed
More informationNOTE: This product has been replaced with UT28F256QLE or SMD device types 09 and 10.
NOTE: This product has been replaced with UT28F256QLE or SMD 5962-96891 device types 09 and 10. 1 Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet December 2002 FEATURES Programmable,
More informationUNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC s advanced trench technology
More information2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary
PD-97573 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 2N767UC IRHLUC77Z4 6V, DUAL-N CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUC77Z4 K Rads (Si).75Ω.89A
More informationDual Channel, High Speed Optocouplers Technical Data
Dual Channel, High Speed Optocouplers Technical Data HCPL-2530 HCPL-2531 HCPL-4534 HCPL-0530 HCPL-0531 HCPL-0534 Features 15 kv/µs Minimum Common Mode Transient Immunity at V CM = 1500 V (HCPL-4534/0534)
More informationUNISONIC TECHNOLOGIES CO., LTD UFZ24N-F
UNISONIC TECHNOLOGIES CO., LTD UFZ24N-F 17A, 55V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFZ24N-F is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with
More informationIRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D
PD-9379D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF5734 K Rads (Si).48Ω 2A* JANSR2N7492T2 IRHF5334 3K Rads (Si).48Ω 2A*
More informationIRHLMS RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 60V, N-CHANNEL TECHNOLOGY PD-97836
PD-97836 IRHLMS7764 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLMS7764 krads(si).2 45A*
More informationUNISONIC TECHNOLOGIES CO., LTD UTT100N06
UNISONIC TECHNOLOGIES CO., LTD UTT1N6 1A, 6V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT1N6 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers
More informationHCPL-576x* AC/DC to Logic Interface Hermetically Sealed Optocouplers
HCPL-576x* 5962-8947701 AC/DC to Logic Interface Hermetically Sealed Optocouplers Data Sheet Description These devices are single channel, hermetically sealed, voltage/current threshold detection optocouplers.
More informationTECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A
2N7632UC IRHLUC767Z4 RADIATION HARDENED 6V, Combination N-P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level R DS(on) I D CHANNEL IRHLUC767Z4
More informationAPT8052BLL APT8052SLL
APT82BLL APT82SLL 8V A.2Ω Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly
More informationIRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary
PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω
More informationData Sheet. Hermetically Sealed, Very High Speed, Logic Gate Optocouplers HCPL-540X,* , HCPL-543X, HCPL-643X,
Hermetically Sealed, Very High Speed, Logic Gate Optocouplers Data Sheet HCPL-540X,* 596-89570, HCPL-543X, HCPL-643X, 596-8957 *See matrix for available extensions. Description These units are single and
More informationIRHF7230 JANSR2N V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
PD - 90672E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF7230 100K Rads (Si) 0.35Ω 5.5A JANSR2N7262 IRHF3230 300K Rads (Si)
More informationASSR-5211 High Current, 1 Form A, Solid State Relay (MOSFET) (600V/0.2A/16W) Features. Applications
ASSR- High Current, Form A, Solid State Relay (MOSFET) (V/.A/W) Data Sheet Lead (Pb) Free RoHS fully compliant RoHS fully compliant options available; -xxxe denotes a lead-free product Description The
More informationIRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching
PD-9586D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ673 JANSR2N7587U3 V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
More information