NLAS4051. Analog Multiplexer/ Demultiplexer. TTL Compatible, Single Pole, 8 Position Plus Common Off
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1 NLAS4 Analog Multiplexer/ Demultiplexer TTL Compatible, SinglePole, 8Position Plus Common Off The NLAS4 is an improved version of the MC4 and MC74HC4 fabricated in submicron Silicon Gate CMOS technology for lower R DS(on) resistance and improved linearity with low current. This device may be operated either with a single supply or dual supply up to ±3. to pass a 6. PP signal without coupling capacitors. When operating in single supply mode, it is only necessary to tie EE, pin 7 to ground. For dual supply operation, EE is tied to a negative voltage, not to exceed maximum ratings. Features Improved R DS(on) Specifications Pin for Pin Replacement for MAX4 and MAX4A One Half the Resistance Operating at. Single or Dual Supply Operation Single 2.. Operation, or Dual ±3. Operation With of 3. to 3.3, Device Can Interface with.8 Logic, No Translators Needed Address and Inhibit Logic are Overoltage Tolerant and May Be Driven Up +6. Regardless of Improved Linearity Over Standard HC4 Devices Popular SOIC, and Space Saving TSSOP, and QSOP Pin Packages PbFree Packages are Available* SOIC D SUFFIX CASE 7B TSSOP DT SUFFIX CASE 948F QSOP QS SUFFIX CASE 492 A = Assembly Location WL, L = Wafer Lot Y = Year WW, W = Work Week G or = PbFree Package MARKING DIAGRAMS NLAS4G AWLYWW NLAS 4 ALYW S4 ALYW NO 2 NO 4 NO NO 6 ADD C ADD B ADD A NO NO 3 COM NO 7 NO Inhibit EE Figure. Pin Connection (Top iew) 8 ORDERING INFORMATION Device Package Shipping NLAS4DR2 SOIC /Tape & Reel NLAS4DR2G SOIC (PbFree) /Tape & Reel NLAS4DTR2 TSSOP /Tape & Reel NLAS4DTR2G TSSOP (PbFree) /Tape & Reel NLAS4QSR QSOP /Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 26 May, 26 Rev. 3 Publication Order Number: NLAS4/D
2 NLAS4 TRUTH TABLE Inhibit X don t care Address C B A X don t care X don t care ON SWITCHES* All switches open COMNO COMNO COMNO 2 COMNO 3 COMNO 4 COM NO NO NO 2 NO 3 NO 4 NO NO 6 COMNO COMNO 6 COMNO 7 *NO and COM pins are identical and interchangeable. Either may be considered an input or output; signals pass equally well in either direction. ADD C ADD B ADD A LOGIC NO 7 Figure 2. Logic Diagram Inhibit ÎÎ MAXIMUM RATINGS Parameter SymbolÎÎÎÎÎÎÎ alue ÎÎ Unit Negative DC Supply oltage (Referenced to ) EE ÎÎÎÎÎÎÎ 7. to. ÎÎ Positive DC Supply oltage (Note ) (Referenced to ) ÎÎÎÎÎÎÎ. to 7. ÎÎ (Referenced to EE ). to 7. ÎÎÎÎÎÎÎ ÎÎ Analog oltage IS EE. to. Digital oltage (Referenced to ) IN. to 7. DC Current, Into or Out of Any Pin I ma Storage Temperature Range 6 to T STG C Lead Temperature, mm from Case for Seconds T L ÎÎÎÎÎÎÎ 26 ÎÎ C Junction Temperature under Bias T J ÎÎÎÎÎÎÎ ÎÎ C Thermal Resistance SOIC JA ÎÎÎÎÎÎÎ 43 ÎÎ TSSOP ÎÎÎÎÎÎÎ 4 ÎÎ C/W QSOP 4 Power Dissipation in Still Air, SOIC P D TSSOP ÎÎÎÎÎÎÎ 4 ÎÎ mw QSOP 4 Moisture Sensitivity MSL Level Flammability Rating Oxygen Index: 3% 3% F R UL in ESD Withstand oltage Human Body Model (Note 2) ESD 2 Machine Model (Note 3) ÎÎÎÎÎÎÎ 2 ÎÎ Charged Device Model (Note 4) Latchup Performance Above and Below at C (Note ) I LATCHUP ÎÎÎÎÎÎÎ 3 ÎÎ ma Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. The absolute value of EE Tested to EIA/JESD22A4A. 3. Tested to EIA/JESD22AA. 4. Tested to JESD22CA.. Tested to EIA/JESD78. 2
3 NLAS4 RECOMMENDED OPERATING CONDITIONS Parameter ÎÎÎÎÎ Symbol Min Max Unit.ÎÎÎ Î Negative DC Supply oltage (Referenced to ) EE ÎÎÎ ÎÎ Î Positive DC Supply oltage (Referenced to ) ÎÎÎ 2. ÎÎÎ. ÎÎ (Referenced to EE ) Î ÎÎÎ ÎÎÎÎÎ Analog oltage IS EE Î ÎÎÎ ÎÎÎÎÎ Digital oltage (Note 6) (Referenced to ) IN. Î ÎÎÎ ÎÎÎÎÎ Operating Temperature Range, All Package Types T A C Î ÎÎÎ ÎÎÎÎÎ Rise/Fall Time Î CC = 3..3 t r, t f ÎÎÎ ÎÎÎ ÎÎ ns/ (Channel Select or Enable s) =.. 6. Unused digital inputs may not be left open. All digital inputs must be tied to a highlogic voltage level or a lowlogic input voltage level. 2 DC CHARACTERISTICS Digital Section (oltages Referenced to ) Parameter Minimum HighLevel oltage, Address and Inhibit s Maximum LowLevel oltage, Address and Inhibit s Maximum Leakage Current, Address or Inhibit s Condition Guaranteed Limit Symbol to C 8 C C IH IL IN = 6. or I IN to A Unit Maximum Quiescent Supply Current (per Package) Address, Inhibit and IS = or I CC A DC ELECTRICAL CHARACTERISTICS Analog Section SymbolÎÎÎ ÎÎÎ ÎÎ Parameter Test Conditions ÎÎÎÎÎÎ ÎÎ Guaranteed Limit ÎÎ EE ÎÎÎÎÎ to CÎÎÎ 8 CÎÎÎÎ C ÎÎ Unit Maximum ON Resistance IN = IL or IH R ON ÎÎÎ 3. ÎÎ ÎÎÎÎÎ 86 ÎÎÎ 8ÎÎÎÎ 2 ÎÎ (Note 7) IS = ( EE to ) I S = ma ÎÎÎ 3. ÎÎ 3. ÎÎÎÎÎ 26 ÎÎÎ 33 ÎÎÎÎ 37 ÎÎ (Figures 4 thru 9) ÎÎÎÎÎ Maximum Difference in ON Resistance Between Any Two IN = IL or IH, IS = 2. R ON IS = ½ ( EE ), IS = 3. ÎÎÎ ÎÎ ÎÎÎÎÎ 3 ÎÎÎ 8 ÎÎÎÎ 8 ÎÎ Channels in the Same Package I S = ma, IS = 2. ÎÎÎ 3. ÎÎ 3. ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ON Resistance Flatness Maximum OffChannel Leakage Current Maximum OnChannel Leakage Current, Channel tochannel I S = ma COM =, 2, 3. COM = 2,, 2 Switch Off IN = IL or IH IO =. or EE +. (Figure 7) Switch On IO =. or EE +. (Figure 7) Rflat(ON) I NC(OFF) 6. I NO(OFF) 3. I COM(ON) At supply voltage ( ) approaching 2. the analog switch onresistance becomes extremely nonlinear. Therefore, for low voltage operation it is recommended that these devices only be used to control digital signals na na 3
4 NLAS4 AC CHARACTERISTICS ( t r = t f = 3 ns) ÎÎ Guaranteed Limit ÎÎ Î Parameter Test Conditions ÎÎÎÎ Symbol ÎÎ ÎÎÎ to C ÎÎÎÎÎÎÎ EE ÎÎÎ Min ÎÎÎ Typ* ÎÎÎ 8 CÎÎÎÎ C ÎÎ Unit Minimum BreakBefore Make Time *Typical Characteristics are at C. IN = IL or IH IS = R L = 3 C L = 3 pf (Figure 9) AC CHARACTERISTICS (C L = 3 pf, t r = t f = 3 ns) t BBM ns Parameter Transition Time (Address Selection Time) (Figure 8) Turnon Time (Figures 4,, 2, and 2) Inhibit to N O or N C Turnoff Time (Figures 4,, 2, and 2) Inhibit to N O or N C Guaranteed Limit to C 8 C C EE Symbol Min Typ Max Min Max Min Max t TRANS t ON t OFF Unit ns ns ns C, =. Maximum Capacitance, Select s C IN 8 pf Analog I/O C NO or C NC Common I/O C COM Feedthrough C (ON). ADDITIONAL APPLICATION CHARACTERISTICS ( = ) Parameter Maximum OnChannel Bandwidth or Minimum Frequency Response Condition IS = ½ ( EE ) Source Amplitude = dbm (Figures and 22) OffChannel Feedthrough Isolation f = khz; IS = ½ ( EE ) Source = dbm (Figures 2 and 22) Maximum Feedthrough On Loss IS = ½ ( EE ) Source = dbm (Figures and 22) Charge Injection Total Harmonic Distortion THD + Noise IN = to EE, f IS = khz, t r = t f = 3 ns R IS =, C L = pf, Q = C L * OUT (Figures and ) f IS = MHz, R L = K, C L = pf, IS =. PP sine wave IS = 6. PP sine wave (Figure 3) EE Typ Symbol C BW ISO ONL Q. 3. THD Unit MHz db db pc % 4
5 NLAS4 I CC (na).... = 3. = Temperature ( C) Figure 3. I CC versus Temp, = 3 and IS (DC) Figure 4. R ON versus, Temp = C C C 8 C C Com () Figure. Typical On Resistance = 2., EE = C 8 C C C Com () Figure 6. Typical On Resistance = 3., EE = 2 8 C C 2 8 C C C C C C Com () Figure 7. Typical On Resistance =, EE = Com () Figure 8. Typical On Resistance =., EE =
6 NLAS4 2 8 C C C C Com () Figure 9. Typical On Resistance = 3.3, EE = BANDWIDTH (db) BANDWIDTH (ONRESPONSE).. PHASE SHIFT 8%/DI (db) PHASE SHIFT.. FREQUENCY (mhz) FREQUENCY (mhz) Figure. Bandwidth, =. Figure. Phase Shift, =. OFF ISOLATION db/di DISTORTION (%) FREQUENCY (mhz) Figure 2. Off Isolation, =.. FREQUENCY (mhz) Figure 3. Total Harmonic Distortion 6
7 NLAS4 3 3 T A = C = 2 2 TIME (ns) t ON (ns) TIME (ns) t ON t OFF (ns) t OFF (OLTS) Figure 4. t ON and t OFF versus 4 8 Temperature ( C) Figure. t ON and t OFF versus Temp 3. Q (pc) = = 3 LEAKAGE (na).. I COM(ON) I COM(OFF) = COM (). I NO(OFF) TEMPERATURE ( C) Figure. Charge Injection versus COM oltage Figure 7. Switch Leakage versus Temperature. F EE 3 OUT 3 pf % % 9% Address Select Pin EE % t trans t trans Figure 8. Channel Selection Propagation Delay 7
8 NLAS4. F DUT 3 OUT 3 pf 9% t BMM 9% of OH Address Select Pin Figure 9. t BBM (Time BreakBeforeMake) DUT % %. F Open 3 OUT 3 pf OH 9% 9% Enable t ON t OFF Figure 2. t ON /t OFF DUT 3 % % Open 3 pf OUT CC Enable OL t OFF % t ON % Figure 2. t ON /t OFF 8
9 NLAS4 Reference Generator DUT Transmitted Channel switch Address and Inhibit/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. ISO, Bandwidth and ONL are independent of the input signal direction. ISO = Off Channel Isolation = 2 Log OUT for IN at khz IN ONL = On Channel Loss = 2 Log OUT for IN at khz to MHz IN Bandwidth (BW) = the frequency 3 db below ONL Figure 22. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/ ONL DUT Open IN C L IN Off On Off OUT Figure. Charge Injection: (Q) TYPICAL OPERATION EE 7 8 EE Figure 24.. olts Single Supply =., EE = Figure. Dual Supply = 3., EE = 3. 9
10 NLAS4 PACKAGE DIMENSIONS SOIC D SUFFIX CASE 7B ISSUE J A 9 8 B P 8 PL. (.) M B S NOTES:. DIMENSIONING AND TOLERANCING PER ANSI YM, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION. (.6) PER SIDE.. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. T SEATING PLANE G K C D PL. (.) M T B S A S M R X 4 J F MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G.27 BSC. BSC J K M 7 7 P R....9 TSSOP CASE 948F ISSUE A. (.6) T. (.6) T. (.4) T SEATING PLANE L U PIN IDENT. U D S S 2X L/2 C X K REF. (.4) M T U S S 9 8 A G B U H N J N J F DETAIL E DETAIL E K K ÇÇÇ ÉÉÉ SECTION NN. (.) M W NOTES:. DIMENSIONING AND TOLERANCING PER ANSI YM, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED. (.6) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED. (.) PER SIDE.. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.8 (.3) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE W. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C.2.47 D F G.6 BSC.26 BSC H J J K K L 6.4 BSC.2 BSC M 8 8
11 NLAS4 PACKAGE DIMENSIONS QSOP QS SUFFIX CASE 492 ISSUE O L B. (.) M T C A G R U K P Q H x 4 RAD..3 X. DP. MAX RAD... TYP DETAIL E MOLD PIN MARK N 8 PL NOTES:. DIMENSIONING AND TOLERANCING PER ANSI YM, CONTROLLING DIMENSION: INCH. 3. THE BOTTOM PACKAGE SHALL BE BIGGER THAN THE TOP PACKAGE BY 4 MILS (NOTE: LEAD SIDE ONLY). BOTTOM PACKAGE DIMENSION SHALL FOLLOW THE DIMENSION STATED IN THIS DRAWING. 4. PLASTIC DIMENSIONS DOES NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 6 MILS PER SIDE.. BOTTOM EJECTOR PIN WILL INCLUDE THE COUNTRY OF ORIGIN (COO) AND MOLD CAITY I.D. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G. BSC.64 BSC H J K.4... L M 8 8 N 7 7 P Q.2 DIA. DIA R U D PL. (.) M T B S A S T SEATING PLANE M J F DETAIL E ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 3, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: 8298 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NLAS4/D
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Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) High oltage Power Transistors for Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications
MJD9, NJVMJD9T4G (PNP) MJD3, NJVMJD3T4G (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed
SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY
Retriggerable Monostable Multivibrators These dc triggered multivibrators feature pulse width control by three methods. The basic pulse width is programmed by selection of external resistance and capacitance
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
NL3HS2222. High-Speed USB 2.0 (480 Mbps) DPDT Switches
High-Speed USB 2.0 (480 Mbps) DPDT Switches The NL3HS2222 is a DPDT switch optimized for highspeed USB 2.0 applications within portable systems. It features ultralow on capacitance, C ON = 7.5 pf (typ),
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
LM339, LM239, LM2901, LM2901V, NCV2901, MC3302. Single Supply Quad Comparators
LM339, LM239, LM290, LM290V, NCV290, MC3302 Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer, automotive,
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
74HCT157. Quad 2 Input Data Selectors / Multiplexers. High Performance Silicon Gate CMOS
74HCT57 Quad 2 Input Data Selectors / Multiplexers High Performance Silicon Gate CMOS The 74HCT57 is identical in pinout to the S57. The device inputs are compatible with standard CMOS outputs; with pullup
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
MC74HCT4066A. Quad Analog Switch/ Multiplexer/Demultiplexer with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS
MC4HCT4066A Quad Analog Switch/ Multiplexer/Demultiplexer with LSTTL Compatible Inputs High Performance Silicon Gate CMOS The MC4HCT4066A utilizes silicon gate CMOS technology to achieve fast propagation
NL27WZ17. Dual Non-Inverting Schmitt Trigger Buffer
Dual Non-Inverting Schmitt Trigger Buffer The N7WZ7 is a high performance dual buffer operating from a to supply. At =, high impedance TT compatible inputs significantly reduce current loading to input
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
NL27WZ07. Dual Buffer with Open Drain Outputs
Dual Buffer with Open Drain Outputs The N27WZ07 is a high performance dual buffer with open drain outputs operating from a.5 to 5.5 V supply. The internal circuit is composed of multiple stages, including
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
NSS12100M3T5G. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 350 m
NSSMTG, A, Low CE(sat) PNP Transistor ON Semiconductor's e PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current
MC74LVXT4066. Quad Analog Switch/ Multiplexer/Demultiplexer. High Performance Silicon Gate CMOS
MC4LVXT466 Quad Analog Switch/ Multiplexer/Demultiplexer High Performance Silicon Gate CMOS The MC4LVXT466 utilizes silicon gate CMOS technology to achieve fast propagation delays, low resistances, and
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
NB2879A. Low Power, Reduced EMI Clock Synthesizer
Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic
This document, MC74HC4066/D has been canceled and replaced by MC74HC4066A/D LAN was sent 9/28/01
http://onsemi.com This document, MC74HC4066/D has been canceled and replaced by MC74HC4066A/D LAN was sent 9/28/01 High Performance Silicon Gate CMOS The MC54/74HC4066 utilizes silicon gate CMOS technology
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction
MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
PCS2P2309/D. 3.3V 1:9 Clock Buffer. Functional Description. Features. Block Diagram
3.3V 1:9 Clock Buffer Features One-Input to Nine-Output Buffer/Driver Buffers all frequencies from DC to 133.33MHz Low power consumption for mobile applications Less than 32mA at 66.6MHz with unloaded
NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package
NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
BC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)