NLAS3699B. Dual DPDT Ultra Low R ON Switch

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1 Dual DPDT Ultra Low R ON Switch The NLAS3699B is a dual independent ultra low R ON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699B can handle a balanced microphone/speaker/ring tone generator in a monophone mode. The device contains a break before make feature. Features Single Supply Operation 1.65 to 4.5 V Function Directly from LiON Battery Maximum Breakdown Voltage: 5.5 V Tiny 3 x 3 mm QFN Pb Free Package Meet JEDEC MO 22 Specifications Low Static Power This is a Pb Free Device* Typical Applications Cell Phone Speaker/Microphone Switching Ringtone Chip/Amplifier Switching Four Unbalanced (Single Ended) Switches Stereo Balanced (Push Pull) Switching 1 QFN 16 CASE 485AE MARKING DIAGRAMS 16 ÇÇ 1 NLAB 3699 ALYW A = Assembly Location L = Wafer Lot Y = Year W = Work Week = Pb Free Package (Note: Microdot may be in either location) D1 1S1 Vcc 4S Important Information ESD Protection: HBM (Human Body Model) > 8 V MM (Machine Model) > 4 V Continuous Current Rating Through each Switch ±3 ma Conforms to: JEDEC MO 22, Issue H, Variation VEED 6 Pin for Pin Compatible with STG3699 1S2 1 2IN 2S1 D D4 4S1 3 4IN 3S2 2S2 GND 3S1 D3 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 26 March, 26 Rev. 1 Publication Order Number: NLAS3699B/D

2 D S2 S1 IN Figure 1. Equivalent Circuit PIN DESCRIPTION QFN PIN # Symbol Name and Function 1, 3, 5, 7, 9, 11, 13, 15 1S1 to 4S1, 1S2 to 4S2 Independent Channels 2, 1 1 2IN, 3 4IN Controls 4, 8, 12, 16 D1 to D4 Common Channels 6 GND Ground (V) 14 Positive Supply Voltage TRUTH TABLE *High impedance. IN S1 S2 H ON OFF(*) L OFF(*) ON 2

3 MAXIMUM RATINGS Symbol Parameter Value Unit Positive DC Supply Voltage.5 to 5.5 V V IS Analog Voltage (V NO, V NC, or V COM ).5 V IS V V IN Digital Select Voltage.5 V I 5.5 V I anl1 Continuous DC Current from COM to NC/NO 3 ma I anl pk 1 Peak Current from COM to NC/NO, 1 duty cycle (Note 1) 5 ma I clmp Continuous DC Current into COM/NO/NC with respect to or GND 1 ma t r, t f Rise or Fall Time, SELECT = 1.6 V 2.7 V = 3. V 4.5 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Defined as 1% ON, 9% off duty cycle. 2 1 ns/v RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit DC Supply Voltage V V IN Digital Select Voltage GND V V IS Analog Voltage (NC, NO, COM) GND V T A Operating Temperature Range 4 85 C t r, t f Rise or Fall Time, SELECT = 1.6 V 2.7 V = 3. V 4.5 V 2 1 ns/v 3

4 DC CHARACTERISTICS Digital Section (Voltages Referenced to GND) Symbol Parameter Condition V IH Minimum High Level Voltage, Select s Guaranteed Limit 4 C to 25 C C Unit V V IL Maximum Low Level Voltage, Select s V I IN Maximum Leakage Current, Select s V IN = or GND A I OFF Power Off Leakage Current V IN = or GND.5 2. A I CC Maximum Quiescent Supply Current (Note 2) Select and V IS = or GND 1.65 to A DC ELECTRICAL CHARACTERISTICS Analog Section Symbol Parameter Condition R ON R FLAT R ON NC/NO On Resistance (Note 2) NC/NO On Resistance Flatness (Notes 2, 4) On Resistance Match Between Channels (Notes 2 and 3) V IN V IL or V IN V IH V IS = GND to I IN I 1 ma I COM = 1 ma 2.5 V IS = to V IS = 1.3 V; I COM = 1 ma V IS = 1.5 V; I COM = 1 ma V IS = 2.2 V; I COM = 1 ma Guaranteed Maximum Limit 4 C to 25 C 85 C Min Max Min Max Unit I NC(OFF) NC or NO Off Leakage Current (Note 2) V IN = V IL or V IH I NO(OFF) V NO or V NC =.3 V V COM = 4. V na I COM(ON) COM ON Leakage Current (Note 2) V IN = V IL or V IH V NO.3 V or 4. V with V NC floating or V NC.3 V or 4. V with V NO floating V COM =.3 V or 4. V na 2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. 3. R ON = R ON(MAX) R ON(MIN) between ns1 or ns2. 4. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal ranges. 4

5 AC ELECTRICAL CHARACTERISTICS ( t r = t f = 3. ns) Symbol Parameter Test Conditions t ON Turn On Time R L = 5 C L = 35 pf (Figures 3 and 4) t OFF Turn Off Time R L = 5 C L = 35 pf (Figures 3 and 4) (V) V IS (V) Guaranteed Maximum Limit 4 C to 25 C 85 C Min Typ* Max Min Max Unit ns ns t BBM Minimum Break Before Make Time V IS = 3. R L = 5 C L = 35 pf (Figure 2) ns 25, = 4.5 V C IN Control Pin Capacitance 7. pf C SN SN Port Capacitance 72 pf C D D Port Capacitance When Switch is Enabled 23 pf *Typical Characteristics are at 25 C. ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol Parameter Condition BW Maximum On Channel 3dB Bandwidth or Minimum Frequency Response (Figure 12) V IN centered between and GND (Figure 5) V ONL Maximum Feed through On Loss V IN = 1 khz to 5 MHz V IN centered between and GND (Figure 5) V ISO Off Channel Isolation (Figure 13) f = 1 khz; V IS = 1 V RMS; C L = 5 pf V IN centered between and GND(Figure 5) Q Charge Injection Select to Common I/O (Figure 8) THD Total Harmonic Distortion THD + Noise (Figure 7) V IN = to GND, R IS =, C L = 1 nf Q = C L x V OUT (Figure 6) (V) 25 C Typical Unit MHz db db pc F IS = 2 Hz to 2 khz, R L = R gen = 6, C L = 5 pf % V IS = 2 V PP VCT Channel to Channel Crosstalk f = 1 khz; V IS = 1 V RMS, C L = 5 pf, R L = 5 V IN centered between and GND (Figure 5) 5. Off Channel Isolation = 2log1 (Vcom/Vno), Vcom = output, Vno = input to off switch db 5

6 .1 F DUT V OUT 5 35 pf GND 9% t BMM 9% of V OH Switch Select Pin GND Figure 2. t BBM (Time Break Before Make) DUT V 5% 5%.1 F Open V OUT 5 35 pf V OH 9% 9% V OL t ON t OFF Figure 3. t ON /t OFF DUT 5 V 5% 5% Open V OUT 35 pf VOH V OL 1% 1% t OFF t ON Figure 4. t ON /t OFF 6

7 Reference DUT 5 5 Generator Transmitted 5 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. V ISO, Bandwidth and V ONL are independent of the input signal direction. V ISO = Off Channel Isolation = 2 Log V OUT for V IN at 1 khz VIN V ONL = On Channel Loss = 2 Log V OUT for V IN at 1 khz to 5 MHz VIN Bandwidth (BW) = the frequency 3 db below V ONL V CT = Use V ISO setup and test to all other switch analog input/outputs terminated with 5 Figure 5. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/V ONL DUT Open V IN GND C L V IN Off On Off V OUT Figure 6. Charge Injection: (Q) 1 5 THD (%) V CHARGE INJECTION Q (pc) V 2.5 V 3. V FREQUENCY (Hz) Figure 7. Total Harmonic Distortion Plus Noise Versus Frequency V IN (V) Figure 8. Charge Injection versus V is 7

8 V R ON ( ) V 3. V 3.6 V.4 4 C R ON ( ).8 85 C 25 C V COM (V) V IN (V) Figure 9. On Resistance vs. COM Voltage Figure 1. R ON vs. V IN vs. = 3. V R ON ( ) C 85 C V IN (V) 25 C Figure 11. R ON vs. V IN vs. = 3.6 V P OUT (db) FREQUENCY (MHz) Figure 12. Bandwidth vs. = 1.65 V to 3.6 V 4 P OUT (db) PHASE (deg) FREQUENCY (MHz) FREQUENCY (MHz) Figure 13. Off Isolation vs. = 1.65 V to 3.6 V Figure 14. Phase Angle vs. = 1.65 V to 3.6 V 8

9 DEVICE ORDERING INFORMATION Device Order Number Circuit Indicator Technology Device Nomenclature Device Function Package Suffix Tape & Reel Suffix NLAS3699BMN1R2G NL AS 3699B MN1 R2G QFN (Pb Free) Package Type Tape & Reel Size 3 Unit / Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 9

10 PACKAGE DIMENSIONS QFN 16 (3 x 3 x.85 mm) CASE 485AE 1 ISSUE O PIN 1 LOCATION ÇÇ D A B E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN.25 AND.3 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. OUTLINE MEETS JEDEC DIMENSIONS PER MO 22, VARIATION VEED X.15 C.1 C.8 C.15 C TOP VIEW SIDE VIEW (A3) A1 A C SEATING PLANE MILLIMETERS DIM MIN NOM MAX A A A3.2 REF b D 3. BSC D E 3. BSC E e.5 BSC K.2 L D2 16X L NOTE e EXPOSED PAD X K E C.5 C 16X b A B NOTE BOTTOM VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Kamimeguro, Meguro ku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NLAS3699B/D

NLAS4783B. Triple SPDT 1.0 R ON Switch

NLAS4783B. Triple SPDT 1.0 R ON Switch Triple SPDT 1.0 R ON Switch The NLAS4783B is a triple independent low R ON SPDT analog switch with ENABLE. This device is designed for low operating voltage, high current switching of speaker output for