NLAST4051. Analog Multiplexer/ Demultiplexer. TTL Compatible, Single Pole, 8 Position Plus Common Off
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1 NLAST45 Analog Multiplexer/ Demultiplexer TTL Compatible, Single Pole, 8 Position Plus Common Off The NLAST45 is an improved version of the MC45 and MC74HC45 fabricated in sub micron Silicon Gate CMOS technology for lower R DS(on) resistance and improved linearity with low current. This device may be operated either with a single supply or dual supply up to ±3 to pass a 6 PP signal without coupling capacitors. When operating in single supply mode, it is only necessary to tie EE, pin 7 to ground. For dual supply operation, EE is tied to a negative voltage, not to exceed maximum ratings. Translation is provided in the device, the Address and Inhibit are standard TTL level compatible. For CMOS compatibility see NLAS45. Pin for pin compatible with all industry standard versions of 45. Features Improved R DS(on) Specifications Pin for Pin Replacement for MAX45 and MAX45A One Half the Resistance Operating at 5. Single or Dual Supply Operation Single Operation, or Dual ±3 Operation With of 3. to 3.3, Device Can Interface with.8 Logic, No Translators Needed Address and Inhibit Logic are Over oltage Tolerant and May Be Driven Up +6 Regardless of Address and Inhibit Pins Standard TTL Compatible Greatly Improved Noise Margin Over MAX45 and MAX45A True TTL Compatibility IL =.8, IH = 2. Improved Linearity Over Standard HC45 Devices Popular SOIC, and Space Saving TSSOP, and QSOP 6 Pin Packages Pb Free Packages are Available* NO 2 NO 4 NO NO 6 ADD C ADD B ADD A SOIC 6 D SUFFIX CASE 75B TSSOP 6 DT SUFFIX CASE 948F QSOP 6 QS SUFFIX CASE 492 MARKING DIAGRAMS A = Assembly Location WL, L = Wafer Lot Y = Year WW, W = Work Week = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. 6 6 NLAST45 AWLYWW AST 45 ALYW NLAST 45 ALYW NO NO 3 COM NO 7 NO 5 Inhibit EE GND Figure. Pin Connection (Top iew) *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 8 Semiconductor Components Industries, LLC, 26 April, 26 Rev. 4 Publication Order Number: NLAST45/D
2 NLAST45 TRUTH TABLE Inhibit Address ON SWITCHES* NO X don t care C B A X don t care X don t care All switches open NO NO 2 COM NO COM NO COM NO 3 COM NO 2 NO 4 COM NO 3 NO 5 COM NO 4 COM NO 5 NO 6 COM NO 6 NO 7 COM NO 7 *NO and COM pins are identical and interchangeable. Either may be considered an input or output; signals pass equally well in either direction. ADD C ADD B ADD A LOGIC Inhibit Figure 2. Logic Diagram ÎÎÎ MAXIMUM RATINGS ÎÎÎ Symbol Parameter alue Unit EE Î ÎÎ ÎÎÎ Negative DC Supply oltage (Referenced to GND) 7. to.5 Î Positive DC Supply oltage (Note ) (Referenced to GND) ÎÎ.5 to 7. ÎÎÎ (Referenced to EE ) ÎÎ.5 to 7. ÎÎÎ IS Î Analog oltage ÎÎ EE.5 to.5 ÎÎÎ IN Î Digital oltage (Referenced to GND) ÎÎ.5 to 7. ÎÎÎ I Î DC Current, Into or Out of Any Pin ÎÎ 5 ÎÎÎ ma T STG Storage Temperature Range 65 to 5 ÎÎÎÎ C T L Lead Temperature, mm from Case for Seconds 26 C ÎÎÎ T J Junction Temperature under Bias 5 C ÎÎÎ JA Thermal Resistance SOIC 43 C/W Î TSSOPÎÎ 64 ÎÎÎ QSOPÎÎ 64 ÎÎÎ P D Î Power Dissipation in Still Air SOICÎÎ 5 ÎÎÎ mw TSSOP 45 QSOPÎÎ 45 ÎÎÎ MSL Î Moisture Sensitivity ÎÎ Level ÎÎÎ F R Î Flammability Rating Oxygen Index: 3% 35% ÎÎ UL in ÎÎÎ ESD Î ESD Withstand oltage Human Body Model (Note 2) ÎÎ 2 ÎÎÎ Machine Model (Note 3) 2 Charged Device Model (Note 4) ÎÎ ÎÎÎ I LATCHUP Î Latchup Performance Above and Below GND at C (Note 5)ÎÎ 3 ÎÎÎ ma Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. The absolute value of EE Tested to EIA/JESD22 A4 A. 3. Tested to EIA/JESD22 A5 A. 4. Tested to JESD22 C A. 5. Tested to EIA/JESD78. 2
3 NLAST45 RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit EE ÎÎ Negative DC Supply oltage (Referenced to GND) 5.5ÎÎÎÎ GND ÎÎÎ ÎÎ Positive DC Supply oltage (Referenced to GND) ÎÎÎ 2.5 ÎÎÎÎ 5.5 ÎÎÎ (Referenced to EE ) ÎÎÎ IS Analog oltage EE Î ÎÎ ÎÎÎ IN Digital oltage (Note 6) (Referenced to GND) 5.5 ÎÎÎ T A Operating Temperature Range, All Package Types 55 ÎÎÎÎ ÎÎÎ C t r, t f ÎÎ Rise/Fall Time ÎÎÎ = 3..3 Î (Channel Select or Enable s) = 5..5 ÎÎÎ ÎÎÎÎ 2 ÎÎÎ ns/ 6. Unused digital inputs may not be left open. All digital inputs must be tied to a high logic voltage level or a low logic input voltage level. DC CHARACTERISTICS Digital Section (oltages Referenced to GND) Symbol Parameter Condition IH IL I IN I CC Minimum High Level oltage, Address or Inhibit s Maximum Low Level oltage, Address or Inhibit s Maximum Leakage Current, Address or Inhibit s Maximum Quiescent Supply Current (per Package) Guaranteed Limit 55 to C 85 C C IN = 6. or GND to A Address or Inhibit and IS = or GND Unit A DC ELECTRICAL CHARACTERISTICS Analog Section ÎÎ Î ÎÎÎÎ Symbol ÎÎÎÎ Parameter ÎÎÎÎ Test Conditions ÎÎÎ ÎÎ Guaranteed Limit ÎÎ EE 55 to C ÎÎÎ 85 C ÎÎÎÎ C ÎÎ Unit ÎÎÎÎ R ON ÎÎÎÎ ÎÎÎÎ Maximum ON Resistance ÎÎÎÎ IN = IL or IH IS = ( EE to ÎÎÎ 3. ÎÎ 86 ÎÎÎ 8ÎÎÎÎ 2 ÎÎ ) ÎÎÎÎ ÎÎÎÎ I S = ma ÎÎÎ 3. ÎÎ ÎÎÎ 33 ÎÎÎÎ 37 ÎÎ (Figures 4 thru 9) ÎÎÎ R ÎÎÎÎ ON Maximum Difference in ON ÎÎÎÎ Resistance Between Any Two ÎÎÎÎ IN = IL or IH, IS = IS = 3. ÎÎÎ ÎÎ 3 ÎÎÎ 8 ÎÎÎÎ 8 ÎÎ Channels in the Same Pack- I S = ma, IS = 2. ÎÎÎ 3. ÎÎ 3. ÎÎÎ 5 ÎÎÎÎ 5 ÎÎ age Rflat (ON) ON Resistance Flatness COM =, 2, 3.5 COM = 2,, 2 I NC(OFF) I NO(OFF) I COM(ON) Maximum Off Channel Leakage Current Maximum On Channel Leakage Current, Channel to Channel Switch Off IN = IL or IH IO =. or EE +. (Figure 7) Switch On IO =. or EE +. (Figure 7) na na 3
4 NLAST45 AC CHARACTERISTICS ( t r = t f = 3 ns) ÎÎ Guaranteed Limit ÎÎ ÎÎ ÎÎÎÎ Symbol Parameter ÎÎÎ Test Conditions ÎÎÎ CC ÎÎ 55 to CÎÎ EE ÎÎÎ MinÎÎÎ Typ* ÎÎÎ 85 CÎÎÎÎ C ÎÎ Unit t BBM Minimum Break Before Make Time IN = IL or IH IS = R L = 3 C L = 35 pf (Figure 9) *Typical Characteristics are at C. AC CHARACTERISTICS (C L = 35 pf, t r = t f = 3 ns) Guaranteed Limit ns Symbol Parameter EE 55 to C 85 C C Min Typ Max Min Max Min Max Unit t TRANS Transition Time (Address Selection Time) (Figure 8) ns t ON Turn on Time (Figures 4, 5, 2, and 2) Enable to N O or N C ns t OFF Turn off Time (Figures 4, 5, 2, and 2) Enable to N O or N C ns C, = 5. C IN Maximum Capacitance,Select s 8 pf C NO or C NC Analog I/O C COM Common I/O C (ON) Feedthrough. ADDITIONAL APPLICATION CHARACTERISTICS (GND = ) Symbol Parameter Condition EE Typ C Unit BW Maximum On Channel Bandwidth or Minimum Frequency Response IS = ½ ( EE ) Source Amplitude = dbm (Figures and 22) MHz ISO Off Channel Feedthrough Isolation f = khz; IS = ½ ( EE ) Source = dbm (Figures 2 and 22) db ONL Maximum Feedthrough On Loss IS = ½ ( EE ) Source = dbm (Figures and 22) db Q Charge Injection IN = to EE, f IS = khz, t r = t f = 3 ns R IS =, C L = pf, Q = C L * OUT (Figures 6 and 23) pc THD Total Harmonic Distortion THD + Noise f IS = MHz, R L = K, C L = 5 pf, IS = 5. PP sine wave IS = 6. PP sine wave (Figure 3) % 4
5 NLAST I CC (na).... = 3. = 5. R ON ( ) Temperature ( C) Figure 3. I CC versus Temp, = 3 and IS (DC) Figure 4. R ON versus, Temp = C R ON ( ) C C 85 C 55 C Com () Figure 5. Typical On Resistance = 2., EE = R ON ( ) C 85 C C 55 C Com () Figure 6. Typical On Resistance = 3., EE = 2 85 C C 2 85 C C R ON ( ) 5 C 55 C R ON ( ) 5 55 C C Com () Figure 7. Typical On Resistance =, EE = Com () Figure 8. Typical On Resistance = 5.5, EE = 5
6 NLAST C C R ON ( ) 5 C 55 C Com () Figure 9. Typical On Resistance = 3.3, EE = BANDWIDTH (db) BANDWIDTH (ON RESPONSE).. PHASE SHIFT 8%/DI (db) PHASE SHIFT.. FREQUENCY (mhz) FREQUENCY (mhz) Figure. Bandwidth Figure. Phase Shift OFF ISOLATION db/di DISTORTION (%) FREQUENCY (mhz) Figure 2. Off Isolation. FREQUENCY (mhz) Figure 3. Total Harmonic Distortion 6
7 NLAST T A = C = 2 2 TIME (ns) 5 t ON (ns) TIME (ns) 5 t ON 5 t OFF (ns) 5 t OFF (OLTS) Figure 4. t ON and t OFF versus Temperature ( C) Figure 5. t ON and t OFF versus Temp 3. Q (pc) = 5 = 3 LEAKAGE (na).. I COM(ON) I COM(OFF) = COM (). 55 I NO(OFF) TEMPERATURE ( C) Figure 6. Charge Injection versus COM oltage Figure 7. Switch Leakage versus Temperature 7
8 NLAST45. F EE 3 OUT 35 pf 5% 5% 9% Address Select Pin EE % t trans t trans Figure 8. Channel Selection Propagation Delay. F DUT 3 OUT 35 pf GND 9% t BMM 9% of OH Address Select Pin GND Figure 9. t BBM (Time Break Before Make) DUT 5% 5%. F Open 3 OUT 35 pf OH 9% 9% Enable GND t ON t OFF Figure 2. t ON /t OFF 8
9 NLAST45 DUT 3 5% 5% Open 35 pf OUT CC Enable OL t OFF % t ON % Figure 2. t ON /t OFF Reference DUT 5 5 Generator Transmitted 5 Channel switch Address and Inhibit/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. ISO, Bandwidth and ONL are independent of the input signal direction. ISO = Off Channel Isolation = 2 Log OUT IN for IN at khz ONL = On Channel Loss = 2 Log OUT IN Bandwidth (BW) = the frequency 3 db below ONL for IN at khz to 5 MHz Figure 22. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/ ONL 9
10 NLAST45 DUT Open IN GND C L IN Off On Off OUT Figure 23. Charge Injection: (Q) TYPICAL OPERATION EE GND 7 8 EE GND Figure olts Single Supply = 5., EE = Figure. Dual Supply = 3., EE = 3. ORDERING INFORMATION Device Package Shipping NLAST45DR2 SOIC 6 48 Units / Rail NLAST45DT TSSOP 6* 96 Units / Rail NLAST45DTR2 TSSOP 6* Tape & Reel NLAST45DTR2G TSSOP 6* Tape & Reel NLAST45QSR SOEIAJ 6 2 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *This package is inherently Pb Free.
11 NLAST45 PACKAGE DIMENSIONS SOIC 6 D SUFFIX CASE 75B 5 ISSUE J A B P 8 PL. (.) M B S NOTES:. DIMENSIONING AND TOLERANCING PER ANSI YM, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.5 (.6) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. T SEATING PLANE G K C D 6 PL. (.) M T B S A S M R X 45 J F MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G.27 BSC.5 BSC J K M 7 7 P R TSSOP 6 DT SUFFIX CASE 948F ISSUE A.5 (.6) T.5 (.6) T. (.4) T SEATING PLANE L U PIN IDENT. U D S S 2X L/2 C 6X K REF. (.4) M T U S S A G B U N H N J J F DETAIL E DETAIL E K K ÇÇÇ ÉÉ SECTION N N. (.) M W NOTES:. DIMENSIONING AND TOLERANCING PER ANSI YM, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED.5 (.6) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED. (.) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.8 (.3) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE W. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C.2.47 D F G.65 BSC.26 BSC H J J K K L 6.4 BSC.2 BSC M 8 8
12 NLAST45 PACKAGE DIMENSIONS QSOP 6 QS SUFFIX CASE 492 ISSUE O L B. (.) M T C A G R U K P Q H x 45 RAD..3 X.5 DP. MAX RAD..5. TYP DETAIL E MOLD PIN MARK N 8 PL NOTES:. DIMENSIONING AND TOLERANCING PER ANSI YM, CONTROLLING DIMENSION: INCH. 3. THE BOTTOM PACKAGE SHALL BE BIGGER THAN THE TOP PACKAGE BY 4 MILS (NOTE: LEAD SIDE ONLY). BOTTOM PACKAGE DIMENSION SHALL FOLLOW THE DIMENSION STATED IN THIS DRAWING. 4. PLASTIC DIMENSIONS DOES NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 6 MILS PER SIDE. 5. BOTTOM EJECTOR PIN WILL INCLUDE THE COUNTRY OF ORIGIN (COO) AND MOLD CAITY I.D. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G. BSC.64 BSC H J K.4... L M 8 8 N 7 7 P Q.2 DIA.5 DIA R U D 6 PL. (.) M T B S A S T SEATING PLANE M J F DETAIL E ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 632, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2 9 Kamimeguro, Meguro ku, Tokyo, Japan 53 5 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NLAST45/D
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Dual Operational Amplifier and Dual Comparator The MC05 contains two differential-input operational amplifiers and two comparators, each set capable of single supply operation. This operational amplifier-comparator
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
High Performance Silicon Gate CMOS
High Performance Silicon Gate CMOS The MC74HC4316A utilizes silicon gate CMOS technology to achieve fast propagation delays, low ON resistances, and low OFF channel leakage current. This bilateral switch/multiplexer/
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
MMSZ2V4T1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZVT Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3
4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
This document, MC74HC4066/D has been canceled and replaced by MC74HC4066A/D LAN was sent 9/28/01
http://onsemi.com This document, MC74HC4066/D has been canceled and replaced by MC74HC4066A/D LAN was sent 9/28/01 High Performance Silicon Gate CMOS The MC54/74HC4066 utilizes silicon gate CMOS technology
MC74LVXT4066. Quad Analog Switch/ Multiplexer/Demultiplexer. High Performance Silicon Gate CMOS
MC4LVXT466 Quad Analog Switch/ Multiplexer/Demultiplexer High Performance Silicon Gate CMOS The MC4LVXT466 utilizes silicon gate CMOS technology to achieve fast propagation delays, low resistances, and
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NL27WZ07. Dual Buffer with Open Drain Outputs
Dual Buffer with Open Drain Outputs The N27WZ07 is a high performance dual buffer with open drain outputs operating from a.5 to 5.5 V supply. The internal circuit is composed of multiple stages, including
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output
Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package
NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution
LM339, LM239, LM2901, LM2901V, NCV2901, MC3302. Single Supply Quad Comparators
LM339, LM239, LM290, LM290V, NCV290, MC3302 Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer, automotive,
74HCT157. Quad 2 Input Data Selectors / Multiplexers. High Performance Silicon Gate CMOS
74HCT57 Quad 2 Input Data Selectors / Multiplexers High Performance Silicon Gate CMOS The 74HCT57 is identical in pinout to the S57. The device inputs are compatible with standard CMOS outputs; with pullup
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY
Retriggerable Monostable Multivibrators These dc triggered multivibrators feature pulse width control by three methods. The basic pulse width is programmed by selection of external resistance and capacitance
LM393, LM293, LM2903, LM2903V, NCV2903. Low Offset Voltage Dual Comparators
, LM293, LM293, LM293V, NCV293 Low Offset Voltage Dual Comparators The series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
MC34164, MC33164, NCV33164
MC3464, MC3364, NCV3364 Micropower Undervoltage Sensing Circuits The MC3464 series are undervoltage sensing circuits specifically designed for use as reset controllers in portable microprocessor based
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector
NB2879A. Low Power, Reduced EMI Clock Synthesizer
Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic
MC10ELT22, MC100ELT22. 5VНDual TTL to Differential PECL Translator
5VНual TTL to ifferential PECL Translator The MC0ELT/00ELT22 is a dual TTL to differential PECL translator. Because PECL (Positive ECL) levels are used only +5 V and ground are required. The small outline
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
MC GHz Low Power Prescaler With Stand-By Mode
2.5 GHz Low Power Prescaler With Stand-By Mode Description The M1295 is a single modulus prescaler for low power frequency division of a 2.5 GHz high frequency input signal. MOSAI V technology is utilized
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
MC14066B. Quad Analog Switch/Quad Multiplexer
Quad Analog Switch/Quad Multiplexer The MC4066B consists of four independent switches capable of controlling either digital or analog signals. This quad bilateral switch is useful in signal gating, chopper,
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
NTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package
NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry
MC74HCT4066A. Quad Analog Switch/ Multiplexer/Demultiplexer with LSTTL Compatible Inputs. High Performance Silicon Gate CMOS
MC4HCT4066A Quad Analog Switch/ Multiplexer/Demultiplexer with LSTTL Compatible Inputs High Performance Silicon Gate CMOS The MC4HCT4066A utilizes silicon gate CMOS technology to achieve fast propagation
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
MARKING DIAGRAMS LOGIC DIAGRAM PIN ASSIGNMENT ORDERING INFORMATION FUNCTION TABLE DIP 14 N SUFFIX CASE 646 MC74HC4066AN AWLYYWW
High Performance Silicon Gate CMOS The MC74HC466A utilizes silicon gate CMOS technology to achieve fast propagation delays, low ON resistances, and low OFF channel leakage current. This bilateral switch/
MC14001B Series. B-Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B
MC4B Series B-Suffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
NSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications