NLAS4717EP. 4.5 High Bandwidth, Dual SPDT Analog Switch

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4.5 High Bandwidth, Dual SPDT Analog Switch The NLAS477EP is an advanced CMOS analog switch fabricated in submicron silicon gate CMOS technology.

1 4.5 High Bandwidth, Dual SPDT Analog Switch The NLAS477EP is an advanced CMOS analog switch fabricated in submicron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw (SPDT) switch featuring low R DS(on) of 4.5 at 3. V. The device also features guaranteed BreakBeforeMake (BBM) switching, assuring the switches never short the driver. The NLAS477EP is available in two small size packages: Microbump: 2. x.5 mm WQFN:.4 x.8 mm Features Low R DS(on) : 3. V Matching Between the Switches.5 Wide Voltage Range:.8 V to 5.5 V High Bandwidth > 9 MHz.65 V to 5.5 V Operating Range Low Threshold Voltages on Pins 4 and 8 (CTRL Pins) UltraLow Charge Injection 6. pc Low Standby Current: I CC =. na T A = 25 C *OVT on Pins 4 and 8 (CTRL Logic Pins) These are PbFree Devices Typical Applications Cell Phones PDAs MP3s Digital Still Cameras USB 2. Full Speed (USB.) 2 Mbps Compliant Important Information ESD Protection: Human Body Model (HBM) = 25 V, Machine Model (MM) = 2 V Latchup Max Rating: 2 ma (Per JEDEC EIA/JESD78) PintoPin Compatible with MAX477 *OVT Overvoltage Tolerant (OVT) specific pins operate higher than normal supply voltages, with no damage to the devices or to signal integrity. IN_ A Microbump CASE 489AA FUNCTION TABLE NO_ OFF ON MARKING DIAGRAMS A = Assembly Location Y = Year W, WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION NC_ ON OFF Device Package Shipping NLAS477EPFCTG NLAS477EPMTR2G A Microbump (PbFree) WQFN (PbFree) 477EP AYWW AWM WQFN CASE 488AQ AW = Specific Device Code M = Date Code = PbFree Device (Note: Microdot may be in either location) 3 / Tape & Reel 3 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor Components Industries, LLC, 2 October, 2 Rev. 7 Publication Order Number: NLAS477EP/D

2 GND NO 2 NC C B A NC2 COM 3 NO2 IN C 2 A 2 IN2 IN 4 9 COM2 COM C 3 A 3 COM2 NC 5 8 IN2 NO C 4 B 4 A 4 NO2 6 7 VCC GND NC2 Microbump (Top View) WQFN (Top View) Figure. Device Circuit Diagrams and Pin Configurations MAXIMUM RATINGS Symbol Parameter Value Unit V+ DC Supply Voltage.5 to 7. V V IS Analog Voltage (V NO, V NC, or V COM ) (Note ).5 V IS.5 V V IN Digital Select Voltage.5 V I 7. V I IK DC Current, Into or Out of Any Pin (Continuous) ma I PK Peak Current (% Duty Cycle) 2 ma Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Signal voltage on NC, NO, and COM exceeding VCC or GND are clamped by the internal diodes. Limit forward diode current to maximum current rating. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V+ DC Supply Voltage V V IN Digital Select Voltage GND 5.5 V V IS Analog Voltage (NC, NO, COM) GND V T A Operating Temperature Range C t r, t f Rise or Fall Time, SELECT = 3.3 V.3 V = 5. V.5 V 2 ns/v 2

3 ANALOG SWITCH DC CHARACTERISTICS 4 C to +85 C Symbol Parameter Condition (V) Min Max Unit V IH Logic High Voltage V OUT =. V I OUT 2 A.65 to to to 5.5 x.55 x.5 2. V V IL Logic Low Voltage V OUT =. V I OUT 2 A.65 to to to 5.5 x.2 x.2.8 V I IN Leakage Current V IN = or GND na Power Supply Range All V I CC Supply Current V IN = or GND I OUT = A A ANALOG SWITCH CHARACTERISTICS Digital Section (Voltages Referenced to GND) 4 C to +85 C Symbol Parameter Condition (V) Min Typ Max Unit R ON ON Resistance I COM = ma (Note 2) V IS = to R ON R FLAT[ON] ON Resistance Match Between Channels (Note 2 and 3) ON Resistance Flatness (Note 4) I COM = ma V IS = to I COM = ma V IS = to I NO_[OFF] I NC_[OFF] NO_, NC_ OffLeakage Current (Note 5) V COM =.3 V or 3.3 V V NO or V NC =.3 V or 3.3 V na V COM = V or 5. V V NO or V NC = V or 5. V I COM_[ON] COM_ OnLeakage Current (Note 5) V COM =.3 V or 3.3 V V NO or V NC =.3 V or 3.3 V na V COM = V or 5. V V NO or V NC = V or 5. V

4 ANALOG SWITCH AC CHARACTERISTICS 4 C to +85 C Symbol Parameter Condition (V) Min Typ Max Unit t ON TurnOn Time V NC_, V NO_ = V IH or V IL.8 to ns R L = 3, C L = 35 pf V IN[x] = V IH or V IL t OFF TurnOff Time V NC_, V NO_ = V IH or V IL R L = 3, C L = 35 pf.8 to ns V IN[x] = V IH or V IL t BBM BreakBeforeMake Time Delay (Note 5) V NC_, V NO_ =.5 V R L = 3, C L = 35 pf 8. ns t SKEW Skew (Note 5) 2. R ON characterized for range (.65 V to 5.5 V). 3. R ON = R ON (MAX) R ON (MIN). 4. R FLAT[ON] = R ON (MAX) R ON (MIN), measured over range. 5. Guaranteed by design. R S = 39, C L = 5 pf.5 2. ns ANALOG SWITCH APPLICATION CHARACTERISTICS 4 C to +85 C Symbol Parameter Condition (V) Q Charge Injection V IN = to GND 3. R In =, C L =. nf 5. Q = C L V OUT Min Typ Max Unit pc VISO OffIsolation f = MHz V NO _, V NC _ =. Vpp R L = 5, C L = 5. pf f =. MHz V NO _, V NC _ =. Vpp R L = 5, C L = 5. pf VCT CrossTalk f = MHz V NO _, V NC _ =. Vpp R L = 5, C L = 5. pf f =. MHz V NO _, V NC _ =. Vpp R L = 5, C L = 5. pf.65 to db to db BW OnChannel 3. db Bandwidth Signal = db R L = 5, C L = 5. pf.8 to 5. 9 MHz THD Total Harmonic Distortion V COM = 2. Vpp, RL = 6 T A = 25 C.2 % C NO_[OFF] C NC_[OFF] C NO_[ON] C NC_[ON] NO_, NC_ OFFCapacitance NO_, NC_ ONCapacitance F =. MHz 5 pf F =. MHz 38 pf 4

5 2. 3. R DS(on) ( ) C +25 C 4 C R DS(on) ( ) C +25 C 4 C V COM (V) V COM (V) Figure 2. R = 5. V Figure 3. R = 3. V R DS(on) ( ).2. R DS(on) ( ) V. 3. V C +25C TEMPERATURE ( C) +85C.8 4C +25C TEMPERATURE ( C) +85C Figure 4. Delta R = 5. V Figure 5. Delta R = 3. V V Q (cp) 2 3. V THD (%) V. V COM (V) FREQUENCY (Hz) Figure 6. Charge Injection Figure 7. Total Harmonic Distortion 5

6 (db) 2 =.65 V to 5.5 V OFFIsolation 4... (MHz) CrossTalk degress (db) 45 = 3. V to 5. V T A = 4 C to +85 C Bandwidth 3 db Phase 3 deg. (MHz) Figure 8. Frequency Response Figure 9. Bandwidth and Phase 6

7 . F DUT V OUT 3 35 pf GND 9% t BMM 9% of V OH Switch Select Pin GND Figure. t BBM (Time BreakBeforeMake) DUT V 5% 5%. F Open V OUT 3 35 pf V OH 9% 9% V OL t ON t OFF Figure. t ON /t OFF DUT 3 V 5% 5% Open V OUT 35 pf VOH V OL % % t OFF t ON Figure 2. t ON /t OFF 7

8 Reference DUT 5 5 Generator Transmitted 5 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. V ISO, Bandwidth and V ONL are independent of the input signal direction. V ISO = Off Channel Isolation = 2 Log V OUT for V IN at khz VIN V ONL = On Channel Loss = 2 Log V OUT for V IN at khz to 5 MHz VIN Bandwidth (BW) = the frequency 3. db below V ONL V CT = Use V ISO setup and test to all other switch analog input/outputs terminated with 5 Figure 3. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/V ONL DUT Open V IN GND C L V IN Off On Off V OUT Figure 4. Charge Injection: (Q) 8

9 PACKAGE DIMENSIONS Microbump CASE 489AA ISSUE A 4 X. C PIN ONE CORNER D A B E NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS.. C.75 C A2 A A C SEATING PLANE MILLIMETERS DIM MIN MAX A.65 A A D.965 BSC E.465 BSC b e.5 BSC D.5 BSC E. BSC D e X b.5 C A B.5 C C B A e E 9

10 PACKAGE DIMENSIONS WQFN,.4x.8,.4P CASE 488AQ ISSUE C PIN REFERENCE 2X 2X.5 C.5 C. C.8 C 9 X L L D ÉÉ ÉÉ 3 5 A A3 6 X b A e/2 e E B A C.5 C SEATING PLANE. C A B NOTE 3 M EXPOSED Cu A DETAIL A Bottom View (Optional) ÉÉÉ DETAIL B Side View (Optional) EDGE OF PACKAGE MOLD CMPD A3 NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN.25 AND.3 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. EXPOSED PADS CONNECTED TO DIE FLAG. USED AS TEST CONTACTS. MILLIMETERS DIM MIN MAX A.7.8 A..5 A3.2 REF b.5.25 D.4 BSC E e.8 BSC.4 BSC L L M..5 MOUNTING FOOTPRINT*.7 9 X PITCH X SCALE 2: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NLAS477EP/D

NLAS5157. Ultra-Low 0.4 SPDT Analog Switch

NLAS5157. Ultra-Low 0.4 SPDT Analog Switch Ultra-Low.4 SPDT Analog Switch The NLAS5157 is Single Pole Double Throw (SPDT) switch designed for audio systems in portable applications. The NLAS5157 features Ultra Low R ON of.4 typical at = V and.15