CCSAC43N40A10 N-Type Semiconductor Discharge Switch, Bare Die
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1 Data Sheet (Rev# - ##/##/####) CCSAC43N40A10 Features: 4000V Peak Off-State Voltage 5 ka Repetitive Ipk Capability 25KA/uS di/dt Capability Low On-State Voltage Low Trigger Current Application Specific Operating Conditions: Package Description: The CCS features the high peak current capability and low On-state voltage drop common to SCR thyristors combined with high di/dt capability. This semiconductor is intended to be a solid state replacement for spark or gas type devices commonly used in pulse power applications. All bond areas are metalized with solderable metal surfaces providing the user with a solderable device that may be installed using conventional or lead free solders. Schematic Symbol 1
2 Module Dimensions (Inches) 2
3 Absolute Maximum Ratings Symbol Value Units Peak Off-State Voltage V DRM 4 kv Peak Reverse Voltage V RRM -5 V Off-State Rate of Change of Voltage Immunity dv/dt 1 kv/µsec Continuous Anode Current at Tj = 125⁰C I A A Repetitive Peak Anode Current (Pulse Width = 10µSec) I ASM 5.0 ka Nonrepetitive Peak Anode Current (Pulse Width=10uSec) I ASM 8 ka Rate of Change of Current di/dt 25 ka/µsec Peak Gate Current (1µSec) I Gpk 50 A Max. Reverse Gate-Cathode Voltage V GR -9 V Maximum Junction Temperature T JM 125 ⁰C Maximum Soldering Temperature (Installation) 320 ⁰C Performance Characteristics (T J = 25⁰C unless otherwise specified.) Parameters Symbol Test Conditions Min. Typ. Max. Units Anode to Cathode Breakdown Voltage V DR G to K shorted, I A =1mA 4 kv Anode-Cathode Off-State Current I D G to K shorted, V AK =4000V T J =25 o C ua T J =125 o C ua Turn-On Threshold Current V GK(TH) V AK =V GK, I AK =1mA, see Note: 1 70 ma Gate-Cathode Leakage Current I GK(lkg) V GK =-9V, see Note: 1-20 ua Anode-Cathode On-State Voltage V T I T =100A T J =25 o C 1.8 V Ig = 500 ma T J =125 o C 2 V Turn-on Delay Time t D(ON) C=0.75 uf Capacitor discharge 160 ns Pk Rate of Change of Current (measured) di/dt Ls=150nH 25 ka/us V R Peak Anode Current I gk = 10 ohms AK = 3750 P V 2950 A Gate di/dt =100 A/us T c =25 C Notes: 1. Measurements made with a 10 Ohm shorting resistor connected between the gate and cathode. 3
4 Typical Performance Curves (unless otherwise specified) Figure 1: Measured Low Current On-State Characteristics. Figure 2: Predicted I2t data for various number of discharge cycles. Pulses are assumed rectangular. The device junction temperature TJ is assumed to be at 25oC before each discharge event. 4
5 Figure 3: Typical test circuit and waveforms. Packaging and Handling 1. ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES IN ALL ASSEMBLY AND TEST AREAS. Proper handling procedures must be observed to prevent electrostatic discharge which may result in permanent damage to the device. 2. The user is required to encapsulate the device in an encapsulant material prior to applying high voltage. This prevents debris and contaminants from compromising the JTE area. 2. Use of a separate gate return path instead of the cathode power contact is recommended to minimize the effects of rapidly changing Anode-Cathode currents. 3. Shorting resistor R GK is application specific. It can control the gate drive requirements and some device properties. However, R GK = 10 Ohms satisfies most application requirements. 4. Installation reflow temperature should not exceed 320 C or device degradation may result. 5
6 Revision History: Rev Date EA# Nature of Change 1 ##/##/#### ########-AB-#### 6
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March 2014 MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M 6-Pin DIP Random-Phase Optoisolators Triac Driver Output (250/400 Volt Peak) Features Excellent I FT Stability IR Emitting
MCR703A Series. Thyristors. Surface Mount 100V -600V > MCR703A Series G K. Description
MCR703 Series Pb Description PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability
Value Unit I T(RMS) RMS on-state current A A Tj = 25 C I FSM current (Tj initial = 25 C)
MAIN FEATURES: DIODE / SCR MODULE Symbol Value Unit I T(RMS) 50-70-85 A V DRM /V RRM 800 and 1200 V I GT 50 and 100 ma DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge
Battery Charger Circuit Using SCR
Battery Charger Circuit Using SCR Introduction to SCR: SCR is abbreviation for Silicon Controlled Rectifier. SCR has three pins anode, cathode and gate as shown in the below figure. It is made up of there
provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40
APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off
MCR100 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V
MCR0 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers,
2N6504 Series. Thyristors. Surface Mount V > 2N6504 Series. Description
2N6504 Series Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions for
LDR3 Outline Dimensions. Dimension Inches Millimeters
OUTLINE DRAWING Dual SCR Module 5 Amperes / 16-18 Volts Ordering Information: Select the complete eight-digit module part number from the table below. Example: LDR3165 is a 16V, 5 Ampere Dual SCR Isolated
SLD8N6 65S / SLU8N65 5S
SLD8N65S / SLU8N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
TN1610H-6T. High temperature 16 A SCRs. Description. Features. Applications
High temperature 16 A SCRs Datasheet production data Description Thanks to a junction temperature T j up to 150 C and a non-isolated TO-220 package, the TN1610H-6T offers high thermal performance operation
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
MOC3031M MOC3032M MOC3033M MOC3041M MOC3042M MOC3043M. Parameters Symbol Device Value Units TOTAL DEVICE Storage Temperature. T STG All -40 to +150 C
-PIN DIP ZERO-CROSS DESCRIPTION The MOC303XM and MOC304XM devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage
TM8050H-8W. 80 A high temperature Thyristor (SCR) Applications
80 A high temperature Thyristor (SCR) Datasheet - production data G TAB = A A K Applications Solid state switch Battery charging system Variable speed motor drive Industrial welding systems AC-DC rectifier
PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab
GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated, sensitive gate thyristors SYMBOL PARAMETER MAX. MAX. MAX. UNIT in a plastic envelope, intended for use in general purpose switching and BT58-5R 6R 8R