SMCTAC65N16 Solidtron TM N-MOS VCS, Bare Die Data Sheet (Rev 0-10/28/10)

Transcription

1 Description Package Size - 6 The voltage controlled (VCS) discharge switch is an n- type MOS-Controlled Thyristor semiconductor. The VCS features the high peak current capability and low Onstate voltage drop common to SCR thyristors combined with extremely high di/dt capability. This semiconductor is intended for the control of high power circuits with the use of very small amounts of input energy and is ideally suited for capacitor discharge applications. The cathode and gate contact pads are metallized with aluminum for aluminum m wire bondable surfaces. The Anode is metalized ed with solderable metal providing the user with a solderable die attach device that may be installed using conventional or lead free solders. Gate Return Bond Area Gate Bond Area Anode Bond Area Cathode Bond Area Bare Die Schematic Symbol Anode (A) Features Gate (G) 1400V Peak Off-State Voltage <150nSec Turn-On Delay Low On-State Voltage MOS Gated Control Gate Return (GR) Cathode (K) Absolute Maximum Ratings SYMBOL VALUE UNITS Peak Off-State Voltage V DRM 1400 V Peak Reverse Voltage V RRM -5 V Off-State Rate of Change of Voltage Immunity dv/dt 5000 V/uSec Continuous Anode Current at 110 o C I A A Repetitive Peak Anode Current (Pulse Width=1uSec) I ASM 6000 A Rate of Change of Current di/dt 125 ka/usec Continuous Gate-Cathode Voltage V GKS +/-20 V Peak Gate-Cathode Voltage V GKM +/-25 V Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State V GK(OFF-MIN) -5 V Maximum Junction Temperature T JM 150 o C Maximum Soldering Temperature (Installation) 350 o C

2 Performance Characteristics T J =25 o C unless otherwise specified Measurements Parameters Symbol Test Conditions Min. Typ. Max. Units Anode to Cathode Breakdown Voltage V (BR) V GK =-5, I A =1mA 1400 V Anode-Cathode Off-State Current i D V GE =-5V, V AK =1200V T C =25 o C < ua T C =150 o C ua Gate-Cathode Turn-On Threshold Voltage V GK(TH) V AK =V GK, I AK =1mA 0.7 V Gate-Cathode Leakage Current I GK(lkg) V GK =+/-20V 750 na Anode-Cathode On-State Voltage V T I T =65A, V GK =+5V T C =25 o C V (See Figures 1,2 & 3) T C =150 o C V Input Capacitance C ISS 18 nf Turn-on Delay Time t D(ON) 0.2uF Capacitor Discharge ns Rate of Change of Current di/dt T J =25 o C, V GK = -5V to +5V 58 ka/usec Peak Anode Current I P V AK =800V, RG= A Discharge Event Energy E DIS L S = 8nH (See Figures 4,5 45&6) 36 mj Turn-on Delay Time t D(ON) 0.2uF Capacitor Discharge ns Rate of Change of Current di/dt T J =150 o C, V GK = -5V to +5V 100 ka/usec Peak Anode Current I P V AK =1200V, RG= A Discharge Event Energy E DIS L S = 8nH (See Figures 4,5 & 6) 74 mj Typical Performance Curves (unless otherwise specified) Figure 1. On-State Characteristics Figure 2. On-State Characteristics Figure 3. Predicted High Current On-State Characteristics

3 Typical Performance Curves (Continued) Figure 4. Turn-On Delay Characteristics Figure 5. Turn-On Delay Characteristics R 47 G = , T J =25 o C R 47 &50 G =4.7 50, T J =25 o C & 150 o C Figure uF Discharge Pulse Performance Characteristics (See Figure 9.)

4 Typical Performance Curves (Continued) Figure 8. Pulses to Failure (Pulse Widths < 100uSec) L series(total) is caculated using 1/(f2π) 2 C Where f=frequency of I A (see figure 10) R Sense is a calibrated Current Viewing Resistor (CVR) Figure uF Pulsed Discharge Circuit Schematic T D(ON) V GK V AK 10% 0 Ref. The waveform shown is 90% representative of one produced using a I very low inductance circuit (<10nH). P di/dt - 10% to 50% of I A I A 0 Ref. V GK is held positive until I A oscillations have ended ( I A =0). Figure uF Pulsed Discharge Circuit Waveforms

5 A1. Use of Gate Return Bond Area. The MCT is designed for high di/dt applications. An independent cathode connection or "Gate Return Bond Area" was provided to minimize the effects of rapidly changing Anode-Cathode current on the Gate control voltage, (V=L*di/dt). It is therefore, critcal that the user utilize the Gate Return Bond Area as the point at which the gate driver reference (return) is attached to the VCS device. Note: All product specifications and data are subject to change without notice. The device specifications listed in this datasheet may not be considered as an assurance of the component characteristics. Devices will need to be tested and qualified in their respective applications. Depending on the application adjustments to the data contained in this datasheet may be necessary. The use of Silicon Power products in medical, life saving, or life sustaining applications and systems is subject to prior specification andwritten approvalby SiliconPower. Wetherefore strongly recommend prior consultation of our personal. Packaging and Handling 1. The cathode and gate contact pads are metallized with aluminum for aluminum wire bondable surfaces. The anode bond area is metalized with a solderable metal surfaces(plating meets IPC-4552 Specification for Electroless Nickel/Immersion Gold (ENIG), 3 to 6 μm [118.1 to μin] Ni/ 0.05 μm minimum [1.97 μin minimum] Au providing the user with a solderable device. 2. This device must be coated or potted using a dielectric material prior to subjecting to voltage above 1kV. 3. Installation reflow temperature should not exceed 350 o C or device degradation may result. 4. Proper handling procedures must be observed to prevent electrostatic discharge which may result in permanent tdamage to the gate of fthe device ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES IN ALL ASSEMBLY AND TEST AREAS

6 Die Dimensions

7 Revision History Rev Date EA # Nature of Change NB-0011 Initial Issue