Electrothermal Actuator
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1 Electrothermal Actuator Generated by CleanRoom
2 Substrate thickness: 50 (µm) Comments: 1. Substrate Si Czochralski (100)
3 Film Thickness: 600 nm (Conformal) Comments: 2. Deposition Si3N4 PECVD (Ar)
4 3. Deposition PolySi LPCVD (SiH4) Film Thickness: 500 nm (Conformal) Comments:Deposit GND POLY
5 POLY0 (GDS#13);Leave Photoresist Inside Comments:Pattern ground plane 4. Lithography UV Contact (Suss)
6 Etch Thickness: 500 nm (Etch Through) Comments: 5. Etch PolySi Dry (SF6-Plasma)
7 HOLE0 (GDS#41);Leave Photoresist Outside Comments:provide holes for POLY0 6. Lithography UV Contact (Suss)
8 Etch Thickness: 500 nm (Etch Through) Comments: 7. Etch PolySi Dry (SF6-Plasma)
9 8. Deposition PSG LPCVD (Generic) Film Thickness: 2000 nm (Conformal) Comments:First Sacrificial PSG
10 DIMPLE (GDS#50);Leave Photoresist Outside Comments:Dimples mask 9. Lithography UV Contact (Suss)
11 Etch Thickness: 750 nm (Partial Etch) Comments: 10. Etch PSG Generic (Generic)
12 11. Lithography UV Contact (Suss) ANCHOR1 (GDS#43);Leave Photoresist Outside Comments:Anchor 1 mask
13 Etch Thickness: 2000 nm (Etch Through) Comments: 12. Etch PSG Generic (Generic)
14 13. Deposition PolySi LPCVD (SiH4) Film Thickness: 2000 nm (Conformal) Comments:Deposition of second poly (POLY1)
15 14. Lithography UV Contact (Suss) POLY1 (GDS#45);Leave Photoresist Inside Comments:Define POLY1, first structural layer
16 Etch Thickness: 2000 nm (Etch Through) Comments: 15. Etch PolySi Dry (SF6-Plasma)
17 HOLE1 (GDS#0);Leave Photoresist Outside Comments:provide holes for POLY1 16. Lithography UV Contact (Suss)
18 Etch Thickness: 2000 nm (Etch Through) Comments: 17. Etch PolySi Dry (SF6-Plasma)
19 18. Deposition PSG Generic (Generic) Film Thickness: 750 nm (Conformal) Comments:Deposition of second sacrificial PSG
20 19. Lithography UV Contact (Suss) POLY1_POLY2_VIA (GDS#47);Leave Photoresist Outside Comments:P1P2VIA, Provide structural via to connect POLY1 and POLY2
21 Etch Thickness: 750 nm (Etch Through) Comments: 20. Etch PSG Generic (Generic)
22 21. Lithography UV Contact (Suss) ANCHOR2 (GDS#52);Leave Photoresist Outside Comments:ANCHOR2: Provide Anchors for second structural POLY
23 Etch Thickness: 750 nm (Etch Through) Comments: 22. Etch PSG Generic (Generic)
24 23. Deposition PolySi LPCVD (SiH4) Film Thickness: 1500 nm (Conformal) Comments:Deposition of second strucutral POLY (POLY2)
25 24. Lithography UV Contact (Suss) POLY2 (GDS#49);Leave Photoresist Inside Comments:Define second structural level (POLY2)
26 Etch Thickness: 1500 nm (Etch Through) Comments: 25. Etch PolySi Dry (SF6-Plasma)
27 HOLE2 (GDS#1);Leave Photoresist Outside Comments:provide holes for POLY2 26. Lithography UV Contact (Suss)
28 Etch Thickness: 1500 nm (Etch Through) Comments: 27. Etch PolySi Dry (SF6-Plasma)
29 28. Deposition PR-S3800 Spin (S3810) Film Thickness: 500 nm (Conformal) Comments:
30 29. Lithography UV Contact (Suss) METAL (GDS#51);Leave Photoresist Outside Comments:pattern METAL level for Lift-off
31 Etch Thickness: 500 nm (Etch Through) Comments: 30. Etch PR-S3800 Wet (1112A)
32 31. Deposition Al Sputter (Ar-Ambient) Film Thickness: 1000 nm (Conformal) Comments:
33 32. Lithography UV Contact (Suss) HOLEM (GDS#48);Leave Photoresist Outside Comments:pattern HOLES in METAL
34 Etch Thickness: 1000 nm (Etch Through) Comments: 33. Etch Al Wet (PAN)
35 Etch Thickness: Lift off Comments: 34. Etch PR-S3800 Wet (Lift-off)
36 Etch Thickness: Sacrificial Etch Comments: 35. Etch PSG Generic (Generic)
37 Color Key Material Step Transparency Color Si3N PolySi PSG 8 32 PolySi PSG PolySi PR-S Al
38 Summary (1-1) Lithography: 12 Mask Levels Layer Name Layer Number Side Leave Photoresist Comments POLY0 13 Top Inside Pattern ground plane HOLE0 41 Top Outside provide holes for POLY0 DIMPLE 50 Top Outside Dimples mask ANCHOR1 43 Top Outside Anchor 1 mask POLY1 45 Top Inside Define POLY1, first structural layer HOLE1 0 Top Outside provide holes for POLY1 POLY1_POLY2_VIA 47 Top Outside P1P2VIA, Provide structural via to connect POLY1 and POLY2 ANCHOR2 52 Top Outside ANCHOR2: Provide Anchors for second structural POLY
39 Summary (1-2) Lithography: 12 Mask Levels Layer Name Layer Number Side Leave Photoresist Comments POLY2 49 Top Inside Define second structural level (POLY2) HOLE2 1 Top Outside provide holes for POLY2 METAL 51 Top Outside pattern METAL level for Lift-off HOLEM 48 Top Outside pattern HOLES in METAL
40 Summary (2) Depositions/Implants: 8 Material Process Process ID Side Thickness (nm) Comments Si3N4 PECVD Ar Top 600 PolySi LPCVD SiH4 Top 500 Deposit GND POLY PSG(Sacrifice) LPCVD Generic Top 2000 First Sacrificial PSG PolySi LPCVD SiH4 Top 2000 PSG(Sacrifice) Generic Generic Top 750 PolySi LPCVD SiH4 Top 1500 Deposition of second poly (POLY1) Deposition of second sacrificial PSG Deposition of second strucutral POLY (POLY2) PR-S3800 Spin S3810 Top 500 Al Sputter Ar-Ambient Top 1000
41 Summary (3-1) Etches: 14 Material Process Process ID Side Etch depth (nm) Comments PolySi Dry SF6-Plasma Top 500(Etch Through) PolySi Dry SF6-Plasma Top 500(Etch Through) PSG Generic Generic Top 750(Partial Etch) PSG Generic Generic Top 2000(Etch Through) PolySi Dry SF6-Plasma Top 2000(Etch Through) PolySi Dry SF6-Plasma Top 2000(Etch Through) PSG Generic Generic Top 750(Etch Through) PSG Generic Generic Top 750(Etch Through)
42 Summary (3-2) Etches: 14 Material Process Process ID Side Etch depth (nm) Comments PolySi Dry SF6-Plasma Both 1500(Etch Through) PolySi Dry SF6-Plasma Both 1500(Etch Through) PR-S3800 Wet 1112A Top 500(Etch Through) Al Wet PAN Top 1000(Etch Through) PR-S3800 Wet Lift-off Top Lift off PSG Generic Generic Top Sacrificial Etch
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