EMA5 / UMA5N / FMA5A. V CC -50V -100mA 2.2kW 47kW I C(MAX.) R 1 R 2. Datasheet
|
|
|
- Margaret Perry
- 6 years ago
- Views:
Transcription
1 M5 / UM5N / FM5 PNP -100m -50V Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Faturs Paramtr V CC -50V -100m 2.2kW 47kW I C(MX.) R 1 R 2 1) Built-In Biasing Rsistors. 2) Two DT123J chips in on packag. 3) mittr(gnd)-common typ. 4) Built-in bias rsistors nabl th configuration of an invrtr circuit without conncting xtrnal Outlin input rsistors (s innr circuit). 5) Th bias rsistors consist of thin-film rsistors Innr circuit with complt isolation to allow ngativ biasing of th input. Thy also hav th advantag of compltly liminating parasitic ffcts. 6) Only th on/off conditions nd to b st for opration, making th circuit dsign asy. 7) Lad Fr/RoHS Compliant. Tr1 and Tr2 MT5 SMT5 IN M5 (SC-107BB) FM5 (SC-74) M5 / UM5N GND IN UMT5 UM5N SOT-353 (SC-88) IN FM5 GND IN pplication OUT OUT OUT OUT Intrfac circuit, Drivr circuit Packaging spcifications Part No. Packag Packag siz (mm) Taping cod Rl siz (mm) M5 MT T2R 180 Tap width (mm) UM5N UMT TR Basic ordring unit (pcs) Marking 8, ,000 5 FM5 SMT T , ROHM Co., Ltd. ll rights rsrvd. 1/ Rv.B
2 M5 / UM5N / FM5 Data Sht bsolut maximum ratings (Ta = 25 C) <For Tr1 and Tr2 in common> Paramtr Symbol Valus Unit Supply voltag Input voltag Output currnt V CC -50 V V IN -12 to +5 V I O -100 m Collctor currnt I C(MX.) *1-100 m Powr dissipation M5 / UM5N FM5 P D *2 150 (Total) *3 300 (Total) *4 mw mw Junction tmpratur Rang of storag tmpratur T j 150 C T stg -55 to +150 C lctrical charactristics(ta = 25 C) <For Tr1 and Tr2 in common> Paramtr Symbol Conditions Min. Typ. Max. Unit Input voltag V I(off) V I(on) V CC = -5V, I O = -100m V O = -0.3V, I O = -5m V Output voltag V O(on) I O / I I = -5m / -0.25m V Input currnt I I V I = -5V m Output currnt I O(off) V CC = -50V, V I = 0V m DC currnt gain G I V O = -5V, I O = -10m Input rsistanc R kw Rsistanc ratio R 2 /R Transition frquncy f T *1 V C = -10V, I = 5m, f = 100MHz MHz *1 Charactristics of built-in transistor *2 ach trminal mountd on a rfrnc footprint *3 120mW pr lmnt must not b xcdd. *4 200mW pr lmnt must not b xcdd ROHM Co., Ltd. ll rights rsrvd. 2/ Rv.B
3 M5 / UM5N / FM5 Data Sht lctrical charactristic curvs(ta = 25 C) Fig.1 Input voltag vs. output currnt (ON charactristics) Fig.2 Output currnt vs. input voltag (OFF charactristics) INPUT VOLTG : V I(on) [V] OUTPUT CURRNT : I O [] OUTPUT CURRNT : I O [] INPUT VOLTG : V I(off) [V] Fig.3 Output currnt vs. output voltag Fig.4 DC currnt gain vs. output currnt OUTPUT CURRNT : I O [m] I I = -500μ Ta=25ºC -450μ -400μ -350μ -300μ -250μ -200μ -150μ -100μ -50μ DC CURRNT GIN : G I OUTPUT VOLTG : V O [V] OUTPUT CURRNT : I O [] 2012 ROHM Co., Ltd. ll rights rsrvd. 3/ Rv.B
4 M5 / UM5N / FM5 Data Sht lctrical charactristic curvs(ta = 25 C) Fig.5 Output voltag vs. output currnt OUTPUT VOLTG : V O(on) [V] OUTPUT CURRNT : I O [] 2012 ROHM Co., Ltd. ll rights rsrvd. 4/ Rv.B
5 1 l1 1 L Lp H L Lp M5 / UM5N / FM5 Data Sht Dimnsions (Unit : mm) MT5 b D x S c y S S b2 Dimnsion in mm/inchs Pattrm of trminal position aras MIN MX MIN MX b c D H L Lp x y MIN MX MIN MX b l ROHM Co., Ltd. ll rights rsrvd. 5/ Rv.B
6 1 l1 1 H L1 Lp M5 / UM5N / FM5 Data Sht Dimnsions (Unit : mm) UMT5 D Q c b x S 3 y S S b2 Dimnsion in mm/inchs Pattrm of trminal position aras MIN MX MIN MX b c D H L Lp Q x y MIN MX MIN MX b l ROHM Co., Ltd. ll rights rsrvd. 6/ Rv.B
7 1 l1 1 L1 Lp H M5 / UM5N / FM5 Data Sht Dimnsions (Unit : mm) SMT5 D c Q b x S 3 y S S b2 Pattrm of trminal position aras MIN MX MIN MX b c D H L Lp Q x y MIN MX MIN MX b l Dimnsion in mm/inchs 2012 ROHM Co., Ltd. ll rights rsrvd. 7/ Rv.B
8 Notic Nots No copying or rproduction of this documnt, in part or in whol, is prmittd without th consnt of ROHM Co.,Ltd. Th contnt spcifid hrin is subjct to chang for improvmnt without notic. Th contnt spcifid hrin is for th purpos of introducing ROHM's products (hrinaftr "Products"). If you wish to us any such Product, plas b sur to rfr to th spcifications, which can b obtaind from ROHM upon rqust. xampls of application circuits, circuit constants and any othr information containd hrin illustrat th standard usag and oprations of th Products. Th priphral conditions must b takn into account whn dsigning circuits for mass production. Grat car was takn in nsuring th accuracy of th information spcifid in this documnt. Howvr, should you incur any damag arising from any inaccuracy or misprint of such information, ROHM shall bar no rsponsibility for such damag. Th tchnical information spcifid hrin is intndd only to show th typical functions of and xampls of application circuits for th Products. ROHM dos not grant you, xplicitly or implicitly, any licns to us or xrcis intllctual proprty or othr rights hld by ROHM and othr partis. ROHM shall bar no rsponsibility whatsovr for any disput arising from th us of such tchnical information. Th Products spcifid in this documnt ar intndd to b usd with gnral-us lctronic quipmnt or dvics (such as audio visual quipmnt, offic-automation quipmnt, communication dvics, lctronic appliancs and amusmnt dvics). Th Products spcifid in this documnt ar not dsignd to b radiation tolrant. Whil ROHM always maks fforts to nhanc th quality and rliability of its Products, a Product may fail or malfunction for a varity of rasons. Plas b sur to implmnt in your quipmnt using th Products safty masurs to guard against th possibility of physical injury, fir or any othr damag causd in th vnt of th failur of any Product, such as drating, rdundancy, fir control and fail-saf dsigns. ROHM shall bar no rsponsibility whatsovr for your us of any Product outsid of th prscribd scop or not in accordanc with th instruction manual. Th Products ar not dsignd or manufacturd to b usd with any quipmnt, dvic or systm which rquirs an xtrmly high lvl of rliability th failur or malfunction of which may rsult in a dirct thrat to human lif or crat a risk of human injury (such as a mdical instrumnt, transportation quipmnt, arospac machinry, nuclar-ractor controllr, fulcontrollr or othr safty dvic). ROHM shall bar no rsponsibility in any way for us of any of th Products for th abov spcial purposs. If a Product is intndd to b usd for any such spcial purpos, plas contact a ROHM sals rprsntativ bfor purchasing. If you intnd to xport or ship ovrsas any Product or tchnology spcifid hrin that may b controlld undr th Forign xchang and th Forign Trad Law, you will b rquird to obtain a licns or prmit undr th Law. Thank you for your accssing to ROHM product informations. Mor dtail product informations and catalogs ar availabl, plas contact us. ROHM Customr Support Systm ROHM Co., Ltd. ll rights rsrvd. R1120
DTA123E series V CC I C(MAX.) R 1 R 2. 50V 100mA 2.2k 2.2k. Datasheet. PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
DT123 sris PNP -100m -50V Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Paramtr V CC I C(MX.) R 1 R 2 Valu 50V 100m 2.2k 2.2k Faturs 1) Built-In Biasing Rsistors, R 1 = R 2 = 2.2k. Outlin
EMD3 / UMD3N / IMD3A V CC I C(MAX.) R 1 R 2. 50V 100mA. 10k. 10k. 50V 100mA. 10k. 10k. Datasheet
NPN + PNP Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu MT6 UMT6 V CC I C(MX.) Paramtr V CC I C(MX.) 50V 100m 10k 10k Valu 50V
EMD4 / UMD4N V CC I C(MAX.) R 1 R 2. 50V 100mA. 47kW. V CC -50V -100mA 10kW. Datasheet
NPN + PNP Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu EMT6 UMT6 V CC I C(MAX.) R 1 R 2 50V 100mA 47kW 47kW (1) (2) (3) (6) (5) (4) EMD4 (SC-107C)
UMH8N / IMH8A V CEO I C R 1. 50V 100mA 10k. Datasheet. Outline. Inner circuit
NPN 100m 50V Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr V CO I C Tr1 and Tr2 50V 100m 10k UMT6 UMH8N SOT-363 (SC-88) SMT6 IMH8 SOT-457 (SC-74) Faturs 1) Built-In
DTD114GK V CEO I C R. 50V 500mA 10kW. Datasheet. NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Outline Parameter Value SMT3
NPN 500mA 50V Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu SMT3 V CEO I C R 50V 500mA 10kW Bas Emittr Collctor DTD114GK SOT-346 (SC-59) Faturs 1) Built-In Biasing
US6H23 / IMH23 V CEO 20V V EBO 12V. 600mA R k. Datasheet. Outline Parameter Tr1 and Tr2 TUMT6 SMT6
NPN 600m 20V Digital Transistors (Bias Rsistor Built-in Transistors) For Muting. Datasht Outlin Paramtr Tr1 and Tr2 TUMT6 SMT6 V CO 20V V BO 12V I C 600m R US6H23 1 4.7k IMH23 SOT-457 (SC-74) Faturs 1)
2SA1579 / 2SA1514K. V CEO -120V -50mA I C. Datasheet. PNP -50mA -120V High-Voltage Amplifier Transistors. Outline
PNP -50mA 20V High-Voltag Amplifir Transistors Datasht Paramtr Valu V CEO 20V -50mA I C Outlin UMT3 SMT3 Collctor Bas Bas Emittr Emittr Collctor Faturs 1) High Brakdown Voltag (BV CEO = 20V) 2) Complmntary
DTD123YK V CC I C(MAX.) R 1 R 2. 50V 500mA 2.2kW 10kW. Datasheet. NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet Outline Parameter Value SMT3 V CC I C(MAX.) R 1 R 2 50V 500mA 2.2kW 10kW IN GND OUT DTD123YK SOT-346 (SC-59) Features 1)
AME. Shunt Bandgap Voltage Reference. General Description. Functional Block Diagram. Features. Typical Application. Applications
Gnral Dscription Th is a micropowr 2-trminal band-gap voltag rgulator diod. It oprats ovr a 30µA to 20mA currnt rang. Each circuit is trimmd at wafr sort to provid a ±0.50% and ±0.80% initial tolranc.
HSMP-482B RF power limiter diode
Products > RF Is/iscrts > PIN iods > Surfac Mount > HSMP-482 HSMP-482 RF powr limitr diod scription ifcycl status: ctiv Faturs Th HSMP-482x family of low rsistanc PIN diods ar optimizd for switch applications
N-Channel 40 V (D-S) MOSFET
N-Channl 4 V (D-S) MOSFET SUM2N4-m7L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) MAX. I D (A) d Q g (TYP.) 4.7 at V GS = V 2.2 at V GS = 4.5 V 2 TO-263 Top Viw S D G 9 Ordring Information: SUM2N4-m7L-GE3 (Lad
IMH21 V CEO V EBO. 20V 12V 600mA 10k R 1. Datasheet. Outline. Parameter Tr1 and Tr2 SMT6
NPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting. Datasheet Parameter Tr1 and Tr2 SMT6 V CEO V EBO I C R 1 20V 12V 600mA 10k Outline (3) (2) (1) (4) (5) (6) IMH21 SOT-457
Safety Technique. Multi-Function Safety System SAFEMASTER M Output Module With Output Contacts BG 5912
Safty Tchniqu Multi-Function Safty Systm SAFEMASTER M Output Modul With Output Contacts BG 5912 0247388 According to - Prformanc Lvl (PL) and catgory 4 to EN ISO 13849-1: 2008 - SIL Claimd Lvl (SIL CL)
Bi-Directional N-Channel 20-V (D-S) MOSFET
Bi-Dirctional N-Channl -V (D-S) MOSFET Si9EDB PRODUCT SUMMARY V SS (V) R SS(on) (Ω) I SS (A). at V GS =.5 V 7.6 at V GS = 3.7 V 6..3 at V GS =.5 V 5.. at V GS =. V 5.5 FEATURES TrnchFET Powr MOSFET Ultra-Low
N-Channel 100 V (D-S) 175 C MOSFET
N-Channl V (D-S) 75 C MOSFET SUMN-9 PRODUCT SUMMRY V DS (V) R DS(on) (Ω) ().95 at V GS = V a FETURES TrnchFET Powr MOSFET Nw Packag with Low Thrmal Rsistanc % R g Tstd D TO-263 G G D S Top Viw Ordring
SGM Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch
GENERAL DESCRIPTION Th SGM4717 is a dual, bidirctional, singl-pol/ doubl-throw (SPDT) CMOS analog switch dsignd to oprat from a singl 1.8V to 5.5V supply. It faturs high-bandwidth (300MHz) and low on-rsistanc
LNA IN GND GND GND GND IF OUT+ IF OUT- 7. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
LOW NOISE AMPLIFIER/ RoHS Compliant & Pb-Fr Product Packag Styl: SOIC- Faturs Singl V to.v Powr Supply MHz to MHz Opration db Small Signal Gain.dB Cascadd Nois Figur.mA DC Currnt Consumption -dbm Input
HVQFN16 HVQFN (thermal enhanced very thin quad flatpack; no leads) NA (not applicable) P (plastic) MO-220 S (surface mount) Issue date
HVQFN16 packag; no lads; 16 trminals; body 3 x 3 x 8 Fbruary 2016 Packag information 1. Packag summary Tabl 1. Packag summary Trminal position cod Packag typ dscriptiv cod Packag typ industry cod Packag
ESX10-10x-DC24V-16A-E electronic circuit protector
Dscription Th plug-in typ ESX10 lctronic circuit protctor slctivly disconncts DC 2 V load circuits by rsponding fastr than th switch mod powr supply to ovrload conditions. Th manual ON/ OFF switch on th
RClamp2451ZA. Ultra Small RailClamp 1-Line, 24V ESD Protection
- RailClamp Dscription RailClamp TVS diods ar ultra low capacitanc dvics dsignd to protct snsitiv lctronics from damag or latch-up du to ESD, EFT, and EOS. Thy ar dsignd for us on high spd ports in applications
Transient Voltage Suppressors / ESD Protectors
Transint Voltag Supprssors / ES Protctors PACN04/4/44/45/46 Faturs Two, thr, four, fiv, or six transint voltag supprssors Compact SMT packag savs board spac and facilitats layout in spac-critical applications
FAN A, 1.2V Low Dropout Linear Regulator for VRM8.5. Features. Description. Applications. Typical Application.
www.fairchildsmi.com 2.7A, 1.2V Low Dropout Linar Rgulator for VRM8.5 Faturs Fast transint rspons Low dropout voltag at up to 2.7A Load rgulation: 0.05% typical Trimmd currnt limit On-chip thrmal limiting
1A Low Dropout Voltage Regulator Fixed Output, Fast Response
A Low Dropout Voltag Rgulator Fixd Output, Fast Rspons SPX3940 FEATURES % Output Accuracy SPX3940A Guarantd.5A Pak Currnt Low Quiscnt Currnt Low Dropout Voltag of 280mV at A Extrmly Tight Load and Lin
Analog Integrations Corporation 4F, 9 Industry E. 9th Rd, Science-Based Industrial Park, Hsinchu, Taiwan DS-385B
Adjustabl Micropowr Voltag Rfrnc FEATURES Adjustabl from.v to.v. Oprating urrnt from µa to ma. Low Tmpratur officint. % and % Initial Tolranc. Low Dynamic Impdanc. APPLIATIONS Portabl, BattryPowrd Equipmnt.
Switches- and Indicators. Switches Unlimited Contact: Phone: * Fax:
Switchs- and Indicators Switchs Unlimitd Contact: sals@switchsunlimitd.com Phon: 800-221-0487 * Fax: 718-672-6370 www.switchsunlimitd.com Contnts Dscription... 3 Product Assmbly... 4 PCB Pushbuttons...
Package: H: TO-252 P: TO-220 S: TO-263. Output Voltage : Blank = Adj 12 = 1.2V 15 = 1.5V 18 = 1.8V 25 = 2.5V 33 = 3.3V 50 = 5.0V 3.3V/3A.
Faturs Advancd Powr 3-Trminal ustabl or Fixd.V,.5V,.8V,.5V, 3.3V or 5.V Output Maximum Dropout.4V at Full Load Currnt Fast Transint Rspons Built-in Thrmal Shutdown Output Currnt Limiting Good Nois Rjction
VIN AIC C OUT GND C IN. Low Dropout Linear Regulator
00m ow ropout inar Rgulator FTURS ow ropout Voltag of 470mV at 00m Output Currnt (.0V Output Vrsion). Guarantd 00m Output Currnt. ow Ground Currnt at 55µ. 2% ccuracy Output Voltag of 1.8V/ 2.0V /2.5V /2.7V/.0V/.V/.5V/.7V/.8V/
7LF LF LF TT LF LF LF6
Timrs Simns AG 2008 7F6, 5TT1 3 timrs for buildings Ovrviw Stairwll lighting is part of th standard quipmnt of a building. This is rquird in DI 180152 "Elctrical systms in rsidntial buildings; minimum
SPX mA Low Drop Out Voltage Regulator with Shutdown FEATURES Output 3.3V, 5.0V, at 400mA Output Very Low Quiescent Current Low Dropout Voltage
400mA Low Drop Out Voltag Rgulator with Shutdown FEATURES Output 3.3V, 5.0V, at 400mA Output Vry Low Quiscnt Currnt Low Dropout Voltag Extrmly Tight Load and Lin Rgulation Vry Low Tmpratur Cofficint Currnt
N-Channel 40-V (D-S) MOSFET
Si4456Y N-Channl 4-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.).38 at V GS = V 33 4 37.5 nc.45 at V GS = 4.5 V 3 FEATURES Halogn-fr According to IEC 6249-2-2 Availabl TrnchFET Gn
Product is End of Life FEATURES BENEFITS NC 4 COM 4 COM 1 NC 1
Product is End of Lif Low-Voltag, Low R ON, ual PT nalog Switch G3015 ESCRIPTION Th G3015 is a dual doubl-pol/doubl-throw monolithic CMOS analog switch dsignd for high prformanc switching of analog signals.
HSMS-2823 RF mixer/detector diode
Products > RF Is/iscrts > Schottky iods > Surfac Mount > HSMS-282 HSMS-282 RF mixr/dtctor diod scription ifcycl status: ctiv Faturs Th HSMS-282x family of schottky diods ar th bst all-round choic for most
The entire devices are built in housings that are protected against liquids and dust without need to be installed in hazloc certified cabinets.
Cod for typ of protction Typ cod -TX- altrn. altrn. II 3 (2/3) G Ex d ia mb na [ Gb] [ic] IIC T4 Gc II 3 (2/3) G Ex db b ia mb na [ ic] IIC T4 II 3 (2/3) D Ex ia tc [ Db] [ic] IIIC T80 C Dc IP66 II 3 (2/3)
Logic Design 2013/9/26. Outline. Implementation Technology. Transistor as a Switch. Transistor as a Switch. Transistor as a Switch
3/9/6 Logic Dsign Implmntation Tchnology Outlin Implmntation o logic gats using transistors Programmabl logic dvics Compl Programmabl Logic Dvics (CPLD) Fild Programmabl Gat Arrays () Dynamic opration
AOZ8904 Ultra-Low Capacitance TVS Diode Array
Ultra-Low Capacitanc TS Diod Array Gnral Dscription Th AOZ8904 is a transint voltag supprssor array dsignd to protct high spd data lins from lctro Static Discharg (SD) and lightning. This dvic incorporats
Taping code. Reel size (mm) 2SC5824 MPT T ,000 UP
NPN 3.0A 60 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 60 I C 3A Base Collector Emitter Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low CE(sat)
QST3 V CEO -30V I C -5A. Datasheet. PNP -5A -30V Middle Power Transistor. Outline
PNP -5A -30V Middle Power Transistor Datasheet Features Parameter 1) Suitable for Middle Power Driver 2) Complementary NPN Types : QSX2 3) Low V CE(sat) V CE(sat) = -0.25V(Max.) (I C /I B = -2A / -40mA)
New Designs. Not Recommended for 2SC5001 V CEO I C 20V 10A. Datasheet. NPN 10A 20V Middle Power Transistor. Outline Parameter Value CPT3
NPN 10A 20V Middle Power Transistor Datasheet Outline Parameter Value CPT3 V CEO I C Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low V CE(sat) V CE(sat) = 0.25V(Max.)
2SB1275 V CEO -160V I C -1.5A. Datasheet. PNP -1.5A -160V Middle Power Transistor. Outline Parameter Value CPT3. Features
PNP -1.5A -160V Middle Power Transistor Datasheet Outline Parameter Value CPT3 Collector Features V CEO -160V I C -1.5A 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High
New Designs. Not Recommended for 2SB1698 V CEO -30V -1.5A I C. Datasheet. PNP -1.5A -30V Middle Power Transistor. Outline
PNP -1.5A -30V Middle Power Transistor Datasheet Features Parameter Value 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2662 3) Low V CE(sat) V CE(sat) = -0.37V(Max.) (I C /I B =
2SA1834 V CEO -20V I C -10A. Datasheet. PNP -10A -20V Middle Power Transistor. Outline. Parameter Value CPT3. Features
PNP -10A -20V Middle Power Transistor Datasheet Outline Features Parameter Value CPT3 V CEO -20V I C -10A 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5001 3) Low V CE(sat) V CE(sat)
2.5V Drive Nch + Nch MOSFET
2.5V Drive Nch + Nch MOSFET UM6K3N Structure Silicon N-channel MOSFET Features ) High speed switing. 2) Small package(umt6). 3) Low voltage drive(2.5v drive). Dimensions (Unit : mm) UMT6 (SC-88)
3A High Current, Low Dropout Voltage Regulator Adjustable, Fast Response Time
SPX29302 3 High Currnt, ow Dropout Voltag Rgulator djustabl, Fast Rspons Tim FTURS djustabl Output Down To 1.25V 1% Output ccuracy Output Currnt of 3 ow Dropout Voltag of 370mV @ 3 xtrmly Fast Transint
P-Channel 150-V (D-S) MOSFET
Si3437V P-Channl 50-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) - 50 0.75 at V GS = - 0 V -.4 0.79 at V GS = - 6 V -.3 TSOP-6 Top Viw 8 nc FEATURES Halogn-fr According to IEC 649--
FPT Applications. Features
FPT 85 Flush Mmbran Transmittr Swiss basd Trafag is a lading intrnational supplir of high quality snsors and monitoring instrumnts for masurmnt of and tmpratur. Th Flush Mmbran Transmittr FPT is basd on
Outline CPT3. Base. Taping code. Reel size (mm) 2SC5103 CPT TL ,500 C5103
NPN 5A 60 Middle Power Transistor Datasheet Outline Parameter CEO I C alue 60 5A CPT3 Base Collector Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low CE(sat) CE(sat)
Outline SOP8 (SC-87) Inner circuit. Switching Power Supply Tape width (mm) 12 Type Basic ordering unit (pcs) 2,500
Nch 6V.63A Power MOSFET ZDS2N6 Datasheet V DSS 6V R DS(on) (Max.) 5.W I D.63A P D 2.W Outline SOP8 (SC-87) () (2) (3) (4) (8) (7) (6) (5) Features ) Low on-resistance. 2) Fast switching speed. 3) Gate-source
Medium Power Transistor ( 32V, 1A)
Medium Power Transistor ( 32, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon
Outline. Inner circuit. Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
Nch 2V 2mA Small Signal MOSFET Datasheet Outline V DSS 2V EMT3F R DS(on) (Max.) 1.2W (3) I D P D 2mA 15mW (1) (2) Features 1) Low voltage drive(1.2v) makes this Inner circuit device ideal for partable
Taping code. Reel size (mm) 2SCR512P MPT T ,000 NB
2SCR52P NPN 2.0A 30 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 30 I C 2.0A Base Collector Emitter Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR52P
SIOV metal oxide varistors
SIOV mtal oxid varistors Taping, packaging and lad configuration (for ladd varistors) Dat: Dcmbr 2007 Data Sht EPCOS AG 2008. Rproduction, publication and dissmination of this publication, nclosurs hrto
Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC
2SCR53P NPN.0A 50 Middle Power Transistor Datasheet Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR53P 3) Low CE(sat) CE(sat) =0.35(Max.) (I C /I B =500mA/25mA) 4) Lead Free/RoHS
P-Channel 200-V (D-S) MOSFET
Si79DN P-Channl -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -.5 at V GS = - V -.8.6 nc. at V GS = - 6.V -.6 PowrPAK -8 FEATURES Halogn-fr According to IEC 69-- Availabl TrnchFET
1.2V Drive Nch MOSFET
.2V Drive Nch MOSFET RUE002N05 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) EMT3 (SC-75A) Features ) High speed switing. 2) Small package(emt3). 3)Ultra low voltage drive(.2v drive).
New Designs. Not Recommended for. 1.2V Drive Nch MOSFET RUE002N Rev.B 1/5. Structure. Dimensions (Unit : mm) Silicon N-channel MOSFET
.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET EMT3 Features ) High speed switing. 2) Small package(emt3). 3)Ultra low voltage drive(.2v drive). Application Switching
3A High Current, Low Dropout Voltage Regulator
SPX29300/01/02/03 3 High Currnt, Low Dropout Voltag Rgulator djustabl & Fixd Output, Fast Rspons Tim FETURES djustabl Output Down To 1.25V 1% Output ccuracy Output Currnt of 3 Low Dropout Voltag of 450mV
Outline. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
Pch -3V -3A Power MOSFET Datasheet Outline V DSS -3V TSMT6 R DS(on) (Max.) 75mW I D -3A P D.25W () (2) (3) (6) (5) (4) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface
Outline. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
Pch -3V -4A Power MOSFET Datasheet Outline V DSS -3V TSST8 R DS(on) (Max.) 45mW I D -4A P D.25W () (2) (8) (7) (6) (3) (4) (5) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small
R6015ANX 600V. R DS(on) (Max.) 15A 50W. Nch 600V 15A Power MOSFET. Datasheet. Outline. Features. Inner circuit 1) Low on-resistance.
Nch 6V 5 Power MOSFET Datasheet V DSS R DS(on) (Max.) 6V.3Ω Outline TO22FM I D P D 5 5W () (2) (3) Features Inner circuit ) Low onresistance. 2) Fast switching speed. 3) Gatesource voltage (V GSS ) guaranteed
PTF GOLDMOS Field Effect Transistor 12 Watts, 1.99 GHz
查询 PTF41 供应商 GOLDMOS Fild Effct Transistor Watts, 1.99 GHz Dscription Th is a watt GOLDMOS FET intndd for larg signal amplifir applications from 1. to 2. GHz. It oprats at 38% fficincy with db minimum
N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options. 14-Lead QFN* 5.00x5.00mm body 1.00mm height (max) 1.
Suprtx inc. Faturs Vry low gat thrshold voltag Dsignd to b sourc-drivn Low switching losss Low ffctiv output capacitanc Dsignd for inductiv loads Wll matchd for low scond harmonic whn drivn by Suprtx M30
SGM8621/2/3/4 250µA, 3MHz, Rail-to-Rail I/O CMOS Operational Amplifiers
PRODUCT DESCRIPTION Th SGM86(singl), SGM86(dual), SGM86(singl with shutdown) and SGM864(quad) ar low nois, low voltag, and low powr oprational amplifirs, that can b dsignd into a wid rang of applications.
New Designs. Not Recommended for R6008FNX 600V 0.95W 8A 50W. R DS(on) (Max.) Nch 600V 8A Power MOSFET. Datasheet. Outline. Inner circuit.
Nch 6V 8 Power MOSFET Datasheet Features V DSS R DS(on) (Max.) I D P D ) Low onresistance. ) Fast switching speed. bsolute maximum ratings(t a = 5 C) Drain Source voltage Continuous drain current drain
New Designs. Not Recommended for. 2.5V Drive Nch MOSFET RSE002N Rev.A 1/5. Structure Silicon N-channel MOSFET. Dimensions (Unit : mm)
2.5V Drive Nch MOSFET RSE002N06 Structure Silicon N-channel MOSFET Features ) High speed switing. 2) Small package(emt3). 3) Low voltage drive(2.5v drive). Application Switching Packaging specifications
QUAD 5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER
DVNCD INR DVICS, INC. /B QUD 5V RI-TO-RI PRCISION OPRTION MPIFIR GNR DSCRIPTION Th /B/ is a quad monolithic prcision CMOS rail-to-rail oprational amplifir intndd for a road rang of analog applications
IMP528 IMP528. High-Volt 220 V PP Driv. ive. Key Features. Applications. Block Diagram
POWER POWER MANAGEMENT MANAGEMENT High-Volt oltag E amp p Driv ivr 220 V PP Driv iv Th is an Elctroluminscnt (E) lamp drivr with th four E lamp driving functions on-chip. Ths ar th switch-mod powr supply,
Outline TSMT8. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
RQE7RP Pch -3V -7A Power MOSFET Datasheet V DSS -3V R DS(on) (Max.) 7mW I D -7A P D.5W Outline TSMT8 () (2) (3) (4) (8) (7) (6) (5) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3)
4V Drive Nch MOSFET RSD050N10
4V Drive Nch MOSFET RSD5N Structure Silicon N-channel MOSFET Dimensions (Unit : mm) Features ) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. Applications
Outline TO-220FM. Inner circuit. Switching Power Supply Tape width (mm) - Type Basic ordering unit (pcs) 500. Parameter Symbol Value Unit P D 40 W
Nch 5V 5A Power MOSFET Datasheet Features V DSS 5V R DS(on) (Max.).5W I D P D ) Low onresistance. 2) Fast switching speed. 5A 4W 3) Gatesource voltage (V GSS ) guaranteed to be 3V. 4) Drive circuits can
Outline. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
QS6K2 Nch 45V A Power MOSFET Datasheet Outline V DSS 45V TSMT6 R DS(on) (Max.) 42mW I D A P D.25W () (2) (3) (6) (5) (4) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface
4V Drive Pch MOSFET RRR015P03
4V Drive Pch MOSFET Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TSMT3 Features ) Low On-resistance. 2) High power package. 3) 4V drive. (3) () (2) pplication Switching Inner circuit bbreviated
ALD810020/ALD QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB ) MOSFET ARRAY ADVANCED LINEAR DEVICES, INC. FEATURES & BENEFITS GENERAL DESCRIPTION
TM DVND INR DVIS, IN. QUD/DU SUPRPITOR UTO BNING (SB ) MOSFT RRY PD N B D D810020/D910020 GNR DSRIPTION Th D810020/D910020 ar mmrs of th D8100xx (quad) and D9100xx (dual) family of Suprcapacitor uto Balancing
ALD810023/ALD QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB ) MOSFET ARRAY ADVANCED LINEAR DEVICES, INC. GENERAL DESCRIPTION FEATURES & BENEFITS
TM DVND INR DVIS, IN. QUD/DU SUPRPITOR UTO BNING (SB ) MOSFT RRY PD N B D D810023/D910023 GNR DSRIPTION Th D810023/D910023 ar mmrs of th D8100xx (quad) and D9100xx (dual) family of Suprcapacitor uto Balancing
2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET
.5V Drive Nch MOSFET.5V Drive Pch MOSFET TT8M Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features ) Low on-state resistance. ) Low voltage
4V Drive Pch+Pch MOSFET
4V Drive Pch+Pch MOSFET SH8J62 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features ) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). pplication
SGM8631/2/3/4 470µA, 6MHz, Rail-to-Rail I/O CMOS Operational Amplifiers
PRODUCT DESCRIPTION Th SGM86(singl), SGM86(dual), SGM86(singl with shutdown) and SGM864(quad) ar low nois, low voltag, and low powr oprational amplifirs, that can b dsignd into a wid rang of applications.
Outline LPT(S) (SC-83) Inner circuit. Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit I D E AS *3 P D 30 W P D 1.
Nch 25V 5.A Power MOSFET Datasheet Outline V DSS 25V LPT(S) (2) R DS(on) (Max.) 36mW I D 5.A (SC-83) P D 3W () (3) Features ) Low on-resistance. Inner circuit 2) Fast switching speed. 3) Drive circuits
SGM721/2/3/4 970µA, 10MHz, Rail-to-Rail I/O CMOS Operational Amplifiers
PRODUCT DESCRIPTION Th SGM7 (singl), SGM7 (dual), SGM7 (singl with shutdown) and SGM74 (quad) ar low nois, low voltag, and low powr oprational amplifirs, that can b dsignd into a wid rang of applications.
PRECISION P-CHANNEL EPAD MOSFET ARRAY QUAD ZERO THRESHOLD MATCHED PAIR
TM DVNCED LINER DEVICES, INC. PRECISION P-CHNNEL EPD MOSFET RRY QUD ZERO THRESHOLD MTCHED PIR EPD E N B L E D LD37/LD37 VGS(th)=.V GENERL DESCRIPTION LD37/LD37 high prcision monolithic quad P-Channl MOSFET
Outline CPT3. Base. Taping code. Reel size (mm) 2SC5103 CPT TL ,500 C5103
NPN 5A 60V Middle Power Transistor Datasheet Outline Parameter V CEO I C Value 60V 5A CPT3 Base Collector Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low V CE(sat)
SGM8521/2/4 150kHz, 4.7µA, Rail-to-Rail I/O CMOS Operational Amplifiers
// PRODUCT DESCRIPTION Th (singl),sgm8 (dual) and SGM8 (quad) ar rail-to-rail input and output voltag fdback amplifirs offring low cost. Thy hav a wid input common-mod voltag rang and output voltag swing,
Outline TSMT3. Inner circuit. (1) Gate (2) Source (3) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE
Nch 6V 3A Power MOSFET Datasheet V DSS R DS(on) (Max.) I D P D 6V 85mW 3A W Outline TSMT3 () (2) (3) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. Inner circuit () Gate (2) Source (3)
CM431A LOW VOLTAGE ADJUSTABLE SHUNT REGULATOR
GNR SCRIPTION FTURS Th is a thr-trminal adjustal shunt voltag rgulator with spcifid thrmal staility and pin-to-pin compatil with th arlir 431 sris. Th output voltag can adjustd to any valu twn RF and 18
Power management (dual transistors)
Power management (dual transistors) EMF3 / UMF3N DTA43T and SK39 are housed independently in a EMT6 package. Application Power management circuit Dimensions (Unit : mm) Features ) Power switching circuit
Low V CE(sat) transistor (strobe flash)
Low CE(sat) transistor (strobe flash) SD8 Features ) Low CE(sat). CE(sat) = (Typ.) (IC/IB = 4A / 0.A) ) Excellent DC current gain characteristics. 3) Complements the SB4. Dimensions (Unit : mm) SD8 Structure
V OUT 3.3V. V REF =V OUT -V ADJ =1.25V (typ.) V OUT =V REF x (1+RF2/RF1)+ I ADJ x RF2 I ADJ =55µA (typ.)
5A Low Dropout Positiv Rgulator FEATURES Dropout Voltag.V at 5A Output Currnt. Fast Transint Rspons. Extrmly Tight Lin and Load Rgulation. Currnt Limiting and Thrmal Protction. Adjustabl Output Voltag
Obsolete Product(s) - Obsolete Product(s)
HIGH VOLTAG IGNITION COIL DRIVR POWR I.C. TYP V cl I cl I CC 360V A 50mA PRIMARY COIL VOLTAG INTRNALLY ST COIL CURRNT LIMIT INTRNALLY ST LOGIC LVL COMPATIBL INPUT DRIVING CURRNT QUASI PROPORTIONAL TO COLLCTOR
AP85T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
P85T3GH/J RoHS-compliant Product dvancd Powr N-CHNNEL ENHNCEMENT MODE Elctronics Corp. POWER MOSFET Low Gat Charg D BV DSS 3V Simpl Driv Rquirmnt R DS(ON) 6mΩ Fast Switching G I D 75 S Dscription Th TO-252
Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
dvancd Powr N-CHNNEL ENHNCEMENT MODE Elctronics Corp. POWER MOSFET Low Gat Charg D BV DSS 3V Simpl Driv Rquirmnt R DS(ON) 8mΩ Fast Switching I D 5 G S Dscription P5N3GH/J RoHS-compliant Product TO-252
IEEE Broadband Wireless Access Working Group <
IEEE C802.16j-07/409 Projct Titl IEEE 802.16 Broadband Wirlss Accss Working Group A Proposal for Transmission of FCH, MAP, R-FCH, R-MAP in Non-transparnt Rlay Systm with Cntralizd
Outline TSMT8. Road SW Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000. Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit P D
Pch -2V -7A Power MOSFET Datasheet V DSS -2V R DS(on) (Max.) 4mW I D -7A P D.5W Outline TSMT8 () (2) (3) (4) (8) (7) (6) (5) Features Inner circuit ) Low on - resistance. 2) Built-in G-S Protection Diode.
TOW EIAUDIO PAWEL
TOW EIAUDIO PAWEL 191141394363 81 65 SPECIFICATIONS * Usd With Ton Frquncy Ton Output Rcivr Squlchd Rcivr Unsqulchd Satllit Rcivrs 1950 Hz f10 Hz -20 to +11 d&n Lss than -60 d h Audio Output Output Impdanc
QUAD PRECISION MICROPOWER CMOS VOLTAGE COMPARATOR WITH DRIVER
DVNCD INR DVICS, INC. D433/D433 QUD PRCISION MICROPOWR CMOS VOTG COMPRTOR WITH DRIVR GNR DSCRIPTION Th D433/D433 is a prcision monolithic high prformanc quad voltag comparator with opn drain output uilt
New Designs. Not Recommended for. 4V Drive Nch+Nch MOSFET SH8K Rev.A 1/4. Structure Silicon N-channel MOSFET. Dimensions (Unit : mm)
4V Drive Nch+Nch MOSFET SH8K22 Sucture Silicon N-channel MOSFET Features ) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter, Inverter
4NPA. Low Frequency Interface Module for Intercom and Public Address Systems. Fig. 4NPA (L- No )
ow Frquncy Intrfac Modul for Intrcom and Public ddrss ystms Fig. ( No. 2.320) t a Glanc: ow frquncy (F) control of thirdparty amplifirs in intrcom systms onncting call stations with lin control in public
Reflective photosensor (photoreflector)
Reflective photosensor (photoreflector) RPR-220 Applications Compact disc players Copiers Game machines Office automation equipment Outline Features 1) A plastic lens is used for high sensitivity. 2) A
Common Collector & Common Base Amplifier Circuits
xprimnt (6): ommon ollctor & as Amplification ircuit xprimnt No. (6) ommon ollctor & ommon as Amplifir ircuits Study Objctiv: (1) To comput and masur th basic charactristics of & amplification. (2) To
Photointerrupter, Small type
Photointerrupter, Small type RPI-352 Applications Printers Amusement Outline Features 1) Positioning pin enables precision mounting. 2) Gap between emitter and detector is 3.0mm. 3) Compact Dimensions
Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
dvancd Powr N-CHNNEL ENHNCEMENT MOE Elctronics Corp. POWER MOSFET Low On-rsistanc BV SS 4V Singl riv Rquirmnt R S(ON) mω Surfac Mount Packag I 32 scription dvancd Powr MOSFETs from PEC provid th dsignr
YB mA, Low Power, High PSRR LDO Regulator
scription Th is a sris of ultra-low-nois, high PSRR, and low quiscnt currnt low dropout (O) linar rgulators with 2.0% output voltag accuracy. Th rgulators achiv a low 300m dropout at 300m load currnt of