RESUME FOR JOHN OGAWA BORLAND

Transcription

1 RESUME FOR JOHN OGAWA BORLAND SUMMARY High tech semiconductor equipment industry executive with years of experience in strategic marketing, sales and technology. Led new product and technology introductions worldwide: 1) while employed at Varian Semiconductor, Genus and Applied Materials and 2) consulting for Epion, SemEquip, Nissin, Diamond Semiconductor, Accent, and Solid State Measurements. Pioneered added value new strategic applications for semiconductor processing equipment in ion implantation (high energy and high current), chemical vapor deposition (epi, selective epi, poly, WSi2 and high-k dielectrics), silicon surface ex-situ and in-situ cleaning and Ultra-Shallow Junction (USJ) metrology techniques. SELECTED ACCOMPLISHMENTS I proposed, executed and completed a 1 year study with NEC to target 45nm node p+ USJ with high dopant activation and high quality compatible with both SiON gate dielectric and high-k gate dielectrics. This was published in May 2006 and involved 11 different companies (#101 & 102). Both high temperature and low temperature diffusion-less activation techniques were examined as well as alternative boron dopant species such as molecular dopant species. Patented and created the marketing and sales strategy for the high tilt PoGI technology for process simplification and improved device performance using Varian s new single wafer high curent ion implanter. Cited in Varian s 2001 annual report as one of the most significant technical achievements for the year. Also cited that marketing the high tilt PoGI created a diferentiated strategy resulting in orders that directly increased market share. Ultimate result was creation of a new implant segment/market called high tilt, which became a lockout spec for equipment. See joint publication with TSMC, AMD, Synopsys and TIT (#82). Decoupled implant from high temperature annealing equipment, which Varian did not have and both competitors sold as a complete process module solution by missionary marketing of low temperature annealing by SPE for shallow junction formation. This has resulted in its inclusion in the 2003 ITRS technology roadmap and 65nm node target at several companies around the world. It also requires high tilt high current ion implantation for gate overlap control. See publication jointly with NEC (#76). Patented and created the marketing and sales strategy for the MeV BILLI structure for improved CMOS latch-up, process simplification and epi replacement using Genus high energy ion implanter. This is highlighted in Genus 1996 annual report and changed the company culture to the Proces Simplification Company. The combined pres release of the BILLI patent with a customer s implementation into production resulted in the company stock price to jump 25% in a single day. This symbiotic advancing customer s strategic direction marketing strategy contributed to the 6x growth of the MeV implant division. See publications jointly with AMD, Symbios Logic, NWF & LG (#62, 64, 69 & 70).

2 Performed missionary and pioneering work at Applied Materials on lower pressure epi processing to achieve higher quality epi, selective epi, poly/amorphous-si and low temperature native oxide removal created a lock-out spec against the competition using both batch and single wafer deposition equipment. This resulted in several successful key account penetrations, the implementation of SEG in 4Mb DRAM by one company in 1987 and the use of epitaxial lateral overgrowth (ELO) by ELTRAN for bonded SOI wafer manufacturing. Now all 90nm node PD/SOI implemented SEG elevated S/D too. Also, all high quality silicon wafers used in manufacturing today including SOI use a top silicon epilayer for yield improvement envisioned and reported 20 years ago. See publication (#8). See publications jointly with Intel, TI, NEC, Sony, MMI & IBM (#26, 28, 30, 33, 34, 37 & 38). PROFESSIONAL EXPERIENCE June 2003-present : J.O.B. Technologies, Aiea, HI Founder Created J.O.B. Technologies, a strategic marketing, sales and technology consulting company on positioning clients products in a strategic added value way and develop symbiotic relationships with their customers. Specializing in introduction of new products and technology world wide. Current clients include; IC companies, front-end semiconductor equipment companies and semiconductor instrument companies in the US, Canada, Europe, Taiwan and Japan. Consulting activities: Strategic marketing and sales of front end of line equipment (SST May 2004 p.53, SI Jan p.52, SST July 2005 p. 45 and SST May 2006 papers) Creating new markets for transparent substrates for imaging wireless cameras (SST Asia Pacific supplement Nov. 2004, p.s18 paper) High-k gate dielectric process development (SST web cast, July 1, 2004 and July 2005 SST paper p. 45). Developing accurate methods to characterize USJ (SST Aug p.47 paper and May 2006). Zero diffusion processing techniques to achieve USJ (Flash, Laser & SPE) invited IWJT 2006 paper. Localized strain-si technology development (SST May 2004 p.53 paper) : Varian Semiconductor Equipment Associates, Gloucester, MA Director Advanced Business Development Created implant technology leadership image of Varian to the industry through technical presentations and publications at key industry meetings, seminars and customer site. Created and executed successful account penetration strategies with sales, marketing and engineering, using the Holden sales strategy for:

3 High energy implanter at Infineon, Atmel, Wafertech and Philips/NM High current implanter at IBM and Chartered (first Varian tool in over 12 years). Created new application for VIISta-80 called high tilt PoGI for lateral graded- SDE as a lockout spec against the competition. This has been implemented into production by two customers for process simplification and improved device performance. It is now on the roadmap of several others allowing symbiotic strategic account penetration and market share gains. Revived the industry focus on SPE for shallow junction formation thereby devaluing (de-couple) the importance of high temperature annealing tools, which both competitors have. SPE now on the roadmap of several others allowing symbiotic strategic account penetration and market share gains. Created new product positions resulting in 17 publications and one patent with four more patent filings. Organized Varian s first and annual technology seminar in conjunction with Semicon/West called vetch to promote technical advantage with customer testimonials. Influenced the MRS for high current and high-energy implanters. Presented vision from customer inputs where implantation going to Varian s Board of Directors included my new implanter IDEAL (in-situ dopant electrical activation and annealing) and engineering built a prototype system : Genus Inc., Sunnyvale, CA (Acquired by Varian in 1998) Vice President of Strategy Technology ( ) Created the company s new theme The Proces Simplification Company. For CVD, evaluated clustered polycide and determined it was not the lowest COO, standalone was better. Got the two companies who were clustering on the competitor s equipment to de-cluster the process so we could compete for future business and convinced others not to pursue clustering at all. Press release of MeV BILLI patent and a customer production implementation in June 1996 resulted in the stock price one-day jump of 25% from $8 to $12. Received a $25K cash award from the CEO. Created the case and successfully pushed fro the development of the MPI (multi-purpose implanter) with the president of the company to open new application space and, therefore, markets for implanter (medium and high current markets). Created new product positions, resulted in 16 publications and three patents. Director of MeV Implant Marketing ( ) Transferred from CA to MA in June 1993 to help turn around the MeV implant division. Developed the marketing organization using Holden sales training strategy, including sales and product collateral positioning around symbiotic added value focusing on advancing our customers strategic direction and grew the MeV division by 6x from 1993 to Created credible story for MeV implementation including process integration for substrate denuding and gettering in CMOS bulk and epi technology.

4 Invented and demonstrated epi replacement with hydrogen denuding and BILLI with several customers (AMD, Philips, Symbios Logic, NWF, Hyundai and LG). Created the MRS (marketing requirement statement) for the next generation Genus-1520 MeV implanter, which became the world s smalest high-energy implanter. Promoted technical advantage with customer testimonials by organizing Genus first and annual technology seminar in conjunction with Semicon/West from 1993 to Director of CVD Process Development ( ) Developed single wafer WSi2 CVD process and HF vapor selective native oxide etching : Applied Materials, Inc., Santa Clara, CA Member of Technical Staff Hired by Walt Benzing, co-founder of Applied Materials. Developed advanced epitaxial, selective epi and polysilicon deposition processing and applications to CMOS, bipolar and BiCMOS devices, including latch-up analysis, gettering optimization, silicon interface cleaning and control. The SEG work led to IBM s use of SEG elevated S/D for the 4Mb DRAM in 1987 and ELTRANS bonded SOI wafer formation technique being used today in Japan. Developed single wafer and batch tool designs focused on lower pressure operation, which competitors could not do. Promoted technical advantage with customer testimonials by organizing Applied s first and annual technology seminar in conjunction with the IEDM meetings from Created new product applications resulting in 48 publications and one patent. Received Employee of the Quarter Award in 1996 and Outstanding Team Achievement Award in : National Semiconductor Corp., Sunnyvale, CA Process Engineer Developed the front end of line process for the VHSIC 1.25um CMOS including starting wafer evaluation bulk-vs.-epi, retrograde n-well designs for latch-up immunity and gettering for gate oxide integrity. This produced three publications. 1980: NTT LABS, Tokyo, Japan Visiting Materials Scientist Researched InP molecular beam epitaxy for laser optical communications under Prof. Harry Gatos. Became M.S. thesis and one publication. 1979: Hughes Research Labs, Malibu, CA Summer Student Researcher Researched InP liquid phase epitaxial growth for satellite solar cell applications under Prof. Harry Gatos. Became B.S. thesis.

5 1978: NASA Marshall Space Flight Center, Huntsville, AL Summer Student Researcher Researched HgCdTe crystal growth for Space Shuttle experiments under Prof. August Witt. 1977: MIT Ocean Engineering Department Sea Grant Research Award Designed and built a deep ocean current measuring and recording instrument 1975: Chaminade College of Honolulu National Science Foundation Student Summer Training Program Award Collected and studied the venom from the long black spined sea urchin Echinothrix diadema in Hawaii EDUCATION M.S. (1981) and B.S. (1980), Materials Science and Engineering, MIT, Cambridge, MA PROFESSIONAL MEMBERSHIPS Senior Member of IEEE Currently Committee Member of IEEE Hawaii Section Past Committee Member of the Silicon Valley IEEE Electron Device Society Member of the Electrochemical Society Organizing Committees of CVD X (1987), XI (1989) and XII (1991), Semiconductor Silicon 1994 and 1998, ULSI Process Integration II (2001), III (2003) & IV (2005) Member of the Materials Research Society LANGUAGES Japanese COMMUNITY ACTIVITIES Town of Hamilton Boy Scout Troop Committee Chairman, Member of Eagle Scout Association FAMILY Widower with a son and daughter