MHz. The package options are ceramic/metal flange and pill package. Package Type: , PN: CGHV14250F, CGHV14250P
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1 CGHV W, MHz, GaN HEMT for L-Band Radar Systems Cree s CGHV1425 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV1425 ideal for GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 9 through 18 MHz. The package options are ceramic/metal flange and pill package. Package Type: 44162, PN: CGHV1425F, CGHV1425P Typical Performance Over GHz (T C = 25 C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power W db % Note: Measured in the CGHV1425-AMP amplifier circuit, under 5 μs pulse width, 1% duty cycle, P IN = 37 dbm. Features Rev 1.1 December 215 Reference design amplifier GHz Operation FET Tuning range UHF through 18 MHz 33 W Typical Output Power 18 db Power 77% Typical <.3 db Pulsed Amplitude Droop Internally pre-matched on input, unmatched output Subject to change without notice. 1
2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V DSS 125 Volts 25 C Gate-to-Source Voltage V GS -1, +2 Volts 25 C Storage Temperature T STG -65, +15 C Operating Junction Temperature T J 225 C Maximum Forward Gate Current I GMAX 42 ma 25 C Maximum Drain Current 1 I DMAX 18 A 25 C Soldering Temperature 2 T S 245 C Screw Torque τ 4 in-oz CW Thermal Resistance, Junction to Case 3 R θjc.95 C/W P DISS = 167 W, 65 C Pulsed Thermal Resistance, Junction to Case 3 R θjc.57 C/W P DISS = 167 W, 5 µsec, 1%, 85 C Pulsed Thermal Resistance, Junction to Case 4 R θjc.63 C/W P DISS = 167 W, 5 µsec, 1%, 85 C Case Operating Temperature 5 T C -4, +13 C P DISS = 167 W, 5 µsec, 1% Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at 3 Measured for the CGHV1425P 4 Measured for the CGHV1425F 5 See also, the Power Dissipation De-rating Curve on Page 5 Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics 1 (T C = 25 C) Gate Threshold Voltage V GS(th) V DC V DS = 1 V, I D = 41.8 ma Gate Quiescent Voltage V GS(Q) -2.7 V DC V DS = 5 V, I D = 5 ma Saturated Drain Current 2 I DS A V DS = 6. V, V GS = 2. V Drain-Source Breakdown Voltage V BR 15 V DC V GS = -8 V, I D = 41.8 ma RF Characteristics 3 (T C = 25 C, F = 1.3 GHz unless otherwise noted) Output Power P OUT W V DD = 5 ma, P IN = 37 dbm D E % V DD = 5 ma, P IN = 37 dbm Power G P 18.2 db V DD = 5 ma, P IN = 37 dbm Pulsed Amplitude Droop D -.3 db V DD = 5 ma Output Mismatch Stress VSWR 5 : 1 Y Dynamic Characteristics No damage at all phase angles, V DD = 5 ma, P IN = 37 dbm Pulsed Input Capacitance C GS 15 pf V DS = 5 V, V gs = -8 V, f = 1 MHz Output Capacitance C DS 16 pf V DS = 5 V, V gs = -8 V, f = 1 MHz Feedback Capacitance C GD 1.35 pf V DS = 5 V, V gs = -8 V, f = 1 MHz Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV1425-AMP. Pulse Width = 5 μs, Duty Cycle = 1%. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 2 CGHV1425 Rev 1.1
3 Typical Performance Figure 1. - CGHV1425 Typical Sparameters Tcase = 25 C V DD = 5 ma Mag gnitude (db) S(2,1) S(1,1) S(2,2) Frequency (GHz) Figure 2. - CGHV1425 Typical RF Results V DD = 5 ma, P IN = 37 dbm Tcase = 25 C, Pulse Width = 5 µs, Duty Cycle = 1 % Outpu Power (W) Output Power Output Power Output Power rain Efficiency (%) (db) & Dr Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 3 CGHV1425 Rev 1.1
4 Typical Performance 4 35 Figure 3. - CGHV1425 Typical RF Results V DD = 5 ma, P IN = 37 dbm Tcase = 85 C, Pulse Width = 5 µs, Duty Cycle = 1 % 8 7 Outp put Power (W) Output Power Output Power (db) & (%) Frequency (GHz) Figure 4. - CGHV1425 CW RF Results V DD = 5 ma, P IN = 37 dbm, Tcase = 65 C Outpu Power (W) 25 5 Output Power Pout 1 Drain Eff Frequency (GHz) (db) and (%) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 4 CGHV1425 Rev 1.1
5 Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load j j j j j j j j j j j j j j Note 1. V DD = 5 ma in the package Note 2. Optimized for power gain, P SAT and Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability CGHV1425F Power Dissipation De-rating Curve Figure 4. - CGHV1425 Transient Power Dissipation De-Rating Curve Pill - 5 µs 1% 14 Power Dissipation (W) Flange - CW Note 1 4 Flange - 5 us 1 % Pill - 5 us 1 % 2 Flange - 1 ms - 2 % Pill - 1 ms - 2 % Maximum Case Temperature ( C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 5 CGHV1425 Rev 1.1
6 CGHV1425-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 63, 1%, 562 OHMS 1 R2 RES, 5.1 OHM, +/-1%, 1/16W, 63 1 R3 RES, 1/16W, 63, 1%, 47 OHMS 1 L1 INDUCTOR, CHIP, 6.8 nh, 63 SMT 1 C1, C23 CAP, 27pF, +/- 5%, 25V, 85, ATC 6F 2 C2 CAP, 2.pF, +/-.1pF, 63, ATC 1 C3, C4 CAP,.5pF, +/-.5pF, 85, ATC 6F 2 C5,C6 CAP, 1.pF, +/-.5 pf, 85, ATC 6F 2 C7,C8,C9,C1 CAP, 3.pF, +/-.1pF, 25V, 85, ATC 6F 4 C11,C24 CAP, 47pF,+/-5%, 25V, 85, ATC 6F 2 C12,C25 CAP, 1pF, +/-5%, 25V, 85, ATC 6F 2 C13,C26 CAP, 33PF, 85,1V, X7R 2 C14 CAP 1uF 16V TANTALUM 1 C15,C16,C17,C18 CAP, 3.9pF, +/-.1pF, 25V, 85, ATC 6F 4 C19,C2 CAP, 1.2pF, +/-.5pF, 85, ATC 6F 2 C27 CAP, 1.UF, 1V, 1%, X7R, C28 CAP, 33 UF, +/-2%, 1V, ELECTROLYTIC 1 J1,J2 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER RT>PLZ.1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE,18 AWG, PCB, RO435,.2 MIL THK, CGHV1425, GHZ 1 Q1 CGHV CGHV1425-AMP Demonstration Amplifier Circuit Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 6 CGHV1425 Rev 1.1
7 CGHV1425-AMP Demonstration Amplifier Circuit Outline CGHV1425-AMP Demonstration Amplifier Circuit Schematic Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 7 CGHV1425 Rev 1.1
8 Product Dimensions CGHV1425F (Package Type 44162) Product Dimensions CGHV1425P (Package Type 44161) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 8 CGHV1425 Rev 1.1
9 Part Number System CGHV1425F Type Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Value Units Upper Frequency GHz Power Output 25 W Type F = Flanged P = Package - Table 1. Note 1 : Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 1. GHz 2H = 27. GHz Table 2. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 9 CGHV1425 Rev 1.1
10 Product Ordering Information Order Number Description Unit of Measure Image CGHV1425F GaN HEMT Each CGHV1425P GaN HEMT Each CGHV1425-TB Test board without GaN HEMT Each CGHV1425P-AMP Test board with GaN HEMT installed Each CGHV1425F-AMP Test board with GaN HEMT installed Each Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 1 CGHV1425 Rev 1.1
11 Disclaimer Specifications are subject to change without notice. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Sarah Miller Marketing Cree, RF Components Ryan Baker Marketing & Sales Cree, RF Components Tom Dekker Sales Director Cree, RF Components Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 11 CGHV1425 Rev 1.1
MHz. The package options are ceramic/metal flange and pill package. Package Type: , PN: CGHV14250F, CGHV14250P
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g26171fa-gr1a GTVA26171FA Thermally-Enhanced High Power RF GaN on SiC HEMT 17 W, 5 V, 26 269 MHz Description The GTVA26171FA is a 17-watt (P 3dB ) GaN on SiC high electron mobility transistor (HEMT) for
More informationGain: 960 MHz Gain: 1030 MHz Gain: 1090 MHz Gain: 1150 MHz Gain: 1215 MHz Eff: 960 MHz Eff: 1030 MHz Eff: 1090 MHz Eff: 1150 MHz Eff: 1215 MHz
g107001efc-gr3 Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 1215 MHz Description The is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz
More informationEfficiency (%) gtra364002fc_g1. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF GaN on SiC HEMT 0 W, 48 V, 30 30 MHz Description The is a 0-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular
More informationCCharacteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR 30 dbc. Output 0.01% CCDF OPAR 7 db
Advance GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 3600 MHz Description The GTRA364002FC is a 400-watt (P SAT ) GaN on SiC high electron mobility transistor (HEMT)
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR 7 7.
Thermally-Enhanced High Power RF GaN on SiC HEMT W, 48 V, 34 36 MHz Description The is a -watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power
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Gallium Nitride 28V 25W, RF Power Transistor Description The NME6003H is a 25W, unmatched GaN HEMT, designed for multiple applications with frequencies up to 6GHz. NME6003H There is no guarantee of performance
More informationInnogration (Suzhou) Co., Ltd.
Gallium Nitride 28V 50W, RF Power Transistor Description The GTAH58050GX is a 50W internally matched, GaN HEMT, designed from 5 to 6GHz, especially point-to-point communication, broadband wireless access,
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
GTRA36282FC Thermally-Enhanced High Power RF GaN on SiC HEMT 28 W, 48 V, 34 36 MHz Description The GTRA36282FC is a 28-watt ( ) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard
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18W, 12.5V High Power RF LDMOS FETs Description The MR2003C is a 18-watt, Push-Pull configuration, unmatched LDMOS FETs, designed for ISM and Mobile radio applications with frequencies under 2GHz. It can
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KX105 15 W, 6.0 GHz, GaN HEMT Transistor DESCRIPTION The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface-Mount Technology (SMT) package for high reliability
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g126001efc-gr1 Thermally-Enhanced High Power RF an on SiC HEMT 600 W, 50 V, 10 1400 MHz Description The TVA126001EC and TVA126001FC are 600-watt an on SiC high electron mobility transistors (HEMT) for
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25W Power Packaged Transistor GaN HEMT on SiC Description The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety
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Gain (db), Pout (dbm) & PAE (%) Id (A) Description 40W Power Packaged Transistor The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband
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c271m-gr1.3 High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27 MHz.
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24W, 12.5V High Power RF LDMOS FETs Description The MR2006C is a 24-watt, Push-Pull configuration, unmatched LDMOS FETs, designed for ISM and Mobile radio applications with frequencies under 2GHz. It can
More informationDrain Efficiency (%) b092707fh-gr1a. Characteristic Symbol Min Typ Max Unit
b9277fh-gr1a PTFB9277FH Thermally-Enhanced High Power RF LDMOS FET 27 W, 28 V, 925 96 MHz Description The PTFB9277FH is a 27-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications
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High Power RF LDMOS Field Effect Transistor W, 7 MHz Description The is a -watt LDMOS FET designed for class AB operation in cellular amplifiers covering the to 7 MHz frequency band. Features include high
More informationDrain Efficiency (%) 10 a120501ea_g1-1. Characteristic Symbol Min Typ Max Unit. Return Loss IRL 10 7 db
PTVA1201EA Thermally-Enhanced High Power RF LDMOS FET W, V, 1200 10 MHz Description The PTVA1201EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 10 MHz frequency band. Features
More informationnot recommended for new design Efficiency (%) Characteristic Symbol Min Typ Max Unit Intermodulation Distortion IMD dbc
Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 1880 MHz Description The is a 170-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications. Features include
More informationPTFB193404F. Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, MHz. Description. Features. RF Characteristics
PTFB9404F Thermally-Enhanced High Power RF LDMOS FET 40 W, 0 V, 90 990 MHz Description The PTFB9404F is a 40 watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More informationEfficiency (%) 1215 MHz 15. Characteristic Symbol Min Typ Max Unit
Thermally-Enhanced High Power RF LDMOS FET 0 W, 50 V, 960 1215 MHz Description The PTVA1001EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features
More informationCharacteristic Symbol Min Typ Max Unit. Intermodulation Distortion IMD 35 dbc All published data at T CASE = 25 C unless otherwise indicated
PTFB950FL Thermally-Enhanced High Power RF LDMOS FET 40 W, 90 990 MHz Description The PTFB950FL is a 40-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 90
More informationPTFB211503FL. Thermally-Enhanced High Power RF LDMOS FET 150 W, MHz. Description. Features. RF Characteristics
PTFB50FL Thermally-Enhanced High Power RF LDMOS FET 50 W, 0 70 MHz Description The PTFB50FL is a thermally-enhanced, 50-watt, LDMOS FET designed for cellular power amplifier applications in the 0 to 70
More informationra097008nb-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR
ra097008nb-gr1a Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 9 960 MHz Description The is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 18 W, 28 V, 9 96 MHz Description The PTFB9182FC LDMOS FET is designed for use in power amplifier applications in the 9 MHz to 96 MHz frequency band. Features
More informationDrain Efficiency (%) 1300 MHz 1400 MHz 15. Characteristic Symbol Min Typ Max Unit
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to frequency band. Features include high
More informationEfficiency (%) c241002fc-gr1. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
c2412fc-gr1 Thermally-Enhanced High Power RF LDMOS FET 1 W, 28 V, 23 24 MHz Description The is a 1-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power amplifi er
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700W, 50V High Power RF LDMOS FETs Description The MQ1271VP is a 700-watt, high performance, internally matched LDMOS FET, designed for multiple applications with frequencies 960 to 1215MHz. It is featured
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 8 W, 48 V, 746 960 MHz Description The PTRA094252FC is a 8-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 746
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48, 755 805 MHz Description The is a 370-watt ( ) LDMOS FET manufactured with Wolfspeed's 48- LDMOS process. It is designed for use in multi-standard cellular
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750W, 50V High Power RF LDMOS FETs Description The MQ1470VP is a 750-watt, high performance, internally matched LDMOS FET, designed for L band pulse application with frequencies 1.2 to 1.4GHz full band
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 2 W, 48, 746 821 MHz Description The PTA0827NF is a 2-watt LDMOS FET manufactured with Wolfspeed's 48- LDMOS process. It is designed for use in multi-standard
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR
Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 805 MHz Description The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More informationELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800
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Thermally-Enhanced High Power RF LDMOS FETs 250 W, 50 V, 470 806 MHz Description The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806
More informationInnogration (Suzhou) Co., Ltd.
3400-3600MHz, 40W, 28V RF LDMOS FETs Description The is a 40-watt, internally-matched LDMOS FETs, designed for cellular application with frequencies from 3400 to 3600MHz. It can biased at class AB or Class
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
PXAC332FV Thermally-Enhanced High Power RF LDMOS FET 33 W, 28 V, 188 25 MHz Description The PXAC332FV is a 33-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power
More informationnot recommended for new design
c262808fv-gr1 Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 26 2690 MHz Description The is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
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Features GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu) RoHS* Compliant +50V Typical Operation
More informationEfficiency (%) c261402fc_gr1. Adjacent Channel Power Ratio ACPR dbc All published data at T CASE = 25 C unless otherwise indicated
c26142fc_gr1 Thermally-Enhanced High Power RF LDMOS FET 14 W, 28 V, 26 269 MHz Description The is a 14-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 26
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S-Band Radar Transistor IGN2735M250 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the
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RF Power Field Effect Transistor LDMOS, 8 17, 15W, 26V Features Designed for broadband commercial applications up to 1.7GHz High, High Efficiency and High Linearity Typical P1dB performance at 96, 26Vdc,
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Gain (db), Pout (dbm) & PAE (%) Drain Current (A) CHK15A-QIA Description The CHK15A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband
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7MHz-27MHz, W, 28V RF Power LDMOS FETs Description The ITCH225E2 is a -watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 7MHz to 27 MHz ITCH225E2
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c271m-2.1-gr1c High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27
More informationInnogration (Suzhou) Co., Ltd.
2400-2500MHz, 350W, High Power RF LDMOS FETs Description The ITCH25350D4 is a 350-watt, internally matched LDMOS FETs, designed for Multiple use especially RF Energy application including cooking, heating
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Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 8 MHz Description The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 790
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GENERAL DESCRIPTION The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity
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Features GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260 C Reflow Compatible +50 V Typical Operation
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700W, 50V High Power RF LDMOS FETs Description The MQ1270VP is a 700-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 960 to 1215MHz. It is featured
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