V DSS R DS(on) max Qg (typ.) 40V GS = 10V 33nC
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1 pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated C-C Converters l Synchronous Fet for Non-Isolated C-C Converters l Lead-Free Benefits l Very Low R S(on) at 4.5V V GS l Low Gate Charge l Fully Characterized valanche Voltage and Current HEXFET Power MOSFET V SS R S(on) max Qg (typ.) 40V 5.0m:@V GS = 0V 33nC 8 S S S G Top View SO-8 Base Part Number IRF7842PbF Package Type SO-8 Standard Pack Form Quantity Orderable Part Number Tube/Bulk 95 IRF7842PbF Tape and Reel 4000 IRF7842TRPbF bsolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 40 V V GS Gate-to-Source Voltage ± 20 T = 25 C Continuous rain Current, V 0V 8 T = 70 C Continuous rain Current, V 0V 4 I M Pulsed rain Current c 40 = 25 C Power issipation f 2.5 W = 70 C Power issipation f.6 Linear erating Factor 0.02 W/ C T J Operating Junction and -55 to 50 C Storage Temperature Range T STG Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-rain Lead g 20 C/W R θj Junction-to-mbient fg 50 Notes through are on page International Rectifier Submit atasheet Feedback July 8, 204
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS rain-to-source Breakdown Voltage 40 V V GS = 0V, I = 250μ ΔΒV SS /ΔT J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance mω V GS = 0V, I = 7 e V GS = 4.5V, I = 4 e V GS(th) Gate Threshold Voltage V V S = V GS, I = 250μ ΔV GS(th) Gate Threshold Voltage Coefficient mv/ C I SS rain-to-source Leakage Current.0 μ V S = 32V, V GS = 0V 50 V S = 32V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 00 n V GS = 20V Gate-to-Source Reverse Leakage -00 V GS = -20V gfs Forward Transconductance 8 S V S = 20V, I = 4 Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 9.6 V S = 20V Q gs2 Post-Vth Gate-to-Source Charge 2.8 nc V GS = 4.5V Q gd Gate-to-rain Charge 0 I = 4 Q godr Gate Charge Overdrive 0.6 Q sw Switch Charge (Q gs2 Q gd ) 2.8 Q oss Output Charge 8 nc V S = 6V, V GS = 0V R G Gate Resistance Ω t d(on) Turn-On elay Time 4 V = 20V, V GS = 4.5V e t r Rise Time 2 I = 4 t d(off) Turn-Off elay Time 2 ns Clamped Inductive Load t f Fall Time 5.0 C iss Input Capacitance 4500 V GS = 0V C oss Output Capacitance 680 pf V S = 20V C rss Reverse Transfer Capacitance 30 ƒ =.0MHz valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy d 50 mj I R valanche Current c 4 iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 3. MOSFET symbol (Body iode) showing the I SM Pulsed Source Current 40 integral reverse (Body iode)c p-n junction diode. V S iode Forward Voltage.0 V T J = 25 C, I S = 4, V GS = 0V e t rr Reverse Recovery Time ns T J = 25 C, I F = 4, V = 20V Q rr Reverse Recovery Charge 7 nc di/dt = 00/μs e International Rectifier Submit atasheet Feedback July 8, 204
3 I, rain-to-source Current (Α) R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current () I, rain-to-source Current () IRF7842PbF VGS TOP 0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V BOTTOM 2.5V VGS TOP 0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V BOTTOM 2.5V V 2.5V 0. 60μs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) 60μs PULSE WITH Tj = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I = 8 V GS = 0V T J = 50 C.5.0 T J = 25 C.0 V S = 25V 60μs PULSE WITH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature International Rectifier Submit atasheet Feedback July 8, 204
4 C, Capacitance (pf) I S, Reverse rain Current () I, rain-to-source Current () V GS, Gate-to-Source Voltage (V) IRF7842PbF V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 2 0 I = 4 V S = 30V VS= 20V Ciss Coss 4 Crss V S, rain-to-source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERTION IN THIS RE LIMITE BY R S (on) 00.0 T J = 50 C T.0 J = 25 C V GS = 0V V S, Source-to-rain Voltage (V) 0. Tc = 25 C Tj = 50 C Single Pulse msec 0msec V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea International Rectifier Submit atasheet Feedback July 8, 204
5 I, rain Current () V GS(th) Gate threshold Voltage (V) IRF7842PbF I = 250μ T J, Junction Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum rain Current Vs. Case Temperature Fig 0. Threshold Voltage Vs. Temperature Thermal Response ( Z thj ) 00 0 = SINGLE PULSE ( THERML RESPONSE ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 3 τ 2 τ 3 Ci= τi/ri Ci i/ri E-006 E t, Rectangular Pulse uration (sec) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient τ C τ Ri ( C/W) τi (sec) International Rectifier Submit atasheet Feedback July 8, 204
6 R S (on), rain-to -Source On Resistance (mω) E S, Single Pulse valanche Energy (mj) IRF7842PbF 6 2 I = I TOP BOTTOM T J = 25 C 80 4 T J = 25 C V GS, Gate-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 2. On-Resistance Vs. Gate Voltage Fig 3c. Maximum valanche Energy Vs. rain Current 5V V S L V S L RIVER V - R G 20V V GS tp.u.t IS 0.0Ω - V Fig 3a. Unclamped Inductive Test Circuit V GS Pulse Width < μs uty Factor < 0.%.U.T tp V (BR)SS Fig 4a. Switching Time Test Circuit V S 90% 0% V GS I S t d(on) t r t d(off) t f Fig 3b. Unclamped Inductive Waveforms Fig 4b. Switching Time Waveforms International Rectifier Submit atasheet Feedback July 8, 204
7 -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =0V V * R G dv/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 5. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Current Regulator Same Type as.u.t. Vds Id Vgs 50KΩ 2V.2μF.3μF.U.T. V - S Vgs(th) V GS 3m I G I Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 6. Gate Charge Test Circuit Fig 7. Gate Charge Waveform International Rectifier Submit atasheet Feedback July 8, 204
8 SO-8 Package Outline imensions are shown in millimeters (inches) E 6 6X e B H 0.25 [.00] IM INCHES MILLIMETERS MIN MX MIN MX b c E e e H K L y BS IC.27 BS IC.025 BS IC BS IC e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] NOTES:. IMENS IONING & T OLERNCING PER S ME Y4.5M CONTROLLING IMENS ION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUT LINE CONFORMS TO JEEC OUTLINE MS IMENS ION OES NOT INCLUE MOL PROTRUSIONS. MOL PROT RUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENS ION OES NOT INCLUE MOL PROTRUSIONS. MOL PROT RUSIONS NOT TO EXCEE 0.25 [.00]. 7 IME NS ION IS T HE LE NGT H OF LE FOR S OLERING T O SUBS TRT E. 8X L [.255] 3X.27 [.050] 8X c FOOTPRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking EXMPLE: T HIS IS N IRF70 (MOS FET) INTERNTIONL RECT IFIER LOGO XXXX F70 T E COE (YWW) P = E S IGNT E S L E -F RE E PROUCT (OPTIONL) Y = LS T IGIT OF T HE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER Note: For the most current drawing please refer to IR website at: International Rectifier Submit atasheet Feedback July 8, 204
9 SO-8 Tape and Reel imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Note: For the most current drawing please refer to IR website at: International Rectifier Submit atasheet Feedback July 8, 204
10 Qualification information Qualification level Moisture Sensitivity Level RoHS compliant SO-8 Cons umer (per JEEC JES47F guidelines) MS L (per JEE C J-S T-020 ) Yes Qualification standards can be found at International Rectifier s web site: pplicable version of JEEC standard at the time of product release Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.5mH R G = 25Ω, I S = 4. ƒ Pulse width 400μs; duty cycle 2%. When mounted on inch square copper board R θ is measured at T J approximately 90 C Revision History ate 7/8/204 Comment Updated data sheet based on corporate template. dded Qual level on page0. dded ordering information on page Updated Max RG from "TB" to "2.6Ohm" on page2. IR WORL HEQURTERS: 0 N. Sepulveda Blvd., El Segundo, California 90245, US To contact International Rectifier, please visit International Rectifier Submit atasheet Feedback July 8, 204
V DSS R DS(on) max Qg 30V GS = 10V 44nC
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRF7301 PD C. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.050Ω SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings
HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 8 S l ual N-Channel Mosfet 2 7 l Surface Mount G l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
P-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
More informationV DSS R DS(on) max (mω)
Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
More informationBase part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF
IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
More informationV DSS R DS(on) max Qg 30V GS = 10V 5.4nC
PD - 96227B Applications l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes l System/load switch Benefits
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationIRFB3607PbF IRFS3607PbF IRFSL3607PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationDirect Drive at High V GS. IRF9388PbF SO8 Tube/Bulk 95 IRF9388TRPbF SO8 Tape and Reel 4000
PD 9752 IRF9388PbF HEXFET Power MOSFET V DS 3 V V GS max ±25 V R DS(on) max (@V GS = V).9 mω I D (@T A = 25 C) 2 A * SO8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Features
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Typical R S(on) (mω), atetosource Voltage (V) l RoHs Compliant l LeadFree (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core CC Converters l Low Conduction Losses l High
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
More information30V GS = 10V 48nC GS = 4.5V
l Application Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (
More informationIRF6646 DirectFET Power MOSFET
Typical R DS(on) (Ω) V GS, Gate-to-Source Voltage (V) l RoHS compliant containing no lead or bromide l Low Profile (
More informationAUTOMOTIVE GRADE. Orderable Part Number AUIRF7416Q SO-8 Tape and Reel 4000 AUIRF7416QTR
UTOMOTIVE GRE UIRF746Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
More informationIRF6706S2TRPbF IRF6706S2TR1PbF DirectFET Power MOSFET
Typical R S(on) (mω) V S, ate-to-source Voltage (V) l RoHS Compliant and Halogen Free l Low Profile (
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
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Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97228 IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.8 C/W)
PD -97538A IRFH5025PbF HEXFET Power MOSFET V DS 250 V R DS(on) max (@V GS = V) 0 mω Q g (typical) 37 nc R G (typical).6 Ω I D (@T c(bottom) = 25 C) 25 A PQFN 5X6 mm Applications Secondary Side Synchronous
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Typical R S(on) (m ) V GS, GatetoSource Voltage (V) l RoHs Compliant and Halgen Free l Low Profile (
More informationV DSS R DS(on) max Qg. 30V 3.3m: 34nC
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
HEXFET Power MOSFET P - 9576 IRF730PbF Generation V Technoogy Utra Low On-Resistance ua N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching Lead-Free escription Fifth
More informationLower Conduction Losses
PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
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l Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator pplications l P-Channel HEXFET l Low V F Schottky Rectifier l SO-8 Footprint l Lead-Free Description The FETKY TM family
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRF6608. Absolute Maximum Ratings Max. Thermal Resistance. HEXFET Power MOSFET V DSS R DS(on) max Qg. 30V GS = 10V 16nC GS = 4.
PD 94727B l pplication Specific MOSFETs l Ideal for CPU Core DCDC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
More informationAbsolute Maximum Ratings. Thermal Resistance Ratings. 1 SO-8. Top View. 100% R G Tested. Symbol Parameter Typ Max Units
Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
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P 9633 HEXFET Power MOFET V 3 V R (on) max (@V G = V) 4.6 mω Q g (typical) 32 nc I (@T A = 25 C) A 5 6 7 8 G 4 3 2 G 3mm x 3mm PQFN Applications l ystem/load switch Features and Benefits Features Benefits
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power V DSS PD - 95821 IRL8113 IRL8113S IRL8113L HEXFET Power MOSFET R DS(on) max Qg (Typ.) 30V 6.0m: 23nC Benefits l l
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationW Linear Derating Factor 0.016
HEXFET Power MOSFET l Generation V Technology l Ultra Low OnResistance 8 S l ual PChannel Mosfet 2 7 G l Surface Mount l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching
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Features Latest MOSFET silicon technology Key parameters optimized for Class-D audio amplifier applications Low R DS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for
More informationDescription. 1
dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree S S S G 2 3 IRF746QPbF 8 7 6 4 5 HEXFET Power MOSFET P 9624 V SS =
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
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