SSF6602. Main Product Characteristics. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)
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1 Main Product Characteristics D2 S1 V (BR)DSS 30V -30V D1 58mΩ@10V 100mΩ@-10V G2 R DS(on)MAX 95mΩ@4.5V 150mΩ@-4.5V G1 S2 I D 3.5A -2.7A SOT-23-6L Schematic Diagram Features and Benefits Advanced MOSFET process technology Ideal for battery operated systems, load switching, power converters and other general purpose applications Low on-resistance with low gate charge Fast switching and reverse body recovery Description The utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (T A =25 C unless otherwise specified) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current T A =25 C T A =70 C I D Pulsed Drain Current 1 I DM A Maximum Power Dissipation T A =25 C P D 1.2 W Operating Junction and Storage Temperature Range T J,T STG -55 To To +150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient 2 R θja N-Ch 104 C/W Thermal Resistance, Junction-to-Ambient 2 R θja P-Ch 104 C/W A 1/10
2 N-Channel Electrical Characteristics (T A =25 C unless otherwise specified) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS VGS=0V I D =250μA V Zero Gate Voltage Drain Current I DSS V DS = 30V,V GS =0V μa Gate-Body Leakage Current I GSS V GS =± 20V,V DS =0V - - ±100 On Characteristics 3 Gate Threshold Voltage V GS(th) V DS =VGS,I D =250μA V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =3.5A mω V GS =4.5V, I D =2A mω Forward Transconductance g FS V DS =5V,I D =3.1A S Dynamic Characteristics Input Capacitance C lss PF V DS =15V,V GS =0V, Output Capacitance C oss PF F=1.0MHz Reverse Transfer Capacitance PF Switching Characteristics C rss Turn-on Delay Time t d(on) ns Turn-on Rise Time t r V DD =15V, R L =3Ω ns Turn-Off Delay Time t d(off) V GS =10V,R GEN =6Ω ns Turn-Off Fall Time t f ns Total Gate Charge Q g V DS =15V,I D =3.5A, nc Gate-Source Charge Q gs V GS =10V nc Gate-Drain Charge nc Drain-Source Diode Characteristics Diode Forward Voltage 3 Diode Forward Current 2 Q gd VSD VGS=0V,I S =3.5A V IS A na Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%. 2/10
3 P-Channel Electrical Characteristics (T A =25 C unless otherwise specified) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS VGS=0V I D =-250μA V Zero Gate Voltage Drain Current I DSS V DS =-30V,V GS =0V μa Gate-Body Leakage Current I GSS V GS =± 20V,V DS =0V - - ±100 na On Characteristics 3 Gate Threshold Voltage V GS(th) VDS=VGS,I D =-250μA V Drain-Source On-State Resistance R DS(ON) V GS =-10V, I D =-2.7A mω V GS =-4.5V, I D =-2A mω Forward Transconductance g FS V DS =-10V,I D =-2.7A 2 - S Dynamic Characteristics Input Capacitance C lss PF V DS =-15V,V GS =0V, Output Capacitance C oss PF F=1.0MHz Reverse Transfer Capacitance PF Switching Characteristics C rss Turn-on Delay Time t d(on) ns Turn-on Rise Time t r V DD =-15V,R L =15Ω ns Turn-Off Delay Time t d(off) V GS =-10V,R GEN =6Ω ns Turn-Off Fall Time t f ns Total Gate Charge Q g nc Gate-Source Charge Q gs V DS =-15V,I D =-2.7A,V GS =-10V nc Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage 3 Q gd VSD nc VGS=0V,I S =-2.7A V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%. 3/10
4 N-Channel Typical Electrical and Thermal Characteristic Curves Vgs Rgen Vin G D Vdd Rl Vout t d(on) V OUT t on t r INVERTED t off t t d(off) f) f S V IN 50% 50% PULSE WIDTH Figure 1 Switching Test Circuit Figure 2 Switching Waveforms ID- Drain Current (A) ID- Drain Current (A) V DS Drain-Source Voltage (V) Figure 3 Safe Operation Area ID- Drain Current (A) RDS(ON) On-Resistance(Ω) T J -Junction Temperature( C) Figure 4 Drain Current V DS Drain-Source Voltage (V) Figure 5 Output Characteristics I D - Drain Current (A) Figure 6 Drain-Source On-Resistance 4/10
5 N-Channel Typical Electrical and Thermal Characteristic Curves V GS Gate-Source Voltage (V) Figure 7 Transfer Characteristics T J -Junction Temperature( C) Figure 8 Drain-Source On-Resistance V GS Gate-Source Voltage (V) Figure 9 R DS(ON) vs V GS V DS Drain-Source Voltage (V) Figure 10 Capacitance vs V DS VGS Gate-Source Voltage (V) Is- Reverse Drain Current (A) RDS(ON) On-Resistance(Ω) C Capacitance (pf) ID- Drain Current (A) Normalized On-Resistance Q g Gate Charge (nc) Figure 11 Gate Charge 5/10 V SD Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward
6 N-Channel Typical Electrical and Thermal Characteristic Curves r(t),normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance 6/10
7 P-Channel Typical Electrical and Thermal Characteristic Curves Normalized On-Resistance t d(on) V OUT V IN t on t r INVERTED 50% 50% PULSE WIDTH t off t t d(off) f) f Figure 1 Switching Test Circuit Figure 2 Switching Waveforms -V DS Drain-Source Voltage (V) Figure 3 Safe Operation Area T J -Junction Temperature( C) Figure 4 Drain Current -ID- Drain Current (A) RDS(ON) On-Resistance(Ω) -ID- Drain Current (A) -ID- Drain Current (A) -V DS Drain-Source Voltage (V) Figure 5 Output Characteristics -I D - Drain Current (A) Figure 6 Drain-Source On-Resistance 7/10
8 P-Channel Typical Electrical and Thermal Characteristic Curves -V GS Gate-Source Voltage (V) Figure 7 Transfer Characteristics T J -Junction Temperature( C) Figure 8 Drain-Source On-Resistance -V GS Gate-Source Voltage (V) Figure 9 R DS(ON) vs V GS -V DS Drain-Source Voltage (V) Figure 10 Capacitance vs V DS -VGS Gate-Source Voltage (V) Is- Reverse Drain Current (A) RDS(ON) On-Resistance(mΩ) C Capacitance (pf) -ID- Drain Current (A) Normalized On-Resistance Q g Gate Charge (nc) Figure 11 Gate Charge 8/10 V SD Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward
9 P-Channel Typical Electrical and Thermal Characteristic Curves r(t),normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 13 Normalized Maximum Transient Thermal Impedance 9/10
10 Package Outline Dimensions SOT-23-6L Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A A b c D E E e 0.950(BSC) 0.037(BSC) e L Suggested Pad Layout 10/10 Doc.UxSN3.0 Dec.2018
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General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationTHERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θjc 6 C / W Junction-to-Ambient R θja 42 C / W STATIC
N- & annel Enhancement Mode P3ND5G PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 3 mω 5A annel -3 36mΩ -9A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 5 C Unless
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationSX3439K. Main Product Characteristics I D. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)
Main Product Characteristics V (BR)DSS 20V -20V 380mΩ@ 4.5V 520mΩ@-4.5V R DS(on) 450mΩ@2.5V 700mΩ@-2.5V 800mΩ@1.8V 950mΩ(TYP)@-1.8V 0.75A -0.66A SOT-563 Schematic Diagram Features and Benefits Advanced
More informationN- & P-Channel Enhancement Mode Field Effect Transistor
N- & annel Enhancement Mode P2OAG TSOP- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 2V mω.a annel -2V 5mΩ -2.5A G D G D D S D2 5 2 G : GATE D : DRAIN S : SOURCE S S G S2 G2 ABSOLUTE MAXIMUM RATINGS (T
More informationZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.20 ; ID=-2.3A SOT23-6
V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-V; RDS(ON)=. ; ID=-.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationSMN01L20Q Logic Level N-Ch Power MOSFET
Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features 0.85A, 200V, R DS(on) =1.35Ω @ V GS =10V Low gate charge: Q g =4nC (Typ.) Fast switching 100% avalanche tested RoHS compliant device D
More informationZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.18 ; ID=1.7A SOT23
ZXM6N2F 2V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=2V; RDS(ON)=.8 ; ID=.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits
More informationAOL1422 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and
More informationSSF11NS65UF 650V N-Channel MOSFET
Main Product Characteristics V DSS R DS(on) I D 650V 0.32Ω (typ.) 11A TO-220F Marking and Pin S c h e m a ti c Dia g r a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche
More informationUNISONIC TECHNOLOGIES CO., LTD UT4411
UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationAOP608 Complementary Enhancement Mode Field Effect Transistor
AOP68 Complementary Enhancement Mode Field Effect Transistor General Description The AOP68 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationN-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage
More informationTSM V P-Channel MOSFET
SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DSON (mω) I D (A) 20 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Features Advance Trench Process
More informationDFN3X3-8 Pin Configuration. Units Symbol. Parameter
General Description Product Summery Description The WSD20L75DN uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.60 ; ID=-0.9A SOT23
ZXM6P2F 2V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-2V; RDS(ON)=.6 ; ID=-.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the
More informationProduct Summary. BV DSS typ. 84 V. R DS(ON) typ. 6.8 mω I D 60 A
RM60N75LD N-Channel Enhancement Mode Power MOSFET General Description The RM60N75LD uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationAO3408 N-Channel Enhancement Mode Field Effect Transistor
August 2 AO348 N-Channel Enhancement Mode Field Effect Transistor General Description The AO348 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
More informationSMN630LD Logic Level N-Ch Power MOSFET
Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage: BV DSS =200V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On-Resistance: R DS(on) =0.34Ω
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July 2 AO34 P-Channel Enhancement Mode Field Effect Transistor General Description The AO34 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
More informationTSM V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS =-4.5V -3.2-20 80 @ V GS =-2.5V -2.7 130 @ V GS =-1.8V -2.0 Features Advance Trench Process Technology
More informationS2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6
Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.
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