IGBT Highspeed5IGBTinTRENCHSTOP TM technologycopackedwithrapid1 fastandsoftantiparalleldiode
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1 IGBT HighspeedIGBTinTRENCHSTOP TM technologycopackedwithrapid fastandsoftantiparalleldiode 6VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl
2 Highspeedswitchingseriesfifthgeneration HighspeedIGBTinTRENCHSTOP TM technologycopackedwithrapid fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedHtechnologyoffering BestinClassefficiencyinhardswitchingandresonant topologies PlugandplayreplacementofpreviousgenerationIGBTs 6Vbreakdownvoltage LowQG IGBTcopackedwithRAPIDfastandsoftantiparalleldiode Maximumjunctiontemperature7 C QualifiedaccordingtoJEDECfortargetapplications Pbfreeleadplating;RoHScompliant CompleteproductspectrumandPSpiceModels: Applications: Solarconverters Uninterruptiblepowersupplies Weldingconverters Midtohighrangeswitchingfrequencyconverters G E C G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj= C Tvjmax Marking Package 6V A.6V 7 C KEH PGTO223 2 Rev.2.,2
3 Highspeedswitchingseriesfifthgeneration TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing Testing Conditions Revision History Disclaimer Rev.2.,2
4 Highspeedswitchingseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed8%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collectoremitter voltage VCE 6 V DCcollectorcurrent,limitedbyTvjmax TC= C TC= C IC Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 4. A TurnoffsafeoperatingareaVCE 6V,Tvj 7 C 4. A Diodeforwardcurrent,limitedbyTvjmax TC= C TC= C IF Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 4. A Gateemitter voltage VGE ±2 V PowerdissipationTC= C PowerdissipationTC= C Ptot. 2. Operating junction temperature Tvj C Storage temperature Tstg...+ C Soldering temperature, wave soldering.6mm (.63in.) from case for s 26 Mounting torque, M3 screw Maximum of mounting processes: 3 A A W C M.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance junction ambient Rth(jc).4 K/W Rth(jc) 2.9 K/W Rth(ja) 62 K/W 4 Rev.2.,2
5 Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj= C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.2mA 6 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=.V,IC=.A Tvj= C Tvj= C Tvj=7 C VGE=V,IF=9.A Tvj= C Tvj= C Tvj=7 C Gateemitter threshold voltage VGE(th) IC=.mA,VCE=VGE V Zero gate voltage collector current ICES VCE=6V,VGE=V Tvj= C Tvj=7 C Gateemitter leakage current IGES VCE=V,VGE=2V na Transconductance gfs VCE=2V,IC=.A 22. S V V µa ElectricalCharacteristic,atTvj= C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 93 Output capacitance Coes VCE=V,VGE=V,f=MHz 24 Reverse transfer capacitance Cres 4 Gate charge Internal emitter inductance measured mm (.97 in.) from case QG VCC=2V,IC=.A, VGE=V pf 38. nc LE 7. nh SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj= C Turnon delay time td(on) Tvj= C, 7 ns Rise time VCC=4V,IC=7.A, tr 7 ns VGE=./.V, Turnoff delay time td(off) RG(on)=39.Ω,RG(off)=39.Ω, 6 ns Fall time Lσ=3nH,Cσ=3pF tf ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.2 mj Turnoff energy Eoff diode reverse recovery.. mj Total switching energy Ets.7 mj Rev.2.,2
6 Highspeedswitchingseriesfifthgeneration Turnon delay time td(on) Tvj= C, 6 ns Rise time VCC=4V,IC=2.A, tr 3 ns VGE=./.V, Turnoff delay time td(off) RG(on)=39.Ω,RG(off)=39.Ω, 38 ns Fall time Lσ=3nH,Cσ=3pF tf 2 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.4 mj Turnoff energy Eoff diode reverse recovery..2 mj Total switching energy Ets.6 mj DiodeCharacteristic,atTvj= C Diode reverse recovery time trr Tvj= C, 48 ns Diode reverse recovery charge VR=4V, Qrr.2 µc IF=7.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 8. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 2 A/µs Diode reverse recovery time trr Tvj= C, ns Diode reverse recovery charge VR=4V, Qrr.9 µc IF=2.A, Diode peak reverse recovery current Irrm dif/dt=a/µs 6.7 A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj= C Turnon delay time td(on) Tvj= C, 6 ns Rise time VCC=4V,IC=7.A, tr 8 ns VGE=./.V, Turnoff delay time td(off) RG(on)=39.Ω,RG(off)=39.Ω, 8 ns Fall time Lσ=3nH,Cσ=3pF tf 6 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.8 mj Turnoff energy Eoff diode reverse recovery..8 mj Total switching energy Ets.26 mj Turnon delay time td(on) Tvj= C, 4 ns Rise time VCC=4V,IC=2.A, tr 4 ns VGE=./.V, Turnoff delay time td(off) RG(on)=39.Ω,RG(off)=39.Ω, 22 ns Fall time Lσ=3nH,Cσ=3pF tf 3 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.6 mj Turnoff energy Eoff diode reverse recovery..3 mj Total switching energy Ets.9 mj 6 Rev.2.,2
7 Highspeedswitchingseriesfifthgeneration DiodeCharacteristic,atTvj= C Diode reverse recovery time trr Tvj= C, 74 ns Diode reverse recovery charge VR=4V, Qrr.42 µc IF=7.A, Diode peak reverse recovery current Irrm dif/dt=a/µs. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 6 A/µs Diode reverse recovery time trr Tvj= C, 42 ns Diode reverse recovery charge VR=4V, Qrr.2 µc IF=2.A, Diode peak reverse recovery current Irrm dif/dt=a/µs. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 3 A/µs 7 Rev.2.,2
8 Highspeedswitchingseriesfifthgeneration 9 IC,COLLECTORCURRENT[A] tp=µs µs µs µs 2µs µs DC Ptot,POWERDISSIPATION[W] VCE,COLLECTOREMITTERVOLTAGE[V] Figure. Forwardbiassafeoperatingarea (D=,TC= C,Tvj 7 C;VGE=V. RecommendeduseatVGE 7.V) 7 7 TC,CASETEMPERATURE[ C] Figure 2. Powerdissipationasafunctionofcase temperature (Tvj 7 C) IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] VGE=2V 8V 2V V 8V 7V 6V V 4V TC,CASETEMPERATURE[ C] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE V,Tvj 7 C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj= C) 8 Rev.2.,2
9 VGE=2V IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] 3 8V 3 2V V 8V 2 7V 6V V 3 2 4V Tj= C Tj= C VCE, COLLECTOREMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] Figure. Typical output characteristic (Tvj= C) Figure 6. Typical transfer characteristic (VCE=2V) 2. IC=3,8A IC=7,A IC=A td(off) tf td(on) tr 2. t, SWITCHING TIMES [ns] VCEsat, COLLECTOREMITTER SATURATION [V] Tvj, JUNCTION TEMPERATURE [ C] IC, COLLECTOR CURRENT [A] Figure 7. Typical collectoremitter saturation voltage as Figure 8. Typical switching times as a function of a function of junction temperature collector current (VGE=V) (inductive load, Tvj= C, VCE=4V, VGE=/V, rg=39ω, Dynamic test circuit in Figure E) 9 Rev. 2., 2
10 td(off) tf td(on) tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] td(off) tf td(on) tr rg, GATE RESISTOR [Ω] Figure 9. Typical switching times as a function of gate resistor (inductive load, Tvj= C, VCE=4V, VGE=/V, IC=7,A,Dynamic test circuit in Figure E) 7.6 typ. min. max.. Eoff Eon Ets.4 E, SWITCHING ENERGY LOSSES [mj] VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] 7 Figure. Typical switching times as a function of junction temperature (inductive load, VCE=4V, VGE=/V, IC=7,A, rg=39ω,dynamic test circuit in Figure E) Tvj, JUNCTION TEMPERATURE [ C] 7. 7 Tvj, JUNCTION TEMPERATURE [ C] IC, COLLECTOR CURRENT [A] Figure. Gateemitter threshold voltage as a function of junction temperature (IC=.mA) Figure 2. Typical switching energy losses as a function of collector current (inductive load, Tvj= C, VCE=4V, VGE=/V, rg=39ω,dynamic test circuit in Figure E) Rev. 2., 2
11 .3.3 Eoff Eon Ets E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj].3 Eoff Eon Ets rg, GATE RESISTOR [Ω] Figure 3. Typical switching energy losses as a function of gate resistor (inductive load, Tvj= C, VCE=4V, VGE=/V, IC=7,A, Dynamic test circuit in Figure E) 7 6 Eoff Eon Ets 3V 2V 4. VGE, GATEEMITTER VOLTAGE [V] E, SWITCHING ENERGY LOSSES [mj] 7 Figure 4. Typical switching energy losses as a function of junction temperature (inductive load, VCE=4V, VGE=/V, IC=7,A, rg=39ω,dynamic test circuit in Figure E).3.27 Tvj, JUNCTION TEMPERATURE [ C] VCE, COLLECTOREMITTER VOLTAGE [V] Figure. Typical switching energy losses as a function of collector emitter voltage (inductive load, Tvj= C, VGE=/V, IC=7,A, rg=39ω,dynamic test circuit in Figure E) QGE, GATE CHARGE [nc] Figure 6. Typical gate charge (IC=A) Rev. 2., 2
12 Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] Ciss Coss Crss C, CAPACITANCE [pf] 2 D= single pulse. i: ri[k/w]: τi[s]: 2.2E 3.2E4 3.E E7 3 E6 VCE, COLLECTOREMITTER VOLTAGE [V] E E4... tp, PULSE WIDTH [s] Figure 7. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz) Figure 8. IGBT transient thermal resistance (D=tp/T) Tj= C, IF = 7.A Tj= C, IF = 7.A 8 trr, REVERSE RECOVERY TIME [ns] Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] 9 D= single pulse i: ri[k/w]: τi[s]:.9e 2.4E4 2.3E E7 E6 E E tp, PULSE WIDTH [s] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 9. Diode transient thermal impedance as a function of pulse width (D=tp/T) Figure 2. Typical reverse recovery time as a function of diode current slope (VR=4V) 2 Rev. 2., 2
13 . Tj= C, IF = 7.A Tj= C, IF = 7.A Irr, REVERSE RECOVERY CURRENT [A] Qrr, REVERSE RECOVERY CHARGE [µc].4 7. Tj= C, IF = 7.A Tj= C, IF = 7.A dif/dt, DIODE CURRENT SLOPE [A/µs] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 2. Typical reverse recovery charge as a function of diode current slope (VR=4V) Figure 22. Typical reverse recovery current as a function of diode current slope (VR=4V) 27 Tj= C, IF = 7.A Tj= C, IF = 7.A 2 IF, FORWARD CURRENT [A] dirr/dt, diode peak rate of fall of Irr [A/µs] Tj= C Tj= C dif/dt, DIODE CURRENT SLOPE [A/µs] VF, FORWARD VOLTAGE [V] Figure 23. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V) Figure 24. Typical diode forward current as a function of forward voltage 3 Rev. 2., 2
14 2. IF=4,A IF=9A IF=8A VF, FORWARD VOLTAGE [V] Tvj, JUNCTION TEMPERATURE [ C] Figure. Typical diode forward voltage as a function of junction temperature 4 Rev. 2., 2
15 Package Drawing PGTO223 Rev. 2., 2
16 Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a % VGE b t Qa IC(t) Qb di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. % VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t t on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 6 Rev. 2., 2
17 Revision History Revision: 2, Rev. 2. Previous Revision Revision Date Subjects (major changes since last revision). 229 Preliminary data sheet New Marking Pattern 2. 2 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 8726 Munich, Germany 8726 München, Germany 2 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 Rev. 2., 2
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