MOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS P6 600VCoolMOS P6PowerTransistor IPx60R280P6. DataSheet. PowerManagement&Multimarket
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1 MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 6VCoolMOS P6PowerTransistor IPx6R28P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket
2 6VCoolMOS P6PowerTransistor IPW6R28P6,IPP6R28P6,IPA6R28P6 1Description CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos P6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler. TO247 TO22 tab TO22FP Drain Pin 2, tab Features IncreasedMOSFETdv/dtruggedness ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(JSTD2 andjesd22) Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptv,lighting,server,telecom andups. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 6 V RDS(on),max 28 mω Qg.typ 26 nc ID,pulse 39 A Eoss@4V 3. µj Body diode di/dt A/µs Type/OrderingCode Package Marking RelatedLinks IPW6R28P6 PGTO 247 IPP6R28P6 PGTO 22 6R28P6 see Appendix A IPA6R28P6 PGTO 22 FullPAK 2 Rev.2.1,21312
3 6VCoolMOS P6PowerTransistor IPW6R28P6,IPP6R28P6,IPA6R28P6 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Disclaimer Rev.2.1,21312
4 6VCoolMOS P6PowerTransistor IPW6R28P6,IPP6R28P6,IPA6R28P6 2Maximumratings attj=2 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=2 C TC=1 C Pulsed drain current 2) ID,pulse 39 A TC=2 C Avalanche energy, single pulse EAS 28 mj ID=2.4A; VDD=V; see table 1 Avalanche energy, repetitive EAR.43 mj ID=2.4A; VDD=V; see table 1 Avalanche current, repetitive IAR 2.4 A MOSFET dv/dt ruggedness dv/dt 1 V/ns VDS=...4V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS 3 3 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO22, TO247 Power dissipation (FullPAK) TO22FP Ptot 14 W TC=2 C Ptot 32 W TC=2 C Storage temperature Tstg 1 C Operating junction temperature Tj 1 C Mounting torque (Non FullPAK) TO22, TO247 Mounting torque (FullPAK) TO22FP 6 Ncm M3 and M3. screws Ncm M2. screws Continuous diode forward current IS 12. A TC=2 C Diode pulse current 2) IS,pulse 39 A TC=2 C Reverse diode dv/dt 3) dv/dt 1 V/ns VDS=...4V,ISD<=IS,Tj=2 C see table 8 Maximum diode commutation speed dif/dt A/µs VDS=...4V,ISD<=IS,Tj=2 C see table 8 Insulation withstand voltage for TO22FP VISO 2 V Vrms,TC=2 C,t=1min 1) Limited by Tj max. Maximum duty cycle D=.7 2) Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 4 Rev.2.1,21312
5 6VCoolMOS P6PowerTransistor IPW6R28P6,IPP6R28P6,IPA6R28P6 3Thermalcharacteristics Table3Thermalcharacteristics(NonFullPAK)TO22,TO247 Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 1.2 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.63 in.) from case for 1s Table4Thermalcharacteristics(FullPAK)TO22FP Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 3.9 C/W Thermal resistance, junction ambient RthJA 8 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.63 in.) from case for 1s Rev.2.1,21312
6 6VCoolMOS P6PowerTransistor IPW6R28P6,IPP6R28P6,IPA6R28P6 4Electricalcharacteristics attj=2 C,unlessotherwisespecified TableStaticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=1mA Gate threshold voltage V(GS)th V VDS=VGS,ID=.43mA Zero gate voltage drain current IDSS 1 1 µa VDS=6,VGS=V,Tj=2 C VDS=6,VGS=V,Tj=1 C Gatesource leakage current IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Ω VGS=1V,ID=.2A,Tj=2 C VGS=1V,ID=.2A,Tj=1 C Gate resistance RG. Ω f=1mhz,opendrain Table6Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 119 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 4 pf VGS=V,VDS=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 44 pf VGS=V,VDS=...4V Effective output capacitance, time related 2) Co(tr) 182 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 12 ns Rise time tr 6 ns Turnoff delay time td(off) 36 ns Fall time tf 6 ns VDD=4V,VGS=13V,ID=6.A, RG=3.4Ω;seetable9 VDD=4V,VGS=13V,ID=6.A, RG=3.4Ω;seetable9 VDD=4V,VGS=13V,ID=6.A, RG=3.4Ω;seetable9 VDD=4V,VGS=13V,ID=6.A, RG=3.4Ω;seetable9 Table7Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 7 nc VDD=4V,ID=6.A,VGS=to1V Gate to drain charge Qgd 9. nc VDD=4V,ID=6.A,VGS=to1V Gate charge total Qg 2. nc VDD=4V,ID=6.A,VGS=to1V Gate plateau voltage Vplateau 6.1 V VDD=4V,ID=6.A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto4V 6 Rev.2.1,21312
7 6VCoolMOS P6PowerTransistor IPW6R28P6,IPP6R28P6,IPA6R28P6 Table8Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=6.A,Tj=2 C Reverse recovery time trr 263 ns Reverse recovery charge Qrr 2.8 µc Peak reverse recovery current Irrm 22 A VR=4V,IF=6.A,diF/dt=1A/µs; see table 8 VR=4V,IF=6.A,diF/dt=1A/µs; see table 8 VR=4V,IF=6.A,diF/dt=1A/µs; see table 8 7 Rev.2.1,21312
8 Electricalcharacteristicsdiagrams 6VCoolMOS P6PowerTransistor IPW6R28P6,IPP6R28P6,IPA6R28P6 Diagram1:Powerdissipation(NonFullPAK) Diagram2:Powerdissipation(FullPAK) Ptot[W] 6 Ptot[W] TC[ C] Ptot=f(TC) TC[ C] Ptot=f(TC) Diagram3:Max.transientthermalimpedance(NonFullPAK) 1 1 Diagram4:Max.transientthermalimpedance(FullPAK) 1 1. ZthJC[K/W] ZthJC[K/W] single pulse single pulse tp[s] ZthJC=f(tP);parameter:D=tp/T tp[s] ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.1,21312
9 6VCoolMOS P6PowerTransistor IPW6R28P6,IPP6R28P6,IPA6R28P6 Diagram:Safeoperatingarea(NonFullPAK) 1 2 Diagram6:Safeoperatingarea(FullPAK) ID[A] DC 1 µs 1 µs 1 µs 1 ms 1 ms ID[A] DC µs 1 µs 1 µs 1 ms 1 ms VDS[V] ID=f(VDS);TC=2 C;D=;parameter:tp VDS[V] ID=f(VDS);TC=2 C;D=;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) 1 2 Diagram8:Safeoperatingarea(FullPAK) µs 1 µs 1 µs 1 ms 1 ms µs 1 µs 1 µs 1 ms 1 ms ID[A] DC ID[A] 1 1 DC VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 9 Rev.2.1,21312
10 6V CoolMOS P6 Power Transistor IPW6R28P6, IPP6R28P6, IPA6R28P6 Diagram 9: Typ. output characteristics Diagram 1: Typ. output characteristics V 2 V 1 V 1 V 3 8V 2 3 8V 7V 1 ID [A] ID [A] 2 7V 2 6V V 6V V. V 4. V V V 1 VDS [V] 1 2 VDS [V] ID=f(VDS); Tj=2 C; parameter: VGS ID=f(VDS); Tj=12 C; parameter: VGS Diagram 11: Typ. drainsource onstate resistance Diagram 12: Drainsource onstate resistance V 1.1 6V 6. V RDS(on) [Ω] RDS(on) [Ω] 1.3 7V 1. 1 V.4 98% typ V ID [A] RDS(on)=f(ID); Tj=12 C; parameter: VGS Tj [ C] RDS(on)=f(Tj); ID=.2 A; VGS=1 V 1 Rev. 2.1, 21312
11 6V CoolMOS P6 Power Transistor IPW6R28P6, IPP6R28P6, IPA6R28P6 Diagram 13: Typ. transfer characteristics Diagram 14: Typ. gate charge C V VGS [V] ID [A] 2 48 V 1 C VGS [V] Qgate [nc] ID=f(VGS); VDS=2V; parameter: Tj VGS=f(Qgate); ID=6. A pulsed; parameter: VDD Diagram 1: Forward characteristics of reverse diode Diagram 16: Avalanche energy IF [A] 12 C EAS [mj] 2 2 C VSD [V] Tj [ C] IF=f(VSD); parameter: Tj 7 EAS=f(Tj); ID=2.4 A; VDD= V 11 Rev. 2.1, 21312
12 6V CoolMOS P6 Power Transistor IPW6R28P6, IPP6R28P6, IPA6R28P6 Diagram 17: Drainsource breakdown voltage Diagram 18: Typ. capacitances Ciss C [pf] VBR(DSS) [V] Coss Crss Tj [ C] VDS [V] VBR(DSS)=f(Tj); ID=1 ma C=f(VDS); VGS= V; f=1 MHz Diagram 19: Typ. Coss stored energy 4 Eoss [µj] VDS [V] Eoss=f(VDS) 12 Rev. 2.1, 21312
13 6V CoolMOS P6 Power Transistor IPW6R28P6, IPP6R28P6, IPA6R28P6 6 Test Circuits Table 9 Diode characteristics Test circuit for diode characteristics Diode recovery waveform V,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tf ts dif / dt QF IF t dirr / dt trr =tf +ts Qrr = QF + QS Irrm Rg1 = Rg 2 IF 1 %Irrm QS Table 1 Switching times Switching times test circuit for inductive load Switching times waveform VDS 9% VDS VGS VGS 1% td(on) td(off) tr ton tf toff Table 11 Unclamped inductive load Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS 13 ID VDS Rev. 2.1, 21312
14 6V CoolMOS P6 Power Transistor IPW6R28P6, IPP6R28P6, IPA6R28P6 7 Package Outlines Figure 1 Outline PGTO 247, dimensions in mm/inches 14 Rev. 2.1, 21312
15 6V CoolMOS P6 Power Transistor IPW6R28P6, IPP6R28P6, IPA6R28P6 Figure 2 Outline PGTO 22, dimensions in mm/inches 1 Rev. 2.1, 21312
16 6V CoolMOS P6 Power Transistor IPW6R28P6, IPP6R28P6, IPA6R28P6 Figure 3 Outline PGTO 22 FullPAK, dimensions in mm/inches 16 Rev. 2.1, 21312
17 6V CoolMOS P6 Power Transistor IPW6R28P6, IPP6R28P6, IPA6R28P6 8 Appendix A Table 12 Related Links IFX CoolMOSTM P6 Webpage: IFX CoolMOSTM P6 application note: IFX CoolMOSTM P6 simulation model: IFX Design tools: 17 Rev. 2.1, 21312
18 6V CoolMOS P6 Power Transistor IPW6R28P6, IPP6R28P6, IPA6R28P6 Revision History IPW6R28P6, IPP6R28P6, IPA6R28P6 Revision: 21312, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Release of multipackage datasheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition Published by Infineon Technologies AG München, Germany 211 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 18 Rev. 2.1, 21312
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MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS ª 5Power-Transistor,80V IPP020N08N5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS ª 5PowerTransistor,8V DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features Idealforhighfrequencyswitchingandsync.rec.
MOSFET IPN50R650CE. 500VCoolMOSªCEPowerTransistor
MOSFET 5VCoolMOSªCEPowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive
MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS 3Power-MOSFET,75V BSF450NE7NH3G. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS 3PowerMOSFET,75V DataSheet Rev.2.2 Final PowerManagement&Multimarket OptiMOSª3PowerMOSFET,75V 1Description CanPAKS Features OptimizedtechnologyforDC/DCconverters
OptiMOSTM OptiMOSTMFD Power-Transistor, 250 V
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM FDPower-Transistor,25V DataSheet Rev.2. Final PowerManagement&Multimarket 1Description Features N-channel,normallevel FastDiode(FD)withreducedQrr
MOSFET IPD70R1K4P7S. 700VCoolMOSªP7PowerTransistor
MOSFET 7VCoolMOSªP7PowerTransistor DPAK CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThelatestCoolMOS
MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS ª 5Power-Transistor,80V BSZ075N08NS5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS ª 5PowerTransistor,8V DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features Idealforhighfrequencyswitchingandsync.rec.
MOSFET IPAN65R650CE. 650VCoolMOS CEPowerTransistor
MOSFET 650VCoolMOS CEPowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive
MOSFET IPP60R099P7. 600VCoolMOSªP7PowerTransistor. tab
MOSFET 600VCoolMOSªP7PowerTransistor TheCoolMOS 7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowermosfets,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V
MOSFET IPD80R1K4P7. 800VCoolMOSªP7PowerTransistor
MOSFET Thelatest8VCoolMOS P7seriessetsanewbenchmarkin8V superjunctiontechnologiesandcombinesbestinclassperformancewith stateofthearteaseofuse,resultingfrominfineon sover8years pioneeringsuperjunctiontechnologyinnovation.
MOSFET IPN70R1K4P7S. 700VCoolMOSªP7PowerTransistor
MOSFET 7VCoolMOSªP7PowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThelatestCoolMOS P7isanoptimizedplatformtailoredtotargetcost
MOSFET IPN80R600P7. 800VCoolMOSªP7PowerTransistor
MOSFET 8VCoolMOSªP7PowerTransistor Thelatest8VCoolMOS P7seriessetsanewbenchmarkin8V superjunctiontechnologiesandcombinesbestinclassperformancewith stateofthearteaseofuse,resultingfrominfineon sover18years
MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-MOSFET,25V BSZ013NE2LS5I. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM 5PowerMOSFET,25V DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOS TM 5PowerMOSFET,25V 1Description Features Optimizedforhighperformancebuckconverters
MOSFET IPW60R031CFD7. 600VCoolMOSªCFD7PowerTransistor
MOSFET 600VCoolMOSªCFD7PowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.thelatestcoolmos
MOSFET IPN70R1K2P7S. 700VCoolMOSªP7PowerTransistor
MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThelatestCoolMOS
MOSFET IPZA60R037P7. 600VCoolMOS P7PowerTransistor
MOSFET 600VCoolMOS P7PowerTransistor TheCoolMOS 7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowermosfets,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V
MOSFET IPP60R360P7. 600VCoolMOSªP7PowerTransistor. tab
MOSFET 600VCoolMOSªP7PowerTransistor TheCoolMOS 7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowermosfets,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V
MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM Power-MOSFET,25V BSB012NE2LXI. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM PowerMOSFET,25V DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOS TM PowerMOSFET,25V 1Description CanPAKMsize Features
MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM Power-MOSFET,25V BSB008NE2LX. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM PowerMOSFET,25V DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOS TM PowerMOSFET,25V 1Description CanPAKMXsize Features
MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-MOSFET,25V BSZ031NE2LS5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM 5PowerMOSFET,25V DataSheet Rev.2. Final PowerManagement&Multimarket OptiMOS TM 5PowerMOSFET,25V 1Description Features Optimizedforhighperformancebuckconverters
MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM Power-MOSFET,40V BSZ025N04LS. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM PowerMOSFET,V DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOS TM PowerMOSFET,V 1Description Features Optimizedforsynchronousrectification
MOSFET IPB60R040C7. 600VCoolMOSªC7PowerTransistor
MOSFET 600VCoolMOSªC7PowerTransistor CoolMOS C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. 600VCoolMOS C7seriescombinestheexperienceoftheleadingSJ
MOSFET IPD60R1K0CE,IPU60R1K0CE. 600VCoolMOSªCEPowerTransistor
MOSFET DPAK IPAK CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive
MOSFET IPB60R060P7. 600VCoolMOSªP7PowerTransistor
MOSFET 600VCoolMOSªP7PowerTransistor TheCoolMOS 7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowermosfets,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V
MOSFET IPL60R065C7. 600VCoolMOSªC7PowerTransistor
MOSFET 600VCoolMOSªC7PowerTransistor CoolMOS C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThinPAK8x8 600VCoolMOS
MOSFET IPDD60R050G7. 600VCoolMOS G7PowerTransistor
MOSFET 600VCoolMOS G7PowerTransistor TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof thec7goldcoolmos technology,4pinkelvinsourcecapabilityand theimprovedthermalpropertiesoftheddpakpackagetoenablea
MOSFET IPD60R460CE,IPA60R460CE. 600VCoolMOSªCEPowerTransistor
MOSFET 6VCoolMOSªCEPowerTransistor DPAK PGTO22FP CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos
MOSFET IPI70R950CE,IPD70R950CE,IPS70R950CE. 700VCoolMOSªCEPowerTransistor
MOSFET 7VCoolMOSªCEPowerTransistor I²PAK DPAK IPAKSL CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos
MOSFET IPD50R950CE,IPU50R950CE. 500VCoolMOSªCEPowerTransistor
MOSFET DPAK IPAK CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive
MOSFET IPL65R195C7. 650VCoolMOSªC7PowerTransistor
MOSFET 650VCoolMOSªC7PowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThinPAK8x8 CoolMOS
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID 650 V 0.38 Ω 11 A Figure 1:
MOSFET IPL60R385CP. 600VCoolMOSªCPPowerTransistor
MOSFET 6VCoolMOSªCPPowerTransistor TheCoolMOS CPseriesoffersdeviceswhichprovideallbenefitsofa fastswitchingsjmosfetwhilenotsacrificingeaseofuse.extremelylow switchingandconductionlossesmakeswitchingapplicationsevenmore
MOSFET IPB020N10N5LF. OptiMOS TM 5LinearFET,100V
MOSFET OptiMOS TM 5LinearFET,1V D²PAK Features Idealforhotswapandefuseapplications VerylowonresistanceRDS(on) WidesafeoperatingareaSOA Nchannel,normallevel 1%avalanchetested Pbfreeplating;RoHScompliant
MOSFET IPB06P001L. OptiMOS TM PowerTransistor,-60V
MOSFET OptiMOS TM PowerTransistor,6V D²PAK Features PChannel VerylowonresistanceRDS(on)@VGS=4.5V 1%avalanchetested LogicLevel Enhancementmode Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC61249221
MOSFET IPD06P003N. OptiMOS TM PowerTransistor,-60V
MOSFET OptiMOS TM PowerTransistor,6V DPAK Features PChannel VerylowonresistanceRDS(on) 1%avalanchetested NormalLevel Enhancementmode Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC61249221 ProductValidation:
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package. Features. Description.
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STFH10N60M2 650 V 0.60 Ω 7.5 A
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID 650 V 0.18 Ω 20 A 1 2 3 Extremely low
MOSFET IPB044N15N5. OptiMOS ª 5Power-Transistor,150V
MOSFET OptiMOS ª 5PowerTransistor,15V D²PAK7pin Features Features ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) Verylowreverserecoverycharge(Qrr) 175 Coperatingtemperature Pbfreeleadplating;RoHScompliant
Prerelease Product(s) - Prerelease Product(s)
N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package Figure 1: Internal schematic diagram Features Order code VDS Datasheet - production data RDS(on) max. ID PTOT STE60N105DK5
MOSFET BSD340N. OptiMOS ª 2Small-Signal-Transistor,30V
MOSFET OptiMOS ª 2SmallSignalTransistor,30V SOT3636 Features DualNchannel Enhancementmode Logiclevel(4.5Vrated) Avalancherated QualifiedaccordingtoAECQ101 100%leadfree;RoHScompliant HalogenfreeaccordingtoIEC61249221
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFH18N60M2 18N60M2 TO-220FP wide creepage Tube
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STFH18N60M2 650 V 0.28 Ω 13 A Extremely
Features. Description. Table 1: Device summary Order code Marking Package Packing STF5N60M2 5N60M2 TO-220FP Tube
N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@ TJmax RDS(on) max. ID STF5N60M2 650 V 1.4 Ω 3.5 A Extremely low gate
Features. Description. Table 1: Device summary Order code Marking Package Packing STF140N6F7 140N6F7 TO-220FP Tube
N-channel 60 V, 0.0031 Ω typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF140N6F7 60 V 0.0035 Ω 70 A 33 W Among the
MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS ª 5Power-Transistor,80V IPB031N08N5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS ª 5PowerTransistor,8V DataSheet Rev.2. Final PowerManagement&Multimarket 1Description D²PAK Features Idealforhighfrequencyswitchingandsync.rec.
MOSFET IPB024N10N5. OptiMOS ª 5Power-Transistor,100V
MOSFET OptiMOS ª 5PowerTransistor,1V D²PAK7pin Features Idealforhighfrequencyswitchingandsync.rec. ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) Nchannel,normallevel 1%avalanchetested
Features. Table 1: Device summary Order code Marking Package Packing STW75NF30 75NF30 TO-247 Tube
N-channel 300 V, 35 mω typ., 60 A STripFET II Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW75NF30 300 V 45 mω 60 A 320 W TO-247 1 2 3 Exceptional
Data Sheet Explanation
Data Sheet Explanation V1.2 2014-04 Edition 2014-01 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN
MOSFET BSC160N15NS5. OptiMOS TM 5Power-Transistor,150V
MOSFET OptiMOS TM 5PowerTransistor,15V SuperSO8 Features Nchannel,normallevel ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) Verylowreverserecoverycharge(Qrr) 15 Coperatingtemperature
MOSFET IPB042N10N3G. OptiMOS ª 3Power-Transistor,100V
MOSFET OptiMOS ª 3PowerTransistor,1V D²PAK Features Nchannel,normallevel ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) 175 Coperatingtemperature Pbfreeleadplating;RoHScompliant QualifiedaccordingtoJEDEC
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF10N60M2 10N60M2 TO-220FP Tube
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@TJmax. RDS(on) max. ID STF10N60M2 650 V 0.60 Ω 7.5 A Extremely low gate
Features. Description. Table 1: Device summary Order code Marking Package Packing STF24N60DM2 24N60DM2 TO-220FP Tube
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 650 V 0.200 Ω 18 A TO-220FP Fast-recovery body
MOSFET IPD046N08N5. OptiMOS TM 5Power-Transistor,80V
MOSFET OptiMOS TM 5PowerTransistor,8V DPAK Features Nchannel,normallevel ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) 175 Coperatingtemperature Pbfreeleadplating;RoHScompliant QualifiedaccordingtoJEDEC
Features. Description. Table 1: Device summary Order code Marking Package Packing STF23N80K5 23N80K5 TO-220FP Tube
N-channel 800 V, 0.23 Ω typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF23N80K5 800 V 0.28 Ω 16 A 35 W TO-220FP Figure
Features. Description. Table 1: Device summary. Order code Marking Package Packing STW75N60M6 75N60M6 TO-247 Tube
N-channel 600 V, 32 mω typ., 72 A MDmesh M6 Power MOSFET in TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID STW75N60M6 600 V 36 mω 72 A 3 2 1 TO-247 Figure 1: Internal
Features. Description. AM01475v1_Tab. Table 1: Device summary Order code Marking Package Packing STW240N10F7 240N10F7 TO-247 Tube
N-channel 100 V, 2.6 mω typ., 180 A, STripFET F7 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID 100 V 3.0 mω 180 A 1 2 3 Among the lowest RDS(on) on
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID STFU13N65M2 650 V 0.43 Ω 10A 1 2 3
Features. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube
N-channel 600 V, 0.045 Ω typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW56N60M2-4 650 V 0.055 Ω 52 A Excellent switching
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max. ID Ptot STFU10NK60Z 600 V 0.75 Ω 10
MOSFET MetalOxideSemiconductorFieldEffectTransistor. OptiMOS TM OptiMOS TM 5Power-Transistor,80V BSC117N08NS5. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS TM 5PowerTransistor,8V DataSheet Rev.. Final PowerManagement&Multimarket OptiMOS TM 5PowerTransistor,8V 1Description SuperSO8 Features
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STWA48N60DM2 48N60DM2 TO-247 long leads Tube
N-channel 600 V, 0.065 Ω typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code VDS RDS(on) max. ID STWA48N60DM2 600 V 0.079 Ω 40 A Fast-recovery
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF4N90K5 4N90K5 TO-220FP Tube
N-channel 900 V, 1.90 Ω typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID STF4N90K5 900 V 2.10 Ω 4 A TO-220FP Figure 1: Internal
MOSFET IPB009N03LG. OptiMOS ª 3Power-Transistor,30V
MOSFET OptiMOS ª 3PowerTransistor,3V D²PAK7pin Features MOSFETforORingandUninterruptiblePowerSupply QualifiedaccordingtoJEDEC 1) fortargetapplications Nchannel Logiclevel UltralowonresistanceRDS(on) 1%Avalanchetested