MOSFET IPD60R1K0CE,IPU60R1K0CE. 600VCoolMOSªCEPowerTransistor
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- Peregrine Wilkerson
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1 MOSFET DPAK IPAK CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. 1 2 tab 1 2 tab Drain Pin 2, Tab Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Gate Pin 1 Source Pin Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptvandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 65 V RDS(on),max 1 mω Id. 6.8 A Qg.typ 1 nc ID,pulse 12 A Eoss@4V 1. µj Type/OrderingCode Package Marking RelatedLinks IPD6R1KCE PGTO 252 6S1KCE see Appendix A IPU6R1KCE PGTO
2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer
3 1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID A TC=25 C TC=1 C Pulsed drain current 2) ID,pulse 12 A TC=25 C Avalanche energy, single pulse EAS 46 mj ID=.8A; VDD=5V; see table 11 Avalanche energy, repetitive EAR.1 mj ID=.8A; VDD=5V; see table 11 Avalanche current, repetitive IAR.8 A MOSFET dv/dt ruggedness dv/dt 5 V/ns VDS=...48V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS V AC (f>1 Hz) Power dissipation TO251, TO252 Ptot 61 W TC=25 C Storage temperature Tstg 4 15 C Operating junction temperature Tj 4 15 C Continuous diode forward current IS 4.8 A TC=25 C Diode pulse current 2) IS,pulse 12 A TC=25 C Reverse diode dv/dt ) dv/dt 15 V/ns VDS=...4V,ISD<=IS,Tj=25 C see table 9 Maximum diode commutation speed dif/dt 5 A/µs VDS=...4V,ISD<=IS,Tj=25 C see table 9 2Thermalcharacteristics TableThermalcharacteristicsTO251,TO252 Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 2.6 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.6 in.) from case for 1s 1) Limited by Tj max. Maximum duty cycle D=.5 2) Pulse width tp limited by Tj,max ) IdenticallowsideandhighsideswitchwithidenticalRG 2161
4 Electricalcharacteristics attj=25 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=.25mA Gate threshold voltage V(GS)th V VDS=VGS,ID=.1mA Zero gate voltage drain current IDSS 1 1 µa VDS=6,VGS=V,Tj=25 C VDS=6,VGS=V,Tj=15 C Gatesource leakage current IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Ω VGS=1V,ID=1.5A,Tj=25 C VGS=1V,ID=1.5A,Tj=15 C Gate resistance RG 16 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 28 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 21 pf VGS=V,VDS=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 14 pf VGS=V,VDS=...48V Effective output capacitance, time related 2) Co(tr) 57 pf ID=constant,VGS=V,VDS=...48V Turnon delay time td(on) 1 ns Rise time tr 8 ns Turnoff delay time td(off) 6 ns Fall time tf 1 ns VDD=4V,VGS=1V,ID=1.9A, RG=12.2Ω;seetable1 VDD=4V,VGS=1V,ID=1.9A, RG=12.2Ω;seetable1 VDD=4V,VGS=1V,ID=1.9A, RG=12.2Ω;seetable1 VDD=4V,VGS=1V,ID=1.9A, RG=12.2Ω;seetable1 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 1.5 nc VDD=48V,ID=1.9A,VGS=to1V Gate to drain charge Qgd 6.5 nc VDD=48V,ID=1.9A,VGS=to1V Gate charge total Qg 1 nc VDD=48V,ID=1.9A,VGS=to1V Gate plateau voltage Vplateau 5.4 V VDD=48V,ID=1.9A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto8%Vo(BR)DSS 2) Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto8%Vo(BR)DSS
5 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=1.9A,Tj=25 C Reverse recovery time trr 22 ns Reverse recovery charge Qrr 1.5 µc Peak reverse recovery current Irrm 12 A VR=4V,IF=1.9A,diF/dt=1A/µs; see table 9 VR=4V,IF=1.9A,diF/dt=1A/µs; see table 9 VR=4V,IF=1.9A,diF/dt=1A/µs; see table
6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) 7 Diagram2:Safeoperatingarea(NonFullPAK) µs 1 µs 1 µs Ptot[W] 4 ID[A] DC 1 ms TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram:Safeoperatingarea(NonFullPAK) 1 2 Diagram4:Max.transientthermalimpedance(NonFullPAK) 1 1 ID[A] DC 1 µs 1 µs 1 µs 1 ms ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T
7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V 2 V 8 V V 1 V 2 V ID[A] V ID[A] V 6 V V 5.5 V 5.5 V 2 5 V V 4.5 V V VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 5. Diagram8:Drainsourceonstateresistance RDS(on)[Ω] V 5.5V 6 V 6.5 V 7 V 1 V RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=1.5A;VGS=1V
8 Diagram9:Typ.transfercharacteristics C Diagram1:Typ.gatecharge V 48 V ID[A] 6 15 C VGS[V] VGS[V] ID=f(VGS);VDS=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=1.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode C 125 C Diagram12:Avalancheenergy IF[A] EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=.8A;VDD=5V
9 Diagram1:Drainsourcebreakdownvoltage 7 Diagram14:Typ.capacitances Ciss VBR(DSS)[V] 62 6 C[pF] Coss Crss Tj[ C] VBR(DSS)=f(Tj);ID=.25mA VDS[V] C=f(VDS);VGS=V;f=1MHz Diagram15:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS)
10 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 1 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 9% V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D
11 PackageOutlines 2. ISSUE DATE EUROPEAN PROJECTION 4mm 2. SCALE REVISION DOCUMENT NO. Z8B28 *) mold flash not included MILLIMETERS 4.57 (BSC) 2.29 (BSC) L4 D N H E1 e1 e E D1 L b A DIM b2 c b c2 A1 5. MIN (BSC).9 (BSC) MAX INCHES MIN.217 MAX L F6 F1 F2 F F4 F Figure1OutlinePGTO252,dimensionsinmm/inches
12 N L2 L MILLIMETERS A1 b4 b2 b A DIM D1 E E1 c2 D e1 e c MIN MAX INCHES.18.9 MIN.45.5 MAX TO25121/41/45 2. EUROPEAN PROJECTION ISSUE DATE SCALE 4mm 2. REVISION DOCUMENT NO. Z8B L1 Figure2OutlinePGTO251,dimensionsinmm/inches
13 6V CoolMOSª CE Power Transistor IPD6R1KCE, IPU6R1KCE 7 Appendix A Table 11 Related Links IFX CoolMOSTM CE Webpage: IFX CoolMOSTM CE application note: IFX CoolMOSTM CE simulation model: IFX Design tools:
14 6V CoolMOSª CE Power Transistor IPD6R1KCE, IPU6R1KCE Revision History IPD6R1KCE, IPU6R1KCE Revision: 2161 Previous Revision Date Subjects (major changes since last revision) Release of final version Updated to qualified for standard grade & updated package drawing 2161 Modified Id, Rthjc. Modified SOA, Zthjc curves Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CoolGaN, CoolMOS, CoolSET, CoolSiC, CORECONTROL, CROSSAVE, DAVE, DIPOL, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, Infineon, ISOFACE, IsoPACK, iwafer, MIPAQ, ModSTACK, myd, NovalithIC, OmniTune, OPTIGA, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PROFET, PROSIL, RASIC, REAL, ReverSave, SatRIC, SIEGET, SIPMOS, SmartLEWIS, SOLID FLASH, SPOC, TEMPFET, thinq, TRENCHSTOP, TriCore. Trademarks updated August 215 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG München, Germany 216 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered
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