EXPERIMENT #3 TRANSISTOR BIASING

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Doreen Butler
5 years ago
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1 EXPERIMENT #3 TRANSISTOR BIASING Bias (operating point) for a transistor is established by specifying the quiescent (D.C., no signal) values of collector-emitter voltage V CEQ and collector current I CQ. Reliable operation of a transistor over a wide range of temperatures requires that bias voltage and current remain stable. However, variations of reverse-bias collector current I CO, and emitter-base junction voltage with temperature preclude stable bias unless external compensating circuits are used. Bias stabilizing circuits may employ resistors, thermistors, diodes, etc. The choice of the operating point of a transistor is determined by several factors, such as maximum voltage swing, allowable operating region and small signal parameters. If the Qpoint shifts, the output signal might get clipped or the transistor may go out of the safe operating region. Figure 2-1 shows three types of transistor biasing circuits. The configuration shown in the Figure 2-1a is the simplest way of biasing a bipolar transistor. There is no stabilization in this circuit hence any change in the transistor parameters or the ambient temperature will shift the Q-point. For a desired V CEQ and I CQ pair, the resistor values may be calculated as follows: In order to stabilize the operating point, some kind of negative feedback must be used at the expense of a reduced voltage gain. Figure 2-1b shows one of the simplest bias circuits of this kind. If the Q-point of the circuit tends to shift, the base current, which is proportional to V CE, will increase or decrease accordingly to compensate for this shift. The equation (2.2) is also valid for this circuit provided that h FE >> 1 (which is true for most modern transistors). R B can then be obtained from the equation (2.3). The inclusion of an emitter resistance always improves the bias stabilization. But the collector current and the voltage are still depending on hfe. In order to get a bias, which is independent of transistor parameters, the base of the transistor must be driven from a voltage source. That is, the equivalent output impedance of the source must be low compared to the input impedance of the transistor. If,

2 this condition is satisfied in the circuit in the Figure 2-1c. The voltage source to drive the base is obtained using voltage dividing resistors R B1, R B2. Assuming the bleeder current, I 1, is ten times larger than the base current, I B = IC / hfe, (this assumption usually satisfies the equation 2.4) the resistor values may be easily evaluated as follows: The quiescent voltages and currents of this circuit are quite independent of transistor parameters and temperature and are functions of resistance values only.

EQUIPMENT COMPONENTS PROCEDURE The first step in creating the data charts for measuring the BJT's characteristics is to construct a test circuit.

The circuit was constructed with the following schematic: We will use three experimental trials, with a different Vs for each trial.

3 EQUIPMENT COMPONENTS PROCEDURE The first step in creating the data charts for measuring the BJT's characteristics is to construct a test circuit. Here, we are using a simple circuit with only one resistor, two voltage supplies, an ammeter, and the BJT. The circuit was constructed with the following schematic: We will use three experimental trials, with a different Vs for each trial. Since the voltage drop across the Base- Emitter junction is a constant 0.7 volts, the remainder of Vs must drop across the resistor. This allows us to find the value of the base current. The resistor used was labeled 1 MΩ, but the real value was 997 KΩ. For each of the three trials (V BE =20V, 25V and 30V), vary V CE between 0.02 volts and 20 volts and measure the resulting collector current, I C. Fill the following table wih the data you collected.

4 Table 2.1 COLLECTOR CURRENT (I C ) V CE (Volts) V S =20 V V S =25 V V S =30 V

5 After finishing the first step continue with the following steps:

7 Note: Xmax in Table 2.1 is the maximum variation of the 4 specimens. For example V CEQ is maximum for specimen 2 and it is minimum for specimen 4. Than Max. Variation will be V CEQ(2) - V CEQ(4).

Bipolar Junction Transistors

Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal