Expanded Answer: Transistor Amplifier Problem in January/February 2008 Morseman Column
|
|
- Aubrey Ramsey
- 6 years ago
- Views:
Transcription
1 Expanded Answer: Transistor Amplifier Problem in January/February 2008 Morseman Column Here s what I asked: This month s problem: Figure 4(a) shows a simple npn transistor amplifier. The transistor has = 220, and its base-emitter voltage is 0.7 V. What are the quiescent base and collector currents, and the collector voltage? Can you estimate the voltage gain, v 2 /v 1? Can you estimate the input impedance of the amplifier? What are the advantages and disadvantages of deriving the base biasing current from the collector rather than the positive line? Here is the Figure: Figure 1: Simple amplifier schematic. First, the dc conditions: We find the dc operating point by relating the voltage drop across the two resistors to the currents flowing through them: = (I c + I b ) R L + I b R b but I b = I c ( so 6 = I c ) R L + I c R b and 1 6 so I c R L + R b and I b = I c = = = µa. 3 ma also V c = 6.7 I c R L = = 3.7 V Small-signal Analysis Figure 2 (a) shows the circuit again, with input and output voltages renamed for convenience. The simplest useful small-signal equivalent circuit of a bi-polar transistor is shown in figure 2 (b). Small- 1
2 signal means that the circuit is linearized, and the two parameters involved ( and ) are evaluated at the transistor s dc operating point. More complex equivalent circuits are used in SPICE analysis, but this one is almost always good enough for simple estimates. Figure 2: (a) Circuit as drawn. (b) Equivalent small-signal transistor circuit. (c) Small-signal circuit of complete amplifier is now the small-signal beta, also known as h fe, 1 and is the slope of the versus I c characteristic of the transistor. Both the small and large-signal values are usually similar however, and is a very variable parameter anyway, so we will assume the same value. The resistance is the slope of the diode characteristic formed by the base-emitter junction, evaluated again at the operating point. If the diode is assumed to obey the ideal diode equation, its value is approximately 2 Figure 2 (c) shows the small-signal circuit of the complete amplifier. original circuit, and is derived with these assumptions: This looks nothing like the Both coupling capacitors have negligible impedance at the operating frequency, and can be replaced by short-circuits. Since we are considering only small-signal, ac excitation, and no ac voltage can exist on a perfect dc power supply, the power supply acts like a short-circuit at signal frequencies, and its positive and negative terminals can both be connected to ground (the bottom node). For convenience, we define two more currents, I in and I out, as shown. Then: v 2 = i 0 R L (1) i o = v 1 v 2 R b i b (2) i b = v 1 (3) 1 R eliminating i 0 and I b, A v = b (4) R L R b 1 h fe is so named because it is one of the parameters of the four-element h-parameter equivalent circuit, much used in the early days. The two-element circuit used here is an approximate form of this. 2 This expression for is proved in my text, Transistor Electronics, and other places. See also the appendix to this document. 2
3 = ( 1 ) R p Rb (5) where R p = R L R b (6) so A v R p since R b >> (7) and R b R L (8) so simplifying further, A v R L (9) but (10) ( ) 40Ic so A v R L 40V L (11) where V L = I c R L = the dc voltage across the load resistor. (12) whence A v = 120 (13) The approximate expression for the voltage gain given by equation (11) is the same as that of a standard bi-polar amplifier. In fact, the approximation is quite good, overestimating the gain by a few percent. To find the input impedance, consider the input current, i in. But this is the admittance of two resistors in parallel, or i in = v 1 + v 1 v 2 (14) R b i in = y in = 1 ( + 1 v ) 2 1 (15) v 1 v 1 R b assume v 2 v 1 R L (16) then y in R b + R L R b (17) y in 1 R b + 2 (18) Summarizing, we estimate: r in 1 R b y in 2 2 (19) r in 916 Ω 80I c (20) I c = 3 ma (21) I b = 13.6 µa (22) V c = 3.7 V (23) A v = 120 (24) r in = 916 Ω (25) We see that the voltage gain is very slightly less than a standard amplifier, the input admittance is about half that of a standard amplifier, 3
4 For typical component values, it is found that the fractional increase in collector current, I c, is about half that of the fractional increase in. Thus this circuit is best used to amplify very small signals, where operating point variations caused by variation will not cause non-linearity. An alternative viewpoint is to assume that the value of R b, the feedback resistor, is so large that we can ignore its effect on the gain, which becomes that of a standard common-emitter amplifier without feedback - as justified above. But its effect must be considered in the input impedance, particularly if the gain is high. We can include it using Miller s Theorem. This theorem says that if an amplifier has voltage gain A v, with an impedance z b connected between the input and output terminals, this is equivalent to removing z b, and connecting an impedance of z b /A v directly across the input terminals. If you work through this, you get the same approximate expressions as those for the voltage gain and input impedance as above. Advantages and Disadvantages You design a circuit like this by assuming some value of, and then choosing R b R L. This puts the quiescent dc collector voltage about half-way between the power supply voltage and ground, giving maximum signal swing. But as stated above, if is not quite right, it doesn t matter too much, because the negative dc feedback through R b partially compensates. This is an advantage. Another is that no biasing chain resistors nor associated by-pass capacitors are necessary. However, you can design an amplifier using one of the standard circuits with much better immunity to variation. This is a disadvantage. Another is that the input impedance is lowered by the negative feedback caused by R b. This can also be shown using Miller s theorem. An LTSpice Simulation Figure 3 shows (lower panel) an LTSpice model of the circuit and (upper panel) the waveform at the collector, for an input sinewave voltage of 1 mv peak-to-peak at 1 khz. I chose a BCW60B transistor (one supplied in the default LTSpice download) since it has nominal = 240, close enough to the design value. This is simulated using a transient analysis, and shows A v = 106 (estimated as -120 above) (26) V c = 3.5 V (estimated as 3.7 V above) (27) The input impedance can t be plotted using a transient analysis, since this requires dividing the input voltage, V 1, by the current through C 1, and both waveforms pass through zero, so the division blows up. However, plotting both and diving the peak value of V 1 by the peak current through C 1, which is 60 na, we get r in = 1.09 kω (estimated as 916 Ω above). (28) 4
5 A small-signal, AC analysis can plot the input impedance directly, since this uses a linearized model with transistor parameters chosen at the dc operating point. This shows the same voltage gain, and r in = 1.11 kω. Figure 3: Top: Waveform at the collector. Bottom: The simulated circuit. Design Equations Practical rules for designing an amplifier like this are Set the dc voltage at the collector, V c, halfway between the supply voltage and ground. Decide on a suitable collector current, I c. The value of the load resistor required is then R L = V c 2I c. Estimate (or find from some spec sheet) for this transistor. The value of the bias resistor required is then R b = R L. Choose the value of the input coupling capacitor (C 1 in the simulation diagram) such that C 100I c (29) f where f = the lowest operating frequency required. (30) 5
6 Appendix: Transistor Parameters I have used the relationship = : The least technically obscure reference leading to the derivation of this expression starts on page 80 of the excellent practical reference by Horowitz and Hill. 3 The collector current, I c, of a bi-polar transistor is almost exactly related to the voltage applied across the base-emitter junction, V be, by the ideal diode equation. This is I c = ( )] Vbe I s [exp 1 (31) where I s = diode leakage current, (32) V be = appplied base-emitter diode voltage, (33) = threshold voltage, = kt q (34) k = Boltmann s constant, (35) T = absolute (Kelvin) temperature, (36) q = charge on electron. (37) evaluating, 25.3mV at room temperature (38) For convenience, I round this off to = 25 mv. The second term ( 1) dominates in the reverse region, where V be is negative, making the exponential term very small. It represents the saturation current, which is just I s. For forward currents in excess of a few tens of microamp, it can be neglected. Then, to a very good approximation, differentiating, I c = I s [exp I c V be = I s [ exp ( )] Vbe V ( T )] Vbe (39) = I c (40) therefore inverting, V be I c = I c (41) But the input resistance seen between the base and emitter is taken with respect to the base current, I b. This is times less, so this input resistance will be times higher. thus = I b (42) substituting I b = I c (43) = (I c /) = = I c I c (44) or more conveniently, = (45) 3 The Art of Electronics, Paul Horowitz and Winfield Hill, Cambridge, second edition. 6
Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS
Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS 1. Objective: The objective of this experiment is to explore the basic applications of the bipolar junction transistor
More informationPHYS225 Lecture 6. Electronic Circuits
PHYS225 Lecture 6 Electronic Circuits Transistors History Basic physics of operation Ebers-Moll model Small signal equivalent Last lecture Introduction to Transistors A transistor is a device with three
More informationAfter the initial bend, the curves approximate a straight line. The slope or gradient of each line represents the output impedance, for a particular
BJT Biasing A bipolar junction transistor, (BJT) is very versatile. It can be used in many ways, as an amplifier, a switch or an oscillator and many other uses too. Before an input signal is applied its
More informationEXPERIMENT #3 TRANSISTOR BIASING
EXPERIMENT #3 TRANSISTOR BIASING Bias (operating point) for a transistor is established by specifying the quiescent (D.C., no signal) values of collector-emitter voltage V CEQ and collector current I CQ.
More informationI1 19u 5V R11 1MEG IDC Q7 Q2N3904 Q2N3904. Figure 3.1 A scaled down 741 op amp used in this lab
Lab 3: 74 Op amp Purpose: The purpose of this laboratory is to become familiar with a two stage operational amplifier (op amp). Students will analyze the circuit manually and compare the results with SPICE.
More informationCurrent Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.
Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect
More informationThe Common Emitter Amplifier Circuit
The Common Emitter Amplifier Circuit In the Bipolar Transistor tutorial, we saw that the most common circuit configuration for an NPN transistor is that of the Common Emitter Amplifier circuit and that
More informationL02 Operational Amplifiers Applications 1
L02 Operational Amplifiers Applications 1 Chapter 9 Ideal Operational Amplifiers and Op-Amp Circuits Donald A. Neamen (2009). Microelectronics: Circuit Analysis and Design, 4th Edition, Mc-Graw-Hill Prepared
More informationChapter 6. BJT Amplifiers
Basic Electronic Devices and Circuits EE 111 Electrical Engineering Majmaah University 2 nd Semester 1432/1433 H Chapter 6 BJT Amplifiers 1 Introduction The things you learned about biasing a transistor
More informationUNIT 4 BIASING AND STABILIZATION
UNIT 4 BIASING AND STABILIZATION TRANSISTOR BIASING: To operate the transistor in the desired region, we have to apply external dec voltages of correct polarity and magnitude to the two junctions of the
More informationDEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I (Regulations 2013 UNIT-1 Part A 1. What is a Q-point? [N/D 16] The operating point also known as quiescent
More informationEEE225: Analogue and Digital Electronics
EEE225: Analogue and Digital Electronics Lecture II James E. Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk This Lecture 1 One Transistor Circuits Continued...
More informationTutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers
Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.
More informationAnalysis and Design of a Simple Operational Amplifier
by Kenneth A. Kuhn December 26, 2004, rev. Jan. 1, 2009 Introduction The purpose of this article is to introduce the student to the internal circuits of an operational amplifier by studying the analysis
More information5.25Chapter V Problem Set
5.25Chapter V Problem Set P5.1 Analyze the circuits in Fig. P5.1 and determine the base, collector, and emitter currents of the BJTs as well as the voltages at the base, collector, and emitter terminals.
More informationSmall signal ac equivalent circuit of BJT
UNIT-2 Part A 1. What is an ac load line? [N/D 16] A dc load line gives the relationship between the q-point and the transistor characteristics. When capacitors are included in a CE transistor circuit,
More informationDiode and Bipolar Transistor Circuits
Diode and Bipolar Transistor Circuits 2 2.1 A Brief Review of Semiconductors Semiconductors are crystalline structures in which each atom shares its valance electrons with the neighboring atoms. The simple
More informationUNIVERSITY OF PENNSYLVANIA EE 206
UNIVERSITY OF PENNSYLVANIA EE 206 TRANSISTOR BIASING CIRCUITS Introduction: One of the most critical considerations in the design of transistor amplifier stages is the ability of the circuit to maintain
More informationExperiment 8 Frequency Response
Experiment 8 Frequency Response W.T. Yeung, R.A. Cortina, and R.T. Howe UC Berkeley EE 105 Spring 2005 1.0 Objective This lab will introduce the student to frequency response of circuits. The student will
More informationElectronics 1. Lecture 4
Electronics 1 Lecture 4 Bipolar Junction Transistors. Structure, Characteristics, Basic Circuit Configurations, Biasing Literature 1. Tony R. Kuphaldt: Lessons In Electric Circuits, Volume II AC, 2007
More informationPhysics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017
Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain
More informationExperiment 6: Biasing Circuitry
1 Objective UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE105 Lab Experiments Experiment 6: Biasing Circuitry Setting up a biasing
More informationDC Bias. Graphical Analysis. Script
Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 3 Lecture Title: Analog Circuits
More informationLM125 Precision Dual Tracking Regulator
LM125 Precision Dual Tracking Regulator INTRODUCTION The LM125 is a precision, dual, tracking, monolithic voltage regulator. It provides separate positive and negative regulated outputs, thus simplifying
More informationLab 2: Discrete BJT Op-Amps (Part I)
Lab 2: Discrete BJT Op-Amps (Part I) This is a three-week laboratory. You are required to write only one lab report for all parts of this experiment. 1.0. INTRODUCTION In this lab, we will introduce and
More informationExperiment #8: Designing and Measuring a Common-Collector Amplifier
SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Experiment #8: Designing and Measuring a Common-Collector Amplifier
More informationAnalog Integrated Circuit Configurations
Analog Integrated Circuit Configurations Basic stages: differential pairs, current biasing, mirrors, etc. Approximate analysis for initial design MOSFET and Bipolar circuits Basic Current Bias Sources
More informationPHYS 3152 Methods of Experimental Physics I E2. Diodes and Transistors 1
Part I Diodes Purpose PHYS 3152 Methods of Experimental Physics I E2. In this experiment, you will investigate the current-voltage characteristic of a semiconductor diode and examine the applications of
More informationModule-1 BJT AC Analysis: The re Transistor Model. Common-Base Configuration
Module-1 BJT AC Analysis: BJT AC Analysis: BJT AC Analysis: BJT Transistor Modeling, The re transistor model, Common emitter fixed bias, Voltage divider bias, Emitter follower configuration. Darlington
More informationBIPOLAR JUNCTION TRANSISTOR (BJT) NOISE MEASUREMENTS 1
4. BIPOLAR JUNCTION TRANSISTOR (BJT) NOISE MEASUREMENTS 4.1 Object The objective of this experiment is to measure the mean-square equivalent input noise, v 2 ni, and base spreading resistance, r x, of
More informationTransistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018
Transistor Biasing DC Biasing of BJT Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com A transistors steady state of operation depends a great deal
More informationEEE225: Analogue and Digital Electronics
EEE225: Analogue and Digital Electronics Lecture I James E. Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Introduction This Lecture 1 Introduction Aims &
More informationEarly Effect & BJT Biasing
Early Effect & BJT Biasing Early Effect DC BJT Behavior DC Biasing the BJT 1 ESE319 Introduction to Microelectronics Early Effect Saturation region Forward-Active region 4 3 Ideal NPN BJT Transfer V Characteristic
More informationThe Difference Amplifier Sept. 17, 1997
Physics 63 The Difference Amplifier Sept. 17, 1997 1 Purpose To construct a difference amplifier, to measure the DC quiescent point and to compare to calculated values. To measure the difference mode gain,
More informationExperiment #7: Designing and Measuring a Common-Emitter Amplifier
SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Experiment #7: Designing and Measuring a Common-Emitter Amplifier
More informationEXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT
EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT 1. OBJECTIVES 1.1 To practice how to test NPN and PNP transistors using multimeter. 1.2 To demonstrate the relationship between collector current
More informationExperiment 6: Biasing Circuitry
1 Objective UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE105 Lab Experiments Experiment 6: Biasing Circuitry Setting up a biasing
More informationImproving Amplifier Voltage Gain
15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance
More informationUniversity of Michigan EECS 311: Electronic Circuits Fall 2008 LAB 4 SINGLE STAGE AMPLIFIER
University of Michigan EECS 311: Electronic Circuits Fall 2008 LAB 4 SINGLE STAGE AMPLIFIER Issued 10/27/2008 Report due in Lecture 11/10/2008 Introduction In this lab you will characterize a 2N3904 NPN
More informationSET - 1 Code No: II B. Tech II Semester Regular Examinations, April/May 2009
SET - 1 Code No: 3220401 II B. Tech II Semester Regular Examinations, April/May 2009 PULSE AND DIGITAL CIRCUITS ( Common to E.C.E, B.M.E, E.Con.E, I.C.E ) Time: 3 hours Max Marks: 80 Answer Any FIVE Questions
More informationBJT Circuits (MCQs of Moderate Complexity)
BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r
More informationINDIANA UNIVERSITY, DEPT. OF PHYSICS, P400/540 LABORATORY FALL Laboratory #5: More Transistor Amplifier Circuits
INDIANA UNIVERSITY, DEPT. OF PHYSICS, P400/540 LABORATORY FALL 2008 Laboratory #5: More Transistor Amplifier Circuits Goal: Use and measure the behavior of transistor circuits used to implement different
More information(a) BJT-OPERATING MODES & CONFIGURATIONS
(a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base
More informationDocument Name: Electronic Circuits Lab. Facebook: Twitter:
Document Name: Electronic Circuits Lab www.vidyathiplus.in Facebook: www.facebook.com/vidyarthiplus Twitter: www.twitter.com/vidyarthiplus Copyright 2011-2015 Vidyarthiplus.in (VP Group) Page 1 CIRCUIT
More informationGechstudentszone.wordpress.com
8.1 Operational Amplifier (Op-Amp) UNIT 8: Operational Amplifier An operational amplifier ("op-amp") is a DC-coupled high-gain electronic voltage amplifier with a differential input and, usually, a single-ended
More information55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.
Exam 3 Name: Score /65 Question 1 Unless stated otherwise, each question below is 1 point. 1. An engineer designs a class-ab amplifier to deliver 2 W (sinusoidal) signal power to an resistive load. Ignoring
More informationChapter Three " BJT Small-Signal Analysis "
Chapter Three " BJT Small-Signal Analysis " We now begin to examine the small-signal ac response of the BJT amplifier by reviewing the models most frequently used to represent the transistor in the sinusoidal
More informationLab 4. Transistor as an amplifier, part 2
Lab 4 Transistor as an amplifier, part 2 INTRODUCTION We continue the bi-polar transistor experiments begun in the preceding experiment. In the common emitter amplifier experiment, you will learn techniques
More information7. Bipolar Junction Transistor
41 7. Bipolar Junction Transistor 7.1. Objectives - To experimentally examine the principles of operation of bipolar junction transistor (BJT); - To measure basic characteristics of n-p-n silicon transistor
More informationChapter 7 EMITTER-COUPLED LOGIC
Chapter 7 EMITTER-COUPLED LOGIC The major speed limitation of TTL is the turn-off time of saturated transistors. To be sure, TTL has come a long way from the 100 ns time of DTL to the 2-4 ns propagation
More informationConcepts to be Covered
Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors
More informationElectronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 4 0 Bipolar Junction Transistors (BJT) Small Signal Analysis Graphical Analysis / Biasing Amplifier, Switch and Logic
More informationMini Project 3 Multi-Transistor Amplifiers. ELEC 301 University of British Columbia
Mini Project 3 Multi-Transistor Amplifiers ELEC 30 University of British Columbia 4463854 November 0, 207 Contents 0 Introduction Part : Cascode Amplifier. A - DC Operating Point.......................................
More informationES 330 Electronics II Homework # 1 (Fall 2016 SOLUTIONS)
SOLUTIONS ES 330 Electronics II Homework # 1 (Fall 2016 SOLUTIONS) Problem 1 (20 points) We know that a pn junction diode has an exponential I-V behavior when forward biased. The diode equation relating
More informationLM78S40 Switching Voltage Regulator Applications
LM78S40 Switching Voltage Regulator Applications Contents Introduction Principle of Operation Architecture Analysis Design Inductor Design Transistor and Diode Selection Capacitor Selection EMI Design
More informationHOME ASSIGNMENT. Figure.Q3
HOME ASSIGNMENT 1. For the differential amplifier circuit shown below in figure.q1, let I=1 ma, V CC =5V, v CM = -2V, R C =3kΩ and β=100. Assume that the BJTs have v BE =0.7 V at i C =1 ma. Find the voltage
More informationBJT AC Analysis CHAPTER OBJECTIVES 5.1 INTRODUCTION 5.2 AMPLIFICATION IN THE AC DOMAIN
BJT AC Analysis 5 CHAPTER OBJECTIVES Become familiar with the, hybrid, and hybrid p models for the BJT transistor. Learn to use the equivalent model to find the important ac parameters for an amplifier.
More informationCarleton University ELEC Lab 1. L2 Friday 2:30 P.M. Student Number: Operation of a BJT. Author: Adam Heffernan
Carleton University ELEC 3509 Lab 1 L2 Friday 2:30 P.M. Student Number: 100977570 Operation of a BJT Author: Adam Heffernan October 13, 2017 Contents 1 Transistor DC Characterization 3 1.1 Calculations
More informationHomework Assignment 12
Homework Assignment 12 Question 1 Shown the is Bode plot of the magnitude of the gain transfer function of a constant GBP amplifier. By how much will the amplifier delay a sine wave with the following
More informationR 1 R 2. (3) Suppose you have two ac signals, which we ll call signals A and B, which have peak-to-peak amplitudes of 30 mv and 600 mv, respectively.
29:128 Homework Problems 29:128 Homework 0 reference: Chapter 1 of Horowitz and Hill (1) In the circuit shown below, V in = 9 V, R 1 = 1.5 kω, R 2 = 5.6 kω, (a) Calculate V out (b) Calculate the power
More informationGATE SOLVED PAPER - IN
YEAR 202 ONE MARK Q. The i-v characteristics of the diode in the circuit given below are : v -. A v 0.7 V i 500 07 $ = * 0 A, v < 0.7 V The current in the circuit is (A) 0 ma (C) 6.67 ma (B) 9.3 ma (D)
More informationECE 310 Microelectronics Circuits
ECE 310 Microelectronics Circuits Bipolar Transistors Dr. Vishal Saxena (vishalsaxena@boisetstate.edu) Jan 20, 2014 Vishal Saxena 1 Bipolar Transistor n the chapter, we will study the physics of bipolar
More informationES330 Laboratory Experiment No. 9 Bipolar Differential Amplifier [Reference: Sedra/Smith (Chapter 9; Section 9.2; pp )]
ES330 Laboratory Experiment No. 9 Bipolar Differential Amplifier [Reference: Sedra/Smith (Chapter 9; Section 9.2; pp. 614-627)] Objectives: 1. Explore the operation of a bipolar junction transistor differential
More informationOperational Amplifiers
Operational Amplifiers Table of contents 1. Design 1.1. The Differential Amplifier 1.2. Level Shifter 1.3. Power Amplifier 2. Characteristics 3. The Opamp without NFB 4. Linear Amplifiers 4.1. The Non-Inverting
More informationECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model
Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand
More informationAudio, Dual-Matched NPN Transistor MAT12
Data Sheet FEATURES Very low voltage noise: nv/ Hz maximum at 00 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μv maximum Outstanding offset voltage drift: 0.03 μv/ C typical
More informationMini Project 2 Single Transistor Amplifiers. ELEC 301 University of British Columbia
Mini Project 2 Single Transistor Amplifiers ELEC 301 University of British Columbia 44638154 October 27, 2017 Contents 1 Introduction 1 2 Investigation 1 2.1 Part 1.................................................
More informationDesigning an Audio Amplifier Using a Class B Push-Pull Output Stage
Designing an Audio Amplifier Using a Class B Push-Pull Output Stage Angel Zhang Electrical Engineering The Cooper Union for the Advancement of Science and Art Manhattan, NY Jeffrey Shih Electrical Engineering
More informationBASIC ELECTRONICS PROF. T.S. NATARAJAN DEPT OF PHYSICS IIT MADRAS
BASIC ELECTRONICS PROF. T.S. NATARAJAN DEPT OF PHYSICS IIT MADRAS LECTURE-13 Basic Characteristic of an Amplifier Simple Transistor Model, Common Emitter Amplifier Hello everybody! Today in our series
More informationElectronic Devices, 9th edition Thomas L. Floyd. Input signal. R 1 and R 2 are selected to establish V B. If the V CE
3/9/011 lectronic Devices Ninth dition Floyd hapter 5: Transistor ias ircuits The D Operating Point ias establishes the operating point (Q-point) of a transistor amplifier; the ac signal (ma) moves above
More informationMidterm 2 Exam. Max: 90 Points
Midterm 2 Exam Name: Max: 90 Points Question 1 Consider the circuit below. The duty cycle and frequency of the 555 astable is 55% and 5 khz respectively. (a) Determine a value for so that the average current
More informationPhysics 160 Lecture 11. R. Johnson May 4, 2015
Physics 160 Lecture 11 R. Johnson May 4, 2015 Two Solutions to the Miller Effect Putting a matching resistor on the collector of Q 1 would be a big mistake, as it would give no benefit and would produce
More informationLinear Voltage Regulators Power supplies and chargers SMM Alavi, SBU, Fall2017
Linear Voltage Regulator LVRs can be classified based on the type of the transistor that is used as the pass element. The bipolar junction transistor (BJT), field effect transistor (FET), or metal oxide
More informationChapter 3 Bipolar Junction Transistors (BJT)
Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,
More informationChapter Two "Bipolar Transistor Circuits"
Chapter Two "Bipolar Transistor Circuits" 1.TRANSISTOR CONSTRUCTION:- The transistor is a three-layer semiconductor device consisting of either two n- and one p-type layers of material or two p- and one
More informationET215 Devices I Unit 4A
ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic
More information(Refer Slide Time: 05:47)
Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 29 Bipolar Junction Transistor (Contd ) So we have been discussing
More informationEE 332 Design Project
EE 332 Design Project Variable Gain Audio Amplifier TA: Pohan Yang Students in the team: George Jenkins Mohamed Logman Dale Jackson Ben Alsin Instructor s Comments: Lab Grade: Introduction The goal of
More informationECEN 325 Lab 7: Characterization and DC Biasing of the BJT
ECEN 325 Lab 7: Characterization and DC Biasing of the BJT 1 Objectives The purpose of this lab is to characterize NPN and PNP bipolar junction transistors (BJT), and to analyze and design DC biasing circuits
More informationExercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)
Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Recapitulation and Equivalent Circuit Models Previous slides present first order BJT model. Assumes npn transistor in active mode. Basic relationship
More informationApplication Note 1293
A omparison of Various Bipolar Transistor Biasing ircuits Application Note 1293 Introduction The bipolar junction transistor (BJT) is quite often used as a low noise amplifier in cellular, PS, and pager
More informationSAMPLE FINAL EXAMINATION FALL TERM
ENGINEERING SCIENCES 154 ELECTRONIC DEVICES AND CIRCUITS SAMPLE FINAL EXAMINATION FALL TERM 2001-2002 NAME Some Possible Solutions a. Please answer all of the questions in the spaces provided. If you need
More information(Refer Slide Time: 01:33)
Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 31 Bipolar Junction Transistor (Contd ) So, we have been discussing
More informationBIPOLAR JUNCTION TRANSISTORS (BJTs) Dr Derek Molloy, DCU
IPOLAR JUNCTION TRANSISTORS (JTs) Dr Derek Molloy, DCU What are JTs? Two PN junctions joined together is a JT Simply known as a transistor! ipolar? Current carried by electrons and holes Will see FETs
More informationTransistor Biasing and Operational amplifier fundamentals. OP-amp Fundamentals and its DC characteristics. BJT biasing schemes
Lab 1 Transistor Biasing and Operational amplifier fundamentals Experiment 1.1 Experiment 1.2 BJT biasing OP-amp Fundamentals and its DC characteristics BJT biasing schemes 1.1 Objective 1. To sketch potential
More informationPaper-1 (Circuit Analysis) UNIT-I
Paper-1 (Circuit Analysis) UNIT-I AC Fundamentals & Kirchhoff s Current and Voltage Laws 1. Explain how a sinusoidal signal can be generated and give the significance of each term in the equation? 2. Define
More informationLinear IC s and applications
Questions and Solutions PART-A Unit-1 INTRODUCTION TO OP-AMPS 1. Explain data acquisition system Jan13 DATA ACQUISITION SYSYTEM BLOCK DIAGRAM: Input stage Intermediate stage Level shifting stage Output
More informationChapter 5 Transistor Bias Circuits
Chapter 5 Transistor Bias Circuits Objectives Discuss the concept of dc biasing of a transistor for linear operation Analyze voltage-divider bias, base bias, and collector-feedback bias circuits. Basic
More informationUNIT I BIASING OF DISCRETE BJT AND MOSFET PART A
UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A 1. Why do we choose Q point at the center of the load line? 2. Name the two techniques used in the stability of the q point.explain. 3. Give the expression
More informationOperational amplifiers
Operational amplifiers Bởi: Sy Hien Dinh INTRODUCTION Having learned the basic laws and theorems for circuit analysis, we are now ready to study an active circuit element of paramount importance: the operational
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS Most of the content is from the textbook: Electronic devices and circuit theory,
More information(b) 25% (b) increases
Homework Assignment 07 Question 1 (2 points each unless noted otherwise) 1. In the circuit 10 V, 10, and 5K. What current flows through? Answer: By op-amp action the voltage across is and the current through
More informationGeorgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam
Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number
More informationELT 215 Operational Amplifiers (LECTURE) Chapter 5
CHAPTER 5 Nonlinear Signal Processing Circuits INTRODUCTION ELT 215 Operational Amplifiers (LECTURE) In this chapter, we shall present several nonlinear circuits using op-amps, which include those situations
More informationExercise 2: Collector Current Versus Base Current
Exercise 2: Collector Current Versus Base Current EXERCISE OBJECTIVE When you have completed this exercise, you will be able to demonstrate the relationship of collector current to base current by using
More informationI C I E =I B = I C 1 V BE 0.7 V
Guide to NPN Amplifier Analysis Jason Woytowich 1. Transistor characteristics A BJT has three operating modes cutoff, active, and saturation. For applications, like amplifiers, where linear characteristics
More informationTransistor Characteristics
Transistor Characteristics Introduction Transistors are the most recent additions to a family of electronic current flow control devices. They differ from diodes in that the level of current that can flow
More informationITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections
ITT Technical Institute ET215 Devices 1 Unit 6 Chapter 3, Sections 3.7-3.9 Chapter 3 Section 3.7 The Bipolar Transistor as a Switch Objectives: Explain how a transistor can be used as a switch 1. Compute
More informationBiasing of BJT IENGINEERS- CONSULTANTS LECTURE NOTES SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU. Page 1
HTTP://NGNS.N/ NGNS- ONSULTANTS LTU NOTS SS LTONS NGNNG 1 YA UPTU iasing of JT As we know that JT can be operated in three regions: active, saturation and cutoff by applying proper voltage condition. n
More informationLM389 Low Voltage Audio Power Amplifier with NPN Transistor Array
LM389 Low Voltage Audio Power Amplifier with NPN Transistor Array General Description The LM389 is an array of three NPN transistors on the same substrate with an audio power amplifier similar to the LM386
More information