NCP3334. High Accuracy, Ultra Low Iq, 500 ma Adjustable Low Dropout Regulator
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1 High Accuracy, Ultra Low Iq, 5 ma Adjustable Low Dropout Regulator The NCP333 is a high performance, low dropout regulator. With accuracy of ±.9% over line and load and ultra low quiescent current and noise it encompasses all of the necessary features required by today s consumer electronics. This unique device is guaranteed to be stable without a minimum load current requirement and stable with any type of capacitor as small as 1. F. The NCP333 offers reverse bias protection. Features High Accuracy Over Line and Load (±.9% at 25 C) Ultra Low Dropout oltage Low Noise Low Shutdown Current (.7 A) Reverse Bias Protected 2.6 to 12 Supply Range Thermal Shutdown Protection Current Limitation Requires Only 1. F Output Capacitance for Stability Stable with Any Type of Capacitor (including MLCC) No Minimum Output Current Required for Stability This is a Pb Free Device 1 A L Y W SOIC CASE 751 = Assembly Location = Wafer Lot = Year = Work Week = Pb Free Package P CONNECTIONS 1 GND NC SD FB MARKG DIAGRAM ALYW Applications PCMCIA Card Cellular Phones Camcoders and Cameras Networking Systems, DSL/Cable Modems Cable Set Top Box MP3/CD Players DSP Supply Displays and Monitors ORDERG FORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 26 April, 26 Rev. 2 1 Publication Order Number: NCP333/D
2 6 in C in 1. F + 3 FB SD GND R1 R2 C ADJ 6 pf C out 1. F + out OFF ON Figure 1. Typical Adjustable ersion Application Schematic P FUNCTION DESCRIPTION Pin No. Pin Name Description 1 GND Power Supply Ground 2 SD Shutdown pin. When not in use, this pin should be connected to the input pin. 3, Power Supply Input oltage 5, 6 Regulated output voltage. Bypass to ground with C out 1. F. 7 FB Feedback pin; reference voltage = NC Not Connected MAXIMUM RATGS Rating Symbol alue Unit Input oltage in.3 to +16 Output oltage out.3 to in +.3 or 1 * Shutdown Pin oltage sh.3 to +16 Thermal Characteristics Thermal Resistance, Junction to Air R JA 23 C/W Operating Junction Temperature Range T J to +15 C Storage Temperature Range T stg 5 to+15 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) JESD 22 A11 B Machine Model (MM) JESD 22 A115 A *Whichever is less. Reverse bias protection feature valid only if out in 7.. 2
3 ELECTRICAL CHARACTERISTICS ( out = 1.25 ( ref ) typical, in = 2.9, T A = C to +5 C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Reference oltage Accuracy in = 2.9 to out +., I L =.1 ma to 5 ma, T A = 25 C REF.9% % Reference oltage Accuracy in = 2.9 to out +., I L =.1 ma to 5 ma, T A = C to +5 C REF 1.% % 1.26 Reference oltage Accuracy (Note 1) in = 2.9 to out +., I L =.1 ma to 5 ma, T A = C to +15 C REF 1.5% % Line Regulation in = 2.9 to 12, I L =.1 ma Load Regulation in = 2.9, I L =.1 ma to 5 ma Line Reg. m/ Load Reg. m/ma Dropout oltage, out = 2.5 to 1 I L = 5 ma (Note 2) I L = 3 ma I L = 5 ma I L =.1 ma Drop Peak Output Current (Notes 1 and 2) (See Figure 6) Ipk ma Short Output Current (See Figure 6) out 3.3 out > 3.3 I sc 99 Thermal Shutdown T JSD 16 C 9 13 m ma Ground Current In Regulation I L = 5 ma (Note 2) I L = 3 ma (Note 2) I L = 5 ma I L =.1 ma I GND ma A In Dropout in = out.1, I L =.1 ma 5 A In Shutdown SD = Output Noise I L = 5 ma, f = 1 Hz to 1 khz, C out = 1 F I GNDsh.7 1. A noise 3 rms Shutdown Threshold oltage ON Threshold oltage OFF THSD 2.. SD Input Current, SD = to. or SD = 2. to in in 5. in > 5. I SD A Output Current In Shutdown Mode, out = I OSD.7 1. A Reverse Bias Protection, Current Flowing from the Output Pin to GND ( in =, out_forced = out (nom) 7 ) (Note 3) I R 1. A RECOMMENDED OPERATG CONDITIONS Input oltage For output current capability for T J < C, please refer to Figure. 2. T A must be greater than C. 3. Reverse bias protection feature valid only if out in 7.. 3
4 DO (m) ma 25 3 ma ma Figure 2. Dropout oltage vs. Temperature I GND (ma) ma 3 ma 5 ma Figure 3. Ground Current vs. Temperature () Figure. Output oltage vs. Temperature I pk (ma), I sc (ma) I sc I pk Figure 5. Peak and Short Current vs. Temperature 1.97 out out () RR, RIPPLE REJECTION (db) ma out = 2.5 C out = 1 F T J = 25 C 5 ma 5 ma I out (ma) I pk I sc (For specific values of I pk and I sc, please refer to Figure 5) Figure 6. Output oltage vs. Output Current F, FREQUENCY (khz) Figure 7. Ripple Rejection vs. Frequency
5 . 15 I, (A) C 3 C C 2 C 1 C MAXIMUM ESR ( ) 1 5. in at Data Sheet Test Conditions, 25 C, 1 F Capacitance Unstable Area Stable Area 2 3 5, () PUT CURRENT (ma) Figure. Output Current Capability when set at 2.5 out Figure 9. Stability with ESR vs. I out 5
6 APPLICATIONS FORMATION Reverse Bias Protection Reverse bias is a condition caused when the input voltage goes to zero, but the output voltage is kept high either by a large output capacitor or another source in the application which feeds the output pin. Normally in a bipolar LDO all the current will flow from the output pin to input pin through the PN junction with limited current capability and with the potential to destroy the IC. Due to an improved architecture, the NCP333 can withstand up to 7. on the output pin with virtually no current flowing from output pin to input pin, and only negligible amount of current (tens of A) flowing from the output pin to ground for infinite duration. Operation with output voltages in the range of 7 to 1 volts requires that the output to input voltage differential be less than 7 volts. Input Capacitor An input capacitor of at least 1. F, any type, is recommended to improve the transient response of the regulator and/or if the regulator is located more than a few inches from the power source. It will also reduce the circuit s sensitivity to the input line impedance at high frequencies. The capacitor should be mounted with the shortest possible track length directly across the regulator s input terminals. Output Capacitor The NCP333 remains stable with any type of capacitor as long as it fulfills its 1. F requirement. There are no constraints on the minimum ESR and it will remain stable up to an ESR of 5.. Larger capacitor values will improve the noise rejection and load transient response. Noise Reduction A 6 pf capacitor connected in parallel with R1 (see Figure 1) is recommended to reduce output noise and improve stability. Adjustable Operation The output voltage can be set by using a resistor divider as shown in Figure 1 with a range of 1.25 to 1. The appropriate resistor divider can be found by solving the equation below. The recommended current through the resistor divider is from 1 A to 1 A. This can be accomplished by selecting resistors in the k range. As result, the I adj *R2 becomes negligible in the equation and can be ignored. out 1.25 * 1 R1 R2 I adj *R2 (eq. 1) Example: For out = 2.9, can use R 1 = 36 k and R 2 = 27 k * 1 36 k 27 k 2.91 (eq. 2) Dropout oltage The voltage dropout is measured at 97% of the nominal output voltage. Thermal Considerations Internal thermal limiting circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. This feature provides protection from a catastrophic device failure due to accidental overheating. This protection feature is not intended to be used as a substitute to heat sinking. The maximum power that can be dissipated, can be calculated with the equation below: PD T J(max) TA (eq. 3) R JA For improved thermal performance, contact the factory for the DFN package option. The DFN package includes an exposed metal pad that is specifically designed to reduce the junction to air thermal resistance, R JA. ORDERG FORMATION NCP333DADJG NCP333DADJR2G Device Package Shipping SO (Pb Free) SO (Pb Free) 9 Units / Rail 25 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD11/D. 6
7 PACKAGE DIMENSIONS X B Y 1 A 5 S.25 (.1) M Y M SOIC CASE ISSUE AH K NOTES: 1. DIMENSIONG AND TOLERANCG PER ANSI Y1.5M, CONTROLLG DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT CLUDE MOLD PROTRUSION.. MAXIMUM MOLD PROTRUSION.15 (.6) PER SIDE. 5. DIMENSION D DOES NOT CLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.127 (.5) TOTAL EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION THRU ARE OBSOLETE. NEW STANDARD IS Z H G D C.25 (.1) M Z Y S X S SEATG PLANE.1 (.) N X 5 M J MILLIMETERS CHES DIM M MAX M MAX A B C D G 1.27 BSC.5 BSC H J K M N S SOLDERG FOOTPRT* SCALE 6:1 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. The products described herein NCP333, may be covered by one or more of the following U.S. patents; 5,92,1, 5,966,, and 5,3,926. There may be other patents pending. Micro is a trademark of International Rectifier. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERG FORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona USA Phone: or 3 36 Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Kamimeguro, Meguro ku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NCP333/D
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Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
MMQA Quad Common Anode Series Preferred Devices. SC 74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA Quad Common Anode Series Preferred Devices SC 74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
1PMT5.0AT1/T3 Series. Zener Transient Voltage Suppressor POWERMITE Package
Zener Transient Voltage Suppressor Package The is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low Zener
BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector
NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
NCP ma, 10 V, Low Dropout Regulator
ma, V, Low Dropout Regulator The NCP6 is a CMOS Linear voltage regulator with ma output current capability. The device is capable of operating with input voltages up to V, with high output voltage accuracy
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package
MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive
NLAS323. Dual SPST Analog Switch, Low Voltage, Single Supply A4 D
Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS323 is a dual SPST (Single Pole, Single Throw) switch, similar to /2 a standard 466. The device permits the independent selection of 2 analog/digital
NCP ma, Dual Rail Ultra Low Dropout Linear Regulator
4 ma, Dual Rail Ultra Low Dropout Linear Regulator The NCP467 is a CMOS Dual Supply Rail Linear Regulator designed to provide very low output voltages. The Dual Rail architecture which separates the power
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
NTJS3151P. Trench Power MOSFET. 12 V, 3.3 A, Single P Channel, ESD Protected SC 88
NTJS5P Trench Power MOSFET V,. A, Single P Channel, ES Protected SC 88 Features Leading Trench Technology for Low R S(ON) Extending Battery Life SC 88 Small Outline (x mm, SC7 Equivalent) Gate iodes for
MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers
MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
NL27WZ17. Dual Non-Inverting Schmitt Trigger Buffer
Dual Non-Inverting Schmitt Trigger Buffer The N7WZ7 is a high performance dual buffer operating from a to supply. At =, high impedance TT compatible inputs significantly reduce current loading to input
NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of
NTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package
NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry
CMPWR ma SmartOR Regulator with V AUX Switch
50 ma SmartOR Regulator with Switch Product Description The ON Semiconductor s SmartOR is a low dropout regulator that delivers up to 50 ma of load current at a fixed 3.3 V output. An internal threshold
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint