NCP ma, Dual Rail Ultra Low Dropout Linear Regulator
|
|
- Rose Poole
- 6 years ago
- Views:
Transcription
1 4 ma, Dual Rail Ultra Low Dropout Linear Regulator The NCP467 is a CMOS Dual Supply Rail Linear Regulator designed to provide very low output voltages. The Dual Rail architecture which separates the power for the LDO control circuitry (provided via the Vbias pin) from the main power path (Vin) offers ultra low dropout performance, allowing the device to operate from input voltages down to.9 V and to generate a fixed high accuracy output voltage as low as.6 V. The NCP467 offers excellent transient response with very low quiescent currents. The family is available in a variety of packages: SC 7, SOT23 and a small, ultra thin.2 x.2 x.4mm XDFN. Features Bias Supply Voltage Range : 2.4 V to 5.25 V (V OUT <.8 V) Set V OUT +.6 V to 5.25 V (V OUT.8 V) Power Input Voltage Range :.9 V to V BIAS (V OUT <.8 V) Set V OUT +. V to V BIAS (V OUT.8 V) Output Voltage Range:.6 to.5 V (available at. steps) Very Low Dropout: 8 mv Typ. at 4 ma Quiescent Current: 28 A Standby Current:. A ±5 mv Output Voltage Accuracy (T A = 25 C) High PSRR: 8 db at khz (Ripple at VIN) 5 db at khz (Ripple at VBIAS) Current Fold Back Protection Typ. 2 ma Available in XDFN, SC 7, SOT23 Package These are Pb Free Devices Typical Applications Battery Powered Equipments Portable Communication Equipments Cameras, VCRs and Camcorders VIN DC/DC converter C C2 VIN CE NCP467x VBIAS GND VOUT VOUT C3 2 2 SC 7 CASE 49A (In Development) XDFN6 CASE 7AA SOT 23 5 CASE 22 XX, XXX= Specific Device Code M, MM = Date Code A = Assembly Location Y = Year W = Work Week = Pb Free Package MARKING DIAGRAMS ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 2 of this data sheet. (*Note: Microdot may be in either location) XXX XMM XX MM XXXMM Figure. Typical Application Schematic Semiconductor Components Industries, LLC, 22 February, 22 Rev. 2 Publication Order Number: NCP467/D
2 NCP467Hxxxxxxxx NCP467Dxxxxxxxx VBIAS VBIAS VIN VOUT VIN VOUT Vref Vref UVLO Current Limit UVLO Current Limit CE GND CE GND Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. XDFN Pin No. SC 7 Pin No. SOT23 Pin Name Description 4 VBIAS Input Pin GND Ground Pin CE Chip Enable Pin ( H Active) 4 4 VIN Input Pin 2 5 NC Not connected VOUT Output Pin ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Bias Supply Input Voltage (Note ) V BIAS 6. V Power Supply Input Voltage (for Driver) (Note ) V IN.3 to VBIAS +.3 V Output Voltage VOUT.3 to VIN +.3 V Chip Enable Input VCE 6. V Output Current I OUT 5 ma Power Dissipation XDFN P D 4 mw Power Dissipation SC 7 38 Power Dissipation SOT23 42 Maximum Junction Temperature T J(MAX) 5 C Storage Temperature T STG 55 to 25 C ESD Capability, Human Body Model (Note 2) ESD HBM 2 V ESD Capability, Machine Model (Note 2) ESD MM 2 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC Q 2 (EIA/JESD22 A4) ESD Machine Model tested per AEC Q 3 (EIA/JESD22 A5) Latchup Current Maximum Rating tested per JEDEC standard: JESD78. 2
3 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Characteristics, XDFN Thermal Resistance, Junction to Air Thermal Characteristics, SOT23 Thermal Resistance, Junction to Air Thermal Characteristics, SC 7 Thermal Resistance, Junction to Air R JA 25 C/W R JA 238 C/W R JA 263 C/W ELECTRICAL CHARACTERISTICS 4 C T A 85 C, V BIAS = V CE = 3.6 V, V IN = V OUT(NOM) +.5 V,, C BIAS = C IN =. F, C OUT = 2.2 F, unless otherwise noted. Typical values are at T A = +25 C. Parameter Test Conditions Symbol Min Typ Max Unit Operating Supply Input Voltage (Note 3) Operating Power Input Voltage (Note 3) V OUT <.8 V VBIAS V V OUT.8 V V OUT V OUT <.8 V VIN.9 VBIAS V V OUT.8 V V OUT +. VBIAS Output Voltage TA = +25 C VOUT 5 +5 mv TA = 4 C to +85 C 2 +2 Output Voltage Temp. Coefficient T A = 4 C to +85 C ±5 ppm/ C Line Regulation V BIAS = 2.4V to 5.V Line Reg.2. %/V V IN = VOUT +.3 V to 2.4 V.2. Load Regulation IOUT = ma to 4 ma Load Reg 3 5 mv Dropout Voltage Please refer to following detailed table. Output Current IOUT 4 ma Short Current Limit V OUT = V I SC 2 ma Quiescent Current IOUT = ma IQ 28 4 A Standby Current V CE = V, T A = 25 C ISTB. 3 A CE Pin Threshold Voltage CE Input Voltage H VCEH.8 V CE Input Voltage L VCEL.3 CE Pull Down Current IPD A VIN Under Voltage Lock Out I OUT = A V IN_UVLO V OUT +.5 V OUT +. Power Supply Rejection Ratio I OUT = 3 ma, f = khz, V IN Ripple.2 V P P PSRR 8 db I OUT = 3 ma, f = khz, V BIAS Ripple.2 V P P 5 V Output Noise Voltage V OUT =.6 V, I OUT = 3 ma, f = Hz to khz VN 7 V rms Low Output Nch Tr. On Resistance D only, V BIAS = 3.6 V, V CE = L R LOW 5 3. If Input Voltage range is between 5.25 V and 5.5 V, the total operational time must be within 5 hrs. 3
4 DROPOUT VOLTAGE (V DO [V]) V OUT / V BIAS V DO I OUT = 2 ma (T A = 25 C) V DO I OUT = 3 ma T A = 25 C T A = 4 C to +85 C V DO I OUT = 4 ma T A = 25 C T A = 4 C to +85 C 2.5 V 3. V 3.3 V 3.6 V 4.2 V 5. V 3.6 V 3.6 V 3.6 V 3.6 V.6 V V V V V V V * V V * *VBIAS voltage must be equal or more than V OUT(NOM) +.6 V 4
5 V IN =.79 V V BIAS = 2.4 V. V 2.4 V V IN =.79 V. V V BIAS = 3.6 V 3.6 V I OUT, OUTPUT CURRENT (ma) Figure 3. Output Voltage vs. Output Current.6 V (T A = 25 C) I OUT, OUTPUT CURRENT (ma) Figure 4. Output Voltage vs. Output Current.6 V (T A = 25 C) V V IN =.79 V V BIAS = 5.25 V. V V BIAS = 2.6 V V IN =.22 V.5 V 2.6 V I OUT, OUTPUT CURRENT (ma) Figure 5. Output Voltage vs. Output Current.6 V (T A = 25 C) I OUT, OUTPUT CURRENT (ma) Figure 6. Output Voltage vs. Output Current. V (T A = 25 C).2 V BIAS = 3.6 V.2 V BIAS = 5.25 V V IN =.22 V.5 V 3.6 V V IN =.22 V.5 V 5.25 V I OUT, OUTPUT CURRENT (ma) Figure 7. Output Voltage vs. Output Current. V (T A = 25 C) I OUT, OUTPUT CURRENT (ma) Figure 8. Output Voltage vs. Output Current. V (T A = 25 C) 5
6 V IN =.76 V 2. V.2 V BIAS = 3. V I OUT, OUTPUT CURRENT (ma) 3. V Figure 9. Output Voltage vs. Output Current.5 V (T A = 25 C) V IN =.72 V 2. V.2 V BIAS = 3.6 V I OUT, OUTPUT CURRENT (ma) 3.6 V Figure. Output Voltage vs. Output Current.5 V (T A = 25 C) V IN =.76 V 2. V 5.25 V.2 V BIAS = 5.25 V ma 5 ma V BIAS = 2.4 V I OUT, OUTPUT CURRENT (ma) Figure. Output Voltage vs. Output Current.5 V (T A = 25 C) V IN, INPUT VOLTAGE (V) Figure 2. Output Voltage vs. Input Voltage.6 V (T A = 25 C) ma 5 ma V BIAS = 3.6 V ma 5 ma V BIAS = 5.25 V V IN, INPUT VOLTAGE (V) V IN, INPUT VOLTAGE (V) Figure 3. Output Voltage vs. Input Voltage.6 V (T A = 25 C) Figure 4. Output Voltage vs. Input Voltage.6 V (T A = 25 C) 6
7 ma 5 ma V IN, INPUT VOLTAGE (V) V BIAS = 2.6 V Figure 5. Output Voltage vs. Input Voltage. V (T A = 25 C) ma 5 ma V IN, INPUT VOLTAGE (V) V BIAS = 3.2 V Figure 6. Output Voltage vs. Input Voltage. V (T A = 25 C) ma 5 ma V BIAS = 5.25 V V IN, INPUT VOLTAGE (V) Figure 7. Output Voltage vs. Input Voltage. V (T A = 25 C) ma 5 ma.2 V BIAS = 3. V V IN, INPUT VOLTAGE (V) Figure 8. Output Voltage vs. Input Voltage.5 V (T A = 25 C) ma 5 ma V BIAS = 3.6 V V IN, INPUT VOLTAGE (V) Figure 9. Output Voltage vs. Input Voltage.5 V (T A = 25 C) ma 5 ma V IN, INPUT VOLTAGE (V) V BIAS = 5.25 V Figure 2. Output Voltage vs. Input Voltage.5 V (T A = 25 C) 7
8 ma 5 ma ma 5 ma V BIAS, BIAS VOLTAGE (V).6 Figure 2. Output Voltage vs. Bias Voltage.6 V (T A = 25 C) V BIAS, BIAS VOLTAGE (V) Figure 22. Output Voltage vs. Bias Voltage. V (T A = 25 C) ma 3 ma V BIAS, BIAS VOLTAGE (V) Figure 23. Output Voltage vs. Bias Voltage.5 V (T A = 25 C) T J, JUNCTION TEMPERATURE ( C) Figure 24. Output Voltage vs. Temperature.6 V T J, JUNCTION TEMPERATURE ( C) Figure 25. Output Voltage vs. Temperature. V T J, JUNCTION TEMPERATURE ( C) Figure 26. Output Voltage vs. Temperature.5 V 8
9 4 I q, QUIECENT CURRENT ( A) V BIAS = 2.4 V 5.25 V 3.6 V I q, QUIECENT CURRENT ( A) V BIAS = 2.4 V 5.25 V 3.6 V V IN, INPUT VOLTAGE (V) Figure 27. Quiescent Current vs. Input Voltage.6 V V IN, INPUT VOLTAGE (V) Figure 28. Quiescent Current vs. Input Voltage. V I q, QUIECENT CURRENT ( A) V BIAS = 2.4 V 5.25 V 3.6 V SUPPLY CURRENT ( A) V BIAS = 3.6 V V IN =. V V IN, INPUT VOLTAGE (V) Figure 29. Quiescent Current vs. Input Voltage.5 V T J, JUNCTION TEMPERATURE ( C) Figure 3. Supply Current vs. Temperature.6 V SUPPLY CURRENT ( A) V BIAS = 3.6 V V IN =.5 V SUPPLY CURRENT ( A) V BIAS = 3.6 V V IN = 2. V T J, JUNCTION TEMPERATURE ( C) Figure 3. Supply Current vs. Temperature. V T J, JUNCTION TEMPERATURE ( C) Figure 32. Supply Current vs. Temperature.5 V 9
10 2 2 V DO, DROPOUT VOLTAGE (mv) T J = 85 C 4 C 25 C V DO, DROPOUT VOLTAGE (mv) C T J = 85 C 25 C I OUT, OUTPUT CURRENT (ma) Figure 33. Dropout Voltage vs. Output Current.6 V I OUT, OUTPUT CURRENT (ma) Figure 34. Dropout Voltage vs. Output Current. V V DO, DROPOUT VOLTAGE (mv) T J = 85 C 4 C 25 C I OUT, OUTPUT CURRENT (ma) Figure 35. Dropout Voltage vs. Output Current.5 V PSRR (db) ma 3 ma 2 V IN =. V + 2 mv PP modulation, V BIAS = 3.6 V, C BIAS = F k k k M M FREQUENCY (Hz) Figure 36. PSRR vs. Frequency.6 V PSRR (db) ma 2 V IN =.5 V + 2 mv PP modulation, V BIAS = 3.6 V, C BIAS = F k k k M M FREQUENCY (Hz) Figure 37. PSRR vs. Frequency. V PSRR (db) ma 2 V IN = 2. V + 2 mv PP modulation, V BIAS = 3.6 V, C BIAS = F k k k M M FREQUENCY (Hz) Figure 38. PSRR vs. Frequency.5 V
11 PSRR (db) ma 2 V IN =. V, C IN = 2.2 F, 5 ma V BIAS = 3.6 V + 2 mv PP modulation k k k M M FREQUENCY (Hz) Figure 39. PSRR vs. Frequency.6 V 8 3 ma PSRR (db) V IN =.5 V, C IN = 2.2 F, 5 ma V BIAS = 3.6 V + 2 mv PP modulation k k k M M FREQUENCY (Hz) Figure 4. PSRR vs. Frequency. V PSRR (db) ma 2 V IN = 2. V, C IN = 2.2 F, V BIAS = 3.6 V + 2 mv PP modulation k k k M M FREQUENCY (Hz) 3 ma Figure 4. PSRR vs. Frequency.5 V
12 V IN =. V, C IN = 2.2 F, V BIAS = Step 2.4 V to 3.6 V t ( s) Figure 42. Line Transients Response,.6 V V BIAS (V) V IN =.5 V, C IN = 2.2 F,.96 V BIAS = Step 2.4 V to 3.6 V t ( s) Figure 43. Line Transients Response,. V V BIAS (V) V IN = 2. V, C IN = 2.2 F, V BIAS = Step 2.4 V to 3.6 V t ( s) Figure 44. Line Transients Response,.5 V V BIAS (V) 2
13 V.596 IN = Step. V to 2. V, V BIAS = 3.6 V, C BIAS = F t ( s) Figure 45. Line Transients Response,.6 V V IN (V) V IN = Step.5 V to 2.5 V,.996 V BIAS = 3.6 V, C BIAS = F t ( s) Figure 46. Line Transients Response,. V V IN (V) V IN = Step 2. V to 3. V,.496 V BIAS = 3.6 V, C BIAS = F t ( s) Figure 47. Line Transients Response,.5 V V IN (V) 3
14 V.56 IN =. V, V BIAS = 3.6 V, C IN = 2.2 F, C BIAS = F t (ms) Figure 48. Load Transients Response,.6 V, I OUT Step ma to 4 ma I OUT (ma) V IN =.5 V, V BIAS = 3.6 V,.96 C IN = 2.2 F, C BIAS = F t (ms) Figure 49. Load Transients Response,. V, I OUT Step ma to 4 ma I OUT (ma) V IN = 2. V, V BIAS = 3.6 V, C IN = 2.2 F, C BIAS = F t (ms) Figure 5. Load Transients Response,.5 V, I OUT Step ma to 4 ma I OUT (ma) 4
15 V.59 IN =. V, V BIAS = 3.6 V, C IN = 2.2 F, C BIAS = F t (ms) Figure 5. Load Transients Response,.6 V, I OUT Step 5 ma to ma I OUT (ma) V.99 IN =.5 V, V BIAS = 3.6 V, C IN = 2.2 F, C BIAS = F t (ms) Figure 52. Load Transients Response,. V, I OUT Step 5 ma to ma I OUT (ma) V IN = 2. V, V BIAS = 3.6 V, C IN = 2.2 F, C BIAS = F t (ms) Figure 53. Load Transients Response,.5 V, I OUT Step 5 ma to ma I OUT (ma) 5
16 V IN I OUT = 3 ma V IN (V).4.2 I OUT = 25 ma. V BIAS = V CE = 3.6 V, C OUT = 2.2 F t ( s) Figure 54. Turn On Behavior,.6 V 2.25 V IN.5 I OUT = 4 ma V IN (V).4.2. I OUT = 3 ma V BIAS = V CE = 3.6 V, C OUT = 2.2 F t ( s) Figure 55. Turn On Behavior,. V V IN I OUT = 3 ma V IN (V)..5. I OUT = 4 ma V BIAS = V CE = 3.6 V, C OUT = 2.2 F t ( s) Figure 56. Turn On Behavior,.5 V 6
17 Chip Enable I OUT = 3 ma I OUT = 25 ma V IN =. V, V BIAS = 3.6 V, C IN = C OUT = 2.2 F, C BIAS = F t ( s) Figure 57. Turn On Behavior with CE,.6 V V CE (V) Chip Enable I OUT = 3 ma I OUT = 4 ma.8 V CE (V).2. V IN =.5 V, V BIAS = 3.6 V, C IN = C OUT = 2.2 F, C BIAS = F t ( s) Figure 58. Turn On Behavior with CE,. V Chip Enable I OUT = 3 ma I OUT = 4 ma V IN = 2.5 V, V BIAS = 3.6 V, C IN = C OUT = 2.2 F, C BIAS = F t ( s) Figure 59. Turn On Behavior with CE,.5 V V CE (V) 7
18 V IN =. V, V BIAS = 3.6 V, C IN = C OUT = 2.2 F, C BIAS = F Chip Enable.6 V CE (V).4 I OUT = 3 ma.2. I OUT = 25 ma t (ms) Figure 6. Turn Off Behavior with CE,.6 V V IN =. V, V BIAS = 3.6 V, C IN = C OUT = 2.2 F, C BIAS = F Chip Enable V CE (V).4 I OUT = 3 ma.2. I OUT = 4 ma t (ms) Figure 6. Turn Off Behavior with CE,. V V IN = 2. V, V BIAS = 3.6 V, C IN = C OUT = 2.2 F, C BIAS = F Chip Enable 2..5 V CE (V). I OUT = 3 ma.5. I OUT = 4 ma t (ms) Figure 62. Turn Off Behavior with CE,.5 V 8
19 APPLICATION INFORMATION A typical application circuit for the NCP467 series is shown in Figure 63. The NCP467 has two independent inputs, VBIAS pin is used for powering control part of the LDO and its value is equal or higher than value of second input pin VIN where voltage that has to be regulated is connected. VIN VBIAS C C2 VIN VBIAS CE NCP467x GND VOUT C3 2 2 Figure 63. Typical Application Schematic VOUT Dual rail architecture is appropriate when the regulator is connected for example behind a buck DC/DC converter. Bias voltage can be taken from input of the buck DC/DC converter and as input voltage is used output of the buck DC/DC converter as it is shown in Figure 64. Condition that bias voltage must be higher than input voltage can be in this schematic easy fulfilled. VIN DC/DC converter C C2 NCP467x VIN VBIAS VOUT CE GND VOUT C3 2 2 Figure 64. Typical Application Schematic with DC/DC Converter Input Decoupling Capacitors (C and C2) A F ceramic input decoupling capacitors should be connected as close as possible to the VIN and VBIAS input and ground pin of the NCP467. Higher values and lower ESR of capacitor C improves line transient response. Output Decoupling Capacitor (C3) A 2.2 F or larger ceramic output decoupling capacitor is sufficient to achieve stable operation of the IC. If a tantalum capacitor is used, and its ESR is high, loop oscillation may result. The capacitors should be connected as close as possible to the output and ground pins. Larger values and lower ESR improves dynamic parameters. Enable Operation The enable pin CE may be used for turning the regulator on and off. The regulator is switched on when CE pin voltage is above logic high level. The enable pin has an internal pull down current source. If the enable function is not needed connect CE pin to VBIAS. Output Discharger The D version includes a transistor between VOUT and GND that is used for faster discharging of the output capacitor. This function is activated when the IC goes into disable mode. Thermal As power across the IC increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and also the ambient temperature affect the rate of temperature rise for the part. That is to say, when the device has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power dissipation applications. PCB layout Make VIN, VBIAS and GND line sufficient. If their impedance is high, noise pickup or unstable operation may result. Connect capacitors C, C2 and C3 as close as possible to the IC, and make wiring as short as possible. 9
20 ORDERING INFORMATION Device Nominal Output Voltage Marking Enable Package Shipping NCP467DSN6TG.6 V RA Auto Discharge SOT 23 5 (Pb Free) 3 / Tape & Reel NCP467DSN9TG.9 V RD Auto Discharge SOT 23 5 (Pb Free) NCP467DSNTG. V RE Auto Discharge SOT 23 5 (Pb Free) NCP467DSN2TG.2 V RF Auto Discharge SOT 23 5 (Pb Free) NCP467DSN3TG.3 V RG Auto Discharge SOT 23 5 (Pb Free) NCP467DSN5TG.5 V RJ Auto Discharge SOT 23 5 (Pb Free) NCP467DMX6TCG.6 V BA Auto Discharge XDFN6 (Pb Free) NCP467DMX9TCG.9 V BD Auto Discharge XDFN6 (Pb Free) NCP467DMX2TCG.2 V BF Auto Discharge XDFN6 (Pb Free) NCP467DMX3TCG.3 V BG Auto Discharge XDFN6 (Pb Free) 3 / Tape & Reel 3 / Tape & Reel 3 / Tape & Reel 3 / Tape & Reel 3 / Tape & Reel 5 / Tape & Reel 5 / Tape & Reel 5 / Tape & Reel 5 / Tape & Reel NCP467DMX5TCG.5 V BJ Auto Discharge XDFN6 (Pb Free) 5 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 2
21 PACKAGE DIMENSIONS SC 88A (SC 7 5/SOT 353) CASE 49A 2 ISSUE K S A G 5 4 B 2 3 D 5 PL.2 (.8) M B M N NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH A OBSOLETE. NEW STANDARD 49A DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G.26 BSC.65 BSC H J K N.8 REF.2 REF S C J H K 2
22 PACKAGE DIMENSIONS XDFN6.2x.2,.4P CASE 7AA ISSUE O 2X PIN ONE REFERENCE.5 C D ÍÍÍ ÍÍÍ 2X.5 C TOP VIEW.5 C A B E A NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN.5 AND.25mm FROM TERMINAL TIPS. 4. COPLANARITY APPLIES TO ALL OF THE TERMINALS. MILLIMETERS DIM MIN MAX A A..5 b.3.23 C.2.3 D.2 BSC E.2 BSC e.4 BSC L NOTE 4.5 C SIDE VIEW A C SEATING PLANE RECOMMENDED MOUNTING FOOTPRINT* 6X 6X e PACKAGE OUTLINE 3 C.5 6X L 6 4 BOTTOM VIEW 6X b.5 M C A B NOTE 3.4 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 22
23 PACKAGE DIMENSIONS SOT 23 5 LEAD CASE 22 ISSUE A A E L e 5 D B E 5X b. M C B S A S A2.5 S C C A RECOMMENDED SOLDERING FOOTPRINT* A L NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, CONTROLLING DIMENSIONS: MILLIMETERS. 3. DATUM C IS THE SEATING PLANE. MILLIMETERS DIM MIN MAX A A.. A2..3 b.3.5 c..25 D E E.5.8 e.95 BSC L L X.85 5X PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCP467/D
24 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: NCP467DMX6TCG NCP467DMX9TCG NCP467DMX2TCG NCP467DMX3TCG NCP467DMX5TCG NCP467DSN6TG NCP467DSN9TG NCP467DSNTG NCP467DSN2TG NCP467DSN3TG NCP467DSN5TG
NCP ma, 10 V, Low Dropout Regulator
15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage
More informationNCP ma, Low Noise Low Dropout Regulator
NCP468 15 ma, Low Noise Low Dropout Regulator The NCP468 is a CMOS linear voltage regulator with 15 ma output current capability. The device is available in a tiny.8x.8 mm XDFN, and has high output voltage
More informationNCP ma, 10 V, Low Dropout Regulator
ma, V, Low Dropout Regulator The NCP6 is a CMOS Linear voltage regulator with ma output current capability. The device is capable of operating with input voltages up to V, with high output voltage accuracy
More informationNCP ma, Wide Input Voltage Range, Low Dropout Regulator
5 ma, Wide Input Voltage Range, Low Dropout Regulator The NCP4623 is a CMOS Linear Voltage Regulator designed for wide input voltage range. The maximum operating input voltage is up to 24 V with a minimum
More informationNCP ma, Low Dropout Voltage Regulator with Reverse Current Protection
ma, Low Dropout Voltage Regulator with Reverse Current Protection The NCP66 is a CMOS ma low dropout linear regulator with a wide input voltage range of.5 V to 6 V, low supply current and high output voltage
More informationNCP694. 1A CMOS Low-Dropout Voltage Regulator
A CMOS Low-Dropout Voltage Regulator The NCP694 series of fixed output super low dropout linear regulators are designed for portable battery powered applications with high output current requirement up
More informationNCP A Low Dropout Linear Regulator
1.5 A Low Dropout Linear Regulator The NCP566 low dropout linear regulator will provide 1.5 A at a fixed output voltage. The fast loop response and low dropout voltage make this regulator ideal for applications
More informationNCP5504, NCV ma Dual Output Low Dropout Linear Regulator
25 ma Dual Output Low Dropout Linear Regulator The NCP554/NCV554 are dual output low dropout linear regulators with 2.% accuracy over the operating temperature range. They feature a fixed output voltage
More informationNCP170. Ultra Low I Q 150 ma CMOS LDO Regulator
NCP17 Ultra Low I Q 15 ma CMOS LDO Regulator The NCP17 series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current.
More informationNCP A, Low Dropout Linear Regulator with Enhanced ESD Protection
3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A
More informationNCP698. Battery Powered Instruments Hand Held Instruments Camcorders and Cameras. Features PIN CONNECTIONS & MARKING DIAGRAMS
5 ma CMOS Ultra Low Iq and I GND LDO Regulator with Enable This series of fixed output lowdropout linear regulators are designed for handheld communication equipment and portable battery powered applications
More informationNCP59302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series
NCP5932, NCV5932 3. A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series The NCP5932 is a high precision, very low dropout (VLDO), low ground current positive voltage regulator that is capable
More informationNCV8170. Ultra Low I Q 150 ma CMOS LDO Regulator
NCV817 Ultra Low I Q 15 ma CMOS LDO Regulator The NCV817 series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current.
More informationNCP57302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator
NCP5732, NC5732 3. A, ery Low-Dropout (LDO) Fast Transient Response Regulator The NCP5732 is a high precision, very low dropout (LDO), low minimum input voltage and low ground current positive voltage
More informationNCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage
Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage The is high performance linear regulator, offering a very wide operating input voltage range of up
More informationNCP304A. Voltage Detector Series
Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where
More informationNCP5426. LDO Regulator/Vibration Motor Driver
LDO Regulator/Vibration Motor Driver The NCP5426 series of fixed output, 15 ma low dropout linear regulators are designed to be an economical solution for a variety of applications. Each device contains
More informationNTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
More informationNTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
More informationNCP508. Very Low Noise, Fast Turn On, 50 ma Low Dropout Voltage Regulator
NCP58 Very Low Noise, Fast Turn On, 5 ma Low Dropout Voltage Regulator The NCP58 is a 5 ma low noise voltage regulator, designed to exhibit fast turn on time and high ripple rejection. Each device contains
More informationNVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
More informationMUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
More informationNTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
More informationNTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
More informationNSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
More informationNTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
More informationNTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
More informationNCP331. Soft-Start Controlled Load Switch with Auto Discharge
Soft-Start Controlled Load Switch with Auto Discharge The NCP331 is a low Ron N channel MOSFET controlled by a soft start sequence of 2 ms for mobile applications. The very low R DS(on) allows system supplying
More informationMMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
More informationMJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
More informationNTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
More information7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.
2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power
More informationMMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
More informationNSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
More informationNTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
More informationNCP334, NCP335. 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path
2A Ultra-Small Controlled Load Switch with Auto-Discharge Path The NCP334 and NCP335 are low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy.
More informationBAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
More informationNTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
More informationNTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89
NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD
More informationNTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
More informationNCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output
Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output
More informationNTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
More informationNCP170. Ultra Low I Q 150 ma CMOS LDO Regulator
NCP17 Ultra Low I Q 15 ma CMOS LDO Regulator The NCP17 series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current.
More informationPIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
More informationNTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
More informationNTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
More informationNDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
More informationMMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
More informationNCP553, NCV ma CMOS Low Iq NOCAP Voltage Regulator
NCP55, NCV55 8 ma CMOS Low Iq NOCAP Voltage Regulator This series of fixed output NOCAP linear regulators are designed for handheld communication equipment and portable battery powered applications which
More informationNTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
More informationMUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
More informationNTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
More informationCMPWR ma SmartOR Regulator with V AUX Switch
50 ma SmartOR Regulator with Switch Product Description The ON Semiconductor s SmartOR is a low dropout regulator that delivers up to 50 ma of load current at a fixed 3.3 V output. An internal threshold
More informationMMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
More informationNVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
More informationMMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
More informationCS8183. Dual Micropower 200 ma Low Dropout Tracking Regulator/Line Driver
Dual Micropower ma Low Dropout Tracking Regulator/Line Driver The is a dual low dropout tracking regulator designed to provide adjustable buffered output voltages that closely track (±1 mv) the reference
More informationNTLUF4189NZ Power MOSFET and Schottky Diode
NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
More informationMJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
More informationNTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
More informationUMC2NT1, UMC3NT1, UMC5NT1
UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor
More informationPZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
More informationMUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
More informationBC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
More informationNCP mA, Very Low Dropout Bias Rail CMOS Voltage Regulator
NCP13 3mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP13 is a 3 ma VLDO equipped with NMOS pass transistor and a separate bias supply voltage (V BIAS ). The device provides very stable, accurate
More informationNB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier
4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference
More informationNCP400. Memory Cards Cellular Phones Digital Still Cameras and Camcorders Battery Powered Equipment. MARKING DIAGRAM.
150 ma CMOS Low Iq Low Dropout Voltage Regulator with Voltage Detector Output The NCP400 is an integration of a low dropout regulator and a voltage detector in a very small chip scale package. The voltage
More informationNTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
More informationNUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection
Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching
More informationMJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
More informationNTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
More informationNTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package
NTTDF FETKY Power MOSFET and Schottky Diode V,. A P Channel with V,. A Schottky Diode, Micro Package The FETKY product family incorporates low R DS(on), true logic level MOSFETs packaged with industry
More informationNCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3
4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,
More informationNDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
More informationNTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package
NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution
More informationNTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
More informationNCP170. Ultra Low I Q 150 ma CMOS LDO Regulator
Ultra Low I Q 15 ma CMOS LDO Regulator The series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current. The ultra-low
More informationNTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
More informationNSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
More informationMBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
More informationNVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
More informationNGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
More informationNTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
More informationNTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
More informationNSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSJ, NSVJ V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat) )
More informationEMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
More informationP2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
More informationNSS12100M3T5G. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 350 m
NSSMTG, A, Low CE(sat) PNP Transistor ON Semiconductor's e PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current
More informationMMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
More informationMBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
More informationNSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
More informationNTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
More informationMUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
More informationMMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
More informationMURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
More informationNTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
More informationNCP A Linear Voltage Regulator with Soft Start
3. A Linear Voltage Regulator with SoftStart The NCP63 is a low dropout positive voltage regulator that is capable of providing a guaranteed output current of 3. A with a maximum dropout voltage of. V
More informationNGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
More informationDistributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
More informationMJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
More information