NCP331. Soft-Start Controlled Load Switch with Auto Discharge
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1 Soft-Start Controlled Load Switch with Auto Discharge The NCP331 is a low Ron N channel MOSFET controlled by a soft start sequence of 2 ms for mobile applications. The very low R DS(on) allows system supplying or battery charging up to DC 2A.The device is enable due to external, active high, enable pin. Due to a current consumption optimization, leakage current is drastically decreased from the battery connected to the device, allowing long battery life. Features 1.8 V 5.5 V Operating Range 33 m N MOSFET DC Current Up to 2 A Peak Current Up to 5 A Built in Soft Start 2 ms Reverse Voltage Protection Output Discharge EN Logic Pin: Active High ESD Ratings: Machine Model = B Human Body Model = 2 TSOP23 6 package This is a Pb Free Device Typical Applications Mobile Phones Tablets Digital Cameras GPS Computers 1 TSOP 6 SN SUFFIX CASE 318G 331 = Specific Device Code A = Assembly Location Y = Year W = Work Week = Pb Free Package (Note: Microdot may be in either location) P DIAGRAM EN (Top View) MARKG DIAGRAM 331AYW 1 ORDERG FORMATION See detailed ordering and shipping information on page 7 of this data sheet. GND LS DCDC Converter or LDO 5 6 NCP331 /EN GND Platform IC n ENx EN 0 Figure 1. Typical Application Circuit Semiconductor Components Industries, LLC, 2013 November, 2013 Rev. 1 1 Publication Order Number: NCP331/D
2 P FUNCTION DESCRIPTION Pin Name Pin Number Type Description 5,6 POWER Power switch input voltage; connect a 0.1 F or greater ceramic capacitor from to GND as close as possible to the IC. GND 4 POWER Ground connection. EN 3 PUT Enable input, logic high turns on power switch. 1,2 PUT Power switch output; connect a 0.1 F ceramic capacitor from to GND as close as possible to the IC is recommended. BLOCK DIAGRAM Gate driver and soft start control Control logic Charge Pump EN EN block GND Figure 2. Block Diagram 2
3 MAXIMUM RATGS Rating Symbol Value Unit,, EN, Pins: V EN, V, 0.3 to +7.0 V V From to Pins: Input/Output V, V 7.0 to +7.0 V Maximum Junction Temperature Range T J 40 to +125 C Storage Temperature Range T STG 40 to +150 C ESD Withstand Voltage Human Body model (HBM), model = 2, Machine Model (MM) model = B, (Note 1) Moisture Sensitivity (Note 2) MSL Level 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. According to JEDEC standard JESD22 A Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J STD 020. Vesd V OPERATG CONDITIONS Symbol Parameter Conditions Min Typ Max Unit V Operational Power Supply V V EN Enable Voltage T A Ambient Temperature Range C T J Junction Temperature Range C C Decoupling Input Capacitor 0.1 F C Decoupling Output Capacitor 0.1 F R JA Thermal Resistance Junction to Air (Notes 3 and 4) 305 C/W I Maximum DC Current 2 A P D Power Dissipation Rating (Note 7) T A 25 C 0.37 W T A = 85 C 0.13 W Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 3. The R JA is dependent of the PCB heat dissipation. 4. The maximum power dissipation (P D ) is given by the following formula: 3
4 ELECTRICAL CHARACTERISTICS Min & Max Limits apply for T A between 40 C to +85 C and T J up to C for V between 1.8 V to 5.5 V (Unless otherwise noted). Typical values are referenced to T A = + 25 C and V = 5 V. Symbol Parameter Conditions Min Typ Max Unit POWER SWITCH R DS(on) Static drain source on state resistance V = 3 V, V = 5 V, TSOP package T J = 25 C C < T J < 125 C 60 m T EN Gate turn on V = 3.3 V V = 3.0 V From EN Vih to V rising. (Note 5), C LOAD = 0.1 F, R LOAD = 10 From EN Vih to 10% V rising. C LOAD = 1 F, R LOAD = s s T R Output rise time V = 3.3 V V = 3.0 V C LOAD = 0.1 F, R LOAD = 10 (Note 5), from En to 95% V C LOAD = 1 F, R LOAD = 25 (Note 6), from 10% to 90% V Tdis Disable time V = 3.0 V From EN high to low to V falling 0.3 ms T F Output fall time V = 3 V C LOAD = 1 F, R LOAD = 25 (Note 6) T OFF Output off time V = 3 V C LOAD = 1 F, R LOAD = 25 (Notes 6 & 7), from EN to 10% V ENABLE PUT EN V IH High level input voltage 1.15 V V IL Low level input voltage 0.85 V R pd En pull down resistor M R dis Output discharge resistor REVERSE LEAKAGE PROTECTION I REV Reverse current protection V = 0 V, V = 4.2 V (part disable), T A = 25 C A QUIESCENT CURRENT Istb Standby current En low, Vin = 3 V A Iq Current consumption No load, En high, Vin = 3 V A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Guaranteed by correlation with 3.0 V production test. 6. Parameters are guaranteed for C LOAD and R LOAD connected to the pin with respect to the ground. 7. Guaranteed by T fall and R discharge tests. 4
5 TIMGS V in EN V out T EN T R T DIS T F T ON T OFF Figure 3. Timings 5
6 TYPICAL CHARACTERISTICS R DS(on) (m ) V = 5.0 V V = 1.8 V V = 3.0 V V = 5.5 V R DS(on) (m ) TEMPERATURE ( C) Figure 4. R DS(on) versus Temperature V (V) Figure 5. R DS(on) versus Input Voltage, Ambient Temperature I STB ( A) T A = 40 C T A = 25 C T A = 85 C Iq ( A) T A = 40 C T A = 25 C T A = 85 C V (V) Figure 6. Standby Current versus Input Voltage V (V) Figure 7. Quiescent Current versus Input Voltage 6
7 FUNCTIONAL DESCRIPTION Overview The NCP331 is a high side N channel MOSFET power distribution switch designed to connect external voltage directly to the system. Enable Input Enable pin is an active high. The part is in disable mode when EN is tied to low. Power MOSFET is opened. Pull down resistor is placed to maintained the part off if En pin is not externally driven. The parts becomes in enable mode if EN is tied high and Power MOSFET is turned of after ten and t rise times. Auto Discharge NMOS FET is placed between the output pin and GND, in order to discharge the application capacitor connected on pin. The auto discharge is activated when EN pin is set to low level (disable state). The discharge path (Pull down NMOS) stays activated as long as EN pin is set at low level. Blocking Control The blocking control circuitry switches the bulk of the power NMOS. When the part is off (No V in or EN tied to GND externally), the body diode limits the leakage current I REV from to. In this mode, anode of the body diode is connected to pin and cathode is connected to pin. In operating condition, anode of the body diode is connected to pin and cathode is connected to pin preventing the discharge of the power supply. APPLICATION FORMATION Power Dissipation The device s junction temperature depends on different contributor factor such as board layout, ambient temperature, device environment, etc... Yet, the main contributor in term of junction temperature is the power dissipation of the power MOSFET. Assuming this, the power dissipation and the junction temperature in normal mode can be calculated with the following equations: P D R DS(on) I P D R DS(on) (I ) 2 = Power dissipation (W) = Power MOSFET on resistance ( ) = Output current (A) T J R JA T A T J P D R JA T A = Junction temperature ( C) = Package thermal resistance ( C/W) = Ambient temperature ( C) PCB Recommendations The NCP331 integrates an up to 2A rated NMOS FET, and the PCB design rules must be respected to properly evacuate the heat out of the silicon. By increasing PCB area, the R JA of the package can be decreased, allowing higher power dissipation. ORDERG FORMATION Device Marking Package Shipping NCP331SNT1G 331 TSOP 6 (Pb Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 7
8 PACKAGE DIMENSIONS TSOP 6 CASE 318G 02 ISSUE V E1 NOTE 5 e 0.05 A1 D ÉÉÉ b E A c L H M DETAIL Z DETAIL Z L2 GAUGE PLANE C SEATG PLANE NOTES: 1. DIMENSIONG AND TOLERANCG PER ASME Y14.5M, CONTROLLG DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS CLUDES LEAD FISH. MIMUM LEAD THICKNESS IS THE MIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT CLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMED AT DATUM H. 5. P ONE DICATOR MUST BE LOCATED THE DICATED ZONE. MILLIMETERS DIM M NOM MAX A A b c D E E e L L BSC M 0 10 RECOMMENDED SOLDERG FOOTPRT* 6X X PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERG FORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCP331/D
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NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3
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P2I2305NZ. 3.3V 1:5 Clock Buffer
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NCP ma, 10 V, Low Dropout Regulator
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NCP A Low Dropout Linear Regulator
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NCP3334. High Accuracy, Ultra Low Iq, 500 ma Adjustable Low Dropout Regulator
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MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
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MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
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NL27WZ07. Dual Buffer with Open Drain Outputs
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MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS
MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
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NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
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NCS2302. Headset Detection Interface with Send/End Detect
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NCP800. Lithium Battery Protection Circuit for One Cell Battery Packs
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NLHV18T Channel Level Shifter
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MBRA320T3G Surface Mount Schottky Power Rectifier
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NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection
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NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
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MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
NCP ma, Low Dropout Voltage Regulator with Reverse Current Protection
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NCP ma, Low Noise Low Dropout Regulator
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MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package
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MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
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NCP ma, Wide Input Voltage Range, Low Dropout Regulator
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MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
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NTTD4401F. FETKY Power MOSFET and Schottky Diode. 20 V, 3.3 A P Channel with 20 V, 1.0 A Schottky Diode, Micro8 Package
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Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features
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MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
MMSZxxxET1 Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
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NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection
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MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) High oltage Power Transistors for Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
NTGS3443, NVGS3443. Power MOSFET 4.4 Amps, 20 Volts. P Channel TSOP AMPERES 20 VOLTS R DS(on) = 65 m
NTGS, NVGS Power MOSFET., Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package These Devices are PbFree and are RoHS Compliant NVGS
NTF2955. Power MOSFET. 60 V, 2.6 A, Single P Channel SOT 223
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MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
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MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF