NCP ma, Low Dropout Voltage Regulator with Reverse Current Protection

Size: px
Start display at page:

Download "NCP ma, Low Dropout Voltage Regulator with Reverse Current Protection"

Transcription

1 ma, Low Dropout Voltage Regulator with Reverse Current Protection The NCP66 is a CMOS ma low dropout linear regulator with a wide input voltage range of.5 V to 6 V, low supply current and high output voltage accuracy. Through an ECO mode selector pin the device can be operated in low power mode to reduce quiescent current or fast mode for better transient response and lower dropout. The NCP66 is suitable for applications where the VOUT pin voltage may be higher than the VIN pin voltage as it is protected against reverse current. The device has a maximum input voltage tolerance of 8 V, comes with or without an auto discharge feature on the output, and is available in a choice of XDFN, SOT89 and SOT packages. Features Operating Input Voltage Range:.5 V to 6. V Output Voltage Range:. to 5. V (available in. V steps) Low Quiescent current (6 ua typ.) in Low Power Mode Dropout Voltage: 55 mv typ. (I OUT = ma, V OUT = 5 V, Fast Mode) 7 mv typ. (I OUT = ma, V OUT = 5 V, Low Power Mode) Output Voltage Accuracy: ±.5% (Fast Mode) ±.5% (Low Power Mode) High PSRR: 6 db at khz Current Fold Back Protection Thermal Shutdown Protection Stable with a C IN =. F and C OUT =.7 F Ceramic Capacitors Available in.6x.6 XDFN6, SOT89 5 and SOT 5 Package These are Pb Free Devices Typical Applications Digital Home Appliances Audio Visual Equipment Battery backup circuits VIN C VIN CE AE NCP66x GND VOUT C 7 VOUT XDFN6 CASE 7AC 6 SOT 89 5 CASE 58AB SOT 5 CASE MARKING DIAGRAMS XXX, XXXX = Specific Device Code M, MM = Date Code A = Assembly Location Y = Year W = Work Week = Pb Free Package (*Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. XXX XMM XXX XMM XXXMM Figure. Typical Application Schematic Semiconductor Components Industries, LLC, August, Rev. Publication Order Number: NCP66/D

2 NCP66Hxxxxxxxx ECO Thermal Shutdown NCP66Dxxxxxxxx ECO Thermal Shutdown VIN VOUT VIN VOUT Vref Vref Short Protection Short Protection CE Peak Current Protection Reverse Detector GND CE Peak Current Protection Reverse Detector GND Figure. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. XDFN (Note ) Pin No. SOT89 Pin No. SOT Pin Name Description ECO Mode selector pin. H fast mode, L low power mode 5 5 VIN Input voltage pin VOUT Output voltage pin 5 GND Ground pin 6 CE Chip enable pin ( H enabled) NC No connection. Tab is connected to GND. Tab should be connected to GND, but leaving it unconnected is also acceptable

3 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note ) V IN. to 8. V Output Voltage VOUT. to 8. V Chip Enable Input VCE. to 8. V Mode Selector Input V ECO. to V IN V Output Current I OUT ma Power Dissipation XDFN P D 6 mw Power Dissipation SOT89 9 Power Dissipation SOT Maximum Junction Temperature T J(MAX) 5 C Operation Temperature Rnage T A to 85 C Storage Temperature T STG 55 to 5 C ESD Capability, Human Body Model (Note ) ESD HBM V ESD Capability, Machine Model (Note ) ESD MM V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC Q (EIA/JESD A) ESD Machine Model tested per AEC Q (EIA/JESD A5) Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Characteristics, XDFN6 Thermal Resistance, Junction to Air Thermal Characteristics, SOT 5 Thermal Resistance, Junction to Air Thermal Characteristics, SOT89 5 Thermal Resistance, Junction to Air R JA 56 C/W R JA 8 C/W R JA C/W ELECTRICAL CHARACTERISTICS C T A 85 C; V IN = V CE = V OUT(NOM) +. V; I OUT = ma, C IN =. F, C OUT =.7 F, unless otherwise noted. Typical values are at T A = +5 C Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage. V V OUT <. V VIN.5. V. V V OUT 6. Output Voltage Fast Mode, V ECO = V IN TA = +5 C VOUT x.985 x.5 V Low Power Mode, V ECO = GND T A = to 85 C x.97 x. TA = +5 C x.975 x.5 T A = to 85 C x.96 x. Output Voltage Deviation Fast mode to Low Power mode and back V OUT.5.5 % Output Voltage Temp. Coefficient T A = to 85 C ±8 ppm/ C Line Regulation V IN = VOUT +.5 V to 6 V (If V OUT <. V,.5 V to V) Line Reg.. %/V

4 ELECTRICAL CHARACTERISTICS C T A 85 C; V IN = V CE = V OUT(NOM) +. V; I OUT = ma, C IN =. F, C OUT =.7 F, unless otherwise noted. Typical values are at T A = +5 C Parameter Test Conditions Symbol Load Regulation IOUT = ma to ma Fast Mode, V ECO = V IN Load Reg 5 mv Dropout Voltage Low Power, V ECO = GND Min Typ Max 6 I OUT = ma, Fast. V V OUT <.5 V VDO..8 V Mode, V ECO = V IN.5 V V OUT <. V..5 I OUT = ma, Low Power Mode, V ECO = GND. V V OUT < 5. V V V OUT <. V V V OUT..6. V V OUT <.5 V.5..5 V V OUT <. V..5. V V OUT < 5. V V V OUT <. V.7.. V V OUT..6 Output Current IOUT ma Short Current Limit V OUT = V I SC 5 ma Quiescent Current V ECO = V IN, IOUT = ma IQ 5 A Standby Current CE and ECO Pin Threshold Voltage Power Supply Rejection Ratio VIN = V ECO = V OUT +. V, V IN =. V PP, f = khz Output Noise Voltage V ECO = GND, IOUT = ma 6 5 V IN = 6. V (If V OUT <. V, V IN =. V), T A = 5 C Unit ISTB. A CE Input Voltage H VCEH.6 V IN V CE Input Voltage L VCEL.6 V IN = 6. V, V OUT =. V, I OUT = ma, f = Hz to khz. V V OUT < 5. V PSRR 7 db 5. V V OUT 6 VN 9 V rms Thermal Shutdown Temperature T SD 5 C Thermal Shutdown Release Temperature T SDR C Reverse Current V OUT >.6 V, V V IN 6 V I REV. A Low Output Nch Tr. On Resistance D Version only, V IN = 5 V, V CE = V, V OUT =. V R LOW 5

5 V V 5.5 V V IN =.5 V V 5.5 V V IN =.5 V. 6. V.8 V..8 V Figure. Output Voltage vs. Output Current. V, Figure. Output Voltage vs. Output Current. V, V 6. V 5.5 V V IN =.8 V 5. V V 6.5 V 6. V V IN =.8 V 5. V Figure 5. Output Voltage vs. Output Current. V, Figure 6. Output Voltage vs. Output Current. V, V 7. V 6. V V IN = 5.7 V 5.5 V... V IN = 5.7 V 8. V 7. V 5.5 V 6. V Figure 7. Output Voltage vs. Output Current 5. V, Figure 8. Output Voltage vs. Output Current 5. V, 5

6 .5.5. T J = 85 C. V DO (V) C C V DO (V) C T J = 85 C.. C Figure 9. Dropout Voltage vs. Output Current. V Version, Figure. Dropout Voltage vs. Output Current. V Version, V DO (V) C T J = 85 C C V DO (V) C T J = 85 C.. C Figure. Dropout Voltage vs. Output Current. V Version, Figure. Dropout Voltage vs. Output Current. V Version, V DO (V).6. 5 C T J = 85 C V DO (V).6. 5 C T J = 85 C. C. C Figure. Dropout Voltage vs. Output Current 5. V Version, Figure. Dropout Voltage vs. Output Current 5. V Version, 6

7 .5.. V IN = 6. V I OUT = ma.5.. V IN = 6. V I OUT = ma T J, JUNCTION TEMPERATURE ( C) Figure 5. Output Voltage vs. Temperature,. V Version, T J, JUNCTION TEMPERATURE ( C) Figure 6. Output Voltage vs. Temperature,. V Version,.5.. V IN = 6. V I OUT = ma.5.. V IN = 6. V I OUT = ma T J, JUNCTION TEMPERATURE ( C) Figure 7. Output Voltage vs. Temperature,. V Version, T J, JUNCTION TEMPERATURE ( C) Figure 8. Output Voltage vs. Temperature,. V Version, V IN = 8. V I OUT = ma V IN = 8. V I OUT = ma T J, JUNCTION TEMPERATURE ( C) Figure 9. Output Voltage vs. Temperature, 5. V Version, T J, JUNCTION TEMPERATURE ( C) Figure. Output Voltage vs. Temperature, 5. V Version, 7

8 I GND ( A) I GND ( A) I GND ( A) V IN, INPUT VOLTAGE (V) Figure. Supply Current vs. Input Voltage,. V Version, V IN, INPUT VOLTAGE (V) Figure. Supply Current vs. Input Voltage,. V Version, V IN, INPUT VOLTAGE (V) Figure 5. Supply Current vs. Input Voltage, 5. V Version, I GND ( A) I GND ( A) I GND ( A) V IN, INPUT VOLTAGE (V) Figure. Supply Current vs. Input Voltage,. V Version, V IN, INPUT VOLTAGE (V) Figure. Supply Current vs. Input Voltage,. V Version, V IN, INPUT VOLTAGE (V) Figure 6. Supply Current vs. Input Voltage, 5. V Version, 8

9 9 8 7 V IN = 6. V V IN = 6. V I GND ( A) 6 5 I GND ( A) T J, JUNCTION TEMPERATURE ( C) Figure 7. Supply Current vs. Temperature,. V Version, T J, JUNCTION TEMPERATURE ( C) Figure 8. Supply Current vs. Temperature,. V Version, V IN = 6. V V IN = 6. V I GND ( A) 6 5 I GND ( A) T J, JUNCTION TEMPERATURE ( C) Figure 9. Supply Current vs. Temperature,. V Version, T J, JUNCTION TEMPERATURE ( C) Figure. Supply Current vs. Temperature,. V Version, V IN = 8. V V IN = 8. V I GND ( A) 6 5 I GND ( A) T J, JUNCTION TEMPERATURE ( C) Figure. Supply Current vs. Temperature, 5. V Version, T J, JUNCTION TEMPERATURE ( C) Figure. Supply Current vs. Temperature, 5. V Version, 9

10 I OUT = 5 ma ma ma ma I OUT = 5 ma ma ma ma V IN, INPUT VOLTAGE (V) V IN, INPUT VOLTAGE (V) Figure. Output Voltage vs. Input Voltage,. V Version, Figure. Output Voltage vs. Input Voltage,. V Version, I OUT = 5 ma..5 I OUT = 5 ma..5 ma ma ma..5 ma ma ma V IN, INPUT VOLTAGE (V) V IN, INPUT VOLTAGE (V) Figure 5. Output Voltage vs. Input Voltage,. V Version, Figure 6. Output Voltage vs. Input Voltage,. V Version, I OUT = 5 ma ma ma ma I OUT = 5 ma ma. ma ma V IN, INPUT VOLTAGE (V) V IN, INPUT VOLTAGE (V) Figure 7. Output Voltage vs. Input Voltage, 5. V Version, Figure 8. Output Voltage vs. Input Voltage, 5. V Version,

11 PSRR (db) I OUT = ma ma PSRR (db) ma I OUT = ma ma ma 5 ma 5 ma. FREQUENCY (khz) Figure 9. PSRR,. V Version, V IN = 6. V,. FREQUENCY (khz) Figure. PSRR,. V Version, V IN = 6. V, PSRR (db) I OUT = ma ma PSRR (db) ma I OUT = ma ma ma 5 ma 5 ma. FREQUENCY (khz) Figure. PSRR,. V Version, V IN = 6. V, 9. FREQUENCY (khz) Figure. PSRR,. V Version, V IN = 6. V, 9 PSRR (db) I OUT = ma ma PSRR (db) ma ma I OUT = ma ma 5 ma. FREQUENCY (khz) Figure. PSRR, 5. V Version, V IN = 8. V, 5 ma. FREQUENCY (khz) Figure. PSRR, 5. V Version, V IN = 8. V,

12 V N ( V rms / Hz)... V N ( V rms / Hz) FREQUENCY (khz) Figure 5. Output Voltage Noise,. V Version, V IN = 6. V, I OUT = ma,.. FREQUENCY (khz) Figure 6. Output Voltage Noise,. V Version, V IN = 6. V, I OUT = ma, V N ( V rms / Hz)... V N ( V rms / Hz) FREQUENCY (khz) Figure 7. Output Voltage Noise,. V version, V IN = 6. V, I OUT = ma,.. FREQUENCY (khz) Figure 8. Output Voltage Noise,. V Version, V IN = 6. V, I OUT = ma, V N ( V rms / Hz) V N ( V rms / Hz) FREQUENCY (khz) Figure 9. Output Voltage Noise, 5. V Version, V IN = 8. V, I OUT = ma, FREQUENCY (khz) Figure 5. Output Voltage Noise, 5. V Version, V IN = 8. V, I OUT = ma,

13 t ( s) Figure 5. Line Transients,. V Version, t R = t F = 5 s, I OUT = ma, V IN (V) t ( s) Figure 5. Line Transients,. V Version, t R = t F = 5 s, I OUT = ma, V IN (V) Figure 5. Line Transients,. V Version, t R = t F = 5 s, I OUT = ma, V IN (V)

14 t ( s) Figure 5. Line Transients,. V Version, t R = t F = 5 s, I OUT = ma, V IN (V) Figure 55. Line Transients, 5. V Version, t R = t F = 5 s, I OUT = ma, V IN (V) t ( s) Figure 56. Line Transients, 5. V Version, t R = t F = 5 s, I OUT = ma, V IN (V)

15 Figure 57. Load Transients,. V Version, I OUT = ma, t R = t F =.5 s, V IN = 6. V, t ( s) Figure 58. Load Transients,. V Version, I OUT = ma, t R = t F =.5 s, V IN = 6. V, Figure 59. Load transients,. V version, I OUT = ma, t R = t F =.5 s, V IN = 6. V, 5 5 5

16 t ( s) Figure 6. Load Transients,. V Version, I OUT = ma, t R = t F =.5 s, V IN = 6. V, Figure 6. Load Transients, 5. V Version, I OUT = ma, t R = t F =.5 s, V IN = 8. V, t ( s) Figure 6. Load Transients, 5. V Version, I OUT = ma, t R = t F =.5 s, V IN = 8. V,

17 Figure 6. Load Transients,. V Version, I OUT = 5 ma, t R = t F =.5 s, V IN = 6. V, t ( s) Figure 6. Load Transients,. V Version, I OUT = 5 ma, t R = t F =.5 s, V IN = 6. V, Figure 65. Load Transients,. V Version, I OUT = 5 ma, t R = t F =.5 s, V IN = 6. V,

18 t ( s) Figure 66. Load Transients,. V Version, I OUT = 5 ma, t R = t F =.5 s, V IN = 6. V, Figure 67. Load Transients, 5. V Version, I OUT = 5 ma, t R = t F =.5 s, V IN = 8. V, t ( s) Figure 68. Load Transients, 5. V Version, I OUT = 5 ma, t R = t F =.5 s, V IN = 8. V,

19 Figure 69. Load Transients,. V Version, I OUT = ma, t R = t F =.5 s, V IN = 6. V, Figure 7. Load Transients,. V Version, I OUT = ma, t R = t F =.5 s, V IN = 6. V, Figure 7. Load Transients,. V Version, I OUT = ma, t R = t F =.5 s, V IN = 6. V, 5 5 9

20 Figure 7. Load Transients,. V Version, I OUT = ma, t R = t F =.5 s, V IN = 6. V, Figure 7. Load Transients, 5. V Version, I OUT = ma, t R = t F =.5 s, V IN = 8. V, Figure 7. Load Transients, 5. V Version, I OUT = ma, t R = t F =.5 s, V IN = 8. V,

21 Chip Enable 9 6 I OUT = ma I OUT = 5 ma I OUT = ma Figure 75. Start up,. V Version, V IN = 6. V, V CE (V) Chip Enable 9 6 I OUT = ma I OUT = ma I OUT = 5 ma t ( s) Figure 76. Start up,. V Version, V IN = 6. V, V CE (V) Chip Enable I OUT = ma I OUT = ma I OUT = 5 ma Figure 77. Start up,. V Version, V IN = 6. V, V CE (V)

22 Chip Enable I OUT = ma I OUT = ma I OUT = 5 ma t ( s) Figure 78. Start up,. V Version, V IN = 6. V, I OUT = ma I OUT = ma I OUT = 5 ma Chip Enable Figure 79. Start-up, 5. V Version, V IN = 8. V, I OUT = ma Chip Enable I OUT = ma I OUT = 5 ma t ( s) Figure 8. Start-up, 5. V Version, V IN = 8. V, 8 8 V CE (V) V CE (V) V CE (V)

23 Chip Enable 9 6 I OUT = ma IOUT = ma I OUT = 5 ma Figure 8. Shutdown,. V Version D, V IN = 6. V Chip Enable I OUT = ma I OUT = ma I OUT = 5 ma Figure 8. Shutdown,. V Version D, V IN = 6. V I OUT = ma Chip Enable I OUT = ma I OUT = 5 ma Figure 8. Shutdown, 5. V Version D, V IN = 8. V V CE (V) V CE (V) V CE (V)

24 APPLICATION INFORMATION A typical application circuit for NCP66 series is shown in Figure 8. VIN C VIN CE AE NCP66x GND VOUT Figure 8. Typical Application Schematic C 7 VOUT Input Decoupling Capacitor (C) A. F (or larger) ceramic input decoupling capacitor should be connected as close as possible to the input and ground pin of the NCP66. Higher capacitor values and lower ESR improves line transient response. Output Decoupling Capacitor (C) A.7 F (or larger) ceramic output decoupling capacitor is sufficient to achieve stable operation of the IC. It is necessary to use a capacitor with good frequency characteristics and low ESR. The capacitor should be connected as close as possible to the output and ground pins. Larger capacitor values and lower ESR improves dynamic parameters. Enable Operation The enable pin CE may be used to turn the regulator on and off. The IC is switched on when a high level voltage is applied to the CE pin. The enable pin has an internal pull down resistor. If the enable function is not needed, connect the CE pin to VIN. Output Discharger The D version of the NCP66 includes a transistor between VOUT and GND that is used for faster discharging of the output capacitor. This function is activated when the IC goes into disable mode. Current Limit This regulator includes fold-back type current limit circuit. This type of protection doesn t limit current up to current capability in normal operation, but when over current occurs, output voltage and current decrease until over current condition ends. Typical characteristics of this protection type can be observed in the Output Voltage versus Output Current graphs shown in the typical characteristics chapter of this datasheet. ECO Function The IC can be switched between two modes by ECO pin. One mode is low power mode, where IC s self current consumption is low, but IC has slower dynamic behavior or in to fast mode, where current consumption is higher, but the IC has better dynamic response and lower dropout voltage. Do not leave the ECO pin unconnected or between V CEH and V CEL voltage levels as this may cause indefinite and unexpected currents flows internally. Thermal Considerations As power across the IC increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature effect the rate of temperature rise for the part. That is to say, when the device has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power dissipation applications. The IC includes internal thermal shutdown circuit that stops the regulator operating if the junction temperature is higher than 5 C. After shutdown, when the junction temperature decreases below C, the voltage regulator would restarts. As long as the high power dissipation condition exists, the regulator will start and stop repeatedly to protect itself against overheating. Care should be taken in the PCB layout to try to avoid this temperature cycling condition. PCB Layout Make the VIN and GND lines as large as possible. If their impedance is high, noise pickup or unstable operation may result. Connect capacitors C and C as close as possible to the IC, and make wiring as short as possible. The tab under the XDFN package is internally connected to GND: it is best practice to connect it to GND on the PCB, but leaving it unconnected is also acceptable.

25 ORDERING INFORMATION Device Nominal Output Voltage Description Marking Package Shipping NCP66DSNTG. V Auto discharge 6 SOT / Tape & Reel NCP66DSNTG. V Auto discharge 6 SOT NCP66DSN5TG.5 V Auto discharge 65 SOT NCP66DSN5TG 5. V Auto discharge 65 SOT NCP66HSNTG. V Standard SOT NCP66HSNTG. V Standard SOT NCP66HSN5TG.5 V Standard 5 SOT NCP66HSN5TG 5. V Standard 5 SOT NCP66DMXTCG. V Auto discharge CH XDFN NCP66DMXTCG. V Auto discharge CH XDFN NCP66DMX5TCG.5 V Auto discharge CH6 XDFN NCP66DMX5TCG 5. V Auto discharge CH XDFN NCP66HMXTCG. V Standard CF XDFN NCP66HMXTCG. V Standard CF XDFN NCP66HMX5TCG.5 V Standard CF6 XDFN NCP66HMX5TCG 5. V Standard CF XDFN / Tape & Reel / Tape & Reel / Tape & Reel / Tape & Reel / Tape & Reel / Tape & Reel / Tape & Reel 5 / Tape & Reel 5 / Tape & Reel 5 / Tape & Reel 5 / Tape & Reel 5 / Tape & Reel 5 / Tape & Reel 5 / Tape & Reel 5 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *To order other package and voltage variants, please contact your ON Semiconductor sales representative. 5

26 PACKAGE DIMENSIONS XDFN6.6x.6,.5P CASE 7AC ISSUE O X.5 C PIN ONE REFERENCE X NOTE.5 C.5 C D ÉÉÉ ÉÉÉ.5 C TOP VIEW SIDE VIEW D A B E A A C SEATING PLANE.5 M C A B L NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A. A..5 b.5.5 D.6 BSC D.5.5 E.6 BSC E E.5 REF e.5 BSC L.5.5 L.5 BSC RECOMMENDED MOUNTING FOOTPRINT*.7 X L X E E.5 M C A B 6 6X b e.5 M C A B BOTTOM VIEW 6X.8 PACKAGE OUTLINE.5 PITCH.77 6X.6.79 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6

27 PACKAGE DIMENSIONS SOT 89, 5 LEAD CASE 58AB ISSUE O E D H NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. LEAD THICKNESS INCLUDES LEAD FINISH.. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. DIMENSIONS L, L, L, L, L5, AND H ARE MEAS- URED AT DATUM PLANE C. C A TOP VIEW SIDE VIEW c. C MILLIMETERS DIM MIN MAX A..6 b..5 b.7.57 c..5 D..6 D..8 E..6 e..6 H.5.5 L..5 L.8. L.95.5 L.65.5 L5..6 e b e b L RECOMMENDED MOUNTING FOOTPRINT* L X L L 5 D BOTTOM VIEW L X.5 X.6 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7

28 PACKAGE DIMENSIONS SOT 5 LEAD CASE ISSUE A A E L e 5 D B E 5X b. M C B S A S A.5 S C C A RECOMMENDED SOLDERING FOOTPRINT* A L NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.5M, 99.. CONTROLLING DIMENSIONS: MILLIMETERS.. DATUM C IS THE SEATING PLANE. MILLIMETERS DIM MIN MAX A A.. A.. b..5 c..5 D.7. E.5. E.5.8 e.95 BSC L L X.85 5X PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: or 8 86 Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCP66/D

NCP ma, Wide Input Voltage Range, Low Dropout Regulator

NCP ma, Wide Input Voltage Range, Low Dropout Regulator 5 ma, Wide Input Voltage Range, Low Dropout Regulator The NCP4623 is a CMOS Linear Voltage Regulator designed for wide input voltage range. The maximum operating input voltage is up to 24 V with a minimum

More information

NCP ma, 10 V, Low Dropout Regulator

NCP ma, 10 V, Low Dropout Regulator 15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage

More information

NCP ma, 10 V, Low Dropout Regulator

NCP ma, 10 V, Low Dropout Regulator ma, V, Low Dropout Regulator The NCP6 is a CMOS Linear voltage regulator with ma output current capability. The device is capable of operating with input voltages up to V, with high output voltage accuracy

More information

NCP ma, Low Noise Low Dropout Regulator

NCP ma, Low Noise Low Dropout Regulator NCP468 15 ma, Low Noise Low Dropout Regulator The NCP468 is a CMOS linear voltage regulator with 15 ma output current capability. The device is available in a tiny.8x.8 mm XDFN, and has high output voltage

More information

NCP ma, Dual Rail Ultra Low Dropout Linear Regulator

NCP ma, Dual Rail Ultra Low Dropout Linear Regulator 4 ma, Dual Rail Ultra Low Dropout Linear Regulator The NCP467 is a CMOS Dual Supply Rail Linear Regulator designed to provide very low output voltages. The Dual Rail architecture which separates the power

More information

NCP694. 1A CMOS Low-Dropout Voltage Regulator

NCP694. 1A CMOS Low-Dropout Voltage Regulator A CMOS Low-Dropout Voltage Regulator The NCP694 series of fixed output super low dropout linear regulators are designed for portable battery powered applications with high output current requirement up

More information

NCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage

NCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage The is high performance linear regulator, offering a very wide operating input voltage range of up

More information

NCP59302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series

NCP59302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series NCP5932, NCV5932 3. A, Very Low-Dropout (VLDO) Fast Transient Response Regulator series The NCP5932 is a high precision, very low dropout (VLDO), low ground current positive voltage regulator that is capable

More information

NCP57302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator

NCP57302, NCV A, Very Low-Dropout (VLDO) Fast Transient Response Regulator NCP5732, NC5732 3. A, ery Low-Dropout (LDO) Fast Transient Response Regulator The NCP5732 is a high precision, very low dropout (LDO), low minimum input voltage and low ground current positive voltage

More information

NCP A Low Dropout Linear Regulator

NCP A Low Dropout Linear Regulator 1.5 A Low Dropout Linear Regulator The NCP566 low dropout linear regulator will provide 1.5 A at a fixed output voltage. The fast loop response and low dropout voltage make this regulator ideal for applications

More information

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator 25 ma Dual Output Low Dropout Linear Regulator The NCP554/NCV554 are dual output low dropout linear regulators with 2.% accuracy over the operating temperature range. They feature a fixed output voltage

More information

NCP170. Ultra Low I Q 150 ma CMOS LDO Regulator

NCP170. Ultra Low I Q 150 ma CMOS LDO Regulator NCP17 Ultra Low I Q 15 ma CMOS LDO Regulator The NCP17 series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current.

More information

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments

More information

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small

More information

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723 NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)

More information

NCV8170. Ultra Low I Q 150 ma CMOS LDO Regulator

NCV8170. Ultra Low I Q 150 ma CMOS LDO Regulator NCV817 Ultra Low I Q 15 ma CMOS LDO Regulator The NCV817 series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current.

More information

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level

More information

NCP331. Soft-Start Controlled Load Switch with Auto Discharge

NCP331. Soft-Start Controlled Load Switch with Auto Discharge Soft-Start Controlled Load Switch with Auto Discharge The NCP331 is a low Ron N channel MOSFET controlled by a soft start sequence of 2 ms for mobile applications. The very low R DS(on) allows system supplying

More information

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723 NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device

More information

NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection

NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection 3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A

More information

NCP698. Battery Powered Instruments Hand Held Instruments Camcorders and Cameras. Features PIN CONNECTIONS & MARKING DIAGRAMS

NCP698. Battery Powered Instruments Hand Held Instruments Camcorders and Cameras.  Features PIN CONNECTIONS & MARKING DIAGRAMS 5 ma CMOS Ultra Low Iq and I GND LDO Regulator with Enable This series of fixed output lowdropout linear regulators are designed for handheld communication equipment and portable battery powered applications

More information

NCP304A. Voltage Detector Series

NCP304A. Voltage Detector Series Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where

More information

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance

More information

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88 NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic

More information

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89 NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD

More information

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

More information

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications

More information

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise

More information

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive

More information

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

More information

NCP5426. LDO Regulator/Vibration Motor Driver

NCP5426. LDO Regulator/Vibration Motor Driver LDO Regulator/Vibration Motor Driver The NCP5426 series of fixed output, 15 ma low dropout linear regulators are designed to be an economical solution for a variety of applications. Each device contains

More information

NCP508. Very Low Noise, Fast Turn On, 50 ma Low Dropout Voltage Regulator

NCP508. Very Low Noise, Fast Turn On, 50 ma Low Dropout Voltage Regulator NCP58 Very Low Noise, Fast Turn On, 5 ma Low Dropout Voltage Regulator The NCP58 is a 5 ma low noise voltage regulator, designed to exhibit fast turn on time and high ripple rejection. Each device contains

More information

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space

More information

NCP334, NCP335. 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path

NCP334, NCP335. 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path The NCP334 and NCP335 are low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy.

More information

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device

More information

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors

More information

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output

More information

NSQA6V8AW5T2 Series Transient Voltage Suppressor

NSQA6V8AW5T2 Series Transient Voltage Suppressor Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.

More information

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC

More information

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (

More information

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving

More information

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88 NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable

More information

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra

More information

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75 Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N

More information

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment

More information

NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features

NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

More information

NTLUF4189NZ Power MOSFET and Schottky Diode

NTLUF4189NZ Power MOSFET and Schottky Diode NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board

More information

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen

More information

NCP170. Ultra Low I Q 150 ma CMOS LDO Regulator

NCP170. Ultra Low I Q 150 ma CMOS LDO Regulator NCP17 Ultra Low I Q 15 ma CMOS LDO Regulator The NCP17 series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current.

More information

NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.

NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant. NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)

More information

NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23

NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23 NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint

More information

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter

More information

BC846BM3T5G. General Purpose Transistor. NPN Silicon

BC846BM3T5G. General Purpose Transistor. NPN Silicon General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter

More information

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen

More information

NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70

NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70 NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications

More information

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise

More information

NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection

NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection 4-Channel EMI Filter with Integrated ESD Protection The is a four channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 200 and C = 5 pf deliver

More information

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices

More information

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23 NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive

More information

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching

More information

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device

More information

NCP553, NCV ma CMOS Low Iq NOCAP Voltage Regulator

NCP553, NCV ma CMOS Low Iq NOCAP Voltage Regulator NCP55, NCV55 8 ma CMOS Low Iq NOCAP Voltage Regulator This series of fixed output NOCAP linear regulators are designed for handheld communication equipment and portable battery powered applications which

More information

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,

More information

NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK

NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and

More information

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and

More information

MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes

More information

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface

More information

NLHV18T Channel Level Shifter

NLHV18T Channel Level Shifter 18-Channel Level Shifter The NLHV18T3244 is an 18 channel level translator designed for high voltage level shifting applications such as displays. The 18 channels are divided into twelve and two three

More information

MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package

MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive

More information

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

More information

NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier

NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier 4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference

More information

CS8183. Dual Micropower 200 ma Low Dropout Tracking Regulator/Line Driver

CS8183. Dual Micropower 200 ma Low Dropout Tracking Regulator/Line Driver Dual Micropower ma Low Dropout Tracking Regulator/Line Driver The is a dual low dropout tracking regulator designed to provide adjustable buffered output voltages that closely track (±1 mv) the reference

More information

NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection

NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection 8-Channel EMI Filter with Integrated ESD Protection The NUF841MN is an eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 12 pf

More information

NCP170. Ultra Low I Q 150 ma CMOS LDO Regulator

NCP170. Ultra Low I Q 150 ma CMOS LDO Regulator Ultra Low I Q 15 ma CMOS LDO Regulator The series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require ultra-low quiescent current. The ultra-low

More information

NCP mA, Very Low Dropout Bias Rail CMOS Voltage Regulator

NCP mA, Very Low Dropout Bias Rail CMOS Voltage Regulator NCP13 3mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP13 is a 3 ma VLDO equipped with NMOS pass transistor and a separate bias supply voltage (V BIAS ). The device provides very stable, accurate

More information

NLAS5157. Ultra-Low 0.4 SPDT Analog Switch

NLAS5157. Ultra-Low 0.4 SPDT Analog Switch Ultra-Low.4 SPDT Analog Switch The NLAS5157 is Single Pole Double Throw (SPDT) switch designed for audio systems in portable applications. The NLAS5157 features Ultra Low R ON of.4 typical at = V and.15

More information

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75 NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant

More information

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)

More information

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features. MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate

More information

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site

More information

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints. 2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power

More information

CMPWR ma SmartOR Regulator with V AUX Switch

CMPWR ma SmartOR Regulator with V AUX Switch 50 ma SmartOR Regulator with Switch Product Description The ON Semiconductor s SmartOR is a low dropout regulator that delivers up to 50 ma of load current at a fixed 3.3 V output. An internal threshold

More information

NCP400. Memory Cards Cellular Phones Digital Still Cameras and Camcorders Battery Powered Equipment. MARKING DIAGRAM.

NCP400. Memory Cards Cellular Phones Digital Still Cameras and Camcorders Battery Powered Equipment.   MARKING DIAGRAM. 150 ma CMOS Low Iq Low Dropout Voltage Regulator with Voltage Detector Output The NCP400 is an integration of a low dropout regulator and a voltage detector in a very small chip scale package. The voltage

More information

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component

More information

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for

More information

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low

More information

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed

More information

NCP A Linear Voltage Regulator with Soft Start

NCP A Linear Voltage Regulator with Soft Start 3. A Linear Voltage Regulator with SoftStart The NCP63 is a low dropout positive voltage regulator that is capable of providing a guaranteed output current of 3. A with a maximum dropout voltage of. V

More information

P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device

P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE

More information

NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70

NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70 NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint

More information

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k MUN224, MMUN224L, MUN524, DTC4YE, DTC4YM, NSBC4YF Digital Transistors (BRT) R = 0 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

MBRA320T3G Surface Mount Schottky Power Rectifier

MBRA320T3G Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction

More information

MUN5311DW1T1G Series.

MUN5311DW1T1G Series. MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single

More information

UMC2NT1, UMC3NT1, UMC5NT1

UMC2NT1, UMC3NT1, UMC5NT1 UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor

More information

NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package

NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution

More information

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes , Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,

More information

MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package

MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package MBRM12ET1G, NRVBM12ET1G, MBRM12ET3G, NRVBM12ET3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial

More information

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8 NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free

More information

MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package

MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction

More information