Low Noise JFET

Transcription

1 Over 200 million die shipped per year DESCRIPTION The is an N-channel Low Noise Junction Field Effect Transistor for low frequency and audio applications and in PIR sensor applications. The device can be offered as an un-sawn wafer, a sawn wafer or as die mounted in a customer specified package such as a T092 or a SOT package. FEATURES Low Noise. Low Leakage. Low frequency. Low power consumption. APPLICATIONS Low noise amplifier. Charge Sensitive amplifier. Audio frequency amplifier P.I.R. Sensors Microphones Hearing aids 1.0 Pad Assignment This view is with the major flat at the bottom. Page 1 of 9 This document is the property of Semefab Ltd and is furnished in confidence and upon the condition that it is neither copied nor released to a third party without prior consent.

2 1.0 ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Drain Supply voltage 25 V Drain Supply current 5 ma Operating Temperature, T O 0 to 85 C Storage Temperature, T S C 2.0 MECHANICAL SPECIFICATION PARAMETER RATING UNITS Chip size (+/- 0.02mm) LxBxH x x 0.22 (17x17x8.7) unsawn mm (mils) Chip off 0.05 mm (LxBxH), 0.1 mm (corners) Linearity of edge (Din 7184) mm Gate contact On back-side (with 1 micron thick gold) Bond pad size 0.1 x 0.1 (4 x 4) mm (mils) Ink dot diameter (typical) 0.25 mm Ink dot appearance Opaque, black matt 3.0 ELECTRICAL SPECIFICATION PARAMETER SYMBOL TEST CONDITIONS SPEC UNIT Breakdown voltage between gate and drain, source open Gate-source cut-off voltage Vcutoff Vds = 10V Ids = 1uA BVgdo Igd = 10uA >75 V Drain Current Idss Vds=10V Vgs=0V Drain source resistance Rdson Vds = 0.01V, Vgs = 0V Gate reverse leakage current Igss Vgs = -15V Vds= 0 Offset Voltage Voff Vds = 10V (See diagram in 4.0) Vgs = 0V -0.9 to -0.5 V 0.6 to 1.8 ma 250 to 650 <5 pa 0.45 to 0.8 V Page 2 of 9

3 Ids (A) Ids (A) 3.1 Electrical Curves Ids vs Vds, for Vgs steps V -0.1V -0.2V -0.3V -0.4V -0.5V -0.6V -0.7V -0.8V -0.9V -1.0V Vds (V) Ids vs Vds, for Vgs steps V -0.1V -0.2V -0.3V -0.4V -0.5V -0.6V -0.7V -0.8V -0.9V -1.0V Vds (V) Page 3 of 9

4 Cutoff (V) IDSS (A) IDSS Vs VGS Over Temperature VDS = 10V C 40C C 60C 70C 85C VGS (V) -0.5 Cutoff vs Idss Idss (ma) Page 4 of 9

5 Gm (ms) Rdson (Ohms) 650 Rdson vs Idss Idss (ma) 3.5 Gm vs Idss Idss (ma) Page 5 of 9

6 Ids (ma) Voff (V) Voff vs Vcutoff Cutoff (V) Ids vs Vgs, Vds=10V Vgs (V) Page 6 of 9

7 Gm (ms) Ids (ma) Ids vs Vgs, Vds=10V Log scale 1.E+01 1.E E-01 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 Vgs (V) 1.E-07 Gm vs Ids, Vds=10V Ids (ma) Page 7 of 9

8 4.0 Voff Diagram 10V Page 8 of 9

9 5.0 ORDERING INFORMATION Order products using the following product codes Die (Die in sawn wafer form). Wafer (Un-sawn wafers). Other packages available on request. Semefab (Scotland) Ltd. may change this specification at any time without notification. Supply of products conforms to Semefab (Scotland) Ltd.'s Terms and Conditions LIFE SUPPORT APPLICATIONS This product is not designed for use in life support appliances, devices, or systems where malfunction of these products can be reasonably expected to result in personal injury. Semefab (Scotland) Ltd customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Semefab for any damages resulting from such improper use or sale. Semefab Ltd Newark Road South Eastfield Industrial Estate Glenrothes, Fife KY7 4NS Telephone: +44 (0) Fax: +44 (0) Semefab 2013 Page 9 of 9