Part No. Speed Package Grade Remark MX23L6423ATC-90G 90ns 48 pin TSOP Commercial Pb-free A16 BYTE# VSS D15/A-1
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1 64M-BIT PAGE MODE MASK ROM FEATURES Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode) Fast access time - Random access:90ns (max.) - Page access:25ns (max.) Page size - 8 words per page Current - Operating:20mA - Standby:15uA Supply voltage - 2.7V ~ 3.6V Package - 48 pin TSOP (12mm x 20mm) Temperature - 0 C ~ 70 C for commercial grade C ~ 85 C for industrial grade Process um ORDER INFORMATION Part No. Speed Package Grade Remark MX23L6423ATC-90G 90ns 48 pin TSOP Commercial Pb-free PIN CONFIGURATION PIN DESCRIPTION 48 TSOP (Top View) Symbol A0~A21 Pin Function Address Inputs A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 A21 A18 A17 A7 A6 A5 A4 A3 A2 A A16 BYTE# VSS D15 /A-1 D7 D14 D6 D13 D5 D12 D4 VCC D11 D3 D10 D2 D9 D1 D8 D0 OE# VSS CE# A0 D0~D14 D15/A-1 CE# OE# Byte# VCC VSS Data Outputs D15 (Word Mode)/ LSB Address (Byte Mode) Chip Enable Input Output Enable Input Word/ Byte Mode Selection Power Supply Pin Ground Pin No Connection P/N:PM1179 REV. 1.8, JUL. 20,
2 MODE SELECTION CE# OE# Byte# D15/A-1 D0~D7 D8~D15 Mode Power H X X X High Z High Z - Stand-by L H X X High Z High Z - Active L L H Output D0~D7 D8~D15 Word Active L L L Input D0~D7 High Z Byte Active ABSOLUTE MAXIMUM RATINGS Item Symbol Ratings Voltage on any Pin Relative to VSS VIN -0.3V to 3.9V Ambient Operating Temperature Topr -40 C to 85 C Storage Temperature Tstg -65 C to 125 C DC CHARACTERISTICS (Ta = -40 C ~ 85 C, VCC = 2.7V~3.6V) Item Symbol MIN. MAX. Conditions Output High Voltage VOH 2.4V - IOH = -400uA Output Low Voltage VOL - 0.4V IOL = 1.6mA Input High Voltage VIH 0.7xVCC VCC+0.3 Input Low Voltage VIL -0.3V 0.8V Input Leakage Current ILI - 5uA 0V, VCC Output Leakage Current ILO - 5uA 0V, VCC Operating Current ICC - 20mA f=5mhz, CE#=VIL, OE#=VIH all output open Standby Current (CMOS) ISTB - 15uA CE#>VCC-0.2V Input Capacitance CIN - 10pF Ta = 25 C, f = 1MHZ Output Capacitance COUT - 10pF Ta = 25 C, f = 1MHZ AC CHARACTERISTICS (Ta = -40 C ~ 85 C, VCC = 2.7V~3.6V) Item Symbol 23L6423A-90 MIN. MAX. Read Cycle Time trc 90ns - Address Access Time taa - 90ns Chip Enable Access Time tce - 90ns Page Access Time tpa - 25ns Output Enable Time toe - 25ns Output Hold After Address toh 0ns - Output High Z Delay thz - 20ns Note: 1. Output high-impedance delay (thz) is measured from OE# or CE# going high, and this parameter guaranteed by design over the full voltage and temperature operating range - not tested. 2
3 AC Test Conditions Input Pulse Levels 0V~ 3.0V Input Rise and Fall Times 5ns Input Timing Level 1.5V Output Timing Level 1.5V Output Load See Figure IOH (load)=-0.4ma DOUT IOL (load)=1.6ma C<100pF Note:No output loading is present in tester load board. Active loading is used and under software programming control. Output loading capacitance includes load board's and all stray capacitance. TIMING DIAGRAM RANDOM READ ADD ADD ADD ADD tce trc CE# toe OE# taa toh thz DATA VALID VALID VALID PAGE READ A3-A21 VALID ADD (A-1),A0,A1,A2 1'st ADD 2'nd ADD 3'rd ADD taa tpa DATA VALID VALID VALID 3
4 PACKAGE INFORMATION 4
5 REVISION HISTORY Revision # Description Page Date Added access time : 70ns P1,2 JAN/27/ Modified VIH(min.) from 2.2V to 0.7xVCC P Added Pb-free package information P1 FEB/17/ Deleted access time:100ns P1, Added process:0.18um P1 MAR/02/ Added Industrial Grade P1,2 MAR/30/ Changed temperature from -25 C~85 C to -40 C~85 C P1,2 APR/15/ Added 48 ball mini BGA P1,2,6 APR/27/ Removed access time:70ns P1, Added statement P8 NOV/07/ Removed 48-BGA package P1 JUL/20/2007 5
6 Macronix's products are not designed, manufactured, or intended for use for any high risk applications in which the failure of a single component could cause death, personal injury, severe physical damage, or other substantial harm to persons or property, such as life-support systems, high temperature automotive, medical, aircraft and military application. Macronix and its suppliers will not be liable to you and/or any third party for any claims, injuries or damages that may be incurred due to use of Macronix's products in the prohibited applications. MACRONIX INTERNATIONAL CO., LTD. Headquarters Macronix, Int'l Co., Ltd. 16, Li-Hsin Road, Science Park, Hsinchu, Taiwan, R.O.C. Tel: Fax: Macronix America, Inc. 680 North McCarthy Blvd. Milpitas, CA 95035, U.S.A. Tel: Fax: sales.northamerica@macronix.com Macronix Japan Cayman Islands Ltd. NKF Bldg. 5F, 1-2 Higashida-cho, Kawasaki-ku Kawasaki-shi, Kanagawa Pref , Japan Tel: Fax: Macronix (Hong Kong) Co., Limited , 7/F, Building 9, Hong Kong Science Park, 5 Science Park West Avenue, Sha Tin, N.T. Tel: Fax: Taipei Office Macronix, Int'l Co., Ltd. 19F, 4, Min-Chuan E. Road, Sec. 3, Taipei, Taiwan, R.O.C. Tel: Fax: Macronix Europe N.V. Koningin Astridlaan 59, Bus Wemmel Belgium Tel: Fax: Singapore Office Macronix Pte. Ltd. 1 Marine Parade Central #11-03 Parkway Centre Singapore Tel: Fax: http : // MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. 6
Rev. No. History Issue Date Remark
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Rev. No. History Issue Date Remark
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Rev. No. History Issue Date Remark
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IS62WV25616DALL/DBLL, IS65WV25616DBLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEATURES High-speed access time: 35, 45, 55 ns CMOS low power operation 30 mw (typical) operating 6 µw (typical) CMOS standby TTL compatible interface
IS66WV51216DALL IS66/67WV51216DBLL
8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM FEATURES High-speed access time: 70ns (IS66WV51216DALL, ) 55ns () CMOS low power operation Single power supply Vdd = 1.7V-1.95V (IS66WV51216DALL)
16M Async Fast SRAM. Rev. No. History Issue Date 1.0 Initial issue Apr. 15,2014
Revision History Rev. No. History Issue Date 1.0 Initial issue Apr. 15,2014 1 Rev. 1.0 GENERAL DESCRIPTION The and are a 16,789,216-bit high-speed Static Random Access Memory organized as 1M(2M) words
IS61WV10248EDBLL IS64WV10248EDBLL
1M x 8 HIGH-SPEED ASYHRONOUS CMOS STATIC RAM WITH ECC FEBRUARY 2013 FEATURES High-speed access times: 8, 10, 20 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater
LY V 128K X 16 BIT HIGH SPEED CMOS SRAM
Y6112816 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Aug.12.2007 Rev. 1.1 Apr. 17.2009 Revised TEST CONDITION of ICC Revised FEATURES & ORDERING INFORMATION ead free and green
DECODER I/O DATA CONTROL CIRCUIT
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM MARCH 2006 FEATURES High-speed access time: 55ns, 70ns CMOS low power operation: 36 mw (typical) operating 12 µw (typical) CMOS standby TTL compatible
64K x 16 HIGH-SPEED CMOS STATIC RAM JUNE 2005
64K x 16 HIGH-SPEED CMOS STATIC RAM JUNE 2005 FEATURES IS61C6416AL and High-speed access time: 12 ns, 15ns Low Active Power: 175 mw (typical) Low Standby Power: 1 mw (typical) CMOS standby and High-speed
IDT71V016SA/HSA. 3.3V CMOS Static RAM 1 Meg (64K x 16-Bit)
.V CMOS Static RAM 1 Meg (4K x 1-Bit) IDT71V1SA/HSA Features 4K x 1 advanced high-speed CMOS Static RAM Equal access and cycle times Commercial: 1//1/2 Industrial: /1/2 One Chip Select plus one Output
IS61WV25616MEBLL IS64WV25616MEBLL. 256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with ADMUX & ECC FUNCTIONAL BLOCK DIAGRAM
256Kx16 HIGH SPEED ASYHRONOUS CMOS STATIC RAM with ADMUX & ECC KEY FEATURES High-speed access time: 10ns, 12ns A16, A17 Single power supply - 2.4V-3.6V VDD Ultra Low Standby Current with ZZ# pin - IZZ
DECODER I/O DATA CIRCUIT CONTROL CIRCUIT
512K x 8 HIGH-SPEED CMOS STATIC RAM APRIL 2005 FEATURES High-speed access times: 10, 12 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise immunity Easy
IS65C256AL IS62C256AL
32K x 8 LOW POR CMOS STATIC RAM JULY 2007 FEATURES Access time: 25 ns, 45 ns Low active power: 200 mw (typical) Low standby power 150 µw (typical) CMOS standby 15 mw (typical) operating Fully static operation:
IS62/65WV2568DALL IS62/65WV2568DBLL
IS62/65WV2568DALL IS62/65WV2568DBLL 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JANUARY 2013 FEATURES High-speed access time: 35ns, 45ns, 55ns CMOS low power operation 36 mw (typical) operating
IS65LV256AL IS62LV256AL
32K x 8 LOW VOLTAGE CMOS STATIC RAM MAY 2012 FEATURES High-speed access time: 20, 45 ns Automatic power-down when chip is deselected CMOS low power operation 17 µw (typical) CMOS standby 50 mw (typical)
IS61WV25616LEBLL IS64WV25616LEBLL. 256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with LATCHED ADDRESS & ECC FUNCTIONAL BLOCK DIAGRAM
256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with LATCHED ADDRESS & ECC PRELIMINARY INFORMATION MARCH 2017 KEY FEATURES High-speed access time: 12ns, 15ns Single power supply 2.4V-3.6V VDD Ultra Low
IS62C5128BL, IS65C5128BL
512K x 8 HIGH-SPEED CMOS STATIC RAM JULY 2011 FEATURES High-speed access time: 45ns Low Active Power: 50 mw (typical) Low Standby Power: 10 mw (typical) CMOS standby TTL compatible interface levels Single
OKI Semiconductor MR27V12800J
MR27V12800J 8M Word 16 Bit or 16M Word 8 Bit P2ROM FEATURES 8,388,608-word 16-bit/16,777,216-word 8-bit electrically switchable configuration 3.0 V to 3.6 V power supply Access time 80 ns MAX (MR27V12800J-xxxTN)
Distributed by: www.jameco.com 1-00-31-4242 The content and copyrights of the attached material are the property of its owner. FEATURES Wide operation voltage : 2.4V ~ 5.5V Very low power consumption :
IS62WV10248EALL/BLL IS65WV10248EALL/BLL. 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES High-speed access time: 45ns, 55ns CMOS low power operation 36 mw (typical) operating TTL compatible interface levels Single power supply
IS62WV6416ALL IS62WV6416BLL
IS62WV6416ALL IS62WV6416BLL 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM JANUARY 2008 FEATURES High-speed access time: 45ns, 55ns CMOS low power operation: 30 mw (typical) operating 15 µw (typical)
HT27C020 OTP CMOS 256K 8-Bit EPROM
OTP CMOS 256K 8-Bit EPROM Features Operating voltage: +5.0V Programming voltage V PP=12.5V±0.2V V CC=6.0V±0.2V High-reliability CMOS technology Latch-up immunity to 100mA from -1.0V to V CC+1.0V CMOS and
IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL
512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY OCTOBER 2009 FEATURES High-speed access times: 8, 10, 20 ns High-performance, low-power CMOS process Multiple center power and ground
SRM2B256SLMX55/70/10
256K-BIT STATIC RAM Wide Temperature Range Extremely Low Standby Current Access Time 100ns (2.7V) 55ns (4.5V) 32,768 Words 8-Bit Asynchronous DESCRIPTION The SRM2B256SLMX is a low voltage operating 32,768
DECODER I/O DATA CIRCUIT CONTROL CIRCUIT
32K x 8 LOW VOLTAGE CMOS STATIC RAM June 2005 FEATURES High-speed access times: -- 8, 10, 12, 15 ns Automatic power-down when chip is deselected CMOS low power operation -- 345 mw (max.) operating -- 7
IS61WV3216DALL/DALS IS61WV3216DBLL/DBLS IS64WV3216DBLL/DBLS
IS61WV3216DALL/DALS IS61WV3216DBLL/DBLS 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM MAY 2012 FEATURES HIGH SPEED: (IS61/64WV3216DALL/DBLL) High-speed access time: 8, 10, 12, 20 ns Low Active Power:
IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY MAY 2012 FEATURES High-speed access times: 8, 10, 20 ns High-performance, low-power CMOS process Multiple center power and ground pins for
IS63LV1024 IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT FEATURES High-speed access times: 8, 10, 12 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable DESCRIPTION. SPEED ( ns ) STANDBY. ( ICCSB1, Max ) BLOCK DIAGRAM
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable FEATURES DESCRIPTION Very low operation voltage : 45 ~ 55V Very low power consumption : = 50V C-grade: 40mA (Max) operating current
IS62WV2568ALL IS62WV2568BLL
IS62WV2568ALL IS62WV2568BLL 256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM Long-term Support NOVEMBER 2016 FEATURES High-speed access time: 45ns, 55ns, 70ns CMOS low power operation 36 mw (typical)
Functional Block Diagram. Row Decoder. 512 x 512 Memory Array. Column I/O. Input Data Circuit. Column Decoder A 9 A 14. Control Circuit
32K X 8 STATIC RAM PRELIMINARY Features High-speed: 35, 70 ns Ultra low DC operating current of 5mA (max.) Low Power Dissipation: TTL Standby: 3 ma (Max.) CMOS Standby: 20 µa (Max.) Fully static operation
HT23C128 CMOS 16K 8-Bit Mask ROM
CMOS 16K8-Bit Mask ROM Features Operating voltage: 2.7V~5.5V Low power consumption Operation: 25mA max. (V CC =5V 10mA max. (V CC =3V Standby: 30A max. (V CC =5V 10A max. (V CC =3V Access time: 150ns max.
IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS
256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) High-speed access time: 10ns, 12 ns Low Active Power: 150 mw (typical) Low Standby Power: 10 mw (typical) CMOS standby LOW POR: