M. Shur 1, A. Gu,n 1, and T. Y2erdal 2

Transcription

1 Terahertz SPICE for Nanometer Scale Field Effect Transistors M. Shur 1, A. Gu,n 1, and T. Y2erdal 2 1 Physics, Applied Physics, and Astronomy Electrical, Computer, and Systems Engineering Rensselaer Polytechnic Ins,tuteTroy, New York h2p:// 2 University of Trondheim, Norway Presented at MOS- AK Workshop Washington DC December 11,

2 Outline Background: ballis,c transport and electron iner,a Mo,va,on: SI penetrates THz range Terahertz SPICE Applica,on to Si Plasmonic FETs Applica,on to InGaAs plasmonic FETs Temperature dependence of the response Conclusions and future work 2

3 Mean Free Path and Technology Nodes From M. Shur, "Ballistic transport and terahertz electronics," 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), pp.1-7, Dec

4 Ballistic Transport M. S. Shur and L. F. Eastman (1979) From Ballistic Transistor Has Virtually Unimpeded Current Flow (Dec. 6, 1999) From 4

5 THz response of CMOS (non-resonant) NFETs PFETs First demonstra?on of terahertz and sub- terahertz response in silicon CMOS (Response up to over 4 THz) From W. Stillman, F. Guarin, V. Yu. Kachorovskii, N. Pala, S. Rumyantsev, M.S. Shur, and D. Veksler, Nanometer Scale Complementary Silicon MOSFETs as Detectors of Terahertz and Sub-terahertz Radiation, in Abstracts of IEEE sensors Conference, Atlanta, GA, October 2007, pp

6 Spa?al decay of plasma waves at different frequencies Gate S" 2D Gas D" 1.0 Normalized plasma wave amplitude THz 0.6 THz 1.63 THz 2.55 THz L (um) L (nm) After A. Gutin, S. Nahar, M. Hella, M. Shur, "Modeling Terahertz Plasmonic Si FETs With SPICE," IEEE Transactions on Terahertz Science and Technology, vol.3, no.5, pp , Sept

7 THz SPICE Model G R g Gate C gs C gd S D Substrate R s R ch R d Traditional SPICE R g n R g n R g n R g n R g n L n L n L n L n L n L n THz SPICE After A. Gutin, S. Nahar, M. Hella, M. Shur, "Modeling Terahertz Plasmonic Si FETs With SPICE," IEEE Transactions on Terahertz Science and Technology, vol.3, no.5, pp , Sept

8 Experimental Setup for Model Valida?on BWO Lock-in LabView SR830 Chopper Parabolic Mirror Sample XYZ translation stage! U g 2400S Measuring terahertz response U gs! U a! δu R L!! V Equivalent SPICE test bench gnd After A. Gutin, S. Nahar, M. Hella, M. Shur, "Modeling Terahertz Plasmonic Si FETs With SPICE," IEEE Transactions on Terahertz Science and Technology, vol.3, no.5, pp , Sept

9 Model Valida?on for GaAs HEMT Response (µv) THz SPICE Analytical U GT (V) Analy&cal model and simulated by THz SPICE Response (mv) S imulated Measured mw mw mw U GT (V) Measured and simulated results 160 mw After A. Gutin, T. Ytterdal, V. Kachorovskii, A. Muraviev, M. Shur, THz SPICE for Modeling Detectors and Non-quadratic Response at Large Input Signal, IEEE Sensors Journal, vol.13, no.1, pp.55,62, Jan

10 Simulated Si NMOS Response for Different Gate Lengths at 200 GHz gt THz response at different technology nodes simulated at 200 GHz After A. Gutin, S. Nahar, M. Hella, M. Shur, "Modeling Terahertz Plasmonic Si FETs With SPICE," IEEE Transactions on Terahertz Science and Technology, vol.3, no.5, pp , Sept

11 Frequency Dependence for Si Technology Nodes nm 65 nm 32 nm 22 nm 14 nm Respone (a.u.) Frequency (THz) Maximum THz response as a func&on of frequency at different technology nodes After A. Gutin, S. Nahar, M. Hella, M. Shur, "Modeling Terahertz Plasmonic Si FETs With SPICE," IEEE Transactions on Terahertz Science and Technology, vol.3, no.5, pp , Sept

12 Subthreshold Temperature Dependence in GaAs HEMTs 1E-3 1E-4 Drain current (A) 1E-5 1E-6 1E-7 1E-8 1E-9 10K 20K 40K 77K 120K 200K 300K 1E-10 1E-11 1E Gate voltage Responsivity in the subthreshold region is roughly propor?onal to the slope 12

13 Temperature Dependence of GaAs HEMT Response K 20K 120K 40K 70K 250K 300K 100 Response (uv) Maximum Response (uv) Gate voltage Temperature (K) Cooling plasmonic detectors can improve responsivity and NEP by several orders of magnitude and allow passive detec?on 13

14 Conclusions and Future Work Transport is ballistic in submicron transistors, and the physics is very different: silicon CMOS penetrated THz range Ultra short channel transistors support plasma waves in THz range with the channel acting as a resonance cavity THz compact SPICE model accurately reproduces THz response due to decaying plasma waves Future work: account for resonant plasma wave response in high mobility systems 14

15 Acknowledgements This work was made possible, in part, by SRC and the Texas Analog Center of Excellence (TxACE) under task number The work at RPI was also par,ally supported by the by Army Research Laboratory under ARL MSME Alliance. 15