GaN is Crushing Silicon. EPC - The Leader in GaN Technology IEEE PELS

Transcription

1 GaN is Crushing Silicon EPC - The Leader in GaN Technology IEEE PELS

2 Agenda How egan FETs work Hard Switched DC-DC converters High Efficiency point-of-load converter Envelope Tracking buck converter Resonant DC-DC Converters Bus Converter ZVS Class D Wireless Power Transmission A Look into the Future Q & A egan is a registered trademark of Efficient Power Conversion Corporation EPC - The Leader in GaN Technology IEEE PELS

3 Power Switch Wish List Lower On Resistance Faster Less Capacitance Smaller Lower Cost EPC - The Leader in GaN Technology IEEE PELS

4 Material Comparison EPC - The Leader in GaN Technology IEEE PELS

5 State of the Art Theoretical on-resistance vs. blocking voltage capability for silicon, silicon carbide, and gallium nitride. EPC - The Leader in GaN Technology IEEE PELS

6 GaN Magic V S AlGaN GaN (Piezoelectric) D EPC - The Leader in GaN Technology IEEE PELS

7 Device Construction Concept Source Gate AlGaN Protection Dielectric Drain GaN Silicon Forms the foundation for a Depletion Mode device EPC - The Leader in GaN Technology IEEE PELS

8 Enhancement Mode egan FET S D A positive voltage from Gate-To-Source establishes an electron gas under the gate EPC - The Leader in GaN Technology IEEE PELS

9 Body Diode? No Minority Carriers = Zero Q rr S D A positive voltage from Gate-To-Drain also establishes an electron gas under the gate enabling reverse conduction EPC - The Leader in GaN Technology IEEE PELS

10 Cross Section of an egan FET EPC - The Leader in GaN Technology IEEE PELS

11 egan FET Low Voltage Product Family Solder side View Gate 2.1 x 1.6 mm Substrate (Connect to Source on PWB) Drain Source Part Number Package (mm) V DS (V) V GS (V) R (mω) Q V Typ. (nc) EPC - The Leader in GaN Technology IEEE PELS Q GS Typ. (nc) Q GD Typ. (nc) R G Typ. (Ω) V th Typ. (V) EPC2015 LGA 4.1x EPC2014 LGA 1.7x EPC2001 LGA 4.1x EPC2016 LGA 2.1x EPC2007 LGA 1.7x EPC2010 LGA 3.6x EPC2012 LGA 1.7x Q RR (nc) I D (A) T J Max. ( C)

12 Ultra High Frequency egan FETs EPC Part No. BV (V) Max. R DS(ON) (mω) (V GS = 5V, Min. Peak Id (A) (Pulsed, 25 o C, I D = 0.5 A) T pulse = 300 µs) Typical Charge (pc) Q G Q GD Q GS Q OSS Q RR Typical Capacitance (pf) (V DS = 20 V; V GS = 0 V) C ISS C OSS C RSS EPC EPC EPC EPC EPC EPC EPC EPC * Preliminary Data Subject to Change without Notice EPC - The Leader in GaN Technology IEEE PELS

13 Threshold vs. Temperature Normalized Thershold Voltage egan FET MOSFET A Junction Temperature ( C) EPC - The Leader in GaN Technology IEEE PELS

14 Total Gate Charge EPC2001 = 100 V, 5.6 mω typ. BSC057N08 = 80 V, 4.7 mω typ. BSC057N08NS EPC - The Leader in GaN Technology IEEE PELS

15 egan FET Reverse Conduction MOSFET + Q RR egan FET + Zero Q RR EPC - The Leader in GaN Technology IEEE PELS

16 Conduction Figure of Merit Q G (nc) Conduction Figure of Merit 200 V EPC 200 V Si 100 V EPC 100 V Si 40 V EPC 40 V Si 1 R DS(ON) (mω) EPC - The Leader in GaN Technology IEEE PELS

17 egan FET Loss Mechanisms Like A MOSFET I²R Conduction Loss Capacitive Switching Losses Gate Drive Losses V I Switching Loss Not Like A MOSFET High Reverse Conduction Loss No Body Diode Reverse Recovery Loss Can be much, much better than comparable silicon MOSFET EPC - The Leader in GaN Technology IEEE PELS

18 Design Examples EPC - The Leader in GaN Technology IEEE PELS

19 Design Example Hard-Switched DC-DC Conversion Buck Converter Envelope Tracking Resonant DC-DC Conversion Resonant Bus Converter Wireless Power EPC - The Leader in GaN Technology IEEE PELS

20 Ideal Hard Switching t VR t CF V IN V DS I OFF I DS V GS V PL V TH t EPC - The Leader in GaN Technology IEEE PELS

21 100 V Device Comparison 90 FOM = (Q GD +Q GS2 ) R DSON (pc Ω) V egan FET Q GS2 Q GD Q GS2 Q GD 100 V MOSFETs Q GS2 Q GS2 Q GS2 Q GD Q GD Q GD 0 EPC 2001 FDMC86160 SiR870ADP BSZ150N10LS3 G AON7290 V DS =0.5*V DS, I DS = 10 A EPC - The Leader in GaN Technology IEEE PELS

22 egan FET vs MOSFET Efficiency (%) V egan FET 40 V Si MOSFET Buck Converter 500 khz 1 MHz V Si MOSFET Input Voltage (V) 100 V egan FET 80 V Si MOSFET Measured Efficiency V OUT =1.2 V I OUT =10 A EPC - The Leader in GaN Technology IEEE PELS

23 Low Voltage Device Comparison FOM=(Q GD +Q GS2 )*R DSON (pc*ω) V egan FET Q GS2 Q GD 40 V MOSFETs Q GS2 Q GS2 Q GD Q GD 25 V MOSFETs Q GS2 Q GS2 Q GD Q GD 0 EPC2015 BSZ097N04LSG BSZ040N04LSG BSZ060NE2LS BSZ036NE2LS V DS =12 V, I DS = 20 A EPC - The Leader in GaN Technology IEEE PELS

24 Optimal Layout Top View Side View Top View Inner Layer 1 Ref: D. Reusch, J. Strydom, Understanding the Effect of PCB Layout on Circuit Performance in a High Frequency Gallium Nitride Based Point of Load Converter, APEC 2013 EPC - The Leader in GaN Technology IEEE PELS

25 egan FET vs. MOSFET Efficiency Efficiency (%) V Discrete egan FET 40 V Discrete MOSFET 25 V Discrete MOSFET 30 V Module MOSFET Output Current (A) V IN =12 V V OUT =1.2 V f sw =1 MHz L=300 nh EPC - The Leader in GaN Technology IEEE PELS

26 Impact of Parasitics on Overshoot 40 V egan FET 30 V Si MOSFET Module 40 V Si MOSFET Switch Node Voltage 3 V/Div 20 ns/ div V IN =12 V V OUT =1.2 V I OUT =20 A f sw =1 MHz L=300 nh egan FET T/SR: EPC2015 MOSFET T:BSZ097N04 SR:BSZ040N04 MOSFET Module: CSD97370Q5M EPC - The Leader in GaN Technology IEEE PELS

27 EPC9107 Demonstration Board V IN =12-28 V V OUT =3.3 V I OUT =15 A f sw =1 MHz 2 x EPC2015 ~3V 15 A OUT V IN =28 V Switching Node Voltage V IN =28 V, I OUT =15 A ~1.1ns rise 15 A 20ns 5 V/ div EPC - The Leader in GaN Technology IEEE PELS

28 Higher Current?...Parallel x EPC x EPC x EPC2001 Efficiency (%) T 1 T 4 SR 1 SR 4 SR 2 SR 3 T 2 T Output Current (A) V IN =48 V, V OUT =12 V, f sw =300 khz EPC - The Leader in GaN Technology IEEE PELS

29 Envelope Tracking (ET) EPC - The Leader in GaN Technology IEEE PELS

30 Envelope Tracking W/O ET With ET Red represents wasted energy dissipated as heat Envelope Tracking can double base station efficiency. EPC - The Leader in GaN Technology IEEE PELS

31 Envelope Tracking Supply ET power supply topologies vary Hybrid / linear-assisted Buck* (one option) Buck ~10% Bandwidth ~ 90% Power Linear AMP ~ 10% Power Highest 90% of Bandwidth * V. Yousefzadeh, et. al, Efficiency optimization in linear-assisted switching power converters for envelope tracking in RF power amplifiers, ISCAS 2005 EPC - The Leader in GaN Technology IEEE PELS

32 Efficiency Efficiency 95% 90% 85% 80% 5 MHz V IN =42 V V OUT =20 V 10 MHz 75% 70% Output current (A) EPC V 230 mω EPC - The Leader in GaN Technology IEEE PELS

33 Resonant Converters EPC - The Leader in GaN Technology IEEE PELS

34 Resonant Bus Converter High Frequency DC/DC Transformer L K1 S 1 V GS(Q2,Q4) V GS(S2) Q 1 Q 4 4:1 I LK1 V GS(Q1,Q3) V GS(S1) D V IN + - I PRIM C O I PRIM I LM 48V Q 2 Q 3 L M V DS(Q1) t ZVS V IN L K2 I Lk1 S 2 t 0 t 1 t 2 t 3 Ref: Y. Ren, M. Xu, J. Sun, and F. C. Lee, A family of high power density unregulated bus converters, IEEE Trans. Power Electron., vol. 20, no. 5, pp , Sep EPC - The Leader in GaN Technology IEEE PELS

35 P G = Q G V DR f s Gate Charge egan FET MOSFET Q G *R DS(on) (nc*mω) x Q G *R DS(on) 4x 6x Breakdown Voltage (V) EPC - The Leader in GaN Technology IEEE PELS

36 P G = Q G V DR f s Output Charge Q OSS *R DS(on) (nc*mω) x egan FET MOSFET 1.6x Q OSS *R DS(on) 2x Breakdown Voltage (V) EPC - The Leader in GaN Technology IEEE PELS

37 egan FET vs. MOSFET Resonant Capacitors Secondary Devices Transformer Primary Devices Input Capacitors MOSFET vs. egan FET EPC - The Leader in GaN Technology IEEE PELS

38 ZVS Switching Comparison T ZVS = 42 ns egan FET V DS MOSFET V DS T ZVS = 87 ns MOSFET V GS egan FET V GS f sw = 1.2 MHz, V IN = 48 V, and V OUT 12 V EPC - The Leader in GaN Technology IEEE PELS

39 Duty Cycle Comparison D egan FET = 42% D MOSFET = 34% MOSFET V GS egan FET V DS egan FET V GS MOSFET V DS f sw = 1.2 MHz, V IN = 48 V, and V OUT = 12 V EPC - The Leader in GaN Technology IEEE PELS

40 Efficiency Comparison Efficiency (%) MHz egan FET 1.2 MHz MOSFET 10 W 12 W 14 W Power Loss (W) MHz MOSFET 5 A 1.2 MHz egan FET Output Current (A) Output Current (A) f sw = 1.2 MHz, V IN = 48 V, and V OUT 12 V EPC - The Leader in GaN Technology IEEE PELS

41 Resonant Converter Summary egan FETs improve high frequency resonant converter performance Lower output charge Lower gate charge More power delivery per cycle EPC - The Leader in GaN Technology IEEE PELS

42 Why Wireless Power? egan FETs enable higher efficiency and operation at safer frequencies The global wireless charging market is estimated to grow to $10B by 2018, a CAGR of 42.6% EPC - The Leader in GaN Technology IEEE PELS

43 Experimental System Setup Coil Feedback egan FETs RF connection Device Coil Device Board 25mm 50mm Source Board Source Coil RF connection EPC - The Leader in GaN Technology IEEE PELS

44 Wireless Coil-set Overview Simplified representation of coil-set for easy comparison between topologies C devs L devs L src L dev C devp C out R DCload Z load Coil Set EPC - The Leader in GaN Technology IEEE PELS

45 Class E Overview Switch voltage rating = > 3.56 Supply (V DD ). C OSS absorbed into matching network. V DD V / I + L RFck L e C s 3.56 x V DD V DS Q 1 C sh I D Z load 50% Ideal Waveforms time EPC - The Leader in GaN Technology IEEE PELS

46 ZVS Voltage Mode Class D C OSS Voltage is transitioned by the ZVS tank Lower egan FET C OSS leads to higher available duty cycle Highest system efficiency Q 1 C sp + V DD V / I V DD L m V DS I D Q 2 C m Z load ZVS tank 50% time Ideal Waveforms EPC - The Leader in GaN Technology IEEE PELS

47 Efficiency Efficiency [%] MHz, 23.6 Ω Load, egan FET EPC 2012 EPC 2014 EPC Output Power [W] EPC 2007 ZVS-CD SE-CE CM-CD VM-CD egan FETs enable the highest efficiency in all topologies using 6.78 MHz and MHz frequencies. EPC - The Leader in GaN Technology IEEE PELS

48 Impact of Load Per FET Power loss [mw] ZVS-CD SE-CE CM-CD VM-CD DC Load Resistance [Ω] ZVS class D has higher efficiency and a broader operating range than class E. EPC - The Leader in GaN Technology IEEE PELS

49 A Look into the Future EPC - The Leader in GaN Technology IEEE PELS

50 Silicon vs. egan Transistor Costs Starting Material Epi Growth Wafer Fab Test Assembly lower lower higher lower same lower ~same? lower same lower OVERALL higher lower! EPC - The Leader in GaN Technology IEEE PELS

51 EPC Into the Future Mass Production 40 V V ~500 MHz Ultra High Frequency Family 1-3 GHz Launched Sept 2013 Higher Current 45 A Higher Voltage 600 V More functions on a chip Monolithic half bridge Driver on power chip Next Generation Devices 2 x FOM Improvement EPC - The Leader in GaN Technology IEEE PELS

52 Summary egan FETs enable exciting new applications have the potential to replace silicon power MOSFETs are straightforward to use, but they can t just drop them into a MOSFET socket. Some R&D is needed start today! EPC - The Leader in GaN Technology IEEE PELS