Bibliography 331. Hempel, H-P., Power Semiconductor Handbook, Semikron International, Nuremberg,

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1 Bibliography The following books are recommended for reading and reference purposes. Bar-Lev, A., Semiconductors and Electronic Devices, Prentice/Hall International, Bedford, B. D. and Hoft, R. G., Principles of Inverter Circuits, John Wiley and Sons, New York, Bird, B. M. and King, K. G., Introduction to Power Electronics, John Wiley and Sons, New York, Blicher, A., Thyristor Physics, Springer, New York, Chryssis, G., High Frequency Switching Power Supplies, McGraw-Hill, Davis, R. M., Power Diode and Thyristor Circuits, Peter Peregrinus, London, Dewan, S. B. and Straughen, A., Power Semiconductor Circuits, John Wiley and Sons, New York, Finney, D., The Power Thyristor and its Applications, McGraw-Hill, Fishenden, M. and Saunders, O. A., An Introduction to Heat Transfer, Oxford University Press, Fraser, D. A., The Physics of Semiconductor Devices, Oxford University Press, Gentry, F. E. et al., Semiconductor Controlled Rectifiers: Principles and Application of pnpn Devices, Prentice/Hall, Ghandhi, S. K., Semiconductor Power Devices, John Wiley-Interscience. New York,1977. Graiham, D. R. et al., SCR Manual, General Electric Company, 6th edition, Grove, A. S., Physics and Technology of Semiconductor Devices, John Wiley and Sons. New York, Gyugyi, L and Pelly, B. R., Static Power Frequency Changers, John Wiley and Sons, New York, Harnden, J. D. and Golden, F. B., Power Semiconductor Applications, Vols I and II, IEEE Press,

2 Bibliography 331 Hempel, H-P., Power Semiconductor Handbook, Semikron International, Nuremberg, Hnatek, E. R, Design of Switch Mode Power Supplies, Van Nostrand Reinhold, Hoffman, A. and Stocker, K. (Ed.), Thyristor-Handbuch, Siemens, Berlin, Karady, G., 'High-Power Electronic Devices' in Advances in Electronics and Electron Physics, Vol. 41, Academic Press, Kusko, A., Solid State D. C Motor Drives, The MIT Press, Lander, C. W., Power Electronics, McGraw-Hill, Mazda, F. F., Thyristor Control, John Wiley and Sons, New York, McMurray, W., The Theory and Design of Cycloconverters, The MIT Press, Murphy, J. M. D., Thyristor Control of A.C Motors, Pergamon, London, Oxner, E. S., Power FET's and their Applications, Prentice/Hall, Pelly, B. R, Thyristor Phase-Controlled Converters and Cycloconverters, John Wiley and Sons, New York, Peter, J. M., The Power Transistor in its Environment, Thomson-CSF, Sescosem, Phillips, A. B., Transistor Engineering, McGraw-Hill, Ramshaw, R S., Power Electronics, Chapman and Hall, Sanders, C. W., Power Electronics, McGraw-Hill, Schaefer, J., Rectifier Circuits, John Wiley and Sons, New York, Smith, R A., Semiconductors, Cambridge University Press, Streetman, B. G., Solid State Electronic Devices, Prentice/Hall International, 2nd edition, Sze, S. M., Physics of Semiconductor Devices, John Wiley and Sons, 2nd edition, Takuechi, T. J., Theory of SCR Circuits and Application to Motor Control, Tokyo Electrical Engineering College Press, Van der Ziel, A., Solid State PhYSical Electronics, Prentice/Hall International, 3rd edition, Wolf, H. F., Semiconductors, John Wiley-Inter science, Wood, P., Switching Power Converters, Van Nostrand Reinhold, Yang, E. S., Fundamentals of Semiconductor Devices, McGraw-Hill, 1978.

3 Index ac regulators 249 integral-half-cycle 257 open-delta 255 open-star 256 single-phase 249 tap-changing 258 three-phase 251 thyristor-diode 254 ac regulators with diodes 254 acceptor 4 ambient 90, 93 amplifying gate 41,42,87 anode 36, 79,81 arc voltage 199 auxiliary thyristor 266 avalanche breakdown 11,29,39 avalanche multiplication 12, 26, 38,61 barrier potential 21 base current 26,69, 133 base drive 68, 136 base spreading resistance 29 base terminal 25 base transport factor 25,68 base widening 67, 68 bevelling 1 7, 36 bipolar diode 4, 8 bipolar transistor 23,59,105,113, 133 blocking voltage 36 breakdown first 29,65 second 30, 64 breakovervoltage 39,41,79 bridge converters 215 bridge inverters 282 bridge rectifiers 222,237 bridge with freewheeling diode 219, 224,239,241,243 capacitance input 74,77,125 junction 68 output 74 reverse transfer 74 catch winding 174 cathode 36 characteristics of diodes 55 fuses 198,207 thyristors 36, 78 transistors 59, 71, 124 charge 57, 192 chopper 264 collector current 26,113,133 collector terminal 25 collector-emitter voltage 27, 59, 67 commutating capacitance 270,275, 277 commutating capacitor 265,270 commutation auxiliary 292,297 complementary 292,294 dc side 292 forced 84, 264 line 249 load 84,264 natural 84 source 264 commutation circuits 264, 277 commutation cycle 267,

4 Index 333 commutation in current-fed inverters 304 commutation in inverters 292 conduction heat 90,100 simultaneous 292 conduction in semiconductors 90 conduction loss 90, 100 conductivity, elect! ical 3 constant current 72 constant current inverter 282, 304 constant resistance 71 constant voltage inverter 282, 283 controlled converter 215 controlled rectifiers 36, 78 convection forced 95 natural 92 converter balanced 309,324 boost 314 buck 309 buck-boost 314,316 fly back 314 forward 309 push-pull 324 ringing choke 314 converters bidirectional 215 bridge 327 controlled 215, 239 fully controlled 215, 239 half-controlled 215 single-phase bridge 224 uncontrolled 215, 233 unidirectional 215 cooling air 92 forced air 93 cooling by convection 92 cooling of semiconductor devices 90 crowbar 207 current base 26,68 continuous 310,315,318 discontinuous 249,312,315,318 gate 36,79 holding 81 latching 10,39,81 peak let-through 198 prospective fault 198 current amplification factor 27,67 current crowding 28, 94 current defocussing 29 current focussing 29,45 current ratings 54, 64 current sharing 194 current tailing 134 current transfer ratio 26, 36 cyc1oconverter 159 negative group 259 positive group 159 damping factor 166 Darlington transistor pair 151 dc line commutation 264 dc link 301 dc supply side commutation 292 dc switching regulators 309 delay, angle of 224,231,241,249, 259 delay time 68, 81 depletion layer 8 depletion mode 51 derating, percentage 195 design base drive 136 gate drive 131,159 heat sink 100 smps 319 snubber 139,154,165,170 di/dt, initial 41,94,169,194 diffusion 5 diode bridge 222,237 epitaxial 1 7 fast recovery 16,35 parasitic 35 p-i-n 18,38,50 pn 3,42 Schottky 20, 134 diodes avalanche of 16 characteristics of 55 construction of 16 forward loss in 102 parallel operation of 194 series operation of 191 switching behaviour of 58, 191 discrimination 198 displacement factor 262 distortion factor 262 dmos 32 donor 3 dopant 3 drain 30,71

5 334 dvjdt 35 applied 39,82 reapplied 268, 279 efficiency, load 259, 262 electric field stopper 42 electrons 3,25,32 emissivity 93 emitter crowding 29,68 emitterswitch 153 emitter terminal 25 energy, trapped 272,279,297 energy recovery 173 enhancement mode 31,32,51 epi-diode 1 7 epitaxial 4,5,17,24,32 equal area criterion 217 extinction angle 21 7, 218 extrinsic 3 filter 210, 309 firing angle 224 forced commutation 264, 282 forced convection 93 forward recovery 55 freewheeling diodes 118,219,283 frequency conversion 259 full wave 222 fuses current limiting 198 /2 t of 199 protection by 201 ratings and characteristics of 198 fuses in dc circuits 203 gate, amplifying 41,87 gate characteristics 80, 132 gate drive 125,159,162 gate pilot 41 gate pulse 160 gate ratings 79 gate terminal 30, 36 gate turn-off thyristor 45,85, 164 generation-recombination 26 graphical analysis 98 guard ring 1 7 half-controlled 215,224,239 half-wave 216,227 harmonics 215,247,259,282 heat sink 90,92,100,106 heat transfer 91 Index holding current 81 hot spot 29 impedance thermal 95, 106 transient thermal 95, 106 impulse commutation 264,270, 277,279,297 injection efficiency 26,68 instability, thermal 13,16,64,68 integral-half-cycle control 256 interdigitation 29,45 intergroup reactor 259 intrinsic carrier concentration 3, 8 inversion 215,233 inverter single-phase 283 static 283 three-phase bridge 288,306 inverter with inductive load 282 inverters bridge 282,304 commutation of 292 control of 288, 300 current-fed 282,304 pulse-width modulation 304 voltage-fed 282 inverting mode 233 ion implantation 4,6, 17 /2 t of fuses, pre-arcing 199 i-region 18 junction pn 4,8 virtual 53, 55 junction breakdown 10 junction temperature 90 latching current 10,39,81 lateral base resistance 29 L-C circuit 268,270 leakage current 40 load current capacitive 113 continuous 310 discontinuous 312 inductive 116 resistive 113 loop gain 38, 39 loss off-state 99 on-state 100, 102

6 snubber 118,144,147,150 switching transient 99, 102 majority carriers 4, 35 Miller effect 78, 125, 132 minority carriers 4, 35 modulation multi-pulse 301 pulse-width 304 selected notching 301 single-pulse 301 mosfet 23,70, 106, 124 natural commutation 84 natural convection 92 n-channe1 43 neutron transmutation doping 4 noise 132,210 n-type 3 ohmic contacts 23 oil cooling 93 on-resistance 33 overcurrent protection 187,198,207 overvoltage protection 204,207 parallel connection of devices 187 p-channe1 34 phase angle control 224 piecewise-linear 13 pn junction 4,8 potential barrier 21 power 87 power dissipation 93 power factor 259,262 power transistor 23,59,70 protection overcurrent 187, 198, 207 overvo1tage 204, 207 protection by fuses 198 p-type 4 pulse number 215,245 pulse-width control 300 pulse-width modulation 304 punch-through 10,29,41,42 Q-factor 268,272,279 quasi-square wave 283 radio frequency interference conducted 210 radiated 210 Index ratings current 54, 79 maximum 53, 70 ratings of fuses 198 R-C circuit 35, 118, 165,264 recombination lifetime 4 recovery active 176,184 forward 55 hard 58 passive 173, 177, 184 reverse 57, 102, 120 soft 58 rectification 215 rectifier 8 single-phase bridge 224 three-phase bridge 237 rectifier ripple 221, 224 rectifying mode 215 regeneration 37 regulators (ac) 249 integral half-cycle 257 open-delta 255 open-star 256 single-phase 249 tap changing 258 thyristor-diode 254 with rectifiers 254 regulators (switching) step-down 309,314,322 step-up 314,322 resistance base 29 thermal 55 resonant frequency 275 reverse recovery 57,102,192 reverse recovery time 57 reverse-conducting thyristor 42 R-L circuit 216 safe operating area 63,94, 113, 147 saturable reactors 147,169 saturation, transistor 27, 60 saturation voltage 67 Schottky diode 20, 134, 138 scr 36 selected harmonic reduction 301 selenium suppressors 206 semiconductor intrinsic 3 n-type 3 p-type 4 series connection of devices

7 336 sharing parallel 1 94 series 187 shorted cathode 40 silicon 3 silicon dioxide 6,30 silicon-controlled rectifier 36 simultaneous conduction 136, 292, 304,308 single-phase bridge 222, 283 snap-off 58,169 snubber energy recovery 173 R-C 118,165,195 unified 150,184 snubber circuit turn-off 118,140,165 turn-on 144,169,173 source terminal 30 space charge layer 8, 16,42 state cut-off 27 on- 27 step response 165, 1 70 storage charge 69 superposition 98 surge suppressors 204 sustaining current 59 sustaining voltage 30 switched-mode power supply 176, 184,309 switching loss 99 switching regulators 309 switching time 99 switching-aid circuits 139 tap-changer, thyristor 258 temperature ambient 90 case 65,91 junction 66,90 temperature ratings 54 temperature rise 90 thermal conductance 92 thermal derating 65 thermal impedance, transient 95 thermal inertia 96 thermal instability 16 thermal resistance 55,90 thermal runaway 54 threshold voltage 32, 125 thyristor amplifying gate 41 Index asymmetrical 42 field-controlled 50 gate turn-off 45,85, 164 gate-assisted turn-off 45 pilot 41 reverse-conducting 42 scr 36 shorted cathode 40 triac 47, 160 thyristor inverter 288 thyristor-diode regulators 255 thyristors avalanche of 39 characteristics of 36, 79 di/dt in 41,169 dv/dt in 39,165 firing of 159 parallel operation of 194 ratings of 79 series operation of 187 time arcing 198 fuse clearing 198 melting 198 transfer ratio 26, 68 transformer ampere-turns balance 294 pulse 127 zig-zag 235 transformer magnetising inductance 235 transient, thermal impedance 95 transient suppression 204 transistor bipolar 23,59, 105, 124 Darlington 15 1 planar epitaxial 24 triple-diffused 23 unipolar 23, 30, 70 transistor in common emitter mode 25 trapped energy 272,279 triac 47 trickle charge 266 triggering of thyristors 159 turn-off gain 46 turn-offloss 114, 116, 121, 140 turn-off time 55,69,83, 139 turn-on loss 114,115,121,140 turn-on time 68,81,139 uncontrolled converters 215

8 variable dc link 301 varistor 204 virtual junction 55 v-layer 18 voltage breakdown 29, S9 voltage threshold 32 volt-second 322,327 Index Zener breakdown 12,19 Zenerdiode 19,117,204 Zener effect 12 zero voltage switching 210 zig-zag connection 23 S 337

Fundamentals of Power Semiconductor Devices

В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device