2 Marks - Question Bank. Unit 1- INTRODUCTION
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1 Two marks 1. What is power electronics? EE6503 POWER ELECTRONICS 2 Marks - Question Bank Unit 1- INTRODUCTION Power electronics is a subject that concerns the applications electronics principles into situations that are rated at power level rather than signal level. It may be defined as a subject deals with the apparatus and equipment working on the principle of electronics but at rated power level. 2. Give the applications of power electronics. Aerospace Commercial Industrial Telecommunications 3. Classify power semiconductor devices give examples. Diodes: power diodes Thyristors: SCR Control switches: BJT, MOSFET and IGBT 4. Define latching current of SCR. [Nov/Dec 2012] May/June 2014 The latching current is defined as the minimum value of anode current which it must attain during turn on process to maintain conduction when gate signal is removed. 5. What are the factors that influence the turn-off time of thyristor? [Nov/Dec 2010] 1. Recovery Process 2. Recombination Process 6. What are the parameters involved in switching loss of power device? [April/May 2011] Forward conduction loss Loss due to leakage current during forward and reverse blocking Switching losses at turn-on and turn-off. Gate triggering loss. 7. What are the advantages of MOSFET? Lower switching losses. No Secondary breakdown. Switching frequency high. It has positive temperature coefficient for resistance. 8. Define the term pinch off voltage of MOSFET. [May/June 2012] If the gate source voltage is made negative enough, the channel will be completely depleted, offering a high value of drain to source resistance and there will be no current flow from drain to source. The value of gate source voltage is called pinch off voltage. 9. In TRIAC which of the modes the sensitivity of gate is high. The more sensitive of the triac is greatest in the first quadrant when turned on with positive gate current and also in the third quadrant when turned on with negative gate current. 10. What are the types of power transistors? Bipolar Junction Transistor (BJT) Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
2 Insulated Gate Bipolar Transistor (IGBT) 11. Why are IGBT becoming popular in their application to controlled converters? May/June2012 Lower hate requirements Lower switching losses Smaller snubber circuit requirements 12. Power BJT is a current controlled device. Why? Because the output (collector) current can be controlled by base current. 13. What are the different types of power MOSFET? i)n-channel MOSFET ii)p-channel MOSFET 14. How can a thyristor turned off? A thyristor can be turned off by making the current flowing through it to a level below the holding current. 15. Define holding current. The holding current is defined as the minimum value of anode current below which it must fall to for turning off the thyristor. 16. What is the use of snubber circuit? [May/June 2013] It consists of a series combination of a resistor and a capacitor in parallel with the thyristors. It is mainly used for dv / dt protection. 17. What losses occur in a thyristor during working conditions? Forward conduction losses Loss due to leakage current during forward and reverse blocking. Switching losses at turn-on and turn-off. Gate triggering loss. 18. Define circuit turn off time of SCR. [Nov/Dec 2011] It is defined as the time during which a reverse voltage is applied across the thyristor during its commutation process. 19. Why circuit turn off time should be greater than the thyristor turn-off time? Circuit turn off time should be greater than the thyristor turn-off time for reliable turn-off, otherwise the device may turn-on at an undesired instant, a process called commutation failure. 20. What is meant by commutation? (Nov/Dec 2014) It is the process of changing the direction of current flow in a particular path of the circuit. This process is used in thyristors for turning it off. 21. What are the types of commutation? a. Natural commutation b. Forced commutation 22. What is the turn-off time for converter grade SCRs and inverter grade SCRs? Turn-off time for converter grade SCRs is ms turn-off time for converter grade SCRs and inverter grade SCRs and for inverter grade SCRs is 3 50 ms. 23. Define hard-driving or over-driving. When gate current is several times higher than the minimum gate current required, a thyristors is said to be hard-fired or over-driven. Hard-firing of a thyristor reduces its turn-on time and enhances its di/dt capability. 24. Write down the applications of IGBT? AC and DC motor drives UPS systems Power supplies Relays and Contactors 25. What are the advantages of GTO over SCR? a. Elimination of commutation of commutating components in forced commutation, resulting in reduction in cost, weight and volume.
3 b. Reduction in acoustic noise and electromagnetic noise due to elimination of commutation chokes. c. Faster turn-off, permitting high switching frequencies. d. Improved efficiency of the converters 26. What are the draw backs of GTO? [Nov/Dec 2012] 1. Magnitude of latching and holding currents is more. 2. On state voltage drop and the associated loss is more 3. Due to multi cathode structure of GTO, triggering gate current is higher than the required for a conventional thyristor. 27. What are the different methods to turn on the thyristor? [April/May 2011] Forward voltage triggering, Gate triggering, dv/dt triggering, temperature triggering & light triggering 28. Define forward break over voltage. When anode is positive w.r.to cathode with gate current open, the junction J1 & J3 are forward biased but J2 is reverse biased. When the forward voltage is increased junction J2 will have an avalanche breakdown at a voltage. This voltage is called forward break over voltage. 29. Define reverse break over voltage. When cathode is positive w.r.to anode with gate current open, the junction J1 & J3 are reverse biased but J2 is forward biased. When the reverse voltage is increased junctions J1 & J3 will have an avalanche breakdown at a voltage. This voltage is called as critical breakdown voltage Vbr. 30. IGBT is a voltage controlled device. Why? IGBT is a voltage controlled device because the controlling parameter is gate emitter voltage VGE 31. Power MOSFET is a voltage controlled device. Why? Power MOSFET is a voltage controlled device because the output current can controlled by gate source voltage VGS. 32. What is meant by over drive factor? It is defined as the ratio of IB & IBS ODF = IB / IBS 33. Draw the turn on characteristics of TRIAC and mark the td, tr and ton. [Nov/Dec 2010] [April/May 2015] 34. What is the limitation of high frequency operation of a power electronic device? May/June Higher Switching losses
4 35. Draw Switching Time characteristics of BJT? [April/May 2015] 36. Distinguish between SCR and TRIAC? (Nov/Dec 2014) SCR is unidirectional device, gate current is positive, one VI characteristics Triac is bidirectional device; gate current is positive or negative, two VI characteristics 37. Compare MOSFET and BJT? May/June 2014 MOSFET Voltage controlled device, unipolar device BJT current controlled device, bipolar device
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