Semiconductor Nanowires for photovoltaics and electronics
|
|
|
- Annabella Jackson
- 5 years ago
- Views:
Transcription
1 Semiconductor Nanowires for photovoltaics and electronics M.T. Borgström, NW Doping Total control over axial and radial NW growth NW pn-junctions
2
3
4 World record efficiency solar cell US energy information administration 2010 Solar Junction: III-V multi junction solar cell
5 AMON-RA (FP ) Lund University Fraunhofer Institute for Solar Energy Systems University of Kassel Sol Voltaics AB Johannes Kepler University Linz Technical University of Denmark
![Impurity doping in nanowires Particle assisted growth: Low temperature (400-500ºC) Complex growth dynamics [111] growth direction crystal structure Solubility](/docs-images/92/109459150/images/6-0.jpg "Segregation coefficient MOVPE 600-700ºC Characterisation: Chemically (EDX) Electrically (Field effect) Optically (PL) Atom probe Wallentin, Borgström JMR 2011")
6 Impurity doping in nanowires Particle assisted growth: Low temperature ( ºC) Complex growth dynamics [111] growth direction crystal structure Solubility Segregation coefficient MOVPE ºC Characterisation: Chemically (EDX) Electrically (Field effect) Optically (PL) Atom probe Wallentin, Borgström JMR 2011
![Drude model, nq Evaluate doping nw-fet Carrier concentration, n = doping concentration Mobility (µ) extracted from gate-sweeps Conductivity (σ) extracted from I-V SD-current [A] 2.5 2 1.](/docs-images/92/109459150/images/7-0.jpg "5 1 0.5 x 10-9 n-type 0-10 -5 0 5 10 Gate voltage [V] Usd=0.5V I V D Cox 2 g L V const D V L V RI I A D D D D SD-current [A] 1.5 1 0.5 0-0.5-1 -1.5 2 x 10-6 -2-0.1-0.05 0 0.05 0.1 SD-voltage [V]")
7 Drude model, nq Evaluate doping nw-fet Carrier concentration, n = doping concentration Mobility (µ) extracted from gate-sweeps Conductivity (σ) extracted from I-V SD-current [A] x 10-9 n-type Gate voltage [V] Usd=0.5V I V D Cox 2 g L V const D V L V RI I A D D D D SD-current [A] x SD-voltage [V]
8 TESn for n-doping (Sn:InP ionization energy 5.9 mev) Gate voltage dependent action - n-type transconductance + IV (ohmic contacts) qnv Q C V threshold voltage (non ohmic contacts) ox th Borgström et al, Nanotechnology, 2008
9 Dimethylzinc for p-doping (Zn:InP ionization energy 35 mev) X DMZn =1e-6, 20min X DMZn =1e-5, 20min X DMZn =5e-5, 20min Gate voltage dependent action - p-type DMZn enhances the nanowire growth rate and suppresses side wall growth Nucleation problems for high dopant precursor molar fraction Borgström et al, IEEE J Sel Top Quant 2011
10 Decoupled axial and radial growth Increasing in-situ HCl molar fraction 80 nm aerosol particles TMI, PH3, HCl Growth temperature 450 C Borgström et al, Nano Research, 2010
11 In-situ InP NW etching by HCl Radial growth can be fully impeded 11 Borgström et al, Nano Research, 2010
12 TEM characterisation Without HCl With HCl Structural defects in radial growth No defects from shell growth Rough sidewalls due to faceting Straight sidewalls Zinc blende:91% Zinc blende 32%, wurtzite 55% Borgström et al, Chem Pys Lett, 2011 Wallentin et al, J Cryst Growth (InAsP) 12 Jacobsson et al, submitted to Nanotech (GaInP)
13 NW solar cell fabrication InP:p InP:n ITO Dielectric 1x1 mm devices InP:p+ Borgström et al, IEEE J Sel Top Quant 2011
14 Photocurrent measurements Efficiency 3.8% (1 sun, AM 1.5) Fill factor 74% V oc = 0.75 V Excellent light capture despite low density (are fill factor 3%) 5 times more efficient per surface area than thin film InP cell Current density through NW about 3 times higher than in record multi junction solar cells. In collaboration with Sol Voltaics AB and Fraunhofer ISE
15 Concentrated light Efficiency and Voc drops with increasing concentration Reverse diode in series with pn junction? In collaboration with Sol Voltaics AB and Fraunhofer ISE
16 Tunnel diode in dual junction solar cell Depletion region Tunnel diode Depletion region p n n+ p+ p n e h
17 Tunnel diode principles Thermal equilibrium A p++ E FN E FP n++ Peak current C E FN p++ Reverse bias B E FN N++ E FN P++ E FP Negative differential resistance D P++ Abs current density (A/cm 2 ) B C D A Bias (V) n++ E FP N++ E FP InP tunneling junction L Esaki, Phys Rev 1958 Current density 0.11 A/cm 2 RT peak to valley current ratios of 5.3
18 InP tandem homojunction on Si Tunnel junction Junction 2 Tunnel junction p++ n++ Dopant induced change in crystal structure. Junction 1 V oc = 0.69/1.15 V 67% increase 500nm Heurlin et al, Nano Letters 2011
19 InP (n+) GaAs (p+) heterostructure InP readily n-doped, Borgström et al, Nanotech, 2008 GaAs readily p-doped, Gutsche et al, J Appl Phys, 2009 Favourable type II band alignment Lattice mismatch 3.8% 80 nm Au particles Growth temperature 420 C H2S n-doping DEZn p-doping
20 Single InP-GaAs NW tunnel diode Peak to Valley Current Ratio (PVCR) up to 8.2 at room temperature Peak current density up to 890 A/cm 2, typical 15 A/cm % solar cell (FISE): A/cm 2 (@1000 suns) Wallentin et al., Nano Letters 2010
21 Summary NWs promising for high efficiency solar energy harvesting NW Doping Decoupled Axial and radial NW growth by in situ etching Nanowire pn-junctions, esaki diodes Nano imprint lithography for large area patterning GaInP for high band gap junction
22 Nano imprint lithography for large scale economically viable patterning
23 Nano imprint lithography for large scale economically viable patterning Count Diameter (nm)
24 Acknowledgements J. Wallentin, M. Heurlin, D. Jacobsson, K. Deppert, L. Samuelson Solid state physics, Lund University P. Wickert, S. Fält, M. Magnusson Solvoltaics AB, Lund M. Ek, L. R. Wallenberg Polymer & Materials Chemistry/nCHREM, Lund University J. Persson, J. Wagner Center for Electron Nanoscopy, Technical University of Denmark D. Kriegner, T. Etzelstorfer, J. Stangl, G. Bauer Johannes Kepler University Linz P. Kailuweit, G. Siefer, F. Dimroth Fraunhofer institute for solar energy systems, Freiburg EU project AMON-RA (FP ) E.ON International Research Initiative. Swedish energy agency Swedish Research Council Swedish Foundation for Strategic Research
Radial Tunnel Diodes based on InP/InGaAs Core-Shell Nanowires
Radial Tunnel Diodes based on InP/InGaAs Core-Shell Nanowires Ofogh Tizno 1,a), Bahram Ganjipour 2,b), Magnus Heurlin 3, Claes Thelander 3, Magnus T. Borgström 3 and Lars Samuelson 3,c) 1 Physics Department,
Diploma thesis : Characterization of doped GaInP nanowires for photovoltaics
Diploma thesis : Characterization of doped GaInP nanowires for photovoltaics Laura Barrutia Poncela Division of Solid State Physics, Lund University Supervisor: Jesper Wallentin and Magnus T. Borgström
Chapter 1. Introduction
Chapter 1 Introduction 1.1 Introduction of Device Technology Digital wireless communication system has become more and more popular in recent years due to its capability for both voice and data communication.
GaAs polytype quantum dots
GaAs polytype quantum dots Vilgailė Dagytė, Andreas Jönsson and Andrea Troian December 17, 2014 1 Introduction An issue that has haunted nanowire growth since it s infancy is the difficulty of growing
Modelling and Analysis of Four-Junction Tendem Solar Cell in Different Environmental Conditions Mr. Biraju J. Trivedi 1 Prof. Surendra Kumar Sriwas 2
IJSRD - International Journal for Scientific Research & Development Vol. 3, Issue 08, 2015 ISSN (online): 2321-0613 Modelling and Analysis of Four-Junction Tendem Solar Cell in Different Environmental
What is the highest efficiency Solar Cell?
What is the highest efficiency Solar Cell? GT CRC Roof-Mounted PV System Largest single PV structure at the time of it s construction for the 1996 Olympic games Produced more than 1 billion watt hrs. of
Optical Fiber Communication Lecture 11 Detectors
Optical Fiber Communication Lecture 11 Detectors Warriors of the Net Detector Technologies MSM (Metal Semiconductor Metal) PIN Layer Structure Semiinsulating GaAs Contact InGaAsP p 5x10 18 Absorption InGaAs
Supplementary information for: Surface passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon
Supplementary information for: Surface passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon Jeppe V. Holm 1, Henrik I. Jørgensen 1, Peter Krogstrup 2, Jesper Nygård 2,4,
Nanowires for Quantum Optics
Nanowires for Quantum Optics N. Akopian 1, E. Bakkers 1, J.C. Harmand 2, R. Heeres 1, M. v Kouwen 1, G. Patriarche 2, M. E. Reimer 1, M. v Weert 1, L. Kouwenhoven 1, V. Zwiller 1 1 Quantum Transport, Kavli
4.1.2 InAs nanowire circuits fabricated by field-assisted selfassembly on a host substrate
22 Annual Report 2010 - Solid-State Electronics Department 4.1.2 InAs nanowire circuits fabricated by field-assisted selfassembly on a host substrate Student Scientist in collaboration with R. Richter
SUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION doi:10.1038/nature11293 1. Formation of (111)B polar surface on Si(111) for selective-area growth of InGaAs nanowires on Si. Conventional III-V nanowires (NWs) tend to grow in
ANISOTYPE GaAs BASED HETEROJUNCTIONS FOR III-V MULTIJUNCTION SOLAR CELLS
ANISOTYPE Ga BASED HETEROJUNCTIONS FOR III-V MULTIJUNCTION SOLAR CELLS A.S. Gudovskikh 1,*, K.S. Zelentsov 1, N.A. Kalyuzhnyy 2, V.M. Lantratov 2, S.A. Mintairov 2 1 Saint-Petersburg Academic University
The effect of the diameters of the nanowires on the reflection spectrum
The effect of the diameters of the nanowires on the reflection spectrum Bekmurat Dalelkhan Lund University Course: FFF042 Physics of low-dimensional structures and quantum devices 1. Introduction Vertical
CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34
CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials
Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
Supplementary information for Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment Rusen Yan 1,2*, Sara Fathipour 2, Yimo Han 4, Bo Song 1,2, Shudong Xiao 1, Mingda Li 1,
Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne, 1015
Gallium arsenide p-i-n radial structures for photovoltaic applications C. Colombo 1 *, M. Heiβ 1 *, M. Grätzel 2, A. Fontcuberta i Morral 1 1 Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique
SILICON NANOWIRE HYBRID PHOTOVOLTAICS
SILICON NANOWIRE HYBRID PHOTOVOLTAICS Erik C. Garnett, Craig Peters, Mark Brongersma, Yi Cui and Mike McGehee Stanford Univeristy, Department of Materials Science, Stanford, CA, USA ABSTRACT Silicon nanowire
Semiconductor Physics and Devices
Metal-Semiconductor and Semiconductor Heterojunctions The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is one of two major types of transistors. The MOSFET is used in digital circuit, because
Thin film PV Technologies III- V PV Technology
Thin film PV Technologies III- V PV Technology Week 5.1 Arno Smets ` (Source: NASA) III V PV Technology Semiconductor Materials III- V semiconductors: GaAs: GaP: InP: InAs: GaInAs: GaInP: AlGaInAs: AlGaInP:
Lecture 18: Photodetectors
Lecture 18: Photodetectors Contents 1 Introduction 1 2 Photodetector principle 2 3 Photoconductor 4 4 Photodiodes 6 4.1 Heterojunction photodiode.................... 8 4.2 Metal-semiconductor photodiode................
Resonant Tunneling Device. Kalpesh Raval
Resonant Tunneling Device Kalpesh Raval Outline Diode basics History of Tunnel diode RTD Characteristics & Operation Tunneling Requirements Various Heterostructures Fabrication Technique Challenges Application
Semiconductor Nanowires for Thermoelectrics Daniel Vakulov, R. Chavez, S. Gazibegović, R.W. van der Heijden, and E.P.A.M. Bakkers
Semiconductor Nanowires for Thermoelectrics Daniel Vakulov, R. Chavez, S. Gazibegović, R.W. van der Heijden, and E.P.A.M. Bakkers Advanced Nanomaterials and Devices / Applied Physics department Outline
Reconfigurable Si-Nanowire Devices
Reconfigurable Si-Nanowire Devices André Heinzig, Walter M. Weber, Dominik Martin, Jens Trommer, Markus König and Thomas Mikolajick andre.heinzig@namlab.com log I d Present CMOS technology ~ 88 % of IC
Solid State Device Fundamentals
Solid State Device Fundamentals 4.4. Field Effect Transistor (MOSFET) ENS 463 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 4N101b 1 Field-effect transistor (FET)
Department of Electrical Engineering IIT Madras
Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or
Modelling of electronic and transport properties in semiconductor nanowires
Modelling of electronic and transport properties in semiconductor nanowires Martin P. Persson,1 Y. M. Niquet,1 S. Roche,1 A. Lherbier,1,2 D. Camacho,1 F. Triozon,3 M. Diarra,4 C. Delerue4 and G. Allan4
LEDs, Photodetectors and Solar Cells
LEDs, Photodetectors and Solar Cells Chapter 7 (Parker) ELEC 424 John Peeples Why the Interest in Photons? Answer: Momentum and Radiation High electrical current density destroys minute polysilicon and
Lund University Faculty of Science. STM-based characterization of single GaInP photovoltaic nanowires
Lund University Faculty of Science STM-based characterization of single GaInP photovoltaic nanowires Author: Johannes Brask Supervisor: Rainer Timm Co-supervisor: Magnus Borgström Bachelor thesis Div.
Crystal phase transformation in self-assembled. - Supporting Information -
Crystal phase transformation in self-assembled InAs nanowire junctions on patterned Si substrates - Supporting Information - Torsten Rieger 1,2, Daniel Rosenbach 1,2, Daniil Vakulov 1,2, Sebastian Heedt
Fin-Shaped Field Effect Transistor (FinFET) Min Ku Kim 03/07/2018
Fin-Shaped Field Effect Transistor (FinFET) Min Ku Kim 03/07/2018 ECE 658 Sp 2018 Semiconductor Materials and Device Characterizations OUTLINE Background FinFET Future Roadmap Keeping up w/ Moore s Law
SUPPLEMENTARY INFORMATION
DOI: 1.138/NPHOTON.212.11 Supplementary information Avalanche amplification of a single exciton in a semiconductor nanowire Gabriele Bulgarini, 1, Michael E. Reimer, 1, Moïra Hocevar, 1 Erik P.A.M. Bakkers,
Photodiode: LECTURE-5
LECTURE-5 Photodiode: Photodiode consists of an intrinsic semiconductor sandwiched between two heavily doped p-type and n-type semiconductors as shown in Fig. 3.2.2. Sufficient reverse voltage is applied
Vertical Nanowall Array Covered Silicon Solar Cells
International Conference on Solid-State and Integrated Circuit (ICSIC ) IPCSIT vol. () () IACSIT Press, Singapore Vertical Nanowall Array Covered Silicon Solar Cells J. Wang, N. Singh, G. Q. Lo, and D.
Dimensional Analysis of GaAs Based Double Barrier Resonant Tunnelling Diode
Dimensional Analysis of GaAs Based Double Barrier Resonant Tunnelling Diode Vivek Sharma 1, Raminder Preet Pal Singh 2 M. Tech Student, Department of Electrical & Elctronics Engineering, Arni University,
Integration of III-V heterostructure tunnel FETs on Si using Template Assisted Selective Epitaxy (TASE)
Integration of III-V heterostructure tunnel FETs on Si using Template Assisted Selective Epitaxy (TASE) K. Moselund 1, D. Cutaia 1. M. Borg 1, H. Schmid 1, S. Sant 2, A. Schenk 2 and H. Riel 1 1 IBM Research
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mv/decade and Ion = 10 A/m for Ioff = 1 na/m at VDS = 0.
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mv/decade and Ion = 10 A/m for Ioff = 1 na/m at VDS = 0.3 V Memisevic, E.; Svensson, Johannes; Hellenbrand, Markus; Lind, Erik;
PHYSICAL ELECTRONICS(ECE3540) APPLICATIONS OF PHYSICAL ELECTRONICS PART I
PHYSICAL ELECTRONICS(ECE3540) APPLICATIONS OF PHYSICAL ELECTRONICS PART I Tennessee Technological University Monday, October 28, 2013 1 Introduction In the following slides, we will discuss the summary
Implementation for SMS4-GCM and High-Speed Architecture Design
Implementation for SMS4-GCM and High-Speed Architecture Design K.Subbulakshmi Department of ECE, Bharath University, Chennai,India ABSTRACT: A new and high-efficiency encryption and authentication algorithm,
PHYSICS OF SEMICONDUCTOR DEVICES
PHYSICS OF SEMICONDUCTOR DEVICES PHYSICS OF SEMICONDUCTOR DEVICES by J. P. Colinge Department of Electrical and Computer Engineering University of California, Davis C. A. Colinge Department of Electrical
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and
value of W max for the device. The at band voltage is -0.9 V. Problem 5: An Al-gate n-channel MOS capacitor has a doping of N a = cm ;3. The oxi
Prof. Jasprit Singh Fall 2001 EECS 320 Homework 10 This homework is due on December 6 Problem 1: An n-type In 0:53 Ga 0:47 As epitaxial layer doped at 10 16 cm ;3 is to be used as a channel in a FET. A
Design, synthesis and characterization of novel nanowire structures. for photovoltaics and intracellular probes
Design, synthesis and characterization of novel nanowire structures for photovoltaics and intracellular probes Bozhi TIAN Department of Chemistry and Chemical Biology, Semiconductor nanowires (NW) represent
Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs
Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Monika Siddharth Rajan ECE, The Ohio State University Andrew Allerman, Michael
Atomic-layer deposition of ultrathin gate dielectrics and Si new functional devices
Atomic-layer deposition of ultrathin gate dielectrics and Si new functional devices Anri Nakajima Research Center for Nanodevices and Systems, Hiroshima University 1-4-2 Kagamiyama, Higashi-Hiroshima,
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si Berg, Martin; Persson, Karl-Magnus; Kilpi, Olli-Pekka; Svensson, Johannes; Lind, Erik; Wernersson, Lars-Erik Published in: Technical
Quantum Condensed Matter Physics Lecture 16
Quantum Condensed Matter Physics Lecture 16 David Ritchie QCMP Lent/Easter 2018 http://www.sp.phy.cam.ac.uk/drp2/home 16.1 Quantum Condensed Matter Physics 1. Classical and Semi-classical models for electrons
Ever since Esaki demonstrated the first semiconductor p n
pubs.acs.org/nanolett Silicon Nanowire Esaki Diodes Heinz Schmid,*, Cedric Bessire,*, Mikael T. Bjo rk, Andreas Schenk, and Heike Riel IBM Research Zurich, Saümerstrasse 4, 8803 Ru schlikon, Switzerland
MSE 410/ECE 340: Electrical Properties of Materials Fall 2016 Micron School of Materials Science and Engineering Boise State University
MSE 410/ECE 340: Electrical Properties of Materials Fall 2016 Micron School of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures
Supplemental information for Selective GaSb Radial Growth on Crystal Phase Engineered InAs Nanowires
Electronic Supplementary Material (ESI) for Nanoscale. This journal is The Royal Society of Chemistry 2015 Supplemental information for Selective GaSb Radial Growth on Crystal Phase Engineered InAs Nanowires
EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02
EE 5611 Introduction to Microelectronic Technologies Fall 2014 Thursday, September 04, 2014 Lecture 02 1 Lecture Outline Review on semiconductor materials Review on microelectronic devices Example of microelectronic
Electronic Devices 1. Current flowing in each of the following circuits A and respectively are: (Circuit 1) (Circuit 2) 1) 1A, 2A 2) 2A, 1A 3) 4A, 2A 4) 2A, 4A 2. Among the following one statement is not
CHAPTER 8 The PN Junction Diode
CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction
Title. Author(s) Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Citation Journal of crystal growth, 411: Issue Date
Title Growth of wurtzite GaP in InP/GaP core-shell n uthor(s) Ishizaka, Fumiya; Hiraya, Yoshihiro; Tomioka, Citation Journal of crystal growth, 411: 71-75 Issue Date 2015-02-01 Doc URLhttp://hdl.handle.net/2115/57932
Chap14. Photodiode Detectors
Chap14. Photodiode Detectors Mohammad Ali Mansouri-Birjandi mansouri@ece.usb.ac.ir mamansouri@yahoo.com Faculty of Electrical and Computer Engineering University of Sistan and Baluchestan (USB) Design
ECE 340 Lecture 29 : LEDs and Lasers Class Outline:
ECE 340 Lecture 29 : LEDs and Lasers Class Outline: Light Emitting Diodes Lasers Semiconductor Lasers Things you should know when you leave Key Questions What is an LED and how does it work? How does a
Semiconductor Devices
Semiconductor Devices Modelling and Technology Source Electrons Gate Holes Drain Insulator Nandita DasGupta Amitava DasGupta SEMICONDUCTOR DEVICES Modelling and Technology NANDITA DASGUPTA Professor Department
10/27/2009 Reading: Chapter 10 of Hambley Basic Device Physics Handout (optional)
EE40 Lec 17 PN Junctions Prof. Nathan Cheung 10/27/2009 Reading: Chapter 10 of Hambley Basic Device Physics Handout (optional) Slide 1 PN Junctions Semiconductor Physics of pn junctions (for reference
n-type Doping of Vapor Liquid Solid Grown GaAs Nanowires
Gutsche et al. Nanoscale Res Lett 211, 6:65 NANO EXPRESS Open Access n-type Doping of Vapor Liquid Solid Grown GaAs Nanowires Christoph Gutsche *, Andrey Lysov, Ingo Regolin, Kai Blekker, Werner Prost,
Key Questions. What is an LED and how does it work? How does a laser work? How does a semiconductor laser work? ECE 340 Lecture 29 : LEDs and Lasers
Things you should know when you leave Key Questions ECE 340 Lecture 29 : LEDs and Class Outline: What is an LED and how does it How does a laser How does a semiconductor laser How do light emitting diodes
Physics of Semiconductor Devices
Physics of Semiconductor Devices S. M. SZE Member of the Technical Staff Bell Telephone Laboratories, Incorporated Murray Hill, New Jersey WILEY-INTERSCIENCE A Division of John Wiley & Sons New York London
improving further the mobility, and therefore the channel conductivity. The positive pattern definition proposed by Hirayama [6] was much improved in
![improving further the mobility, and therefore the channel conductivity. The positive pattern definition proposed by Hirayama [6] was much improved in](/thumbs/91/107553446.jpg "improving further the mobility, and therefore the channel conductivity. The positive pattern definition proposed by Hirayama [6] was much improved in")
The two-dimensional systems embedded in modulation-doped heterostructures are a very interesting and actual research field. The FIB implantation technique can be successfully used to fabricate using these
Electronics The basics of semiconductor physics
Electronics The basics of semiconductor physics Prof. Márta Rencz, Gábor Takács BME DED 17/09/2015 1 / 37 The basic properties of semiconductors Range of conductivity [Source: http://www.britannica.com]
Fundamentals of CMOS Image Sensors
CHAPTER 2 Fundamentals of CMOS Image Sensors Mixed-Signal IC Design for Image Sensor 2-1 Outline Photoelectric Effect Photodetectors CMOS Image Sensor(CIS) Array Architecture CIS Peripherals Design Considerations
CSCI 2570 Introduction to Nanocomputing
CSCI 2570 Introduction to Nanocomputing Introduction to NW Decoders John E Savage Lecture Outline Growing nanowires (NWs) Crossbar-based computing Types of NW decoders Resistive model of decoders Addressing
Tunnel FET architectures and device concepts for steep slope switches Joachim Knoch
Tunnel FET architectures and device concepts for steep slope switches Joachim Knoch Institute of Semiconductor Electronics RWTH Aachen University Sommerfeldstraße 24 52074 Aachen Outline MOSFETs Operational
Semiconductor Devices Lecture 5, pn-junction Diode
Semiconductor Devices Lecture 5, pn-junction Diode Content Contact potential Space charge region, Electric Field, depletion depth Current-Voltage characteristic Depletion layer capacitance Diffusion capacitance
Three Terminal Devices
Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering
InAs InP Core Shell Nanowires
InAs InP Core Shell Nanowires Epitaxial Growth and Characterization Magnus Heurlin Supervisors: Philippe Caroff and Claes Thelander Master of Science Thesis September 2008 Department of Solid State Physics
1 Semiconductor-Photon Interaction
1 SEMICONDUCTOR-PHOTON INTERACTION 1 1 Semiconductor-Photon Interaction Absorption: photo-detectors, solar cells, radiation sensors. Radiative transitions: light emitting diodes, displays. Stimulated emission:
Power MOSFET Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Power MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Evolution of low-voltage (
III-V Vertical Nanowire FETs with Steep Subthreshold Towards Sub-10 nm Diameter Devices
III-V Vertical Nanowire FETs with Steep Subthreshold Towards Sub-10 nm Diameter Devices Jesús A. del Alamo, Xin Zhao, Wenjie Lu, Alon Vardi Microsystems Technology Laboratories, MIT E 3 S Retreat September
ECE 340 Lecture 37 : Metal- Insulator-Semiconductor FET Class Outline:
ECE 340 Lecture 37 : Metal- Insulator-Semiconductor FET Class Outline: Metal-Semiconductor Junctions MOSFET Basic Operation MOS Capacitor Things you should know when you leave Key Questions What is the
Fall 2004 Dawn Hettelsater, Yan Zhang and Ali Shakouri, 05/09/2002
University of California at Santa Cruz Jack Baskin School of Engineering Electrical Engineering Department EE-145L: Properties of Materials Laboratory Lab 6: Solar Cells Fall 2004 Dawn Hettelsater, Yan
OPTOELECTRONIC and PHOTOVOLTAIC DEVICES
OPTOELECTRONIC and PHOTOVOLTAIC DEVICES Outline 1. Introduction to the (semiconductor) physics: energy bands, charge carriers, semiconductors, p-n junction, materials, etc. 2. Light emitting diodes Light
Investigation of Photovoltaic Properties of In:ZnO/SiO 2 /p- Si Thin Film Devices
Universities Research Journal 2011, Vol. 4, No. 4 Investigation of Photovoltaic Properties of In:ZnO/SiO 2 /p- Si Thin Film Devices Kay Thi Soe 1, Moht Moht Than 2 and Win Win Thar 3 Abstract This study
Widely used semiconductors like germanium (Ge) and. Direct Band Gap Wurtzite Gallium Phosphide Nanowires
pubs.acs.org/nanolett Terms of Use Downloaded via 148.251.232.83 on September 12, 2018 at 00:31:35 (UTC). See https://pubs.acs.org/sharingguidelines for options on how to legitimately share published articles.
Optical Spectroscopy of Single Nanowires. Trägårdh, Johanna. Link to publication
Optical Spectroscopy of Single Nanowires Trägårdh, Johanna 2008 Link to publication Citation for published version (APA): Trägårdh, J. (2008). Optical Spectroscopy of Single Nanowires General rights Copyright
PHYS 3050 Electronics I
PHYS 3050 Electronics I Chapter 4. Semiconductor Diodes and Transistors Earth, Moon, Mars, and Beyond Dr. Jinjun Shan, Associate Professor of Space Engineering Department of Earth and Space Science and
Downloaded from
Question 14.1: In an n-type silicon, which of the following statement is true: (a) Electrons are majority carriers and trivalent atoms are the dopants. (b) Electrons are minority carriers and pentavalent
Semiconductor Materials for Power Electronics (SEMPEL) GaN power electronics materials
Semiconductor Materials for Power Electronics (SEMPEL) GaN power electronics materials Kjeld Pedersen Department of Physics and Nanotechnology, AAU SEMPEL Semiconductor Materials for Power Electronics
CHAPTER 8 The PN Junction Diode
CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction
Nanowires for Next Generation. Chennupati Jagadish Australian National University
Compound Semiconductor Nanowires for Next Generation Optoelectronics Chennupati Jagadish Australian National University c.jagadish@ieee.org The Australian National University Research School of Physical
Contents. Nano-2. Nano-2. Nanoscience II: Nanowires. 2. Growth of nanowires. 1. Nanowire concepts Nano-2. Nano-2
Contents Nanoscience II: Nanowires Kai Nordlund 17.11.2010 Faculty of Science Department of Physics Division of Materials Physics 1. Introduction: nanowire concepts 2. Growth of nanowires 1. Spontaneous
SUPPLEMENTARY INFORMATION
In the format provided by the authors and unedited. Photon-triggered nanowire transistors Jungkil Kim, Hoo-Cheol Lee, Kyoung-Ho Kim, Min-Soo Hwang, Jin-Sung Park, Jung Min Lee, Jae-Pil So, Jae-Hyuck Choi,
Nanobeam X-ray fluorescence dopant mapping reveals dynamics of in situ Zn-doping in nanowires
Supporting information for: Nanobeam X-ray fluorescence dopant mapping reveals dynamics of in situ Zn-doping in nanowires Andrea Troian 1, Gaute Otnes 2,3, Xulu Zeng 2, Lert Chayanun 1, Vilgailė Dagytė
Intrinsic Semiconductor
Semiconductors Crystalline solid materials whose resistivities are values between those of conductors and insulators. Good electrical characteristics and feasible fabrication technology are some reasons
Simulation of multi-junction compound solar cells. Copyright 2009 Crosslight Software Inc.
Simulation of multi-junction compound solar cells Copyright 2009 Crosslight Software Inc. www.crosslight.com 1 Introduction 2 Multi-junction (MJ) solar cells space (e.g. NASA Deep Space 1) & terrestrial
Problem 4 Consider a GaAs p-n + junction LED with the following parameters at 300 K: Electron diusion coecient, D n = 25 cm 2 =s Hole diusion coecient
Prof. Jasprit Singh Fall 2001 EECS 320 Homework 7 This homework is due on November 8. Problem 1 An optical power density of 1W/cm 2 is incident on a GaAs sample. The photon energy is 2.0 ev and there is
Title. Author(s)Uemura, T.; Baba, T. CitationIEEE Transactions on Electron Devices, 49(8): Issue Date Doc URL. Rights.
Title A three-valued D-flip-flop and shift register using Author(s)Uemura, T.; Baba, T. CitationIEEE Transactions on Electron Devices, 49(8): 1336-1 Issue Date 2002-08 Doc URL http://hdl.handle.net/2115/5577
NOVEL CHIP GEOMETRIES FOR THz SCHOTTKY DIODES
Page 404 NOVEL CHIP GEOMETRIES FOR THz SCHOTTKY DIODES W. M. Kelly, Farran Technology Ltd., Cork, Ireland S. Mackenzie and P. Maaskant, National Microelectronics Research Centre, University College, Cork,
General look back at MESFET processing. General principles of heterostructure use in FETs
SMA5111 - Compound Semiconductors Lecture 11 - Heterojunction FETs - General HJFETs, HFETs Last items from Lec. 10 Depletion mode vs enhancement mode logic Complementary FET logic (none exists, or is likely
arxiv:physics/ v2 [physics.optics] 17 Mar 2005
![arxiv:physics/ v2 [physics.optics] 17 Mar 2005](/thumbs/73/69354164.jpg "arxiv:physics/ v2 [physics.optics] 17 Mar 2005")
Optical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a In- GaAs/AlAs resonant tunneling diode J. M. L. Figueiredo a), A. R. Boyd, C. R. Stanley, and C. N. Ironside Department
Session 3: Solid State Devices. Silicon on Insulator
Session 3: Solid State Devices Silicon on Insulator 1 Outline A B C D E F G H I J 2 Outline Ref: Taurand Ning 3 SOI Technology SOl materials: SIMOX, BESOl, and Smart Cut SIMOX : Synthesis by IMplanted
Semiconductor nanowires (NWs) synthesized by the
Direct Growth of Nanowire Logic Gates and Photovoltaic Devices Dong Rip Kim, Chi Hwan Lee, and Xiaolin Zheng* Department of Mechanical Engineering, Stanford University, California 94305 pubs.acs.org/nanolett
Mini-project report. Nanowire Photovoltaics Correlating the Optical and Structural Properties of GaAs Nanowires Containing InGaAs Quantum Dots
Mini-project report Nanowire Photovoltaics Correlating the Optical and Structural Properties of GaAs Nanowires Containing InGaAs Quantum Dots Alex Barrows a.barrows@sheffield.ac.uk 18/05/2012 1 Abstract
SUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION Dopant profiling and surface analysis of silicon nanowires using capacitance-voltage measurements Erik C. Garnett 1, Yu-Chih Tseng 4, Devesh Khanal 2,3, Junqiao Wu 2,3, Jeffrey
INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS
INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS Koray Aydin, Marina S. Leite and Harry A. Atwater Thomas J. Watson Laboratories of Applied Physics, California
10/14/2009. Semiconductor basics pn junction Solar cell operation Design of silicon solar cell
PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi
InGaAs MOSFETs for CMOS:
InGaAs MOSFETs for CMOS: Recent Advances in Process Technology J. A. del Alamo, D. Antoniadis, A. Guo, D.-H. Kim 1, T.-W. Kim 2, J. Lin, W. Lu, A. Vardi and X. Zhao Microsystems Technology Laboratories,
photolithographic techniques (1). Molybdenum electrodes (50 nm thick) are deposited by
Supporting online material Materials and Methods Single-walled carbon nanotube (SWNT) devices are fabricated using standard photolithographic techniques (1). Molybdenum electrodes (50 nm thick) are deposited