Semiconductor Materials for Power Electronics (SEMPEL) GaN power electronics materials

Size: px
Start display at page:

Download "Semiconductor Materials for Power Electronics (SEMPEL) GaN power electronics materials"

Transcription

1 Semiconductor Materials for Power Electronics (SEMPEL) GaN power electronics materials Kjeld Pedersen Department of Physics and Nanotechnology, AAU SEMPEL Semiconductor Materials for Power Electronics AALBORG UNIVERSITY Physics and Nanotechnology 1

2 Two main applications of GaN Power Electronics and LEDs Power electronics Key enabling technology Today 40% of global energy consumption is electrical 70% expected in 2040: Energy Roadmap 2050, European Commission: GaN technology can reduce losses significantly IGBT-module LED technology 19% of electricity for lighting (14% in EU) > 200 TWh in EU, > 70 Mt CO₂ Light Emitting (GaN) Diodes will reduce losses significantly Huge potential for energy savings Several % just by change of semiconductor!

3 GaN and SiC potentials Wide bandgap: 3.4 ev for GaN vs 1.1 for Si High switching frequencies, 100 MHz at kw powers Efficiency enhancements of 2-10 % ( e.g. from 96 to 99 %) Smaller footprint and weight down to 10% 3

4 2D-electron gas polarization effects Spontaneous P SP Piezoelectric P PE Engineering of electronic properties: Polarizations instead of doping! Journal of Applied Physics 85, 3222 (1999) Polarization charge: ρ P = P σ = P SP top + P PE (top) P SP bottom + P PE (bottom) 2D electron gas at interface Journal of Applied Physics 87, 334 (2000) 4

5 WBG power devices Vertical SiC MOSFET GaN HEMT GaN vs SiC Devices SiC avalable as 8 wafers GaN films on substrate High electron mobility GaN 2DEG Heterojunction GaN/AlₓGa₁ ₓN No doping! Polarization charges Low ON-resistance of HEMT HEMT one-sided structure more space required + higher mobility HEMT Normally ON (Depletion Mode) negative gate voltage to close More complicated structure for normally OFF (Enhancement Mode) Higher thermal conductivity of SiC SiC technology more mature

6 The main challenges Substrate- epitaxial growth GaN on Si Packaging high power density New type of component HEMT vs IGBT New challenges and opportunities Depletion (normally-on) vs Enhancement (normally-off) mode Reliability long-term stability Ohmic contacts self-heating in drain area Gate dielectrics oxide layers Buffer stack- defects (dislocations) S 2DEG Size of connects vs GaN chip! G Dielectric AlGaN GaN Buffer Substrate D

7 Epitaxial GaN growth Substrates: SiC - expensive Al₂O₃ -poor thermal conductivity Silicon: Cheap high-quality wafers Lattice mismatch 16% to GaN Alloys with Ga buffer layer needed Mismatch in thermal expansion (54%) Wafer bow with high temp (1100⁰C) growth High density of dislocations

8 Silicon vs Sapphire substrates GaN-on-Silicon versus GaN-on-Sapphire: Powdec s 1200V devices are GaN-on-Sapphire devices. Not using the Silicon and using Sapphire implies intrinsic differences in the device structure and operation. GaN-on-Si power devices: Thickness of nitride layers for 600V devices is 5μm or more. Field Plates are indivisibly needed for the conductive Si substrate to mitigate the current collapses. Growth on Si substrate needs chamber-cleaning prior to the deposition to avoid the unwanted chemical reactions between GaN and Si interface Advantages of GaN-on-Sapphire for Power devices: Common platform for GaN-LED production. The growth runs successively without chamber-cleaning. Throughput for GaN PSJ-FET/sapphire growth is roughly 10 times larger than that of the GaN FP-HEMT/Si growth. ITME The thermal conductivity of sapphire, 40 [W/m K], is lower than that of Si, 150 [W/m K].

9 Limitations for high voltage applications V B = ε sε 0 E2 cr 2qN D E cr : Break-down field E cr [V /μm] N D [cm 3 ] ε s V B [V] Buffer break-down a) Silicon-on-insulator wafers b) Remove Si below transistor c) Semi-insulating GaN Si SiC ~ GaN ~ Limits HV devices on Si substrates!

10 Efficiency Static losses resistance of drift region Higher voltage longer drift region higher loss Dynamic losses o Main advantage of HEMT: inherently low C out o + on drain 2DEG depleted no contact to gate No capacitance to gate Only static losses! o SiC: C out = 500 pf (doped layers), charged to 1000 V, switching at 100 khz. P dyn = fc out V c 2 = o 50 W 5% on a 1-kW power supply!

11 The normally-on problem 1. Cascode configuration Connection with low-voltage Si MOSFET High blocking of HEMT low R ON of Si FET 2. True Enhancement mode Introduction of ions that capture positive charges at interface

12 Growth facilities MOCVD in Aalborg running since autumn 2015 modified Veco- Showerhead 2 wafers, doping with Si PE-MBE in Aarhus- modified to GaN wafers, both n- and p-doping MOCVD at AAU MBE at AU

13 SiC on Si an alternative substrate Kukushkin, Semiconductors and Dielectrics 50, 1188 Si(100) Si(111) Advantages: SiC protects against Ga-Si reactions Better lattice match Strain relaxation due to voids Disadvantage: High growth temperature ~1300⁰C Low-temperature process ( ⁰C) developed at AU

14 GaN growth on SiC 4H-SiC on Si(111) as determined from lattice constant AlN buffer layer (100 nm) lattice matching GaN layer (750 nm) Strong correlation between roughness of SiC and pit hoels in GN film Mariia Rozhavskaya et al. Semiconductor Science and Technology (Submitted)

15 Contacts to GaN semiconductors Ohmic Au Ni Al Annealing A few min 800 C Au/Ni/Al Ni Al Ti Ti Ta TaN/TiN AlGaN AlGaN GaN GaN Annealing leads to diffusion and formation of new elements Formation of TaN/TiN consumes N from the AlGaN layer Forms N vacancies n-type doping Thins down the AlGaN layer easier tunneling to 2D electron gass TiN and TaN conducting elements Schottky: Ni/Au layers

16 Layout for diodes and contacts Circular and linear structures tested Ohmic contact and diode structures n-gan/sic,~10 16 cm µm thick Ohmic contacts:ti/al/ti/au 30,60,30, 90nm, annealed at C for 5 minutes in N 2 resistivity 10-5 Ω-cm 2 Schotkey contact: Ni/Au (25/50 nm)

17 I-V curves for Schottkey diodes High quality I-V curves Ideality factor1.1 I = I 0 exp qv nkt Breakdown voltage below -100 V Passivation by Si₃N₄ will be tested Shivakumar D. Thammaiah

18 Accelerated aging of commercial GaN High Electron Mobility Transistors Reduced thermal conductivity from the GaN transistor to the cooling plate Cracks in the soldering between the elements Electrical conductivity is found to decrease as a consequence of the high operation temperature Sungyoung Song, Stig Munk-Nielsen

19 Summary Very large potentials in Wide Band Gap semiconductors Higher voltages Higher frequencies Compact systems New applications GaN far from fully developed Still lots of materials issues Still room for device developments New types of devices

20 References Power electronics with wide bandgap materials: toward greener more efficient technologies, MRS Bulletin vol. 40 p 390 (2015) DOI: Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices, MRS Bulletin vol. 40 p 399 (2015) DOI: High-voltage normally OFF GaN power transistors on SiC and Si substrates, MRS Bulletin vol. 40 p 418 (2015) DOI: Power GaN Devices, Materials, Applications and Reliability, Springer (2017) (can be downloaded at AAU).

Gallium nitride (GaN)

Gallium nitride (GaN) 80 Technology focus: GaN power electronics Vertical, CMOS and dual-gate approaches to gallium nitride power electronics US research company HRL Laboratories has published a number of papers concerning

More information

International Workshop on Nitride Semiconductors (IWN 2016)

International Workshop on Nitride Semiconductors (IWN 2016) International Workshop on Nitride Semiconductors (IWN 2016) Sheng Jiang The University of Sheffield Introduction The 2016 International Workshop on Nitride Semiconductors (IWN 2016) conference is held

More information

Wide Band-Gap Power Device

Wide Band-Gap Power Device Wide Band-Gap Power Device 1 Contents Revisit silicon power MOSFETs Silicon limitation Silicon solution Wide Band-Gap material Characteristic of SiC Power Device Characteristic of GaN Power Device 2 1

More information

Power Semiconductor Devices - Silicon vs. New Materials. Si Power Devices The Dominant Solution Today

Power Semiconductor Devices - Silicon vs. New Materials. Si Power Devices The Dominant Solution Today Power Semiconductor Devices - Silicon vs. New Materials Jim Plummer Stanford University IEEE Compel Conference July 10, 2017 Market Opportunities for Power Devices Materials Advantages of SiC and GaN vs.

More information

High Frequency GaN-Based Power Conversion Stages

High Frequency GaN-Based Power Conversion Stages PwSoC Cork 2008 High Frequency GaN-Based Power Conversion Stages Dr. Michael A. Briere ACOO Enterprises LLC 1 Anatomy of a power device driven revolution in power electronics Enabling Rapid Commercialization

More information

CHAPTER 2 HEMT DEVICES AND BACKGROUND

CHAPTER 2 HEMT DEVICES AND BACKGROUND CHAPTER 2 HEMT DEVICES AND BACKGROUND 2.1 Overview While the most widespread application of GaN-based devices is in the fabrication of blue and UV LEDs, the fabrication of microwave power devices has attracted

More information

GaN: Applications: Optoelectronics

GaN: Applications: Optoelectronics GaN: Applications: Optoelectronics GaN: Applications: Optoelectronics - The GaN LED industry is >10 billion $ today. - Other optoelectronic applications of GaN include blue lasers and UV emitters and detectors.

More information

GaN power electronics

GaN power electronics GaN power electronics The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation As Published Publisher Lu, Bin, Daniel Piedra, and

More information

From Bulk Gallium Nitride Material to Vertical GaN Devices

From Bulk Gallium Nitride Material to Vertical GaN Devices From Bulk Gallium Nitride Material to Vertical GaN Devices Thomas Mikolajick 1,2, Stefan Schmult 2, Rico Hentschel 1, Patrick Hofmann 1, and Andre Wachowiak 1 1 NaMLab ggmbh 2 Chair of Nanoelectronic Materials,

More information

PERSPECTIVES FOR DISRUPTIVE 200MM/8-INCH GAN POWER DEVICE AND GAN-IC TECHNOLOGY DR. DENIS MARCON SR. BUSINESS DEVELOPMENT MANAGER

PERSPECTIVES FOR DISRUPTIVE 200MM/8-INCH GAN POWER DEVICE AND GAN-IC TECHNOLOGY DR. DENIS MARCON SR. BUSINESS DEVELOPMENT MANAGER PERSPECTIVES FOR DISRUPTIVE 200MM/8-INCH GAN POWER DEVICE AND GAN-IC TECHNOLOGY DR. DENIS MARCON SR. BUSINESS DEVELOPMENT MANAGER What I will show you today 200mm/8-inch GaN-on-Si e-mode/normally-off technology

More information

A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT

A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT by WeiJia Zhang A thesis submitted in conformity with the requirements for the degree of Master of Applied Science Graduate

More information

600V GaN Power Transistor

600V GaN Power Transistor 600V GaN Power Transistor Sample Available Features Normally-Off Current-Collapse-Free Zero Recovery GaN Power Transistor (TO220 Package) ID(Continuous) : 15A RDS(on) : 65m Qg : 11nC Applications Power

More information

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI 1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward

More information

MSE 410/ECE 340: Electrical Properties of Materials Fall 2016 Micron School of Materials Science and Engineering Boise State University

MSE 410/ECE 340: Electrical Properties of Materials Fall 2016 Micron School of Materials Science and Engineering Boise State University MSE 410/ECE 340: Electrical Properties of Materials Fall 2016 Micron School of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures

More information

Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode

Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.16, NO.2, APRIL, 2016 ISSN(Print) 1598-1657 http://dx.doi.org/10.5573/jsts.2016.16.2.221 ISSN(Online) 2233-4866 Normally-Off Operation of AlGaN/GaN

More information

Innovative Technologies for RF & Power Applications

Innovative Technologies for RF & Power Applications Innovative Technologies for RF & Power Applications > Munich > Nov 14, 2017 1 Key Technologies Key Technologies Veeco Market Focus Advanced Packaging, MEMS & RF Lighting, Display & Power Electronics Lithography

More information

Customized probe card for on-wafer testing of AlGaN/GaN power transistors

Customized probe card for on-wafer testing of AlGaN/GaN power transistors Customized probe card for on-wafer testing of AlGaN/GaN power transistors R. Venegas 1, K. Armendariz 2, N. Ronchi 1 1 imec, 2 Celadon Systems Inc. Outline Introduction GaN for power switching applications

More information

Impact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors

Impact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors 11th International MOS-AK Workshop (co-located with the IEDM and CMC Meetings) Silicon Valley, December 5, 2018 Impact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors *, A. Kumar,

More information

Customized probe card for on wafer testing of AlGaN/GaN power transistors

Customized probe card for on wafer testing of AlGaN/GaN power transistors Customized probe card for on wafer testing of AlGaN/GaN power transistors R. Venegas 1, K. Armendariz 2, N. Ronchi 1 1 imec, 2 Celadon Systems Inc. Presented by Bryan Root 2 Outline Introduction GaN for

More information

Chapter 1. Introduction

Chapter 1. Introduction Chapter 1 Introduction 1.1 Introduction of Device Technology Digital wireless communication system has become more and more popular in recent years due to its capability for both voice and data communication.

More information

How GaN-on-Si can help deliver higher efficiencies in power conversion and power management

How GaN-on-Si can help deliver higher efficiencies in power conversion and power management White Paper How GaN-on-Si can help deliver higher efficiencies in power conversion and power management Introducing Infineon's CoolGaN Abstract This paper describes the benefits of gallium nitride on silicon

More information

LSI ON GLASS SUBSTRATES

LSI ON GLASS SUBSTRATES LSI ON GLASS SUBSTRATES OUTLINE Introduction: Why System on Glass? MOSFET Technology Low-Temperature Poly-Si TFT Technology System-on-Glass Technology Issues Conclusion System on Glass CPU SRAM DRAM EEPROM

More information

INTRODUCTION: Basic operating principle of a MOSFET:

INTRODUCTION: Basic operating principle of a MOSFET: INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying

More information

Some Key Researches on SiC Device Technologies and their Predicted Advantages

Some Key Researches on SiC Device Technologies and their Predicted Advantages 18 POWER SEMICONDUCTORS www.mitsubishichips.com Some Key Researches on SiC Device Technologies and their Predicted Advantages SiC has proven to be a good candidate as a material for next generation power

More information

Lecture #29. Moore s Law

Lecture #29. Moore s Law Lecture #29 ANNOUNCEMENTS HW#15 will be for extra credit Quiz #6 (Thursday 5/8) will include MOSFET C-V No late Projects will be accepted after Thursday 5/8 The last Coffee Hour will be held this Thursday

More information

NAME: Last First Signature

NAME: Last First Signature UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT

More information

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s. UNIT-I FIELD EFFECT TRANSISTOR 1. Explain about the Field Effect Transistor and also mention types of FET s. The Field Effect Transistor, or simply FET however, uses the voltage that is applied to their

More information

Fabrication, Corner, Layout, Matching, & etc.

Fabrication, Corner, Layout, Matching, & etc. Advanced Analog Building Blocks Fabrication, Corner, Layout, Matching, & etc. Wei SHEN (KIP) 1 Fabrication Steps for MOS Wei SHEN, Universität Heidelberg 2 Fabrication Steps for MOS Wei SHEN, Universität

More information

A new Vertical JFET Technology for Harsh Radiation Applications

A new Vertical JFET Technology for Harsh Radiation Applications A New Vertical JFET Technology for Harsh Radiation Applications ISPS 2016 1 A new Vertical JFET Technology for Harsh Radiation Applications A Rad-Hard switch for the ATLAS Inner Tracker P. Fernández-Martínez,

More information

III-Nitride microwave switches Grigory Simin

III-Nitride microwave switches Grigory Simin Microwave Microelectronics Laboratory Department of Electrical Engineering, USC Research Focus: - Wide Bandgap Microwave Power Devices and Integrated Circuits - Physics, Simulation, Design and Characterization

More information

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught

More information

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 Lecture 020 ECE4430 Review II (1/5/04) Page 020-1 LECTURE 020 ECE 4430 REVIEW II (READING: GHLM - Chap. 2) Objective The objective of this presentation is: 1.) Identify the prerequisite material as taught

More information

Alternative Channel Materials for MOSFET Scaling Below 10nm

Alternative Channel Materials for MOSFET Scaling Below 10nm Alternative Channel Materials for MOSFET Scaling Below 10nm Doug Barlage Electrical Requirements of Channel Mark Johnson Challenges With Material Synthesis Introduction Outline Challenges with scaling

More information

Wide Band-Gap (SiC and GaN) Devices Characteristics and Applications. Richard McMahon University of Cambridge

Wide Band-Gap (SiC and GaN) Devices Characteristics and Applications. Richard McMahon University of Cambridge Wide Band-Gap (SiC and GaN) Devices Characteristics and Applications Richard McMahon University of Cambridge Wide band-gap power devices SiC : MOSFET JFET Schottky Diodes Unipolar BJT? Bipolar GaN : FET

More information

Alternatives to standard MOSFETs. What problems are we really trying to solve?

Alternatives to standard MOSFETs. What problems are we really trying to solve? Alternatives to standard MOSFETs A number of alternative FET schemes have been proposed, with an eye toward scaling up to the 10 nm node. Modifications to the standard MOSFET include: Silicon-in-insulator

More information

Department of Electrical Engineering IIT Madras

Department of Electrical Engineering IIT Madras Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or

More information

Record I on (0.50 ma/μm at V DD = 0.5 V and I off = 100 na/μm) 25 nm-gate-length ZrO 2 /InAs/InAlAs MOSFETs

Record I on (0.50 ma/μm at V DD = 0.5 V and I off = 100 na/μm) 25 nm-gate-length ZrO 2 /InAs/InAlAs MOSFETs Record I on (0.50 ma/μm at V DD = 0.5 V and I off = 100 na/μm) 25 nm-gate-length ZrO 2 /InAs/InAlAs MOSFETs Sanghoon Lee 1*, V. Chobpattana 2,C.-Y. Huang 1, B. J. Thibeault 1, W. Mitchell 1, S. Stemmer

More information

Y9.FS1.2.1: GaN Low Voltage Power Device Development. Sizhen Wang (Ph.D., EE)

Y9.FS1.2.1: GaN Low Voltage Power Device Development. Sizhen Wang (Ph.D., EE) Y9.FS1.2.1: GaN Low Voltage Power Device Development Faculty: Students: Alex. Q. Huang Sizhen Wang (Ph.D., EE) 1. Project Goals The overall objective of the GaN power device project is to fabricate and

More information

Record Extrinsic Transconductance (2.45 ms/μm at V DS = 0.5 V) InAs/In 0.53 Ga 0.47 As Channel MOSFETs Using MOCVD Source-Drain Regrowth

Record Extrinsic Transconductance (2.45 ms/μm at V DS = 0.5 V) InAs/In 0.53 Ga 0.47 As Channel MOSFETs Using MOCVD Source-Drain Regrowth Record Extrinsic Transconductance (2.45 ms/μm at = 0.5 V) InAs/In 0.53 Ga 7 As Channel MOSFETs Using MOCVD Source-Drain Regrowth Sanghoon Lee 1*, C.-Y. Huang 1, A. D. Carter 1, D. C. Elias 1, J. J. M.

More information

Three Terminal Devices

Three Terminal Devices Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering

More information

Monolithic integration of GaN power transistors integrated with gate drivers

Monolithic integration of GaN power transistors integrated with gate drivers October 3-5, 2016 International Workshop on Power Supply On Chip (PwrSoC 2016) Monolithic integration of GaN power transistors integrated with gate drivers October 4, 2016 Tatsuo Morita Automotive & Industrial

More information

Semiconductor Devices

Semiconductor Devices Semiconductor Devices - 2014 Lecture Course Part of SS Module PY4P03 Dr. P. Stamenov School of Physics and CRANN, Trinity College, Dublin 2, Ireland Hilary Term, TCD 3 th of Feb 14 MOSFET Unmodified Channel

More information

Power Matters Microsemi SiC Products

Power Matters Microsemi SiC Products Microsemi SiC Products James Kerr Director of Marketing Power Discrete Products Microsemi Power Products MOSFETs (100V-1200V) Highest Performance SiC MOSFETs 1200V MOSFETs FREDFETs (MOSFET with fast body

More information

GaN Power Switch & ALL-Switch TM Platform. Application Notes AN01V650

GaN Power Switch & ALL-Switch TM Platform. Application Notes AN01V650 GaN Power Switch & ALL-Switch TM Platform Application Notes AN01V650 Table of Contents 1. Introduction 3 2. VisIC GaN Switch Features 4 2.1 Safe Normally OFF circuit : 5 2.2 D-Mode GaN Transistor: 8 3.

More information

AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors using BN and AlTiO high-k gate insulators

AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors using BN and AlTiO high-k gate insulators AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors using BN and AlTiO high-k gate insulators NGUYEN QUY TUAN Japan Advanced Institute of Science and Technology Doctoral Dissertation

More information

GaN Electrochemical Probes and MEMS on Silicon. Ulrich Heinle, Peter Benkart, Ingo Daumiller, Mike Kunze, Ertugrul Sönmez

GaN Electrochemical Probes and MEMS on Silicon. Ulrich Heinle, Peter Benkart, Ingo Daumiller, Mike Kunze, Ertugrul Sönmez GaN Electrochemical Probes and MEMS on Silicon Ulrich Heinle, Peter Benkart, Ingo Daumiller, Mike Kunze, Ertugrul Sönmez Outline Introduction Electrochemical sensors GaN-on-Silicon MEMS High temperature

More information

Semiconductor Physics and Devices

Semiconductor Physics and Devices Metal-Semiconductor and Semiconductor Heterojunctions The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is one of two major types of transistors. The MOSFET is used in digital circuit, because

More information

Novel SiC Junction Barrier Schottky Diode Structure for Efficiency Improvement of EV Inverter

Novel SiC Junction Barrier Schottky Diode Structure for Efficiency Improvement of EV Inverter EVS28 KINTEX, Korea, May 3-6, 2015 Novel SiC Junction Barrier Schottky iode Structure for Efficiency Improvement of EV Inverter ae Hwan Chun, Jong Seok Lee, Young Kyun Jung, Kyoung Kook Hong, Jung Hee

More information

Sub-micron technology IC fabrication process trends SOI technology. Development of CMOS technology. Technology problems due to scaling

Sub-micron technology IC fabrication process trends SOI technology. Development of CMOS technology. Technology problems due to scaling Goodbye Microelectronics Welcome Nanoelectronics Sub-micron technology IC fabrication process trends SOI technology SiGe Tranzistor in 50nm process Virus The thickness of gate oxide= 1.2 nm!!! Today we

More information

EPE 2005 Dresden ESCAPEE. ESCAPEE Project. SiC Workshop. EPE 2005, September 12

EPE 2005 Dresden ESCAPEE. ESCAPEE Project. SiC Workshop. EPE 2005, September 12 1 EPE 2005 Dresden ESCAPEE 2 The achievements of the EC funded project "Establish Silicon Carbide Applications for Power Electronics in Europe" (ESCAPEE) J. Millan 1, P. Godignon 1, D. Tournier 1, P.A.

More information

N-polar GaN/ AlGaN/ GaN high electron mobility transistors

N-polar GaN/ AlGaN/ GaN high electron mobility transistors JOURNAL OF APPLIED PHYSICS 102, 044501 2007 N-polar GaN/ AlGaN/ GaN high electron mobility transistors Siddharth Rajan a Electrical and Computer Engineering Department, University of California, Santa

More information

Introduction Device Achievements & Needs Future Prospects of SiC Power Devices Conclusion

Introduction Device Achievements & Needs Future Prospects of SiC Power Devices Conclusion Present Present Status Status And And Future Future Prospects of of SiC SiC Power Power Devices Devices Contributors : Gourab Majumdar Chief Engineer, Power Device Works, Mitsubishi Electric Corporation,

More information

What is the highest efficiency Solar Cell?

What is the highest efficiency Solar Cell? What is the highest efficiency Solar Cell? GT CRC Roof-Mounted PV System Largest single PV structure at the time of it s construction for the 1996 Olympic games Produced more than 1 billion watt hrs. of

More information

Chapter 13 Insulated Gate Nitride-Based Field Effect Transistors

Chapter 13 Insulated Gate Nitride-Based Field Effect Transistors Chapter 13 Insulated Gate Nitride-Based Field Effect Transistors M. Shur, G. Simin, S. Rumyantsev, R. Jain and R. Gaska Abstract Polarization doping related to the piezoelectric and spontaneous polarization

More information

Unlocking the Power of GaN PSMA Semiconductor Committee Industry Session

Unlocking the Power of GaN PSMA Semiconductor Committee Industry Session Unlocking the Power of GaN PSMA Semiconductor Committee Industry Session March 24 th 2016 Dan Kinzer, COO/CTO dan.kinzer@navitassemi.com 1 Mobility (cm 2 /Vs) EBR Field (MV/cm) GaN vs. Si WBG GaN material

More information

Simulation Of GaN Based MIS Varactor

Simulation Of GaN Based MIS Varactor University of South Carolina Scholar Commons Theses and Dissertations 2016 Simulation Of GaN Based MIS Varactor Bojidha Babu University of South Carolina Follow this and additional works at: http://scholarcommons.sc.edu/etd

More information

Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs

Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Monika Siddharth Rajan ECE, The Ohio State University Andrew Allerman, Michael

More information

Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs

Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs JOURNAL OF SEMICONUCTOR TECHNOLOGY AN SCIENCE, VOL.16, NO.6, ECEMBER, 216 ISSN(Print) 1598-1657 https://doi.org/1.5573/jsts.216.16.6.867 ISSN(Online) 2233-4866 Effective Channel Mobility of AlGaN/GaN-on-Si

More information

High Voltage Normally-off GaN MOSC- HEMTs on Silicon Substrates for Power Switching Applications

High Voltage Normally-off GaN MOSC- HEMTs on Silicon Substrates for Power Switching Applications High Voltage Normally-off GaN MOSC- HEMTs on Silicon Substrates for Power Switching Applications Zhongda Li, John Waldron, Shinya Takashima, Rohan Dayal, Leila Parsa, Mona Hella, and T. Paul Chow Department

More information

Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1. Topics

Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1. Topics Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1 Topics What is semiconductor Basic semiconductor devices Basics of IC processing CMOS technologies 2006/9/27 2 1 What is Semiconductor

More information

1B John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 ( Copyright 2

1B John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 ( Copyright 2 1A John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 ( Copyright 2009, All Rights Reserved) John D. Cressler, ECE 3450

More information

The Next Generation of Power Conversion Systems Enabled by SiC Power Devices

The Next Generation of Power Conversion Systems Enabled by SiC Power Devices Innovations Embedded The Next Generation of Power Conversion Systems Enabled by SiC Power Devices White Paper The world has benefitted from technology innovations and continued advancements that have contributed

More information

Integrated Circuits: FABRICATION & CHARACTERISTICS - 4. Riju C Issac

Integrated Circuits: FABRICATION & CHARACTERISTICS - 4. Riju C Issac Integrated Circuits: FABRICATION & CHARACTERISTICS - 4 Riju C Issac INTEGRATED RESISTORS Resistor in a monolithic IC is very often obtained by the bulk resistivity of one of the diffused areas. P-type

More information

New Wide Band Gap High-Power Semiconductor Measurement Techniques Accelerate your emerging material device development

New Wide Band Gap High-Power Semiconductor Measurement Techniques Accelerate your emerging material device development New Wide Band Gap High-Power Semiconductor Measurement Techniques Accelerate your emerging material device development Alan Wadsworth Americas Market Development Manager Semiconductor Test Division July

More information

Chapter 3 Basics Semiconductor Devices and Processing

Chapter 3 Basics Semiconductor Devices and Processing Chapter 3 Basics Semiconductor Devices and Processing 1 Objectives Identify at least two semiconductor materials from the periodic table of elements List n-type and p-type dopants Describe a diode and

More information

Gallium Nitride & Related Wide Bandgap Materials and Devices

Gallium Nitride & Related Wide Bandgap Materials and Devices Gallium Nitride & Related Wide Bandgap Materials and Devices Dr. Edgar J. Martinez Program Manager DARPATech 2000 GaAs IC Markets 1999 Market $11 Billion 2005 Market $20 Billion Consumers 2% Computers

More information

Final Report. Contract Number Title of Research Principal Investigator

Final Report. Contract Number Title of Research Principal Investigator Final Report Contract Number Title of Research Principal Investigator Organization N00014-05-1-0135 AIGaN/GaN HEMTs on semi-insulating GaN substrates by MOCVD and MBE Dr Umesh Mishra University of California,

More information

Silicon Photonics Technology Platform To Advance The Development Of Optical Interconnects

Silicon Photonics Technology Platform To Advance The Development Of Optical Interconnects Silicon Photonics Technology Platform To Advance The Development Of Optical Interconnects By Mieke Van Bavel, science editor, imec, Belgium; Joris Van Campenhout, imec, Belgium; Wim Bogaerts, imec s associated

More information

AlGaN/GaN High-Electron-Mobility Transistor Using a Trench Structure for High-Voltage Switching Applications

AlGaN/GaN High-Electron-Mobility Transistor Using a Trench Structure for High-Voltage Switching Applications Applied Physics Research; Vol. 4, No. 4; 212 ISSN 19169639 EISSN 19169647 Published by Canadian Center of Science and Education AlGaN/GaN HighElectronMobility Transistor Using a Trench Structure for HighVoltage

More information

The Quest for High Power Density

The Quest for High Power Density The Quest for High Power Density Welcome to the GaN Era Power Conversion Technology Drivers Key design objectives across all applications: High power density High efficiency High reliability Low cost 2

More information

Wide band gap, (GaN, SiC etc.) device evaluation with the Agilent B1505A Accelerate emerging material device development

Wide band gap, (GaN, SiC etc.) device evaluation with the Agilent B1505A Accelerate emerging material device development Wide band gap, (GaN, SiC etc.) device evaluation with the Agilent B1505A Accelerate emerging material device development Stewart Wilson European Sales Manager Semiconductor Parametric Test Systems Autumn

More information

Quantum Condensed Matter Physics Lecture 16

Quantum Condensed Matter Physics Lecture 16 Quantum Condensed Matter Physics Lecture 16 David Ritchie QCMP Lent/Easter 2018 http://www.sp.phy.cam.ac.uk/drp2/home 16.1 Quantum Condensed Matter Physics 1. Classical and Semi-classical models for electrons

More information

Semiconductor Devices

Semiconductor Devices Semiconductor Devices Modelling and Technology Source Electrons Gate Holes Drain Insulator Nandita DasGupta Amitava DasGupta SEMICONDUCTOR DEVICES Modelling and Technology NANDITA DASGUPTA Professor Department

More information

Design and Analysis of Double Gate MOSFET Devices using High-k Dielectric

Design and Analysis of Double Gate MOSFET Devices using High-k Dielectric International Journal of Electrical Engineering. ISSN 0974-2158 Volume 7, Number 1 (2014), pp. 53-60 International Research Publication House http://www.irphouse.com Design and Analysis of Double Gate

More information

Pitch Pack Microsemi full SiC Power Modules

Pitch Pack Microsemi full SiC Power Modules Pitch Pack Microsemi full SiC Power Modules October 2014 SiC Main Characteristics vs. Si Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy

More information

CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34

CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34 CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials

More information

(a) All-SiC 2-in-1 module

(a) All-SiC 2-in-1 module All-SiC -in- Module CHONABAYASHI, Mikiya * OTOMO, Yoshinori * KARASAWA, Tatsuya * A B S T R A C T Fuji Electric has developed an utilizing a SiC device that has been adopted in the development of a high-performance

More information

STUDY OF III-N HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

STUDY OF III-N HETEROSTRUCTURE FIELD EFFECT TRANSISTORS STUDY OF III-N HETEROSTRUCTURE FIELD EFFECT TRANSISTORS A Thesis Presented to The Academic Faculty by Bravishma Narayan In Partial Fulfillment of the Requirements for the Degree Masters in the School of

More information

GaN MMIC PAs for MMW Applicaitons

GaN MMIC PAs for MMW Applicaitons GaN MMIC PAs for MMW Applicaitons Miroslav Micovic HRL Laboratories LLC, 311 Malibu Canyon Road, Malibu, CA 9265, U. S. A. mmicovic@hrl.com Motivation for High Frequency Power sources 6 GHz 11 GHz Frequency

More information

General look back at MESFET processing. General principles of heterostructure use in FETs

General look back at MESFET processing. General principles of heterostructure use in FETs SMA5111 - Compound Semiconductors Lecture 11 - Heterojunction FETs - General HJFETs, HFETs Last items from Lec. 10 Depletion mode vs enhancement mode logic Complementary FET logic (none exists, or is likely

More information

All-SiC Modules Equipped with SiC Trench Gate MOSFETs

All-SiC Modules Equipped with SiC Trench Gate MOSFETs All-SiC Modules Equipped with SiC Trench Gate MOSFETs NAKAZAWA, Masayoshi * DAICHO, Norihiro * TSUJI, Takashi * A B S T R A C T There are increasing expectations placed on products that utilize SiC modules

More information

ABSTRACT. Gallium Nitride (GaN) is beginning to emerge as an alternative to the Gallium

ABSTRACT. Gallium Nitride (GaN) is beginning to emerge as an alternative to the Gallium ABSTRACT Title of Dissertation: INVESTIGATION OF RELIABILITY IN GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS USING EQUIVALENT CIRCUIT MODELS FOR USE IN HIGH POWER, HIGH FREQUENCY MICROWAVE AMPLIFIERS

More information

2014, IJARCSSE All Rights Reserved Page 1352

2014, IJARCSSE All Rights Reserved Page 1352 Volume 4, Issue 3, March 2014 ISSN: 2277 128X International Journal of Advanced Research in Computer Science and Software Engineering Research Paper Available online at: www.ijarcsse.com Double Gate N-MOSFET

More information

Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device

More information

"Novel High Efficiency Photovoltaic Devices Based on the III-N Material System" January 28, 2005

Novel High Efficiency Photovoltaic Devices Based on the III-N Material System January 28, 2005 e-zi-brtf "Novel High Efficiency Photovoltaic Devices Based on the III-N Material System" January 28, 2005 Introduction The theoretical efficiency limits of solar energy conversion are strongly dependant

More information

4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions

4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions ELECTRONICS 4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions Yu SAITOH*, Toru HIYOSHI, Keiji WADA, Takeyoshi MASUDA, Takashi TSUNO and Yasuki MIKAMURA ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------

More information

Organic Electronics. Information: Information: 0331a/ 0442/

Organic Electronics. Information: Information:  0331a/ 0442/ Organic Electronics (Course Number 300442 ) Spring 2006 Organic Field Effect Transistors Instructor: Dr. Dietmar Knipp Information: Information: http://www.faculty.iubremen.de/course/c30 http://www.faculty.iubremen.de/course/c30

More information

ELECTRONIC DEVICES AND CIRCUITS

ELECTRONIC DEVICES AND CIRCUITS ELECTRONIC DEVICES AND CIRCUITS 1. At room temperature the current in an intrinsic semiconductor is due to A. holes B. electrons C. ions D. holes and electrons 2. Work function is the maximum energy required

More information

GaN Transistors for Efficient Power Conversion

GaN Transistors for Efficient Power Conversion GaN Transistors for Efficient Power Conversion Agenda How GaN works Electrical Characteristics Design Basics Design Examples Summary 2 2 How GaN Works 3 3 The Ideal Power Switch Block Infinite Voltage

More information

The Thermal Integrity of Integrated GaN Power Modules

The Thermal Integrity of Integrated GaN Power Modules The Thermal Integrity of Integrated GaN Power Modules J. Roberts, T. MacElwee, and L. Yushyna GaN Systems Inc. 300 March Rd. #501 Ottawa, ON. K2K 2E2 Phone: (613) 686-1996 Email: jroberts@gansystems.com,

More information

EE70 - Intro. Electronics

EE70 - Intro. Electronics EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π

More information

Future MOSFET Devices using high-k (TiO 2 ) dielectric

Future MOSFET Devices using high-k (TiO 2 ) dielectric Future MOSFET Devices using high-k (TiO 2 ) dielectric Prerna Guru Jambheshwar University, G.J.U.S. & T., Hisar, Haryana, India, prernaa.29@gmail.com Abstract: In this paper, an 80nm NMOS with high-k (TiO

More information

PHYSICS OF SEMICONDUCTOR DEVICES

PHYSICS OF SEMICONDUCTOR DEVICES PHYSICS OF SEMICONDUCTOR DEVICES PHYSICS OF SEMICONDUCTOR DEVICES by J. P. Colinge Department of Electrical and Computer Engineering University of California, Davis C. A. Colinge Department of Electrical

More information

Advantages of Using Gallium Nitride FETs in Satellite Applications

Advantages of Using Gallium Nitride FETs in Satellite Applications White Paper Advantages of Using Gallium Nitride FETs in Satellite Applications Kiran Bernard, Applications Engineer, Industrial Analog & Power Group, Renesas Electronics Corp. February, 2018 Abstract Silicon

More information

How to Design Power Electronics

How to Design Power Electronics How to Design Power Electronics The HF in Power Semiconductor Modeling and Design September 3, 2015 Ingmar Kallfass Institute of Robust Power Semiconductor Systems University of Stuttgart Outline Semiconductor-Based

More information

CMP for More Than Moore

CMP for More Than Moore 2009 Levitronix Conference on CMP Gerfried Zwicker Fraunhofer Institute for Silicon Technology ISIT Itzehoe, Germany gerfried.zwicker@isit.fraunhofer.de Contents Moore s Law and More Than Moore Comparison:

More information

We are right on schedule for this deliverable. 4.1 Introduction:

We are right on schedule for this deliverable. 4.1 Introduction: DELIVERABLE # 4: GaN Devices Faculty: Dipankar Saha, Subhabrata Dhar, Subhananda Chakrabati, J Vasi Researchers & Students: Sreenivas Subramanian, Tarakeshwar C. Patil, A. Mukherjee, A. Ghosh, Prantik

More information

Gallium nitride futures and other stories

Gallium nitride futures and other stories Dr Mike Cooke Gallium nitride-based devices look set to have increasingly wide application, at least if the contributions at December s International Electron Devices Meeting () in Washington DC are anything

More information

GaN HEMT SPICE Model Standard for Power & RF. Samuel Mertens Si2Con San Jose, CA October 6, 2015

GaN HEMT SPICE Model Standard for Power & RF. Samuel Mertens Si2Con San Jose, CA October 6, 2015 GaN HEMT SPICE Model Standard for Power & RF Samuel Mertens Si2Con San Jose, CA October 6, 2015 Compact Model Coalition @SI2 Standardizing Compact Models Since 1996 Started with BSIM3 Support standardization

More information

Design Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness

Design Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness MIT International Journal of Electronics and Communication Engineering, Vol. 4, No. 2, August 2014, pp. 81 85 81 Design Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness Alpana

More information