Physics of Semiconductor Devices

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1 Physics of Semiconductor Devices S. M. SZE Member of the Technical Staff Bell Telephone Laboratories, Incorporated Murray Hill, New Jersey WILEY-INTERSCIENCE A Division of John Wiley & Sons New York London Sydney Toronto

2 Contents Chapter 1 Introduction 1 1. General Outline 1 2. Classification of Semiconductor Devices 3 3. Specific Remarks 5 PART I SEMICONDUCTOR PHYSICS Chapter 2 Physics and Properties of Semiconductors A Resume Introduction Crystal Structure Energy Bands Carrier Concentration at Thermal Equilibrium Carrier Transport Phenomena Phonon Spectra and Optical, Thermal, and High-Field Properties of Semiconductors Basic Equations for Semiconductor Device Operation PART II p-n JUNCTION DEVICES Chapter 3 p-n Junction Diodes Introduction Basic Device Technology 78 xi

xii Contents 3. Depletion Region and Depletion Capacitance 84 4. Current-Voltage Characteristics 96 5. Junction Breakdown 109 6. Transient Behavior and Noise 127 7. Terminal Functions 131 8.

3 xii Contents 3. Depletion Region and Depletion Capacitance Current-Voltage Characteristics Junction Breakdown Transient Behavior and Noise Terminal Functions Heterojunction 140 Chapter 4 Tunnel Diode and Backward Diode Introduction Effects of High Doping Tunneling Processes Excess Current Current-Voltage Characteristics Due to Effects of Doping, Temperature, Electron Bombardment, and Pressure Equivalent Circuit Backward Diode 193 Chapter 5 Impact-Avalanche Transit-Time Diodes (IMPATT Diodes) Introduction Static Characteristics Basic Dynamic Characteristics Generalized Small-Signal Analysis Large-Signal Analysis Noise Experiments 244 Chapter 6 Junction Transistors Introduction Static Characteristics Microwave Transistor Power Transistor Switching Transistor Unijunction Transistor 310 Chapter 7 p-n-p-n and Junction Field-Effect Devices Introduction Shockley Diode and Semiconductor-Controlled Rectifier Junction Field-Effect Transistor and Current Limiter

Contents xiii PART III INTERFACE AND THIN-FILM DEVICES Chapter 8 Metal-Semiconductor Devices 363 1. Introduction 363 2. Schottky Effect 364 3. Energy Band Relation at Metal-Semiconductor Contact.

4 Contents xiii PART III INTERFACE AND THIN-FILM DEVICES Chapter 8 Metal-Semiconductor Devices Introduction Schottky Effect Energy Band Relation at Metal-Semiconductor Contact Current Transport Theory in Schottky Barriers Measurement of Schottky Barrier Height Clamped Transistor, Schottky Gate FET, and Metal-Semicondutor IMPATT Diode Mott Barrier, Point-Contact Rectifier, and Ohmic Contact Space-Charge-Limited Diode 417 Chapter 9 Metal-lnsulator-Semiconductor (MIS) Diodes Introduction Ideal Metal-lnsulator-Semiconductor (MIS) Diode Surface States, Surface Charges, and Space Charges Effects of Metal Work Function, Crystal Orientation, Temperature, Illumination, and Radiation on MIS Characteristics Surface Varactor, Avalanche, Tunneling, and Electroluminescent MIS Diodes Carrier Transport in Insulating Films 492 Chapter 10 IGFET and Related Surface Field Effects Introduction Surface-Space-Charge Region Under Nonequilibrium Condition Channel Conductance Basic Device Characteristics General Characteristics IGFET with Schottky Barrier Contacts for Source and Drain IGFET with a Floating Gate A Memory Device Surface Field Effects on p-n Junctions and Metal- Semiconductor Devices 555 Chapter 11 Thin-Film Devices Introduction Insulated-Gate Thin-Film Transistors (TFT) 568

xiv Contents 3. Hot-Electron Transistors 587 4. Metal-Insulator-Metal Structure 614 PART IV OPTOELECTRONIC DEVICES Chapter 12 Optoelectronic Devices 625 1. Introduction 625 2.

5 xiv Contents 3. Hot-Electron Transistors Metal-Insulator-Metal Structure 614 PART IV OPTOELECTRONIC DEVICES Chapter 12 Optoelectronic Devices Introduction Electroluminescent Devices Solar Cell Photodetectors 653 Chapter 13 Semiconductor Lasers Introduction Semiconductor Laser Physics Junction Lasers Heterostructure and Continuous Room-Temperature Operation Other Pumping Methods and Laser Materials 725 PART V BULK-EFFECT DEVICES Chapter 14 Bulk-Effect Devices Introduction Bulk Differential Negative Resistance Ridley-Watkins-Hilsum (RWH) Mechanism Gunn Oscillator and Various Modes of Operation Associated Bulk-Effect Devices 778 Author Index 789 Subject Index 799

CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34

CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34 CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials