Thin film PV Technologies III- V PV Technology

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1 Thin film PV Technologies III- V PV Technology Week 5.1 Arno Smets

2 ` (Source: NASA)

3 III V PV Technology

4 Semiconductor Materials III- V semiconductors: GaAs: GaP: InP: InAs: GaInAs: GaInP: AlGaInAs: AlGaInP:

5 Atomic Structure Silicon GaAs La9ce constant La9ce constant La9ce constant: Atom density: Density: nm cm gcm - 3 La9ce constant: Atom density: Density: nm cm gcm - 3

6 Energy X- valley Γ- valley L- valley T = 300K E g = 1.42 ev E L = 1.71 ev E X = 1.90 ev E 90 = 0.34 ev E x E g <100> <111> E L Heavy holes Wave vector

7 AbsorpDon coefficient AbsorpUon coefficient, α (cm - 1 ) Wavelength, λ (nm) GaAs InP Germanium Silicon

8 Charge Carrier RecombinaDon RadiaUve Auger SRH

9 Spectral Mismatch 100 Other losses Percentage of incident light energy RelaxaUon to band edges Usable electric power Bandgap (ev) Below- bandgap photons

10 MulDjuncDon C C V Excess energy V Excess energy

11 III- V Technologies Top cell window/emitter AR Contact= n+-gaas n-allnp n-galnp Top cell base/bsf n-galnp Wide-Eg tunnel junction Middle cell window/emitter p-algalnp p++-tunnel junc. n++-tunnel junc. Middle Cell Window n-gaas Middle cell base/bsf p-gaas Courtesy: Richard King Spectro Labs TC & MC crystal quality: Nucleation, buffer, Interface control, Lattice-matching p-galnp p++-tunnel junc. n++-tunnel junc. buffer nucleation n-ge p-ge substrate contact

12 III- V Technologies Top cell window/emitter AR Contact= n+-gaas n-allnp n-galnp Top cell base/bsf n-galnp Wide-Eg tunnel junction Middle cell window/emitter p-algalnp p++-tunnel junc. n++-tunnel junc. Middle Cell Window n-gaas Middle cell base/bsf p-gaas Courtesy: Richard King Spectro Labs TC & MC crystal quality: Nucleation, buffer, Interface control, Lattice-matching p-galnp p++-tunnel junc. n++-tunnel junc. buffer nucleation n-ge p-ge substrate contact

13 III- V Technologies Top cell window/emitter AR Contact= n+-gaas n-allnp n-galnp Top cell base/bsf n-galnp Wide-Eg tunnel junction Middle cell window/emitter p-algalnp p++-tunnel junc. n++-tunnel junc. Middle Cell Window n-gaas Middle cell base/bsf p-gaas Courtesy: Richard King Spectro Labs TC & MC crystal quality: Nucleation, buffer, Interface control, Lattice-matching p-galnp p++-tunnel junc. n++-tunnel junc. buffer nucleation n-ge p-ge substrate contact

14 MulD- juncdon approach Single juncuons 15 Window side 3 J (ma/cm 2 ) ??? Voltage (V)

15 MulD- juncdon approach Single juncuons 15 Window side 3 J (ma/cm 2 ) Voltage (V)

16 MulD- juncdon approach 15 Single juncuons 30 MulU- juncuons J (ma/cm 2 ) J (ma/cm 2 ) ? Voltage (V) Voltage (V) 0

17 Equivalent circuit - ideal solar cell I I PH I D + V OC,1 _

18 Series or parallel? I I I D + I D + I PH V OC,1 _ I PH J SC,1 _ I I I D + I D + I PH V OC,2 _ I PH J SC,2 _ I I I D + I D + I PH V OC,3 _ I PH J SC,3 _ V OC,1 + V OC,2 + V OC,3 J SC,1 + J SC,2 + J SC,3

19 Series or parallel? I I I D + I D + I PH V OC,1 _ I PH J SC,1 _ I I I D + I D + I PH V OC,2 _ I PH J SC,2 _ I I I D + I D + I PH V OC,3 _ I PH J SC,3 _ V OC,1 + V OC,2 + V OC,3 J SC,1 + J SC,2 + J SC,3

20 MulD- juncdon approach 15 Single juncuons 30 MulU- juncuons J (ma/cm 2 ) J (ma/cm 2 ) ? Voltage (V) Voltage (V) 0

21 MulD- juncdon approach 15 Single juncuons 30 MulU- juncuons J (ma/cm 2 ) J (ma/cm 2 ) Voltage (V) Voltage (V)

22 Triple JuncDon n p n p n p

23 n p n p n p

24 = =

25 Triple JuncDon n p n p n p

26 Source: hkp:// Epitaxy of III-V Materials Crystalline growth induced by a crystalline substrate

27 Epitaxy of III-V Materials

28 Epitaxy of III-V Materials Source: hkp://

29 Bandgap vs. LaNce constant GaN ZnS MgSe Bandgap (ev) ZnSc AlP CdS GaP AlAs ZnFe BP BAs GaAs CdSe InP AlSb Si InN Ge GaSb InAs CdTe InSb La9ce Constant (Å)

30 Crystal mismatch: interface defects E.F E.F. Schubert Light- Emi>ng Diodes (Cambridge Univ. Press)

31 Bandgap vs. LaNce constant GaN ZnS MgSe Bandgap (ev) BP BAs InN AlP GaP Si ZnSc CdS ZnFe AlAs GaAs Ge InP CdSe AlSb CdTe GaSb InSb InAs La9ce Constant (Å)

32 Spectrolab AM 0 condidons J SC = ma/cm 2 V OC = V FF = 0.85

33 EQE spectrum of muldjuncdon cells MH Tsutagawa et al. 34th IEEE PVSC pp (2009)

34 EQE spectrum of 4- juncdon cells hkp:// and- media/press- releases/ presseinformauonen- 2013/43.6- four- juncuon- solar- cell- under- concentrated- sunlight

35 LaNce Matched and Metamorphic 3- JuncDon Contact Cell Cross- SecDon AR GaIP top cell AR Contact n+-gaas n-allnp n-galnp n-galnp n+-gaas n-allnp n-galnp n-galnp p-algalnp BSF p++-tunnel junc. n++-tunnel junc. n-ga(in)p window Wide-bandgap tunnel junction p-algalnp BSF p++-tunnel junc. n++-tunnel junc. n-ga(in)as emitter n-ga(in)p window p-ga(in)as base Ge(In)As middle cell n-ga(in)as emitter p-ga(in)as base p-galnp BSF Tunnel junction p-galnp BSF p++-tunnel junc. n++-tunnel junc. p++-tunnel junc. n++-tunnel junc. Buffer region N-Ga(In)As buffer N-Ga(In)As buffer Ge bottom cell nucleation n-ge p-ge substrate contact nucleation n-ge p-ge substrate contact Courtesy: Richard King Spectro Labs

36 III V PV Technology

37 Thank you for your a\endon!

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