IRF7328PbF. HEXFET Power MOSFET V DSS R DS(on) max I D
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1 lÿÿtrench Technology lÿÿultra Low On-Resistance lÿ Dual P-Channel MOSFET lÿavailable in Tape & Reel lÿ Lead-Free PD A IRF7328PbF HEXFET Power MOSFET V DSS R DS(on) max I D -30V 2mΩ@V GS = -V -8.0A 32mΩ@V GS = -4.5V -6.8A Description New trench HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. S G S2 G Top View D D D2 D2 SO-8 Absolute Maximum Ratings Parameter Max. Units V DS Drain-Source Voltage -30 V I T A = 25 C Continuous Drain Current, V -V -8.0 I T A = 70 C Continuous Drain Current, V -V -6.4 A I DM Pulsed Drain Current -32 P A = 25 C Maximum Power Dissipationƒ 2.0 W P A = 70 C Maximum Power Dissipationƒ.3 W Linear Derating Factor 6 mw/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambient ƒ 62.5 C/W 2/03/
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -30 V V GS = 0V, I D = -250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = -ma R DS(on) Static Drain-to-Source On-Resistance 7 2 V GS = -V, I D = -8.0A mω V GS = -4.5V, I D = -6.8A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = -250µA g fs Forward Transconductance 2 S V DS = -V, I D = -8.0A I DSS Drain-to-Source Leakage Current -5 V DS = -24V, V GS = 0V µa -25 V DS = -24V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -0 V GS = -20V na Gate-to-Source Reverse Leakage 0 V GS = 20V Q g Total Gate Charge I D = -8.0A Q gs Gate-to-Source Charge 9.8 nc V DS = -5V Q gd Gate-to-Drain ("Miller") Charge 8.3 V GS = -V t d(on) Turn-On Delay Time 3 20 V DD = -5V, V GS = -.0V t r Rise Time 5 23 I D = -.0A ns t d(off) Turn-Off Delay Time R G = 6.0Ω t f Fall Time R D = 5Ω C iss Input Capacitance 2675 V GS = 0V C oss Output Capacitance 409 pf V DS = -25V C rss Reverse Transfer Capacitance 262 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.0 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G -32 (Body Diode) p-n junction diode. V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -2.0A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = -2.0A Q rr Reverse Recovery Charge nc di/dt = -0A/µs D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. ƒ Surface mounted on FR-4 board, t sec. 2
3 -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) IRF7328PbF 0 VGS TOP -.0V -5.0V -4.5V -4.0V -3.5V -3.3V -3.0V BOTTOM -2.7V 0 VGS TOP -.0V -5.0V -4.5V -4.0V -3.5V -3.3V -3.0V BOTTOM -2.7V -2.7V -2.7V 0. 20µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 0. 20µs PULSE WIDTH Tj = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) 0 T J = 50 C T J = 25 C V DS= -5V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = -8.0A V GS = -V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) 4000 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd 3000 C iss C oss C rss 0 0 -V DS, Drain-to-Source Voltage (V) -V GS, Gate-to-Source Voltage (V) I D = -8A V DS=-24V V DS=-5V Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS= 0 V V SD,Source-to-Drain Voltage (V) -I I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) 0us ms TC = 25 C TJ = 50 C ms Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 .0 V DS R D -I D, Drain Current (A) R G V GS V GS Pulse Width µs Duty Factor 0. % D.U.T. Fig a. Switching Time Test Circuit + - V DD TC A, Case Temperature( C) V GS t d(on) t r t d(off) t f % Fig 9. Maximum Drain Current Vs. Case Temperature 90% V DS Fig b. Switching Time Waveforms 00 Thermal Response (Z thja ) 0 D = t 0.0 t2 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J =P DM x Z thja + TA t, Rectangular Pulse Duration (sec) PDM Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5
6 R DS(on), Drain-to -Source On Resistance ( R DS ( on ), Drain-to-Source On Resistance ( IRF7328PbF Ω) Ω ) I D = -8.0A VGS = -4.5V VGS = -V V GS, Gate -to -Source Voltage (V) I D, Drain Current ( A ) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF V D.U.T. Q GS Q GD V GS V + DS - V G Charge Fig 4a. Basic Gate Charge Waveform -3mA I G I D Current Sampling Resistors Fig 4b. Gate Charge Test Circuit 6
7 SO-8 Package Outline Dimensions are shown in milimeters (inches) A E 6 6X D e B H 0.25 [.0] A INCHES DIM MIN MAX A A b MILLIMETERS MIN MAX c D E e.050 BASIC.27 BASIC e.025 BASIC BASIC H K L y e A C θ y K x 45 8X b A 0.25 [.0] C A B 0. [.004] 8X L 7 8X c NOT ES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-02AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.5 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.0]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A S UB S T RAT E [.255] 3X.27 [.050] FOOTPRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7 (MOSFET ) INTERNATIONAL RECTIFIER LOGO XXXX F7 DATE CODE (YWW) P = DESIGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE PART NUMBER 7
8 SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.2/20 8
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More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
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Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
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l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
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l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET Lead-Free escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
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查询 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 P- 94243 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S 2 3 8 7 6 A V SS = -30V G 4 5 R S(on) = 0.020Ω
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PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
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l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
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HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain
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Benefits l Ultra-Low Gate Impedance SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
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Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Surface Mount Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fuy Avaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier utiize
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